Abstract: A two-way ball valve (10) for liquid and/or gas flowing media, essentially comprises a valve fitting (12) made up of two connected housing parts (22, 28), in which a ball (18) with a drilling (20) for the media flow and an operating shaft (68) running perpendicular to the drilling (20) is mounted such as to be able to rotate. Furthermore, sealing shells (40, 42) are arranged to both sides of the ball (18) respectively, coaxial to the longitudinal axis (L) of the valve fitting (12), which enclose the ball (18) and completely fill the dead volume (38) between the valve fitting (12) and the ball (18). Said sealing half-shells (40, 42) have a front opening for the operating shaft (38) in the axial direction (L), corresponding to the cross section of the drilling (20) in the ball (18). The sealing half-shells (40, 42) only contact the ball (18) in the region of the front openings thereof, between which a narrow sickle-shaped annular gap is formed.

Abstract: Filling valve (5) including: a hollow housing (11) having a valve seat (25); a moving valve rod (14) slidingly mounted in the housing (11) and having a sealing surface (23), the moving valve rod (14) and the hollow housing. (11) together defining a liquid chamber (18); a liquid inlet (26) for putting the liquid chamber (18) into communication with a liquid supply pipe (6); a device for putting the valve rod (14) in a first, full-open position, in which the sealing surface (23) is spaced from the valve seat (25), thereby forming a passage (27) for the liquid; a device for putting the valve rod (14) in a second, closed position, in which the sealing surface (23) is in sealing contact with the valve seat (25), thereby closing the passage (27), and a device for putting the valve rod (14) in a third, predetermined, semi-open position in which the sealing surface (23) is spaced from the valve seat (25) but closer to the same than in the full-open position.

Abstract: A valve is provided for controlling the flow of fluid through a valve block. The valve block has a fluid inlet port, a fluid outlet port, and a receiving bore for receiving the valve. The receiving bore hydraulically connects the fluid inlet and outlet ports, and has a central axis. The valve comprises a valve seat for placement between the fluid inlet and outlet ports, wherein the valve seat comprises a central axis which coincides with the central axis of the receiving bore, and wherein the valve seat further comprises an upper end overmolded by a valve seat attachment end of a plastic valve housing. The valve also includes a tube which comprises a central axis which coincides with the central axis of the receiving bore, wherein the tube further comprises a lower end overmolded by a tube attachment end of the valve housing.

Abstract: This invention provides a valve for a flowable material. The valve has a body defining a bore defined therein. An opening is defined in the side of the bore for material to flow from the bore. The valve also has an actuatable member which is movable along the bore to control the extent of an uncovered area of the opening defined in the bore to control the flow of material through the opening.

Abstract: The present invention relates to a foamed polypropylene composition comprising a propylene homo- and/or copolymer and glass fibres, wherein (i) the composition has a density of 50 to 950 kg/m3, (ii) the tensile modulus tm(extrusion direction) measured according to ISO 527 in extrusion direction and the k-value measured according to ASTM C-518 satisfy the relation: tm(extrusion direction) [MPa]/k [W/mK]?9000 MPa·mK/W, to the use of said composition for the production of an insulating layer and to an article comprising said composition.

Abstract: The present invention relates to a separation medium with various functionalities suitable for, for example, isolation of proteins, cells, and viruses and also for diagnostic applications and cell cultivation. The separation medium comprises magnetic metal particles, preferably coated with an inert synthetic polymer, and pre-functionalised beads. These particles and beads are provided encapsulated in a hydrophilic porous polymer, preferably agarose. The beads may be used for cell cultivation or for chromatography. When the beads are used for chromatography the agarose layer may be provided with ligands having affinity for selected biomolecules.

Abstract: Disclosed herein are 1,1,1,2,2,3,3,4,4-nonafluoro-4-methoxybutane refrigerant or heat transfer fluid compositions further comprising and a fluoroether compound, which are useful in refrigeration or air conditioning apparatus or as heat transfer fluids. The compositions of the present invention are also useful in centrifugal compressor apparatus that employ two-stage compressors or single slab/single pass heat exchangers.

Abstract: Disclosed herein are 3,3,4,4,5,5,6,6,6-nonafluoro-1-hexene compositions for use in refrigeration and air conditioning systems, particularly in centrifugal compressor systems. Also disclosed are 3,3,4,4,5,5,6,6,6-nonafluoro-1-hexene in combination with fluoroethers, which are azeotropic or near azeotropic.

Abstract: The present invention relates to an aqueous antifreeze composition comprising 10 to 50% by weight of one or more dicarboxylic acids, preferably aliphatic dicarboxylic acids having 4 to 12 carbon atoms in the form of the alkali metal, ammonium or alkaline earth metal salt. Preferably, these salts are used in combination with at least one further substance. This gives antifreeze compositions with a good frost protective action, good heat conductivity and good protection against corrosion.

Abstract: An improved composition and method for cleaning the surface of a semiconductor wafer are provided. The composition can be used to selectively remove a low-k dielectric material such as silicon dioxide, a photoresist layer overlying a low-k dielectric layer, or both layers from the surface of a wafer. The composition is formulated according to the invention to provide a desired removal rate of the low-k dielectric and/or photoresist from the surface of the wafer. By varying the fluorine ion component, and the amounts of the fluorine ion component and acid, component, and controlling the pH, a composition can be formulated in order to achieve a desired low-k dielectric removal rate that ranges from slow and controlled at about 50 to about 1000 angstroms per minute, to a relatively rapid removal of low-k dielectric material at greater than about 1000 angstroms per minute.

Abstract: Disclosed is a fluorescent substance comprising an alkaline earth ortho-silicate, the fluorescent substance being activated by Eu2+, and further comprising at least one selected from the group consisting of La, Gd, Cs and K.

Abstract: A method for producing at least one product stream containing hydrogen from a feedstock containing glycerol and a device for performing the method is disclosed. By separation of unwanted substances and pyrolysis of glycerol, an intermediate product is obtained from the feedstock containing glycerol and is then converted into a crude synthesis gas containing hydrogen and carbon monoxide by steam reforming in an externally heated steam reforming reactor.

Abstract: A transparent conductor including a conductive layer coated on a substrate is described. More specifically, the conductive layer comprises a network of nanowires which may be embedded in a matrix. The conductive layer is optically transparent and flexible. It can be coated or laminated onto a variety of substrates, including flexible and rigid substrates.

Abstract: The present invention relates to electrically conductive polymer compositions, and their use in electronic devices. The compositions are an aqueous dispersion including: (1) at least one electrically conductive polymer doped with a non-fluorinated polymeric acid; (2) at least one highly-fluorinated acid polymer; (3) at least one high-boiling polar organic solvent, and (4) an additive which can be one or more of fullerenes, carbon nanotubes, or combinations thereof.

Abstract: Provided are a group 13 nitride phosphor having high luminous intensity and excellent reliability obtained by preparing group 13 nitride crystallites homogeneously dispersible in a solid matrix by capping surface defects and homogeneously dispersing the group 13 nitride crystallites in the solid matrix and an efficient method of preparing the same. The present invention relates to a group 13 nitride phosphor consisting of group 13 nitride crystallites having a group 13 element dispersed in a matrix of a silica gel solid layer, with a diamine compound bonded to the surfaces of the group 13 nitride crystallites and the silica gel solid layer, and a method of preparing the same.

Abstract: The present invention relates to the field of opto-electronic technology and is intended to create transparent conductive layers. More concretely, the invention relates to the field of production of ceramic materials and is intended for using in manufacturing the ceramic targets, which serve as a source of material for magnetron, electron-beam, ion-beam and other films application methods in micro-, opto-, nanoelectronics, as well as to films produced from such a ceramic target and to a method for preparing such films. Disclosed is a ceramic target on the basis of zinc oxide doped with gallium containing from 0.5 to 6 atomic % of gallium and from 0.1 to 2 atomic % of boron, a portion of gallium and boron being contained in zinc oxide crystallites as a substitution admixture, and the rest portion of gallium and boron being contained together with zinc in the amorphous intergranular phase.

Abstract: An electrical device having therein a dielectric fluid composition, wherein the dielectric fluid composition includes at least one refined, bleached and deodorized vegetable oil and at least one antioxidant, wherein the dielectric fluid composition has a pour point of less than about ?20° C. as measured according to either of ASTM D97 or ASTM D5950.

Abstract: Disclosed are highly efficient multiphoton absorbing compounds and methods of their use. The compounds generally include a bridge of pi-conjugated bonds connecting electron donating groups or electron accepting groups. The bridge may be substituted with a variety of substituents as well. Solubility, lipophilicity, absorption maxima and other characteristics of the compounds may be tailored by changing the electron donating groups or electron accepting groups, the substituents attached to or the length of the pi-conjugated bridge. Numerous photophysical and photochemical methods are enabled by converting these compounds to electronically excited states upon simultaneous absorption of at least two photons of radiation. The compounds have large two-photon or higher-order absorptivities such that upon absorption, one or more Lewis acidic species, Lewis basic species, radical species or ionic species are formed.

Abstract: The subject matter of the present invention is marked inorganic additives, a method for their production and also their use.

Abstract: A vehicle safety parapet comprises a plurality of rails (18, 24, 28) supported at varying heights on uprights (12). A first of the rails comprises a steel box-section supported at each upright by bracketing means (20) configured to collapse when a horizontal impact load is applied to the rail, such that the first rail is displaced towards the upright. At least one other rail extends from the uprights by a greater distance than the first rail when the bracketing means has collapsed.

Abstract: A road safety barrier comprising a series of posts rigidly mounted on or in the ground, an anchor body (9) fixed in or on the ground beyond the series of posts, and at least one rope (1-4) which is supported by the posts so as to extend along the series of posts and which has an end portion (8) extending downwards from the last post (6a) of the series towards the anchor body (9). A terminal (19) is fixed on the extremity (8a) of the end portion (8) of the rope. An elongate tie bar 21 has a first end part connected to the anchor body (9) and a second end part releasably connected to the terminal (19) so that the elongate tie bar is in line with the terminal and the end portion (8) of the rope. The tie bar (21) reduces the risk of damage to the terminal (19) in the event of vehicular impact, and is easily replaceable. It also facilitates disengagement of the rope from the anchor body (9) if a vehicle becomes trapped by the end portion (8) of the rope during a collision.

Abstract: This invention relates to guardrails and guardrail impact heads for use in roading networks or vehicle road lanes requiring separation by a barrier. The invention provides an impact head for a guardrail including cable routing means adapted to form a convoluted path through which a cable can be threaded. The convoluted path that the cables must follow through the impact head of the invention restricts movement of the cable through the head, thereby providing sufficient friction to slow down the movement of the impact head during a vehicle impact. The invention also provides a method of constructing a guardrail including the steps of slidably interconnecting a plurality of rails and attaching them to posts, positioning an impact head according to any one of the preceding claims at one end of the slidably interconnected rails, threading at least one cable through the impact head and anchoring the cable to the ground.

Abstract: A fence system for quickly establishing an outfield fence and possibly a back stop for a ball game uses a series of bases with a post receivable within each base. A section of tarp extends between adjacent posts such that clips are attached to each corner of the tarp and two clips at an end of the tarp are attached to a post. The clips are received within slots at the top and bottom of each post with the top capped to prevent clip discharge. Bulbous ends of the clip prevent lateral discharge of the clip from the slot. Alternately, a single section of tarp is removably attachable to each end post via cooperating hook and loop material with the tarp passing through slots on interior posts. An end brace may be used to stabilize end posts of the fence as well as to act as a visual aid for determining what constitutes a foul ball.

Abstract: The security of an ordinary fence can be improved by using intersecting inserts that extend between posts of the fence. The inserts can be inserted in channels that are formed by the woven wire of the fence fabric. Intersections of the inserts can be used to securely couple two intersecting inserts to each other by any suitable means such as welding, bolting, riveting, gluing, and the like. The inserts can be securely coupled to the posts either directly (for example, by using a bracket attached to a post) and/or indirectly by using, for example, a tensioning rod that is coupled to a post. The inserts can also be securely coupled to a support rail that spans the distance between two posts.

Abstract: A railing assembly and method of forming same having a hand rail, shoe rail, and a plurality of spaced, parallel balusters secured at their respective upper and lower ends to resilient straps received and fixed in plows formed in the hand rail and shoe rail. The respective upper and lower ends of each baluster are arcuately shaped allowing the balusters to be moved to any angular orientation with respect to the rails while maintaining the balusters parallel to each other with the ends of the balusters being in contact with the straps.

Abstract: A phase-change memory element. The phase-change memory comprises first and second electrodes. A phase-change material layer is formed between the first and second electrodes. And a carbon-doped oxide dielectric layer is formed to surround the phase-change material layer, wherein the first electrode electrically connects the second electrodes via the phase-change material layer.

Abstract: A semiconductor memory device includes first conductive lines on a substrate, an interlayer insulating layer with a plurality of via holes on the substrate, second conductive lines on the interlayer insulating layer, and a resistive memory material in the via holes and electrically connected to the first and second conductive lines, the resistive memory material having a vertically non-uniform specific resistance profile with respect to the substrate.

Abstract: A phase-change memory element for reducing heat loss is disclosed. The phase-change memory element comprises a composite layer, wherein the composite layer comprises a dielectric material and a low thermal conductivity material. A via hole is formed within the composite layer. A phase-change material occupies at least one portion of the via hole. The composite layer comprises alternating layers or a mixture of the dielectric material and the low thermal conductivity material.

Abstract: A variable resistance memory element and method of forming the same. The memory element includes a substrate supporting a bottom electrode having a small bottom contact area. A variable resistance material is formed over the bottom electrodes such that the variable resistance material has a surface that is in electrical communication with the bottom electrode and a top electrode is formed over the variable resistance material. The small bottom electrode contact area reduces the reset current requirement which in turn reduces the write transistor size for each bit.

Abstract: A semiconductor device is provided with silicon pillars arranged in a matrix and formed substantially perpendicularly to a main surface of a substrate, bit lines provided above the silicon pillars, gate electrodes covering a side surface of each silicon pillars via gate insulation films, first and second diffusion layers provided at an upper part and a lower part of the silicon pillar, respectively, a reference potential wiring provided in common to the plural silicon pillars for supplying a reference potential to the first diffusion layers, and memory elements connected between the second diffusion layers and the bit lines. The gate electrodes covering the silicon pillars adjacent in a first direction crossing the bit line are in contact with each other, and gate electrodes covering the silicon pillars adjacent in a second direction parallel with the bit line are isolated from each other.

Abstract: Provided are a phase-change nonvolatile memory device and a manufacturing method thereof. The device includes: a substrate; and a stack structure disposed on the substrate and including a phase-change material layer. The phase-change material layer is formed of an alloy of antimony (Sb) and zinc (Zn), so that the phase-change memory device can stably operate at high speed and reduce power consumption.

Abstract: A strained semiconductor heterostructure (10) comprises an injection region comprising a first emitter layer (11) having p-type conductivity and a second emitter layer (12) having n-type conductivity, and a light generation layer (13) positioned between the first emitter layer (11) and the second emitter layer (12). An electron capture region (14) is positioned between the light generation layer (13) and the second emitter layer (12), said electron capture region comprising a capture layer (16) adjacent to the second emitter layer, and a confining layer (15) adjacent to said electron capture layer. According to the present invention, the widths and materials of the confining and capture layers (15, 16) are selected to provide energy difference between one of localized energy levels for electrons in the capture layer (16) and the conduction band bottom of the second emitter layer (12) equal to the energy of the optical phonon.

Abstract: A Si substrate 1, a metal adhesion layer 2, a reflective metal film 3 comprising a multilayer of metallic material having a light reflectivity, a SiO2 film 4, an ohmic contact portion 5 provided at a predetermined position of the SiO2 film 4, a GaP layer 6 including a Mg-doped GaP layer 6A and a Zn-doped GaP layer 6B, a p-type GaInP interposed layer 7, a p-type AlGaInP cladding layer 8, an undoped MQW active layer 9, an n-type AlGaInP cladding layer 10, an n-type AlGaInP window layer 11, an n-type GaAs contact layer 12, a first electrode 13, and a second electrode 14 are formed. The ohmic contact portion 5 is distant from the light emitting part including the p-type AlGaInP cladding layer 8, the undoped MQW active layer 9 and the n-type AlGaInP cladding layer 10 by not less than 300 nm.

Abstract: LED packaged structures and applications thereof are disclosed, characterized in that: an active layer in the LED or the LED packaged structure is formed on a first semiconductor conductive layer with multi-quantum wells; and a second semiconductor conductive layer is formed on the active layer; wherein a plurality of particles formed by at least one hetero-material are scattered between the first semiconductor conductive layer and the active layer in order to form an uneven multi-quantum well.

Abstract: Example embodiments are directed to a method of growing GaN single crystals on a silicon substrate, a method of manufacturing a GaN-based light emitting device using the silicon substrate, and a GaN-based light emitting device. The method of growing the GaN single crystals may include forming a buffer layer including a TiN group material or other like material on a silicon substrate, forming a nano-pattern including silicon oxide on the buffer layer, and growing GaN single crystals on the buffer layer and the nano-pattern.

Abstract: A semiconductor light emitting device includes a substrate and a quantum well active layer. The quantum well active layer has a plurality of barrier layers made of GaN-based semiconductor and a well layer made of GaN-based semiconductor sandwiched between the barrier layers and has polarized charge between the barrier layer and the well layer caused by piezo polarization. The well layer has a composition modulation so that a band gap is minimum at an interface between the well layer and one of the barrier layers more far from the substrate than the other.

Abstract: A gallium-nitride-based semiconductor stacked structure includes a sapphire substrate; a low temperature-deposited buffer layer which is composed of a Group III nitride material of AlxGayN (0.5<Y?1, X+Y=1) containing gallium (Ga) in a predominant amount with respect to aluminum (Al), which has been grown at low temperature and which is provided in a junction area thereof joined to a (0001) plane (c-plane) of the sapphire substrate with a single crystal in an as-grown state; and a gallium-nitride (GaN)-based semiconductor layer formed on the low-temperature-deposited buffer layer. The low-temperature-deposited buffer layer is predominantly composed of an as-grown single crystal which has a [1.0.-1.0.] orientation parallel to a [2.-1.1.0.] direction of a lattice forming a (0001) basal plane of the sapphire substrate.

Abstract: A semiconductor device includes a semiconductor substrate having at least one gap, extending under a portion of the semiconductor substrate. A gate stack is on the semiconductor substrate. A strain layer is formed in at least a portion of the at least one gap. The strain layer is formed only under at least one of a source region and a drain region of the semiconductor device.

Abstract: A field effect transistor device comprising: a source electrode; a drain electrode; a semiconductive region comprising an organic semiconductor material and defining a channel of the device between the source electrode and the drain electrode; a first gate structure comprising a first gate electrode and a first dielectric region located between the first gate electrode and the semiconductive region; and a second gate structure comprising a second gate electrode and a second dielectric region located between the second gate electrode and the semiconductive region; whereby the conductance of the semiconductor region in the channel can be influenced by potentials applied separately or to both the first gate electrode and the second gate electrode.

Abstract: A thin film transistor comprises a layer of organic semiconductor material comprising an organic semiconductor material that comprises an aryl dicarboxylic acid diimidazole-based compound. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating ac thin film transistor device, preferably by sublimation or solution-phase deposition onto a substrate, wherein the substrate temperature is no more than 150° C.

Abstract: A thin film transistor comprises a layer of organic semiconductor material comprising an organic semiconductor material that comprises fused-fluorene-containing materials. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating a thin film transistor device, preferably by sublimation or solution-phase deposition onto a substrate, wherein the substrate temperature is no more than 150° C.

Abstract: Example embodiments relate to an organic semiconductor polymer, in which fused thiophenes having liquid crystal properties and aromatic compounds having N-type semiconductor properties are alternately included in the main chain of the polymer, an organic active layer, an organic thin film transistor (OTFT), and an electronic device including the same, and methods of preparing the organic semiconductor polymer, and fabricating the organic active layer, the OTFT and the electronic device using the same. This organic semiconductor polymer has improved organic solvent solubility, processability, and thin film properties, and may impart increased charge mobility and decreased off-state leakage current when applied to the channel layer of the organic thin film transistor.

Abstract: An organic insulator composition including a crosslinking agent and a hydroxyl group-containing oligomer or hydroxyl group-containing polymer is provided. A dielectric film and an organic thin film transistor (OTFT) using an organic insulator composition are also provided. A dielectric film may include a compound having hydroxyl group-containing oligomers or hydroxyl group-containing polymers linked by crosslinking using a crosslinking agent having at least two vinyl ether groups. An organic thin film transistor may include a gate electrode on a substrate, a gate insulating layer on the gate electrode, source and drain electrodes on the gate insulating layer and an organic semiconductor layer contacting the gate insulating layer, wherein the gate insulating layer includes an dielectric film as described above.

Abstract: Methods of forming transparent zinc-tin oxide structures are described. Devices that include transparent zinc-tin oxide structures as at least one of a channel layer in a transistor or a transparent film disposed over an electrical device that is at a substrate.

Abstract: A ZnO-based thin film transistor (TFT) is provided herein, as is a method of manufacturing the TFT. The ZnO-based TFT has a channel layer that comprises ZnO and ZnCl, wherein the ZnCl has a higher bonding energy than ZnO with respect to plasma. The ZnCl is formed through the entire channel layer, and specifically is formed in a region near THE surface of the channel layer. Since the ZnCl is strong enough not to be decomposed when exposed to plasma etching gas, an increase in the carrier concentration can be prevented. The distribution of ZnCl in the channel layer, may result from the inclusion of chlorine (Cl) in the plasma gas during the patterning of the channel layer.

Abstract: An integrated circuit comprises a doped semiconductor portion including an amorphous portion and a contact structure comprising a conductive material. The contact structure is in contact with the amorphous portion. According to another embodiment, an integrated circuit comprises a doped semiconductor portion including a region having a non-stoichiometric composition and a contact structure comprising a conductive material. The contact structure is in contact with the region having a non-stoichiometric composition.

Abstract: The present invention provides a thin film transistor comprising: a substrate (110); a gate electrode (124) formed on the substrate; a gate insulating layer (140) covering the substrate and the gate electrode; a source electrode and a drain electrode (173, 175) formed on the gate insulating layer; a semiconductor layer (150) formed on the gate insulating layer, the source electrode and the drain electrode; and a passivation layer (180) covering the semiconductor layer, the source electrode, the drain electrode and the gate insulating layer, wherein at least one of the gate insulating layer and the passivation layer is made of Parylene.

Abstract: An electrochromic display is disclosed which comprises an array-side substrate (10) wherein a TFT (14) and a pixel electrode (15) connected with the TFT (14) are formed, a color filter-side substrate (50) wherein a counter electrode (53) is formed, and an electrolyte layer (80) injected between the array-side substrate (10) and the color filter-side substrate (50). In this electrochromic display, the TFT (14) is formed to have an area not less than 30% of the area of the pixel, thereby supplying a larger current. Consequently, oxidation-reduction reaction in the electrochromic phenomenon proceeds at a higher rate, thereby enabling a high-speed response.

Abstract: To reduce variation among TFTs in manufacture of a semiconductor device including n-type thin film transistors and p-type thin film transistors. Further, another object of the present invention is to reduce the number of masks and manufacturing steps, and manufacturing time. A method of manufacturing a semiconductor device includes forming an island-shaped semiconductor layer of a first thin film transistor, then, forming an island-shaped semiconductor layer of the second thin film transistor. In the formation of the island-shaped semiconductor layer of the second thin film transistor, a gate insulating film in contact with the island-shaped semiconductor layer of the second thin film transistor is used as a protection film (an etching stopper film) for the island-shaped semiconductor layer of the first thin film transistor.

Abstract: Disclosed are a light emitting display and a method for fabricating the same. The light emitting display includes a substrate. A thin film transistor is formed on a first region of the substrate, and includes a semiconductor layer, a gate electrode, and source/drain electrodes. An organic light emitting diode is electrically coupled to the thin film transistor and includes a first electrode, an emission layer, and a second electrode. A dummy pixel, formed in s second region of the substrate, includes at least one dummy pattern. The dummy pattern is formed of the same material as that of one of the semiconductor layer, the gate electrode, the source/drain electrodes, and the first electrode.