Abstract: To provide a p-type semiconductor material having a band matching with a hole injection layer and suitable for an anode electrode that can be formed on a glass substrate or a polymer substrate, and to provide a semiconductor device. In the p-type semiconductor material, 1×1018 to 5×1020 cm?3 of Ag is contained in a compound containing Zn and Se, and the semiconductor device includes a substrate and a p-type electrode layer arranged on this substrate and having the aforementioned p-type semiconductor material.

Abstract: The organic light-emitting device of the present invention includes: a substrate; a plurality of organic light-emitting elements formed on the substrate; and an element isolation layer formed between the plurality of organic light-emitting elements, each of the elements having: on the substrate in mentioned order, a first electrode patterned for each of the organic light-emitting elements, an organic compound layer patterned for each of the organic light-emitting elements, and a second electrode; the element isolation layer formed across a space between the plurality of first electrodes to cover the ends of the first electrodes, and having an opening at a portion corresponding to the organic light-emitting elements, and at least a portion of the clement isolation layer in contact with the organic compound layer is formed of an inorganic material.

Abstract: A method for selective growth of organic molecules on a substrate is proposed. The method comprises: creating a pattern of nucleation sites for the organic molecules on the substrate; depositing of organic molecules at the nucleation sites by vapor deposition. An organic material based device obtained by performing the method is also proposed. The method offers an alternative to methods that are known the fields of coating technology or semiconductor fabrication.

Abstract: An organic EL display device includes a pixel electrode which is disposed in each of first to third organic EL elements, a first light emission layer which includes a first dopant material having a first absorbance peak, the first light emission layer extending over the first to third organic EL elements and being disposed above the pixel electrode, a second light emission layer which includes a second dopant material having a second absorbance peak and is disposed above the first light emission layer, a third light emission layer which is disposed above the second light emission layer, a counter-electrode which is disposed above the third light emission layer, and a hole transport layer which is formed of a material having an absorbance bottom on a shorter wavelength side than the first absorbance peak and the second absorbance peak in absorbance spectrum characteristics of the hole transport layer.

Abstract: In an organic electroluminescent element of the present invention, which has at least a hole transport layer having an inorganic compound and an organic luminescent layer between a first electrode and a second electrode on a substrate, a high light extraction efficiency can be obtained by reflecting light emitted from the organic luminescent layer off the hole transport layer.

Abstract: The OLED display device includes a first stack and a second stack that are separated from each other between an anode electrode and a cathode electrode, with a charge generation layer sandwiched between the first stack and the second stack, each of the first stack and the second stack having an emission layer. The first stack includes a blue emission layer formed between the anode electrode and the CGL. The second stack includes a fluorescent green emission layer and a phosphorescent red emission layer formed between the cathode electrode and the CGL. The blue emission layer includes one of a fluorescent blue emission layer and a phosphorescent blue emission layer.

Abstract: The object is to fabricate a novel organic semiconductor element which can effectively utilize the main-chain conduction of a conjugated high molecular compound having semiconductor-like properties. Provided is an electronic element which contains, as components, a pair of electrodes which is formed on a substrate, a mesoporous film in which tubular mesopores, which are orientation controlled in one direction, are formed, the mesoporous film being formed between the electrodes so as to be in contact with the electrodes, a conjugated high molecular compound held in the tubular mesopores, and a third electrode which is electrically insulated from the conjugated high molecular compound and is in contact with the mesoporous film.

Abstract: A transistor comprises an active layer of an oxide containing at least one element selected from In, Ga and Zn. The active layer is formed such that a desorption gas monitored as a water molecule by a temperature programmed desorption analysis is 1.4/nm3 or less.

Abstract: One exemplary embodiment includes a semiconductor device. The semiconductor device can include a channel including one or more of a metal oxide including zinc-germanium, zinc-lead, cadmium-germanium, cadmium-tin, cadmium-lead.

Abstract: As the transfer between a processor LSI and a memory has been increasing year by year, there is a demand for increasing the traffic amount and reducing the power required for communication. With this being the condition, a method of stacking LSIs thereby reducing the communication distance is being contemplated. However, the inventors have found that the reduction of cost in the stacking process and the increase in the degree of freedom of selecting the memory LSI to be stacked are required for a simple stacking of processor LSIs and memory LSIs as so far practiced. An external communication LSI including a circuit for performing the communication with the outside of the stacked LSI at a high rate of more than 1 GHz; a processor LSI including a general purpose CPU etc.; and a memory LSI including a DRAM etc. are stacked in this order and those LSIs are connected with one another with a through silicon via to enable a high speed and high volume communication at a shortest path.

Abstract: A tamper-resistant semiconductor device (5;20;30;40;50;60) which includes a plurality of electronic circuits formed on a circuitry side (6) of a substrate (7) having an opposite side which is a backside (8) of the semiconductor device, and comprises at least one light-emitting device (9a-f;21) and at least one light-sensing device (10a-f;22a-b) provided on the circuitry side (6) of the semiconductor device. The light-emitting device (9a-f;21) is arranged to emit light, including a wavelength range for which the substrate (7) is transparent, into the substrate towards the backside (8), and the light-sensing device (10a-f;22a-b) is arranged to sense at least a fraction of the emitted light following passage through the substrate (7) and reflection at the backside (8), and configured to output a signal indicative of a reflecting state of the backside, thereby enabling detection of an attempt to tamper with the backside (8) of the semiconductor device (5;20;30;40;50;60).

Abstract: A photoelectric conversion element includes a light receiving layer that is formed of microcrystal semiconductor, a first semiconductor layer of a first conductive type that is formed on one face side of the light receiving layer, and a first intermediate layer that is interposed between the first semiconductor layer and the light receiving layer and is formed of amorphous semiconductor.

Abstract: An image sensor and a method of fabricating an image sensor. An image sensor may include a readout circuitry arranged over a semiconductor substrate, an interlayer dielectric film provided with metal lines arranged over a semiconductor substrate, and/or a lower electrode arranged over a interlayer dielectric film such that a lower electrode may be connected to metal lines. An image sensor may include a first-type conductive layer pattern arranged over a lower electrode, an intrinsic layer arranged over a surface of a semiconductor substrate such that an intrinsic layer may substantially cover a first-type conductive layer pattern. An image sensor may include a second-type conductive layer arranged over an intrinsic layer. A method of fabricating an image sensor may include a patterned n-type amorphous silicon layer which may be treated with N2O plasma. A method of fabricating an image sensor may include H2 annealing.

Abstract: The present invention provides a method for making a thin film semiconductor device having a bottom-gate, bottom-contact-type thin film transistor structure finer in size with satisfactory characteristics, in which the interface between a gate insulating film and a thin film semiconductor layer can be maintained at satisfactory conditions without being affected by formation of source/drain electrodes. A first gate insulating film (7-1) covering a gate electrode (5) on a substrate (3) is formed, and a pair of source/drain electrodes (9) is formed on the first gate insulating film (7-1). Subsequently, a second gate insulating film (7-2) is selectively formed only on the first gate insulating film (7-2) exposed from the source/drain electrodes (9). Next, a thin film semiconductor layer (11) continuously covering from the source/drain electrodes (9) to the first gate insulating film (7-1) through the second gate insulating film (7-2) is formed while making contact with the source/drain electrodes (9).

Abstract: A fabrication process for a device such as a backplane for a flat panel display includes depositing thin film layers on a substrate, forming a 3D template overlying the thin film layers, and etching the 3D template and the thin film layers to form gate lines and transistors from the thin film layers. An insulating or passivation layer can then be deposited on the gate lines and the transistors, so that column or data lines can be formed on the insulating layer.

Abstract: In a display substrate and a method of the display substrate, a bank pattern provided with openings formed therethrough is formed by an imprint method, and the openings are filled with a conductive material by an inkjet method to form a data line and a pixel electrode, in accordance with one or more embodiments. When the display substrate is manufactured, a patterning process by a photolithography method may be replaced with the patterning process by the imprint method and the inkjet method, which simplifies a manufacturing method of the display substrate. In case that the display substrate includes a plastic substrate, the plastic substrate may be prevented from being deformed during a photolithography process.

Abstract: A layered structure comprises a variable wettability layer including a material that changes a critical surface tension in response to energy provided thereto, the wettability changing layer including at least a high surface energy part of large critical surface tension and a low surface energy part of low critical surface tension, a conductive layer formed on the variable wettability layer at the high surface energy tension part, and a semiconductor layer formed on the variable wettability layer at the low surface energy part.

Abstract: In view of the problem that a reduced thickness of an EL film causes a short circuit between an anode and a cathode and malfunction of a transistor, the invention provides a display device that has a light emitting element including an electrode and an electroluminescent layer, a wire electrically connected to the electrode of the light emitting element, a transistor provided with an active layer including a source, a drain and a channel forming region, and a power supply line electrically connected to one of the source and the drain of the transistor, wherein the wire is electrically connected to the other of the source and the drain of the transistor, and the width of a part of the electrode in the vicinity of a portion where the electrode is electrically connected to the wire is smaller than that of the electrode in the other portion.

Abstract: In an insulating film pattern, a first pattern part is formed at one surface of the insulating film pattern to form a source electrode, a drain electrode, and a semiconductor layer of the thin film transistor. The first pattern part is recessed in one surface of the insulating film pattern. The insulating film pattern is formed on a substrate through an imprint scheme, and is deposited on a base substrate having a gate electrode and a gate line through a contact print scheme. A source electrode, drain electrode, and semiconductor layer of a thin film transistor are formed through an inkjet print scheme using a first pattern part of the insulating film pattern.

Abstract: An embedded or buried resistive structure may be formed by amorphizing a semiconductor material and subsequently re-crystallizing the same in a polycrystalline state, thereby providing a high degree of compatibility with conventional polycrystalline resistors, such as polysilicon resistors, while avoiding the deposition of a dedicated polycrystalline material. Hence, polycrystalline resistors may be advantageously combined with sophisticated transistor architectures based on non-silicon gate electrode materials, while also providing high performance of the resistors with respect to the parasitic capacitance.

Abstract: A display device including an active area having a plurality of pixels comprises an array substrate including a plurality of display elements disposed at said pixels respectively; a sealing substrate disposed to be opposed to said array substrate; and a seal member disposed between said array substrate and said sealing substrate and encircling said active area; wherein said seal member is made of frit glass, and a resin layer is disposed between said array substrate and said sealing substrate in said active area.

Abstract: In an organic light emitting display, a switching transistor includes an active pattern having a crystal structure grown at an angle of 0°±10° relative to a current flow direction, and a driving transistor includes an active pattern having a crystal structure grown at an angle of 90°±10° relative to a current flow direction. As a result, the driving transistor more precisely controls intensity of supply voltage applied to an organic light emitting layer.

Abstract: A gallium nitride-based epitaxial wafer for a nitride light-emitting device comprises a gallium nitride substrate having a primary surface, a gallium nitride-based semiconductor film provided on the primary surface of the gallium nitride substrate, and, an active layer provided on the gallium nitride-based semiconductor film, the active layer having a quantum well structure. The active layer includes a well layer of a gallium nitride-based semiconductor. The gallium nitride-based semiconductor contains indium as a Group III element. A normal line of the primary surface and a C-axis of the gallium nitride substrate form an off angle with each other. The off angle is distributed on the primary surface, and the off angle monotonically increases on the line that extends from one point to another point through a center point of the primary surface of the gallium nitride substrate.

Abstract: A light emitting element which emits light of a wavelength, includes a substrate which is transparent to the wavelength of emitted light and includes a first surface and a second surface; a semiconductor layer stacked on the first surface; a first electrode which is reflective to the wavelength of emitted light and formed on a surface of the semiconductor layer, wherein electrical resistance of the first electrode in a farthest distance is equal to or smaller than 1?; and a second electrode which is reflective to the wavelength of emitted light and formed on the second surface, wherein electrical resistance of the second electrode in a farthest distance is equal to or smaller than 1?.

Abstract: A semiconductor device includes a semiconductor substrate made of silicon carbide and having a surface, a normal vector for the surface having an off angle with respect to a <0001> direction or a <000-1> direction, a semiconductor layer of a first conductivity type formed on the semiconductor substrate, a first semiconductor region of a second conductivity type formed in a surface region of the semiconductor layer, a source region of a first conductivity type formed in a surface region of the first semiconductor region, a second semiconductor region of a second conductivity type formed in the surface region of the semiconductor layer, contacting the first semiconductor region, and having a bottom surface lower than a bottom surface of the first semiconductor region, wherein at least one end of the bottom surface of the second semiconductor region is perpendicular to an off angle direction.

Abstract: Electronic field effect devices, and methods of manufacture of these electronic field effect devices are disclosed. In particular, there is disclosed an electronic field effect device which has improved electrical properties due to the formation of a highly mobile two-dimensional charge-carrier gas in a simple structure formed from diamond in combination with polar materials.

Abstract: The present invention relates to a diamond electronic device comprising a functional surface formed by a planar surface of a single crystal diamond, the planar surface of the single crystal diamond having an Rq of less than 10 nm and at least one of the following characteristics: (a) the surface has not been mechanically processed since formation by synthesis; (b) the surface is an etched surface; (c) a density of dislocations in the diamond breaking the surface is less than 400 cm?2 measured over an area greater than 0.

Abstract: In a manufacturing flow for adapting the band gap of the semiconductor material with respect to the work function of a metal-containing gate electrode material, a strain-inducing material may be deposited to provide an additional strain component in the channel region. For instance, a layer stack with silicon/carbon, silicon and silicon/germanium may be used for providing the desired threshold voltage for a metal gate while also providing compressive strain in the channel region.

Abstract: A semiconductor device according to one embodiment includes: a first transistor comprising a first gate electrode formed on a semiconductor substrate via a first gate insulating film, a first channel region formed in the semiconductor substrate under the first gate insulating film, and first epitaxial crystal layers formed on both sides of the first channel region in the semiconductor substrate, the first epitaxial crystal layers comprising a first crystal; and a second transistor comprising a second gate electrode formed on the semiconductor substrate via a second gate insulating film, a second channel region formed in the semiconductor substrate under the second gate insulating film, second epitaxial crystal layers formed on both sides of the second channel region in the semiconductor substrate, and third epitaxial crystal layers formed on the second epitaxial crystal layers, the second epitaxial crystal layers comprising a second crystal, the third epitaxial crystal layers comprising the first crystal, the

Abstract: The present invention comprises a first substrate with a die formed on a die metal pad, a first and a second wiring circuits formed on the surfaces of the first substrate. A second substrate has a die opening window for receiving the die, a third wiring circuit is formed on top surface of the second substrate and a fourth wiring circuit on bottom surface of the second substrate. An adhesive material is filled into the gap between back side of the die and top surface of the first substrate and between the side wall of the die and the side wall of the die receiving through hole and the bottom side of the second substrate. During the formation, laser is introduced to cut the backside of the first substrate and an opening hole is formed in the first substrate to expose a part of the backside of the Au or Au/Ag metal layer of chip/die.

Abstract: Disclosed are a light emitting device and a method of fabricating the same. The light emitting device comprises a substrate. A plurality of light emitting cells are disposed on top of the substrate to be spaced apart from one another. Each of the light emitting cells comprises a first upper semiconductor layer, an active layer, and a second lower semiconductor layer. Reflective metal layers are positioned between the substrate and the light emitting cells. The reflective metal layers are prevented from being exposed to the outside.

Abstract: An LED array chip (2), which is one type of a semiconductor light emitting device, includes an array of LEDs (6), a base substrate (4) supporting the array of the LEDs (6), and a phosphor film (48). The array of LEDs (6) is formed by dividing a multilayer epitaxial structure including a light emitting layer into a plurality of portions. The phosphor film (48) covers an upper surface of the array of the LEDs (6) and a part of every side surface of the array of LEDs (6). Here, the part extends from the upper surface to the light emitting layer.

Abstract: The present invention relates to a light emitting device and a method of manufacturing the light emitting device. According to the present invention, the light emitting device comprises a substrate, an N-type semiconductor layer formed on the substrate, and a P-type semiconductor layer formed on the N-type semiconductor layer, wherein a side surface including the N-type or P-type semiconductor layer has a slope of 20 to 80° from a horizontal plane.

Abstract: A light-emitting element includes a semiconductor laminated structure including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type different from the first conductivity type and an active layer sandwiched by the first and second semiconductor layers, a first electrode on one surface side of the semiconductor laminated structure, a conductive reflective layer on an other surface side of the semiconductor laminated structure for reflecting light emitted from the active layer, a contact portion partially formed between the semiconductor laminated structure and the conductive reflective layer and being in ohmic contact with the semiconductor laminated structure, and a second electrode on a part of a surface of the conductive reflective layer on the semiconductor laminated structure without contacting the semiconductor laminated structure for feeding current to the contact portion.

Abstract: An n-type layer of a light-emitting device has a structure in which a first n-type layer, a second n-type layer and a third n-type layer are sequentially laminated in this order on a sapphire substrate, and an n-electrode composed of V/Al is formed on the second n-type layer. The first n-type layer and the second n-type layer are n-GaN, and the third n-type layer is n-InGaN. The n-type impurity concentration of the second n-type layer is higher than that of the first n-type layer and the third n-type layer.

Abstract: A substrate for an LED assembly can have a plurality of cups formed therein. At least one cup can be formed within another cup. The cups can be co-axial with respect to one another, for example. A machined surface of the substrate can enhance reflectivity of the LED assembly. A transparent and/or non-global solder mask can enhance reflectivity of the LED assembly. A transparent ring can enhance reflectivity of the LED assembly. By enhancing reflectivity of the LED assembly, the brightness of the LED assembly can be increased. Brighter LED assemblies can be used in applications such as flashlights, displays, and general illumination.

Abstract: A substrate for an LED assembly can have a plurality of cups formed therein. At least one cup can be formed within another cup. The cups can be co-axial with respect to one another, for example. A machined surface of the substrate can enhance reflectivity of the LED assembly. A transparent and/or non-global solder mask can enhance reflectivity of the LED assembly. A transparent ring can enhance reflectivity of the LED assembly. By enhancing reflectivity of the LED assembly, the brightness of the LED assembly can be increased. Brighter LED assemblies can be used in applications such as flashlights, displays, and general illumination.

Abstract: A substrate for an LED assembly can have a plurality of cups formed therein. At least one cup can be formed within another cup. The cups can be co-axial with respect to one another, for example. A machined surface of the substrate can enhance reflectivity of the LED assembly. A transparent and/or non-global solder mask can enhance reflectivity of the LED assembly. A transparent ring can enhance reflectivity of the LED assembly. By enhancing reflectivity of the LED assembly, the brightness of the LED assembly can be increased. Brighter LED assemblies can be used in applications such as flashlights, displays, and general illumination.

Abstract: LED phosphor deposition for use with LEDs. In an aspect, a method is provided for forming an encapsulation. The method includes determining a geometric shape for the encapsulation, selecting a dam material, applying the dam material to a substrate to form a boundary defining a region having the geometric shape, and filling the region with encapsulation material to form the encapsulation. In another aspect, an LED apparatus is provided that includes at least one LED chip and an encapsulation disposed on the at least one LED chip. The encapsulation is formed by determining a geometric shape for the encapsulation, selecting a dam material, applying the dam material to a substrate to form a boundary defining a region having the geometric shape, and filling the region with encapsulation material to form the encapsulation.

Abstract: One embodiment of the present invention is an organic electroluminescence element having a substrate, a first electrode formed on the substrate, an organic luminescent medium layer which includes an organic luminescent layer and is formed on the first electrode, a second electrode formed on the organic luminescent medium layer and arranged so as to face the first electrode, a first passivation layer formed on the second electrode, an adhesive layer adhered to the substrate and formed so as to cover the first electrode, the organic luminescent medium layer, the second electrode and the first passivation layer, a sealing substrate formed on the adhesive layer and a second passivation layer formed so as to entirely cover the adhesive layer, the sealing substrate and an upper surface of an exposure part of the substrate.

Abstract: An electro-optical device includes a substrate, a data line, and a transistor formed on the substrate and including (i) a semiconductor film having a channel region having a channel length according to one direction, first and second source/drain regions which are formed with the channel region interposed therebetween, and first and second junction regions respectively formed between the first and second source/drain region and the channel region, and (ii) a gate electrode overlapping with the channel region, wherein at least one of the first and second junction regions is formed such that the width thereof is at least partially larger than that of the channel region.

Abstract: The present invention relates to a light-emitting diode (LED).The LED comprises an LED die, one or more metal pads, and a fluorescent layer. The characteristics of the present invention include that the metals pads are left exposed for the convenience of subsequent wiring and packaging processes. In addition, the LED provided by the present invention is a single light-mixing chip, which can be packaged directly without the need of coating fluorescent powders on the packaging glue. Because the fluorescent layer and the packaging glue are not processed simultaneously and are of different materials, the stress problem in the packaged LED can be reduced effectively.

Abstract: Provided is a light emitting device. The light emitting device comprises a body, a light emitting diode on the body, a resistor integrated on the body and configured to sense a temperature of the light emitting diode, and a plurality of metal layers on the body.

Abstract: An LED according to the present invention includes a light-emitting chip emitting light, a chip-mounting portion on which the light-emitting chip is mounted, a light-reflecting layer formed on at least a portion of the chip-mounting portion and a gold plating layer formed on at least a portion of the light-reflecting layer, the gold plating layer having a thickness such that the gold plating layer has a different color from a color of gold. The chip-mounting portion may have various shapes and materials. For example, the chip-mounting portion may be a lead terminal, a slug, a printed circuit board, a ceramic substrate, a CNT substrate, etc.

Abstract: Provided is a light emitting element, a light emitting device including the same, and fabrication methods of the light emitting element and light emitting device. The light emitting device comprises a substrate, a light emitting structure including a first conductive layer of a first conductivity type, a light emitting layer, and a second conductive layer of a second conductivity type which are sequentially stacked, a first electrode which is electrically connected with the first conductive layer; and a second electrode which is electrically connected with the second conductive layer and separated apart from the first electrode, wherein at least a part of the second electrode is connected from a top of the light emitting structure, through a sidewall of the light emitting structure, and to a sidewall of the substrate.

Abstract: A nitride based semiconductor light emitting device is revealed. The light emitting device includes a light emitting epitaxial layer, a P-type electrode and a N-type electrode. The P-type electrode and the N-type electrode are disposed on the light emitting epitaxial layer. The light emitting device features on that the N-type electrode is arranged on the inner side of the P-type electrode. The P-type electrode extends toward the N-type electrode along the edge of the light emitting epitaxial layer and the N-type electrode extends inward along the inner side of the P-type electrode. By means of the electrode pattern with special design, the light emitting area of the light emitting device is increased.

Abstract: Provided is a method for producing a Group III nitride semiconductor light-emitting device including a GaN substrate serving as a growth substrate, which method realizes processing of the GaN substrate to have a membrane structure at high reproducibility. In the production method, a stopper layer of AlGaN having an Al compositional proportion of 20% is formed on the top surface of a GaN substrate; an n-type layer, an active layer, a p-type layer, and a p-electrode are sequentially formed on the stopper layer; and the p-electrode is joined to a support substrate. Subsequently, a mask having a center-opening pattern is formed on the bottom surface of the GaN substrate, and the bottom surface is subjected to PEC etching. The bottom surface is irradiated with light having a wavelength corresponding to an energy higher than the band gap of GaN, but lower than the band gap of AlGaN having an Al compositional proportion of 20%.

Abstract: A semiconductor component in which the active junctions extend perpendicularly to the surface of a semiconductor chip substantially across the entire thickness thereof. The contacts with the regions to be connected are provided by conductive fingers substantially crossing the entire region with which a contact is desired to be established.

Abstract: A trench structure of an insulated gate bipolar transistor (IGBT) is formed as a trench net in a P region and extends into an N? layer. The trench net separates the P region into P wells and floating P layers. The P wells contact an emitter electrode while the floating P layers are not in direct contact with the emitter electrode. A gate formed of conductive material and having a surrounding insulation oxide layer is formed in the trench net. An N+ layer may be formed above each floating P layer under the gate. The floating P layers are isolated from the gate and are also not connected to the emitter electrode.

Abstract: Provided is a circuit device having a configuration in which thermal interference between built-in elements is suppressed and being miniaturized in total size. A hybrid integrated circuit device of the present invention includes: a circuit substrate, a sealing resin and leads. The circuit substrate in its upper surface is incorporated with a hybrid integrated circuit formed of semiconductor elements and the like respectively fixed to heat spreaders. The sealing resin coats the circuit substrate and thus seals the hybrid integrated circuit. The leads each extend to the outside while being fixed to a pad formed of a conductive pattern. In this hybrid integrated circuit device, the semiconductor elements are mounted on the respective heat spreaders at positions offset from each other, and thereby are arranged to be spaced away from each other.