Abstract: Optical imaging systems and methods use early photons in order to generate processed fluorescent light images of fluorescent material on or within a tissue. The early photons are generated in accordance with a pulsed light source and an early-photon light receiver. The processed fluorescent light images tend to have improved resolution and imaging accuracy compared with fluorescent light images generated with photons beyond the early photons portions.

Abstract: An EUV light source device properly compensates the wave front of laser beam which is changed by heat. A wave front compensator and a sensor are provided in an amplification system which amplifies laser beam. The sensor detects and outputs changes in the angle (direction) of laser beam and the curvature of the wave front thereof. A wave front compensation controller outputs a signal to the wave front compensator based on the measurement results from the sensor. The wave front compensator corrects the wave front of the laser beam to a predetermined wave front according to an instruction from the wave front compensation controller.

Abstract: The invention is directed to a method for operating plasma-based short-wavelength radiation sources, particularly EUV radiation sources, having a long lifetime and to an arrangement for generating plasma-based short-wavelength radiation. It is the object of the invention to find a novel possibility for operating plasma-based short-wavelength radiation sources with a long lifetime which permits extensive debris mitigation without the main process of radiation generation being severely impaired through the use of buffer gas and without the need for substantial additional expenditure for generating partial pressure in a spatially narrowly limited manner.

Abstract: An EUV light source apparatus in which contamination or damage of optical elements and other component elements by debris can be suppressed to realize longer lives of them. The EUV light source apparatus is an apparatus for radiating extreme ultraviolet light by generating plasma of a target material within a chamber, and includes: a first laser unit for applying a first laser beam to the target material to generate pre-plasma; a second laser unit for applying a second laser beam to the pre-plasma to generate a main plasma for radiating the extreme ultraviolet light; and a magnetic field generating unit for generating a magnetic field within the chamber to control a state of at least one of the pre-plasma and the main plasma.

Abstract: An EUV light source of the present invention is capable of using a saturable absorber stably and continuously in a high heat load state. A saturable absorber (SA) device is disposed on a laser beam line to absorb feeble light, such as self-excited oscillation light, parasitic oscillation light or return light. SA gas from an SA gas cylinder and buffer gas from a buffer gas cylinder are mixed to be a mixed gas. The mixed gas is supplied to an SA gas cell via a supply pipeline, and absorbs the feeble light included in the laser beam. The mixed gas is exhausted via an exhaust pipeline, and is sent to a heat exchanger. The mixed gas, cooled down by a heat exchanger, is sent back to the SA gas cell by a circulation pump.

Abstract: A fluid overfill probe is resistant to failure caused by physical stresses resulting from thermal expansion of probe components. A fluid level detector is connected to circuit components that are mounted on a circuit board located in a housing of the probe. The circuit board is located within a tube that is positioned within, and secured to the housing, and the circuit board is secured to an inner surface of the tube along its edges. The tube has a shape and rigidity sufficient to maintain a gap between the circuit components and the inner surface of the tube such that thermal expansion of probe components result in no physical stress to the circuit components.

Abstract: A beam irradiation device includes an actuator that scans a target region with laser light in a two-dimensional direction, and a servo optical system that changes a traveling direction of servo light along with driving of the actuator. The servo optical system includes a splitting element that splits the servo light, a first position sensing device that receives a first beam split by the splitting element and outputs a signal at a light-receiving position in a first direction, and a second position sensing device that receives a second beam split by the splitting element and outputs a signal at a light-receiving position in a second direction different from the first direction.

Abstract: A radiation image capturing system is provided. A radiation source control device includes a first timing component, and a control component that, when a time of the first timing component has reached a pre-specified exposure start time, controls a radiation source, which emits radiation, and performs control to cause radiation to be irradiated for a predetermined duration from the radiation source. A radiation image capturing device includes a second timing component that measures time, which is synchronized with the first timing component, a sensor portion that generates charges in accordance with irradiation of radiation and that is irradiated with the radiation from the radiation source, and a generation component that, after a time of the second timing component has passed through the predetermined duration from the exposure start time, reads out the charges generated at the sensor portion and generates image data representing a radiation image.

Abstract: The present invention relates to a valve device (10) comprising a substrate (12) and an elastic membrane (13), the membrane being joined at least around a valve area to the substrate. The substrate comprises a first channel (16) and a second channel (17), both ending in the valve area, the first channel having in the valve area a first channel end surface (19) and the second channel having in the valve area a second channel end surface (21), wherein the area of the first channel end surface is substantially larger than the area of the second channel end surface.

Abstract: Azeotropic or azeotrope-like compositions are disclosed. The azeotropic or azeotrope-like compositions are mixtures of Z-1,1,1,4,4,4-hexafluoro-2-butene with methyl formate, pentane, 2-methylbutane, 1,1,1,3,3-pentafluorobutane, trans-1,2-dichloroethylene, 1,1,1,3,3-pentafluoropropane, dimethoxymethane, or cyclopentane. Also disclosed is a process of preparing a thermoplastic or thermoset foam by using such azeotropic or azeotrope-like compositions as blowing agents. Also disclosed is a process of producing refrigeration by using such azeotropic or azeotrope-like compositions. Also disclosed is a process of using such azeotropic or azeotrope-like compositions as solvents. Also disclosed is a process of producing an aerosol product by using such azeotropic or azeotrope-like compositions. Also disclosed is a process of using such azeotropic or azeotrope-like compositions as heat transfer media.

Abstract: A magnetorheological formulation which comprises at least one base oil, at least one magnetizable particle, a at least one dispersant and a at least one thixotropic agent is described.

Abstract: A novel NiMnZn-based ferrite which can reduce magnetic loss (core loss) at a high frequency of about 2 MHz or higher and achieve higher saturated magnetic flux density while forming high sintered density is provided. The NiMnZn-based ferrite contains a main component comprising 54.0 to 57.5 mol % of iron oxide in terms of Fe2O3, 2.0 to 7.0 mol % of zinc oxide in terms of ZnO, 0.5 to 4.7 mol % of nickel oxide in terms of NiO, and a remainder of manganese oxide (in terms of MnO); and an accessory component comprising 100 to 1000 ppm by weight of Si in terms of SiO2, 800 to 3000 ppm by weight of Ca in terms of CaCO3, and 520 to 1000 ppm by weight of Nb in terms of Nb2O5 with respect to the main component; while having an average ferrite crystal particle size of 2.1 to 8.5 ?m.

Abstract: Disclosed herein is a lubricant composition comprising soybean oil; and molybdenum disulfide; the molybdenum disulfide being dispersed in the soybean oil. Disclosed herein too is a method comprising agitating molybdenum disulfide with soybean oil in a reactor; the mixing being conducted in the presence of a magnetic field that is greater than the earth's field and an electrical field. Disclosed herein too is a coolant composition comprising water; soap and/or a surfactant; and a lubricant composition; the lubricant composition comprising soybean oil and molybdenum disulfide. Disclosed herein too is a method of manufacturing a coolant composition comprising mixing a lubricant composition, water and soap; the lubricant composition comprising a base oil and a metal sulfide.

Abstract: A chelate complex is removed from a chemical which is used in a semiconductor production process and contains a compound having a chelating ability, and the cleaning load is also reduced. Specifically disclosed is a method for purifying a chemical which is used in a semiconductor production process and contains a compound having a chelating ability, wherein a chelate complex which is formed from impurity metals such as nickel and copper contained in an alkaline chemical is removed from the chemical by treating the alkaline chemical with an organic complex adsorbing material.

Abstract: Modifications to the extracellular polymeric substance, predominantly extracellular polysaccharide, of a biopolymer produced by Rhizobium tropici ATCC 49672 yield a stable dry salt transported more easily than a fluid or gel and more stable than either. The salt may be re-constituted with water on-site. Embodiments may be employed as a soil amendment for soil strengthening, reducing hydraulic conductivity, erosion control and dust control as well as a metal chelator for contaminant remediation. Based on comparison with dextran standards, an embodiment demonstrated a molecular weight over 511,000 D. Embodiments include a day salt that is precipitated from solution and in use is re-hydrated back to original form. When added to a sandy soil at 0.1% by dry weight, an embodiment decreased the hydraulic conductivity by three orders of magnitude.

Abstract: An active material capable of forming an electrochemical device excellent in its discharge capacity and rate characteristic is provided. The active material in accordance with a first aspect of the present invention comprises a compound particle containing a compound having a composition represented by the following chemical formula (1), a carbon layer covering the compound particle, and a carbon particle. The active material in accordance with a second aspect of the present invention comprises a carbon particle and a compound particle having an average primary particle size of 0.03 to 1.4 ?m, being carried by the carbon particle, and containing a compound represented by the following chemical formula (1): LiaMXO4??(1) where a satisfies 0.9?a?2, M denotes one species selected from the group consisting of Fe, Mn, Co, Ni, and VO, and X denotes one species selected from the group consisting of P, Si, S, V, and Ti.

Abstract: A composition comprising at least one liquid crystal compound, and at least one polymer is disclosed. The polymer comprises a constitutional unit represented by a following formula (A) and a constitutional unit derived from a monomer having a fluoroaliphatic group(s): wherein Mp represents a trivalent group constituting fully or partially a polymer main chain; L represents a single bond or a divalent linking group; and X represents a substituted or non-substituted aromatic condensed ring group.

Abstract: The invention relates to a liquid crystal composition comprising two or more species of liquid crystal compounds respectively having a polymerizable group, at least one species of which being a compound represented by formula (I) below, having a content of the compound of from 20% to 80% relative to the total mass of said two or more species of liquid crystal compounds.

Abstract: Disclosed are a biaxial liquid crystal compound, a liquid crystal composition comprising the same, and an optical film using the same liquid crystal composition. More particularly, there is provided a liquid crystal material of a viewing angle compensation film with high quality characteristics, which can improve a contrast ratio and minimize variations in color with viewing angles in a black state, a liquid crystal composition comprising the same liquid crystal material, and a compensation film obtained from the same liquid crystal composition.

Abstract: Crystals with improved scintillation and optical properties are achieved by codoping with a trivalent dopant and a divalent and/or a monovalent dopant. Embodiments include codoping LSO, YSO, GSO crystals and LYSO, LGSO, and LYGSO crystals. Embodiments also include codoped crystals with a controlled monovalent or divalent:trivalent dopant ratio of from about 1:1 for increased light yield to about 4:1 for faster decay time.

Abstract: A polyamic acid composition includes a conductive carbon black and a polyamic acid in which a diamine compound, a tetracarboxylic acid dianhydride, and an acid monoanhydride have been reacted at a quantitative ratio satisfying the following Relational Expression (1) and Relational Expression (2). In Relational Expressions (1) and (2), X represents a content by mol of the diamine compound, Y represents a content by mol of the tetracarboxylic acid dianhydride, and Z represents a content by mol of the acid monoanhydride. 0.962?Y/X?0.997??Relational Expression (1) 0.20?Z/2(X?Y)<0.

Abstract: A nanocrystal capable of light emission includes a nanoparticle having photoluminescence having quantum yields of greater than 30%.

Abstract: The present invention provides a conductive polymer composition for radiographic imaging prepared by mixing a photosensitive compound, such as a carbon nanotube, a photodegradable dopant, a photocuririg agent, an organic electron acceptor including a halogen atom, a Lewis basic dopant, and a pseudodopant, with a conductive polymer, the conductive polymer composition for radiographic imaging showing an electrical resistance variation amplified by radiation. When a photosensitive compound is mixed with a conductive polymer in accordance with the present invention, it is possible to effectively amplify the electrical resistance variation of the thus obtained composition by radiation, and thus it is possible to effectively detect and record radiation of low dose. That is, when the amplified electrical resistance variation is processed into an electrical signal, it is possible to facilitate the detection and recording of radiation, i.e.

Abstract: The present invention is related to nano-particle compositions, methods of their preparation and applications thereof. The nano-particle compositions include silicon-containing nano-particles, a graphite matrix, carbon nanotubes and an amorphous carbon interface formed between the silicon-containing nano-particles and the graphite matrix.

Abstract: The present invention is directed to the effective dispersion of carbon nanotubes (CNTs) into polymer matrices. The nanocomposites are prepared using polymer matrices and exhibit a unique combination of properties, most notably, high retention of optical transparency in the visible range (i.e., 400-800 nm), electrical conductivity, and high thermal stability. By appropriate selection of the matrix resin, additional properties such as vacuum ultraviolet radiation resistance, atomic oxygen resistance, high glass transition (Tg) temperatures, and excellent toughness can be attained. The resulting nanocomposites can be used to fabricate or formulate a variety of articles such as coatings on a variety of substrates, films, foams, fibers, threads, adhesives and fiber coated prepreg. The properties of the nanocomposites can be adjusted by selection of the polymer matrix and CNT to fabricate articles that possess high optical transparency and antistatic behavior.

Abstract: Methods and compositions for depositing rare earth metal-containing layers are described herein. In general, the disclosed methods deposit the precursor compounds comprising rare earth-containing compounds using vapor deposition methods such as chemical vapor deposition or atomic layer deposition. In certain embodiments, the disclosed precursor compounds include a cyclopentadienyl ligand having at least one aliphatic group as a substituent.

Abstract: The present invention provides a metal nanowire-containing composition containing at a least metal nanowire and a heterocyclic compound having an interaction potential of less than ?1 mV.

Abstract: In a paste for a solar cell light-receiving surface electrode including silver particles, glass frit, resin binder, and thinner, silver particles with a specific surface of 0.20-0.60 m2/g are used as the silver particles. The silver particles are preferably included at 80 mass % or more to the total amount of silver particles being included in the paste.

Abstract: Nickel nanoparticles including an aqueous solution including a nickel precursor, a surfactant, a hydrophobic solvent, and distilled water, the hydrophobic solvent being one or more compounds selected from the group consisting of hexane, cyclohexane, heptane, octane, isooctane, decane, tetradecane, hexadecane, toluene, xylene, 1-octadecene, and 1-hexadecene; a compound including hydrazine which is added to the aqueous solution to form a nickel-hydrazine complex; and a reducing agent added to the compound including the nickel-hydrazine complex.

Abstract: A method for forming an embedded passive device module comprises depositing a first amount of an alkali silicate material, co-depositing an amount of embedded passive device material with the amount of alkali silicate material; and thermally processing the amount of alkali silicate material and the amount of embedded passive device material at a temperature sufficient to cure the amount of alkali silicate material and the amount of embedded passive device material and form a substantially moisture free substrate.

Abstract: A method for producing a high-quality group-III element nitride crystal at a high crystal growth rate, and a group-III element nitride crystal are provided. The method includes the steps of placing a group-III element, an alkali metal, and a seed crystal of group-III element nitride in a crystal growth vessel, pressurizing and heating the crystal growth vessel in an atmosphere of nitrogen-containing gas, and causing the group-III element and nitrogen to react with each other in a melt of the group-III element, the alkali metal and the nitrogen so that a group-III element nitride crystal is grown using the seed crystal as a nucleus. A hydrocarbon having a boiling point higher than the melting point of the alkali metal is added before the pressurization and heating of the crystal growth vessel.

Abstract: There is provided a non-resonant two-photon absorption recording material including (a) a non-resonant two-photon absorption compound; and (b) a recording component capable of changing at least either one of a refractive index and a fluorescent intensity. The non-resonant two-photon absorption compound (a) is represented by the following formula (1): In the formula (1), both of X and Y represent a substituent having a Hammett sigma para value (?p value) of 0 or more and they may be the same as or different from each other; n represents an integer of 1 to 4; R represents a substituent and each R may be the same as or different from every other R; and m represents an integer of 0 to 4.

Abstract: An actuator comprises a gear arrangement operatively connected to a rotatable input of a linearly extendable actuator device, wherein the gear arrangement comprises a pinion gear and a face gear in meshing engagement with one another.

Abstract: A line retrieval system comprises a retrieval device having a radially magnetized magnet adapted to be magnetically coupled to an object disposed on an opposite side of a structure for drawing the object in a desired direction relative to the structure.

Abstract: A line retrieval system comprises a retrieval device having a radially magnetized magnet adapted to be magnetically coupled to an object disposed on an opposite side of a structure for drawing the object in a desired direction relative to the structure.

Abstract: A line retrieval system comprises a retrieval device having a radially magnetized magnet adapted to be magnetically coupled to an object disposed on an opposite side of a structure for drawing the object in a desired direction relative to the structure.

Abstract: The present invention discloses a hydraulic jack for long-term support. The hydraulic jack for long-term support includes a base, a housing, an oil cylinder, a piston rod, a top cap, a pump body, a pump core, a handle, a press handle, an oil return valve, a press cap and a slit nut. The slit nut surrounds the piston rod and engages with the piston rod via screw threads. The press cap is disposed on upper ends of the slit nut and the top cap and surrounds the piston rod. The present invention can achieve safe and reliable lifting operation.

Abstract: In a fence having a plurality of posts, vertically-spaced rails extend across the posts. Horizontally-spaced union strips are extended across the rails, and sheeted infill material is positioned within the open faces of the union strips, so that the sheeted infill material extends from the first union strip to the second union strip.

Abstract: A railing assembly that, in one embodiment, includes a first rail, a second rail, and a post that are coupled with a rail crossover assembly. The rail crossover assembly may include a first end with a first flange configured to be received in a cavity of the first rail, a second end with a second flange configured to be received in a cavity of the second rail, and a post coupling member configured to be received in a cavity of the post. The first end, the second end and the third end of the rail crossover assembly are oriented so the post is substantially orthogonal with respect to the first rail and the second rail.

Abstract: A semiconductor memory device includes a variable resistance element including a first electrode, a current path forming region, and a second electrode. The current path forming region includes a first region made of a variable resistance material whose resistivity changes by applying voltage, and a second region formed by doping a metal element to the variable resistance material such that a resistivity of the second region is higher than that of the first region and is not changed by applying a voltage used to change the resistivity of the first region. The first region is in contact with the first electrode and the second electrode, and extends from one electrode side to the other electrode side. The second region is provided outside the first region in at least part of the current path forming region in direction extending from one electrode side to the other electrode side.

Abstract: A nonvolatile memory device has a first insulating layer, a variable resistance layer provided on the first insulating layer and having a variable resistance material, and a first electrode and second electrode electrically connected with the variable resistance layer. The variable resistance layer has a variable resistance region as a data storing region and a thickness-changing region continuously extending from the variable resistance region and gradually becoming thicker from the variable resistance region.

Abstract: A memory cell structure and method to form such structure. The method partially comprised of forming a via within an oxidizing layer, over the center of a bottom electrode. The method includes depositing a via spacer along the sidewalls of the via and oxidizing the via spacer. The via spacer being comprised of a material having a Pilling-Bedworth ratio of at least one and one-half and is an insulator when oxidized. The via area is reduced by expansion of the via spacer during the oxidation. Alternatively, the method is partially comprised of forming a via within a first layer, over the center of the bottom electrode. The first layer has a Pilling-Bedworth ratio of at least one and one-half and is an insulator when oxidized. The method also includes oxidizing at least a portion of the sidewalls of the via in the first layer.

Abstract: A method of making a device includes forming at least one anodizable metal layer over at least one of an electrode or a semiconductor device, forming a plurality of pores in the anodizable metal layer by anodization of the anodizable metal layer to expose a portion of the electrode or semiconductor device, and filling at least one pore with a rewritable material such that at least some of the rewritable material is in electrical contact with the electrode or semiconductor device.

Abstract: A resistive memory cell includes a structural layer, a pore in the structural layer, a selector, having a coupling terminal accommodated in the pore, and a storage element of a resistive memory material, arranged in the pore and electrically coupled to the coupling terminal of the selector. The storage element has a tubular portion, extending transversely to an electrical coupling interface of the coupling terminal.

Abstract: Various embodiments of the present invention are generally directed to an apparatus and method associated with a semiconductor device with thermally coupled phase change layers. The semiconductor device comprises a first phase change layer selectively configurable in a relatively low resistance crystalline phase and a relatively high resistance amorphous phase, and a second phase change layer thermally coupled to the first phase change layer. The second phase change layer is characterized as a metal-insulator transition material. A programming pulse is applied to the semiconductor device from a first electrode layer to a second electrode layer to provide the first phase change layer with a selected resistance.

Abstract: A memory cell structure and method for forming the same. The method includes forming a via within a dielectric layer. The via is formed over the center of an electrically conducting bottom electrode. The method includes depositing a stress liner along at least one sidewall of the via. The stress liner imparting stress on material proximate the stress liner. In one embodiment, the stress liner provides a stress in the range of 500 to 5000 MPa on the material enclosed within its volume. The method includes depositing phase change material within the via and the volume enclosed by the stress liner. The method also includes forming an electrically conducting top electrode above the phase change material.

Abstract: A nonvolatile memory device includes: a substrate; a stacked structure member including a plurality of dielectric films and a plurality of electrode films alternately stacked on the substrate and including a through-hole penetrating through the plurality of the dielectric films and the plurality of the electrode films in a stacking direction of the plurality of the dielectric films and the plurality of the electrode films; a semiconductor pillar provided in the through-hole; and a charge storage layer provided between the semiconductor pillar and each of the plurality of the electrode films. At least one of the dielectric films includes a film generating one of a compressive stress and a tensile stress, and at least one of the electrode films includes a film generating the other of the compressive stress and the tensile stress.

Abstract: A method for enhancing operation of a bipolar light-emitting transistor includes the following steps: providing a bipolar light-emitting transistor having emitter, base, and collector regions; providing electrodes for coupling electrical signals with the emitter, base, and collector regions; and adapting the base region to promote carrier transport from the emitter region toward the collector region by providing, in the base region, several spaced apart quantum size regions of different thicknesses, with the thicknesses of the quantum size regions being graded from thickest near the collector to thinnest near the emitter.

Abstract: The invention provides a nanowire light emitting device and a manufacturing method thereof. In the light emitting device, first and second conductivity type clad layers are formed and an active layer is interposed therebetween. At least one of the first and second conductivity type clad layers and the active layer is a semiconductor nanowire layer obtained by preparing a layer of a mixture composed of a semiconductor nanowire and an organic binder and removing the organic binder therefrom.

Abstract: The present application relates to an opto-electronic device. The opto-electronic device includes a first light-emitting structure and a second light-emitting structure. The first light-emitting structure is capable of generating a first light having a first wavelength. The second light-emitting structure is capable of generating a second light having a second wavelength. The first light-emitting structure includes a nanorod structure having a first active layer, and the first active layer can absorb the second light to generate the first light.