Abstract: An organic light emitting display device includes: a first substrate; a plurality of organic light emitting diodes on the first substrate; a plurality of spacers spaced apart from each other on sides of light emitting regions corresponding to the plurality of organic light emitting diodes; and a second substrate facing the first substrate and spaced apart from the first substrate at an interval by the plurality of spacers.

Abstract: There is provided an organic electronic device having an anode, a hole injection layer, a photoactive layer, an electron transport layer, and a cathode. At least one of the photoactive layer and the electron transport layer includes a compound having Formula I where: R1 is the same or different and can be phenyl, biphenyl, naphthyl, naphthylphenyl, triphenylamino, or carbazolylphenyl; and one of the following conditions is met: (i) R2?R3 and is H, phenyl, biphenyl, naphthyl, naphthylphenyl, arylanthracenyl, phenanthryl, triphenylamino, or carbazolylphenyl; or (ii) R2 is H or phenyl; and R3 is phenyl, biphenyl, naphthyl, naphthylphenyl, arylanthracenyl, phenanthryl, triphenylamino, and carbazolylphenyl; When both R1 are phenyl, R2 and R3 can be 2-naphthyl, naphthylphenyl, arylanthracenyl, 9-phenanthryl, triphenylamino, or m-carbazolylphenyl.

Abstract: The present invention relates to buffer bilayers, and their use in electronic devices. The bilayer has a first layer including (i) at least one electrically conductive polymer doped with at least one non-fluorinated polymeric acid and (ii) at least one highly-fluorinated acid polymer. The bilayer has a second layer which is a reacted layer from a metal which can be one or more transition metals, Group 13 metals, Group 14 metals, or lanthanide metals.

Abstract: An organic EL device includes: an anode for injecting holes; a phosphorescent-emitting layer; a fluorescent-emitting layer; and a cathode for injecting electrons. The phosphorescent-emitting layer contains a phosphorescent host and a phosphorescent dopant for phosphorescent emission. The fluorescent-emitting layer contains a fluorescent host and a fluorescent dopant for fluorescent emission. The fluorescent host is at least one of an asymmetric anthracene derivative represented by a formula (1) below and a pyrene derivative represented by a formula (2) below.

Abstract: An object of the present invention is to provide a method for producing an organic semiconductor element allowing depression of electrical properties of active layer to be prevented, moreover allowing an active layer patterned to have a satisfactory pattern shape to be formed. In order to achieve the above object, the method for producing an organic semiconductor element of the present invention has the step of laminating a layered body resulting from lamination of a support film and the active layer to an element substrate on which the active layer will be disposed so that the active layer of the layered body will be in contact with the element substrate, the step of forming a mask having a prescribed pattern shape on the support film's surface located on the side opposite to the active layer, and the step of patterning the active layer by removing the layered body located in a region where the mask has not been formed.

Abstract: An organic photodetector has a reduced dark current by incorporating an electron blocking layer or barrier layer between the lower electrode and the organic photoactive layer. TA SAM layer is proposed as the material for the barrier layer.

Abstract: There is provided a thin film active element including a light-permeable substrate, a light-shielding source/drain electrode formed on the substrate, a light-permeable source/drain electrode formed on a plane surface to which the light-shielding source/drain electrode belongs, and disposed to have a gap interposed between the light-shielding source/drain electrode and the light-permeable source/drain electrode, a channel layer formed in the gap between the light-shielding source/drain electrode and the light-permeable source/drain electrode, and a gate electrode applying an electric field to the channel layer formed in the gap.

Abstract: The present invention relates to the use of halogenated phthalocyanines as charge transport materials and/or as absorber materials.

Abstract: An organic electro-luminescence diode comprises two electrodes and an organic electro-luminescence structure. The organic electro-luminescence structure is formed between the two electrodes, and includes a red light-generating unit, a green light-generating unit, a blue light-generating unit and a light-compensating unit stacked with each other. The light-compensating unit is selected from the group consisting of a white light-compensating unit, a red light-compensating unit, a green light-compensating unit, a blue light-compensating unit and a structure stacking together one light-compensating unit upon the other.

Abstract: The subject of the invention is a substrate that can be used as a substrate for the epitaxial growth of layers based on gallium nitride and comprising a support material (11, 21) coated on at least one of its faces with at least one multilayered stack comprising at least one zinc-oxide-based layer (13, 24). The substrate is coated with a semiconductor structure of III-N or II-VI type, and it is characterized in that placed between the support material (11, 21) and said at least one zinc-oxide-based layer (13, 24) is at least one intermediate layer (12, 23) comprising oxides with at least two elements chosen from tin (Sn), zinc (Zn), indium (In), gallium (Ga) and antimony (Sb).

Abstract: An object is to suppress deterioration in electric characteristics in a transistor including an oxide semiconductor layer or a semiconductor device including the transistor. In a transistor in which a channel layer is formed using an oxide semiconductor, a silicon layer is provided in contact with a surface of the oxide semiconductor layer, an impurity semiconductor layer is provided over the silicon layer, and a source electrode layer and a drain electrode layer are provided to be electrically connected to the impurity semiconductor layer.

Abstract: To suppress deterioration in electrical characteristics in a transistor including an oxide semiconductor layer or a semiconductor device including the transistor. In a transistor in which a channel layer is formed using an oxide semiconductor, a silicon layer is provided in contact with a surface of the oxide semiconductor layer. Further, the silicon layer is provided in contact with at least a region of the oxide semiconductor layer, in which a channel is formed, and a source electrode layer and a drain electrode layer are provided in contact with regions of the oxide semiconductor layer, over which the silicon layer is not provided.

Abstract: The object is to suppress deterioration in electrical characteristics in a semiconductor device comprising a transistor including an oxide semiconductor layer. In a transistor in which a channel layer is formed using an oxide semiconductor, a p-type silicon layer is provided in contact with a surface of the oxide semiconductor layer. Further, the p-type silicon layer is provided in contact with at least a region of the oxide semiconductor layer, in which a channel is formed, and a source electrode layer and a drain electrode layer are provided in contact with regions of the oxide semiconductor layer, over which the p-type silicon layer is not provided.

Abstract: The present invention provides a production method of a semiconductor device and a semiconductor device that permits suppression of a leakage current. A production method of a semiconductor device includes a structure in which a semiconductor layer, an insulating film, and a gate electrode are stacked on a main surface of a substrate in this order, the method comprises an impurity-adding step of: adding impurities to at least a portion of the semiconductor layer, the portion facing the gate electrode, so that a portion of the semiconductor layer, the portion being an edge region and facing the gate electrode, has an impurity concentration greater than an impurity concentration of a portion of the semiconductor layer, the portion being a non-edge region and facing the gate electrode.

Abstract: A substrate supporting thin film transistors thereon, each including a semiconductor layer and source-drain electrodes, wherein the source-drain electrodes are formed from a nitrogen-containing layer or oxygen/nitrogen-containing layer and a thin film of pure copper or copper alloy. The nitrogen-containing layer or oxygen/nitrogen-containing layer has respectively part or all of its nitrogen or part or all of its oxygen or nitrogen connected to silicon in the semiconductor layer of the thin film transistor, and the thin film of pure copper or copper alloy is connected to the semiconductor layer of said thin film transistor through the nitrogen-containing layer or oxygen/nitrogen-containing layer.

Abstract: A thin film transistor array substrate is disclosed. The thin film transistor array substrate includes: gate lines and data lines formed to cross each other in the center of a gate insulation film on a substrate and to define pixel regions; a thin film transistor formed at each intersection of the gate and data lines; a passivation film formed on the thin film transistors; a pixel electrode formed on each of the pixel regions and connected to the thin film transistor through the passivation film; a gate pad connected to each of the gate lines through a gate linker; and a data pad connected to each of the data lines through a data linker. The data pad is formed of a gate pattern, and the data line is formed of a data pattern. The data linker is configured to connect the data pad formed of the gate pattern with the data line formed of the data pattern using a connection wiring.

Abstract: A light emitting device is provided. The light emitting device may include a plurality of light emitting elements formed on a first common electrode, each light emitting element having a first conductive layer formed over the first common electrode. The light emitting device may also include an active layer formed over the first conductive layer, a second conductive layer formed over the active layer, and an insulator formed between adjacent light emitting elements. A plurality of electrodes may be respectively formed on the plurality of light emitting elements, and a second common electrode may couple the plurality electrodes. Such a light emitting structure may improve emission characteristics, heat dissipation and high temperature reliability.

Abstract: A semiconductor epitaxial substrate includes: a single crystal substrate; an AlN layer epitaxially grown on the single crystal substrate; and a nitride semiconductor layer epitaxially grown on the AlN layer, wherein an interface between the AlN layer and nitride semiconductor layer has a larger roughness than an interface between the single crystal substrate and AlN layer, and a skewness of the upper surface of the AlN layer is positive.

Abstract: A semiconductor device according to the present invention includes: a silicon carbide substrate (11) that has a principal surface and a back surface; a semiconductor layer (12), which has been formed on the principal surface of the silicon carbide substrate; and a back surface ohmic electrode layer (1d), which has been formed on the back surface of the silicon carbide substrate. The back surface ohmic electrode layer (1d) includes: a reaction layer (1da), which is located closer to the back surface of the silicon carbide substrate and which includes titanium, silicon and carbon; and a titanium nitride layer (1db), which is located more distant from the back surface of the silicon carbide substrate.

Abstract: A MOSFET driver compatible JFET device is disclosed. The JFET device can include a gate contact, a drain contact, and a source contact. The JFET device can further include a first gate region of semiconductor material adjacent the gate contact and a second region of semiconductor material adjacent the first gate region. The first gate region and the second gate region can form a first p-n junction between the first gate region and the second gate region. The JFET device can further include a channel region of semiconductor material adjacent the source contact. The channel region and the second gate region can form a second p-n junction between the second gate region and the channel region.

Abstract: A light emitting diode (LED) includes a substrate, a temperature detecting pattern, and a semiconductor structure. The temperature detecting pattern is formed on the substrate. Then the semiconductor structure is formed on the temperature detecting pattern and the substrate. The semiconductor structure includes an n-type semiconductor layer, a p-type semiconductor layer, and an active layer. Per above-mentioned structural design, the temperature detecting pattern directly integrated into the LED can measure the actual temperature of PN junction with high precision.

Abstract: Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, a plurality of isolation layers formed along an outer peripheral portion of the light emitting structure below the light emitting structure, a metal layer interposed between the isolation layers, and a second electrode layer formed below the light emitting structure.

Abstract: An exemplary light emitting diode (LED) light source includes a frame and light emitting units. The frame includes a supporting surface having a curved surface and one or more receiving holes configured in the curved surface. Each of the light emitting units is received in a respective receiving hole. Each of the light emitting units includes an LED die for generating light of two polarization states, a reflective polarizer for preferentially reflects one polarization state back into the LED die and preferentially transmitting the other polarization state out of the light emitting unit, a polarization converting film for converting the reflected light of the first polarization state into light of the second polarization state, and a reflective film for reflecting light of the converted second polarization state to the reflective polarizer.

Abstract: An active matrix substrate 40 according to the present invention includes a conductive film 44 and a wiring 80 for supplying a signal to the conductive film 44, characterized in that the wiring 80 includes a first conductive layer 61 and a second conductive layer 62 having a relatively large line width in comparison with the first conductive layer 61 and laminated so as to cover the first conductive layer 61, and the conductive film 44 is arranged in a matrix pattern, and at least a portion of the conductive film 44 is disposed overlapping the wiring 80.

Abstract: A light emitting device includes a carrier, a light emitting element disposed and electrically connected to the carrier, and a transparent plate disposed on the carrier and including a flat-portion and a lens-portion. The lens-portion covers the light emitting element and has a light incident surface, a light emitting surface, a first side surface and a second side surface. The light emitting element is adapted to emit a beam. A first partial beam of the beam passes through the light incident surface and emerges from the light emitting surface. A second partial beam of the beam passes through the light incident surface and is transmitted to the first side surface or the second side surface, and the first side surface or the second side surface reflects at least a part of the second partial beam of the beam which then emerges from the light emitting surface.

Abstract: Disclosed is a light emitting device employing non-stoichiometric tetragonal Alkaline Earth Silicate phosphors. The light emitting device comprises a light emitting diode emitting light of ultraviolet or visible light, and non-stoichiometric luminescent material disposed around the light emitting diode. The luminescent material adsorbs at least a portion of the light emitted from the light emitting diode and emits light having a different wavelength from the absorbed light. The non-stoichiometric luminescent material has tetragonal crystal structure, and contains more silicon in the crystal lattice than that in the crystal lattice of silicate phosphors having stoichiometric crystal structure. The luminescent material is represented as the formula (BauSrvCawCux)3?y(Zn,Mg,Mn)zSi1+bO5+2b:Euu. Light emitting devices having improved temperature and humidity stability can be provided by employing the non-stoichiometric tetragonal Alkaline Earth Silicate phosphors.

Abstract: A semiconductor light emitting device (A) includes an elongated substrate (1) formed with a through-hole (11), a first, a second and a third semiconductor light emitting elements (3R, 3G, 3B) mounted on the main surface of the substrate (1), and an electrode (2R) electrically connected to the first semiconductor light emitting element (3R) and extending to the reverse surface of the substrate (1) via the through-hole (11). The first semiconductor light emitting element (3R) and the through-hole (11) are positioned between the second semiconductor light emitting element (3G) and the third semiconductor light emitting element (3B) in the longitudinal direction of the substrate (1). The second semiconductor light emitting element (3G) is arranged closer to one end of the substrate (1), whereas the third semiconductor light emitting element (3B) is arranged closer to the other end of the substrate (1).

Abstract: An LED lighting device comprises a plurality of light emitting units which is configured to emit visible light having different colors which are mixed with each other to produce a white light. Each the light emitting units is composed of an LED chip and a phosphor. The LED chip is configured to generate light. The phosphor has a property of giving off a light of a predetermined color when the phosphor is excited by the light from the LED chip. The LED chip is selected from a group consisting of a blue LED chip, a UV LED chip, ad a violet LED chip. Each the phosphor is selected to give off the light of a predetermined color different from one another.

Abstract: A light emitting device free from void-generation at a bonding between an LED chip and a metal layer provided on a dielectric substrate. This light emitting device is also free from short-circuit between the closely arranged LED chips. This light emitting device includes a plurality of the LED chips, one dielectric substrate (sub-mount member) which is made of a dielectric substrate for holding the LED chips. The dielectric substrate is formed with a plurality of supporting platforms which respectively holds the LED chips. Each supporting platform is provided with a metal layer which is soldered to the LED chip. The supporting platforms are configured to leave a groove between the adjacent ones of the supporting platforms. Each supporting platform is provided at its side surface with a solder-leading portion made of a material having a solder-wettablity higher than that of the supporting platform.

Abstract: The present invention provides an inexpensive substrate which can realize m-plane growth of a crystal by vapor phase growth. In a sapphire substrate, an off-angle plane slanted from an m-plane by a predetermined very small angle is prepared as a growth surface, which is a template of the crystal, at the time of growing a crystal of GaN or the like, by a polishing process to prepare a stepwise substrate comprising steps and terraces. According to the above-described configuration, even if an inexpensive sapphire substrate, which normally does not form an m-plane (nonpolar plane) GaN film, is used as a substrate for crystal growth, the following advantages can be attained.

Abstract: Provided are a semiconductor device, a semiconductor device manufacturing method, a high carrier mobility transistor and a light emitting device. The semiconductor device is provided with a semiconductor layer including N and Ga, a conductive layer ohmic-connected to the semiconductor layer, a metal-distributed region where metal exists by being distributed at an interface between the semiconductor layer and the conductive layer, and a metal intrusion region where the atoms of the metal exist by entering the semiconductor layer.

Abstract: Group III nitride semiconductor crystals of a size appropriate for semiconductor devices and methods for manufacturing the same, Group III nitride semiconductor devices and methods for manufacturing the same, and light-emitting appliances. A method of manufacturing a Group III nitride semiconductor crystal includes a process of growing at least one Group III nitride semiconductor crystal substrate on a starting substrate, a process of growing at least one Group III nitride semiconductor crystal layer on the Group III nitride semiconductor crystal substrate, and a process of separating a Group III nitride semiconductor crystal, constituted by the Group III nitride semiconductor crystal substrate and the Group III nitride semiconductor crystal layer, from the starting substrate, and is characterized in that the Group III nitride semiconductor crystal is 10 ?m or more but 600 ?m or less in thickness, and is 0.2 mm or more but 50 mm or less in width.

Abstract: The invention relates to photonic materials having regularly arranged cavities containing at least one colorant, where the wall material of the photonic material has dielectric properties and as such is essentially non-absorbent for the wavelength of an absorption band of the respective colorant and is essentially transparent for the wavelength of a colorant emission which can be stimulated by the absorption wavelength, and the cavities are shaped in such a way that radiation having the wavelength of the weak absorption band of the colorant is stored in the photonic material, to the use thereof as phosphor system in an illuminant, to corresponding illuminants and production processes.

Abstract: A method of forming a light emitting diode (LED) module molds an array of lens support frames over an array of connected lead frames. LEDs are bonded to the lead frame contacts within the support frames. Molded lenses are then affixed over each support frame, and the lead frames are diced to create individual LED modules. In another embodiment, the lenses are molded along with the support frames to create unitary pieces, and the support frames are affixed to the lead frames in the array of connected lead frames. In another embodiment, no lenses are used, and cups are molded with the lead frames so that the LED module is formed solely of the unitary lead frame/cup and the LED. Since each LED enclosure is formed of only one or two separate pieces, and the modules are fabricated on an array scale, the modules can be made very small and simply.

Abstract: A light emitting device (LED) is provided. The LED comprises a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer. The active layer is on the first conductivity type semiconductor layer. The second conductivity type semiconductor layer is on at least one side of the active layer and the first conductivity type semiconductor layer, and on the active layer.

Abstract: A light-emitting diode (LED) light source module is described, comprising: a heat conduction substrate, wherein a surface of the heat conduction substrate includes a plurality of recesses; a plurality of light-emitting diode chips respectively disposed in the recesses; an insulation layer disposed on the surface of the heat conduction substrate outside of the recesses; an electric conduction layer disposed on the insulation layer, wherein the light-emitting diode chips are electrically connected to the electric conduction layer; and an encapsulation layer covering the light-emitting diode chips, the electric conduction layer and the insulation layer.

Abstract: A light emitting device includes a carrier, a light emitting element disposed and electrically connected to the carrier, and a transparent plate disposed on the carrier and including a flat-portion and a lens-portion. The lens-portion covers the light emitting element and has a light incident surface, a light emitting surface, a first side surface and a second side surface. The light emitting element is suitable for emitting a light beam. A first partial beam of the light beam passes through the light incident surface and leaves from the light emitting surface. A second partial beam of the light beam passes through the light incident surface and is transmitted to the first side surface or the second side surface, and the first side surface or the second side surface reflects at least a part of the second partial beam of the light beam to be passed through the light emitting surface.

Abstract: A light emitting device package including a package body including a plurality of discrete and separated three-dimensional-shaped indentations formed in an undersurface of the package body and configured to dissipate heat generated in the package body, a cavity in the package body, and a light emitting device including at least one emitting diode in the cavity of the package body and configured to emit light.

Abstract: Light emitting LEDs devices comprised of LED chips that emit light at a first wavelength, and a thin film layer over the LED chip that changes the color of the emitted light. For example, a blue LED chip can be used to produce white light. The thin film layer beneficially consists of a florescent material, such as a phosphor, and/or includes tin. The thin film layer is beneficially deposited using chemical vapor deposition.

Abstract: A light emitting element includes a semiconductor laminated structure including a first semiconductor layer of first conductivity type, a second semiconductor layer of second conductivity type different from the first conductivity type, and an active layer sandwiched between the first semiconductor layer and the second semiconductor layer, a surface electrode including a center electrode disposed on one surface of the semiconductor laminated structure and a thin wire electrode extending from a periphery of the center electrode, and a contact part disposed on a part of another surface of the semiconductor laminated structure extruding a part located directly below the surface electrode, in parallel along the thin wire electrode, and including a plurality of first regions forming the shortest current pathway between the thin wire electrode and a second region allowing the plural first regions to be connected.

Abstract: Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes a first conductive semiconductor layer; an active layer on the first conductive semiconductor layer; and a second conductive semiconductor layer on the active layer, in which a patterned roughness is formed on a top surface of the second conductive semiconductor layer.

Abstract: A radiation-emitting component includes a semiconductor layer stack having an active region that emits electromagnetic radiation, and at least one surface of the semiconductor layer stack or of an optical element that transmits the electromagnetic radiation wherein the surface has a normal vector, wherein on the at least one surface of the semiconductor layer stack or of the optical element through which the electromagnetic radiation passes, an antireflection layer is arranged such that, for a predetermined wavelength, it has a minimum reflection at a viewing angle relative to the normal vector of the surface at which an increase in a zonal luminous flux of the electromagnetic radiation has approximately a maximum.

Abstract: An organic light emitting diode (OLED) including: a substrate; a reflection layer on the substrate and including metal; a first electrode on the reflection layer and including a light transparent aluminum zinc oxide (AZO); an organic layer on the first electrode and including an emitting layer; and a second electrode on the organic layer and including a semi-permeable reflection layer.

Abstract: Exemplary systems and methods for LED light engines include an LED package with electrical leads, each lead forming a compliant portion for making electrical and mechanical connection upon insertion into a receptacle of a circuit substrate. In an illustrative example, the electrical and mechanical connections may be formed upon the insertion of the compliant portion into the receptacle and without further process steps involving solder. Various examples may further include an elongated thermal dissipation member extending from a bottom of a package that contains the LED, where the elongated thermal member (e.g., tab) may be in substantial thermal communication with the LED die. As an example, the tab may provide a substantially reduced thermal impedance for dissipating heat from the LED die. Upon insertion into a circuit substrate, the LED package may be releasable by mechanical extraction without applied heat to facilitate repair or replacement, for example.

Abstract: Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer below the first conductive semiconductor layer, and a second conductive semiconductor layer below the active layer; a channel layer below the light emitting structure, in which an inner portion of the channel layer is disposed along an outer peripheral portion of the light emitting structure and an outer portion of the channel layer extends out of the light emitting structure; and a second electrode layer below the light emitting structure.

Abstract: Disclosed is a light emitting device package. The light emitting device package includes a package body including a cavity formed therein with first and second via holes, a first electrode extending from one side of the cavity to one side of a rear surface of the package body through the first via hole, a second electrode extending from an opposite side of the cavity to an opposite side of the rear surface of the package body through the second via hole, a light emitting device connected with the first and second electrodes, an insulating layer insulating the first and second electrodes from the package body, and a reflective layer disposed on the insulating layer having a structure in which first and second media having different refractive indexes are alternately stacked on each other.

Abstract: A semiconductor light emitting device is provided. The semiconductor light emitting device comprises a plurality of compound semiconductor layers, an electrode layer, a conductive support member and a first buffer member. The compound semiconductor layers comprise a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer. The electrode layer is disposed under the plurality of compound semiconductor layers. The conductive support member is disposed under the electrode layer. The first buffer member is embedded to be spaced apart, in the conductive support member.

Abstract: Provided are a light emitting device package and a lighting system comprising the same. The light emitting device package comprises a package body having a trench, a metal layer within the trench, and a light emitting device over the metal layer.

Abstract: A semiconductor light emitting device including a substrate including a plurality of discrete and separated protruding reflective patterns protruding from the substrate and including a valley; a first semiconductor layer on the substrate and covering the reflective patterns; a gap formed in the valley of a corresponding reflective pattern between the substrate and the first semiconductor layer; an active layer on the first semiconductor layer; and a second semiconductor layer on the active layer.

Abstract: Provided is a light emitting device package. The light emitting device package comprises a first conductive type package body, an insulating layer comprising an opening on the package body, a plurality of compound semiconductor layers disposed on the package body through the opening of the insulating layer, an electrode electrically connected to the plurality of compound semiconductor layers, a first metal layer electrically connected to the package body and disposed on a part of the insulating layer, and a second metal layer electrically connected to the electrode and disposed on the other part of the insulating layer.