Abstract: An organic electroluminescence device includes an organic layer disposed between at least one pair of electrodes, wherein the organic layer includes at least one fluorescent compound selected from compounds represented by the following general formulae (1) and (2): wherein X1 to X16 each independently represents a hydrogen atom, a linear, branched or cyclic alkyl group having 1 to 20 carbon atoms, a linear, branched or cyclic alkoxy group having 1 to 20 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, a substituted or unsubstituted aryloxy group having 6 to 30 carbon groups, a substituted or unsubstituted arylamino group having 6 to 30 carbon atoms, a substituted or unsubstituted alkylamino group having 1 to 30 carbon atoms, a substituted or unsubstituted arylalkylamino group having 7 to 30 carbon atoms or a substituted or unsubstituted alkenyl group having 8 to 30 carbon atoms; a pair of adjacent groups represented by X1 to X2 and a pair of adjacent substituents to g

Abstract: Disclosed is an organic electroluminescent element having an element structure that can reduce damage to an organic layer during electrode formation and can facilitate the injection of charges from the electrode into the organic layer. The organic electroluminescent element includes an anode, a cathode, and an organic layer held between the anode and the cathode. The organic layer contains a luminescent material. The organic electroluminescent element further includes a transparent protective layer provided between the anode or the cathode and the organic layer. The transparent protective layer contains a bipolar charge transport organic compound and an electron-accepting compound. The transparent protective layer is formed in a period between after the formation of the organic layer and before the formation of the anode or the cathode on the organic layer.

Abstract: There are provided a laminate, a preparatory support, a laminate production method and a device production method which make it possible to successfully produce a thin device on a flexible substrate which is likely to bend or break. A laminate 1A includes: a support 2A; a photothermal conversion layer 3A; a light blocking layer 4A; an adhesive layer 5A; a flexible substrate 6A; and a device element 7A, wherein the support 2A can be detached from the other layers by irradiating the photothermal conversion layer 3A with light, and wherein the adhesive layer 5A is formed such that it covers the side surface of the light blocking layer 4A.

Abstract: A material for a light emitting device containing a compound represented by the following formula (1): wherein each A independently represents a nitrogen atom or a carbon atom, which may have a substituent, and each of the rings consisting of A and nitrogen atoms independently represents an aromatic ring or an aromatic heterocyclic ring; and L represents a divalent linking group.

Abstract: Compounds comprising phosphorescent metal complexes comprising cyclometallated imidazo[1,2-f]phenanthridine and diimidazo[1,2-a:1?,2?-c]quinazoline ligands, or isoelectronic or benzannulated analogs thereof, are described. Organic light emitting diode devices comprising these compounds are also described.

Abstract: An organic electroluminescent element containing an anode and a cathode having therebetween a light emitting layer, wherein the light emitting layer contains a guest compound having a substructure represented by the following Formula (A): wherein Ra represents alkyl, alkenyl, alkynyl, cycloalkyl, aromatic hydrocarbon, aromatic heterocyclic or heterocyclic, Rb and Rc represent hydrogen or a substituent, A1 represents a group of atoms which forms an aromatic hydrocarbon ring or an aromatic heterocycle, M represents Ir or Pt, and a host compound having the following Formula (1): wherein Ra1 represents alkyl, alkenyl, alkynyl, cycloalkyl or heterocyclic, R1, R2 and R5 each represent hydrogen or a substituent, and n1, n2 and n5 each represent 0 to 4.

Abstract: An organic electroluminescent element containing an anode and a cathode having therebetween a light emitting layer, wherein the light emitting layer contains a guest compound having a substructure represented by the following Formula (A): wherein Ra represents alkyl, alkenyl, alkynyl, cycloalkyl, aromatic hydrocarbon, aromatic heterocyclic or heterocyclic, Rb and Rc represent hydrogen or a substituent, A1 represents a group of atoms which forms an aromatic hydrocarbon ring or an aromatic heterocycle, M represents Ir or Pt, and a host compound having the following Formula (1): wherein Ra1 represents alkyl, alkenyl, alkynyl, cycloalkyl or heterocyclic, R1, R2 and R5 each represent hydrogen or a substituent, and n1, n2 and n5 each represent 0 to 4.

Abstract: A problem of the invention is to provide an organic EL device having a high efficiency, a low driving voltage and a long life, by combining various materials for organic EL device, which are excellent in an injection or transportation performance of holes or electrons, and in stability and durability in a thin film, so as to enable the respective materials to effectively reveal their characteristics. The invention relates to an organic electroluminescent device including at least an anode electrode, a hole-injecting layer, a hole-transporting layer, an emitting layer, an electron-transporting layer and a cathode electrode in this order, in which the hole-injecting layer contains an arylamine compound having, in its molecule, a structure in which three or more triphenylamine structures are connected through a single bond or a hetero atom-free divalent group; and the hole-transporting layer contains an arylamine compound having two triphenylamine structures in its molecule.

Abstract: There is provided n organic light-emitting diode luminaire. The luminaire includes a first electrode, a second electrode, and a light-emitting layer therebetween. The light-emitting layer includes a small molecule host material having dispersed therein a first dopant having a first emitted color and a second dopant having a second emitted color. The overall emission color is white.

Abstract: A polymer compound comprising a repeating unit represented by the formula (I): [wherein X1 represents an oxygen atom, a sulfur atom or N(RN)—, R1 to R4 and RN represent a hydrogen atom, a halogen atom, an alkyl group, an alkenyl group, an alkynyl group, an alkoxy group, an alkylthio group, an aryl group, an aryloxy group, an arylthio group, an arylalkyl group, an arylalkoxy group, an arylalkylthio group, an arylalkenyl group, an arylalkynyl group, a mono-valent heterocyclic group or the like.].

Abstract: A method for manufacturing a LCD panel includes providing a substrate defining a TFT region and a pixel region; forming a transparent conductive layer and a first metal layer on the substrate in that order; forming a gate line in the TFT region, and a pixel electrode within the pixel region via a first photo-etching process; forming an insulating layer and a semiconductor layer on the substrate in that order; removing the insulating layer and the semiconductor layer from the pixel region; removing the first metal layer from the pixel region; forming a second metal layer on the substrate; forming a source electrode and a drain electrode in the TFT region via a second photo-etching process, and forming a protecting layer above the substrate.

Abstract: To achieve, in an oxide semiconductor thin layer transistor, both the stability of threshold voltage against electric stress and suppression of variation in the threshold voltage in a transfer characteristic. A thin film transistor includes an oxide semiconductor layer and a gate insulating layer disposed so as to be in contact with the oxide semiconductor layer, wherein the oxide semiconductor layer contains hydrogen atoms and includes at least two regions that function as active layers of the oxide semiconductor and have different average hydrogen concentrations in the layer thickness direction; and when the regions functioning as the active layers of the oxide semiconductor are sequentially defined as, from the side of the gate insulating layer, a first region and a second region, the average hydrogen concentration of the first region is lower than the average hydrogen concentration of the second region.

Abstract: A semiconductor device includes a ZnO-containing substrate containing Li, a zinc silicate layer formed above the ZnO-containing substrate, and a semiconductor layer epitaxially grown relative to the ZnO-containing substrate via the zinc silicate layer.

Abstract: A test structure for a through-silicon-via (TSV) in a semiconductor chip includes a first contact, the first contact being electrically connected to a first TSV; and a second contact, wherein the first contact, second contact, and the first TSV form a first channel, and a depth of the first TSV is determined based on a resistance of the first channel. A method of determining a depth of a through-silicon-via (TSV) in a semiconductor chip includes etching a first TSV into the semiconductor chip; forming a first channel, the first channel comprising the first TSV, a first contact electrically connected to the first TSV, and a second contact; connecting a current source to the second contact; determining a resistance across the first channel; and determining a depth of the first TSV based on the resistance of the first channel.

Abstract: A MEMS device has a first member that is movable relative to a second member. At least one of the first member and the second member has exposed silicon carbide with a water contact angle of greater than about 70 degrees.

Abstract: A thin film transistor comprising an insulating film, a gate electrode embedded in a superficial portion of the insulating film, a gate insulating film on the gate electrode and the insulating film, a semiconductor film on the gate insulating film, a channel protection film on a portion of the semiconductor film with end surfaces which have a forward tapered slope, a first electrode on the semiconductor film which mounts onto one tapered side of the channel protection film, and a second electrode on the semiconductor film which mounts onto the other tapered side of the channel protection film, where an edge of the gate electrode closest to the first electrode is offset towards the second electrode from the point where the first electrode abuts the semiconductor film.

Abstract: An object of the present invention is to provide a structure of a thin film circuit portion and a method for manufacturing a thin film circuit portion by which an electrode for connecting to an external portion can be easily formed under a thin film circuit. A stacked body including a first insulating film, a thin film circuit formed over one surface of the first insulating film, a second insulating film formed over the thin film circuit, an electrode formed over the second insulating film, and a resin film formed over the electrode, is formed. A conductive film is formed adjacent to the other surface of the first insulating film of the stacked body to be overlapped with the electrode. The conductive film is irradiated with a laser.

Abstract: An array structure, which includes a TFT, a passivation layer, a pixel electrode, a first connecting layer and a first spacer is provided. The TFT includes a gate, a source and a drain. The passivation layer overlays the TFT. The pixel electrode is located on the passivation layer. The first connecting layer is located on the pixel electrode and electrically connected to the pixel electrode and the drain. The first spacer is located on the first connecting layer.

Abstract: An organic light emitting diode display includes a thin film transistor on a substrate (1). The thin film transistor includes a gate electrode (2), a gate insulating film (3) that covers the gate electrode (2), a first semiconductor film (4) provided on the gate insulating film (3), a second semiconductor film (5) provided on the first semiconductor film (4), a back channel protection insulating film (7) and an ohmic contact film (8) provided on the second semiconductor film (5), and source/drain electrodes (9). A crystallinity of the first semiconductor film (4) is higher than that of the second semiconductor film (5). The back channel protection insulating film (7) is formed as one of an organic insulating film and an organic/inorganic hybrid insulating film. The thin film transistor has excellent off-state characteristics, swing characteristics, and saturation characteristics.

Abstract: A method of manufacturing an array substrate comprising: forming a data line and a gate line which are crossed with each other and a gate electrode on a base substrate, and the data line is discontinuously disposed so as to be separated from the gate line or the gate line is discontinuously disposed so as to be separated from the data line; forming an active layer and a gate insulating layer including bridge via holes and a source electrode via hole on the base substrate, and the bridge via holes are located at positions respectively corresponding to adjacent discontinuous sections of the data line or adjacent discontinuous sections of the gate line, and the source electrode via hole is located at a position corresponding to the data line; and forming a pixel electrode, a source electrode, a drain electrode and a bridge line on the base substrate, and the pixel electrode and the drain electrode are formed integrally, and the source electrode is connected to the data line through the source electrode via hole,

Abstract: Conventionally, photolithography and anisotropic etching are performed to form a plug between an electrode and a wiring, etc., thereby increasing the number of steps, getting the throughput worse, and producing unnecessary materials. To solve the problems, the present invention provides a method for manufacturing a display device, including the formation steps of a conductive layer or wirings, and a contact plug that can treat a larger substrate. In the case of forming a plug for electrically connecting conductive patterns comprising plural layers, a pillar made of a conductor is formed over a base conductive layer pattern, and then, after an insulating film is formed over the entire surface, the insulating film is etched back to expose the conductor pillar, and a conductive pattern in an upper layer is formed by ink jetting. In this case, when the conductor pillar is processed, a resist to be a mask can be formed in itself by ink jetting.

Abstract: In a vertical-type non-volatile memory device, an insulation layer pattern is provided on a substrate, the insulation layer pattern having a linear shape. Single-crystalline semiconductor patterns are provided on the substrate to make contact with both sidewalls of the insulation layer pattern, the single-crystalline semiconductor patterns having a pillar shape that extends in a vertical direction relative to the substrate. A tunnel oxide layer is provided on the single-crystalline semiconductor pattern. A lower electrode layer pattern is provided on the tunnel oxide layer and on the substrate. A plurality of insulation interlayer patterns is provided on the lower electrode layer pattern, the insulation interlayer patterns being spaced apart from one another by a predetermined distance along the single-crystalline semiconductor pattern. A charge-trapping layer and a blocking dielectric layer are sequentially formed on the tunnel oxide layer between the insulation interlayer patterns.

Abstract: An array substrate comprises a substrate provided with a circuit pattern and covering layers that cover the upper surfaces and side surfaces of respective portions of the circuit pattern.

Abstract: An electro-optical device comprises: a first data line extending in a first direction; a second data line extending in the first direction and arranged so as to be at least partially overlapped with the first data line; a first scanning line and a second scanning line extending in a second direction intersecting the first direction; a first transistor electrically connected to the first data line and electrically connected to the first scanning line; a first pixel electrode electrically connected to the first transistor; a second transistor electrically connected to the second data line and electrically connected to the second scanning line; and a second pixel electrode electrically connected to the second transistor.

Abstract: A crystalline material structure with reduced dislocation density and method of producing same is provided. The crystalline material structure is annealed at temperatures above the brittle-to-ductile transition temperature of the crystalline material structure. One or more stress elements are formed on the crystalline material structure so as to annihilate dislocations or to move them into less harmful locations.

Abstract: The present III-nitride semiconductor light-emitting device comprises: a first III-nitride semiconductor layer having a first conductivity type; a second III-nitride semiconductor layer having a second conductivity type different from the first conductivity type; an active layer disposed between the first III-nitride semiconductor layer and the second III-nitride semiconductor layer and generating light by recombination of electrons and holes; and a depletion barrier layer brought into contact with the active layer and having a first conductivity type.

Abstract: A gallium nitride substrate comprising a primary surface, the primary surface being tilted at an angle in a range of 20 to 160 degrees with respect to a C-plane of the substrate, and the substrate having a fracture toughness of more than or equal to 1.36 MN/m3/2.

Abstract: A high brightness light emitting diode includes a carrier substrate and an epitaxial multi-layer formed thereon. The carrier substrate includes a metal material and a medium, and a coefficient of thermal expansion (CTE) of the medium is less than a CTE of the metal material.

Abstract: A compound semiconductor device includes: a conductive SiC substrate; an AlN buffer layer formed on said conductive SiC substrate and containing Cl; a compound semiconductor buffer layer formed on said AlN layer which contains Cl, said compound semiconductor buffer layer not containing Cl; and a device constituent layer or layers formed above said compound semiconductor buffer layer not containing Cl.

Abstract: A method of reducing memory effects during an epitaxial growth process is provided in which a gas mixture comprising hydrogen gas and a halogen-containing gas is used to flush the CVD reaction chamber between growth steps.

Abstract: In a semiconductor device, optical signal transfer capabilities are implemented on the basis of silicon-based monolithic opto-electronic components in combination with an appropriate waveguide. Thus, in complex circuitries, such as microprocessors and the like, superior performance may be obtained in terms of signal propagation delay, while at the same time thermal requirements may be less critical.

Abstract: A light-emitting device allowed to obtain polarized light without increasing the number of components or the thickness thereof, and a display including the light-emitting device are provided. The light-emitting device includes: a light-emitting element including, on a substrate, a first electrode, a light-emitting layer and a second electrode in order from the substrate. The substrate has, on a surface facing the first electrode, a first concavo-convex structure including a plurality of strip-shaped protrusion sections with a width equal to or smaller than an upper wavelength limit of visible light, and the first electrode, the light-emitting layer and the second electrode each have, on a surface opposite to a surface facing the substrate, a second concavo-convex structure imitating the protrusion sections of the first concavo-convex structure.

Abstract: A Read-In Integrated Circuit scene generator incorporates an array of unit cells, with each cell having a switching control circuit. An array of emitting elements is associated with the unit cells and each element is connected with a lead to the switching control circuit of the associated cell. A first electrically conducting overlayer is deposited substantially covering the array of unit cells and connected for current supply. Each emitting element is connected to the first conducting overlayer and the first conducting overlayer includes vias through which each connecting lead from the emitting element to the switching control circuit extends. A second electrically conducting overlayer is deposited substantially covering the array of unit cells and connected for current return. Each switching control circuit is connected to the second conducting overlayer. The second conducting overlayer also has vias through which each lead from the emitting element extends to the switching circuit.

Abstract: A light source includes a substrate, a light emitting diode on the substrate, and a phosphor layer over the light emitting diode. A plate is on the phosphor layer. An attachment member is coupled to the plate and is configured to conduct heat away from the plate.

Abstract: A light-emitting device operating on a high drive voltage and a small drive current. LEDs (1) are two-dimensionally formed on an insulating substrate (10) of e.g., sapphire monolithically and connected in series to form an LED array. Two such LED arrays are connected to electrodes (32) in inverse parallel. Air-bridge wiring (28) is formed between the LEDs (1) and between the LEDs (1) and electrodes (32). The LED arrays are arranged zigzag to form a plurality of LEDs (1) to produce a high drive voltage and a small drive current. Two LED arrays are connected in inverse parallel, and therefore an AC power supply can be used as the power supply.

Abstract: A light emitting device includes: a first substrate; a second substrate; a light emitting unit interposed between the first substrate and the second substrate; and a sealing material bonding the first substrate to the second substrate and sealing the light emitting unit. The sealing material comprises V+4. In addition, a glass frit, a composition for forming a sealing material, and a method of manufacturing a light emitting device using the composition for forming a sealing material are provided to obtain the light emitting device. The sealing material of the light emitting device can be easily formed by coating and irradiation of electro-magnetic waves, so that manufacturing costs are low and deterioration of the light emitting unit occurring when sealing material is formed can be substantially prevented. The sealing material has good sealing properties and thus a light emitting device including the sealing material has a long lifetime.

Abstract: Methods for fabricating LED chips from a wafer and devices fabricated using the methods with one method comprising depositing LED epitaxial layers on an LED growth wafer to form a plurality of LEDs on the growth wafer. A single crystalline phosphor is bonded over at least some the plurality of LEDs so that at least some light from the covered LEDs passes through the single crystalline phosphor and is converted. The LED chips can then be singulated from the wafer to provide LED chips each having a portion of said single crystalline phosphor to convert LED light.

Abstract: System for wafer-level phosphor deposition. In an aspect, a semiconductor wafer is provided that includes a plurality of LED dies wherein at least one die includes an electrical contact, a photo-resist post covering the electrical contact, and a phosphor deposition layer covering the semiconductor wafer and surrounding the photo-resist post. In another aspect, a semiconductor wafer is provided that comprises a plurality of LED dies wherein at least one die comprises an electrical contact, a phosphor deposition layer covering the semiconductor wafer, and a cavity in the phosphor deposition layer exposing the at least one electrical contact.

Abstract: An LED lamp A1 is elongated in an axial direction x and includes a plurality of LED modules 30. Respective main light irradiation directions of the LED modules 30 are directed outward in radial directions that are perpendicular to the axial direction x, and the main light irradiation directions of the LED modules 30 are different from each other as viewed in the axial direction x. This arrangement provides a wider light irradiation range as viewed in the axial direction x.

Abstract: An organic light emitting diode display is disclosed. The organic light emitting diode display includes a plurality of subpixels that emit light of at least three colors, the plurality of subpixels each including a first electrode, an organic light emitting layer, and a second electrode. Each of the organic light emitting layers of at least two of the plurality of subpixels includes at least two electron transport layers. The organic light emitting layer of at least one of the plurality of subpixels includes at least one electron transport layer.

Abstract: An electroluminescent device includes: first to third pixel regions; a first electrode in each of the first to third pixel regions, wherein the first electrode of the third pixel region has a first thickness, the first electrode of the first pixel region has a second thickness less than the first thickness, and the first electrode of the second pixel region has a third thickness less than the second thickness; a second electrode in each of the first to third pixel regions; at least two electroluminescent units in each of the first and third pixel regions and disposed between the first electrode and second electrode, wherein one of the at least two electroluminescent units includes a blue light emitting layer and the other of the at least two electroluminescent units include a red/green light emitting layer; and a charge generation layer disposed between the at least two electroluminescent units.

Abstract: The present invention relates to a LED multi-side light source bracket, in particular to the bracket design that extends in the rectangular shape directly above the conducting pin for distribution and fixing of a plurality of chips before, after and above the rectangular block, wherein the chips are bridged to another conducting pin on the side through a plurality of conducting wires to be integrated with the resin or silicon lamp housing, the rectangular block support can be bent into the shape to double the areas over which chips can be fixed and enable a single LED to create multi-side uniform light source.

Abstract: Optoelectronic devices, junctions and methods of fabricating a device or junction where the emitter layer is of an indirect-band-gap material and the base layer is of a direct-band-gap material. The device or junction may have, among other structures and layers, a base layer of a first semiconductor material having a first conductivity type and further having a direct band gap and an emitter layer forming a junction with the base layer. In this embodiment, the emitter layer may be of a second semiconductor material having a second conductivity type and further having an indirect band gap. The optoelectronic device may have the semiconductor material of the emitter layer substantially lattice mismatched with the semiconductor material of the base layer in bulk form. Alternatively, the emitter layer may be substantially lattice matched with the base layer.

Abstract: A group III nitride semiconductor optical device includes: a substrate comprising a group III nitride semiconductor; a first group-III nitride semiconductor region on a primary surface of the substrate; a second group-III nitride semiconductor region on the primary surface of the substrate; and an active layer between the first group-III nitride semiconductor region and the second group-III nitride semiconductor region. The primary surface of the substrate tilts at a tilt angle in the range of 63 degrees to smaller than 80 degrees toward the m-axis of the group III nitride semiconductor from a plane perpendicular to a reference axis extending along the c-axis of the group III nitride semiconductor. The first group-III nitride semiconductor region, the active layer, and the second group-III nitride semiconductor region are arranged in the direction of the normal axis to the primary surface of the substrate. The active layer is configured to produce light having a wavelength in the range of 580 nm to 800 nm.

Abstract: A semiconductor light-emitting device of the invention includes: a semiconductor layer including a light-emitting layer and having a first major surface and a second major surface opposite to the first major surface; a phosphor layer facing to the first major surface; an interconnect layer provided on the second major surface side and including a conductor and an insulator; and a light-blocking member provided on a side surface of the semiconductor layer and being opaque to light emitted from the light-emitting layer.

Abstract: A method for manufacturing a semiconductor light-emitting device of the invention includes: forming a semiconductor layer including a light-emitting layer and a first interconnect layer on a major surface of a temporary substrate; dividing the semiconductor layer and the first interconnect layer into a plurality of chips by a trench; collectively bonding each divided portion of the first interconnect layer of a plurality of chips to be bonded not adjacent to each other out of the plurality of chips on the temporary substrate to a second interconnect layer while opposing the major surface of the temporary substrate and the major surface of a supporting substrate forming the second interconnect layer, and collectively transferring a plurality of the bonded chips from the temporary substrate to the supporting substrate after irradiating interfaces between the bonded chips and the temporary substrate and separating the chips and the temporary substrate from each other.

Abstract: An AC driven light emitting diode light apparatus, and its AC driven light emitting diode package element therein are provided. The AC driven light emitting diode package element includes a heat sinking substrate, a chip set, a pair of electrodes, and a package body. The heat sinking substrate has a fixing flange extended from a rim of the heat sinking substrate for fixing the heat sinking substrate on a support. The chip set is on the heat sinking substrate. The conductive electrodes are respectively set at two opposite sides of the heat sinking substrate. The package body envelops the heat sinking substrate, the chip set and a part of the conductive electrodes to be one.

Abstract: A light emitting device having a relatively simple configuration is provided that emits stable light having a plurality of wavelengths. The light emitting device 1 comprises, in sequence, a composite substrate 3 and a gallium nitride-based semiconductor layer 5 including a light emitting layer 9. The composite substrate 3 includes a base 19 and a gallium nitride layer, the gallium nitride-based semiconductor layer 5 being disposed on a principal surface of the gallium nitride layer, the angle ? defined by the c-axis of the gallium nitride layer and a normal line N1 to the principal surface S1 of the gallium nitride layer ranging from 50 to 130 degrees, the light emitting layer 9 emitting light with an absolute value of the degree of polarization of 0.2 or more, the base 19 containing a fluorescent material that emits a fluorescent light component induced by irradiation of a light component emitted from the light emitting layer 9.

Abstract: A light emitting semiconductor device comprising an LED having an emission aperture located on a surface of the LED and the emission aperture has a size that is smaller than a surface area of the LED where the emission aperture is formed. The device further includes a reflector surrounding both side walls, a bottom surface, and portions of a surface of the LED where the emission aperture is formed or surrounding the bottom surface and portions of the surface of the LED where the emission aperture is formed so that an area on the surface uncovered by the reflector is the emission aperture and is smaller than the area of the LED. Alternatively, in the light emitting semiconductor, the surface of the LED substantially aligned with the emission aperture may be roughened and the surface of the LED beyond the emission aperture may be smooth. The surface of the LED beyond the emission aperture may also be covered by a low loss reflector.

Abstract: In one aspect of the invention, an LED includes a substrate, an n-type semiconductor layer, a light emitting layer, a p-type semiconductor layer and a transparent conductive layer sequentially stacked on the substrate, and p-type and n-type electrodes. The p-type semiconductor layer has a rough surface region and at least one flat surface region. The transparent conductive layer has a rough surface region and a flat surface region corresponding to the rough surface region and the at least one flat surface region of the p-type semiconductor layer, respectively. The p-type electrode is disposed on the flat surface region of the transparent conductive layer. The n-type electrode is electrically couple to the n-type semiconductor layer.