Abstract: A method for forming silicide contacts in integrated circuits (ICs) is described. A spacer pull-back etch is performed during the salicidation process to reduce the stress between the spacer and source/drain silicide contact at the spacer undercut. This prevents the propagation of surface defects into the substrate, thereby minimizing the occurrence of silicide pipe defects. The spacer pull-back etch can be performed after a first annealing step to form the silicide contacts.

Abstract: Affords a III-V compound semiconductor substrate manufacturing method that enables enhancement of the substrate PL intensity. In such a III-V compound semiconductor substrate manufacturing method, first, the surface 3a of a wafer 3 is polished (polishing step). Second, the surface 3a of the wafer 3 is cleaned (first cleaning step S7). Next, the surface 3a of the wafer 3 is subjected to first dry-etching, employing a halogen-containing gas, while first bias voltage is applied to a chuck 24 for carrying the wafer 3. Subsequently, the surface 3a of the wafer 3 is subjected to second dry-etching, employing the halogen-containing gas (second dry-etching step S11), while second bias power lower than the first bias power is applied to the chuck 24.

Abstract: A method for the production of a component structure. On embodiment provides a semiconductor body having a first side. A first trench and a second trench are produced, which extend into the semiconductor body proceeding from the first side and are arranged at a distance from one another in a lateral direction of the semiconductor body. A first material layer in the first trench is produced. A third trench proceeding from the second trench is produced, extending as far as the first material layer in the first lateral direction.

Abstract: A method of manufacturing a semiconductor structure is provided. The method includes forming a hard mask pattern on a semiconductor substrate, wherein the hard mask pattern covers active regions; forming a trench in the semiconductor substrate within an opening defined by the hard mask pattern; filling the trench with a dielectric material, resulting in a trench isolation feature; performing an ion implantation to the trench isolation feature using the hard mask pattern to protect active regions of the semiconductor substrate; and removing the hard mask pattern after the performing of the ion implantation.

Abstract: Methods for fabricating FinFET structures having gate structures of different gate widths are provided. The methods include the formation of sidewall spacers of different thicknesses to define gate structures of the FinFET structures with different gate widths. The width of a sidewall spacer is defined by the height of the structure about which the sidewall spacer is formed, the thickness of the sidewall spacer material layer from which the spacer is formed, and the etch parameters used to etch the sidewall spacer material layer. By forming structures of varying height, forming the sidewall spacer material layer of varying thickness, or a combination of these, sidewall spacers of varying width can be fabricated and subsequently used as an etch mask so that gate structures of varying widths can be formed simultaneously.

Abstract: A photoresist trimming gas compound is provided which will selectively remove a resist foot or scum from the lower portions of sidewalls of a photoresist. Additionally, the trimmer compound hardens or toughens an upper surface of the photoresist thereby strengthening the photoresist. The trimmer compound includes O2 and at least one other gaseous oxide and is typically utilized in a dry etching process after a trench has been formed in a photoresist. The other oxide gases, in addition to the O2 may include CO2, SO2 and NO2.

Abstract: An etching method is provided in which selective etching can be carried out for an amorphous oxide semiconductor film including at least one of gallium and zinc, and indium. In the etching method, the selective etching is performed using an alkaline etching solution. The alkaline etching solution contains especially ammonia in a specific concentration range.

Abstract: A method for fabricating a semiconductor device. A preferred embodiment comprises forming a via in a semiconductor substrate, filling the via with a disposable material such as amorphous carbon, forming a dielectric layer on the substrate covering the via, performing a back side etch to expose the disposable material in the via. A back side dielectric layer is then depositing, covering the exposed via. A small opening is then formed, and the disposable material is removed, for example by an isotropic etch process. The via may now be filled with a metal and used as a conductor or a dielectric material. The via may also be left unfilled to be used as an air gap.

Abstract: The present invention provides porous organosilicate layers, and vapor deposition systems and methods for preparing such layers on substrates. The porous organosilicate layers are useful, for example, as masks.

Abstract: A zinc oxide (ZnO) film is fabricated. Metal-organic chemical vapor deposition (MOCVD) is used to obtain the film with few defects, high integrity and low cost through an easy procedure. The ZnO film above a silicon substrate has a matching crystal orientation to the substrate. Thus, the ZnO film is fit for ultraviolet light-emitting diodes (UV LED), solar cells and related laser devices.

Abstract: A method for forming an insulating film includes forming a silicon nitride film on a silicon surface by subjecting a target substrate wherein silicon is exposed in the surface to a treatment for nitriding the silicon, forming a silicon oxynitride film by heating the target substrate provided with the silicon nitride film in an N2O atmosphere, and nitriding the silicon oxynitride film.

Abstract: Methods are provided for processing a substrate for depositing an adhesion layer having a low dielectric constant between two low k dielectric layers. In one aspect, the invention provides a method for processing a substrate including depositing a barrier layer on the substrate, wherein the barrier layer comprises silicon and carbon and has a dielectric constant less than 4, depositing a dielectric initiation layer adjacent the barrier layer, and depositing a first dielectric layer adjacent the dielectric initiation layer, wherein the dielectric layer comprises silicon, oxygen, and carbon and has a dielectric constant of about 3 or less.

Abstract: A method for fabricating a thin film transistor and a thin film transistor includes a polycrystalline silicon layer formed by irradiating an amorphous silicon layer with a laser beam through an organic layer formed on the amorphous silicon layer and removing the organic layer.

Abstract: A spin addition method for catalyst elements is simple and very important technique, because the minimum amount of a catalyst element necessary for crystallization can be easily added by controlling the catalyst element concentration within a catalyst element solution, but there is a problem in that uniformity in the amount of added catalyst element within a substrate is poor. The non-uniformity in the amount of added catalyst element within the substrate is thought to influence fluctuation in crystallinity of a crystalline semiconductor film that has undergone thermal crystallization, and exert a bad influence on the electrical characteristics of TFTs finally structured by the crystalline semiconductor film. The present invention solves this problem with the aforementioned conventional technique.

Abstract: A semiconductor processing tool heats wafers using radiant heat and resistive heat in chamber or in a load lock where pressure changes. The wafers are heated in greater part with a resistive heat source until a transition temperature or pressure is reached, then they are heated in greater part with a radiant heat source. Throughput improves for the tool because of the wafers can reach a high temperature uniformly in seconds.

Abstract: The present invention generally relates to a woven preform for reinforced composite materials and a method of making thereof. Specifically, the present invention is a method of machine weaving fiber preforms for polymer matrix composites that consist of closed perimeters with multiple intersecting members in their interiors. More specifically, the invention is a woven preform and a method of forming thereof with closed cells at the outer edges with continuous hoop reinforcement in each cell of the preform. The woven preform is woven flat in both the warp and weft directions, and then unfolded to achieve the final shape of the structure, and can be processed into composite structural components using known methods such as resin transfer molding or chemical vapor infiltration. Thus, complicated shapes of all sizes can be woven on a conventional loom using the instant method.

Abstract: A reinforced fabric that includes a first fiber group and a thread. The first fiber group includes a plurality of fiber sets positioned substantially parallel to one another. Each of the fiber sets includes a plurality of fibers. The thread is formed of at least one strand of material. The thread has an outer surface that is formed of a material having a melting point that is less than the melting point of the fibers in the fiber sets. The thread is stitched about the fiber sets to at least partially maintain a position of the fiber sets relative to one another. The thread forms a plurality of heat created permanent closed loop structures in the reinforced fabric. At least one of the loop structures encircles at least one fiber set. At least one of the fibers in the fibers sets is not strongly bonded to the thread that encircles the fiber set.

Abstract: A titanium-containing oxide glass having a bulky form and substantially having a chemical composition represented by the formula: (M1)1-x(M2)x(Ti1-y1(M3)y1)y2Oz [wherein M1 represents an element selected from Ba, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Na and Ca; M2 represents at least one element selected from Mg, Ba, Ca, Sr, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Na, Sc, Y, Hf, Bi and Ag; M3 represents at least one element selected from V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Zr, Nb, Mo, Ru, Rh, Pd, Al, Si, P, Ga, Ge, In, Sn, Sb and Te; and x, y1, y2 and z satisfy the following requirements: 0?x?0.5, 0?y1<0.31, 1.4<y2<3.3, and 3.9<z<8.0, provided that x+y1?0 when M1 represents Ba, and y1?0 when both M1 and M2 represent Ba].

Abstract: A glass composition which is reduced in the amount of residual bubbles and is produced using smaller amounts of an environmentally unfriendly component such as arsenic oxide and antimony oxide. This glass composition comprises, in terms of mass %: 40-70% SiO2; 5-20% B2O3; 10-25% Al2O3; 0-10% MgO; 0-20% CaO; 0-20% SrO; 0-10% BaO; 0.001-0.5% Li2O; 0.01-0.5% Na2O; 0.002-0.5% K2O; and 0-1.0%, excluding 0%, Cl.

Abstract: An embodiment of the present invention provides an electronically tunable dielectric material, comprising at least one electronically tunable dielectric phase; and at least one compound of low loss complex perovskites, wherein said low loss complex pervoskites comprise two B site cations.

Abstract: The invention is an apparatus and method to remove hydrogen sulfide and siloxanes from biogas and destroy the contaminants in microwave reactors. Hydrogen sulfide and siloxane are removed from biogas using an adsorbent media such as activated carbon. The media is regenerated in a microwave reactor where the hydrogen sulfide and siloxane are removed in a sweep gas. In one process, siloxane is oxidized to silicon dioxide in a second microwave reactor and removed with a filter. Hydrogen sulfide if first oxidized to sulfur dioxide, then reduced to sulfur in a third microwave reactor and removed with a filter. In another process, siloxane is combined with water to form silicon dioxide and hydrogen sulfide is reduced to elemental sulfur in a microwave reactor. These reactants are removed with a filter. The remaining sweep gas containing hydrogen and low molecular weight hydrocarbons is returned to the biogas stream.

Abstract: A catalyst composition comprises (a) a MCM-22 family molecular sieve; and (b) a binder, wherein the MCM-22 family molecular sieve is characterized by an average crystal agglomerate size of less than or equal to 16 microns. The catalyst composition may further have a second molecular sieve having a Constraint Index of less than 12, e.g., less than 2. Examples of molecular sieve useful for this disclosure are a MCM-22 family molecular sieve, zeolite Y, and zeolite Beta. The catalyst composition may be used for the process of alkylation or transalkylation of an alkylatable aromatic compound with an alkylating agent.

Abstract: A polymerization catalyst composition for a radically polymerizable monomer of the present invention comprises a transition metal-containing phosphazenium composition which is produced by mixing a phosphazenium compound with a compound of a transition metal belonging to Groups 4 to 12 in the periodic table and an organic halogen compound.

Abstract: Photo energy transformation catalysts and methods for fabricating the same are provided. The method includes mixing a solution containing a positive valence element of Group IB, a solution containing a positive valence element of Group IIIA, and a solution containing a negative valence element of Group VIA to obtain a composition and forming a film from the composition by liquid phase deposition, wherein the film contains compounds including the elements of Group IB, Group IIIA, and Group VIA.

Abstract: A sulfur reduction catalyst useful to reduce the levels of sulfur in a cracked gasoline product comprises a metal vanadate compound. The metal vanadate compound can be supported on a molecular sieve such as a zeolite in which the metal vanadate compound is primarily located on the exterior surface of the pore structure of the zeolite and on the surface of any matrix material used to bind or support the zeolite.

Abstract: The invention provides a process which enables, in preparation of acrolein by catalytic gas-phase oxidation of propylene in the presence of molecular oxygen or a molecular oxygen-containing gas or in preparation of acrylic acid by catalytic gas-phase oxidation of acrolein in the presence of molecular oxygen or a molecular oxygen-containing gas, using single kind of atalyst, to suppress occurrence of localized extraordinarily high temperature spots (hot spots) in the catalyst layer and can stably maintain high acrolein or acrylic acid yield for a long time. The process is characterized by use of an oxide catalyst containing molybdenum as an essential component and having relative standard deviation of its particle size in a range of 0.02 to 0.20.

Abstract: A heat-sensitive transfer image-receiving sheet having at least one receptor layer containing a latex polymer which has a glass transition temperature of 50° C. or less, a latex polymer which has a glass transition temperature more than 50° C., and a wax dispersion, wherein at least one of the latex polymers is present in a particulate state without forming film; and a method of forming an image using the same.

Abstract: The use of a compound of formula (I) wherein X is (i), (ii) or (iii), formula (i), formula (ii), formula (iii) Y is O, S(O)m, NR3, CR5R6, CR5R6—CR7R8, O—CR7R8, S(O)m—CR7R8, NR3—CR7R8, CR5R6—O, CR5R6—S(O)m, CR5R6—NR3, SO2—NR3, NR3—SO2, NR3—O or O—NR3; m is 0, 1, or 2; the ring (T) formula (T) is a 5- or 6-membered aromatic or heteroaromatic ring; R1 to R10 are specified organic groups and n and is 0, 1, 2, 3 or 4; or salts or N-oxides thereof or compositions containing them in controlling insects, acarines, nematodes or molluscs. Novel compounds are also provided.

Abstract: The present invention relates to methods employing artificial receptors, such as combinatorial artificial receptor arrays. The present receptors include heterogeneous and immobilized combinations of building block molecules. In certain embodiments, combinations of 2, 3, 4, or 5 distinct building block molecules immobilized near one another on a support provide molecular structures that can be employed in the present methods. The present methods can develop artificial receptors that can then be employed to detect the receptor's ligand. The present methods can find compounds that disrupt one or more binding interactions.

Abstract: Disclosed is a method for immobilizing a target protein to the surface of silicon oxide-containing substance such as glass without modifying the surface of silicon oxide-containing substance by using a protein binding strongly to silicon oxide-containing substance. A protein capable binding strongly to silicon oxide-containing substance such as glass has been found, and thus a target protein can be directly bound and immobilized to the surface of silicon oxide-containing substance via the found protein. In addition, a fusion protein of the found protein and a target protein can be bound and immobilized to silicon oxide-containing substance.

Abstract: Combinatorial processing including stirring is described, including defining multiple regions of a substrate, processing the multiple regions of the substrate in a combinatorial manner, introducing a fluid into a first aperture at a first end of a body to dispense the fluid out of a second aperture at a second end of the body and into one of the multiple regions, and agitating the fluid using an impeller at a second end of the body to facilitate interaction of the fluid with a surface of the substrate.

Abstract: A method comprising contacting a zwitterionic surfactant, co-surfactant, and water to form a microemulsifier, and contacting the microemulsifier with an oleaginous fluid under low shear conditions to form a microemulsion. A method comprising introducing a first wellbore servicing fluid comprising at least one oleaginous fluid into a wellbore, wherein the first wellbore servicing fluid forms oil-wet solids and/or oil-wet surfaces in the wellbore, and contacting the oil-wet solids and/or oil-wet surfaces in the wellbore with a second wellbore servicing fluid comprising a zwitterionic surfactant, a co-surfactant, and a brine to form a microemulsion.

Abstract: Methods are provided that include a method comprising providing a acidic treatment fluid that comprises a base fluid, an acid composition, and a gelling agent that comprises clarified diutan; and introducing the acidic treatment fluid into at least a portion of a subterranean formation. In some embodiments, the acidic treatment fluid may be allowed to interact with a component of the subterranean formation so that the component is at least partially dissolved. In some embodiments, the acidic treatment fluid may be introduced into a pipeline. Additional methods are also provided.

Abstract: At least in aspect, the invention provides methods that include a method comprising: contacting a metal surface with an acidic fluid comprising an aqueous base-fluid, an acid, a corrosion inhibitor, and a corrosion inhibitor intensifier composition comprising an intensifier compound that corresponds to the following formula: wherein R1 is a methyl or ethyl group, and R2 is H or an alkyl, aryl, alkyl aryl, alkylthio aryl, alkyloxy aryl, halogenated aryl, phenyl, alkyl phenyl, alkylthio phenyl, alkyloxyphenyl, or a halogenated phenyl group.

Abstract: A method for in-situ solid lubrication of sliding electrical contacts includes the steps of providing a device having a movable electrically conductive first member and an electrically conductive second member, the first and second member being in electrical contact at a slideable electrical contact, and automatically applying an electrically conductive solid lubricant transfer film to the slideable electrical contact during operation of the device. The applying step can be a deposition of the electrically conductive solid lubricant transfer film on a surface of the first member, wherein the electrically conductive solid lubricant transfer film is carried by movement of the first member to the electrical contact.

Abstract: The present invention provides a lubricating oil composition comprising a lube base oil comprising a mineral oil and/or a synthetic oil; (A) an alkenylsuccinimide or an alkylsuccinimide and/or a boron-containing derivative thereof in an amount of 0.01 to 0.14% by mass based on the composition in terms of the nitrogen content as an ashless dispersant, wherein an alkenylsuccic acid monoimide or an alkylsuccinic acid monoimide and/or a boron-containing derivative thereof in the ashless dispersant is 0.05% by mass or less in terms of nitrogen content; and (B) a dialkyldiphenylamine compound in an amount of 0.3 to 5.0% by mass and a hindered phenol compound in an amount of 0 to 2.5% by mass based on the composition as an antioxidant, and (C) a sulfated ash of the lubricating oil composition is 1.2% by mass or less.

Abstract: A lubricating oil composition favorably employable for trunk piston diesel engines contains an overbased sulfurized alkylphenol calcium salt, at least two (preferably three) overbased alkylsalicylic acid calcium salts having different base ratios and hydrocarbyl groups of different carbon atom numbers, a borated ashless dispersant, and a zinc dihydrocarbyldithiophosphate.

Abstract: Reaction of a carboxylic acid-containing polymer with certain aromatic amines results in dispersant viscosity modifiers with improved soot handling performance in heavy-duty diesel engines, compared with reaction with non-aromatic amines.

Abstract: The present disclosure relates to organic molybdenum complexes prepared by reacting a Mannich base with a source of molybdenum. The complexes may be useful in lubricating oil compositions as at least one of an antioxidant, a deposit control additive, and a friction modifier. The organic molybdenum complexes may show a reduced tendency to color finished oils.

Abstract: This invention encompasses a lubricating oil composition contaminated with at least about 0.3 wt % of a biodiesel fuel or a decomposition product thereof, based on the total weight of the lubricating oil composition, comprising: a. a major amount of base oil of lubricating viscosity; and b. a diarylamine compound, wherein, the amount of the diarylamine compound is at least about 0.1 wt. %, based on the total weight of the lubricating oil composition. Methods of using the lubricating oil compositions are also described.

Abstract: This invention relates to processes for making nitro compounds derived from C2-C30 unsaturated fatty acids; C2-C30 unsaturated fatty oils; esters derived from the reaction of C1-C20 alcohols with unsaturated C2-C30 fatty acids; C2-C20 polyolefins; C4-C20 polydiolefins; C8-C20 copolymers derived from polyolefins and vinyl aromatics; and C4-C30 alkylated phenols using nitric acid or gaseous nitrogen dioxide. This class of extreme-pressure additives was found extremely effective in processing steel, stainless steel and special titanium and nickel or low-iron alloys.

Abstract: An additive composition providing improved low temperature viscosity, corrosion and detergent properties when used in lubricating oils for internal combustion engines is presented. The additive composition comprises an unsulfurized carboxylate detergent-dispersant additive having been modified by incorporation of from about 3.2 wt % to 7.5 wt %, based on the total additive composition, of an alkaline earth metal salt of a linear, saturated carboxylic acid having from about 16 to about 20 carbon atoms and wherein the additive composition has a superalkalinization ratio of less than about 1.4:1, a TBN of less than about 200 and a sediment value of less than about 0.2% by volume.

Abstract: A biomass-based fuel pellet, such as a fuel pellet which includes thermoplastic polymeric material and a substantial amount of cellulosic material, e.g. cellulosic material derived from biomass source(s), is provided. The fuel pellet commonly includes about 5 to 15 wt. % of the thermoplastic polymeric material and at least about 75 wt. % cellulosic material. Optionally, the fuel pellet may comprise a lignin additive. Many embodiments of the fuel pellets are suitable for use in a coal-fired furnace and/or in other industrial boiler applications.

Abstract: The present invention is directed to a personal cleansing product which can be sized as a single use personal cleansing product. The cleansing product is an extruded foam product which can disintegrate upon contact with water when used in the standard fashion to wash. As the foam disintegrates, the cleansing agent held in the foam matrix is released. The disintegration of the product can take place slowly, over a period of time such that when an individually sized cleanser is used to scrub until it completely disintegrates, scrubbing duration is long enough to ensure desired levels of cleanliness have been attained. Alternatively, the product can disintegrate immediately, and release all of the soap at essentially one time. The product is an extruded foam expanded from a mixture of a natural starch, a nucleating agent, a water soluble disintegrant, a blowing agent, a water soluble polymer, and a soap base.

Abstract: Provided is a detergent composition containing a polyoxyethylene alkyl ether sulfate or an alkyl sulfate which composition is excellent and creamy in foam quality, and excellent in storage stability. The detergent composition contains the following components (A), (B) and (C): (A) a polyoxyethylene alkyl ether sulfate or an alkyl sulfate represented by a general formula (1): R1O(CH2CH2O)nSO3M??(1); (B) myristyl alcohol; (C) one or more nonionic surfactants selected from the group consisting of an alkoxylate (C-1) represented by a general formula (2) and a glyceryl ether (C-2) represented by a general formula (3): R2O-(AO)n—R3??(2) wherein the weight ratio of the component (A) to the component (B) is (A)/(B)=91.5/8.5 to 80/20, the weight ratio of the component (A) to the component (C) is (A)/(C)=98/2 to 85/15, the weight ratio of the component (B) to the component (C) is (B)/(C)=90/10 to 30/70, and the content of the component (B) is 1.6 to 14% by weight.

Abstract: A removal composition and process for removing low-k dielectric material, etch stop material, and/or metal stack material from a rejected microelectronic device structure having same thereon. The removal composition includes hydrofluoric acid. The composition achieves at least partial removal of the material(s) from the surface of the microelectronic device structure having same thereon, for recycling and/or reuse of said structure, without damage to the underlying polysilicon or bare silicon layer employed in the semiconductor architecture.

Abstract: The present invention relates to compositions including a water soluble magnesium salt, water soluble calcium salt, and silicate or carbonate, which have a beneficial effect on corrosion during cleaning. The present compositions can reduce corrosion of glass or aluminum. The present invention also relates to methods employing these compositions.

Abstract: Microcapsule for use in a liquid detergent composition, the microcapsule having a core and a polymeric polyanion-polycation complex shell wherein the polyanion component is capable of gelling in the presence of calcium and has a storage modulus when gelled with 0.05 moles/litre of calcium of less than about 150 Pa at an angular frequency of about 0.5 rad/s and a polyanion concentration of about 3.8% by weight at 25° C. The invention also relates to a process for making the microcapsules, liquid detergents comprising the microcapsules and cleaning methods using the liquid detergents.

Abstract: CFC replacement solvent compositions, methods of using the same and methods of making the same. These compositions meet or exceed the solvency, flammability, and compatibility requirements for CFC's while providing similar or improved environmental and toxicological properties. These solvent compositions have applications including, but not limited to, oxygen handling, refrigeration or heat pumps, electronics, implantable prosthetic devices, and optical equipment.

Abstract: A coated granule including a core. The core includes a uniform mixture of a detergent enzyme having an alkaline pH activity optimum, and an acidic buffer component. The acidic buffer component has a pH of 1 to below 7 when measured as a 10% aqueous solution with a pKa in the range of 4 to 9.