Abstract: The present invention relates to a process for producing an Sn(II)-crosslinked novolac material, to the Sn(II)-crosslinked novolac material obtainable by the process according to the invention, to a process for producing an electroactive material comprising a carbon phase C and a tin phase and/or tin oxide phase, comprising the process for producing an Sn(II)-crosslinked novolac material and a subsequent carbonization step, to the electroactive material obtainable by the process according to the invention, and to electrochemical cells and batteries comprising the electroactive material.

Abstract: The present invention provides a method for producing a high quality positive electrode active material for lithium ion batteries at low cost and at excellent production efficiency. The method for producing a positive electrode active material for lithium ion batteries includes a step of firing a powder of lithium-containing carbonate that is a precursor for positive electrode active material for lithium ion batteries in a rotary kiln. In the step, a temperature at a powder feed part inside of the rotary kiln is kept at 500° C. or more.

Abstract: A chlorinated oligogermane as a pure compound or mixture of compounds which each have at least one direct Ge—Ge bond, substituents of which include chlorine or chlorine and hydrogen and atom ratio for substituent:germanium is at least 2:1 in the composition thereof, wherein a) the mixture has on average a Ge:Cl ratio of 1:1 to 1:3, or the pure compound has a Ge:Cl ratio of 1:2 to 1:2.67, and b) the mixture has an average number of germanium atoms of 2 to 8.

Abstract: A polycrystalline scintillator for detecting soft X-rays, which comprises Ce as a light-emitting element and at least Y, Gd, Al, Ga and O, and has a garnet crystal structure, and a composition represented by the general formula of (Y1?x?zGdxCez)3+a(Al1?uGau)5?aO12, wherein 0?a?0.1, 0.15?x?0.3, 0.002?z?0.015, and 0.35?u?0.55, with 0.05-1 ppm by mass of Fe and 0.5-10 ppm by mass of Si by outer percentage, a ratio ?50/?100 of 3 or more, wherein ?50 is an absorption coefficient of X-rays at 50 keV, and ?100 is an absorption coefficient of X-rays at 100 keV, and afterglow of 800 ppm or less after 3 ms from the termination of X-ray irradiation.

Abstract: A material composition with specific segment wavelength matching refractive index includes (a) resin or a composite thereof to serve as a bonding agent and (b) a medium material of metal oxides or complex metal oxides of specific particle size to serve as an additive for specific segment wavelength matching refractive index. The composition is formed by combining the bonding agent and additive. The composition material uses the wavelength of light emitting from a light-emitting diode (LED) die or excited from a fluorescent agent as the range of a segment to add nanometer particles of D=?/4n optic thickness as basis for formation of an effective medium layer and thus providing a matching refractive index for wavelength of the specific segment bandwidth. Corresponding to different refractive indexes nx of LED die materials, proper amounts of nanometer particles are selectively added to have the refractive index match the LED die.

Abstract: Ion transport membrane oxidation system comprising (a) two or more membrane oxidation stages, each stage comprising a reactant zone, an oxidant zone, one or more ion transport membranes separating the reactant zone from the oxidant zone, a reactant gas inlet region, a reactant gas outlet region, an oxidant gas inlet region, and an oxidant gas outlet region; (b) an interstage reactant gas flow path disposed between each pair of membrane oxidation stages and adapted to place the reactant gas outlet region of a first stage of the pair in flow communication with the reactant gas inlet region of a second stage of the pair; and (c) one or more reactant interstage feed gas lines, each line being in flow communication with any interstage reactant gas flow path or with the reactant zone of any membrane oxidation stage receiving interstage reactant gas.

Abstract: Matrixes doped with semiconductor nanocrystals are provided. In certain embodiments, the semiconductor nanocrystals have a size and composition such that they absorb or emit light at particular wavelengths. The nanocrystals can comprise ligands that allow for mixing with various matrix materials, including polymers, such that a minimal portion of light is scattered by the matrixes. The matrixes are optionally formed from the ligands. The matrixes of the present invention can be used as refractive index matching components, filters and antireflective coatings on optical devices and as down-converting layers. Processes for producing matrixes comprising semiconductor nanocrystals are also provided. Nanostructures having high quantum efficiency, small size, and/or a narrow size distribution are also described, as are methods of producing indium phosphide nanostructures and core-shell nanostructures with Group II-VI shells.

Abstract: The invention relates to novel polymers of benzodithiophene, methods and materials for their preparation, their use as semiconductors in organic electronic (OE) devices, and to OE devices comprising these polymers.

Abstract: There is described a coating composition useful for forming a transfer member suitable for use with an image forming system. The composition includes coating an ultraviolet (UV) curable mixture comprising a chlorinated polyester resin, a reactive diluent, conductive species and a photoinitiator on a substrate. The UV curable mixture is cured with ultraviolet energy. The cured mixture is then removed from the substrate.

Abstract: Disclosed are a process for preparing a solution comprising few-layered graphene, a process for preparing a few-layered graphene solid, and a process for preparing a film thereof.

Abstract: Multicomponent nanoparticles materials and apparatuses and processes therefor are disclosed. In one aspect of the disclosure, separate particles generated from solution or suspension or by flame synthesis or flame spray pyrolysis, and the resultant particles are mixed in chamber prior to collection or deposition. In another aspect of the disclosure, nanoparticles are synthesized in stagnation or Bunsen flames and allowed to deposit by theirnophoresis on a moving substrate. These techniques are scalable allowing mass production of multicomponent nanoparticles materials and films. The foregoing techniques can be used to prepare composites and component devices comprising one ore more lithium based particles intimately mixed with carbon particles.

Abstract: A polyurethane elastomer showing desirable conductivity properties comprises at least 0.3 percent by weight of an aggregated particulate carbon black, having a particle size of less than or equal to 100 nanometers, that forms a continuous conductive pathway within the polyurethane elastomer. The polyurethane elastomer may exhibit a surface resistivity ranging from 1×104 to 1×108 ohms. It may be made by first preparing an isocyanate-terminated prepolymer containing the carbon black, the prepolymer having a volume resistivity of from 1×104 to 1×108 ohms, and then reacting the isocyanate-terminated prepolymer with an isocyanate-reactive component. The proportion of the prepolymer ensures that it forms a continuous phase in the final elastomer.

Abstract: A composite material comprises a filled skutterudite matrix of formula (I) IyCo4Sb12 in which (I) represents at least one of Yb, Eu, Ce, La, Nd, Ba and Sr, 0.05?y<1; and GaSb particles within the filled skutterudite matrix, wherein the composite material comprises 0.05-5 mol % GaSb particles. Compared with conventional materials, the composite material exhibits a substantially increased Seebeck coefficient, a slightly decreased overall thermal conductivity, and a substantially increased thermoelectric performance index across the whole temperature zone from the low temperature end to the high temperature end, as well as a greatly enhanced thermoelectric efficiency.

Abstract: The present invention is directed to an electrically conductive composition comprising (i) an electrically conductive metal, (ii) a component selected from the group consisting of Li2RuO3, ion-exchanged Li2RuO3 and mixtures thereof, and (iii) a glass frit all dispersed in an organic medium. The present invention is further directed to an electrode formed from the composition and a semiconductor device and, in particular, a solar cell comprising such an electrode. The electrodes provide good adhesion and good electrical performance.

Abstract: The present invention is directed to an electrically conductive composition comprising (a) an electrically conductive metal; (b) a Rh-containing component; (c) a Pb—Te—O; and (d) an organic medium; wherein the electrically conductive metal, the Rh-containing compound, and the Pb—Te—O are dispersed in the organic medium. The present invention is further directed to an electrode formed from the composition and a semiconductor device and, in particular, a solar cell comprising such an electrode. Also provided is a process for forming such an electrode. The electrodes provide good adhesion and good electrical performance.

Abstract: A metal chloride gas generator includes: a tube reactor including a receiving section for receiving a metal on an upstream side, and a growing section in which a growth substrate is placed on a downstream side; a gas inlet pipe arranged to extend from an upstream end with a gas inlet via the receiving section to the growing section, for introducing a gas from the upstream end to supply the gas to the receiving section, and supplying a metal chloride gas produced by a reaction between the gas and the metal in the receiving section to the growing section; and a heat shield plate placed in the reactor to thermally shield the upstream end from the growing section. The gas inlet pipe is bent between the upstream end and the heat shield plate.

Abstract: Novel UV absorbing monomers are disclosed. The UV absorbers are particularly suitable for use in intraocular lens materials.

Abstract: A fastener removal device comprising a handle and a head, wherein there is a first end of the handle and a second end, the second end forming a toothed pad, wherein one end of the head is shaped as a toothed pad, wherein the other end of the head is shaped as a bifurcated claw, wherein said head contains an opening in the middle, such that the second end of the handle extends through the opening in the head.

Abstract: Power unit that can be telescopically lengthened/shortened and performs linear movement which power unit comprises cylindrical parts (1-3) moving telescopically within each other in which case the mentioned parts are equipped with at least external or internal threads in such a way that the mentioned parts form a power unit that can be lengthened/shortened when the parts are being rotated in relation to each other and that at least one part (3) of the mentioned parts (1-3) is locked to be non-rotating or locked to rotate in a different way than the part (1) of the mentioned parts (1-3) to which part a rotating producing movement to the power unit is arranged. In order to reduce the construction weight of the power unit the mentioned parts (1-3) are made of plastic and of the mentioned parts the inner diameter (d) of the part (3) having the smallest diameter is over 25% of the useful height (H) produced by the mentioned smallest part.

Abstract: A cargo grabbing apparatus is disclosed herein. In various aspects, the cargo grabbing apparatus includes a handle having a handle end and an opposite handle end, and a bar connected at a right angle to the handle proximate the handle end. In various aspects, a tube is disposed upon portions of the bar and disposed upon portions of the handle generally proximate the handle end, with the portions of the tube disposed upon the bar generally aligned longitudinally the bar and with the portions of the tube generally aligned longitudinally with the handle. A cord may be slideably received within the tube, the cord end and the opposing cord end of the cord manipulable by the user for placement about portions of cargo, in various aspects. This Abstract is presented to meet requirements of 37 C.F.R. §1.72(b) only. This Abstract is not intended to identify key elements of the apparatus and methods disclosed herein or to delineate the scope thereof.

Abstract: A chain puller for use in marine salvage that includes a chain pulling platform having linearly disposed first and second chain stoppers. Each chain stopper includes a pair of pivotal doors that permit the passage of a chain in one direction while stopping the action of a chain moving in the opposite direction. The action on the pivotal doors uses gravity for vertical alignment. The pivotal doors are spaced apart the distance of a vertical chain-link in the static position and are pivotally spread apart to permit movement of the chain in one direction in the dynamic position.

Abstract: A traction device for paying out and retrieving a flexible line including a line mover, wherein the line mover includes at least one movable friction surface, the friction surface in total defines at least two arc sections configured to move the line along with the arc sections, in use the line is wound around the friction surface such that the line has a first contact area being in contact with the first arc section and a second contact area being in contact with the second arc section, and the traction device includes a line controller coupled to the line between the first contact area and the second contact area and configured to control the velocity with which the line in use is fed to the second arc section, and also a method and use of the traction device.

Abstract: A lift assembly system and method can include: a funnel-shaped drum having a constant diameter portion and a gradually increasing diameter portion; a cable management system adapted to position a cable in a single layer in a tray; a beam clamp tube receiver adapted to allow a tube to slide relative to a beam and be secured to the beam; a cable keeper and a slack line detector adapted to maintain cables in position about a drum upon loss of cable tension; a horizontally oriented low profile cable adjuster adapted to adjust the length of a cable; an overspeed braking mechanism; a fleet pivot arm pivotable on the end of a tube so as to guide cables along a desired fleet angle; and/or a pull-type load sensor connected between a tube and a drum adapted to sense changes in a load force and adjust movement of a load.

Abstract: A lifting mechanism or locking mechanism includes a housing, an axle attached to the housing, and an element including a cam surface mounted for rotation on the axle. The distance between the cam surface and the housing changes between a maximum clearance distance and a minimum clearance distance as the element rotates about the axle. The lifting mechanism also includes a line which can be moved between a first position over the cam surface and a second position.

Abstract: Nonvolatile memory elements and memory devices including the nonvolatile memory elements. A nonvolatile memory element may include a memory layer between two electrodes, and the memory layer may have a multi-layer structure. The memory layer may include a base layer and an ionic species exchange layer and may have a resistance change characteristic due to movement of ionic species between the base layer and the ionic species exchange layer. The ionic species exchange layer may have a multi-layer structure including at least two layers. The nonvolatile memory element may have a multi-bit memory characteristic due to the ionic species exchange layer having the multi-layer structure. The base layer may be an oxygen supplying layer, and the ionic species exchange layer may be an oxygen exchange layer.

Abstract: Structures and methods to enhance cycling endurance of BEOL memory elements are disclosed. In some embodiments, a memory element can include a support layer having a smooth and planar upper surface as deposited or as created by additional processing. A first electrode is formed the smooth and planar upper surface. The support layer can be configured to influence the formation of the first electrode to determine a substantially smooth surface of the first electrode. The memory element is formed over the first electrode having the substantially smooth surface, the memory element including one or more layers of an insulating metal oxide (IMO) operative to exchange ions to store a plurality of resistive states. The substantially smooth surface of the first electrode provides for uniform current densities through unit cross-sectional areas of the IMO. The memory element can include one or more layers of a conductive metal oxide (CMO).

Abstract: A nonvolatile memory device, a method of fabricating the nonvolatile memory device and a processing system including the nonvolatile memory device. The nonvolatile memory device may include a plurality of internal electrodes that extend in a direction substantially perpendicular to a face of a substrate, a plurality of first external electrodes that extend substantially in parallel with the face of the substrate, and a plurality of second external electrodes that also extend substantially in parallel with the face of the substrate. Each first external electrode is on a first side of a respective one of the internal electrodes, and each second external electrode is on a second side of a respective one of the internal electrodes. These devices also include a plurality of variable resistors that contact the internal electrodes, the first external electrodes and the second external electrodes.

Abstract: Non-volatile resistive-switching memories formed using anodization are described. A method for forming a resistive-switching memory element using anodization includes forming a metal containing layer, anodizing the metal containing layer at least partially to form a resistive switching metal oxide, and forming a first electrode over the resistive switching metal oxide. In some examples, an unanodized portion of the metal containing layer may be a second electrode of the memory element.

Abstract: An ultra-high-density vertical cross-point array comprises a plurality of horizontal line layers having horizontal lines interleaved with a plurality of vertical lines arranged in rows and columns. The vertical lines are interleaved with the horizontal lines such that a row of vertical lines is positioned between each consecutive pair of horizontal lines in each horizontal line layer. Each vertical line comprises a center conductor surrounded by a single or multi-layered memory film. Accordingly, when interleaved with the horizontal lines, two-terminal memory cells are integrally formed between the center conductor of each vertical line and each crossing horizontal line. By configuring the vertical and horizontal lines so that a row of vertical lines is positioned between each consecutive pair of horizontal lines, a unit memory cell footprint of just 2F2 may be realized.

Abstract: A nonvolatile memory cell is able to reduce the size per the unit area by employing a dual gate structure where the chalcogenide compound is used for a channel. The nonvolatile memory cell includes a phase-change layer, a first and a second gate that are in contact with sides of the phase-change layer to face each other across the phase-in change layer and control a current flowing through the phase-change layer by each gate being arranged to induce the phase transition of the phase-change layer independently of the other.

Abstract: Provided are a light emitting device, a method of manufacturing the same, a light emitting device package, and a lighting system. The light emitting device includes: a first conductive semiconductor layer; a superlattice layer on the first conductive semiconductor layer; an active layer on the superlattice layer; and a second conductive semiconductor layer on the active layer. The superlattice layer comprises InxGa(1?x)N(0<x<1) doped with an n-type dopant and undoped InyGa(1?y)N(0<y<1).

Abstract: An embodiment of the present invention improves the fabrication and operational characteristics of a type-II superlattice material. Layers of indium arsenide and gallium antimonide comprise the bulk of the superlattice structure. One or more layers of indium antimonide are added to unit cells of the superlattice to provide a further degree of freedom in the design for adjusting the effective bandgap energy of the superlattice. One or more layers of gallium arsenide antimonide are added to unit cells of the superlattice to counterbalance the crystal lattice strain forces introduced by the aforementioned indium antimonide layers.

Abstract: An embodiment of the present invention improves the fabrication and operational characteristics of a type-II superlattice material. Layers of indium arsenide and gallium antimonide comprise the bulk of the superlattice structure. One or more layers of indium antimonide are added to unit cells of the superlattice to provide a further degree of freedom in the design for adjusting the effective bandgap energy of the superlattice. One or more layers of gallium arsenide antimonide are added to unit cells of the superlattice to counterbalance the crystal lattice strain forces introduced by the aforementioned indium antimonide layers.

Abstract: Disclosed is a carbazole serial compound, having a general formula as: wherein X is selected from a halogen atom, a cyano group, a substituted or non-substituted C1-40 alkyl group, a substituted or non-substituted C2-40 alkenyl group, a substituted or non-substituted C2-40 alkynyl group, a substituted or non-substituted C6-40 aryl group, a substituted or non-substituted C4-40 hetero aryl group, a substituted or non-substituted C6-40 aryl amino group, or a substituted or non-substituted C1-40 alkyl amino group. Each R is independently selected from a hydrogen atom, a cyano group, a substituted or non-substituted C1-40 alkyl group, a substituted or non-substituted C2-40 alkenyl group, a substituted or non-substituted C2-40 alkynyl group, a substituted or non-substituted C6-40 aryl group, a substituted or non-substituted C4-40 hetero aryl group, a substituted or non-substituted C6-40 aryl amino group, or a substituted or non-substituted C1-40 alkyl amino group.

Abstract: An organic electroluminescent element includes a pair of electrodes composed of a positive electrode and a negative electrode, with at least one of the electrodes being transparent or semi-transparent, and one or more organic compound layers interposed between the pair of electrodes, with at least one layer containing one or more charge transporting polyesters represented by the following formula (I), wherein A1 represents at least one selected from structures represented by the following formula (II) and X represents a group represented by the following formula (III)]:

Abstract: Asphaltene components are useful as organic electronic materials, especially in the form of thin films, in organic electronic devices, such as optoelectronic devices, for example, photodiodes (e.g., photovoltaic cells), phototransistors, photomultipliers, integrated optical circuits, photoresistors, and the like.

Abstract: There are provided a novel organic compound that has an excellent luminescent hue and that can produce high-efficiency, high-intensity, and long-life light output, and an organic light-emitting device containing the novel organic compound. There are provided 12,12-dimethyl-12H-benzo[5,6]-s-indaceno[1,2,3-cd]pyrene having a substituent at a particular position, which can emit green light with high color purity, and an organic light-emitting device containing this compound. The substituent at a particular position is selected from a hydrogen atom, substituted and unsubstituted alkyl groups, and substituted and unsubstituted aryl groups.

Abstract: A thin film transistor (TFT) that includes a gate, an oxide semiconductor layer, a gate insulator, a source, and a drain is provided. The gate insulator is located between the oxide semiconductor layer and the gate. The source and the drain are in contact with different portions of the oxide semiconductor layer. Each of the source and the drain has a ladder-shaped sidewall that is partially covered by the oxide semiconductor layer. A method for fabricating the above-mentioned TFT is also provided.

Abstract: An oxide semiconductor transistor comprising an oxide semiconductor layer with high conductivity is provided. A semiconductor device including an oxide semiconductor layer comprising an oxide containing indium, gallium, and zinc (IGZO) and a particle of indium oxide; a gate electrode overlapping with a channel formation region in the oxide semiconductor layer with a gate insulating film interposed therebetween; and a source electrode and a drain electrode overlapping with a source region and a drain region in the oxide semiconductor layer. The semiconductor device may be a top-gate oxide semiconductor transistor or a bottom-gate oxide semiconductor transistor. The oxide semiconductor layer may be formed over or below the source electrode and the drain electrode.

Abstract: A semiconductor device including an oxide semiconductor and including a more excellent gate insulating film is provided. A highly reliable and electrically stable semiconductor device having a small number of changes in the film structure, the process conditions, the manufacturing apparatus, or the like from a mass production technology that has been put into practical use is provided. A method for manufacturing the semiconductor device is provided. The semiconductor device includes a gate electrode, a gate insulating film formed over the gate electrode, and an oxide semiconductor film formed over the gate insulating film. The gate insulating film includes a silicon nitride oxide film, a silicon oxynitride film formed over the silicon nitride oxide film, and a metal oxide film formed over the silicon oxynitride film. The oxide semiconductor film is formed over and in contact with the metal oxide film.

Abstract: With a TFT using an oxide semiconductor film, there is such an issue that oxygen deficit is generated in a surface region of the oxide semiconductor film after performing plasma etching of a source/drain electrode, thereby increasing the off-current. Provided is a TFT which includes: a gate electrode on an insulating substrate; a gate insulating film on the gate electrode; an oxide semiconductor film containing indium on the gate insulating film; and a source/drain electrode on the oxide semiconductor film. Further, the peak position derived from an indium 3d orbital in the XPS spectrum of a surface layer in a part of the oxide semiconductor film where the source/drain electrode is not superimposed is shifted towards a high energy side than the peak position derived from the indium 3d orbital in the XPS spectrum of an oxide semiconductor region existing in a lower part of the surface layer.

Abstract: A transistor, such as a vertical metal field effect transistor, can include a substrate including a ZnO-based material, and a structure disposed on a first side of the substrate comprising of AlGaN-based materials and electrodes disposed on the second side of the substrate. The transistor can also include a plurality of semiconductor layers and a dielectric layer disposed between the plurality of semiconductor layers and electrode materials.

Abstract: In a TFT that adopts an oxide semiconductor as an active layer and has a resistance layer interposed between the active layer and one of a source and drain electrode, while Vth close to 0 V and a small off current are sustained, an on-current is increased. In a thin-film transistor including a gate electrode, a gate insulating film, a semiconductor layer, a source electrode, and a drain electrode, the semiconductor layer that links the source electrode and drain electrode is made of a metal oxide. The semiconductor layer includes three regions of first, second, and third regions. The first region is connected with the source electrode, the third region is connected with the drain electrode, and the second region is connected between the first region and third region. The resistivities of the three regions have the relationship of the first region>the second region>the third region.

Abstract: The present invention in a first aspect proposes a semiconductor structure with a crack stop structure. The semiconductor structure includes a matrix, an integrated circuit and a scribe line. The matrix includes a scribe line region and a circuit region. The integrated circuit is disposed within the circuit region. The scribe line is disposed within the scribe line region and includes a crack stop trench which is disposed in the matrix and adjacent to the circuit region. The crack stop trench is parallel with one side of the circuit region and filled with a composite material in the form of a grid to form a crack stop structure.

Abstract: Reading margin is improved in a MTJ designed for MRAM applications by employing a pinned layer with an AP2/Ru/AP1 configuration wherein the AP1 layer is a CoFeB/CoFe composite and by forming a MgO tunnel barrier adjacent to the CoFe AP1 layer by a sequence that involves depositing and oxidizing a first Mg layer with a radical oxidation (ROX) process, depositing and oxidizing a second Mg layer with a ROX method, and depositing a third Mg layer on the oxidized second Mg layer. The third Mg layer becomes oxidized during a subsequent anneal. MTJ performance may be further improved by selecting a composite free layer having a Fe/NiFeHf or CoFe/Fe/NiFeHf configuration where the NiFeHf layer adjoins a capping layer in a bottom spin valve configuration. As a result, read margin is optimized simultaneously with improved MR ratio, a reduction in bit line switching current, and a lower number of shorted bits.

Abstract: A thin film transistor (TFT) array structure for a liquid crystal display (LCD) includes a panel, a first conductive layer, a middle layer, a second conductive layer, a passivation layer, and a black electrode layer. The first conductive layer is formed on the panel using filming technologies and a first photo-mask process. The middle layer is deposited and formed on the first conductive layer using a second photo-mask process. The second conductive layer is formed on the middle layer using a third photo-mask process and a first etching operation. The passivation layer is deposited and formed on the middle layer and the second conductive layer using a forth photo-mask process and a second etching operation. The black electrode layer formed on the passivation layer. The TFT array structure and the manufacturing method of the present disclosure reduce the consumption of the voltage and improve the display effect of the LCD.

Abstract: A display substrate includes a data line, a gate line and a fan-out line. The data line is disposed in a display area of a base substrate and transfers a data signal to a switching element electrically connected to a pixel electrode. The gate line is disposed in the display area and transfers a gate signal to the switching element. The fan-out line is disposed in a peripheral area of the base substrate surrounding the display area, electrically connected to at least one of the data line and the gate line, and includes a plurality of conductive layers making contact with each other through a contact hole.

Abstract: Disclosed herein is a method for manufacturing an active array substrate. The method includes the steps of: forming a first patterned metal layer on a substrate; sequentially forming a semiconductor layer, an insulating layer and a second metal layer to cover the first patterned metal layer; forming a patterned photoresist layer on the second metal layer; patterning the second metal layer, the insulating layer and the semiconductor layer to form a second patterned metal layer, a patterned insulating layer and a patterned semiconductor layer, and removing a portion of the patterned photoresist layer; heating the remained portion of the patterned photoresist layer such that the remained portion is fluidized and transformed into a protective layer; and forming a pixel electrode.

Abstract: A transistor may include a light-blocking layer that blocks light incident on a channel layer. The light-blocking layer may include a carbon-based material. The carbon-based material may include graphene oxide, graphite oxide, graphene or carbon nanotube (CNT). The light-blocking layer may be between a gate and at least one of the channel layer, a source and a drain.

Abstract: The invention provides a thin film transistor substrate and a display device including the same. The thin film transistor substrate includes: a substrate; a gate line, a gate insulating layer and an active layer sequentially formed on the substrate; a source and a drain simultaneously formed on the active layer to from a thin film transistor; an insulation layer formed on the thin film transistor, wherein a via is formed in the insulation layer, and the via is formed on a portion of the drain and a portion of the active layer to expose the portion of the drain and the active layer; and a pixel electrode formed in the via and on the insulation layer, wherein the pixel electrode is electrically connected to the drain through the via.