Abstract: According to one embodiment, a nitride semiconductor device includes a foundation layer, a first stacked intermediate layer, and a functional layer. The foundation layer includes an AlN buffer layer formed on a substrate. The first stacked intermediate layer is provided on the foundation layer. The first stacked intermediate layer includes a first AlN intermediate layer provided on the foundation layer, a first AlGaN intermediate layer provided on the first AlN intermediate layer, and a first GaN intermediate layer provided on the first AlGaN intermediate layer. The functional layer is provided on the first stacked intermediate layer. The first AlGaN intermediate layer includes a first step layer in contact with the first AlN intermediate layer. An Al composition ratio in the first step layer decreases stepwise in a stacking direction from the first AlN intermediate layer toward the first step layer.

Abstract: According to one embodiment, a light emitting device includes a first lead, a light emitting element, a second lead and a molded body. The light emitting element is fixed on the first lead. The second lead is provided away from the first lead and electrically connected to the light emitting element via a metal wire. The, molded body made of a sealing resin covers the light emitting element, end portions of the first lead and the second lead, the light emitting element being fixed on the end portion of the first read, and the metal wire being bonded on the end portion of the second lead. The first groove is provided between first and second portions in a front surface of the second lead, the first portion being in contact with an outer edge of the molded body and the metal wire being bonded on the second portion.

Abstract: An apparatus includes an enhancement mode transistor having multiple Group III-V layers above a substrate and a gate above the Group III-V layers. The gate includes multiple layers of material that form at least a portion of a thyristor. The multiple layers of material may include a first p-type layer of material, an n-type layer of material on the first p-type layer, and a second p-type layer of material on the n-type layer. The multiple layers of material may also include a p-type layer of material, an n-type layer of material on the p-type layer, and a Schottky metal layer on the n-type layer. The enhancement mode transistor may represent a high electron mobility transistor (HEMT) or a heterostructure field effect transistor (HFET).

Abstract: Solid state lighting (SSL) devices and methods are disclosed. A particular method includes forming an SSL formation structure having a CTE, selecting a first material of an interlayer structure to have a first material CTE greater than the substrate CTE, and selecting a second material based at least in part on the second material having a CTE less than the first material CTE. The intelayer structure is formed over the SSL formation structure e.g., with a first layer of the first material over the SSL formation structure, a portion of the second material over the first material, and a second layer of the first material over the second material. The CTE difference between the first and second materials can counteract a force placed on the formation structure by the first material. Particular formation structures can have an off-cut angle with a non-zero value of up to about 4.5 degrees.

Abstract: A GaN-based field effect transistor (MOSFET) is comprised of a channel layer comprised of p-type GaN, an electron supply layer, a surface layer having band gap energy smaller than that of said electron supply layer, sequentially laminated on a substrate, and recess section is formed by removing a part of the drift layer, the electron supply layer, and the surface layer down to a depth that reaches to the channel layer. A source electrode and a drain electrode are formed so that the recess section positions between them, a gate insulation film is formed on the surface layer and on inner-surface of the recess section including the channel layer, and a gate electrode is formed on the gate insulating film in the recess section.

Abstract: An LED structure includes a sapphire substrate, an epitaxy light emitting structure, a transparent conductive heat dissipation film, a first metal contact layer and a second metal contact layer. The transparent conductive heat dissipation film is electrically conductive and thermally radiative, and has a surface microscopic crystalline structure. The heat generated by the epitaxy light emitting structure is propagated by thermal radiation in a direction from the upper surface to the lower surface of the transparent conductive heat dissipation film. The transparent conductive heat dissipation film successfully replaces the transparent ITO (indium tin oxide) film to provide similar optical and electrical feature and performs fast heat dissipation by directive thermal radiation. The heat dissipation and efficiency of light emitting are greatly improved so as to prolong the lifetime of LED and final LED products.

Abstract: A light emitting diode (LED) includes a sapphire substrate, a first thermoradiation heat-dissipation layer, a second thermoradiation heat-dissipation layer, an epitaxy light emitting structure, a first metal contact layer and a second metal contact layer. The first and second thermoradiation heat-dissipation layers are fabricated from a mixture of metal and nonmetal, and are fabricated on the upper and lower surfaces of the sapphire substrate, respectively. The heat generated by the epitaxy light emitting structure propagates through the first and second thermoradiation heat-dissipation layers by directive thermal radiation. The efficiency of heat dissipation is improved to increase the efficiency of light emitting and prolong the lifespan of LED and LED products.

Abstract: Elements of an edge termination structure, such as multiple concentric guard rings, are effectively doped regions in a drift layer. To increase the depth of these doped regions, individual recesses may be formed in a surface of the drift layer where the elements of the edge termination structure are to be formed. Once the recesses are formed in the drift layer, these areas about and at the bottom of the recesses are doped to form the respective edge termination elements.

Abstract: The present disclosure generally relates to a Schottky diode that has a substrate, a drift layer provided over the substrate, and a Schottky layer provided over an active region of the substrate. A junction barrier array is provided in the drift layer just below the Schottky layer. The elements of the junction barrier array are generally doped regions in the drift layer. To increase the depth of these doped regions, individual recesses may be formed in the surface of the drift layer where the elements of the junction barrier array are to be formed. Once the recesses are formed in the drift layer, areas about and at the bottom of the recesses are doped to form the respective elements of the junction barrier array.

Abstract: Embodiments of the present disclosure includes a III-N device having a substrate layer, a first III-N material layer on one side of the substrate layer, a second III-N material layer on the first III-N material layer, and a barrier layer disposed on another side of the substrate layer, the barrier layer being less electrically conductive than the substrate layer.

Abstract: A semiconductor device according to the present embodiment includes a semiconductor substrate having a first n-type silicon carbide layer and a second n-type silicon carbide layer, a first p-type impurity region formed in the n-type silicon carbide layer, a first n-type impurity region of 4H—SiC structure formed in the n-type silicon carbide layer, a second n-type impurity region of 3C—SiC structure formed in the n-type silicon carbide layer having a depth shallower than the first n-type impurity region, a gate insulating film, a gate electrode formed on the gate insulating film, and a metallic silicide layer formed above the first n-type impurity region and having a bottom portion and a side surface portion such that the second n-type impurity region is sandwiched between the first n-type impurity region and at least the side surface portion.

Abstract: Disclosed is a semiconductor device including: a first electrode formed of a conductive material; a p-type first silicon carbide (SiC) semiconductor section and an n-type second SiC semiconductor section 230, connected to the first electrode, containing carbon (C) such that a surface density distribution has a peak at a first interface with the first electrode.

Abstract: A semiconductor device according to an embodiment includes a silicon carbide, a metal silicide formed on the silicon carbide and including a first layer and a second layer having a carbon ratio lower than that of the first layer, and a metallic electrode formed on the metal silicide, wherein the second layer is formed on the first layer, and the second layer is in contact with the metallic electrode, and an average grain diameter of a metal silicide in the second layer is larger than an average grain diameter of a metal silicide in the first layer.

Abstract: Disclosed is a semiconductor device including: a semiconductor substrate; a field effect transistor formed on the semiconductor substrate; and a diode forming area adjacent to a forming area of the field effect transistor, wherein the diode forming area is insulated from the forming area of the field effect transistor on the semiconductor substrate, the diode forming area includes an anode electrode and a cathode electrode arranged side by side in a multi-finger shape, and the anode electrode and the cathode electrode are formed in a direction different from directions of a gate electrode, a source electrode, and a drain electrode of the field effect transistor arranged side by side in a multi-finger shape.

Abstract: Disclosed is a power semiconductor module which includes a unipolar type switching device using a wide bandgap semiconductor (wide bandgap semiconductor switching device) and an insulated gate bipolar transistor using a silicon semiconductor (Si-IGBT) connected in parallel, in which a chip area of the wide bandgap semiconductor switching device is smaller than that of the Si-IGBT.

Abstract: Stress regulated semiconductor devices and associated methods are provided. In one aspect, for example, a stress regulated semiconductor device can include a semiconductor layer, a stress regulating interface layer including a carbon layer formed on the semiconductor layer, and a heat spreader coupled to the carbon layer opposite the semiconductor layer. The stress regulating interface layer is operable to reduce the coefficient of thermal expansion difference between the semiconductor layer and the heat spreader to less than or equal to about 10 ppm/° C.

Abstract: A method for the epitaxial growth of SiC is described which includes contacting a surface of a substrate with hydrogen and HCl, subsequently increasing the temperature of the substrate to at least 1550° C. and epitaxially growing SiC on the surface of the substrate. A method for the epitaxial growth of SiC is also described which includes heating a substrate to a temperature of at least 1550° C., contacting a surface of the substrate with a C containing gas and a Si containing gas at a C/Si ratio of 0.5-0.8 to form a SiC buffer layer and subsequently contacting the surface with a C containing gas and a Si containing gas at a C/Si ratio >0.8 to form a SiC epitaxial layer on the SiC buffer layer. The method results in silicon carbide epitaxial layers with improved surface morphology.

Abstract: A substrate is provided with a main surface having an off angle of 5° or smaller relative to a reference plane. The reference plane is a {000-1} plane in the case of hexagonal system and is a {111} plane in the case of cubic system. A silicon carbide layer is epitaxially formed on the main surface of the substrate. The silicon carbide layer is provided with a trench having first and second side walls opposite to each other. Each of the first and second side walls includes a channel region. Further, each of the first and second side walls substantially includes one of a {0-33-8} plane and a {01-1-4} plane in the case of the hexagonal system and substantially includes a {100} plane in the case of the cubic system.

Abstract: A system and method for packaging light emitting semiconductors (LESs) is disclosed. An LES device is provided that includes a heatsink and an array of LES chips mounted on the heatsink and electrically connected thereto, with each LES chip comprising connection pads and a light emitting area configured to emit light therefrom responsive to a received electrical power. The LES device also includes a flexible interconnect structure positioned on and electrically connected to each LES chip to provide for controlLES operation of the array of LES chips, with the flexible interconnect structure further including a flexible dielectric film configured to conform to a shape of the heatsink and a metal interconnect structure formed on the flexible dielectric film and that extends through vias formed in the flexible dielectric film so as to be electrically connected to the connection pads of the LES chips.

Abstract: A light emitting module includes a carrier unit, a substrate unit, and a light emitting unit. The carrier unit includes at least one carrier body, and the carrier body has a mounting portion. The substrate unit includes at least one bendable substrate. The bendable substrate includes a plurality of substrate portions and a plurality of bending portions, the substrate portions are disposed on the mounting portion of the carrier body, and each bending portion is disposed between every two corresponding substrate portions. The light emitting unit includes a plurality of light emitting groups respectively disposed on the substrate portions, and each light emitting group includes at least one light emitting element electrically connected to each corresponding substrate portion. Because the substrate portions can be disposed on different planes after bending the substrate portions, thus light sources respectively generated by the light emitting elements can be projected toward different directions.

Abstract: Disclosed are a light emitting device package and a lighting system in which the light emitting device package includes a first cavity in a first region of the body, a second cavity in a second region of the body, first and second lead frames spaced apart from each other in the first cavity, a third lead frame spaced apart from the second lead frame in the second cavity, a first light emitting device on the first and second lead frames in the first cavity, a second light emitting device on the second and third lead frames in the second cavity, and a molding member in the first and second cavities.

Abstract: A light emitting array comprises a submount having a top surface and a bottom surface, and at least one LED at least partially embedded within the submount. The top surface of the submount is in contact with at least a side surface of the at least one LED. The submount may include one or more parallel layers. An optical layer may be covering the at least one LED in such a way that light emitted from the at least one LED passes through the optical layer.

Abstract: A solid state light source array including a transparent substrate and N rows of solid state light emitting element series is provided. Each row of the solid state light emitting element series includes M solid state light emitting elements connected in series, wherein N, M are integrals and N?1, M?2. Each of the solid state emitting elements includes a first type electrode pad and a second type electrode pad. The first and the Mth solid state emitting elements of each row of the solid state light emitting element series are electrically connected to a first conductive line and a second conductive line located on the edges of the first surface via the first type electrode pad and the second type electrode pad, respectively. The first conductive line and the second conductive line are physically disconnected.

Abstract: A display includes: a first region including first pixels configured of a single color; a second region including second pixels configured of a plurality of colors different from the single color, the second pixels having an organic layer including a common light emitting layer; and a dividing wall separating the first region from the second region.

Abstract: An LED device comprises a substrate, a circuit, two LED dies, a dam and a reflector. The dam divides the substrate into a first area and a second area, wherein one of the two LED dies is disposed on the first area and the other is disposed on the second area. The dam insulates radiant lights emitted from the two LED dies, whereby interference between the radiant lights can be prevented. Four separate electrodes are provided on the substrate, wherein one LED die is connected to two electrodes and the other LED die is electrically connected to the other two electrodes.

Abstract: The efficiency and color contrast of a lighting device may be improved by using wavelength shifting material, such as a phosphor, to absorb less desired wavelengths and transmit more desired wavelengths. A double-notch reflective filter may pass desired wavelengths such as red and green, while returning or reflecting less desired wavelengths (blue and yellow) away from an optical exit back toward wavelength shifting material and re-emitted as light of more desirable wavelengths.

Abstract: A semiconductor light emitting device has a semiconductor laminate including first and second conductivity type semiconductor layers respectively providing first and second main surfaces and an active layer. The semiconductor laminate is divided into first and second regions. At least one contact hole is formed to pass through the active layer from the second main surface of the first region. A first electrode is formed on the second main surface to be connected to the first conductivity type semiconductor layer of the first region and the second conductivity type semiconductor layer of the second region. A second electrode is formed on the second main surface of the first region to be connected to the second conductivity type semiconductor layer of the first region and the first conductivity type semiconductor layer of the second region.

Abstract: A method for fabricating a light emitting diode (LED) device includes the steps of forming (or providing) a plurality of LED dice, forming a plurality of wavelength conversions layers, and then evaluating at least one electromagnetic radiation emission characteristic of each LED die and at least one color characteristic of each wavelength conversion layer. The method also includes the steps of comparing the evaluated characteristic of each LED die and the evaluated characteristic of each wavelength conversion layer to a database, selecting a selected LED die and a selected wavelength conversion layer based on the evaluating and comparing steps, and then attaching the selected wavelength conversion layer to the selected LED die.

Abstract: A light emitting diode (LED) package includes a substrate and a light emitting diode (LED) die on the substrate configured to emit electromagnetic radiation in a first spectral region. The (LED) package also includes a dielectric layer on the (LED) die and a wavelength conversion member on the dielectric layer configured to convert the electromagnetic radiation in the first spectral region to electromagnetic radiation in a second spectral region. The (LED) package also includes an interconnect comprising a conductive trace on the wavelength conversion member and on the dielectric layer in electrical contact with a die contact on the (LED) die and with a conductor on the substrate, and a transparent dome configured as a lens encapsulating the (LED) die.

Abstract: A LED lamp is disclosed which has a plurality of light unit, each of the light unit has at least one flat metal lead for heat dissipation and the lower part of the metal lead is mounted on a heat sink for a further heat dissipation.

Abstract: An LED package device comprises a substrate, a first electrode, a second electrode, a reflector, an encapsulation layer and an LED die. The substrate includes a top surface and a bottom surface opposite to the top surface, wherein the first and the second electrodes are located on the top surface of the substrate. A sum of the areas of the first and the second electrodes on the top surface is smaller than ¼-? the area of the top surface. Therefore, an increased contacting area between the reflector and the substrate is formed to enhance the tightness of the LED package device.

Abstract: According to one embodiment, a light emitting device includes: a first lead, a recess being provided in the first lead; a light emitting element fixed to a bottom surface of the recess via a conductive paste at a back surface on an opposite side to a light emitting surface of the light emitting element; and a second lead disposed away from the first lead and electrically connected to the light emitting element via a metal wire. An area of the bottom surface is larger than an area of the light emitting surface. The paste is put in with a thickness sufficient to cover at least part of a side surface in contact with the light emitting surface and the back surface of the light emitting element and at least part of a wall surface of the recess in the recess.

Abstract: According to one embodiment, a method for manufacturing a semiconductor light emitting device includes: preparing a metal plate including first and second frames, the first frames being disposed alternately with the second frames to be apart from the second frames, a light emitting element being affixed to each of the first frames and connected via a metal wire to an adjacent second frame; forming a first resin on a first major surface of the metal plate to cover the first and second frames, and the light emitting elements; making a trench from a second major surface side; and filling a second resin into an interior of the trench from the first major surface side. The method further includes forming the resin packages by dividing the second resin along the trench, an outer edge of the first resin being covered with the second resin.

Abstract: Embodiments provide a light emitting device comprising a support member, a light emitting structure disposed on the support member, the light emitting structure comprising a first semiconductor layer comprises a first and second regions, a second semiconductor layer disposed on the second region, and an active layer between the first and second semiconductor layers, a first electrode disposed on the first semiconductor layer and a second electrode disposed on the second semiconductor layer, wherein the support member includes metal ions to convert light of a first wavelength emitted from the active layer into light of a second wavelength different from the first wavelength.

Abstract: A system for fabricating light emitting diode (LED) dice includes a wavelength conversion layer contained on a substrate on an adhesive layer configured to have reduced adhesiveness upon exposure to a physical energy, such as electromagnetic radiation or heat. The system also includes a curing apparatus configured to reduce the adhesiveness of the adhesive layer to facilitate removal of the wavelength conversion layer from the substrate, and an attachment apparatus configured to remove the wavelength conversion layer from the substrate and to attach the wavelength conversion layer to a light emitting diode (LED) die. A method for fabricating light emitting diode (LED) dice includes the steps of exposing the adhesive layer on the substrate to the physical energy to reduce the adhesiveness of the adhesive layer, removing the wavelength conversion layer from the substrate, and attaching the wavelength conversion layer to the light emitting diode (LED) die.

Abstract: Light-emitting devices and associated methods are provided. The light emitting devices can have a wavelength converting material-coated emission surface.

Abstract: A light-emitting device includes: a light-emitting element that generates ultraviolet light; a first wavelength conversion layer placed on the light-emitting element, the first wavelength conversion layer including a plurality of types of phosphor particles dispersed in a transparent resin, each of the plurality of types of phosphor particles converting the ultraviolet light into light having a longer wavelength; and a second wavelength conversion layer placed on at least a part of the first wavelength conversion layer, the second wavelength conversion layer including at least any of the plurality types of phosphor particles dispersed in a transparent resin.

Abstract: Disclosed is a light-emitting device having a wide luminous-intensity distribution characteristic with a simple structure. The light-emitting device includes a resin package in which an LED chip, a first inner portion of a first lead terminal, and a second inner portion of a second lead terminal are accommodated and which has a second recess portion formed so that a portion including a first recess portion of the first inner portion of the first lead terminal as well as a portion of the second inner portion of the second lead terminal are exposed to a bottom portion of the second recess portion, and a resin portion containing phosphors and filled in the first recess portion of the first lead terminal and in the second recess portion of the resin package. A photoreflective filler is contained in a region opposed to the LED chip of the resin portion including the phosphors.

Abstract: The present disclosure provides a light emitting diode (LED) package, which includes a first substrate with electrodes disposed on a top thereof and a second substrate with an LED chip disposed on a top thereof. The LED chip is connected with the electrodes via wires. A first package layer is disposed on the top of the first substrate to cover the wires and electrodes. A fluorescent layer is disposed on the top of the second substrate to cover the LED chip. The present disclosure also provides a mold and a method of manufacturing the LED package.

Abstract: A semiconductor light emitting device is mounted on a support substrate. The support substrate is disposed in an opening in a carrier. In some embodiments, the support substrate is a ceramic tile and the carrier is a low cost material with a lateral extent large enough to support a lens molded over or attached to the carrier.

Abstract: Disclosed herein are LED devices having lenses and methods of making the devices. The LED devices are made using an optical layer comprising a plurality of lens features. The optical layer is disposed relative to the LED die such that at least one LED die is optically coupled to at least one lens feature. A lens can then be made from the lens feature and excess optical layer removed to provide the device.

Abstract: A method for forming a light emitting device includes providing a light emitting diode (LED) configured to emit light of a first color and providing a plurality of semi-spherical lenses made of a silicone material that contains no phosphor material. Each of the lenses has a layer of phosphor material attached thereto. The method also includes testing the plurality of lenses to select a subset of lenses that converts light of the first color to light of a second color. The method further includes forming the light emitting device using the LED, one of the selected subset of lenses, and a heat conductive substrate. In an embodiment, after the testing of the plurality of lenses, one of the selected subset of lenses is disposed overlying the LED. In another embodiment, the testing of the plurality of lenses is conducted with a light source other than the LED.

Abstract: Disclosed is a novel light extraction sheet which not only improves light extraction efficiency but suppresses color change with the angle of observation, an organic EL dement employing this light extraction sheet, and art illumination device employing the element. The light extraction sheet is featured in that it comprises a transparent resin film and provided thereon, a light scatter layer containing a binder resin and light scattering particles with an average particle size of front 0.2 to 1.0 ?m dispersed in the binder resin and a concavo-convex layer containing a binder resin and spherical particles with an. average particle size of from 3 to 10 ?m.

Abstract: A package for a light source, a semiconductor device, and methods of manufacturing the same are disclosed. In particular, a Light Emitting Diode (LED) dice is attached to a bonding pad of the light source package by two discrete types of different adhesives. One of the adhesives may be curable under exposure to Ultraviolet (UV) light and the other adhesive may be cured under thermal radiation, but is stable when exposed to UV light.

Abstract: A thermally enhanced optical package includes a heat conducting module configured to dissipate the heat generated from an optical device, a plurality of insulating pads disposed on a heat conducting substrate, and at least one electrical conducting pad disposed on the insulating pads. The heat conducting module includes a heat conducting substrate and a plurality of heat conducting pillars, and the optical device is a light emitting diode chip or a light emitting diode die in the present embodiments. The thermally enhanced optical package is further characterized in a simple manufacturing procedure, including substantially an electrical or electroless plating process, a metal foil laminating process, a thick film printing process, and a patterning and etching process.

Abstract: A light-emitting diode structure is disclosed. A substrate has a first semiconductor layer, a light-emitting layer and a second semiconductor layer formed thereon. The first and second semiconductor layers are of opposite conductivity types. A first contact electrode is disposed between the first semiconductor layer and the substrate, and has a protruding portion extending into the second semiconductor layer. A barrier layer is conformally formed on the first contact electrode and exposes a top surface of the protruding portion. A current blocking member is disposed on the barrier layer and around at least a sidewall of the protruding portion. A second contact electrode is disposed between the first semiconductor layer and the first contact electrode, and in direct contact with the first semiconductor layer, wherein the second contact electrode is electrically insulated from the first contact electrode by the barrier layer.

Abstract: A light-emitting device comprises a substrate, a light-emitting layer, a wire formed on the substrate and supplying electric power to the light-emitting layer; a transition metal oxide layer formed on the substrate and over the wire; a bank formed on the transition metal oxide layer defining an opening over the wire; an interception layer formed on a portion of the transition metal oxide layer that is exposed through the opening and intercepting migrating fluorine; an organic layer formed on the interception layer and doped with an alkali metal; and an electrode formed on the organic layer, electrically connected to the wire via the organic layer, the interception layer, and the transition metal oxide layer, and providing the electric power supplied by the wire to the organic layer.

Abstract: An organic light emitting diode display includes: a base film made of plastic; a thin film transistor and an organic light emitting diode formed on the base film; and a carbon nanotube thin film disposed among the base film, the thin film transistor, and the organic light emitting diode.

Abstract: A group 13 nitride crystal has a hexagonal crystal structure and at least contains nitrogen atom and at least a kind of metal atoms selected from a group consisting of B, Al, Ga, In, and Tl. The group 13 nitride crystal includes a first region located at an inner side of a cross section intersecting a c-axis, and a second region surrounding at least a part of an outer periphery of the first region, having a thickness larger than a maximum diameter of the first region, and having a carrier density higher than that of the first region.

Abstract: An integrated circuit device includes a semiconductor substrate and a first transistor and a second transistor constructed in the semiconductor substrate. The first transistor has a first operating voltage higher than a second operating voltage of a second transistor. The first transistor includes a first drain structure, a first source structure, an isolation structure and a first gate structure. The first source structure includes a high voltage first-polarity well region, a first-polarity body region, a heavily doped first-polarity region, a second-polarity grade region and a heavily doped second-polarity region. The heavily doped second-polarity region is surrounded by the second-polarity grade region. The second-polarity grade region is surrounded by the first-polarity body region. The second transistor includes a second drain structure, a second source structure, a second gate structure and a first-polarity drift region.