Abstract: An aluminate-based fluorescent powder coated by metal nanoparticles. The formula thereof is (Y1-xTbx)3(Al1-yGay)5O12@zM, in which 0<x?1.0, 0?y?1.0, @ means coating, M is metal nanoparticles, z is mole ratio of metal nanoparticles to aluminate-based fluorescent powder and 0<z?0.01. A method for producing the aluminate-based fluorescent powder coated by metal nanoparticles is also provided.

Abstract: Fluorescent materials used in field emission and preparation methods thereof are provided. The said fluorescent materials are a mixture consisting of Zn1-xAlxO, europium yttrium oxide or terbium yttrium oxide, wherein 0<x?0.05. The said methods include the following steps: step 1, preparing Zn1-xAlxO, wherein 0<x?0.05; step 2, weighing yttrium oxide or yttrium oxalate and europium oxide or terbium oxide or oxalate thereof, grinding to form a mixture; step 3, mixing Zn1-xAlxO with the mixture in step 2, stirring, drying to form a mixture; step 4, calcining the mixture in step 3 to form the said fluorescent material used in field emission. The fluorescent materials increase luminescent intensity and the said preparation methods have simple technique, low equipment requirement and short preparation cycle.

Abstract: Described herein are devices, compositions, and methods for improving color discernment.

Abstract: A population of light-emissive nitride nanoparticles has a photoluminescence quantum yield of at least 10% and an emission spectrum having a full width at half maximum intensity (FWHM) of less than 100 nm. One suitable method of producing light-emissive nitride nanoparticles comprises a first stage of heating a reaction mixture consisting essentially of nanoparticle precursors in a solvent, the nanoparticle precursors including at least one metal-containing precursor and at least one first nitrogen-containing precursor, and maintaining the reaction mixture at a temperature to seed nanoparticle growth. It further comprises a second stage of adding at least one second nitrogen-containing precursor to the reaction mixture thereby to promote nanoparticle growth.

Abstract: This disclosure relates to a method of recovering and concentrating an aqueous N-methylmorpholine-N-oxide (NMMO) solution.

Abstract: Ion transport membrane oxidation system comprising (a) two or more membrane oxidation stages, each stage comprising a reactant zone, an oxidant zone, one or more ion transport membranes separating the reactant zone from the oxidant zone, a reactant gas inlet region, a reactant gas outlet region, an oxidant gas inlet region, and an oxidant gas outlet region; (b) an interstage reactant gas flow path disposed between each pair of membrane oxidation stages and adapted to place the reactant gas outlet region of a first stage of the pair in flow communication with the reactant gas inlet region of a second stage of the pair; and (c) one or more reactant interstage feed gas lines, each line being in flow communication with any interstage reactant gas flow path or with the reactant zone of any membrane oxidation stage receiving interstage reactant gas.

Abstract: A biodegradable acid cleaning composition for cleaning stainless steel, and other surfaces is disclosed. The composition comprises urea sulfate in combination with gluconic acid which serves as a corrosion inhibitor. The composition retains the cleaning and corrosion prevention properties of similar phosphoric acid solutions but is safe for the environment and is less expensive to produce. Applicants have surprisingly found that the traditionally alkaline corrosion inhibitor, gluconic acid, can work effectively in an acidic cleaning composition.

Abstract: The invention provides a protein-free solution for cell cryopreservation, which comprises 1-23 w/v % of cell membrane protectant, 1.0-16 w/v % of permeable intracellular protectant, 3.0-28 w/v % of cell sedimentation stabilizer, and the balance of pH buffer solution. The cell cryopreservation solution of the invention consists of chemical substances only, without any protein content. The components are stable and controllable. The cell cryopreservation solution has long shelf life, high stability between different batches and good protection of cells, and has no effect on the characteristics, normal growth and differentiation of cells; besides, the recovery rate of the cells cryopreserved by the cell cryopreservation solution is high.

Abstract: The present invention provides a novel compound that makes it possible to improve ionization efficiency of hydrophobic peptide. 5-alkoxy-2- or -3-hydroxybenzoic acid represented by the following formula (I): where R is an alkyl group having 6 to 10 carbon atoms and the substituted carboxyl group and hydroxyl group are ortho or meta to each other. A matrix additive for mass spectrometry, which is represented by the above formula (I). The above additive which is added to a matrix for mass spectrometry selected from the group consisting of ?-cyano-4-hydroxycinnamic acid, 2,5-dihydroxybenzoic acid, sinapic acid, and 1,5-diaminonaphthalene. The above additive which is used for mass spectrometry of a hydrophobic peptide.

Abstract: A method for preparing electrode active material slurry including: mixing a conductive agent and a first thickener with a low molecular weight to primarily disperse the mixture; and mixing an active material and a second thickener with a higher molecular weight than the first thickener in the primary dispersion to secondarily disperse the mixture, and an electrochemical capacitor comprising an electrode using electrode active material slurry prepared by the method. It is possible to prepare a low resistance and high capacity electrochemical capacitor by selectively using at least two thickeners with different degrees of polymerization and molecular weights to remarkably improve dispersibility of an active material and a conductive agent. Particularly, it is possible to reduce resistance based on an electrochemical capacitor with the same capacity.

Abstract: A copper-carbon composition including copper chemically bonded to carbon, wherein the copper and the carbon form a single phase material formed by mixing carbon into molten copper. The single phase material characterized in that it is meltable and that the carbon does not phase separate from the copper when the single phase material is heated to a temperature that melts the copper-carbon composition.

Abstract: Objects of the present invention include creating cathode materials that have high energy density and are cost-effective, environmentally benign, and are able to be charged and discharged at high rates for a large number of cycles over a period of years. One embodiment is a battery material comprised of a doped nanocomposite. The doped nanocomposite may be comprised of Li—Co—PO4; C; and at least one X, where said X is a metal for substituting or doping into LiCoPO4. In certain embodiments, the doped nanocomposite may be LiCoMnPO4/C. Another embodiment of the present invention is a method of creating a battery material comprising the steps of high energy ball milling particles to create complex particles, and sintering said complex particles to create a nanocomposite. The high energy ball milling may dope and composite the particles to create the complex particles.

Abstract: Disclosed is a carbon nanotube powder, including a carbon nanotube averagely mixed with a dispersant, wherein the carbon nanotube and the dispersant have a weight ratio of 30:70 to 90:10. The carbon nanotube has a diameter of 10 nm to 100 nm, and a length/diameter ratio of 100:1 to 5000:1. The dispersant is an alternative copolymer, a block copolymer, or a random copolymer polymerized of a solvation segment (A) and a carbon affinity group (B). The carbon nanotube powder can be blended with a thermoplastic material to form a composite, wherein the carbon nanotube and the composite have a weight ratio of 0.5:100 to 50:100.

Abstract: Metal imide compounds as anode materials for lithium batteries and galvanic elements with a high storage capacity. Metal imide compounds as highly capacitive anode materials for lithium batteries. The invention relates to a galvanic element, an anode material for use in a galvanic element and method for producing an active electrode material.

Abstract: Disclosed herein are compatibilized polyamide-poly(arylene ether) thermoplastic resin compositions, comprising: (a) about 10 to about 50 weight percent of a poly(arylene ether); (b) about 5 percent to about 20 percent of a hydrogenated block copolymer of an alkenyl aromatic compound and a conjugated diene and a copolymer of ethylene; (c) about 30 to about 60 percent of a biopolyamide; and wherein all weight percents are based on the total weight of the composition; and wherein the biomass carbon content of the resin composition is at least 13 percent as measured by ASTM D6866. Also disclosed are methods for making such resins and articles derived therefrom.

Abstract: A carbon nanotube suspension includes a plurality of carbon nanotubes and a block copolymer dispersant which are evenly distributed in a solvent, wherein the block copolymer includes a hydrophobic block and a functional group block, such that the carbon nanotubes react with the functional group block to form covalent bonds directly without undergoing chemical modification. The carbon nanotube suspension is effective in preparing a superhydrophobic film without undergoing chemical modification or the presence of a fluorine-containing compound. The superhydrophobic film thus prepared is of a tough stable structure and remains superhydrophobic when subjected to lengthy immersion treatment, exposure to a strong acid-base environment, or physical abrasion and polishing.

Abstract: There are provided a dielectric composition, a method of fabricating the same, and a multilayer ceramic electronic component using the same. The dielectric composition includes a perovskite powder particle having a surface on which a doping layer is formed, the doping layer being doped with at least one material selected from a group consisting of alkaline earth elements and boron group elements, and rare earth elements. When a perovskite powder particle is synthesized by using a hydrothermal synthesis method, a doping layer doped with at least one material selected from the group consisting of alkaline earth elements and boron group elements and rare earth elements is formed on a surface of the perovskite powder particle, such that a dielectric composition having excellent reliability, dielectric properties, and electric properties can be fabricated.

Abstract: Apparatuses and systems for emulating electrical characteristics of a material having a known dielectric constant or property are disclosed for standardizing and calibrating of electromagnetic devices. The emulator apparatus can include an electrically non-conductive layer having a dielectric constant less than the material dielectric constant and an electrically conductive layer adjacent the non-conductive layer. Artificial dielectrics for emulating the dielectric constant of a material are also disclosed including a substrate matrix having a dielectric constant less than the material dielectric constant and an additive combined with the substrate, the additive having a dielectric constant higher than the material dielectric constant. Artificial dielectrics may simulate the frequency response of a material relating to a specific property.

Abstract: A composition that contains nickel oxyhydroxide, nickel metal, ruthenium oxide (Ru02) and a binder is prepared as the cathode for a nickel-zinc battery. Metal oxide or hydroxide with a rare earth oxide may be included in the cathode to improve the electrode capacity and shelf life. Optionally, zinc oxide is added to the cathode to facilitate charger transfer and improve the characteristics of high rate discharging. The cathode significantly increases the charging efficiency, promotes the overpotential of oxygen evolution, and intensifies the depth of discharging, thereby increasing the overall efficiency and lifespan of the battery.

Abstract: The present invention relates to novel formulations comprising an organic semiconductor (OSC) and one or more organic solvents. The formulation comprises a dimethyl anisole solvent. Furthermore, the present invention describes the use of these formulations as inks for the preparation of organic electronic (OE) devices, especially organic photovoltaic (OPV) cells and OLED devices, to methods for preparing OE devices using the novel formulations, and to OE devices, OLED devices and OPV cells prepared from such methods and formulations.

Abstract: A mixed metal oxide having the formula xLi2MnO3.(1?x)LiMO2 formed efficiently and in a reduced number of steps by at least partially drying an aqueous metal hydroxide mixture to form a mixed metal precursor, and then reacting the mixed metal precursor to form the mixed metal oxide. The aqueous metal hydroxide mixture includes lithium, manganese, and one or more additional metals in stoichiometric proportions indicated by the formula xLi2MnO3.(1?x)LiMO2, where 0<x<1 and M represents manganese and the one or more additional metals. In some cases, the aqueous metal hydroxide mixture is formed by preparing an aqueous metal salt solution including lithium, manganese, and the one or more additional metals in stoichiometric proportions indicated by the formula xLi2MnO3.(1?x)LiMO2, and combining the aqueous metal salt solution with ammonium hydroxide to form the aqueous metal hydroxide mixture.

Abstract: A pipe flange spreading tool is disclosed. The pipe flange spreading tool includes a pair of wedges and a retainer strap. Each of the wedges has a tapered end, and the tapered end is configured to be forced between two pipe flanges of a pipeline to separate the pipe flanges of the pipeline. The retainer strap connects the pair of wedges. The retainer strap is configured to be looped around the pipeline to retain the pair of wedges with respect to the pipeline during operation.

Abstract: An active security system with a rotating spoke and hub apparatus with razor wire, barbed wire or other types of sharp objects affixed to the spokes that is free standing or on top of an existing fence or wall and mounted to stationary columns. A motor and linkage provide for the active rotation of the rotating spoke and hub structure. The motor is activated by sensors that detect a presence of an intruder.

Abstract: A portable safety rail system includes one or more railings inserted into one or more stackable rail bases. Each rail base can include a plurality of apertures for receiving end rail posts of railings through a raised hub defining an open region between the bottom of the hub and the surface on which the rail base rests. Each end rail post can have a stop flange that engages an upper surface of hub when inserted therein and an aperture through the end portion that extends into the open region beneath the hub for receiving a pin to lock the post while allowing rotation of the post. System can also include toe boards that are attached to railings with a mount having an aperture through which railings are extended, allowing the toe boards to also be rotated to be aligned with railings.

Abstract: This invention discloses a semiconductor device and its manufacturing method. According to the method, a stop layer is deposited on a step-shaped bottom electrode, and then a first insulating layer is deposited through a high aspect ratio process. A first chemical mechanical polishing is performed until the stop layer. A second chemical mechanical polishing is then performed to remove the upper horizontal portion of the bottom electrode. Then, a phase-change material can be formed on the vertical portion of the bottom electrode to form a phase-change element. Through arranging a stop layer, the chemical mechanical polishing process is divided into two stages. Thus, during the second chemical mechanical polishing process preformed on the bottom electrode, polishing process can be precisely controlled to avoid the unnecessary loss of the bottom electrode.

Abstract: In accordance with an embodiment of the present invention, a resistive switching device comprises a bottom electrode, a switching layer disposed over the bottom electrode, and a top electrode disposed over the switching layer. The top electrode comprises an alloy of a memory metal and an alloying element. The top electrode provides a source of the memory metal. The memory metal is configured to change a state of the switching layer.

Abstract: A nonvolatile semiconductor memory device has a first wire, a second wire, and a memory cell electrically coupled to the first wire at one end and to the second wire at the other end. The memory cell has a resistance change layer to store information by changing a resistance value and a first electrode and a second electrode coupled to both ends of the resistance change layer and not containing a precious metal. The first electrode includes an outside electrode and an interface electrode formed between the outside electrode and the resistance change layer. The thickness of the interface electrode is less than the thickness of the outside electrode. The resistivity of the interface electrode is higher than the resistivity of the outside electrode. The resistance value of the first electrode is lower than the resistance value of the resistance change layer in a low resistance state.

Abstract: A resistance change memory includes a first conductive line extending in a first direction, a second conductive line extending in a second direction which is crossed to the first direction, a cell unit including a memory element and a rectification connected in series between the first and second conductive lines, and a control circuit which is connected to both of the first and second conductive lines. The control circuit controls a value of voltage which is applied to the memory element to change a resistance of the memory element reversibly between first and second values. The rectification includes a p-type semiconductor layer, an n-type semiconductor layer and an intrinsic semiconductor layer therebetween. The rectification has a first diffusion prevention area in the intrinsic semiconductor layer.

Abstract: According to one embodiment, a method for manufacturing a nonvolatile storage device. The device includes a plurality of first conductive layers each extending in a first direction, a plurality of second conductive layers each extending in a second direction and spaced from the first layers, and memory cells each provided between the first layers and the second layers and including a rectifying element including a semiconductor layer, and a variable resistance element stacked with the rectifying element. The method includes a film formation step, a heating step and a patterning step. The film formation step is configured to form a rectifying element material film including an amorphous semiconductor film. The heating step is configured to heat the rectifying element material film. The patterning step is configured to form the rectifying element including the semiconductor layer by patterning the rectifying element material film after the heating step.

Abstract: A case including a case main body, a matrix including a semiconductor nanocrystal, the matrix disposed in the case main body, and a sealant disposed on the case main body, wherein the sealant has a gas permeability of about 1 cubic centimeter at standard temperature and pressure per centimeter per meter squared per day per atmosphere or less and a tensile strength of about 5 megaPascals or more, and wherein the semiconductor nanocrystal is a Group II-VI compound, a Group III-V compound, a Group IV-VI compound, a Group IV element, a Group IV element, a Group IV compound, or a combination thereof.

Abstract: A light emitting diode (LED) die includes a wavelength conversion layer having a base material, and a plurality of particles embedded in the base material including wavelength conversion particles, and reflective particles. A method for fabricating light emitting diode (LED) dice includes the steps of mixing the wavelength conversion particles in the base material to a first weight percentage, mixing the reflective particles in the base material to a second weight percentage, curing the base material to form a wavelength conversion layer having a selected thickness, and attaching the wavelength conversion layer to a die.

Abstract: Frontside-illuminated barrier infrared photodetector devices and methods of fabrication are disclosed. In one embodiment, a frontside-illuminated barrier infrared photodetector includes a transparent carrier substrate, and a plurality of pixels. Each pixel of the plurality of pixels includes an absorber layer, a barrier layer on the absorber layer, a collector layer on the barrier layer, and a backside electrical contact coupled to the absorber layer. Each pixel has a frontside and a backside. The absorber layer and the barrier layer are non-continuous across the plurality of pixels, and the barrier layer of each pixel is closer to a scene than the absorber layer of each pixel. A plurality of frontside common electrical contacts is coupled to the frontside of the plurality of pixels, wherein the frontside of the plurality of pixels and the plurality of frontside common electrical contacts are bonded to the transparent carrier substrate.

Abstract: A method is provided. The method includes forming a plurality of nanowires on a top surface of a substrate and forming an oxide layer adjacent to a bottom surface of each of the plurality of nanowires, wherein the oxide layer is to isolate each of the plurality of nanowires from the substrate.

Abstract: A photodiode according to example embodiments includes an anode, a cathode, and an intrinsic layer between the anode and the cathode. The intrinsic layer includes a P-type semiconductor and an N-type semiconductor, and composition ratios of the P-type semiconductor and the N-type semiconductor vary within the intrinsic layer depending on a distance of the intrinsic layer from one of the anode and the cathode.

Abstract: A display includes: a first light-emitting device disposed in a first region on a substrate and including a transfer organic layer; a second light-emitting device disposed in a second region adjacent to the first region on the substrate and not including a transfer organic layer; and a level difference provided between the first region and the second region, and being large enough to inhibit transfer of the transfer organic layer to the second region when the transfer organic layer is formed in the first region.

Abstract: A nitrogen-containing heteroaromatic compound is represented by the following formula (A). wherein Y is an oxygen atom or a sulfur atom, M is a substituted or unsubstituted nitrogen-containing heteroaromatic group, and Ar2 is a substituted aromatic hydrocarbon group having 6 to 18 ring carbon atoms, a substituted or unsubstituted monocyclic heteroaromatic group having 5 or 6 ring atoms, a dibenzofuran ring group that may be substituted with a substituent (excluding a 3-carbazolyl group and an N-carbazolyl group), a dibenzothiophene ring group that may be substituted with a substituent (excluding a 3-carbazolyl group and an N-carbazolyl group), or a nitrogen-containing polycyclic group among nitrogen-containing polycyclic groups respectively represented by the following formulas (1) to (5).

Abstract: Disclosed are new compounds having semiconducting properties. Such compounds can be processed in solution-phase at a temperature of less than about 50° C. into thin film semiconductors that exhibit high carrier mobility and/or good current modulation characteristics.

Abstract: Organic light-emitting devices having an emissive region comprising a hole transport material and an electron transport material in varying material concentration across the devices. Variation of the concentration of the hole transport material and electron transport material is provided continuously or in a graded manner, as opposed to using multiple layers arranged to form a step-like gradient.

Abstract: The contact resistance between an oxide semiconductor film and a metal film is reduced. A transistor that uses an oxide semiconductor film and has excellent on-state characteristics is provided. A semiconductor device capable of high-speed operation is provided. In a transistor that uses an oxide semiconductor film, the oxide semiconductor film is subjected to nitrogen plasma treatment. Thus, part of oxygen included in the oxide semiconductor film is replaced with nitrogen, so that an oxynitride region is formed. A metal film is formed in contact with the oxynitride region. The oxynitride region has lower resistance than the other region of the oxide semiconductor film. In addition, the oxynitride region is unlikely to form high-resistance metal oxide at the interface with the contacting metal film.

Abstract: An object is to provide an oxide semiconductor layer having a novel structure which is preferably used for a semiconductor device. Alternatively, another object is to provide a semiconductor device using an oxide semiconductor layer having the novel structure. An oxide semiconductor layer includes an amorphous region which is mainly amorphous and a crystal region containing crystal grains of In2Ga2ZnO7 in a vicinity of a surface, in which the crystal grains are oriented so that the c-axis is almost vertical with respect to the surface. Alternatively, a semiconductor device uses such an oxide semiconductor layer.

Abstract: Transistors and methods of manufacturing the same. A transistor may be an oxide thin film transistor (TFT) with a self-aligned top gate structure. The transistor may include a gate insulating layer between a channel region and a gate electrode that extends from two sides of the gate electrode. The gate insulating layer may cover at least a portion of source and drain regions.

Abstract: A test structure for measuring a Micro-Electro-Mechanical System (MEMS) cavity height structure and calibration method. The method includes forming a sacrificial cavity material over a plurality of electrodes and forming an opening into the sacrificial cavity material. The method further includes forming a transparent or substantially transparent material in the opening to form a transparent or substantially transparent window. The method further includes tuning a thickness of the sacrificial cavity material based on measurements obtained through the transparent or substantially transparent window.

Abstract: A photodetector includes a semiconductor substrate having an irradiation zone configured to generate charge carriers having opposite charge carrier types in response to an irradiation of the semiconductor substrate. The photodetector further includes an inversion zone generator configured to operate in at least two operating states to generate different inversion zones within the substrate, wherein a first inversion zone generated in a first operating state differs from a second inversion zone generated in a second operating state, and wherein the first inversion zone and the second inversion zone have different extensions in the semiconductor substrate. A corresponding method for manufacturing a photodetector and a method for determining a spectral characteristic of an irradiation are also described.

Abstract: In a case where a semiconductor chip is mounted over a first package, 80 pads are coupled to 80 terminals of the package, and in a case where the semiconductor chip is mounted over a second package, 100 pads are coupled to 100 terminals of the second package. An internal circuit of the semiconductor chip operates as a microcomputer with 80 terminals in a case where electrodes are insulated from each other and operates as a microcomputer with 100 terminals in a case where the electrodes are shorted therebetween by an end part of a bonding wire. Therefore, a dedicated pad for setting the number of terminals of the packages is no longer required.

Abstract: A thin film transistor includes a substrate with a recess formed therein, a channel region received in the recess, a gate insulating layer formed on the channel region, a gate electrode formed on the gate insulating layer, and a source region and a drain region connecting the channel region, respectively. The gate insulating layer and the gate electrode are positioned between the source region and the drain region. The channel region is made of a nitride compound semiconductor. A method of manufacturing the thin film transistor is also provided.

Abstract: A protection circuit for efficiently reducing the influence of ESD and a semiconductor device in which the influence of ESD is efficiently reduced are provided. The protection circuit includes at least two protection diodes. Each protection diode is a transistor including two gates facing each other with a semiconductor layer in which a channel is formed sandwiched between the gates. A fixed potential is applied to one of the gates of the transistor.

Abstract: A thin-film transistor includes: a gate electrode; a semiconductor layer separated from the gate electrode with a separation insulating layer in between; and a source electrode and a drain electrode that are connected with the semiconductor layer and are separated from each other. Between the source electrode and the drain electrode, a thickness of the separation insulating layer at a first region where the gate electrode does not overlap both the source electrode and the drain electrode is smaller than a thickness of the separation insulating layer at a second region where the gate electrode overlaps one or both of the source electrode and the drain electrode.

Abstract: A III-N on silicon substrate with enhanced breakdown voltage including a rare earth oxide structure deposited on the silicon substrate and a layer of single crystal III-N semiconductor material deposited on the rare earth oxide structure. The rare earth oxide has a dielectric constant greater (approximately twice) than the III-N semiconductor material. The rare earth oxide structure is selected to cooperate with the layer of single crystal III-N semiconductor material to reduce the thickness of the layer of single crystal III-N semiconductor material required for a selected breakdown voltage to a value less than a thickness of the layer of single crystal III-N semiconductor material for the selected breakdown voltage without the cooperating single crystal rare earth oxide.

Abstract: A virtual substrate structure with a lattice matched crystalline reflector for a light emitting device including a single crystal rare earth oxide layer deposited on a silicon substrate and substantially crystal lattice matched to the silicon substrate. A reflective layer of single crystal electrically conductive material is deposited on the layer of single crystal rare earth oxide and a layer of single crystal semiconductor material is positioned in overlying relationship to the reflective layer and substantially crystal lattice matched to the reflective layer. A single crystal rare earth oxide layer is optionally deposited between the reflective layer and the layer of semiconductor material.

Abstract: A semiconductor device of an embodiment includes: a first semiconductor layer made of AlXGa1-XN (0<x<1) or InyAl1-yN (0?y?1); a first semiconductor region, an insulating film, and an anode electrode that are formed on the same plane of the first semiconductor layer, and are made of undoped, n-type, or p-type GaN; and a cathode electrode formed on the first semiconductor region. In this semiconductor device, the first semiconductor region, the insulating film, and the anode electrode are joined to the first semiconductor layer. The insulating film is joined to the first semiconductor layer between the first semiconductor region and the anode electrode. The junction between the anode electrode and the first semiconductor layer is an ohmic junction. The junction between the cathode electrode and the first semiconductor region is an ohmic junction.