Abstract: In order to prevent an increase in temperature of a discharge resistance discharging an electric charge accumulated in a smoothing capacitor, the present description discloses a power module. The power module has a first lead frame, a second lead frame, first and second semiconductor switches connected in series between the first lead frame and the second lead frame, a resistor connected between the first lead frame and the second lead frame, and a resin package that encapsulates the first lead frame, the second lead frame, the first semiconductor switch, the second semiconductor switch, and the resistor. In this power module, a radiator portion for radiating heat from the first lead frame and/or the second lead frame is formed in at least a part of the package.

Abstract: A method of packaging a semiconductor die includes the use of an embedded ground plane or drop-in embedded unit. The embedded unit is a single, stand-alone unit with at least one cavity. The embedded unit is placed on and within an encapsulation area of a process mounting surface. The embedded unit may have different sizes and shapes and a number of different cavities that can be placed in a predetermined position on a substrate, panel or tape during processing of semiconductor dies that are embedded into redistributed chip package (RCP) or wafer level package (WFL) panels. The embedded unit provides the functionality and design flexibility to run a number of embedded units and semiconductor dies or components having different sizes and dimensions in a single processing panel or batch and reduces die drift, movement or skew during encapsulation and post-encapsulation cure.

Abstract: A semiconductor device has a semiconductor die and conductive layer formed over a surface of the semiconductor die. A first channel can be formed in the semiconductor die. An encapsulant is deposited over the semiconductor die. A second channel can be formed in the encapsulant. A first insulating layer is formed over the semiconductor die and first conductive layer and into the first channel. The first insulating layer extends into the second channel. The first insulating layer has characteristics of tensile strength greater than 150 MPa, elongation between 35-150%, and thickness of 2-30 micrometers. A second insulating layer can be formed over the semiconductor die prior to forming the first insulating layer. An interconnect structure is formed over the semiconductor die and encapsulant. The interconnect structure is electrically connected to the first conductive layer. The first insulating layer provides stress relief during formation of the interconnect structure.

Abstract: A method for forming metallurgical interconnections and polymer adhesion of a flip chip to a substrate includes providing a chip having a set of bumps formed on a bump side thereof and a substrate having a set of interconnect points on a metallization thereon, providing a measured quantity of a polymer adhesive in a middle region of the chip on the bump side, aligning the chip with the substrate so that the set of bumps aligns with the set of interconnect points, pressing the chip and the substrate toward one another so that a portion of the polymer adhesive contacts the substrate and the bumps contact the interconnect points, and heating the bumps to a temperature sufficiently high to form a metallurgical connection between the bumps and the interconnect points.

Abstract: A semiconductor device includes a conductive layer formed on the surface of a post-passivation interconnect (PPI) structure by an immersion tin process. A polymer layer is formed on the conductive layer and patterned with an opening to expose a portion of the conductive layer. A solder bump is then formed in the opening of the polymer layer to electrically connect to the PPI structure.

Abstract: A packaging substrate includes a base body having at least a conductive pad on a surface thereof, a dielectric layer formed on the surface of the base body and having at least a first opening for exposing the conductive pad and at least a second opening formed at a periphery of the first opening, and a metal layer formed on the conductive pad and the dielectric layer and extending to a sidewall of the second opening, thereby effectively eliminating side-etching of the metal layer under a solder bump.

Abstract: A semiconductor device suitable for preventing malfunction is provided. The semiconductor device includes a semiconductor chip 1, a first electrode pad 21 laminated on the semiconductor chip 1, an intermediate layer 4 having a rectangular shape defined by first edges 49a and second edges, and a plurality of bumps 5 arranged to sandwich the intermediate layer 4 by cooperating with the semiconductor chip 1. The first edges 49a extend in the direction x, whereas the second edges extend in the direction y. The plurality of bumps 5 include a first bump 51 electrically connected to the first electrode pad 21 and a second bump 52 electrically connected to the first electrode pad 21. The first bump 51 is arranged at one end in the direction x and one end in the direction y.

Abstract: In a method of improving ball strength of a semiconductor device, a ball pattern of a plurality of connection balls to be formed as electrical connections for the semiconductor device is received. The pattern includes a number of columns and rows crossing each other. The balls are arranged at intersections of the columns and rows. An arrangement of balls in a region of the ball pattern is modified so that the region includes no isolated balls.

Abstract: An integrated circuit package includes an integrated circuit die in a reconstituted substrate. The active side is processed then covered in molding compound while the inactive side is processed. The molding compound on the active side is then partially removed and solder balls are placed on the active side.

Abstract: A package substrate including a dielectric layer, a first conductive layer, a second conductive layer and a bonding pad is provided. The dielectric layer has a top surface and a bottom surface. The first conductive layer is embedded into the dielectric layer, and a first surface of the first conductive layer is exposed from the top surface and has the same plane with the top surface. The second conductive layer is embedded into the dielectric layer and contacts the first conductive layer, and a second surface of the second conductive layer is exposed from the bottom surface and has the same plane with the bottom surface. The bonding pad is partially or completely embedded into the first conductive layer and the dielectric layer, so that the periphery of the bonding pad is confined within a cavity by the sidewalls of both the first conductive layer and the dielectric layer.

Abstract: A semiconductor structure and a manufacturing method thereof are provided. The method includes the following steps. Firstly, a semiconductor substrate having an active surface and a back surface is provided. The active surface is opposite to the back surface, and the semiconductor substrate includes at least one grounding pad disposed on the active surface. Secondly, at least one through silicon via is formed through the semiconductor substrate from the back surface to the active surface thus exposing the grounding pad. Then, a conductive layer is formed on the back surface of the semiconductor substrate and filled into the through silicon via to electrically connect to the grounding pad and the semiconductor substrate.

Abstract: A gas cluster ion beam process is used to reduce and/or even eliminate metal void formation in an interconnect structure. In one embodiment, gas cluster ion beam etching forms a chamfer opening in an interconnect dielectric material. In another embodiment, gas cluster ion beam etching reduces the overhang profile of a diffusion barrier or a multilayered stack of a diffusion barrier and a plating seed layer that is formed within an opening located in an interconnect dielectric material. In yet another embodiment, a gas cluster ion beam process deactivates a surface of an interconnect dielectric material that is located at upper corners of an opening that is formed therein. In this embodiment, the gas cluster ion beam process deposits a material that deactivates the upper corners of each opening that is formed into an interconnect dielectric material.

Abstract: An interconnect structure and method for fabricating the interconnect structure having enhanced performance and reliability, by utilizing a graphene-based barrier metal layer to block oxygen intrusion from a dielectric layer into the interconnect structure and block copper diffusion from the interconnect structure into the dielectric layer, are disclosed. At least one opening is formed in a dielectric layer. A graphene-based barrier metal layer disposed on the dielectric layer is formed. A seed layer disposed on the graphene-based barrier metal layer is formed. An electroplated copper layer disposed on the seed layer is formed. A planarized surface is formed, wherein a portion of the graphene-based barrier metal layer, the seed layer, and the electroplated copper layer are removed. In addition, a capping layer disposed on the planarized surface is formed.

Abstract: An integrated circuit (IC) includes a substrate having a topside semiconductor surface including active circuitry configured to provide functionality and a bottomside surface. A plurality of through substrate vias (TSVs) extend from the topside semiconductor surface to beyond the bottomside surface to provide protruding TSV tips. The TSVs include an outer dielectric liner, a metal comprising diffusion barrier layer on the dielectric liner, and a metal filler on the metal comprising barrier layer. A dielectric metal gettering layer (MGL) is on the bottomside surface lateral to and on sidewalls of the protruding TSV tips. The MGL includes at least one metal gettering agent selected from a halogen or a Group 15 element in an average concentration from 0.1 to 10 atomic %.

Abstract: A structure for picking up a buried layer is disclosed. The buried layer is formed in a substrate and has an epitaxial layer formed thereon. One or more isolation regions are formed in the epitaxial layer. The structure for picking up the buried layer includes a contact-hole electrode formed in each of the isolation regions. A bottom of the contact-hole electrode is in contact with the buried layer. As the structure of the present invention is formed in the isolation region without occupying any portion of the active region, its size is much smaller than that of a sinker region of the prior art. Therefore, device area is tremendously reduced. Moreover, as the contact-hole electrode picks up the buried layer by a metal contact, the series resistance of the device can be greatly reduced. A method of forming the above structure is also disclosed.

Abstract: A system and a method for protecting vias is disclosed. An embodiment comprises forming an opening in a substrate. A barrier layer disposed in the opening including along the sidewalls of the opening. The barrier layer may include a metal component and an alloying material. A conductive material is formed on the barrier layer and fills the opening. The conductive material to form a via (e.g., TSV).

Abstract: At least one metal adhesion layer is formed on at least a Cu surface of a first device wafer. A second device wafer having another Cu surface is positioned atop the Cu surface of the first device wafer and on the at least one metal adhesion layer. The first and second device wafers are then bonded together. The bonding includes heating the devices wafers to a temperature of less than 400° C., with or without, application of an external applied pressure. During the heating, the two Cu surfaces are bonded together and the at least one metal adhesion layer gets oxygen atoms from the two Cu surfaces and forms at least one metal oxide bonding layer between the Cu surfaces.

Abstract: A semiconductor device includes: a substrate comprised by gallium arsenide; an active layer provided on the substrate; a first nickel-plated layer provided on a lower face of the substrate facing the active layer; a copper-plated layer provided on a lower face of the first nickel-plated layer; and a second nickel-plated layer provided on a lower face of the copper-plated layer.

Abstract: A method comprises connecting a substrate having a plurality of integrated circuit (IC) dies to a package substrate, so that the package substrate extends beyond at least two edges of the substrate, leaving first and second edge portions of the package substrate having exposed contacts. The first and second edge portions meet at a first corner of the package substrate. At least a first upper die package is placed over the substrate, so that first and second edge portions of the first upper die package extend beyond the at least two edges of the substrate. Pads on the first and second edge portions of the first upper die package are connected to the contacts of the first and second edge portions of the package substrate.

Abstract: On a wiring conversion part connected to a first conductive film and a second conductive film each functioning as a wiring, a hollow portion is formed inside the second conductive film. A first transparent conductive film provided on the second conductive film is formed so as to cover an upper surface of the second conductive film and an end surface thereof exposed on the hollow portion, and so as not to cover an outer peripheral end surface of the second conductive film. A second transparent conductive film which is a layer above the first transparent conductive film is connected to the second conductive film and the first conductive film, so that the first conductive film and the second conductive film are electrically connected.

Abstract: The present invention provides a semiconductor structure having a lateral TSV and a manufacturing method thereof. The semiconductor structure includes a chip having an active side, a back side disposed opposite to the active side, and a lateral side disposed between the active side and the back side. The chip further includes a contact pad, a lateral TSV and a patterned conductive layer. The contact pad is disposed on the active side. The lateral TSV is disposed on the lateral side. The patterned conductive layer is disposed on the active side and is electrically connected to the lateral TSV and the contact pad.

Abstract: A semiconductor device and methods directed toward preventing a leakage current between a contact plug and a line adjacent to the contact plug, and minimizing capacitance between adjacent lines.

Abstract: A local interconnect is formed in contact with an upper surface of an impurity diffusion region and extends to below a potential supply interconnect. A contact hole electrically couples the local interconnect to the potential supply interconnect. The local interconnect, which is formed in contact with the upper surface of the impurity diffusion region, is used for electrically coupling the impurity diffusion region to the potential supply interconnect.

Abstract: A wiring structure in a semiconductor device may include a first insulation layer formed on a substrate, a first contact plug, a capping layer pattern, a second insulation layer and a second contact plug. The first insulation layer has a first opening that exposes a contact region of the substrate. The first contact plug is formed on the contact region to partially fill up the first opening. The capping layer pattern is formed on the first contact plug to fill up the first opening. The second insulation layer is formed on the capping layer pattern and the first insulation layer. The second insulation layer has a second opening passing through the capping layer pattern to expose the first contact plug. The second contact plug is formed on the first contact plug in the second opening. Since the wiring structure includes the capping layer pattern, the wiring structure may prevent a contact failure by preventing chemicals from permeating into the first contact plug.

Abstract: A device includes a first power semiconductor chip having a first face and a second face opposite to the first face with a first contact pad arranged on the first face. The first contact pad is an external contact pad. The device further includes a first contact clip attached to the second face of the first power semiconductor chip. A second power semiconductor chip is attached to the first contact clip, and a second contact clip is attached to the second power semiconductor chip.

Abstract: A method comprises connecting a substrate having a plurality of integrated circuit (IC) dies to a package substrate, so that the package substrate extends beyond at least two edges of the substrate, leaving first and second edge portions of the package substrate having exposed contacts. The first and second edge portions meet at a first corner of the package substrate. At least a first upper die package is placed over the substrate, so that first and second edge portions of the first upper die package extend beyond the at least two edges of the substrate. Pads on the first and second edge portions of the first upper die package are connected to the contacts of the first and second edge portions of the package substrate.

Abstract: A system and method for forming contacts is provided. An embodiment comprises forming the contacts on a substrate and then coining the contacts by physically shaping them using, e.g., a molding chamber. The physical shaping of the contacts may be performed using a patterned portion of the molding chamber or else by placing a patterned stencil around the contacts prior before a force is applied to physically reshape the contacts. The contacts may be reshaped into a cylindrical, oval, cuboid, or rectangular shape, for example.

Abstract: Embodiments of the present disclosure can be used to both reduce the size and cost and improve the performance and power consumption of next generation wireless communication devices. In particular, embodiments enable board and semiconductor substrate area savings by using the fabrication package (which encapsulates the semiconductor substrate) as a design element in the design of next generation wireless communication devices. Specifically, embodiments use the substrate of the fabrication package to integrate into it components of the wireless radio transceiver (which are conventionally integrated into the semiconductor substrate) and other discrete components of the communication device (which are conventionally placed on the board of the device). As such, reduced board and semiconductor area can be realized.

Abstract: A semiconductor device has a semiconductor die with bumps formed over a surface of the semiconductor die. A conductive layer is formed over a substrate. A patterning layer is formed over the substrate and conductive layer. A masking layer having an opaque portion and linear gradient contrast portion is formed over the patterning layer. The linear gradient contrast portion transitions from near transparent to near opaque. The patterning layer is exposed to ultraviolet light through the masking layer. The masking layer is removed and a portion of the patterning layer is removed to form an opening having a sloped surface to expose the conductive layer. The sloped surface in patterning layer can be formed by laser direct ablation. The semiconductor die is mounted to the substrate with the bumps electrically connected to the conductive layer and physically separated from the patterning layer.

Abstract: A semiconductor device bonded by an anisotropic conductive adhesive composition, the anisotropic conductive adhesive composition having a solid content ratio between a polymer binder system and a curing system of about 40:60 to about 60:40, and a coefficient of thermal expansion of about 150 ppm/° C. or less at about 100° C. or less.

Abstract: A semiconductor device includes a metal substrate; a semiconductor element placed on the metal substrate; a flexible circuit substrate that has one end placed on the metal substrate and is electrically connected to the semiconductor element, the flexible circuit substrate extending over an edge of the metal substrate to outside the metal substrate; a resin wall portion placed, in an outer periphery of the metal substrate, at least at the edge of the metal substrate over which the flexible circuit substrate extends, the resin wall portion being provided on the flexible circuit substrate at the edge; and a resin seal portion provided inside the resin wall portion so as to cover the metal substrate.

Abstract: The present invention relates to a resin paste composition including an organic compound, and a granular aluminum powder having an average particle diameter of from 2 to 10 ?m and a flake-shaped silver powder having an average particle diameter of from 1 to 5 ?m which are uniformly dispersed in the organic compound, and a semiconductor device manufactured by bonding a semiconductor element onto a supporting member through the resin paste composition and then encapsulating the resulting bonded product. According to the present invention, it is possible to provide a resin paste composition used for bonding an element such as semiconductor chips onto a lead frame which is excellent in not only electrical conductivity and bonding property but also working efficiency without using a large amount of rare and expensive silver, and a semiconductor device having a high productivity and a high reliability.

Abstract: An epoxy resin composition for encapsulating a semiconductor chip according to this invention comprises (A) a crystalline epoxy resin, (B) a phenol resin represented by general formula (1): wherein R1 and R2 are independently hydrogen or alkyl having 1 to 4 carbon atoms and two or more R1s or two or more R2s are the same or different; a is integer of 0 to 4; b is integer of 0 to 4; c is integer of 0 to 3; and n is average and is number of 0 to 10, (C) a (co)polymer containing butadiene-derived structural unit or its derivative, and (D) an inorganic filler in the amount of 80 wt % to 95 wt % both inclusive in the total epoxy resin composition.

Abstract: An evaporative humidifier includes a humidifying element having water pockets drawing water up from a tub and then supplying the water to the upper portion of the humidifying element. The water pockets are formed between first and second covers. A first water pocket formation unit is provided on the first cover, a second water pocket formation unit is provided on the second cover, and the first and second water pocket formation units form the water pockets when the first and second covers are coupled. Therefore, the water pockets are formed through molds having a simple structure, as compared to the conventional water pocket, and thus manufacturing costs of the humidifying element assembly are reduced. Further, each water pocket includes plural sub water pockets formed at both sides of an inflow hole formed at the center of each water pocket, and thus carries a large amount of water.

Abstract: A carbonated water manufacturing device, including a sleeve and a bottle cap which are mutually independent, wherein the sleeve includes a sleeve body and a plug body inside the sleeve; the sleeve body and the plug body are provided with a first through-hole and a second through-hole at their side surfaces, respectively; the bottle cap is provided with a perforated through-hole whose bottom is connected with an injection tube; the upper part of the bottle cap is fittingly connected with the lower part of the plug part; the opening at the lower part of the sleeve body is fittingly connected with the lower part of the outer edge of the bottle cap, and the top of the sleeve body acts on the carbon dioxide housing body in the sleeve body; the connection of the lower part of the bottle cap and the injection tube is provided with a check valve.

Abstract: The present invention relates to a micro-sized bubble generator. A micro-sized bubble generator using a highly-dissoved solution based on a rotating unit according to an exemplary embodiment of the present includes: a rotating unit receiving a mixture of water and gas and discharging a solution while making the water and gas collide with each other and rotating the same; a dissolving tank storing the solution discharged from the rotating unit; and a nozzle unit receiving the solution and generating micro-sized bubbles in the water. Accordingly, a massive amount of micro-sized bubbles less than 100 nm in size can be generated.

Abstract: A sheet for use in a heat exchange apparatus. The sheet includes a first vertical rib that extends generally parallel to the vertical axis of the heat exchange apparatus. The sheet also includes a second vertical rib that extends, substantially all the way between the first and second edges of the sheet generally parallel to the first vertical rib. The sheet further includes a first horizontal rib that extends substantially all the way between the third and fourth edges of the sheet. The sheet additionally includes a second horizontal rib that extends substantially all the way between the third and fourth edges of the sheet generally parallel to the first horizontal rib.

Abstract: A sheet for use in a heat exchange apparatus. The sheet includes a first vertical rib that extends in a first direction and protrudes in a second direction out of the plane. The sheet also includes a second vertical rib that extends in the first direction along the sheet, between the first and second edges of the sheet. The second vertical rib also protrudes in the second direction out of the plane. The sheet further includes a first horizontal rib that extends in a third direction along the sheet between the third and fourth edges of the sheet, and protrudes in a fourth direction opposite said second direction. The sheet additionally includes a second horizontal rib that extends in the third direction along the sheet between the third and fourth edges of the sheet. The second horizontal rib protrudes in a fourth direction and intersects said second vertical rib.

Abstract: The invention relates to a device (column) for bringing about a phase contact between a liquid phase and a gaseous phase, in particular a material exchange column, comprising: a shell, which extends along a longitudinal axis and bounds a shell space, at least a first circular tray, arranged in the shell space, for taking up the liquid phase, which extends crosswise to the longitudinal axis, whereby the at least one first tray has through openings for passage of a gaseous phase, so that the gaseous phase can come into phase contact with the liquid phase that is located on the at least one first tray. According to the invention, a large number of sealing weirs projecting from the first tray along the longitudinal axis are provided, which extend in each case along a radial direction of the at least one first tray, so that the first tray is divided into a corresponding plurality of sectors. In addition, the invention relates to an apparatus comprising such a device and a floatable carrier.

Abstract: This invention relates to coated digestive enzyme preparations and enzyme delivery systems and pharmaceutical compositions comprising the preparations. This invention further relates to methods of preparation and use of the systems, pharmaceutical compositions and preparations to treat persons having ADD, ADHD, autism, cystic fibrosis and other behavioral and neurological disorders.

Abstract: The method for preparing a carbon fiber of the present invention includes the steps of: preparing a polyacrylonitrile-based polymer solution; spinning the polyacrylonitrile-based polymer solution to prepare a precursor fiber for a carbon fiber, the precursor fiber having a water content of 20-50%; converting the precursor fiber for a carbon fiber into a preliminary flame-retarded fiber while stretching the precursor fiber for a carbon fiber at an elongation rate of ?10˜?0.1% or 0.1˜5% at 180˜220° C. in air; converting the preliminary flame-retarded fiber into a flame-retardant fiber while stretching the preliminary flame-retarded fiber at an elongation rate of ?5˜5% at 200˜300° C. in air; and heating the flame-retardant fiber under an inert atmosphere to carbonize the flame-retardant fiber.

Abstract: A substantially constant pressure injection molding method and machine that forms molded parts by injecting molten thermoplastic material into a mold cavity at a substantially constant pressure. As a result, the mold cavity is filled with molten thermoplastic material by advancing a continuous flow front of thermoplastic material from a gate to an end of the mold cavity.

Abstract: Pelletizing device and method for pelletizing pelletizing materials having a pelletizing disk inclined to the horizontal and provided rotatable wherein the pelletizing disk is driven via a motor device. The pelletizing disk comprises a bottom and a side wall, the effective height of the side wall being variable. The side wall comprises an inner side wall device and an outer side wall device, the inner side wall device being disposed height-adjustable relative to the outer side wall device.

Abstract: The present invention provides an impregnation system suitable for impregnating filaments continuously with an impregnating substance, said system may comprise an impregnation assembly comprising (a) at least one axial passageway for the filaments having an entrance end and an exit end and (b) at least one passageway for the impregnating substance having at least one inlet for the impregnating substance and at least two outlets for the impregnating substance leading into the passageway for the filaments via the outlets for the impregnating substance, wherein the passageway for the filaments has an oblong cross-section at the outlet point for the impregnating substance, and the at least two outlets for the impregnating substance have an oblong cross-section, and are disposed essentially opposite to each other, at the opposite widths of the passageway for the filaments.

Abstract: The invention relates to an apparatus and a process for producing pigment-containing, in particular carbon-black-containing, polymer mixtures comprising polycarbonates and optionally elastomers, and/or other components, where the mouldings produced therefrom have, after the shaping process via injection moulding or via extrusion, improved surface properties and improved mechanical properties.

Abstract: A method for solid-state/melt extrusion, as can be accomplished using a unitary extruder apparatus comprising a solid-state shearing zone and a melt-state extrusion zone.

Abstract: The present invention provides an imprint apparatus which performs an imprint process, the apparatus including a holding unit configured to hold a mold, a stage configured to hold a substrate, and a control unit configured to control the imprint process, wherein in the imprint process for an outer peripheral shot region among shot regions on the substrate, the control unit controls at least one of the holding unit and the stage to relatively rotate the mold and the substrate so that an outermost portion, in a radial direction of the substrate, of the imprint material supplied to the outer peripheral shot region at least partially separates from the mold last.

Abstract: A press for thermoforming a thermoformable sheet material for obtaining at least one thermomolded object, which has a support base; a pair of female molds supported for rotation around a rotation axis on the support base, diametrically opposite with respect to the rotation axis, drive means for the pair of female molds, comprising a rotary motion source designed to drive a power drive shaft and transmission means designed to transmit the motion from the power drive shaft to the pair of female molds, whereby between power drive shaft and female mold pair there is an angular displacement ratio of an angle greater than 360°, preferably 405°/180°, in order to make the female mold pair complete a sequence of 180° angular travels, thereby angularly and sequentially move each female mold into a molding position, and into a discharge position.

Abstract: Disclosed herein are wheat gluten based compositions having improved mechanical properties as well as articles formed therefrom, and methods of making the same. More particularly, the compositions also include fibrous reinforcing material and may be formed into a variety of products, including but not limited to particle board.

Abstract: Disclosed is a device and a method for processing plastic material with at least one receiving container, wherein at least one mixing and/or comminution tool, rotatable about a rotation axis, is arranged, for mixing and warming the plastic material, and with at least one conveyor for discharging the plastic material from the receiving container, with at least one screw rotating in a housing, where the conveyor is connected, at its material inlet side via an opening which is formed in a side wall of the receiving container, with the interior of the receiving container. An imaginary extension of the central longitudinal axis of the conveyor extends, against the conveyance direction of the conveyor, past the rotation axis of the receiving container, without intersecting this axis, where the longitudinal axis of the conveyor is offset by a separation relative to the radial ray of the receiving container on the discharge side.