Abstract: Semiconductor structures having a nanocrystalline core and corresponding nanocrystalline shell are described. In an example, a semiconductor structure includes an anisotropic nanocrystalline core composed of a first semiconductor material and having an aspect ratio between, but not including, 1.0 and 2.0. The semiconductor structure also includes a nanocrystalline shell composed of a second, different, semiconductor material at least partially surrounding the anisotropic nanocrystalline core.

Abstract: Semiconductor structures having a nanocrystalline core and corresponding nanocrystalline shell and insulator coating are described. In an example, a semiconductor structure includes an anisotropic nanocrystalline core composed of a first semiconductor material and having an aspect ratio between, but not including, 1.0 and 2.0. The semiconductor structure also includes a nanocrystalline shell composed of a second, different, semiconductor material at least partially surrounding the anisotropic nanocrystalline core. An insulator layer encapsulates the nanocrystalline shell and anisotropic nanocrystalline core.

Abstract: Composites having semiconductor structures embedded in a matrix are described. In an example, a composite includes a matrix material. A plurality of semiconductor structures is embedded in the matrix material. Each semiconductor structure includes an anisotropic nanocrystalline core composed of a first semiconductor material and having an aspect ratio between, but not including, 1.0 and 2.0. Each semiconductor structure also includes a nanocrystalline shell composed of a second, different, semiconductor material at least partially surrounding the anisotropic nanocrystalline core. An insulator layer encapsulates each nanocrystalline shell and anisotropic nanocrystalline core pairing.

Abstract: According to one embodiment, in a semiconductor light emitting device, a light emitting layer is partially provided on a first semiconductor layer of a first conductivity type, and has a multiple quantum well structure made by alternately laminating well layers having a first impurity concentration of the first conductivity type and barrier layers having a second impurity concentration of the first conductivity type higher than the first impurity concentration. A second semiconductor layer of a second conductivity type is provided on the light emitting layer, and has a single composition and uniform bandgap. A first distance between a first electrode provided on the first semiconductor layer and a second electrode provided on the second semiconductor layer in a direction parallel to the light emitting layer is larger than a second distance between the first electrode and the second electrode in a direction perpendicular to the light emitting layer.

Abstract: A nanorod light emitting device includes at least one nitride semiconductor layer, a mask layer, multiple light emitting nanorods, nanoclusters, a filling layer disposed on the nanoclusters, a first electrode and connection parts. The mask layer is disposed on the nitride semiconductor layer and has through holes. The light emitting nanorods are disposed in and extend vertically from the through holes. The nanoclusters are spaced apart from each other. Each of the nanoclusters has a conductor and covers a group of light emitting nanorods, among the multiple light emitting nanorods, with the conductor. The first electrode is disposed on the filling layer and has a grid pattern. The connection parts connect the conductor and the first electrode.

Abstract: An optoelectronic device includes: an active semiconductor area (84) for the radiative recombination of electron-hole pairs made in the form of at least one nanowire made of an unintentionally doped semiconductor material; a semiconductor area (88) for the radial injection of holes into the or each nanowire, made of a doped semiconductor material having a first conductivity type and a bandgap smaller than the bandgap of the material forming the nanowire; and a semiconductor area (82) for the axial injection of electrons into the or each nanowire, made of a doped semiconductor material having a second conductivity type opposite to the first conductivity type.

Abstract: A heterocyclic compound represented by Formula 1 below and an organic light-emitting device including the heterocyclic compound: wherein X1 and X2, X1 and R1 to R10 are defined as in the specification.

Abstract: An organic photoelectric device may include an anode and a cathode configured to face each other, and an active layer between the anode and cathode, wherein the active layer includes a quinacridone derivative and a thiophene derivative having a cyanovinyl group.

Abstract: A heterocyclic compound represented by Formula 1A below and an organic light-emitting diode including the same: at least one of R1 to R7 is a group represented by Formula 1B below. in Formulae 1A and 1B, R1 to R9, Ar1, Ar2, A, B, a and b are the same as described in the detailed description section of the present application. The organic light-emitting diode including an organic layer including the heterocyclic compound has a low driving voltage, high luminescence efficiency, and a long lifetime.

Abstract: An organic light-emitting device including: a substrate; a first electrode; a second electrode; an emission layer between the first electrode and the second electrode; and an electron transport layer between the emission layer and the second electrode, wherein the emission layer includes a blue emission layer, the electron transport layer includes a unit that includes a first single layer including a first material, a first mixed layer on the first single layer and including the first material and a second material, a second single layer on the first mixed layer and including the second material, a second mixed layer on the second single layer and including the first and second materials, and a third single layer on the second mixed layer and including the first material, wherein the first mixed layer has a thickness that is larger than that of the second mixed layer.

Abstract: There is provided an organic compound of excellent characteristics that exhibits excellent hole-injecting/transporting performance and has high triplet exciton confining capability with an electron blocking ability, and that has high stability in the thin-film state and high luminous efficiency. The compound is used to provide a high-efficiency, high-durability organic electroluminescent device, particularly a phosphorescent organic electroluminescent device. The present invention is a compound of the following general formula having a carbazole ring structure. The compound is used as a constituent material of at least one organic layer in an organic electroluminescent device that includes a pair of electrodes, and one or more organic layers sandwiched between the pair of electrodes.

Abstract: Methods for fabricating a solution-processed OLED are provided. The methods include depositing an organic layer comprising mixture of an organic electron acceptor and an organic electron donor to form a layer that is insoluble to a non-polar solvent. Devices containing the organic layer may demonstrate improved lifetime and have a lower operating voltage while maintaining good luminous efficiency.

Abstract: A combination of host materials suitable for co-evaporation or premix evaporation, and devices containing the combination of host materials are provided. The combination of host materials provides improved lifetime and efficiency. A method for fabricating devices containing the host material combination is also provided.

Abstract: An object of the present invention is to provide an organic light-emitting device, wherein light trapped in a substrate due to total reflection at the interface between air and a substrate is efficiently extracted to the air side. The organic light-emitting device includes: a transparent electrode; a counter electrode; a light-emitting layer interposed between the transparent electrode and the counter electrode; a front substrate which allows light from the light-emitting layer to exit to the outside from a surface of the front substrate on the opposite side to the light-emitting layer side; and a diffuse reflector which reflects light from the light-emitting layer, wherein the diffuse reflector is provided on a side surface of the front substrate and at a given position on a surface thereof.

Abstract: A novel compound which can be used as a material for a light-emitting element is provided. Specifically, a novel compound is provided which can be suitably used as a material for a light-emitting element where a phosphorescent compound enabling high emission efficiency of the light-emitting element is used as a light-emitting substance. In addition, a novel compound is provided which can be easily synthesized and inexpensively manufactured as well as having the above-described characteristics. A compound is provided in which at least one dibenzothiophenyl group or dibenzofuranyl group is directly bonded to a dibenzo[f,h]quinoxaline skeleton.

Abstract: Provided is a light-emitting module from which light with uniform brightness can be extracted. Further, provided is a beautiful light-emitting module in which Newton's rings are not observed. The light-emitting module includes a first substrate, a light-emitting element formed on one surface side of the first substrate, a second substrate, a conductive spacer maintaining the gap between the first substrate and the second substrate, and a space in which the light-emitting element is sealed between the first substrate and the second substrate. Further, the pressure in the space is lower than or equal to the atmospheric pressure. Furthermore, the conductive spacer is electrically connected to the second electrode in a position overlapping with a partition provided over the first substrate so as to reduce a voltage drop occurring in the second electrode.

Abstract: The described technology relates generally to an OLED display and manufacturing method thereof. The OLED display includes a substrate, a thin film transistor on the substrate and including a semiconductor layer, a gate electrode, a source electrode, and a drain electrode, and an organic light emitting element coupled to the thin film transistor and including a pixel electrode, an organic emission layer, and a common electrode, wherein the semiconductor layer is formed of a polycrystalline silicon layer, and remnants and contaminants at a surface of the polycrystalline silicon layer are reduced or eliminated through an atmospheric pressure plasma treatment. The semiconductor layer is formed of a polycrystalline silicon layer where remnants and contaminants at the surface thereof are reduced or eliminated through an atmospheric pressure plasma treatment.

Abstract: An electroluminescence device having an emission layer comprising a single organic compound layer between a cathode and an anode. The single layer may comprise an emitter component on a single polymer chain of covalently linked (co)-polymer sections Y1, optionally in combination with Y2, and/or Y3, or different polymer chains Y1, optionally in combination with Y2, and/or Y3 blended together. Each of the (co)-polymer contains a spacer unit and a carrier transporting component and optionally an emitter moiety.

Abstract: Embodiments of the invention provide an organic light-emitting display (OLED) panel and a manufacturing method for the OLED panel, which comprises providing a substrate comprising a first electrode layer which comprises a plurality of first electrodes spaced apart from each other, forming an insulating layer on the substrate, etching off the insulating layer over the first electrodes by a photolithography process to form a pattern of sub-pixel depositing areas and forming organic light-emitting layers for desired colors within the sub-pixel depositing areas, and forming a second electrode layer on the insulating layer and the organic light-emitting layers. Embodiments of the invention can exactly prepare the organic light-emitting layers to improve yield.

Abstract: There is provided a polarizer for organic light emitting diodes (OLED) having improved brightness. The polarizer, which comprises a linear polarizer and a ¼ retardation plate, comprises a reflective polarizer film disposed between the linear polarizer and the ¼ retardation plate and transmitting a polarized light horizontal to the transmission axis of the linear polarizer while reflecting a polarized light vertical to the transmission axis of the linear polarizer. The polarizer may be useful to highly improve the brightness of the OLED device when the polarizer is used in the OLED device.

Abstract: A pixel structure comprises a substantially transparent substrate, a drive transistor formed on the substrate, an organic light emitting device formed on the opposite side of the drive transistor from the substrate, a reflective layer disposed between the light emitting device and the drive transistor and having a reflective surface facing the light emitting device. The reflective layer forms an opening offset from the drive transistor for passing light emitted by the light emitting device to the substrate. At least a portion of the reflective layer is preferably concave in shape to direct reflected light from the light emitting device back onto the light-emitting device.

Abstract: Disclosed is a novel organic semiconductor material which has a twisted quaterphenylene skeleton as a central unit and simultaneously possesses a skeleton having an electron-transporting property and a skeleton having a hole-transporting property at the terminals of the quaterphenylene skeleton. Specifically, the organic semiconductor material has a [1,1?:2?,1?:2?,1??]quaterphenyl-4-4??-diyl group, and one of the terminals of the [1,1?:2?,1?:2?,1??]quaterphenyl-4-4??-diyl group is bonded to a skeleton having an electron-transporting property such as a benzoxazole group or an oxadiazole group. A skeleton having a hole-transporting property such as diarylamino group is introduced at the other terminal. This structure allows the formation of a compound having a bipolar property, a high molecular weight, an excellent thermal stability, a large band gap, and high triplet excitation energy.

Abstract: An exemplary embodiment of the present invention provides a method for preparing an organic light-emitting device, comprising the steps of: 1) forming a spacer pattern on a first electrode formed on a substrate; 2) forming an organic material layer and a second electrode; 3) exposing the first electrode by forming an encapsulation thin film and then etching at least one portion of the encapsulation thin film; and 4) forming an auxiliary electrode which is electrically connected to the first electrode exposed in the step 3). The organic light-emitting device according to the exemplary embodiment of the present invention may solve problems of a voltage drop due to resistance of a transparent electrode in a longitudinal direction and of resultant brightness non-uniformity of the diode.

Abstract: The present disclosure relates to an optoelectronic device, in particular to an arrangement for contacting an optoelectronic device. The optoelectronic device (200) includes an elastic electrode (208). A method for forming the elastic electrode (208) is described.

Abstract: Disclosed is a method for preparing an organic electronic device, which contains one or more layers of a suitable functional material on a substrate, which process is characterized in that at least one interlayer of an amphiphilic protein is placed between adjacent layers of the functional material, or between the substrate and the adjacent layer of the functional material. The protein interlayer improves the adhesion of layers without negative impact on the device's performance.

Abstract: The present invention provides an organic light-emitting device material that exhibits high emission efficiency and is used in an organic light-emitting device having a low driving voltage.

Abstract: The present invention provides a method for manufacturing an organic light-emitting device capable of simply manufacturing the organic light-emitting device without requiring a vacuum atmosphere. The manufacturing method of the present invention includes: a step of preparing a supporting substrate having an organic electroluminescent element formed thereon, the organic electroluminescent element containing an anode, a light-emitting layer, an electron injection layer made by forming a film with a solution containing an ionic polymer, and a cathode; and a step of laminating the supporting substrate and a sealing member to one another so as to seal the organic electroluminescent element.

Abstract: A field-effect transistor includes a gate electrode, a source electrode, a drain electrode, a semiconductor active layer, and a dielectric layer. The semiconductor active layer is connected to the source electrode and the drain electrode. The dielectric layer includes denatured albumen and is positioned between the gate electrode and the semiconductor active layer.

Abstract: A semiconductor device which achieves miniaturization with favorable characteristics maintained is provided. In addition, a miniaturized semiconductor device is provided with high yield. In a semiconductor device including an oxide semiconductor, the contact resistance between the oxide semiconductor and the source electrode or the drain electrode is reduced with miniaturization advanced. Specifically, an oxide semiconductor film is processed to be an island-shaped oxide semiconductor film whose side surface has a tapered shape. Further, the side surface has a taper angle greater than or equal to 1° and less than 10°, and at least part of the source electrode and the drain electrode is in contact with the side surfaces of the oxide semiconductor film. With such a structure, the contact region of the oxide semiconductor film and the source electrode or the drain electrode is increased, whereby the contact resistance is reduced.

Abstract: A method of manufacturing silver (Ag)-doped zinc oxide (ZnO) nanowires and a method of manufacturing an energy conversion device are provided. In the method of manufacturing Ag-doped ZnO nanowires, the Ag-doped nanowires are grown by a low temperature hydrothermal synthesis method using a Ag-containing aqueous solution.

Abstract: A TFT substrate (30a) including a TFT (5a) having: a gate electrode (14a) provided on a substrate (10a); a gate insulating film (15) provided to cover the gate electrode (14a); a semiconductor layer (16a) made of an oxide semiconductor provided on the gate insulating film (15) with a channel region (C) arranged to lie above the gate electrode (14a): and a source electrode (19aa) and a drain electrode (19b) provided on the semiconductor layer (16a) to be spaced from each other with the channel region (C) therebetween. A recess (R) is provided on the surface of the channel region (C) of the semiconductor layer (16a) to extend in the channel width direction.

Abstract: A composite oxide sintered body includes In, Zn, and Sn, and has a relative density of 90% or more, an average crystal grain size of 10 ?m or less, and a bulk resistance of 30 m?cm or less, the number of tin oxide aggregate particles having a diameter of 10 ?m or more being 2.5 or less per mm2 of the composite oxide sintered body.

Abstract: Making it possible to improve adhesion between the semiconductor layer and the electrodes, realize high-speed operation of the thin-film transistor by enhancing ohmic contact between these members, reliably prevent oxidation of the electrode surfaces, and realize an electrode fabrication process with few processing steps. The thin-film transistor 10 of the present invention includes a semiconductor layer 4 composed of oxide semiconductor, a source electrode 5 and a drain electrode 6 that are layers composed mainly of copper, and oxide reaction layers 22 provided between the semiconductor layer 4 and each of the source electrode 5 and drain electrode 6, and high-conductance layers 21 provided between the oxide reaction layers 22 and semiconductor layer 4.

Abstract: The present invention provides a precursor composition for forming a conductive oxide film having high conductivity and a stable amorphous structure maintained even after heated at high temperature by a simple liquid phase process. The precursor composition of the present invention contains at least one selected from the group consisting of carboxylates, nitrates and sulfates of lanthanoids (but, except for cerium); at least one selected from the group consisting of carboxylates, nitrosyl carboxylates, nitrosyl nitrates and nitrosyl sulfates of ruthenium, iridium or rhodium; and a solvent containing at least one selected from the group consisting of carboxylic acids, alcohols and ketones.

Abstract: A method for determining, in a first semiconductor material wafer having at least one through via, mechanical stress induced by the at least one through via, this method including the steps of: manufacturing a test structure from a second wafer of the same nature as the first wafer, in which the at least one through via is formed by a substantially identical method, a rear surface layer being further arranged on this second wafer so that the via emerges on the layer; measuring the mechanical stress in the rear surface layer; and deducing therefrom the mechanical stress induced in the first semiconductor material wafer.

Abstract: A TFT array substrate including: a thin-film transistor including an active layer, gate, source and drain electrodes, a first insulation layer between the active layer and the gate electrode, and a second insulation layer between the gate and the source and drain electrodes; a pixel electrode on the first and second insulation layers, and connected to one of the source and drain electrodes; a capacitor including a first electrode on the same layer as the gate electrode, a second electrode formed of the same material as the pixel electrode, a first protection layer on the second electrode, and a second protection layer on the first protection layer; a third insulation layer between the second insulation layer and the pixel electrode, and between the first electrode and the second electrode; and a fourth insulation layer covering the source and drain electrodes and the second protection layer, and exposing the pixel electrode.

Abstract: A thin-film transistor array substrate is disclosed. In one embodiment, the substrate includes: i) a thin-film transistor including an active layer, and gate, source and drain electrodes, ii) a lower electrode of a capacitor, iii) an upper electrode of the capacitor formed on the lower electrode iv) a first insulation layer between the lower and upper electrodes, and between the active layer and the gate electrode, and having a gap outside the lower electrode. The substrate may further include i) a second insulation layer formed on the first insulation layer and having the same etching surface as the first insulation layer in the gap, ii) a bridge formed of the same material as the source and drain electrodes, and filling a part of the gap and iii) a third insulation layer covering the source and drain electrodes and exposing a pixel electrode.

Abstract: The present invention provides a pixel structure including a substrate, a first metal pattern layer, an insulating layer, a second metal pattern layer, a passivation layer, and a conductive protection layer. The substrate has at least one pixel region. The first patterned metal layer is disposed on the substrate, and has a top surface. The insulating layer is disposed on the first patterned metal layer and the substrate, and is in contact with the top surface of the first patterned metal layer. The second patterned metal layer is disposed on the insulating layer in the pixel region, and includes a source and a drain. The passivation layer is disposed on the second patterned metal layer and the insulating layer. A top surface of the source is in contact with the passivation layer, and the conductive protection layer is disposed on the drain.

Abstract: On each of wiring conversion parts connected to a first conductive film and a second conductive film each functioning as a wiring, a first transparent conductive film does not cover an end surface of the second conductive film in proximity to a corner of the first transparent conductive film, and has a portion covering the end surface of the second conductive film on a portion other than the proximity of the corners. A second transparent conductive film as an upper layer of the first transparent conductive film is connected to the first conductive film and the second conductive film, so that the first conductive film and the second conductive film are electrically connected.

Abstract: A fringe field switching (FFS) liquid crystal display (LCD) device which uses an organic insulating layer and consumes less power, in which film quality of an upper layer of a low temperature protective film is changed to improve undercut within a pad portion contact hole, and a method for fabricating the same is provided.

Abstract: To provide a bright and highly reliable light-emitting device. An anode (102), an EL layer (103), a cathode (104), and an auxiliary electrode (105) are formed sequentially in lamination on a reflecting electrode (101). Further, the anode (102), the cathode (104), and the auxiliary electrode (105) are either transparent or semi-transparent with respect to visible radiation. In such a structure, lights generated in the EL layer (103) are almost all irradiated to the side of the cathode (104), whereby an effect light emitting area of a pixel is drastically enhanced.

Abstract: In order to realize a semiconductor device of enhanced TFT characteristics, a semiconductor thin film is selectively irradiated with a laser beam at the step of crystallizing the semiconductor thin film by the irradiation with the laser beam. By way of example, only driver regions (103 in FIG. 1) are irradiated with the laser beam in a method of fabricating a display device of active matrix type. Thus, it is permitted to obtain the display device (such as liquid crystal display device or EL display device) of high reliability as comprises the driver regions (103) made of crystalline semiconductor films, and a pixel region (102) made of an amorphous semiconductor film.

Abstract: One aspect of the present subject matter relates to a method for forming a transistor. According to an embodiment, a fin is formed from a crystalline substrate. A first source/drain region is formed in the substrate beneath the fin. A surrounding gate insulator is formed around the fin. A surrounding gate is formed around the fin and separated from the fin by the surrounding gate insulator. A second source/drain region is formed in a top portion of the fin. Various embodiments etch a hole in a layer over the substrate, form sidewall spacers in the hole, form a fin pattern from the sidewall spacers, and etch into the crystalline substrate to form the fin from the substrate using a mask corresponding to the fin pattern. Other aspects are provided herein.

Abstract: A pixel structure and a method for manufacturing the same are disclosed. The pixel structure of the present invention is a pixel structure implemented by combining an in-plane switching (IPS) technique and a fringe field switching (FFS) technique. In each pixel structure, two transparent conductive layers are utilized to form a storage capacitor (Cst) such that the capacitance of the storage capacitor can be increased without decreasing an aperture ratio of a display panel, and thereby a feedthrough voltage can be reduced so as to prevent a screen from blinking.

Abstract: A flexible display apparatus is disclosed. The flexible display apparatus includes: a substrate on which a display unit for displaying an image, a non-display area formed outside the display unit, and at least one pad for inputting an electrical signal to the display unit are located; and a circuit board including circuit terminals to be electrically connected to the at least one pad. A stiffener including a plurality of reinforcement lines that are patterned to reduce or prevent thermal deformation of the substrate is formed on the substrate.

Abstract: An integrated device including a vertical III-nitride FET and a Schottky diode includes a drain comprising a first III-nitride material, a drift region comprising a second III-nitride material coupled to the drain and disposed adjacent to the drain along a vertical direction, and a channel region comprising a third III-nitride material coupled to the drift region. The integrated device also includes a gate region at least partially surrounding the channel region, a source coupled to the channel region, and a Schottky contact coupled to the drift region. The channel region is disposed between the drain and the source along the vertical direction such that current flow during operation of the vertical III-nitride FET and the Schottky diode is along the vertical direction.

Abstract: The present disclosure relates to an enhancement mode gallium nitride (GaN) transistor device. The GaN transistor device has an electron supply layer located on top of a GaN layer. An etch stop layer (e.g., AlN) is disposed above the electron supply layer. A gate structure is formed on top of the etch stop layer, such that the bottom surface of the gate structure is located vertically above the etch stop layer. The position of etch stop layer in the GaN transistor device stack allows it to both enhance gate definition during processing (e.g., selective etching of the gate structure located on top of the AlN layer) and to act as a gate insulator that reduces gate leakage of the GaN transistor device.

Abstract: A light emitting diode including a GaN substrate, a first type semiconductor layer, a light emitting layer, a second type semiconductor layer, a first electrode, and a second electrode is provided. The GaN substrate has a first surface and a second surface opposite thereto, and the second surface has a plurality of protuberances, the height of the protuberance is h ?m and the distribution density of the protuberance on the second surface is d cm?2, wherein 9.87×107?h2d, and h?1.8. The first type semiconductor is disposed on the first surface of the GaN substrate. The light emitting layer is disposed on a partial region of the first semiconductor layer, and the wavelength of the light emitted by the light emitting layer is from 375 nm to 415 nm. The second semiconductor layer is disposed on the light emitting layer.

Abstract: A semiconductor light emitting device includes a first layer including at least one of n-type GaN and n-type AlGaN; a second layer including Mg-containing p-type AlGaN; and a light emitting section provided between the first and second layers. The light emitting section includes barrier layers of Si-containing AlxGa1-x-yInyN (0?x, 0?y, x+y?1), and a well layer provided between the barrier layers and made of GaInN or AlGaInN. The barrier layers have a nearest barrier layer nearest to the second layer among the barrier layers and a far barrier layer. The nearest barrier layer includes a first portion made of Si-containing AlxGa1-x-yInyN (0?x, 0?y, x+y?1), and a second portion provided between the first portion and the second layer and made of AlxGa1-x-yInyN (0?x, 0?y, x+y?1). The Si concentration in the second portion is lower than those in the first portion and in the far barrier layer.

Abstract: In accordance with certain embodiments, illumination systems are formed by aligning light-emitting elements with optical elements and/or disposing light-conversion materials on the light-emitting elements, as well as by providing electrical connectivity to the light-emitting elements