Abstract: A radiation shield lid for shielding a radioisotope generator. The radiation shield lid includes an alignment structure configured to align the shield lid to a radioisotope generator.

Abstract: A diagnostic instrument is disclosed. The diagnostic instrument may have a highly efficient probe washer station and/or may be able to sense whether there is a tube septum on a specimen tube to be sampled. The instrument may also be able to determine where the bottom of the tube is located. The probe washer station may have a flow of saline that is used to wash both the internal cavity and the external circumference of the probe.

Abstract: A pinch-type isolation valve (10) is provided having an integrated, on-board reservoir (42) for storing a pressurized fluid capable of effecting the collapse of an internal sleeve (32) upon actuation of the valve. Valve (10) comprises an outer wall 16 and an inner wall (30) which define the pressurized gas reservoir (42). An actuator assembly (14) is provided to cause and direct a flow of pressurized gas from the reservoir (42) into a gas-receiving chamber (39) defined between the inner wall (30) and sleeve (32).

Abstract: Dual piston pneumatic actuators used in opening and closing gate valves are disclosed. The actuators allow for pressure to vary based on opening or closing a gate valve versus keeping the gate valve open or closed.

Abstract: Gas safety ball valves (1) in which the opening manoeuvre occurs through a double lifting manoeuvre in the axial direction of the knob (22) for controlling the shutter (7) of the valve (1) and a subsequent rotation of the knob (22) by 90° to open, the closure also possibly occurring directly through simple closure rotation or by previously lifting of the knob (22), wherein during the opening and closing rotation movement the stop projections (32, 33) of the valve (1) slide on sliding segments (37, 38; 37B, 38B) provided in the knob (22) coplanar or flat-like inclined and associated to relative positioning projections (41, 42). A spring (28) is housed in a chamber between the threaded end (19) of the screw (11) and a chamber (23) of the knob (22) and positioned by way of the same screw (30) fixed in the screw (11).

Abstract: A valve for agricultural spraying machines. The valve is used to control a flow rate of a spray medium in accordance with a valve position. For this purpose, the valve comprises an electrically operated actuator, which can change the valve position of the valve. The valve comprises an electrical energy store, which stores electrical energy for operating the actuator. The valve further has a control and evaluation unit, which is configured to charge the electrical energy store and to control the actuator. The electrical energy store has a capacity that ensures at least two switching operations of the valve. The control and evaluation unit is configured to control the actuator to generate a periodic movement with a defined number of movement strokes and a defined amplitude for shaking free the valve by the help of the electrical energy store if the valve is soiled or gridlocked.

Abstract: A cast ceiling tile and method for manufacture incorporates chitosan in an amount sufficient to provide improved strength.

Abstract: Compositions comprising an activated oil blend are provided. Also provided are compositions comprising a halo-alkene complex can be used as a refrigerant. The compositions can increase the energy efficiency and reduces leakage rates of refrigeration systems. Some compositions comprise at least 0.1 wt % of an oleic oil fatty acid, 0.1 wt % of a linoleic oil fatty acid, and at least 98 wt % of r-134a. Some compositions comprise an oil blend comprising an oleic acid to linoleic acid ratio of approximately 60:1. At least some of the r-134a can be complexed with at least one of the organic oil fatty acids.

Abstract: Compositions including a polar heat transfer fluid that was passed through a vessel containing a catalyst are disclosed. Preferred catalysts can comprise copper, polyamide, stainless steel, or a combination thereof. Compositions can also comprise one or more types of long chain fatty acids, preferably from food oils, and preferably fatty acids that have been activated by virtue of having been passed through a vessel comprising a catalyst.

Abstract: Compositions including an activated oil blend are provided. An oil blend can comprise one or more oils having a long chain fatty acid, preferably an oleic acid or linoleic acid. An oil blend of the inventive subject matter can be activated in an open or closed vessel comprising a catalyst. Some preferred catalysts include copper, a polyamide such as Nylon, and stainless steel. The activated oil blend can be combined with, among other things, a fluid having molecules of sufficient polarity to complex with a fatty acid molecule of the activated oil blend.

Abstract: The present invention provides a highly stable HFO refrigerant composition for use in a vapor compression-type refrigeration system, having improved slidability for the sliding portions of the vapor compression-type refrigeration system. More specifically, the present invention provides an HFO refrigerant composition comprising at least one type of HFO refrigerant and a polymer of halogenated propene represented by C3HaFbClc (provided that a+b+c=6, a=an integer of 1 to 3, b=an integer of 3 to 5, and c=an integer of 0 to 1) that is an oligomer having a molecular weight of 200 to 900.

Abstract: Scale inhibitor compositions and methods of inhibiting scale formation generally include a tagged scale inhibiting (co)polymer including at least one scale inhibiting moiety and an imidazole moiety. The imidazole moiety fluoresces at a wavelength of about 424 nm and can be used to detect the amount of scale inhibitor present.

Abstract: Provided is a lithium transition metal oxide having an ?-NaFeO2 layered crystal structure, as a cathode active material for lithium secondary battery, wherein the transition metal includes a blend of Ni and Mn, an average oxidation number of the transition metals except lithium is +3 or higher, and the lithium transition metal oxide satisfies Equations 1 and 2: 1.0<m(Ni)/m(Mn)??(1) m(Ni2+)/m(Mn4+)<1??(2) wherein m(Ni)/m(Mn) represents a molar ratio of nickel to manganese and m (Ni2+)/m (Mn4+) represents a molar ratio of Ni2+ to Mn4+. The cathode active material of the present invention has a uniform and stable layered structure through control of oxidation number of transition metals to a level higher than +3, in contrast to conventional cathode active materials, thus advantageously exerting improved overall electrochemical properties including electric capacity, in particular, superior high-rate charge/discharge characteristics.

Abstract: A polymer dispersed liquid crystal composition for lowering driving voltage of a polymer dispersed liquid crystal display device includes a polymer material, a plurality of liquid crystal molecules, and a plurality of non-conducting particles. The liquid crystal molecules are dispersed in the polymer material, and the liquid crystal molecules are disposed in a plurality of liquid crystal encapsulators formed by the polymer material. The non-conducting particles are dispersed in the polymer material.

Abstract: The invention relates to a liquid-crystalline medium based on a mixture of polar compounds having negative dielectric anisotropy, which contains at least one compound of the formula I and at least one compound of the formula II in which R1, R2, R3, R4, ring A, Z1, Z2 and m are as defined in claim 1, and to the use thereof for an active-matrix display based on the ECB, VA, PS-VA, FFS, PALC or IPS effect.

Abstract: The present invention provides, among other aspects, stabilized chromophoric nanoparticles. In certain embodiments, the chromophoric nanoparticles provided herein are rationally functionalized with a pre-determined number of functional groups. In certain embodiments, the stable chromophoric nanoparticles provided herein are modified with a low density of functional groups. In yet other embodiments, the chromophoric nanoparticles provided herein are conjugated to one or more molecules. Also provided herein are methods for making rationally functionalized chromophoric nanoparticles.

Abstract: The present invention provides, among other aspects, stabilized chromophoric nanoparticles. In certain embodiments, the chromophoric nanoparticles provided herein are rationally functionalized with a pre-determined number of functional groups. In certain embodiments, the stable chromophoric nanoparticles provided herein are modified with a low density of functional groups. In yet other embodiments, the chromophoric nanoparticles provided herein are conjugated to one or more molecules. Also provided herein are methods for making rationally functionalized chromophoric nanoparticles.

Abstract: Solar receivers which produce heat at very high temperatures (in excess of 1000° C.) are described herein. The receiver produces the high temperature heat and radiates the heat to a containment element (e.g., pipe) that contains a heat transfer fluid which absorbs the heat. The fluid is preferably a material which is thermally and chemically stable at the temperatures involved. The heat transfer fluid absorbs the heat and can deliver it to a reactor system to drive an endothermic reaction, such as thermochemical water splitting, CO2 capture, and/or syngas production. Alternatively, the heat can be used to directly generate electricity through a high temperature heat engine such as a Brayton or combined Brayton+Rankine cycle.

Abstract: Epoxy-polysiloxane based coating and flooring compositions exhibiting improved flexibility, and excellent weatherability and corrosion resistance after curing are described. The epoxy-polysiloxane polymer coating composition may be prepared by combining a polysiloxane, an epoxide resin material and a cure system including a blend of compounds selected from a dialkoxy functional aminosilane, a trialkoxy functional aminosilane, and an amino functional polysiloxane resin, where the blend has an average alkoxy functionality value of 2.0 to 2.8.

Abstract: This invention relates to a novel comprehensive composition comprising the major inorganic salts, urea, organic compounds, organic ammonium salts, proteins and human immuglobins present in normal human urine formulated into unisex synthetic human urine.

Abstract: A wet-chemical method of producing a black silicon substrate. The method comprising soaking single crystalline silicon wafers in a predetermined volume of a diluted inorganic compound solution. The substrate is combined with an etchant solution that forms a uniform noble metal nanoparticle induced Black Etch of the silicon wafer, resulting in a nanoparticle that is kinetically stabilized. The method comprising combining with an etchant solution having equal volumes acetonitrile/acetic acid:hydrofluoric acid:hydrogen peroxide.

Abstract: Disclosed is an anode active material including: a crystalline phase comprising Si and a Si-metal alloy; and an amorphous phase comprising Si and a Si-metal alloy, wherein the metal of the Si-metal alloy of the crystalline phase is the same as or different from the metal of the Si-metal alloy of the amorphous phase.

Abstract: A negative electrode active material for a lithium ion battery having the composition formula SiaSnbNicTiyMmCz, wherein a, b, c, y, m and z represent atomic % values, wherein M is either one of more of Fe, Cr and Co, and wherein a>0, b>0, z>0, y?0, 0?m?1, c>5, z+0.5*b>a and c+y>0.75*b. The process for preparing the active material comprises the steps of:—providing a mixture of elemental and/or alloyed powders of the elements in the composition SiaSnbNicTiyMmCz, and—high energy milling under non-oxidizing conditions of the powder mixture.

Abstract: Disclose is a triphenylamine derivative with a low band gap. The triphenylamine derivative is represented by Formula (I): wherein R1 and Ar are as defined in the specification. Further disclosed is a highefficiency organic photovoltaic cell using the derivative.

Abstract: An electroconductive transparent adhesive composition containing a transparent adhesive monomer, any one electroconductive mesoporous filler selected from the group consisting of porous carbon, an electroconductive polymer and combinations thereof, and a polymerization initiator, and an electroconductive transparent adhesive produced using the composition are provided. The electroconductive transparent adhesive composition is less expensive and highly economically efficient, and has excellent electrical conductivity and transparency, and has excellent mechanical strength. Thus, the electroconductive transparent adhesive composition can be used in a variety of electrical and electronic applications such as touch screens, displays, and electronic devices.

Abstract: A luminescent material of gallium indium oxide and preparation method thereof are provided. The luminescent material of gallium indium oxide has a chemical formula of GaInO3:zM, wherein, M is the metal nano-particle which is selected from one or two of Ag, Au, Pt and Pd, and z meets the condition of 1×10?5?z?0.02. The method for preparing the luminescent material comprises the following steps: (1) preparing the mixed solution containing indium ion and gallium ion; (2) adding chelator and crosslinking agent into the mixed solution to obtain a chelate solution; (3) adding M nano-particles sol which is surface treated into the chelate solution, heating by water-bath and stirring, drying to obtain the precursor of the luminescent material; (4) preheating the precursor, cooling, grinding, calcining, then cooling and grinding again to obtain the luminescent material.

Abstract: The method for manufacturing a silver particle-containing composition according to the invention is directed to a method for manufacturing a silver particle-containing composition coated with a fatty acid and includes a step (A) of preparing silver particles coated with a first fatty acid (a) with 3 to 7 carbon atoms, a second fatty acid (b) with 2 to 20 carbon atoms, and a solvent in which the first and second fatty acids can disperse, respectively, a step (B) of adding the silver particles coated with the first fatty acid (a) and the second fatty acid (b) into the solvent, and a step (C) of substituting the second fatty acid (b) for the first fatty acid (a) coating the silver particles after the addition step.

Abstract: A thermoelectric material that comprises a ternary main group matrix material and nano-particles and/or nano-inclusions of a Group 2 or Group 12 metal oxide dispersed therein. A process for making the thermoelectric material that includes reacting a reduced metal precursor with an oxidized metal precursor in the presence of nanoparticles.

Abstract: A conductive protective film has a surface layer including a resin and, as a conducting material, an inorganic metal oxide having a structural constitution or an inorganic metal oxide having an aspect ratio, which is a ratio between a short axis and a long axis, of approximately 10 or more.

Abstract: This oxide sintered compact is obtained by mixing and sintering powders of zinc oxide, tin oxide and indium oxide. As determined by X-ray diffractometry of this oxide sintered compact, the oxide sintered compact has a Zn2SnO4 phase as the main phase and contains an In/In2O3—ZnSnO3 solid solution wherein In and/or In2O3 is solid-solved in ZnSnO3, but a ZnxInyOz phase (wherein x, y and z each represents an arbitrary positive integer) is not detected. Consequently, the present invention was able to provide an oxide sintered compact which is suitable for use in the production of an oxide semiconductor film for display devices and has both high electrical conductivity and high relative density. The oxide sintered compact is capable of forming an oxide semiconductor film that has high carrier mobility.

Abstract: Disclosed are a dichroic dye for use in a polarization film represented by the following Chemical Formula 1, a polarization film including a polymer resin and the dichroic dye, and a display device including the polarization film. In Chemical Formula 1, Ar, R1 to R4 are the same as those defined in the detailed description.

Abstract: Provided are a cellulose acylate film used for optical compensation and additives used therefor and, more particularly, is a cellulose acylate film with mechanical physical properties, in particular, very improved modulus affecting film durability.

Abstract: An eco-friendly (meth)acrylic flame retardant copolymer includes a phosphorous-based acrylic monomer to provide a high index of refraction and excellent flame retardancy.

Abstract: A Fish-tape Pushing Tool. The tool preferably includes an input shaft that can be inserted into the chuck of a conventional hammer drill or impact driver tool. The device is defined by a groove formed through it sized to accept a conventional fish tape therewithin. When the hammer drill is set to create longitudinal oscillations, it causes the pushing tool to also oscillate. The oscillations of the pushing tool will cause unidirectional teeth within the groove to intermittently grasp the fish tape and incrementally push it down the groove, whereby the user will be able to feed the pulsatingly advancing fish tape through a conduit or along other confined path. The tool is designed to be simple, small and easy to handle for the user.

Abstract: A semiconductor memory device according to an embodiment comprises a semiconductor layer, a variable resistance layer, a sidewall layer, and a buried layer. The semiconductor layer functions as a rectifying device. The variable resistance layer is provided above or below the semiconductor layer and reversibly changes its resistance. The sidewall layer is in contact with a sidewall of the semiconductor layer. The buried layer is embedded in the sidewall layer and is made of material different from that of the sidewall layer. These configurations may adjust the electrical characteristics of the rectifying device to any value.

Abstract: A non-volatile resistance change device includes a first electrode made of a metallic element, a second electrode, a variable resistance layer formed between the first electrode and the second electrode, first wiring formed on the first electrode on a side opposite to the variable resistance layer, and second wiring formed on the second electrode on a side opposite to the variable resistance layer. If the width of the first wiring is represented as A (nm), the width of the second wiring represented as B (nm), and the distance between the first electrode and the second electrode represented as L0 (nm), the following equation is satisfied: 3 2 ? AB < L 0 ? 6.7 .

Abstract: According to an embodiment, a semiconductor device includes first and second memristors. The first memristor includes a first electrode made of a first material, a second electrode made of a second material, and a first resistive switching film arranged between the first and second electrodes. The first resistive switching film is connected to both the first and second electrodes. The second memristor includes a third electrode made of a third material, a fourth electrode made of the second material, and a second resistive switching film arranged between the third and fourth electrodes. The second resistive switching film is connected to both the third and fourth electrodes. The work function of the first material is smaller than that of the second material. The work function of the third material is larger than that of the second material.

Abstract: An organic molecular memory of an embodiment includes: a first conductive layer; a second conductive layer; and an organic molecular layer that is provided between the first conductive layer and the second conductive layer, and contains an organic molecule selected from a group of molecules that simultaneously satisfy the following conditions (I) and (II) in a molecular system having a molecular frame with a ?-electron system spreading along the molecular axis: (I) one of the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbital (LUMO) is delocalized along the molecular axis, and the other one is localized with respect to the molecular axis; and (II) the value of the energy level of the highest occupied molecular orbital (HOMO) is ?5.75 eV or higher.

Abstract: A semiconductor device includes a first semiconductor layer extending in a first direction on a substrate, a plurality of second semiconductor layers spaced apart in the first direction on the first semiconductor layer, and an insulation layer structure surrounding side walls of the first semiconductor layer and the plurality of second semiconductor layers. The first semiconductor layer may have a first conductivity type, and the plurality of second semiconductor layers may have a second conductivity type.

Abstract: Self-aligning fabrication methods for forming memory access devices comprising a doped chalcogenide material. The methods may be used for forming three-dimensionally stacked cross point memory arrays. The method includes forming an insulating material over a first conductive electrode, patterning the insulating material to form vias that expose portions of the first conductive electrode, forming a memory access device within the vias of the insulating material and forming a memory element over the memory access device, wherein data stored in the memory element is accessible via the memory access device. The memory access device is formed of a doped chalcogenide material and formed using a self-aligned fabrication method.

Abstract: A method of forming a non-volatile memory device. A substrate is provided and a first dielectric material forms overlying the substrate. A first polysilicon material is deposited overlying the first dielectric material. A second dielectric material is deposited overlying the first polysilicon material. A second polysilicon material is deposited overlying the second dielectric material. A third dielectric material is formed overlying the second polysilicon material. The third dielectric material, the second polysilicon material, the second dielectric material, and the first polysilicon material is subjected to a first pattern and etch process to form a first wordline associated with a first switching device and a second wordline associated with a second switching device from the first polysilicon material, a third wordline and associated with a third switching device, and a fourth wordline associated with a fourth switching device from the second polysilicon material.

Abstract: A layer of phase change material with silicon or another semiconductor, or a silicon-based or other semiconductor-based additive, is formed using a composite sputter target including the silicon or other semiconductor, and the phase change material. The concentration of silicon or other semiconductor is more than five times greater than the specified concentration of silicon or other semiconductor in the layer being formed. For silicon-based additive in GST-type phase change materials, sputter target may comprise more than 40 at % silicon. Silicon-based or other semiconductor-based additives can be formed using the composite sputter target with a flow of reactive gases, such as oxygen or nitrogen, in the sputter chamber during the deposition.

Abstract: Methods and apparatuses for a resistive random access memory (RRAM) device are disclosed. The RRAM device comprises a bottom electrode, a resistive switching layer disposed on the bottom electrode, and a top electrode disposed on the resistive switching layer. The resistive switching layer is made of a composite of a metal, Si, and O. There may be an additional tunnel barrier layer between the top electrode and the bottom electrode. The top electrode and the bottom electrode may comprise multiple sub-layers.

Abstract: A nonvolatile semiconductor storage device includes a word line, a first electrode, a high resistance ion diffusion layer, a second electrode, and a bit line. The word line is made of a conductive material extending in a first direction. The first electrode is provided on the word line. The high resistance ion diffusion layer is provided on the first electrode. The second electrode is provided on the ion diffusion layer and configured to supply a metal into the ion diffusion layer upon application of a positive voltage relative to the first electrode. The bit line is provided on the second electrode and made of a conductive material extending in a second direction orthogonal to the first direction. The ion diffusion layer contains oxygen at a higher concentration on the word line side than on the bit line side.

Abstract: A diode layer includes a first impurity semiconductor layer that includes a first impurity acting as an acceptor and a second impurity semiconductor layer that includes a second impurity acting as a donor. One end of a first electrode layer contacts the diode layer. One end of a polysilicon layer contacts the other end of the first electrode layer. One end of a variable resistance layer contacts the other end of the polysilicon layer and is able to change a resistance value. A second electrode layer contacts the other end of the variable resistance layer. At least one of a first area and a second area contains a third impurity. The first area includes one end of the polysilicon layer, the second area includes the other end of the polysilicon layer. The third impurity differs from the first impurity and the second impurity.

Abstract: According to one embodiment, a nonvolatile resistance change element includes a first electrode, a second electrode, a first layer and a second layer. The second electrode contains at least one metal element selected from Ag, Cu, Ni, Co, Al, and Ti. The first layer is arranged between the first electrode and the second electrode. The second layer is arranged between the first electrode and the first layer. A diffusion coefficient of the metal element in the second layer is larger than a diffusion coefficient of the metal element in the first layer.

Abstract: A memory cell (32C), including a first non-insulator (34C) and a second non-insulator (40C), different from the first non-insulator. The second non-insulator forms a junction (46C) with the first non-insulator. The cell further includes a first electrode (48C) which is connected to the first non-insulator and a second electrode (50C) which is connected to the second non-insulator. At least one of the first and second non-insulators is chosen from a group consisting of a solid electrolyte and a mixed ionic electronic conductor and has an ionic transference number less than 1 and greater than or equal to 0.5.

Abstract: Non-volatile storage elements having a reversible resistivity-switching element and techniques for fabricating the same are disclosed herein. The reversible resistivity-switching element may be formed by depositing an oxygen diffusion resistant material (e.g., heavily doped Si, W, WN) over the top electrode. A trap passivation material (e.g., fluorine, nitrogen, hydrogen, deuterium) may be incorporated into one or more of the bottom electrode, a metal oxide region, or the top electrode of the reversible resistivity-switching element. One embodiment includes a reversible resistivity-switching element having a bi-layer capping layer between the metal oxide and the top electrode. Fabricating the device may include depositing (un-reacted) titanium and depositing titanium oxide in situ without air break. One embodiment includes incorporating titanium into the metal oxide of the reversible resistivity-switching element.

Abstract: Phase change memory devices can have bottom patterns on a substrate. Line-shaped or L-shaped bottom electrodes can be formed in contact with respective bottom patterns on a substrate and to have top surfaces defined by dimensions in x and y axes directions on the substrate. The dimension along the x-axis of the top surface of the bottom electrodes has less width than a resolution limit of a photolithography process used to fabricate the phase change memory device. Phase change patterns can be formed in contact with the top surface of the bottom electrodes to have a greater width than each of the dimensions in the x and y axes directions of the top surface of the bottom electrodes and top electrodes can be formed on the phase change patterns, wherein the line shape or the L shape represents a sectional line shape or a sectional L shape of the bottom electrodes in the x-axis direction.

Abstract: A vertical chain memory includes two-layer select transistors having first select transistors which are vertical transistors arranged in a matrix, and second select transistors which are vertical transistors formed on the respective first select transistors, and a plurality of memory cells connected in series on the two-layer select transistors. With this configuration, the adjacent select transistors are prevented from being selected by respective shared gates, the plurality of two-layer select transistors can be selected, independently, and a storage capacity of a non-volatile storage device is prevented from being reduced.