Abstract: An inspection device carries out beam scanning on a stable scanning cycle by enabling flexible change of various scanning sequences according to inspection conditions thereof, and at the same time, eliminates as much unevenness as possible in scanning cycle which hinders stabilization of charging. A beam scanning scheduler schedules beam scanning based on an inputted scanning condition, and a programmable sequencer carries out beam scanning control according to a beam scanning schedule generated by the beam scanning scheduler. The scanning scheduler calculates scanning line reference coordinates on a scanning-line-by-scanning-line basis, based on the scanning condition, and issues a scanning cycle trigger. The programmable sequencer controls supply timing of the scanning line reference coordinates and a scanning position on an in-line pixel-by-pixel basis, based on line scanning procedure information and the scanning cycle trigger provided from the beam scanning scheduler.

Abstract: There is provided a technique that is capable of attracting a sample without making the voltage applied to an electrostatic chuck unnecessarily large. Attraction experiments with respect to the electrostatic chuck are performed using a testing sample whose degree of warp and pattern of warp are known, and a critical application voltage at which the attraction state changes from “bad” to “good” is found. When measuring an inspection target sample, the flatness of the inspection target sample is measured, and the degree of warp and pattern of warp of the inspection target sample are detected. Based on the degree of warp and pattern of warp of the inspection target sample and on the known critical application voltage, the application voltage for the electrostatic chuck is set.

Abstract: A light detecting system is disclosed. The system comprises an arrangement of quantum dots forming an optically active region, a channel region and a charge carrier extractor between the active region and the channel region. The charge carrier extractor is characterized by a set of gradually decreasing energy levels between a characteristic excited energy level of the active region and a characteristic conductance energy level of the channel region.

Abstract: An infrared camera system is provided to detect absorption of infrared radiation in a selected spectral bandwidth. In one example, an infrared camera system includes a lens adapted to receive infrared radiation from a survey scene comprising one or more gasses. The infrared camera system also includes a focal plane array comprising a plurality of quantum well infrared photo detectors (QWIPs). The QWIPs are tuned to detect a limited spectral bandwidth of the infrared radiation corresponding to at least a portion of an infrared absorption band of the one or more gasses. The infrared camera system also includes an optical band pass filter positioned substantially between the lens and the focal plane array. The optical band pass filter is adapted to filter the infrared radiation to a wavelength range substantially corresponding to the limited spectral bandwidth of the QWIPs before the infrared radiation is received by the focal plane array.

Abstract: Methods and systems for detecting radiation, particularly, terahertz (THz) radiation, are disclosed. The methods and systems disclosed include directing an optical beam in a volume of gas; ionizing at least a portion of the volume of gas with the optical beam to produce a plasma; and detecting a fluorescence produced from an interaction of a radiation wave with the plasma. The information contained in the characteristics of the detected fluorescence, for example, the amplitude and/or phase are used to characterize the radiation wave. Aspects of the invention may be used for homeland security, medicine, and astronomy, among other fields.

Abstract: A radiation detection apparatus comprising semiconductor substrates each having a first surface on which a photoelectric conversion portion is formed and a second surface opposite to the first surface; a scintillator layer, placed over the first surfaces of the semiconductor substrates, for converting radiation into light; and an elastic member, placed between a base and the second surfaces, for supporting the second surfaces of the semiconductor substrates such that the first surfaces of the semiconductor substrates are flush with each other is provided. In measurement of the elastic member as a single body, an amount of stretch of a cubic specimen in a direction parallel to the first surface when being compressed in a direction perpendicular to the first surface is smaller than an amount of stretch of the specimen in the direction perpendicular to the first surface when being compressed in the direction parallel to the first surface.

Abstract: The invention relates to an imaging method for simultaneously determining in vivo distributions of bioluminescent and/or fluorescent markers and radioactive markers at identical projection angles, the distribution of the bioluminescent and/or fluorescent markers being determined by separate detection of photons having a first average energy, which are emitted by the bioluminescent and/or fluorescent markers, by means of at least one first detector and the distribution of the radioactive markers being determined by simultaneous separate detection of photons having a second average energy, which are emitted by the radioactive markers, by means of at least one second detector. Furthermore, it also relates to an apparatus for carrying out the imaging method, containing at least one micro lens array optical tomographic imaging system as first detector, at least one single photon emission computer tomography (SPECT) detector as second detector.

Abstract: A radiation detection apparatus including: a sensor panel having a first face on which a pixel region is formed and a second face that is opposite the first face and including a connecting portion at one or more sides; a scintillator layer formed over the pixel region; and a protective film covering the scintillator layer and a portion of the sensor panel is provided. The protective film has a hot-pressed part. At the side of the sensor panel where the connecting portion is formed, the hot-pressed part is formed in a portion of the protective film covering the first face. At other sides of the sensor panel, the hot-pressed part is formed in at least one of a portion of the protective film covering a lateral face of the sensor panel and the second face.

Abstract: A solid-state imaging device according to one embodiment includes a plurality of signal output units. Each of the plurality of signal output units includes a first input terminal electrode group that includes a plurality of terminal electrodes for inputting a reset signal, a hold signal, a horizontal start signal, and a horizontal clock signal and a first output terminal electrode that provides output signals. The solid-state imaging device further includes a second input terminal electrode group that includes a plurality of terminal electrodes for receiving the reset signal, the hold signal, the horizontal start signal, and the horizontal clock signal, a plurality of switches that switch an electrode group which is connected with integrating circuits, holding circuits, and a horizontal shift register between the first input terminal electrode group and the second input terminal electrode group, and a second output terminal electrode.

Abstract: A receiver chip for use in an imaging system includes a plurality of receiver dies, each of the receiver dies comprising one or more receiver circuits; a die interconnection layer located on top of the plurality of receiver dies; a quarter wave dielectric layer located on top of the die interconnection layer; and a plurality of antennae located on the quarter wave dielectric layer, each of the plurality of antennae corresponding to a respective receiver circuit, wherein the plurality of antennae are connected to the one or more receiver circuits through the quarter wave dielectric layer and the die interconnection layer by respective vias, such that a distance between a topmost layer of the die interconnection layer and the plurality of antennae is determined by a thickness of the quarter wave dielectric layer.

Abstract: A radiological image conversion panel includes a phosphor and a light transmissive protection material. The phosphor has a group of columnar crystals formed by growing a crystal of a fluorescent material and a fluorescence emitting surface configured by a set of tips of the columnar crystals. The light transmissive protection material covers the fluorescence emitting surface of the phosphor. The protection material is inserted between the tips of the group of the columnar crystals. A gap is formed between at least a part of a side of the tips of the columnar crystals and the protection material. The radiological image detection apparatus includes a radiological image conversion panel and a sensor panel that is provided close to the fluorescence emitting surface of the phosphor to detect the fluorescence emitted from the phosphor.

Abstract: A probe for detecting K-alpha photon emissions. A housing has an aperture at an end. A detector crystal is situated within the housing adjacent to the housing aperture. An energy conversion device is situated within the housing between the detector crystal and the aperture. The energy conversion device is made from a predetermined material configured to convert energy directed through the housing aperture from a source of primary photon emission radiation to a corresponding secondary K-alpha emission within a predetermined emission energy acceptance window. A power supply is coupled to the detector crystal and is configured to establish a polarized electrical field between the anode and the cathode of the detector crystal. The detector crystal receives the K-alpha emission and generates an electrical signal representative of the amount of target emissions received through the housing aperture.

Abstract: A neutron spectrometer is disclosed, which consists of a Helium-3 proportional counter connected by cable to signal and data processing circuits, and a series of moderator shells and moderator lids. The series of cylindrical moderator shells are designed to fit within one another, like Russian Matryoshka dolls, with the counter at the center. Small air gaps are introduced between the shells so that removal of one shell from another is facilitated. The counter is placed within the smallest cylindrical moderator shell, and then a circular lid matching the smallest shell is placed on the opening of the first shell to close the first shell. This first closed shell is then placed within a second shell, which shell is closed with its corresponding circular lid. The cable is routed through the series of shells. A method for using the invention is also disclosed, wherein the counter reading is taken from the fully-assembled neutron spectrometer.

Abstract: A detector array (110) of an imaging system (100) includes a radiation sensitive detector (114, 116) that detects radiation and generates a signal indicative thereof. A current-to-frequency (I/F) converter (202) converts the signal to a pulse train having a frequency indicative of the signal for an integration period. Circuitry (120) generates a first moment and at least one higher order moment based on the pulse train.

Abstract: The present invention is based on the property that the electric and magnetic fields are independent of each other and normal to each other and the property that the deflection of a charged particle beam by the electromagnetic field follows the rule of linear combination. The present invention employs a system that creates a region in which there exist both electromagnetic field and controls the deflection of a charged particle beam in each of the electric and magnetic fields.

Abstract: A charged particle beam irradiation device includes a particle accelerator that accelerates charged particles and ejects a charged particle beam, a cylindrical outer shell part that is capable of rotating around a rotating axis, an irradiation unit that is capable of irradiating an irradiation target with the charged particle beam, the irradiation direction of which changes in accordance with the rotation of the outer shell part, and a beam transport line that transports the charged particle beam ejected from the particle accelerator to the irradiation unit. The particle accelerator and the beam transport line may be at least partially housed within the outer shell part.

Abstract: The present invention provides a method for extracting a charged particle beam from a charged particle source. A set of electrodes is provided at the output of the source. The potentials applied to the electrodes produce a low-emittance growth beam with substantially zero electric field at the output of the electrodes.

Abstract: An arc chamber assembly for an ion source comprising a housing having a base and at least one pair of side walls extending upwardly from opposite sides of the base to define an arc chamber, the base having a plurality of channels extending to each sidewall; an inlet port connected to the base for delivering a flow of gas into the channels; a bottom liner having at least one pair of notches in each of two opposite side edges thereof and disposed in the housing in spaced parallel relation to the base and opposite the channels for conducting a flow of gas from the inlet port towards the sidewalls, each notch being in communication with a respective channel of the plurality of channels to pass gas upwardly into the arc chamber; and a pair of side liners, each side liner being disposed in the housing in spaced parallel relation to a respective one of the side walls for conducting a flow of gas between the base and the bottom liner, each side liner having at least one pair of slots to horizontally pass gas into the

Abstract: The present disclosure significantly reduces the waiting time from inserting a specimen holder into an electron microscope until high quality data acquisition is possible. Characterizing the present disclosure, it is a specimen holder partly made of low thermal expansion material. The low thermal expansion material can be any of group 4, 5 or 6 in the periodic table of the elements.

Abstract: A lithography apparatus includes a stage on which a target object is placed; a chamber in which the stage is arranged and which has one side surface in which an opening having a size which is enough to carry the stage in or out is formed, the opening being closed with an independent lid; an electro-optic lens barrel arranged on the chamber; and a rib portion formed to have a shape that is convex on an upper portion of the side surface of the chamber in which the opening is formed.

Abstract: A novel method and apparatus is presented wherein an output of infra-red solid state laser or multiple of such lasers is quadrupled in frequency to obtain a laser output that emits energy in ultra violet C spectrum, and wherein this energy is then provided within an air duct as is normal in HVAC systems so as it kill pathogens that are airborne and being carried through the conduit. Further such a method reduces production of ozone, detrimental to human health and produced in other means of generating UVC and provides ease of control of such energy so as to maintain the required energy at a steady level for prolonged period of time.

Abstract: A method and apparatus that are useful for tagging personnel for identification and tracking is disclosed. The apparatus may include a taggant, the taggant being a chemical substance that adheres to at least one of human skin, clothing and equipment of personnel and is undetectable by the human eye, and a taggant deployment mechanism that includes the taggant and is configured to release the taggant upon activation of a triggering mechanism, wherein the taggant deployment mechanism is configured such that when the triggering mechanism is activated, the taggant is released from the taggant deployment mechanism and adheres to at least one of human skin, clothing and equipment of personnel within a radius of a point that the taggant is released, the taggant being detectable only by a taggant detection unit.

Abstract: In certain embodiments, the invention relates to systems and methods for altering an image to compensate for variation in one or more physical and/or supervenient properties (e.g., optical absorption and/or scattering) in heterogeneous, diffuse tissue, thereby attenuating the effects of tissue waveguiding. The methods enable the proper identification of emission image regions that evidence waveguiding of electromagnetic radiation, and enables compensation of emission images for such waveguiding. The methods preserve the depth localization accuracy of the FMT approach and improve optical reconstruction in the targeted areas while eliminating spurious components of fluorescence from the acquired data set. Calibration methods for probe concentration mapping are also presented.

Abstract: A UV (ultraviolet) light disinfectant apparatus useful with a biofilm flow cell for in-line, non-invasive disinfecting of medium flow to and from the flow cell is provided. The disinfectant apparatus includes a UV chamber having a UV light source therein and one or more UV light-transmissive tubes that extend through the UV chamber and through which the fluid medium flows through the UV chamber for exposure to UV light for purposes of disinfectation.

Abstract: Disclosed is a method of freezing a body or a portion thereof. The method comprises exposing at least a part of the body to a coolant having a temperature below the freezing point of the body, and at the same time operating an electromagnetic heater, as to maintain the at least part of the body at a temperature above its freezing point; and reducing the electromagnetic heating to allow the at least a part of the body to freeze. The electromagnetic heater comprises a resonator, and the heated part of the body is heated inside the resonator.

Abstract: According to one embodiment, a mask manufacturing device includes a positional-deviation calculating unit that acquires positional deviation information between an actual position of a pattern formed on a mask substrate and a design position decided at the time of designing the pattern to a predetermined area of a square on the mask substrate; an irradiating-condition calculating unit that calculates an irradiating condition including an irradiating amount and an irradiating position of radiation to correct the positional deviation calculated to the predetermined area of a square on the mask substrate by using positional-deviation correction information, which indicates a relationship between the irradiating amount and the irradiating position of the radiation to the mask substrate and a pattern position change after irradiation of the radiation; and an irradiating unit that irradiates the mask substrate with the radiation under the irradiating condition calculated by the irradiating-condition calculating uni

Abstract: A UV light emitting diode (UV-LED) is arranged in a weathering chamber and a UV light receiving diode, which is constructed on the same material basis as the UV LED, is arranged relative to the UV LED in such a way that a portion of the radiation emitted by the UV LED impinges on the UV light receiving diode during the operation of the device.

Abstract: The invention relates to a charged particle multi-beamlet lithographic system for exposing a target using a plurality of beamlets. The system comprises a beamlet generator for generating a plurality of beamlets, a beamlet blanker for controllably blanking beamlets, and an array of projection lens systems for projecting unblanked beamlets on to the surface of the target. The beamlet generator comprises at least one charged particle source for generating a charged particle beam, a sub-beam generator for defining a plurality of sub-beams from the charged particle beam, a sub-beam manipulator array for influencing the sub-beams, and an aperture array for defining beamlets from the sub-beams.

Abstract: The present invention relates to a method and apparatus for varying the cross-sectional shape of an ion beam, as the ion beam is scanned over the surface of a workpiece, to generate a time-averaged ion beam having an improved ion beam current profile uniformity. In one embodiment, the cross-sectional shape of an ion beam is varied as the ion beam moves across the surface of the workpiece. The different cross-sectional shapes of the ion beam respectively have different beam profiles (e.g., having peaks at different locations along the beam profile), so that rapidly changing the cross-sectional shape of the ion beam results in a smoothing of the beam current profile (e.g., reduction of peaks associated with individual beam profiles) that the workpiece is exposed to. The resulting smoothed beam current profile provides for improved uniformity of the beam current and improved workpiece dose uniformity.

Abstract: A lithography apparatus includes a generating unit configured, by receiving character information which specifies a shape of an identification figure representing identification information of a target object, to generate pattern writing data of the identification figure on the basis of the character information; a synthesizing unit configured, by receiving a pattern writing data of a pattern written on the target object, to synthesize the pattern writing data of the pattern and the pattern writing data of the identification figure; and a pattern writing unit configured to write the pattern and the identification figure on the target object on the basis of the synthesized pattern writing data.

Abstract: An electron beam lithography apparatus includes a beam current detector which detects, during drawing of the drawing data, fluctuation of an irradiation position of the electron beam at non-irradiation on the substrate; a beam position error detector which detects a beam position error of the electron beam based on the fluctuation of the irradiation position; a drive position error detector which detects a drive position error of the stage due to rotation and translation drive during drawing of the drawing data; and a corrector which corrects the irradiation position of the electron beam during the drawing based on the beam position error and the drive position error.

Abstract: Disclosed are embodiments of an ion beam sample preparation apparatus and methods for using the embodiments. The apparatus comprises an ion beam irradiating means in a vacuum chamber that may direct ions toward a sample, a shield blocking a portion of the ions directed toward the sample, and a shield retention stage with shield retention means that replaceably and removably holds the shield in a position. The shield has datum features which abut complementary datum features on the shield retention stage when the shield is held in the shield retention stage. The shield has features which enable the durable adhering of the sample to the shield for processing the sample with the ion beam. The complementary datum features on both shield and shield retention stage enable accurate and repeatable positioning of the sample in the apparatus for sample processing and reprocessing. Additionally, apparatus kits are disclosed that enable the use of the same shields in the observation of prepared samples.

Abstract: The ion implanter includes a deflecting electrode and a shield member. The ion beam has a ribbon shape. The deflecting electrode deflects at least a part of the ion beam in a long side direction toward a short side direction of the ion beam, based on a result measured of a beam current density distribution in the long side direction. The shield member partially shields the ion beam deflected by the deflecting electrode. The deflecting electrode includes a plate electrode and an electrode group including plural electrodes. The electrode group is disposed to face the plate electrode to interpose the ion beam between the plate electrode and the electrode group. The plate electrode is electrically grounded, and the plurality of electrodes are electrically independent from each other. Each of the plurality of electrodes is connected to an independent power source from other power sources to perform a potential setting.

Abstract: An extreme ultraviolet light system and method includes a drive laser, a chamber including an extreme ultraviolet light collector and a target material dispenser including an adjustable target material outlet capable of outputting multiple portions of target material along a target material path. Also included: a drive laser steering device, a detection system including at least one detector and a controller coupled to the target material dispenser, the detector system and the drive laser steering device. The controller includes logic for detecting a location of the first portion of target material from the first light reflected from the first portion of target material and logic for adjusting the target material dispenser outlet to output a subsequent portion of target material to a waist of the focused drive laser. A system and a method for optimizing an extreme ultraviolet light output is also disclosed.

Abstract: Techniques for generating EUV light include directing a first pulse of radiation toward a target material droplet to form a modified droplet, the first pulse of radiation having an energy sufficient to alter a shape of the target material droplet; directing a second pulse of radiation toward the modified droplet to form an absorption material, the second pulse of radiation having an energy sufficient to change a property of the modified droplet, the property being related to absorption of radiation; and directing an amplified light beam toward the absorption material, the amplified light beam having an energy sufficient to convert at least a portion of the absorption material into extreme ultraviolet (EUV) light.

Abstract: According to example embodiments, a variable resistance memory device include an ohmic pattern on a substrate; a first electrode pattern including a first portion that has a plate shape and contacts a top surface of the ohmic pattern and a second portion that extends from one end of the first portion to a top; a variable resistance pattern electrically connected to the first electrode pattern; and a second electrode pattern electrically connected to the variable resistance pattern, wherein one end of the ohmic pattern and the other end of the first portion are disposed on the same plane.

Abstract: Some embodiments include methods of patterning platinum-containing material. An opening may be formed to extend into an oxide. Platinum-containing material may be formed over and directly against an upper surface of the oxide, and within the opening. The platinum-containing material within the opening may be a plug having a lateral periphery. The lateral periphery of the plug may be directly against the oxide. The platinum-containing material may be subjected to polishing to remove the platinum-containing material from over the upper surface of the oxide. The polishing may delaminate the platinum-containing material from the oxide, and may remove the platinum-containing material from over the oxide with an effective selectivity for the platinum-containing material relative to the oxide of at least about 5:1. Some embodiments include methods of forming memory cells. Some embodiments include integrated circuitry having platinum-containing material within an opening in an oxide and directly against the oxide.

Abstract: A phase change memory may be formed of two vertically spaced layers of phase change material. An intervening dielectric may space the layers from one another along a substantial portion of their lateral extent. An opening may be provided in the intervening dielectric to allow the phase change layers to approach one another more closely.

Abstract: Some embodiments include a memory cell that contains programmable material sandwiched between first and second electrodes. The memory cell can further include a heating element which is directly against one of the electrodes and directly against the programmable material. The heating element can have a thickness in a range of from about 2 nanometers to about 30 nanometers, and can be more electrically resistive than the electrodes. Some embodiments include methods of forming memory cells that include heating elements directly between electrodes and programmable materials.

Abstract: A memory device includes an upper conductive layer, a lower conductive layer, and a resistive, optical or magnetic matrix positioned between the upper and lower conductive layers.

Abstract: According to one embodiment, a semiconductor light emitting device includes: a stacked structural body, a first electrode; and a second electrode. The stacked structural body includes a first semiconductor layer of n-type, a second semiconductor layer of p-type, and a light emitting portion provided therebetween. The first electrode includes a first contact electrode portion. The second electrode includes a second contact electrode portion and a p-side pad electrode. A sheet resistance of the second contact electrode portion is lower than a sheet resistance of the first semiconductor layer. The p-side pad electrode is provided farther inward than a circumscribed rectangle of the first contact electrode portion, and the first contact electrode portion is provided farther outward than a circumscribed rectangle of the p-side pad electrode.

Abstract: A light-emitting diode (LED) includes a first conductivity type semiconductor layer, a strain-relaxed layer over the first conductivity type semiconductor layer, an active layer over the strain-relaxed layer, and a second conductivity type semiconductor layer over the active layer. The strain-relaxed layer includes a strain-absorbed layer over the first conductivity type semiconductor layer and a surface-smoothing layer on the strain-absorbed layer filling the cavities. The strain-absorbed layer includes a plurality of cavities in a substantial hexagonal-pyramid form.

Abstract: A volume-scalable, high-brightness, electrically driven visible light source comprises a three-dimensional photonic crystal (3DPC) comprising one or more direct bandgap semiconductors. The improved light emission performance of the invention is achieved based on the enhancement of radiative emission of light emitters placed inside a 3DPC due to the strong modification of the photonic density-of-states engendered by the 3DPC.

Abstract: Provided is an emitting device which is capable of improving the luminous efficiency of an emitting layer formed using a group IV semiconductor material and obtaining an emission spectrum having a narrow band, and a manufacturing method therefor. The emitting device comprises: an emitting layer having a potential confinement structure, comprising: a well region comprising a group IV semiconductor material; and a barrier region being adjacent to the well region and comprising a group IV semiconductor material which is different from the group IV semiconductor material in the well region, wherein: a continuous region from the well region over an interface between the well region and the barrier region to a part of the barrier region comprises fine crystals; and a region in the barrier region, which is other than the continuous region comprising the fine crystals, is amorphous or polycrystalline region.

Abstract: The present invention provides a Group III nitride semiconductor light-emitting device exhibiting high-intensity light output in a specific direction and improved light extraction performance. The Group III nitride semiconductor light-emitting device comprises a sapphire substrate, and a layered structure having a light-emitting layer provided on the sapphire substrate and formed of a Group III nitride semiconductor. On the surface on the layered structure side of the sapphire substrate, a two-dimensional periodic structure of mesas is formed with a period which generates a light intensity interference pattern for the light emitted from the light-emitting layer. The light reflected by or transmitted through the two-dimensional periodic structure has an interference pattern.

Abstract: A high-power and high-efficiency light emitting device with emission wavelength (?peak) ranging from 280 nm to 360 nm is fabricated. The new device structure uses non-polar or semi-polar AlInN and AlInGaN alloys grown on a non-polar or semi-polar bulk GaN substrate.

Abstract: A complementary tunneling field effect transistor and a method for forming the same are provided. The complementary tunneling field effect transistor comprises: a substrate; an insulating layer, formed on the substrate; a first semiconductor layer, formed on the insulating layer and comprising first and second doped regions; a first type TFET vertical structure formed on a first part of the first doped region and a second type TFET vertical structure formed on a first part of the second doped region, in which a second part of the first doped region is connected with a second part of the second doped region and a connecting portion between the second part of the first doped region and the second part of the second doped region is used as a drain output; and a U-shaped gate structure, formed between the first type TFET vertical structure and the second type TFET vertical structure.

Abstract: An organic thin film transistor includes a dielectric layer and an active layer overlapping the dielectric layer, a source contact and a drain contact arranged on a surface of the active layer opposite the dielectric layer and mutually separated by an intermediate region, the source contact and drain contact having first and second inner walls, respectively, facing the intermediate region, and a gate contact arranged on a portion of another surface of the dielectric layer opposite the active layer and having first and second side walls aligned with the first and second inner walls, respectively.

Abstract: An organic electroluminescence device includes: a first electrode layer; an insulating film arranged on the first electrode layer; an organic layer that is arranged on the insulating film, and is in contact with the first electrode layer at an opening portion provided in the insulating film; a second electrode layer arranged on the organic layer; and a metal layer that is in contact with an end surface of the organic layer and an end surface of the second electrode layer, and is arranged on the second electrode layer.

Abstract: An object of the present invention is to provide a conjugated polymer which has a high hole transportability and is excellent in solubility and depositability. Another object of the present invention is to provide an organic electroluminescence element which is capable of low voltage driving and has a high luminous efficiency and drive stability. The conjugated polymer of the present invention is a conjugated polymer containing a specific structure as the repeating unit, where the conjugated polymer contains an insolubilizing group as a substituent, the weight average molecular weight (Mw) is 20,000 or more and the dispersity (Mw/Mn) is 2.40 or less.