Patents Issued in April 3, 2014
-
Publication number: 20140091289Abstract: An organic light emitting display device includes first and second electrodes facing each other on a substrate, a first stack including a first hole transport layer, a second hole transport layer, a first emitting layer, and a first electron transport layer, the layers being sequentially stacked on the first electrode, a second stack including a third hole transport layer, a fourth hole transport layer, a second emitting layer including at least two hosts and a single dopant and having at least three emitting areas, and a second electron transport layer, the layers being sequentially stacked between the first stack and the second electrode, wherein the second emitting layer includes a first emitting area including a material of the fourth hole transport layer, a second emitting area including a material of the second electron transport layer, and a third emitting area including the at least two hosts.Type: ApplicationFiled: September 25, 2013Publication date: April 3, 2014Applicant: LG Display Co., Ltd.Inventors: Jeong-Haeng HEO, Jae-Man LEE, Gwi-Jeong CHO, So-Yeon AHN
-
Publication number: 20140091290Abstract: An encapsulated structure of a light-emitting device, an encapsulating process thereof, and a display device comprising said encapsulated structure. The encapsulated structure of the light-emitting device comprises: a light-emitting device; and a protective layer of a quaternary ammonium salt formed on a top electrode of the light-emitting device, the quaternary ammonium salt having the following structure: wherein the anion X? is Cl?, Br?, I? or NO3?; and the substituents R1, R2, and R3 are the same or different.Type: ApplicationFiled: September 27, 2013Publication date: April 3, 2014Applicant: BOE TECHNOLOGY GROUP CO., LTD.Inventors: Na LI, Joo Hyeon LEE, Pil Seok KIM
-
Publication number: 20140091291Abstract: An array substrate and a manufacturing method thereof, and an OLED display device are provided. The array substrate comprises: sub-pixel units defined by gate lines and data lines that cross with each other on a substrate, each of the sub-pixel units comprising a first TFT, a second TFT and a pixel electrode, a gate electrode of the first TFT being connected to the gate line, a source electrode of the first TFT being connected to the data line, and a drain electrode of the second TFT being connected to the pixel electrode. The source electrode and a drain electrode of the first TFT are formed on the same layer as a gate electrode of the second TFT, and the drain electrode of the first TFT is directly connected to the gate electrode of the second TFT.Type: ApplicationFiled: September 30, 2013Publication date: April 3, 2014Applicant: BOE Technology Group Co., Ltd.Inventor: Jing Niu
-
Publication number: 20140091292Abstract: An organic light emitting diode comprising a light extraction substructure and a diode superstructure is provided. The light extraction substructure comprises a light expulsion matrix distributed over discrete light extraction waveguide elements and a waveguide surface of the glass substrate. The light expulsion matrix is distributed at varying thicknesses to enhance the planarity of a diode superstructure-engaging side of the light extraction substructure and to provide light expulsion sites at the waveguide element termination points of the discrete light extraction waveguide elements.Type: ApplicationFiled: September 30, 2013Publication date: April 3, 2014Applicant: Corning IncorporatedInventors: David Eugene Baker, Daniel Aloysius Nolan, Mark Alejandro Quesada, Wageesha Senaratne
-
Publication number: 20140091293Abstract: Provided is a light-emitting element in which an adverse effect by halides in an EL layer is suppressed and which can be provided with low cost. The light-emitting element including at least two layers between an anode and a light-emitting layer. One of the two layers which is closer to the anode has higher concentration of halides and halogen elements than the other layer closer to the light-emitting layer.Type: ApplicationFiled: October 1, 2013Publication date: April 3, 2014Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Tsunenori Suzuki, Nozomi Komatsu, Harue Osaka, Hiromi Seo, Satoshi Seo
-
Publication number: 20140091294Abstract: An organic light-emitting diode package structure includes an organic light-emitting diode device disposed on a substrate, and a filling layer covering the organic light-emitting diode device and including a fluorine-containing polyimide layer.Type: ApplicationFiled: October 2, 2013Publication date: April 3, 2014Applicant: WINTEK CORPORATIONInventors: Chien-Chung Chen, Hen-Ta Kang
-
Publication number: 20140091295Abstract: The present invention relates to new types of material mixtures composed of at least two substances, one serving as a matrix material and the other being an emission material capable of emission and containing at least one element of atomic number greater than 20, and for their use in organic electronic components such as electroluminescent elements and displays.Type: ApplicationFiled: October 14, 2013Publication date: April 3, 2014Applicant: Merck Patent GmbHInventors: Heinrich Becker, Anja Gerhard, Philipp Stoessel, Horst Vestweber
-
Publication number: 20140091296Abstract: Provided are an adhesive film, an encapsulated product of an organic electronic device using the same, and a method of encapsulating an organic electronic device. Particularly, the adhesive film encapsulating the organic electronic device to cover an entire surface of the organic electronic device includes an adhesive layer including a curable resin and a moisture adsorbent. The adhesive layer has a viscosity in a temperature range of 30 to 130° C. of 101 to 106 Pa·s and a viscosity at room temperature of 106 Pa·s or more in an uncured state, and when the adhesive layer has a multilayered structure, a difference in melting viscosity between layers is less than 30 Pa·s. In addition, the method of encapsulating an organic electronic device using the adhesive film is provided.Type: ApplicationFiled: December 5, 2013Publication date: April 3, 2014Applicant: LG CHEM, LTD.Inventors: Hyun Jee YOO, Yoon Gyung CHO, Seung Min LEE, Suk Ky CHANG, Jung Sup SHIM
-
Publication number: 20140091297Abstract: A triplet light emitting device which has high efficiency and improved stability and which can be fabricated by a simpler process is provided by simplifying the device structure and avoiding use of an unstable material. In a multilayer device structure using no hole blocking layer conventionally used in a triplet light emitting device, that is, a device structure in which on a substrate, there are formed an anode, a hole transporting layer constituted by a hole transporting material, an electron transporting and light emitting layer constituted by an electron transporting material and a dopant capable of triplet light emission, and a cathode, which are laminated in the stated order, the combination of the hole transporting material and the electron transporting material and the combination of the electron transporting material and the dopant material are optimized.Type: ApplicationFiled: December 10, 2013Publication date: April 3, 2014Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Hiroko YAMAZAKI, Atsushi TOKUDA, Tetsuo TSUTSUI
-
Publication number: 20140091298Abstract: The present invention provides a novel compound that is capable of largely improving a life span, efficiency, electrochemical stability and thermal stability of an organic light emitting device, and an organic light emitting device in which the compound is included in an organic compound layer.Type: ApplicationFiled: December 10, 2013Publication date: April 3, 2014Applicant: LG CHEM, LTD.Inventors: Sung Kil HONG, Yun Hwan KIM, Jungoh HUH, Seongmi CHO, Seong So KIM, Yongbum CHA
-
Publication number: 20140091299Abstract: The purpose of the present invention is to provide: an organic electroluminescence element having a plurality of light-emitting dopants of different light-emitting wavelengths and emitting white light, the white-light-emitting organic electroluminescence element having excellent longevity, low-voltage driving, and chromatic stability, and also having a few dark spots; as well as an illumination device and a display device that use the element. This organic electroluminescence element contains at least one light-emitting layer sandwiched between a positive electrode and a negative electrode, the organic electroluminescence element characterized in that the light-emitting layer contribution ratio, defined as the ratio ?PL/?EL of the photoluminescence intensity decay rate to the electroluminescence intensity decay rate, is 0.3 to 1.0.Type: ApplicationFiled: June 11, 2012Publication date: April 3, 2014Applicant: KONICA MINOLTA , INC.Inventors: Kunio Tani, Rie Katakura, Satoru Inoue
-
Publication number: 20140091300Abstract: The present invention relates inter alia to an electronic device, preferably a thin film transistor (TFT) comprising layers with n-type and p-type semi conducting materials, wherein the p-type layer comprises at least one organic hole transport material. Furthermore, the present invention relates to the use of the electronic device according to the invention in an electronic equipment selected from an RFID and backplanes for a display, electronic book and electronic paper, and an electronic equipment comprising an electronic device according to the invention.Type: ApplicationFiled: May 5, 2012Publication date: April 3, 2014Applicant: MERCK PATENT GMBHInventors: Junyou Pan, Andreas Klyszcz, Sabine Renker
-
Publication number: 20140091301Abstract: A transistor including an oxide semiconductor layer can have stable electrical characteristics. In addition, a highly reliable display device including the transistor is provided. The display device includes a multi-layer film including an oxide layer and an oxide semiconductor layer; a gate insulating film in contact with the multi-layer film; and a gate electrode overlapping with the multi-layer film with the gate insulating film provided therebetween. The oxide semiconductor layer contains indium, and is in contact with the oxide layer. The oxide layer contains indium, and has a larger energy gap than the oxide semiconductor layer.Type: ApplicationFiled: September 17, 2013Publication date: April 3, 2014Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventor: Shunpei Yamazaki
-
Publication number: 20140091302Abstract: The disclosure provides a p-type metal oxide semiconductor material. The p-type metal oxide semiconductor material has the following formula: In1?xGa1?yMx+yZnO4+m, wherein M is Ca, Mg, or Cu, 0<x+y?0.1, 0?m?3, and 0<x, 0?y, or 0?x, 0<y, and wherein a hole carrier concentration of the p-type metal oxide semiconductor material is in a range of 1×1015˜6×1019 cm?3.Type: ApplicationFiled: September 27, 2013Publication date: April 3, 2014Applicant: Industrial Technology Research InstituteInventors: Tzu-Chi CHOU, Kuo-Chuang CHIU, Show-Ju PENG, Shan-Haw CHIOU, Yu-Tsz SHIE
-
Publication number: 20140091303Abstract: The semiconductor device includes a driver circuit including a first thin film transistor and a pixel including a second thin film transistor over one substrate. The first thin film transistor includes a first gate electrode layer, a gate insulating layer, a first oxide semiconductor layer, a first oxide conductive layer, a second oxide conductive layer, an oxide insulating layer which is in contact with part of the first oxide semiconductor layer and which is in contact with peripheries and side surfaces of the first and second oxide conductive layers, a first source electrode layer, and a first drain electrode layer. The second thin film transistor includes a second gate electrode layer, a second oxide semiconductor layer, and a second source electrode layer and a second drain electrode layer each formed using a light-transmitting material.Type: ApplicationFiled: December 5, 2013Publication date: April 3, 2014Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei YAMAZAKI, Junichiro SAKATA, Miyuki HOSOBA, Tatsuya TAKAHASHI
-
Publication number: 20140091304Abstract: A laser-radiation sensor includes a copper substrate on which is grown an oriented polycrystalline buffer layer surmounted by an oriented polycrystalline sensor-element of an anisotropic transverse thermoelectric material. An absorber layer, thermally connected to the sensor-element, is heated by laser-radiation to be measured and communicates the heat to the sensor-element, causing a thermal gradient across the sensor-element. Spaced-apart electrodes in electrical contact with the sensor-element sense a voltage corresponding to the thermal gradient as a measure of the incident laser-radiation power.Type: ApplicationFiled: July 17, 2013Publication date: April 3, 2014Inventors: Robert SEMERAD, Erik KROUS, James SCHLOSS
-
Publication number: 20140091305Abstract: A polysilicon thin film and a manufacturing method thereof, an array substrate and a display device are disclosed. The manufacturing method of the polysilicon thin film comprises the following steps: forming a graphene layer and an amorphous silicon layer which are adjacent; forming polysilicon by way of crystallizing amorphous silicon so as to obtain the polysilicon thin film. The polysilicon thin film manufactured by the method possesses good characteristics.Type: ApplicationFiled: August 9, 2013Publication date: April 3, 2014Applicant: BOE Technology Group Co., Ltd.Inventor: Tuo Sun
-
Publication number: 20140091306Abstract: Provided is a technique that allows oxidation of Cu wires to be effectively prevented during plasma processing when forming a passivation film for a display device that utilizes an oxide semiconductor layer. This wiring structure comprises a semiconductor layer (oxide semiconductor) for a thin film transistor, a Cu alloy film (laminated structure comprising a first layer (X) and a second layer (Z)), and a passivation film that are formed on a substrate, starting from the substrate side. The first layer (X) is made of an element that exhibits low electrical resistivity, such as pure Cu; and the second layer contains a plasma-oxidation-resistance improving element. The second layer (Z) is directly connected, at least partially, to the passivation film.Type: ApplicationFiled: March 12, 2012Publication date: April 3, 2014Applicant: Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.)Inventors: Aya Miki, Toshihiro Kugimiya
-
Publication number: 20140091307Abstract: A laser-radiation sensor includes a copper substrate on which is grown an oriented polycrystalline buffer layer surmounted by an oriented polycrystalline sensor-element of an anisotropic transverse thermoelectric material. An absorber layer, thermally connected to the sensor -element, is heated by laser-radiation to be measured and communicates the heat to the sensor-element, causing a thermal gradient across the sensor-element. Spaced-apart electrodes in electrical contact with the sensor-element sense a voltage corresponding to the thermal gradient as a measure of the incident laser-radiation power. At least two protection layers are positioned between the sensor layer and the absorber layer.Type: ApplicationFiled: July 17, 2013Publication date: April 3, 2014Inventors: Robert SEMERAD, Erik KROUS, James SCHLOSS
-
Publication number: 20140091308Abstract: Embodiments include high electron mobility transistors (HEMT). In embodiments, a gate electrode is spaced apart by different distances from a source and drain semiconductor region to provide high breakdown voltage and low on-state resistance. In embodiments, self-alignment techniques are applied to form a dielectric liner in trenches and over an intervening mandrel to independently define a gate length, gate-source length, and gate-drain length with a single masking operation. In embodiments, III-N HEMTs include fluorine doped semiconductor barrier layers for threshold voltage tuning and/or enhancement mode operation.Type: ApplicationFiled: September 28, 2012Publication date: April 3, 2014Inventors: Sansaptak DASGUPTA, Han Wui THEN, Marko RADOSAVLJEVIC, Niloy MUKHERJEE, Niti GOEL, Sanaz KABEHIE, Seung Hoon SUNG, Ravi PILLARISETTY, Robert S. CHAU
-
Publication number: 20140091309Abstract: A predisposed high electron mobility transistor (HEMT) is disclosed. The predisposed HEMT includes a buffer layer, a HEMT channel layer on the buffer layer, a first HEMT barrier layer over the HEMT channel layer, and a HEMT cap layer on the first HEMT barrier layer. The HEMT cap layer has a drain region, a source region, and a gate region. Further, the HEMT cap layer has a continuous surface on the drain region, the source region, and the gate region. When no external voltage is applied between the source region and the gate region, the gate region either depletes carriers from the HEMT channel layer or provides carriers to the HEMT channel layer, thereby selecting a predisposed state of the predisposed HEMT.Type: ApplicationFiled: October 1, 2012Publication date: April 3, 2014Applicant: CREE, INC.Inventor: Christer Hallin
-
Publication number: 20140091310Abstract: A semiconductor device includes a first compound semiconductor layer on a substrate, first through third electrodes spaced apart from each other on the first compound semiconductor layer, a second compound semiconductor layer on the first compound semiconductor layer between the first through third electrodes, a third compound semiconductor layer on the second compound semiconductor layer between the first and second electrodes, a first gate electrode on the third compound semiconductor layer, a fourth compound semiconductor layer having a smaller thickness than the third compound semiconductor layer on a portion of the second compound semiconductor layer between the second and third electrodes, and a second gate electrode on the fourth compound semiconductor layer. The first compound semiconductor layer between the second and third electrodes includes a 2-dimensional electron gas (2DEG) and the third compound semiconductor layer includes a 2-dimensional hole gas (2DHG).Type: ApplicationFiled: April 10, 2013Publication date: April 3, 2014Applicant: Samsung Electronics Co., Ltd.Inventors: Woo-chul Jeon, Jai-kwang Shin, Jae-joon Oh
-
Publication number: 20140091311Abstract: A nitride semiconductor based power converting device includes a nitride semiconductor based power transistor, and at least one nitride semiconductor based passive device. The passive device and the power transistor respectively include a channel layer including a first nitride semiconductor material, and a channel supply layer on the channel layer including a second nitride semiconductor material to induce a 2-dimensional electron gas (2DEG) at the channel layer. The passive device may be a resistor, an inductor, or a capacitor.Type: ApplicationFiled: June 19, 2013Publication date: April 3, 2014Inventors: Woo-chul JEON, Baik-woo LEE, Jai-kwang SHIN, Jae-joon OH
-
Publication number: 20140091312Abstract: A power switching device includes a channel forming layer on a substrate which includes a 2-dimensional electron gas (2DEG), and a channel supply layer which corresponds to the 2DEG at the channel forming layer. A cathode is coupled to a first end of the channel supply layer and an anode is coupled to a second end of the channel supply layer. The channel forming layer further includes a plurality of depletion areas arranged in a pattern, and portions of the channel forming layer between the plurality of depletion areas are non-depletion areas.Type: ApplicationFiled: June 26, 2013Publication date: April 3, 2014Inventors: Woo-chul JEON, Young-hwan PARK, Ki-yeol PARK, Jai-kwang SHIN, Jae-joon OH
-
Publication number: 20140091313Abstract: A semiconductor apparatus includes a substrate; a buffer layer formed on the substrate; a first semiconductor layer formed on the buffer layer; and a second semiconductor layer formed on the first semiconductor layer. Further, the buffer layer is formed of AlGaN and doped with Fe, the buffer layer includes a plurality of layers having different Al component ratios from each other, and the Al component ratio of a first layer is greater than the Al component ratio of a second layer and a Fe concentration of the first layer is less than the Fe concentration of the second layer, the first and second layers being included in the plurality of layers, and the first layer being formed on a substrate side of the second layer.Type: ApplicationFiled: July 5, 2013Publication date: April 3, 2014Inventors: Junji KOTANI, Tetsuro ISHIGURO, Atsushi YAMADA, Norikazu NAKAMURA
-
Publication number: 20140091314Abstract: A semiconductor apparatus includes a buffer layer formed on a substrate; an SLS (Strained Layer Supperlattice) buffer layer formed on the buffer layer; an electron transit layer formed on the SLS buffer layer and formed of a semiconductor material; and an electron supply layer formed on the electron transit layer and formed of a semiconductor material. Further, the buffer layer is formed of AlGaN and includes two or more layers with different Al composition ratios, the SLS buffer layer is formed by alternately laminating a first lattice layer including AlN and a second lattice layer including GaN, and the Al composition ratio in one of the layers of the buffer layer being in contact with the SLS buffer layer is greater than or equal to an Al effective composition ratio in the SLS buffer layer.Type: ApplicationFiled: July 5, 2013Publication date: April 3, 2014Inventors: Tetsuro ISHIGURO, Atsushi YAMADA, Norikazu NAKAMURA
-
Publication number: 20140091315Abstract: A semiconductor device includes an electron transit layer formed on a substrate; an electron supply layer formed on the electron transit layer; a doping layer formed on the electron supply layer, the doping layer being formed with a nitride semiconductor in which an impurity element to become p-type and C are doped; a p-type layer formed on the doping layer, the p-type layer being formed with a nitride semiconductor in which the impurity element to become p-type is doped; a gate electrode formed on the p-type layer; and a source electrode and a drain electrode formed on the doping layer or the electron supply layer. The p-type layer is formed in an area immediately below the gate electrode, and a density of the C doped in the doping layer is greater than or equal to 1×1017 cm?3 and less than or equal to 1×1019 cm?3.Type: ApplicationFiled: July 16, 2013Publication date: April 3, 2014Inventor: Atsushi YAMADA
-
Publication number: 20140091316Abstract: A semiconductor device includes a first semiconductor layer formed on a substrate; a second semiconductor layer and a third semiconductor layer formed on the first semiconductor layer; a fourth semiconductor layer formed on the third semiconductor layer; a gate electrode formed on the fourth semiconductor layer; and a source electrode and a drain electrode formed in contact with the second semiconductor layer. The third semiconductor layer and the fourth semiconductor layer are formed in an area immediately below the gate electrode, the fourth semiconductor layer is formed with a p-type semiconductor material, and the second semiconductor layer and the third semiconductor layer are formed with AlGaN, and the third semiconductor layer has a lower composition ratio of Al than that of the second semiconductor layer.Type: ApplicationFiled: July 17, 2013Publication date: April 3, 2014Inventor: Toshihide KIKKAWA
-
Publication number: 20140091317Abstract: A method of manufacturing a semiconductor crystal substrate, includes forming a nitride layer by supplying a gas including a nitrogen component to a substrate formed of a material including silicon and nitriding a surface of the substrate; and forming an AlN layer on the nitride layer by supplying the gas including the nitrogen component and a source gas including Al.Type: ApplicationFiled: July 17, 2013Publication date: April 3, 2014Inventors: Shuichi TOMABECHI, JUNJI KOTANI, NORIKAZU NAKAMURA
-
Publication number: 20140091318Abstract: A semiconductor apparatus includes: a substrate; a buffer layer formed on the substrate; a strained layer superlattice buffer layer formed on the buffer layer; an electron transit layer formed of a semiconductor material on the strained layer superlattice buffer layer; and an electron supply layer formed of a semiconductor material on the electron transit layer; the strained layer superlattice buffer layer being an alternate stack of first lattice layers including AlN and second lattice layers including GaN; the strained layer superlattice buffer layer being doped with one, or two or more impurities selected from Fe, Mg and C.Type: ApplicationFiled: July 29, 2013Publication date: April 3, 2014Applicant: FUJITSU LIMITEDInventors: Tetsuro Ishiguro, Atsushi Yamada, Norikazu Nakamura
-
Publication number: 20140091319Abstract: A method of manufacturing a semiconductor device includes laminating and forming an electron transit layer, an electron supplying layer, an etching stop layer, and a p-type film on a substrate sequentially, the p-type film being formed of a nitride semiconductor material that includes Al doped with an impurity element that attains p-type, the etching stop layer being formed of a material that includes GaN, removing the p-type film in an area except an area where a gate electrode is to be formed, by dry etching to form a p-type layer in the area where the gate electrode is to be formed, the dry etching being conducted while plasma emission in the dry etching is observed, the dry etching being stopped after the dry etching is started and plasma emission originating from Al is not observed, and forming the gate electrode on the p-type layer.Type: ApplicationFiled: July 30, 2013Publication date: April 3, 2014Applicants: Fujitsu Semiconductor Limited, Fujitsu LimitedInventors: Atsushi Yamada, KENJI NUKUI
-
Publication number: 20140091320Abstract: A semiconductor device includes a first semiconductor layer formed on a substrate, a second semiconductor layer formed on the first semiconductor layer, a third semiconductor layer and a fourth semiconductor layer formed on the second semiconductor layer, a gate electrode formed on the third semiconductor layer, and a source electrode and a drain electrode contacting and formed on the fourth semiconductor layer, wherein the third semiconductor layer is formed of a semiconductor material for attaining p-type on an area just under the gate electrode, and a concentration of silicon in the fourth semiconductor layer is higher than that in the second semiconductor layer.Type: ApplicationFiled: August 16, 2013Publication date: April 3, 2014Applicants: FUJITSU SEMICONDUCTOR LIMITED, FUJITSU LIMITEDInventors: NORIKAZU NAKAMURA, Atsushi Yamada, Tetsuro Ishiguro, JUNJI KOTANI, Kenji Imanishi
-
Publication number: 20140091321Abstract: There is provided a semiconductor device including a semiconductor layer that includes an active region, semiconductor elements that are formed using the active region, connection regions that are obtained by metalizing parts of the semiconductor layer in an island shape isolated from the active region, an insulation film that is formed to cover one main surface side of the semiconductor layer, electrodes that are disposed to face the semiconductor elements and the connection regions via the insulation film, and contacts that penetrate through the insulation film to be selectively formed in portions according to necessity among portions that connect the semiconductor elements or the connection regions to the electrodes.Type: ApplicationFiled: September 4, 2013Publication date: April 3, 2014Applicant: Sony CorporationInventor: Takashi Yokoyama
-
Publication number: 20140091322Abstract: To enhance the reliability of the semiconductor device using a nitride semiconductor. A channel layer is formed over a substrate, a barrier layer is formed over the channel layer, a cap layer is formed over the barrier layer, and a gate electrode is formed over the cap layer. In addition, a nitride semiconductor layer is formed in a region where the cap layer over the barrier layer is not formed, and a source electrode and a drain electrode are formed over the nitride semiconductor layer. The cap layer is a p-type semiconductor layer, and the nitride semiconductor layer includes the same type of material as the cap layer and is in an intrinsic state or an n-type state.Type: ApplicationFiled: September 19, 2013Publication date: April 3, 2014Applicant: Renesas Electronics CorporationInventor: Kohji ISHIKURA
-
Publication number: 20140091323Abstract: A semiconductor epitaxial structure is provided. The semiconductor epitaxial structure includes a substrate, a doped semiconductor epitaxial layer, and a carbon nanotube layer. The doped semiconductor epitaxial layer is located on the substrate. The carbon nanotube layer is located between the substrate and the doped semiconductor epitaxial layer. The carbon nanotube layer can be a carbon nanotube film drawn from a carbon nanotube array and including a number of successive and oriented carbon nanotubes joined end-to-end by van der Waals attractive force therebetween.Type: ApplicationFiled: December 6, 2013Publication date: April 3, 2014Applicants: HON HAI PRECISION INDUSTRY CO., LTD., Tsinghua UniversityInventors: YANG WEI, SHOU-SHAN FAN
-
Publication number: 20140091324Abstract: A switching circuit includes: a first switching element (Q1); a resistor (11) inserted between a control electrode (G) of the first switching element (Q1) and a control circuit (13) switching the first switching element (Q1); and a first capacitor (15) and a second switching element (14) connected in series between the control electrode (G) of the first switching element (Q1) and a low potential-side electrode (S) of the first switching element (Q1). A high potential-side electrode of the second switching element (14) is connected to the control electrode (G) of the first switching element (Q1). An electrode of the first capacitor (15) is connected to the low potential-side electrode (S) of the first switching element (Q1). A control electrode of the second switching element (14) is connected to an electrode of the resistor (11) connected to the control circuit (13).Type: ApplicationFiled: May 11, 2012Publication date: April 3, 2014Inventors: Yusuke Zushi, Yoshinori Murakami, Satoshi Tanimoto, Shinji Sato, Kohei Matsui
-
Publication number: 20140091325Abstract: When an SiC single crystal having a large diameter of a {0001} plane is produced by repeating a-plane growth, the a-plane growth of the SiC single crystal is carried out so that a ratio Sfacet (=S1×100/S2) of an area (S1) of a Si-plane side facet region to a total area (S2) of the growth plane is maintained at 20% or less.Type: ApplicationFiled: June 4, 2012Publication date: April 3, 2014Applicants: KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO, SHOWA DENKO K.K., DENSO CORPORATIONInventors: Itaru Gunjishima, Keisuke Shigetoh, Yasushi Urakami, Masanori Yamada, Ayumu Adachi, Masakazu Kobayashi
-
Publication number: 20140091326Abstract: A semiconductor proximity sensor (100) has a flat leadframe (110) with a first (110a) and a second (110b) surface, the second surface being solderable; the leadframe includes a first (111) and a second (112) pad, a plurality of leads (113, 114), and fingers (115, 118) framing the first pad, the fingers spaced from the first pad by a gap (116) which is filled with a clear molding compound. A light-emitting diode (LED) chip (120) is assembled on the first pad and encapsulated by a first volume (140) of the clear compound, the first volume outlined as a first lens (141). A sensor chip (130) is assembled on the second pad and encapsulated by a second volume (145) of the clear compound, the second volume outlined as a second lens (146). Opaque molding compound (150) fills the space between the first and second volumes of clear compound, forms shutters (151) for the first and second lenses, and forms walls rising from the frame of fingers to create an enclosed cavity for the LED.Type: ApplicationFiled: July 30, 2013Publication date: April 3, 2014Inventors: Andy Quang Tran, Lance Wright
-
Publication number: 20140091327Abstract: A display is provided. The display includes a light emitting element, a filter layer and a photosensor. The filter layer is disposed on a side of the light emitting element. The filter layer includes a black filter. The photosensor is disposed corresponding with the black filter. The photosensor is used for detecting an invisible light from the black filter.Type: ApplicationFiled: September 28, 2012Publication date: April 3, 2014Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Chen-Pang Kung, Wen-Jen Chiang
-
Publication number: 20140091328Abstract: A light receiving section is provided with a plurality of light receiving elements. A light source section is arranged in a subject side of the light receiving section, and is provided with a light emitting section that illuminates the subject and a plurality of transmissive sections that transmits incident light to the light receiving section side. The light emitting section is provided with a first translucent layer, which includes a light emitting layer, and a reflection layer and a semi-transmissive reflection layer, which are opposed each other interposing the first translucent layer, so that a resonance structure that resonates irradiation light from the light emitting layer is formed.Type: ApplicationFiled: September 30, 2013Publication date: April 3, 2014Applicant: SEIKO EPSON CORPORATIONInventors: Hideto ISHIGURO, Tsukasa EGUCHI, Tetsuji FUJITA, Hidetoshi YAMAMOTO
-
Publication number: 20140091329Abstract: The present disclosure involves a lighting instrument. The lighting instrument includes a board or substrate, for example, a printed circuit board substrate. The lighting instrument includes a plurality of light-emitting diode (LED) dies disposed on the substrate. The LED dies are spaced apart from one another. Each LED die is covered with a respective individual phosphor coating that is coated around the LED die conformally. Due at least in part to the individual phosphor coatings, the LED dies and the lighting instrument may assume a substantially white appearance in an off state. The lighting instrument also includes an encapsulation structure disposed over the substrate. The encapsulation structure may be a diffuser cap that encapsulates the light-emitting dies within. A diffuser gel fills the space between the encapsulation structure and the LED dies.Type: ApplicationFiled: September 28, 2012Publication date: April 3, 2014Applicant: TSMC Solid State Lighting Ltd.Inventors: Hsiao-Wen Lee, Chi-Xiang Tseng, Yu-Sheng Tang, Jung-Tang Chu
-
Publication number: 20140091330Abstract: The present invention discloses a LED package structure with transparent electrodes. The electrode layers the semiconductor layers inside the LED chip and the protection layer are all transparent to visible and invisible lights. With the adoption of the present invention, electrodes on the LED package no longer block any part of the light emission from inside the LED.Type: ApplicationFiled: October 2, 2012Publication date: April 3, 2014Inventors: Ming-Hung CHEN, Ching-Jen Pan, Shih-Chang Shei
-
Publication number: 20140091331Abstract: The embodiments of the invention provide a display device, a thin film transistor, an array substrate and a manufacturing method thereof. The manufacturing method comprises: step A, forming patterns of a source electrode, a drain electrode, a data line and a pixel electrode; step B, forming an active layer and agate insulating layer in order, and forming a via hole in the gate insulating layer for connecting the data line and an external circuit; and step C, forming patterns of a gate electrode, a gate line and a common electrode line, or forming a pattern of a gate electrode, a gate line and a common electrode.Type: ApplicationFiled: September 29, 2012Publication date: April 3, 2014Applicant: BOE TECHNOLOGY GROUP CO., LTD.Inventors: Ce Ning, Xuehui Zhang, Jing Yang
-
Publication number: 20140091332Abstract: A LED lighting device includes at least one waveguide element and multiple light-emitting sources such as LEDs or LED packages, which may be optically coupled though different light entry regions to the at least one waveguide. Multiple light solid state sources may be arranged in strips. A waveguide system includes first and second body structures each positioned to illuminate at least a portion of a target surface. One or more waveguides may be arranged to illuminate a LCD panel.Type: ApplicationFiled: September 18, 2013Publication date: April 3, 2014Applicant: CREE, INC.Inventors: Nicholas W. Medendorp, JR., Norbert Hiller, Russell G. Villard
-
Publication number: 20140091333Abstract: A light emitting device includes a light emitting device body and a protective member. The light emitting device body has a flexible base member, at least one light emitting element arranged on the base member, and a sealing resin member sealing the light emitting element. The protective member is disposed adjacent to the sealing resin member on the base member. The protective member has a height greater than a height of the sealing resin member.Type: ApplicationFiled: September 25, 2013Publication date: April 3, 2014Applicant: NICHIA CORPORATIONInventors: Takeshi TAMURA, Tomonori OZAKI, Yasuo FUJIKAWA
-
Publication number: 20140091334Abstract: A method for producing an encapsulating sheet-covered semiconductor element includes a semiconductor element disposing step of disposing a plurality of semiconductor elements at spaced intervals to each other and an encapsulating sheet disposing step of disposing an encapsulating sheet so as to cover a plurality of the semiconductor elements and to form a space over the semiconductor elements adjacent to each other.Type: ApplicationFiled: October 1, 2013Publication date: April 3, 2014Applicant: NITTO DENKO CORPORATIONInventors: Hiroyuki KATAYAMA, Takashi KONDO, Yuki EBE, Munehisa MITANI, Yasunari OOYABU
-
Publication number: 20140091335Abstract: To provide a light emitting device that can maintain a desired light emission even when the tube is bent. The light emitting device of the present invention includes: a bendable tube extending in a first direction; a flexible board extending in the first direction and housed in the tube; and a plurality of light emitting elements mounted on the flexible board, wherein the flexible board comprises a plurality of protrusions aligned in the first direction on both sides in a second direction perpendicular to the first direction, on which the light emitting elements are mounted, and the plurality of protrusions are in contact with an inner wall of the tube such that the inner wall clamps the flexible board in a bent position.Type: ApplicationFiled: October 2, 2013Publication date: April 3, 2014Applicant: NICHIA CORPORATIONInventors: Yuji Satake, Tomoyuki Sato
-
Publication number: 20140091336Abstract: Electronic devices are provided that have components. A housing protrusion may be interposed between a display cover layer and display components. A button may have a button member. A support structure for a dome switch in the button may have a screw hole. A housing may have screw holes through which a screw passes. The screw may also pass through the screw hole of the support structure to hold the switch structure near the button member. A clip may have a spring. A metal plate may prevent the clip from becoming worn by the spring. A display may be mounted on a ledge in a device housing. The ledge may have gaps with supports and removed corners.Type: ApplicationFiled: December 2, 2013Publication date: April 3, 2014Applicant: Apple Inc.Inventors: Emery Sanford, Felix Alvarez, Brian Lynch
-
Publication number: 20140091337Abstract: A light-emitting device assembly includes a substrate, an optical semiconductor element mounted on the surface of the substrate, an encapsulating layer formed on the substrate surface to encapsulate the optical semiconductor element, and an electrode formed on the substrate surface to be electrically connected to the optical semiconductor element. On the substrate, only an encapsulating region and an electrode region are formed, the encapsulating region including the optical semiconductor element and being defined by the encapsulating layer, and the electrode region being defined by the electrode exposed from the encapsulating layer.Type: ApplicationFiled: December 4, 2013Publication date: April 3, 2014Applicant: NITTO DENKO CORPORATIONInventors: Yasunari OOYABU, Yoshihiko KITAYAMA, Munehisa MITANI
-
Publication number: 20140091338Abstract: Exemplary embodiments of the present invention relate to light emitting diodes including a plurality of light emitting cells on a substrate to be suitable for AC driving. The light emitting diode includes a substrate and a plurality of light emitting cell formed on the substrate. Each light emitting cell includes a first region at a boundary of the light emitting cell and a second region opposite to the first region. A first electrode pad is formed in the first region of the light emitting cell. A second electrode pad having a linear shape is disposed to face the first electrode pad while regionally defining a peripheral region together with the boundary of the second region. A wire connects the first electrode pad to the second electrode pad between two adjacent light emitting cells.Type: ApplicationFiled: December 6, 2013Publication date: April 3, 2014Applicant: Seoul Opto Device Co., Ltd.Inventors: Jong Kyu KIM, So Ra Lee, Ho Jun Suk, Jin Cheol Shin