Abstract: A high voltage metal-oxide-semiconductor transistor device includes a substrate having an insulating region formed therein, a gate covering a portion of the insulating region and formed on the substrate, a source region and a drain region formed at respective sides of the gate in the substrate, a body region formed in the substrate and partially overlapped by the gate, and a first implant region formed in the substrate underneath the gate and adjacent to the body region. The substrate and body region include a first conductivity type. The source region, the drain region, and the first implant region include a second conductivity type. The first conductivity type and the second conductivity type are complementary to each other.

Abstract: A thin-film transistor having a protection layer for a planarization layer. The protection layer prevents reduction of the planarization layer during an ashing process, thereby preventing the formation of a steeply tapered via hole through the planarization layer. In this manner, the via hole may be coated with a conductive element that may serve as a conductive path between a common electrode and the drain of the transistor.

Abstract: Embodiments of the present invention provide an array of fin-type transistors formed on top of an oxide layer. At least a first and a second of the fin-type transistors have their respective source and drain contacts being formed inside the oxide layer, with one of the contacts of the first fin-type transistor being conductively connected to one of the contacts of the second fin-type transistor by an epitaxial silicon layer, wherein the epitaxial silicon layer is formed on top of a first and a second fin of the first and second fin-type transistors respectively.

Abstract: There is provided a semiconductor device including a first channel-type first MISFET formed and a second channel-type second MISFET: a first source and a first drain of the first MISFET and a second source and a second drain of the second MISFET are made of the same conductive substance, and the work function ?M of the conductive substance satisfies at least one of relations respectively represented by (1) ?1<?M<?2+Eg2, and (2) |?M??1|?0.1 eV and |(?2+Eg2)??M|?0.1 eV, where ?1 represents an electron affinity of an N-type semiconductor crystal layer, and ?2 and Eg2 represent an electron affinity and a band gap of a crystal of a P-type semiconductor crystal layer.

Abstract: There is provided a semiconductor device including: a first source and a first drain of a first-channel-type MISFET formed on a first semiconductor crystal layer, which are made of a compound having an atom constituting the first semiconductor crystal layer and a nickel atom, a compound having an atom constituting the first semiconductor crystal layer and a cobalt atom, or a compound having an atom constituting the first semiconductor crystal layer, a nickel atom, and a cobalt atom; and a second source and a second drain of a second-channel-type MISFET formed on a second semiconductor crystal layer, which are made of a compound having an atom constituting the second semiconductor crystal layer and a nickel atom, a compound having an atom constituting the second semiconductor crystal layer and a cobalt atom, or a compound having an atom constituting the second semiconductor crystal layer, a nickel atom, and a cobalt atom.

Abstract: Aspects of the disclosure provide a multi-gate field effect transistor (FET) formed on a bulk substrate that includes an isolated fin and methods of forming the same. In one embodiment, the multi-gate FET includes: a plurality of silicon fin structures formed on the bulk substrate, each silicon fin structure including a body region, a source region, and a drain region; wherein a bottom portion the body region of each silicon fin structure includes a tipped shape to isolate the body region from the bulk substrate, and wherein the plurality of silicon fin structures are attached to the bulk substrate via at least a portion of the source region, or at least a portion of the drain region, or both.

Abstract: A method for fabricating a transistor device including the following processes. First, a semiconductor substrate having a first transistor region is provided. A low temperature deposition process is carried out to form a first tensile stress layer on a transistor within the first transistor region, wherein a temperature of the low temperature deposition process is lower than 300 degree Celsius (° C.). Then, a high temperature annealing process is performed, wherein a temperature of the high temperature annealing process is at least 150° C. higher than a temperature of the low temperature deposition process. Finally, a second tensile stress layer is formed on the first tensile stress layer, wherein the first tensile stress layer has a lower tensile stress than the second tensile stress layer.

Abstract: According to one embodiment, a pass gate provided between a data holding unit of an SRAM cell and a bit line, includes a first tunnel transistor and a first diode connected in series between the data holding unit and the bit line, and a second tunnel transistor and a second diode connected in series between the data holding unit and the bit line and connected in parallel to the first tunnel transistor and the first diode. Gate electrodes of the first tunnel transistor and the second tunnel transistor are connected to a word line. The first diode and the second diode have rectification in mutually opposite directions between the data holding unit and the bit line.

Abstract: It is therefore an object of the present invention to provide a method in which, in a semiconductor integrated circuit device, a plurality of transistors having wide-rangingly different Ioff levels are embedded together in a semiconductor device including transistors each using a non-doped channel. By controlling an effective channel length, a leakage current is controlled without changing an impurity concentration distribution in a transistor including a non-doped channel layer and a screen layer provided immediately under the non-doped channel layer.

Abstract: Provided is a semiconductor device including a first source and a first drain of a P-channel-type MISFET formed on a Ge wafer, which are made of a compound having a Ge atom and a nickel atom, a compound having a Ge atom and a cobalt atom, or a compound having a Ge atom, a nickel atom, and a cobalt atom, and a second source and a second drain of an N-channel-type MISFET formed on the Group III-V compound semiconductor, which are made of a compound having a Group III atom, a Group V atom, and a nickel atom, a compound having a Group III atom, a Group V atom, and a cobalt atom, or a compound having a Group III atom, a Group V atom, a nickel atom, and a cobalt atom.

Abstract: An electronic device, including an integrated circuit, can include a buried conductive region and a semiconductor layer overlying the buried conductive region, wherein the semiconductor layer has a primary surface and an opposing surface lying closer to the buried conductive region. The electronic device can also include a first doped region and a second doped region spaced apart from each other, wherein each is within the semiconductor layer and lies closer to primary surface than to the opposing surface. The electronic device can include current-carrying electrodes of transistors. A current-carrying electrode of a particular transistor includes the first doped region and is a source or an emitter and is electrically connected to the buried conductive region. Another current-carrying electrode of a different transistor includes the second doped region and is a drain or a collector and is electrically connected to the buried conductive region.

Abstract: A method of fabricating a semiconductor device having a different gate structure in each of a plurality of device regions is described. The method may include a replacement gate process. The method includes forming a hard mask layer on oxide layers formed on one or more regions of the substrate. A high-k gate dielectric layer is formed on each of the first, second and third device regions. The high-k gate dielectric layer may be formed directly on the hard mask layer in a first and second device regions and directly on an interfacial layer formed in a third device region. A semiconductor device including a plurality of devices (e.g., transistors) having different gate dielectrics formed on the same substrate is also described.

Abstract: In various embodiments, a power semiconductor housing having an integrated circuit is provided. The integrated circuit may include: a first gate pad and a second gate pad; and a first gate contact and a second gate contact; wherein the first gate pad is electrically connected to the first gate contact; wherein the second gate pad is electrically connected to the second gate contact. The integrated circuit may further include a drain-contact surface, wherein the drain-contact surface is connected to a drain contact; and a second drain contact, which is electrically connected to the drain-contact surface of the integrated circuit.

Abstract: A semiconductor device includes a gate dielectric layer and a gate electrode formed on the gate dielectric layer. The gate electrode includes a first metal layer, a second metal layer, and a third metal layer. The first metal layer includes an oxygen-gettering composition. The second metal layer includes oxygen. The third metal layer includes an interface with a polysilicon layer.

Abstract: A method for producing a semiconductor device includes a step of forming a first insulating film around a fin-shaped silicon layer and forming a pillar-shaped silicon layer in an upper portion of the fin-shaped silicon layer; a step of implanting an impurity into upper portions of the pillar-shaped silicon layer and fin-shaped silicon layer and a lower portion of the pillar-shaped silicon layer to form diffusion layers; and a step of forming a polysilicon gate electrode, a polysilicon gate line, and a polysilicon gate pad. The polysilicon gate electrode and the polysilicon gate pad have a larger width than the polysilicon gate line. After these steps follow a step of depositing an interlayer insulating film, exposing and etching the polysilicon gate electrode and the polysilicon gate line, and depositing a metal layer to form a metal gate electrode and a metal gate line, and a step of forming a contact.

Abstract: A first sensor section installed in an acceleration sensor employs a first elastic member which is elastically movable according to acceleration in the first and third directions and is stiff against acceleration in second direction so as to restrict elasticity in second direction. Thereby, the first sensor section is provided as a biaxial acceleration sensor which detects the first and third directional acceleration according to a change of electrostatic capacity between a first weight (i.e. the first movable electrode) made movable according to acceleration and the first fixed electrode. A second sensor section installed in the acceleration sensor is structurally identical with the first sensor section and configured to detect acceleration in second and third directions. Thereby, such combination of the first sensor section and the second sensor section constitutes a three-dimensional acceleration sensor.

Abstract: A pressure sensor component includes a MEMS component having at least one pattern element that is able to be deflected perpendicular to the component plane, which is equipped with at least one electrode of a measuring capacitor device, and an ASIC component having integrated circuit elements and at least one back end stack, at least one counter-electrode of the measuring capacitor device being developed in a metallization plane of the back end stack. The MEMS component is mounted on the back end pile of the ASIC component. The MEMS component includes at least one pressure-sensitive diaphragm pattern and is mounted on the ASIC component in such a way that the pressure-sensitive diaphragm pattern spans a cavity between the MEMS component and the back end stack of the ASIC component.

Abstract: A MEMS microphone system suited for harsh environments. The system uses an integrated circuit package. A first, solid metal lid covers one face of a ceramic package base that includes a cavity, forming an acoustic chamber. The base includes an aperture through the opposing face of the base for receiving audio signals into the chamber. A MEMS microphone is attached within the chamber about the aperture. A filter covers the aperture opening in the opposing face of the base to prevent contaminants from entering the acoustic chamber. A second metal lid encloses the opposing face of the base and may attach the filter to this face of the base. The lids are electrically connected with vias forming a radio frequency interference shield. The ceramic base material is thermally matched to the silicon microphone material to allow operation over an extended temperature range.

Abstract: Bulk acoustic wave filters and/or bulk acoustic resonators integrated with CMOS processes, methods of manufacture and design structures are disclosed. The method includes forming at least one beam comprising amorphous silicon material and providing an insulator material over and adjacent to the amorphous silicon beam. The method further includes forming a via through the insulator material and exposing a material underlying the amorphous silicon beam. The method further includes providing a sacrificial material in the via and over the amorphous silicon beam. The method further includes providing a lid on the sacrificial material and over the insulator material. The method further includes venting, through the lid, the sacrificial material and the underlying material to form an upper cavity above the amorphous silicon beam and a lower cavity below the amorphous silicon beam, respectively.

Abstract: A sensor module and semiconductor chip. One embodiment provides a carrier. A semiconductor chip includes a first recess and a second recess and a main surface of the semiconductor chip. The semiconductor chip is mounted to the carrier such that the first recess forms a first cavity with the carrier and the second recess forms a second cavity with the carrier. The first cavity is in fluid connection with the second cavity.

Abstract: The disclosed embodiments provide sensitive pixel arrays formed using solvent-assisted or unassisted release processes. Exemplary devices include detectors arrays, tunable optical instruments, deflectable mirrors, digital micro-mirrors, digital light processing chips, tunable optical micro-cavity resonators, acoustic sensors, acoustic actuators, acoustic transducer devices and capacitive zipper actuators to name a few.

Abstract: The present invention provides a method and apparatus for fabricating piezoresistive polysilicon on a substrate by low-temperature metal induced crystallization by: (1) providing the substrate having a passivation layer; (2) performing, at or near room temperature in a chamber without breaking a vacuum or near-vacuum within the chamber, the steps of: (a) creating a metal layer on the passivation layer, and (b) creating an amorphous silicon layer on the metal layer, wherein the metal layer and the amorphous silicon layer have approximately the same thickness; (3) annealing the substrate, the passivation layer, the metal layer and the amorphous silicon layer at a temperature equal to or less than 600° C. and a period of time equal to or less than three hours to form a doped polysilicon layer below a residual metal layer; and (4) removing the residual metal layer to expose the doped polysilicon layer.

Abstract: One embodiment includes a metal layer including first and second metal portions; a ferromagnetic layer including a first ferromagnetic portion that directly contacts the first metal portion and a second ferromagnetic portion that directly contacts the second metal portion; and a first metal non-magnetic interconnect coupling the first ferromagnetic portion to the second ferromagnetic portion. The spin interconnect conveys spin polarized current suitable for spin logic circuits. The interconnect may be included in a current repeater such as an inverter or buffer. The interconnect may perform regeneration of spin signals. Some embodiments extend spin interconnects into three dimensions (e.g., vertically across layers of a device) using vertical non-magnetic metal interconnects.

Abstract: In one embodiment, there is provided a non-volatile magnetic memory cell. The non-volatile magnetic memory cell comprises a switchable magnetic element; and a word line and a bit line to energize the switchable magnetic element; wherein at least one of the word line and the bit line comprises a magnetic sidewall that is discontinuous.

Abstract: The present invention generally relates to a radiation sensor for use particularly in, but by no means exclusively, in measuring radiation dose in photon or electron fields such as for radiation medicine, including radiotherapy and radiation based diagnosis. According to the present invention, there is provided a semiconductor radiation detector comprising a radiation sensitive detector element arranged such that it forms a continuous radiation sensitive portion having surfaces oriented in at least two non-parallel directions.

Abstract: A semiconductor apparatus includes a conductive member penetrating through a first semiconductor layer, a first insulator layer, and a third insulator layer, and connecting a first conductor layer with a second conductor layer. The conductive member has a first region containing copper, and a second region containing a material different from the copper is located at least between a first region and the first semiconductor layer, between the first region and the first insulator layer, and between the first region and the third insulator layer. A diffusion coefficient of the copper to a material is lower than a diffusion coefficient of the copper to the first semiconductor layer and a diffusion coefficient of the copper to the first insulator layer.

Abstract: A solid-state imaging apparatus includes a semiconductor substrate, an upper layer film, and on-chip lenses. On the semiconductor substrate, a plurality of pixels are formed. The upper layer film is laminated on the semiconductor substrate. The on-chip lenses are formed on the upper layer film so as to correspond to the respective pixels. A pupil correction amount of one of the on-chip lenses is changed depending on a distance between a center of a pixel area and the on-chip lens, and depending on a film thickness of the upper layer film at a position of the on-chip lens on the upper layer film.

Abstract: A photoelectric conversion apparatus has multiple photoelectric converting units disposed in a semiconductor substrate, and isolation portions disposed in the semiconductor substrate. Each photoelectric converting unit includes a second semiconductor region, a third semiconductor region, disposed below the second semiconductor region and a fourth semiconductor region disposed below the third semiconductor region.

Abstract: A method of depositing a low refractive index coating on a photo-active feature on a substrate comprises forming a substrate having one or more photo-active features thereon and placing the substrate in a process zone. A deposition gas is energized in a remote gas energizer, the deposition gas comprising a fluorocarbon gas and an additive gas. The remotely energized deposition gas is flowed into the process zone to deposit a low refractive index coating on the substrate.

Abstract: A color filter includes: a red pixel in which a transmittance of a light having a wavelength of 400 nm is 15% or less, and a transmittance of a light having a wavelength of 650 nm is 90% or more; a green pixel in which a transmittance of a light having a wavelength of 450 nm is 5% or less, and a transmittance of a light having a wavelength within a range of from 500 nm to 600 nm is 90% or more; and a blue pixel in which a transmittance of a light having a wavelength of 450 nm is 85% or more, a transmittance of a light having a wavelength of 500 nm is from 10% to 50%, and a transmittance of a light having a wavelength of 700 nm is 10% or less.

Abstract: The present invention relates to an optical filter, a solid-state imaging element and an imaging device lens which contain a near infrared ray absorbing layer having a specific near infrared ray absorbing dye dispersed in a transparent resin having a refractive index of 1.54 or more, and also relates to an imaging device containing the solid-state imaging element or the imaging device lens. The near infrared ray absorbing layer has a transmittance of visible light of from 450 to 600 nm of 70% or more, a transmittance of light in a wavelength region of from 695 to 720 nm of not more than 10%, and an amount of change of transmittance of not more than ?0.

Abstract: A monolithically integrated sensor is disclosed in the form of light detector(s), visible light emitter(s) and associated control circuit(s) monolithically integrated on a single silicon microchip. The detector structures consist of p-i-n photodiode structures, both diffused into and deposited on the surface of the silicon substrate. The emitter structures consist of III-V compound semiconductor hetero-epitaxial layers deposited on the surface of the silicon substrate. The control circuits are fabricated using traditional CMOS high volume manufacturing techniques. The sensor assembly is designed to be processed in a traditional CMOS wafer fab. The sensor assembly is further designed to be packaged at the wafer level.

Abstract: A solid-state image pickup element is provided with a semiconductor substrate having a photosensitive region, a plurality of first electrode pads arrayed on a principal face of the semiconductor substrate, a plurality of second electrode pads arrayed in a direction along a direction in which the plurality of first electrode pads are arrayed, on the principal face of the semiconductor substrate, and a plurality of interconnections connecting the plurality of first electrode pads and the plurality of second electrode pads in one-to-one correspondence. The plurality of interconnections connect the first and second electrode pads so that each interconnection connects the first electrode pad and the second electrode pad in a positional relation of line symmetry with respect to a center line perpendicular to the array directions of the plurality of first and second electrode pads.

Abstract: A device and a method of forming the same are disclosed. The device comprises a substrate and a thin film. The substrate is characterized by a first coefficient of thermal expansion. The thin film is attached to a surface of the substrate, and is characterized by a second coefficient of thermal expansion. The thin film includes first and second layers in states of compression, and a third layer in a state of tension, the third layer being positioned between the first and second layers. The thin film is in a net state of tension within a temperature range.

Abstract: A thermal diode for a photosensor of a thermal imaging camera includes a semiconductor substrate having a surface and two doped structures set apart from each other on the surface. Furthermore, a device is provided for influencing a current between the first and the second structure, in order to reduce a current density in an area near to the surface and to increase it in an area far from the surface. In addition, a topology having an even absorption layer is proposed. The measures proposed have the aim of realizing a low-noise diode for thermal applications.

Abstract: A compound semiconductor device includes: a compound semiconductor layer; a protective insulating film that covers a top of the compound semiconductor layer and has an opening formed thereon; and an electrode that fills the opening, that is brought into contact with the compound semiconductor layer, and that is formed on the protective insulating film, in which an orientation state of a contact portion between the electrode and the compound semiconductor layer and an orientation state of a contact portion between the electrode and the protective insulating film are the same.

Abstract: In a semiconductor integrated circuit device including fuse elements for performing laser trimming processing, a dummy fuse formed of a first polycrystalline Si film is formed between the fuse elements formed of a second polycrystalline Si film, and a nitride film is formed on the dummy fuse. In this manner, the step difference of an interlayer film caused by the presence and absence of the fuse element formed of the polycrystalline Si film is eliminated, to thereby prevent SOG films having moisture-absorption characteristics on an inner surface of a fuse opening region and on an internal element side from connecting to each other.

Abstract: A system-on-chip (SOC) device comprises a first capacitor in a first region, a second capacitor in a second region, and may further comprise a third capacitor in a third region, and any additional number of capacitors in additional regions. The capacitors may be of different shapes and sizes. A region may comprise more than one capacitor. Each capacitor in a region has a top electrode, a bottom electrode, and a capacitor insulator. The top electrodes of all the capacitors are formed in a common process, while the bottom electrodes of all the capacitors are formed in a common process. The capacitor insulator may have different number of sub-layers, formed with different materials or different thickness. The capacitors may be formed in an inter-layer dielectric layer or in an inter-metal dielectric layer. The regions may be a mixed signal region, an analog region, a radio frequency region, a dynamic random access memory region, and so forth.

Abstract: An electrical fuse is provided. The electrical fuse includes an anode formed on a substrate, a cathode formed on the substrate, a fuse link connecting the anode and the cathode to each other, a first contact formed on the anode, and a second contact formed on the cathode and arranged closer to the fuse link than the first contact.

Abstract: A package structure including a capacitor mounted within a cavity in the package substrate is disclosed. The package structure may additionally include a die mounted to a die side surface of the package substrate, and the opposing land side surface of the package substrate may be mounted to a printed circuit board (PCB). The capacitor may be mounted within a cavity formed in the die side surface of the package substrate or the land side surface of the package substrate. Mounting a capacitor within a cavity may reduce the form factor of the package. The die may be mounted within a cavity formed in the die side surface of the package substrate. Solder balls connecting the package to the PCB may be mounted within one or more cavities formed in one or both of the package substrate and the PCB.

Abstract: A memory device has multiple dielectric barrier regions. A memory device has multiple barrier regions that provide higher or lower current-voltage slope compared to a memory device having a single barrier region. The device also has electrode regions that provide further control over the current-voltage relationship.

Abstract: The semiconductor device according to the present invention comprises a plurality of actually operative capacitors formed, arranged in an actually operative capacitor part over a semiconductor substrate and each including a lower electrode, a ferroelectric film and an upper electrode; a plurality of dummy capacitors formed, arranged in a dummy capacitor part provided outside of the actually operative capacitor part over the semiconductor substrate and each including the lower electrode, the ferroelectric film and the upper electrode; a plurality of interconnections respectively formed on said plurality of the actually operative capacitors and respectively connected to the upper electrodes of said plurality of the actually operative capacitors; and the interconnections respectively formed on said plurality of the dummy capacitors.

Abstract: A semiconductor device manufacturing method includes forming a first capacitance film formed on the lower electrode; forming an intermediate electrode in a first region on the first capacitance film, wherein the first capacitance is interposed between the intermediate electrode and the lower electrode; forming a second capacitance film on the intermediate electrode to be interposed between the first capacitance film and the second capacitance film; and forming an upper electrode, wherein at least a portion of the second capacitance film is interposed between the upper electrode and the intermediate electrode; the upper electrode extending to a second region outside the first region, and having at least the first capacitance film interposed between the upper electrode and the lower electrode in the second region.

Abstract: A ceramic powder for use in a grain boundary insulated semiconductor ceramic that has an excellent ESD withstanding voltage, a semiconductor ceramic capacitor using the ceramic powder, and a manufacturing method therefor. The ceramic powder for use in a SrTiO3 based grain boundary insulated semiconductor ceramic has a specific surface area of 4.0 m2/g or more and 8.0 m2/g or less, and a cumulative 90% grain size D90 of 1.2 ?m or less.

Abstract: There is provided a method of producing a semiconductor wafer, including: forming a compound semiconductor layer on a base wafer by epitaxial growth; cleansing a surface of the compound semiconductor layer by means of a cleansing agent containing a selenium compound; and forming an insulating layer on the surface of the compound semiconductor layer. Examples of the selenium compound include a selenium oxide. Examples of the selenium oxide include H2SeO3. The cleansing agent may further contain one or more substances selected from the group consisting of water, ammonium, and ethanol. When the surface of the compound semiconductor layer is made of InxGa1-xAs (0?x?1), the insulating layer is preferably made of Al2O3, and Al2O3 is preferably formed by ALD.

Abstract: Some embodiments include methods of patterning a base. First and second masking features are formed over the base. The first and second masking features include pedestals of carbon-containing material capped with silicon oxynitride. A mask is formed over the second masking features, and the silicon oxynitride caps are removed from the first masking features. Spacers are formed along sidewalls of the first masking features. The mask and the carbon-containing material of the first masking features are removed. Patterns of the spacers and second masking features are transferred into one or more materials of the base to pattern said one or more materials. Some embodiments include patterned bases.

Abstract: The present disclosure relates to a method (10) for block-copolymer lithography. This method comprises the step of obtaining (12) a self-organizing block-copolymer layer comprising at least two polymer components having mutually different etching resistances, and the steps of applying at least once each of first plasma etching (14) of said self-organizing block-copolymer layer using a plasma formed from a substantially ashing gas, and second plasma etching (16) of said self-organizing block-copolymer layer using plasma formed from a pure inert gas or mixture of inert gases in order to selectively remove a first polymer phase. A corresponding intermediate product also is described.

Abstract: An epitaxial structure is provided. The epitaxial structure includes a substrate, an first epitaxial layer, a second epitaxial layer, a first carbon nanotube layer and a second carbon nanotube layer. The first epitaxial layer is located on the substrate. The first carbon nanotube layer is located between the substrate and the first epitaxial layer. The second epitaxial layer is located on the first epitaxial layer. The second carbon nanotube layer is located between the first epitaxial layer and the second epitaxial layer.

Abstract: A package includes a semiconductor device including an active surface having a contact pad. A redistribution layer (RDL) structure includes a first post-passivation interconnection (PPI) line electrically connected to the contact pad and extending on the active surface of the semiconductor device. An under-bump metallurgy (UBM) layer is formed over and electrically connected to the first PPI line. A seal ring structure extends around the upper periphery of the semiconductor device. The seal ring structure includes a seal layer extending on the same level as at least one of the first PPI line and the UBM layer.

Abstract: A semiconductor device including a conductive element and an interface surface fabricated atop the conductive element, and a method for fabricating such a device are described. An exemplary device includes a substrate having a conductive element and a metal layer fabricated atop the conductive element. An oxide layer is fabricated atop the metal layer, thus forming an interface surface. During polishing (e.g., planarization), in which an upper portion of the interface surface is removed, the presence of the interface surface greatly reduces the loading on the conductive element. A second substrate fabricated using the same process may be stacked atop the first substrate and bonded using a hybrid bonding process.