Abstract: The invention relates to a method for correcting distortions introduced by the projection system (106) of a TEM. As known to the person skilled in the art distortions may limit the resolution of a TEM, especially when making a 3D reconstruction of a feature using tomography. Also when using strain analysis in a TEM the distortions may limit the detection of strain. To this end the invention discloses a detector equipped with multipoles (152), the multipoles warping the image of the TEM in such a way that distortions introduced by the projection system are counteracted. The detector may further include a CCD or a fluorescent screen (151) for detecting the electrons.

Abstract: A scanning electron microscope and an optical-condition setting method are provided. The optical condition allows the suppression of a lowering in the measurement and inspection accuracy caused by the influence of electrification, even if there are a large number of measurement and inspection points. A pattern on a sample is measured based on the detection of electrons by scanning the sample surface with an electron beam. A change in measurement values relative to the number of measurements is determined from the measurement values at a plurality of measurement points on the sample, and the sample-surface electric field is controlled so that the inclination of the change becomes equal to zero, or becomes close to zero.

Abstract: A monolithic sensor for detecting infrared and visible light according to an example includes a semiconductor substrate and a semiconductor layer coupled to the semiconductor substrate. The semiconductor layer includes a device surface opposite the semiconductor substrate. A visible light photodiode is formed at the device surface. An infrared photodiode is also formed at the device surface and in proximity to the visible light photodiode. A textured region is coupled to the infrared photodiode and positioned to interact with electromagnetic radiation.

Abstract: In an evaluation device for determining a measurement value at a component, power is supplied to the component during readout of the measurement value. A controller serves to determine the power supplied to the component during the readout. The measurement value determined by the reader is corrected by a compensator while using the power determined by the controller, so as to obtain a corrected measurement value freed from any effects caused by the power supplied.

Abstract: Various embodiments of an optical proximity sensor and corresponding circuits and methods for measuring small AC signal currents arising from the detection of pulsed AC light signals emitted by a light emitter and reflected from an object to detected in the presence of larger ambient light DC current signals are disclosed. Circuits and corresponding methods are described that improve the dynamic range, sensitivity and detection range of an optical proximity sensor by cancelling the contributions of DC current signals arising from ambient light signals that otherwise would dominate the detected small AC signal currents. The DC signal cancellation occurs in a differential amplifier circuit before small AC signal currents are provided to an analog-to-digital converter. The circuits and methods may be implemented using conventional CMOS design and manufacturing techniques and processes.

Abstract: A moisture detection system for characterizing moisture on a sample includes a generator adapted to emit an incident beam of radiation from the terahertz spectrum of frequency onto the sample; a detector adapted to receive a reflected beam of radiation from the sample and measure radiation in the reflected beam; and a controller adapted to correlate the radiation in the reflected beam with an amount of moisture on the sample.

Abstract: System flow path designs that minimize the impact of gas diffusion sources and sinks. By reducing the magnitude of parasitic sources and sinks, lower rates of photosynthesis and transpiration can be more accurately measured, e.g., without the need for extensive empirical compensation. The gas exchange analysis system includes a sample chamber having an inlet and an outlet, wherein the internal surface(s) of the chamber defining the measurement volume are metal plated. The system also typically includes a source of gas coupled with the inlet of the sample chamber, and a gas analyzer coupled with the outlet of the sample chamber and configured to measure a concentration of one or more gases exiting the chamber, whereby the metal plated internal surface(s) of the chamber reduces sorption of the one or more gases within the chamber.

Abstract: The present disclosure discloses, in one arrangement, a single crystalline iodide scintillator material having a composition of the formula AM1?xEuxI3, A3M1?xEuxI5 and AM2(1?x)Eu2xI5, wherein A consists essentially of any alkali metal element (such as Li, Na K, Rb, Cs) or any combination thereof, M consists essentially of Sr, Ca, Ba or any combination thereof, and 0?x?1. In another arrangement, the above single crystalline iodide scintillator material can be made by first synthesizing a compound of the above composition and then forming a single crystal from the synthesized compound by, for example, the Vertical Gradient Freeze method. Applications of the iodide scintillator materials include radiation detectors and their use in medical and security imaging.

Abstract: One embodiment disclosed relates a method of detecting a patterned electron beam. The patterned electron beam is focused onto a grating with a pattern that has a same pitch as the patterned electron beam. Electrons of the patterned electron beam that pass through the grating un-scattered are detected. Another embodiment relates to focusing the patterned electron beam onto a grating with a pattern that has a second pitch that is different than a first pitch of the patterned electron beam. Electrons of the patterned electron beam that pass through the grating form a Moiré pattern that is detected using a position-sensitive detector. Other embodiments, aspects and features are also disclosed.

Abstract: A combined method for detecting and positioning high energy radiation, belonging to the radiation detection and imaging technology field, comprises: arranging scintillation crystals for capturing high energy radiation into a regular array; assembling a plurality of PMTs with different sizes into a combined array where smaller PMT is located at the center of larger PMTs; forming a combined high energy radiation detector by bonding the scintillation crystal array and the combined PMT array with an optical adhesive; when a high energy gamma ray is incident into the scintillation crystal array, scintillation light is generated and amplified by the combined PMT array into electrical pulse signals; then obtaining the position coordinates, energy and time of the high energy gamma ray by processing the electrical pulse signals. The method provides more effective and uniform high-energy radiation detection, has higher spatial and energy resolution, and simultaneously has high-speed response.

Abstract: Systems, devices, and methods are described including implantable radiation sensing devices having exposure determination devices that determines cumulative exposure information based on the at least one in vivo measurand.

Abstract: A scintillator-photosensor sandwich is generated by gluing a first support frame onto an adhesive layer (covered with a protective film on the side facing the adhesive layer, the first frame having a size that (in terms of area) surrounds the scintillator-photosensor sandwich to be produced. The first support frame is placed onto a flat base that supports a first function layer (either a scintillator layer or a photosensor layer). The adhesive layer supported on the first support frame and the first function layer are laminarly assembled. The protective film is removed from the adhesive layer and a second function layer (the other of the scintillator layer or the photosensor layer not used as the first function layer) is assembled with the first function layer with the interposed adhesive layer.

Abstract: An ion supply device includes an ion generator for generating ions for removing static electricity, a carrier gas supply unit for supplying to the ion generator a carrier gas for carrying the ions generated in the ion generator, and an ion supply nozzle for blowing the ions and the carrier gas from the ion generator through a blow-off opening toward an electricity removal target from which static electricity is to be removed. A slit is provided at the blow-off opening and has an increased width as the slit gets distant from the electricity removal target. The ion supply nozzle includes an internal flow path and a plurality of internal fins provided at a portion of the internal flow path near the blow-off opening so that the ions and the carrier gas blown from the slit is uniformly distributed along a lengthwise direction of the slit.

Abstract: A UV disinfection system for waste water and drinking water, includes a number of UV radiators arranged in cladding tubes, the cladding tubes being configured essentially symmetrically to a longitudinal axis, as well as a cleaning device for the cladding tubes. The cleaning device includes at least one cleaning ring for each cladding tube, which surrounds the cladding tube, the at least one cleaning ring having a scraper ring resting against the cladding tube, at least one drive for driving the cleaning ring in the direction of the longitudinal axis, and supply provisions for supplying pressurized fluid under elevated pressure from a pressure source to the scraper ring are provided, wherein pressure may be applied onto the scraper ring from the pressure source in the direction of the cladding tube.

Abstract: An apparatus and method for modifying the organoleptic properties of a beverage, such as wine in a bottle, said apparatus having a least one light-source, said light-source applying peak wavelengths at intensities and time durations optimal for modifying said beverage's organoleptic properties with a highly reflective inner surface, a translucent air flow baffle, a translucent liquid barrier, and a controlled oxygen concentration in the bottle headspace.

Abstract: A device and associated methods for using surface electromagnetic waves (SEWs) generated at the surface of photonic band gap multilayers (PBGMs) in place of surface plasmons (SPs) in metal films. One device is a photonic circuit comprising a multilayer apparatus to generate surface electromagnetic waves, wherein the surface electromagnetic waves comprise the signal medium within the circuit. The multilayer apparatus comprises a prism with a dielectric multilayer deposited on one side.

Abstract: A digitizer system includes a substrate with indicia having photoluminescent features that uniquely define local areas of the substrate. A sensor device, such as a stylus, may sense radiation emitted from the features, and a controller may determine therefrom the location of the stylus relative to the substrate.

Abstract: One or more techniques and/or systems are described herein for handling an examination surface for radiology or other operations. That is, an examination surface support structure can be integrally coupled with a support component of a radiology apparatus so that an examination surface and an object optionally placed thereon are supported during an operation. An examination surface transport component can be docked with an examination surface docking component that is operably coupled with the examination surface support structure so that the examination surface can be exchanged between the transport component and the radiology apparatus. An examination surface transit component that is operably coupled with the examination surface support structure can engage the examination surface in order to move the examination surface into and out of an operation region of the apparatus, such as during a scanning or dosage operation.

Abstract: An imaging method and apparatus for forming images of substantially the same area on a sample for defect inspection within the area are disclosed. The disclosed method includes line-scanning the charged particle beam over the area to form a plurality of n*Y scan lines by repeatedly forming a group of n scan lines for Y times. During the formation of each group of n scan lines, an optical beam is, from one line scan to another, selectively illuminated on the area prior to or simultaneously with scanning of the charged particle beam. In addition, during the formation of each group of n scan lines, a condition of illumination of the optical beam selectively changes from one line scan to another. The conditions at which individual n scan lines are formed are repeated for the formation of all Y groups of scan lines.

Abstract: A workpiece scanning system is provided having a scan arm that rotates about a first axis and a chilled end effector rotatably coupled to the scan arm about a second axis for selectively securing a workpiece. The chilled end effector has a clamping plate and one or more cooling mechanisms for cooling the clamping plate. A bearing is positioned along the second axis and rotatably couples the end effector to the scan arm, and a seal is positioned along the second axis to provide a pressure barrier between an external environment and an internal environment. One or more of the bearing and seal can have a ferrofluid associated therewith. A heater assembly is positioned proximate to the bearing and seal, wherein the heater assembly selectively provides a predetermined amount of heat to the bearing and seal, therein increasing a propensity of the end effector to rotate about the second axis.

Abstract: A vertical profile, a horizontal profile, and an integrated current value of an ion beam are measured by a plurality of stationary beam measuring instruments and a movable or stationary beam measuring device. At a beam current adjustment stage before ion implantation, a control device simultaneously performs at least one of adjustment of a beam current to a preset value of the beam current, adjustment of a horizontal beam size that is necessary to secure uniformity of the horizontal ion beam density, and adjustment of a vertical beam size that is necessary to secure the uniformity of the vertical ion implantation distribution on the basis of a measurement value of the stationary beam measuring instruments and the movable or stationary beam measuring device.

Abstract: The present invention provides a plasma ion beam system that includes multiple gas sources and that can be used for performing multiple operations using different ion species to create or alter submicron features of a work piece. The system preferably uses an inductively coupled, magnetically enhanced ion beam source, suitable in conjunction with probe-forming optics sources to produce ion beams of a wide variety of ions without substantial kinetic energy oscillations induced by the source, thereby permitting formation of a high resolution beam.

Abstract: An exposure apparatus which draws a pattern on a substrate with a charged particle beam is disclosed. The exposure apparatus includes a blanker which controls, in accordance with a dose pattern including a plurality of pulses, whether to allow a charged particle beam to strike the substrate, and a controller which executes calibration for correcting the dose pattern to obtain a pattern having the target line width.

Abstract: A method that includes implantation of dopants while a III-nitride body is being grown on a substrate, and an apparatus for the practice of the method.

Abstract: A guide laser beam that has an optical axis and a beam diameter substantially equivalent to those of a driver pulsed laser beam is introduced into an amplification system that amplifies a laser beam that is output from a driver laser oscillator. The guide laser beam is output from a laser device as a continuous light, and is introduced into a light path of the driver pulsed laser beam via a guide laser beam introduction mirror. A sensor detects an angle (a direction) of a laser beam and a variation of a curvature of a wave front. A wave front correction controller outputs a signal to a wave front correction part based on a measured result of a sensor. The wave front correction part corrects a wave front of a laser beam to be a predetermined wave front according to an instruction from the wave front correction controller.

Abstract: A device, system and method for identifying an object. The device comprises an identification badge comprising a surface at least partially reflective to infrared light and having an insignia thereon, and a source of infrared light co-located with the badge and comprising at least one infrared light emitting LED. The source and the badge are both secured to the object and the source is positioned relative to the badge such that the light emitted from the at least one infrared LED falls on the reflective surface.

Abstract: A nonvolatile memory element according to the present disclosure includes: a variable resistance element including a first electrode layer, a second electrode layer, and a variable resistance layer which is located between the first electrode layer and the second electrode layer and has a resistance value that reversibly changes based on an electrical signal applied between the first electrode layer and the second electrode layer; and a fixed resistance layer having a predetermined resistance value and stacked together with the variable resistance element. The variable resistance layer includes (i) a first transition metal oxide layer which is oxygen deficient and (ii) a second transition metal oxide layer which has a higher oxygen content atomic percentage than the first transition metal oxide layer. The predetermined resistance value ranges from 70? to 1000? inclusive.

Abstract: A resistance variable memory device includes: a first electrode; a second electrode; a resistance variable layer interposed between the first electrode and the second electrode; and nano particles that are disposed in the resistance variable layer and have a lower dielectric constant than the resistance variable layer.

Abstract: The present invention relates to the technical field of memories, and in particular to a highly-consistent resistive memory and method of fabricating the same. The resistive memory comprises: a lower electrode which is formed in a first dielectric layer by patterning; a second dielectric layer formed on the lower electrode and the first dielectric layer and provided with an opening for exposing the lower electrode to perform patterning; an edge wall formed in the opening of the second dielectric layer for covering a border area of the lower electrode and the first dielectric layer so that only the middle area of the lower electrode is partially or totally exposed; a storage medium layer formed by performing oxidization with the second dielectric layer and the edge wall as mask; and an upper electrode. The resistive memory exhibits good consistency and high reliability; moreover, unit size is mall, which is advantageous for improving storage characteristic.

Abstract: A resistive memory device capable of suppressing disturbance between cells and a fabrication method thereof are provided. The resistive memory device includes a word line formed, in a first direction, on a semiconductor substrate, lower access structures, each having a pillar shape, formed on the word line, a first insulating layer formed around an outer circumference of each of the lower access structures, a heat-absorption layer formed on a surface of each of the to heat-absorption layers, a variable resistive material formed on the lower access structures, and an upper electrode formed on each variable resistive material.

Abstract: A field emission device is configured as a heat engine. Different embodiments of the heat engine may have different configurations that may include a cathode, gate, suppressor, and anode arranged in different ways according to a particular embodiment. Different embodiments of the heat engine may also incorporate different materials in and/or proximate to the cathode, gate, suppressor, and anode.

Abstract: A light-emitting device is disclosed. The light-emitting device comprises an epitaxial structure comprising a lower cladding layer of first conductivity type, an active layer comprising InGaN or AlGaInN on the lower cladding layer, and an upper cladding layer of second conductivity type on the active layer; a tunneling structure on the epitaxial structure comprising a first tunneling layer of second conductivity type with a doping concentration greater than 6×1019/cm3 on the upper cladding layer, and a second tunneling layer of first conductivity type with a doping concentration greater than 6×1019/cm3 on the first tunneling layer; and a current spreading layer of first conductivity type comprising AlInN on the tunneling structure.

Abstract: A semiconductor light emitting device includes a first layer including at least one of n-type GaN and n-type AlGaN; a second layer including Mg-containing p-type AlGaN; and a light emitting section provided between the first and second layers. The light emitting section includes barrier layers of Si-containing AlxGa1-x-yInyN (0?x, 0?y, x+y?1), and a well layer provided between the barrier layers and made of GaInN or AlGaInN. The barrier layers have a nearest barrier layer nearest to the second layer among the barrier layers and a far barrier layer. The nearest barrier layer includes a first portion made of Si-containing AlxGa1-x-yInyN (0?x, 0?y, x+y?1), and a second portion provided between the first portion and the second layer and made of AlxGa1-x-yInyN (0?x, 0?y, x+y?1). The Si concentration in the second portion is lower than those in the first portion and in the far barrier layer.

Abstract: In one aspect, a FET device is provided. The FET device includes a substrate; a semiconductor material on the substrate; at least one gate on the substrate surrounding a portion of the semiconductor material that serves as a channel region of the device, wherein portions of the semiconductor material extending out from the gate serve as source and drain regions of the device, and wherein the source and drain regions of the device are displaced from the substrate; a planarizing dielectric on the device covering the gate and the semiconductor material; and contacts which extend through the planarizing dielectric and surround the source and drain regions of the device.

Abstract: A high performance field-effect transistor includes a substrate, a nanomaterial thin film disposed on the substrate, a source electrode and a drain electrode formed on the nanomaterial thin film, and a channel area defined between the source electrode and the drain electrode. A unitary self-aligned gate electrode extends from the nanomaterial thin film in the channel area between the source electrode and the drain electrode, the gate electrode having an outer dielectric layer and including a foot region and a head region, the foot region in contact with a portion of the nanomaterial thin film in the channel area. A metal layer is disposed over the source electrode, the drain electrode, the head region of the gate electrode, and portions of the nanomaterial thin film proximate the source electrode and the drain electrode in the channel area.

Abstract: A functional molecular element exhibiting its function under the operation of an electrical field is provided. A compound is used in which a pendant molecule, formed by 4-pentyl-4?-cyanobiphenyl, exhibiting positive dielectric constant anisotropy or a dipole moment along the direction of the long axis of the molecule, is covalently bonded to an electrically conductive linear or film-shaped principal-axis molecule having a conjugated system. The pendant molecule is changed in its orientation on application of an electrical field to change the conformation to switch the electrical conductivity of the electrically conductive principal-axis molecule.

Abstract: Provided is an organic light emitting diode which can easily control color coordinates and improve a device's life span characteristic by using an auxiliary dopant having a higher band gap energy than that of a host, and preferably, having an absolute value of the highest occupied molecular orbital energy level equal to or higher than that of the host, or an absolute value of the lowest unoccupied molecular orbital energy level equal to or lower than that of the host. The organic light emitting diode includes a first electrode, an emission layer disposed on the first electrode and including a host, an emitting dopant and an auxiliary dopant, and a second electrode disposed on the emission layer. Here, the auxiliary dopant has a higher band gap energy than the host. A method of fabricating the organic light emitting diode is provided.

Abstract: The present invention relates to a biomolecule-based electronic device in which the biomolecule with redox potential is directly immobilized on the substrate. The present invention enables to excellently exhibit the capability of a protein-based bio-memory device in which it is preferable to use the substrate on which cysteine-introduced recombinant proteins are effectively immobilized and a self-assembled layer (SAM) is fabricated. It becomes realized that a redox potential is regulated using intrinsic redox potential of the protein dependent on applied voltage. The present invention provides a novel operating method in which three potentials are applied throughout four steps. The present invention has some advantages of fabricating a protein layer in a convenient manner and inducing electron transfer by fundamental electrochemical or electronic operation.

Abstract: An object of the invention is to provide a polymer compound having a high hole transport capacity, excellent in electrochemical stability, and suitable to film formation according to a wet film formation method. Another object of the invention is to provide an organic electroluminescence element having a high current efficiency, a low drive voltage, and a long derive lifetime. The polymer compound has a crosslinking group bonding to the arylamine moiety in the repeating unit via at least one single bond therebetween.

Abstract: An organic photoelectric semiconductor device including organic group VA salts in an organic salt-containing layer and a method for manufacturing the same are provided. The organic photoelectric semiconductor device includes: a first electrode; an organic active layer disposed over the first electrode; an organic salt-containing layer disposed over the organic active layer, where the organic salt-containing layer includes quaternary group VA salts of cations represented by the following formula (I) or derivatives thereof and anions; and a second electrode, disposed over the organic salt-containing layer, where, X, R1, R2, R3 and R4 are defined the same as the specification. Accordingly, the present invention can enhance the transmission of electrons and thus enhances the performance of devices.

Abstract: Disclosed is a method of manufacturing an organic semiconductor thin film for an organic thin film transistor from a blend of organic semiconductor/insulating polymer. The organic semiconductor thin film is configured such that organic semiconductor nanofibrils are dispersed in the form of a network in the insulating polymer layer. This organic semiconductor thin film is formed by dissolving the blend of organic semiconductor/insulating polymer in a marginal solvent of the organic semiconductor or mixed solvent thus preparing a blend solution, which is then applied while adjusting the solubility of the solution. An organic thin film transistor using the organic semiconductor thin film is also provided. The blend thin film of organic semiconductor/insulating polymer containing only about 3 wt % of the organic semiconductor exhibits electrical properties equal to those of a thin film composed exclusively of an organic semiconductor.

Abstract: An organic light emitting device enables improvement on the loss of optical extraction efficiency due to total reflection and optical waveguide effects. The organic light emitting device has a structure wherein a first electrode, an organic substance layer, and a second electrode are sequentially laminated on a substrate, a random nano structure having a fine pattern of a peaks-and-valleys shape is formed between a substrate and a first electrode to extract any light that is wasted due to total reflection and an optical waveguide mode to the outside of the substrate so that an organic light emitting device with improved external quantum efficiency can be realized, and optical extraction patterns and color changes due to visual field angles can also be improved.

Abstract: An organic film-forming polymer has a Tg of at least 70° C. and comprises a backbone comprising recurring units of Structure (A) shown in this application. These organic film-forming polymers can be used as dielectric materials in various devices with improved properties such as improved mobility.

Abstract: An organic light emitting display device which includes a base member; an organic light emitting display unit provided on one surface of the base member and configured to generate an image; an intermediate layer provided over the one surface of the base member and formed to be in contact with the organic light emitting display unit; and a capping member including a bulkhead member and a first member, wherein one surface of the first member is in contact with the intermediate layer, and the bulkhead member is protruded from an opposite surface of the first member to define a plurality of capping areas.

Abstract: A blue color photoelectric conversion film includes: a p-type layer formed by depositing tetracene; a p,n-type layer formed by co-depositing tetracene and naphthalene-tetracarboxylic-dianhydride (“NTCDA”) on the p-type layer; and an n-type layer formed by depositing NTCDA on the p,n-type layer.

Abstract: Novel iridium complexes containing triazole and tetrazole carbene ligands are described. These metal complexes additionally contain dibenzo moieties such as dibenzothiophene and dibenzofuran, and the complexes have overall improved properties such as more saturated blue emission when used as emissive compounds in OLED devices.

Abstract: The present invention relates to a candlelight-like light organic light-emitting device, comprising: a first conductive layer, a hole injection layer, a hole transport layer, a first host light-emitting layer, a second host light-emitting layer, an electron transport layer, an electron injection layer, and a second conductive layer. Particularly, in the present invention, a plurality of candlelight complementary color dyes are doped in the first host light-emitting layer and the second host light-emitting layer for making the first host light-emitting layer and the second host light-emitting layer respectively emit a first light and a second light, such that the first light and the second light are mixed to a candlelight-like light with high color rendering index and low color temperature; therefore the candlelight-like light is suitable for being a reading light or a bedside light, and can facilitate users to read by their eyes under a comfortable condition.

Abstract: An object is to reduce the number of manufacturing steps of a semiconductor device, to improve yield of a semiconductor device, or to reduce manufacturing cost of a semiconductor device. One embodiment of the present invention relates to a semiconductor device and a method for manufacturing the semiconductor device. The semiconductor device includes, over a substrate, a first transistor having a single crystal semiconductor layer in a channel formation region, a second transistor that is isolated from the first transistor with an insulating layer positioned therebetween and has an oxide semiconductor layer in a channel formation region, and a diode having a single crystal semiconductor layer and a oxide semiconductor layer.

Abstract: A semiconductor device includes: an emitter electrode formed of a silicide film, and provided on a semiconductor layer; an insulating film provided on the emitter electrode; and an electrode pad made of Al, and provided on the insulating film.

Abstract: The present invention in a first aspect proposes a semiconductor structure with a crack stop structure. The semiconductor structure includes a matrix, an integrated circuit and a scribe line. The matrix includes a scribe line region and a circuit region. The integrated circuit is disposed within the circuit region. The scribe line is disposed within the scribe line region and includes a crack stop trench which is disposed in the matrix and adjacent to the circuit region. The crack stop trench is parallel with one side of the circuit region and filled with a composite material in the form of a grid to form a crack stop structure.