Abstract: The present invention is long-term cultures of avian PGCs and techniques to produce germline chimeric and transgenic birds derived from prolonged PGC cultures. In some embodiments, these PGCs can be transfected with genetic constructs to modify the DNA of the PGC, specifically to introduce a transgene encoding an exogenous protein. When combined with a host avian embryo by known procedures, those modified PGCs produce germline chimeric birds. These germline chimeric birds do not have PGC derived somatic cells or tissues. This invention includes compositions comprising long-term cultures of PGCs that can be genetically modified by gene targeting, that can accept large amounts of foreign DNA and that contribute to the germline of recipient embryos.

Abstract: Systems, devices, and methods for delivering a biological material into an organelle of a cell are provided. In one aspect, for example, a method for introducing biological material into an organelle of a cell can include bringing into proximity outside of a cell a lance and a preselected biological material, charging the lance with a polarity and a charge sufficient to electrically associate the preselected biological material with a tip portion of the lance, and penetrating an outer portion of the cell with the lance and directing and inserting the lance into the cell but outside of the organelle. The method can further include discharging the lance to release at least a portion of the biological material, charging the lance with an opposite polarity and charge sufficient to electrophoretically drive at least a portion of the biological material into the organelle, and withdrawing the lance from the cell.

Abstract: ABSTRACT Methods, compositions, constructs, vectors, cell lines, and kits, for generating induced pluripotent stem cells by site-specific integration of pluripotency coding sequences with endonucleases for use in gene therapy, regenerative medicine, cell therapy or drug screening.

Abstract: An object of the present invention is to provide a method of promoting polyploidization of megakaryocytes and thereby producing highly polyploidized megakaryocytes, a method of efficiently producing platelets from polyploidized megakaryocytes, and the like. The present invention provides a method of producing polyploidized megakaryocytes comprising a step of forcing expression of an apoptosis suppressor gene in megakaryocytes before polyploidization and culturing the resulting cells.

Abstract: The present invention provides facultatively attenuated bacterial species and methods of preparation and use thereof. The term “facultatively attenuated” as used herein refers to a bacterium which comprises a set of defined recombinant modifications which have substantially no effect on the ability of the bacterium to grow by multiplication when the bacterium is outside of its host organism, but which result in deletion of one or more genes essential for multiplication of the bacterium when the bacterium is introduced into its host organism, for example within host cells of a vaccinate recipient. These recombinant modifications take advantage of regulatory sequences which preferentially induce expression of genes within the mammalian host.

Abstract: Described are compositions and methods relating to variant filamentous fungi having altered growth characteristics. Such variants are well-suited for growth in submerged cultures, e.g., for the large-scale production of enzymes and other proteins for commercial applications.

Abstract: A system for managing the inventory of reagents for a laboratory automation system. The system for managing the inventory of reagents comprises a controller, software for the controller, and a refrigerator capable of refrigerating reagents, detecting the presence or absence of reagents in the refrigerator, and detecting the location of reagents in the refrigerator. The system for managing the inventory of reagents is connected to a laboratory automation system. The laboratory automation system comprises at least one clinical analyzer. A typical system for managing inventories of reagents includes an operator interface for the loading of boxes of reagents and other supplies, radio frequency identification system for identification of inventory and tracking, robotic mechanisms for loading containers onto the track system and removing containers from the track system, de-capping equipment, refrigeration equipment, and information technology connections to laboratory analyzers and vendors.

Abstract: A method of evaluating NASH includes (I) an obtaining step of obtaining amino acid concentration data on a concentration value of an amino acid in blood collected from a subject to be evaluated and (II) a concentration value criterion evaluating step of evaluating a state of a hepatic fibrogenesis in a NASH in the subject, based on the amino acid concentration data of the subject obtained at the obtaining step.

Abstract: Embodiments of compounds for selectively detecting an analyte are disclosed, along with methods and kits for detecting analytes with the compounds. The compounds are bridged viologen conjugates including at least one fluorophore according to the general structure At least one of R1/R2, R2/R3, R3/R4, R5/R6, R6/R7, and/or R7/R8 together form a substituted or unsubstituted cycloalkyl or aryl.

Abstract: An analyte measurement system is provided having sensors with embossed test chamber channels. In one embodiment, the sensors are elongate test strips for in vitro testing, each test strip having a substrate, at least one electrode, an embossed channel in the electrode, and lidding tape covering at least a portion of the embossed channel. Methods of manufacture are also disclosed for filling the sensor channels with reagent, and for trimming the ends of the sensors to eliminate the need for a calibration code during use of the sensors with a meter.

Abstract: One aspect of the invention relates to an ultrathin micro-electromechanical chemical sensing device which uses swelling or straining of a reactive organic material for sensing. In certain embodiments, the device comprises a contact on-off switch chemical sensor. For example, the device can comprises a small gap separating two electrodes, wherein the gap can be closed as a result of the swelling or stressing of an organic polymer coating on one or both sides of the gap. In certain embodiments, the swelling or stressing is due to the organic polymer reacting with a target analyte.

Abstract: The invention relates to a device for producing CO2, N2 and/or SO2 from a sample for a quantitative analysis of the sample, comprising a reactor structure and metals acting in an oxidizing manner or metal oxides in the reactor. According to the invention, the reactor structure has at least two zones through which the sample can flow, which is to say a first zone with reactor metal and reservoir metal, or only reactor metal, and following the first zone, a second zone with reactor metal and reservoir metal, or only reservoir metal, wherein both metals can form oxides, and wherein the ratio of the reactor metal to the reservoir metal in the first zone is greater than in the second zone.

Abstract: A method for the detection of explosives using a single sample. The explosives include nitro aliphatic and nitro aromatic-based explosives. The method includes steps which require different pHs to discriminate between these types of explosives and at least in the detection step of the nitro aliphatic explosive requires the presence of a nitro aromatic compound. A kit for detecting explosives which includes a medium for collecting a sample, a base optionally impregnated on the medium; and a nitro aromatic solution for detecting a nitro aliphatic explosive by contacting the solution with the sample on the medium. A reagent including a nitro aromatic compound, having one or more additional electron withdrawing groups, in the presence of a basic compound usable for detecting nitro aliphatic explosives.

Abstract: Quantification of vitamin D2, vitamin D3, and the monohydroxy and diihydroxy metabolites of vitamin D2 and vitamin D3, can comprise labeling analytes with mass spectrometry (MS) tagging reagents and performing LC-MSMS analysis of the labeled analytes. The labeled analytes can include a labeled standard and can have distinct retention times on a reversed phase column, as well as distinct masses. Under high energy collisions, reporter groups can be generated. The intensity or the peak area detected for each reporter group can be used for quantitation. In some embodiments, a one-step tagging reagent is used that is a dienophile-containing, labeled m Diels Alder reagent.

Abstract: Detecting a presence of a subject material in a fluid sample using at least one resonating sensor immersible in the fluid sample. Binding kinetics of an interaction of an analyte material present in the fluid sample are measured with the resonating sensor, which has binding sites for the analyte material. Prior to exposing the resonating sensor to the fluid sample, operation of the resonating sensor is initiated, which produces a sensor output signal representing a resonance characteristic of the resonating sensor. Optionally, a reference resonator is used that produces a reference output signal. The reference resonator lacks binding sites for the analyte. Introduction of a fluid sample to the resonating sensor is automatically detected based on detection of a characteristic change in the sensor output signal or a reference output signal, or both.

Abstract: Disclosed herein is a method for detecting an antigen. The method includes: reacting an antigen as an analyte having an absorption wavelength at 300 nm to 400 nm with an antibody to form an antigen-antibody conjugate; irradiating light to the antigen-antibody conjugate to induce fluorescence resonance energy transfer, thereby obtaining a fluorescence spectrum; and determining the presence of the antigen as the analyte by analyzing the fluorescence spectrum, and then measuring the concentration of the antigen. The method is capable of directly detecting various antigens in a homogeneous liquid state, which induces no competitive reaction, with high sensitivity and high selectivity through fluorescent resonance energy transfer, without any modification.

Abstract: The present invention related to a reaction vessel, an assay device and a measuring method. A reaction vessel includes a casing, a reagent and at least one individual element. The casing includes an opening and a detection zone. The opening may be formed on the edge of the casing and used to introduce a sample included an analyte. The detection zone is used to detect the analyte in the sample. The reagent is interacted with the sample. The individual element provides space and flow channel for mixing the sample and the reagent. The sample and the reagent are mixed in the individual element so as to determine the analyte in the detection zone, and thereby increasing accuracy of analyte detection.

Abstract: An optical device has a deformable solid substrate, and a two dimensional array of metal particles which is carried by the substrate. The array provides a controlled separation between nearest-neighbour particles. Deformation of the substrate produces corresponding variation in the controlled separation such that the two dimensional array undergoes a transition between metallic and insulator surface reflectance.

Abstract: A method of forming a magnetoresistive random access memory (MRAM) apparatus includes forming a first conductive line on a first insulating layer, forming a second insulating layer on the first conductive line and forming a magnetic tunnel junction through the second insulating layer to contact the first conductive line. The method also includes forming a cavity adjacent to the magnetic tunnel junction in the second insulating layer and forming a second conductive line on the second insulating layer to contact the magnetic tunnel junction.

Abstract: A method of forming a magnetic random access memory (MRAM) device includes forming at least one write line, forming a first insulating layer over the at least one write line and forming a heating line on the first insulating layer. The method includes forming at least one tunnel junction above the at least one write line, the at least one tunnel junction connected to the heating line, forming a second insulating layer on the heating line and forming heat current supply vias at each end of the current line. The method further includes forming heat current supply lines connected to each heat current supply via and forming at least one read line above the at least one tunnel junction and physically connected to the at least one tunnel junction.

Abstract: The present invention discloses a method of forming an annular storage structure of a magneto-resistive memory. It relates to the manufacturing process of the semiconductor devices. The method includes the following steps: a silicon oxide layer and a silicon nitride layer is formed on the thin-film layer of a magnetic channel junction; a circular silicon nitride trench is formed; a poly-silicon thin film is deposited to cover the silicon nitride trench, the annular poly-silicon structure is formed by plasma etching back; the remaining silicon nitride thin film is removed to form the annular poly-silicon hard mask; the poly-silicon hard mask is used when the magnetic channel junction thin film layer is etched by plasma etching. At last, the unit structure of magnetic channel junction is formed.

Abstract: A deposition amount measuring apparatus includes a plate-shaped body having a rotating shaft, a plurality of deposition amount sensors along side surfaces of the body, the deposition amount sensors being configured to measure an amount of deposition material, and a housing surrounding the body, the housing including an inflow port that exposes one of the deposition amount sensors.

Abstract: Methods here disclosed provide for selectively coating the top surfaces or ridges of a 3-D substrate while avoiding liquid coating material wicking into micro cavities on 3-D substrates. The substrate includes holes formed in a three-dimensional substrate by forming a sacrificial layer on a template. The template includes a template substrate with posts and trenches between the posts. The steps include subsequently depositing a semiconductor layer and selectively etching the sacrificial layer. Then, the steps include releasing the semiconductor layer from the template and coating the 3-D substrate using a liquid transfer coating step for applying a liquid coating material to a surface of the 3-D substrate. The method may further include coating the 3-D substrate by selectively coating the top ridges or surfaces of the substrate.

Abstract: A method of detecting the circular uniformity of semiconductor circular contact holes. Several detection circuit structures are disposed on the semiconductor wafer: N-type active regions and P-type active regions; silicon dioxide layers separate the N-type active regions from the P-type active regions; the N-type active regions are formed in the P well and the P-type active regions are formed in the N well; polysilicon gates bridge the N-type active regions and the P-type active regions; gate oxide layers insulate the P-type regions and the N-type regions from the polysilicon gates, so that the P-type regions and the N-type regions are independent; the N-type active regions connect with circular contact holes while the P-type active regions and the polysilicon gates connect with oval contact holes; a electron beam scanner detects the circular uniformity of the contact holes. This invention advantageously reflects effectively and comprehensively the circular uniformity of the contact holes.

Abstract: A system and method of compensating for local focus errors in a semiconductor process. The method includes providing a reticle and applying, at a first portion of the reticle, a step height based on an estimated local focus error for a first portion of a wafer corresponding to the first portion of the reticle. A multilayer coating is formed over the reticle and an absorber layer is formed over the multilayer coating. A photoresist is formed over the absorber layer. The photoresist is patterned, an etch is performed of the absorber layer and residual photoresist is removed.

Abstract: A thin film deposition apparatus and a method of depositing a thin film using the thin film deposition apparatus, the thin film deposition apparatus including a chamber having a substrate and a mask mounted therein; a deposition source, the deposition source supplying a deposition gas to the substrate; and a mask measuring unit, the mask measuring unit measuring a status of the mask within the chamber.

Abstract: A method of testing a semiconductor package is provided, including: disposing at least an interposer on a top surface of an adhesive layer, the interposer having a first surface and a second surface opposite to the first surface, a plurality of conductive elements disposed between the second surface of the interposer and the adhesive layer; disposing at least a semiconductor chip on the first surface of the interposer, and performing an electrical test on the semiconductor chip via the conductive elements, wherein if there are a plurality of semiconductor chips that are disposed on the first surface of the interposer, the step of disposing the semiconductor chip and performing the electrical test on the semiconductor chip is iterated; and removing the adhesive layer. By using the method, the fabrication cost and equipment cost of the semiconductor package are reduced, and product yield is increased.

Abstract: A method for separating a multiple number of semiconductor devices or semiconductor integrated circuits from a wafer on which the multiple number of semiconductor devices or semiconductor integrated circuits are formed is provided. The method includes: forming, on a surface of the wafer, a mask layer through which a line-shaped pattern to be removed for separating the semiconductor devices or semiconductor integrated circuits is exposed; and etching the exposed pattern to a depth equal to or larger than about ? of a thickness of the wafer. The line-shaped pattern is formed so as to prevent a test device formed on a gap between the semiconductor devices or semiconductor integrated circuits from remaining on separated semiconductor devices or semiconductor integrated circuits.

Abstract: A display apparatus includes a display substrate and a counter substrate. The display substrate includes a first substrate and a plurality of pixel electrodes formed on the first substrate. The counter substrate includes a second substrate facing the first substrate, a common electrode formed on the second substrate, a first spacer formed on the common electrode and making contact with the display substrate, a second spacer having a first gap with the display substrate, a third spacer having a second gap larger than the first gap with the display substrate, and a fourth spacer having a third gap larger than the second gap with the display substrate.

Abstract: A light emitting device comprises a first layer of an n-type semiconductor material, a second layer of a p-type semiconductor material, and an active layer between the first layer and the second layer. A light coupling structure is disposed adjacent to one of the first layer and the second layer. In some cases, the light coupling structure is disposed adjacent to the first layer. An orifice formed in the light coupling structure extends to the first layer. An electrode formed in the orifice is in electrical communication with the first layer.

Abstract: According to embodiments of the present invention, a method for forming an optical modulator is provided. The method includes providing a substrate, implanting dopants of a first conductivity type into the substrate to form a first doped region, implanting dopants of a second conductivity type into the substrate to form a second doped region, wherein a portion of the second doped region is formed over and overlaps with a portion of the first doped region to form a junction between the respective portions of the first doped region and the second doped region, and wherein a remaining portion of the second doped region is located outside of the junction, and forming a ridge waveguide, wherein the ridge waveguide overlaps with at least a part of the junction.

Abstract: An organic layer forming apparatus includes a donor film supply part configured to supply a donor film. The donor film includes a base substrate, a transfer layer disposed on the base substrate, and a protective film disposed on the transfer layer. The apparatus also includes a protective film withdrawal part configured to remove the protective film from the donor film, a transfer printing process part configured to transfer the transfer layer of the donor film onto a transfer substrate to form a first organic layer, a first deposition part configured to form a second organic layer on the transfer layer through a first deposition process, a second deposition part configured to form a third organic layer on the transfer layer through a second deposition process, and a donor film withdrawal part configured to withdraw the donor film.

Abstract: A manufacturing method of an array substrate includes the following steps. A first conductive layer, a gate insulating layer, a semiconductor layer, an etching stop layer, and a first patterned photoresist are successively formed on a substrate. The etching stop layer and the semiconductor layer uncovered by the first patterned photoresist are then removed by a first etching process. A patterned gate insulating layer and a patterned etching stop layer are then formed through a second etching process. The first conductive layer uncovered by the patterned gate insulating layer is then removed to form a gate electrode. The semiconductor layer uncovered by the patterned etching stop layer is then removed to form a patterned semiconductor layer and partially expose the patterned gate insulating layer.

Abstract: A method for forming an electronic device such as a passive color OLED display. Bottom electrodes are patterned onto a substrate in rows. Raised posts formed by photoresist are patterned into columns oriented orthogonally to the bottom row electrodes. One or more organic layers, such as R, G, B organic emissive layers are patterned over the raised posts and bottom electrodes using organic vapor jet printing (OVJP). An upper electrode layer is applied over the entire device and forms electrically isolated columnar electrodes due to discontinuities in the upper electrode layer created by the raised columnar posts. This permits patterning of the upper electrodes over the organic layers without using photolithography. A device formed by this method is also described.

Abstract: Method for manufacturing organic EL element including anode, hole injection layer, buffer layer, light-emitting layer, and cathode, layered on substrate in the stated order, and banks defining a light-emission region, and having excellent light-emission characteristics, due to the hole injection layer having excellent hole injection efficiency, being a tungsten oxide layer including an oxygen vacancy structure, formed under predetermined conditions to have an occupied energy level within a binding energy range from 1.8 eV to 3.6 eV lower than a lowest binding energy of a valence band, and after formation, subjected to atmospheric firing at a temperature within 200° C.-230° C. inclusive for a processing time of 15-45 minutes inclusive to have increased film density and improved dissolution resistance against an etching solution, a cleaning liquid, etc., used in a bank forming process.

Abstract: A method of fabricating a first device includes providing a first container that contains, in a desired proportion, a first organic emitting material having a first peak wavelength, a second organic emitting material having a second peak wavelength; providing a substrate having a first electrode disposed thereon; depositing an emissive layer over the first electrode, wherein the first container is a source of material for depositing, and wherein the emissive layer has a homogeneous composition and comprises the first and second organic emitting materials in the desired proportion; depositing a second electrode over the first emissive layer, and wherein the second peak wavelength is between 0 and 40 nm greater than the first peak wavelength.

Abstract: Provided are a nitride semiconductor light-emitting device comprising a polycrystalline or amorphous substrate made of AlN; a plurality of dielectric patterns formed on the AlN substrate and having a stripe or lattice structure; a lateral epitaxially overgrown-nitride semiconductor layer formed on the AlN substrate having the dielectric patterns by Lateral Epitaxial Overgrowth; a first conductive nitride semiconductor layer formed on the nitride semiconductor layer; an active layer formed on the first conductive nitride semiconductor layer; and a second conductive nitride semiconductor layer formed on the active layer; and a process for producing the same.

Abstract: Methods of fabricating solar cells are described. A porous layer may be formed on a surface of a substrate, the porous layer including a plurality of particles and a plurality of voids. A solution may be dispensed into one or more regions of the porous layer to provide a patterned composite layer. The substrate may then be heated.

Abstract: A method (50) is provided for processing a graded-density AR silicon surface (14) to provide effective surface passivation. The method (50) includes positioning a substrate or wafer (12) with a silicon surface (14) in a reaction or processing chamber (42). The silicon surface (14) has been processed (52) to be an AR surface with a density gradient or region of black silicon. The method (50) continues with heating (54) the chamber (42) to a high temperature for both doping and surface passivation. The method (50) includes forming (58), with a dopant-containing precursor in contact with the silicon surface (14) of the substrate (12), an emitter junction (16) proximate to the silicon surface (14) by doping the substrate (12). The method (50) further includes, while the chamber is maintained at the high or raised temperature, forming (62) a passivation layer (19) on the graded-density silicon anti-reflection surface (14).

Abstract: Methods for producing a semiconductor layer and for producing a photoelectric conversion device, semiconductor raw material are disclosed. An embodiment of the method for producing a semiconductor layer includes: forming a film containing a metal element and an oxygen element; generating oxygen gas by heating the film; and forming a semiconductor layer containing a metal chalcogenide from the film by allowing the metal element to react with a chalcogen element. Another embodiment of the method includes forming a lower film containing a metal element; forming an upper film, which contains the metal element and a substance that contains oxygen, on the lower film; generating oxygen gas by heating the substance; and forming a semiconductor layer containing a metal chalcogenide from the lower film and the upper film by allowing a chalcogen element to react with the metal element in the lower film and the upper film.

Abstract: A device and method for forming a photovoltaic device include forming a photovoltaic stack of layers on a transparent substrate wherein at least one layer of the photovoltaic stack of layers includes a microcrystalline layer. The microcrystalline layer is formed by purging a vacuum chamber with a gettering gas to remove contaminant species from the chamber prior to forming the microcrystalline layer. The microcrystalline layer is deposited at a vacuum base pressure of greater than about 10?2 Torr.

Abstract: A device and method for fabricating a photovoltaic device includes forming a double layer transparent conductive oxide on a transparent substrate. The double layer transparent conductive oxide includes forming a doped electrode layer on the substrate, and forming a buffer layer on the doped electrode layer. The buffer layer includes an undoped or p-type doped intrinsic form of a same material as the doped electrode layer. A light-absorbing semiconductor structure includes a p-type semiconductor layer on the buffer layer, an intrinsic layer and an n-type semiconductor layer.

Abstract: Stencil for a screen-printing system, comprising slits (22, 23) in a central printing zone (13), forming a pattern to be printed, characterized in that it comprises one or more apertures (32) in a peripheral deforming zone (14), which apertures are intended to cause this peripheral deforming zone (14) to deform under the effect of a stress applied to the stencil while reducing deformation of the central printing one (13).

Abstract: Method for the oriented crystallization of materials. The present invention relates to a method useful for orienting the crystallization of a material over a surface zone of at least one face of a substrate, comprising at least the steps consisting in: i. determining, on said face, the surface over which the crystalline deposit must be formed, referred to as the zone of interest, ii. depositing, on said face and at the periphery of said zone of interest, at least one particle dedicated to forming a crystallization nucleus, iii. bringing said particle into contact with at least said material to be crystallized, iv.

Abstract: One method of making an electronic assembly includes mounting one electrical substrate on another electrical substrate with a face surface on the one substrate oriented transversely of a face surface of the other substrate. The method also includes inkjet printing on the face surfaces a conductive trace that connects an electrical contact on the one substrate with an electrical connector on the other substrate. An electronic assembly may include a first substrate having a generally flat surface with a first plurality of electrical contacts thereon; a second substrate having a generally flat surface with a second plurality of electrical contacts thereon, the surface of the second substrate extending transversely of the surface of said first substrate; and at least one continuous conductive ink trace electrically connecting at least one of the first plurality of electrical contacts with at least one of the second plurality of electrical contacts.

Abstract: Carrier wafers, methods of manufacture thereof, and packaging methods are disclosed. In one embodiment, a carrier wafer includes a first glass layer. The carrier wafer includes a second glass layer coupled to the first glass layer. The first glass layer has a first coefficient of thermal expansion (CTE), and the second glass layer has a second CTE.

Abstract: An embedded semiconductor die package is made by mounting a frame carrier to a temporary carrier with an adhesive. The frame carrier includes die mounting sites each including a leadframe interconnect structure around a cavity. A semiconductor die is disposed in each cavity. An encapsulant is deposited in the cavity over the die. A package interconnect structure is formed over the leadframe interconnect structure and encapsulant. The package interconnect structure and leadframe interconnect structure are electrically connected to the die. The frame carrier is singulated into individual embedded die packages. The semiconductor die can be vertically stacked or placed side-by-side within the cavity. The embedded die packages can be stacked and electrically interconnected through the leadframe interconnect structure. A semiconductor device can be mounted to the embedded die package and electrically connected to the die through the leadframe interconnect structure.

Abstract: A method for fabricating a semiconductor chip module and a semiconductor chip package is disclosed. One embodiment provides a first layer, a second layer, and a base layer. The first layer is disposed on the base layer, and the second layer is disposed on the first layer. A plurality of semiconductor chips is applied above the second layer, and the second layer with the applied semiconductor chips is separated from the first layer.

Abstract: Chip cracking that occurs when a dicing step using a blade is carried out to acquire semiconductor chips with the reduced thickness of a semiconductor wafer is suppressed. When the semiconductor wafer is cut at the dicing step for the semiconductor wafer, a blade is advanced as follows: in dicing in a first direction (Y-direction in FIG. 12) along a first straight line, the blade is advanced from a first point to a second point. The first point is positioned in a first portion and the second point is opposed to the first point with a second straight line running through the center point of the semiconductor wafer in between.

Abstract: According to an exemplary implementation, a method includes utilizing a leadframe panel comprising a plurality of leadframe modules, each of the plurality of leadframe modules having a leadframe pad. The leadframe panel has a plurality of bars each having a plurality of grooves, where the plurality of bars connect the plurality of leadframe modules. The method further includes attaching a device to the leadframe pad. The method also includes molding the leadframe panel while leaving a bottom of the leadframe pad exposed. Furthermore, the method includes sawing through the plurality of grooves of the plurality of bars to singulate the plurality of leadframe modules into separate packaged modules.