Abstract: A mount assembly includes a playpen frame, a support frame that can provide support for a bassinet in the playpen frame, and multiple bar segments to provide support for a utility accessory positioned side-by-side relative to the bassinet. The playpen frame includes two first upper side rail assemblies each having a fixed wall, and a second upper side rail assembly connected with the two first upper side rail assemblies. The support frame includes two connectors operable to respectively attach to and detach from the fixed walls. Each connector is formed to include a socket. The two connectors can attach to the fixed walls respectively near a middle of the two first upper side rail assemblies. The bar segments are mountable to the playpen frame, one of the bar segments once mounted to the playpen frame having an end portion resting in contact with the socket of one connector.

Abstract: A removable safety barrier for a construction site pit, in which piles support the sides of the pit, and having a plurality of upright barrier posts at spaced intervals, supported on the piles, the barrier posts extending below grade level around the edge of the construction pit and also above grade level; a plurality of retention panels, shaped to fit between adjacent posts; personal barrier supports secured to the barrier posts above grade level; and personal barrier members supported in the supports, extending substantially transversely between the upright barrier posts, and the retention panels being located below grade level extending between the barrier posts.

Abstract: A railing system providing an aesthetically pleasing appearance and unobstructed view and having a plurality of railing posts defining planar side walls and fastening bases, clamp fastening openings formed from side wall to side wall through the posts, clamp units secured on opposite sides of the posts, by fastenings passing through the clamp fastening openings, and, glass panels supported by the clamp units between the posts.

Abstract: A wire-mesh security fence panel and security fence is provided. In at least on example the fence panel includes: a first set of substantially parallel wires, each wire having a first and a second end; a second set of substantially parallel wires, the second set of wires being welded across the first set on one picket-wire side of the first set; a cross-wire-side connection strip welded across the first end of the first set on the picket-wire side of the first set; and an opposite side connection strip welded across the second end of the first set on the opposite side of the picket-wire side. In one such example each connection strip has an outside edge and each outside edge is equally spaced from the end of the wires to which the strip is welded.

Abstract: A connection assembly, in accordance with one embodiment of the present disclosure, generally includes a first portion, wherein the first portion includes a body made substantially from plastic material and an adjustable interface made substantially from metal material, and a second portion couplable to the first portion.

Abstract: The disclosure relates to a method of fabricating a vertical MOS transistor, comprising the steps of: forming, above a semiconductor surface, a conductive layer in at least one dielectric layer; etching a hole through at least the conductive layer, the hole exposing an inner lateral edge of the conductive layer and a portion of the semiconductor surface; forming a gate oxide on the inner lateral edge of the conductive layer and a bottom oxide on the portion of the semiconductor surface; forming an etch-protection sidewall on the lateral edge of the hole, the sidewall covering the gate oxide and an outer region of the bottom oxide, leaving an inner region of the bottom oxide exposed; etching the exposed inner region of the bottom oxide until the semiconductor surface is reached; and depositing a semiconductor material in the hole.

Abstract: The disclosure relates to an integrated circuit comprising a transistor comprising first and second conduction terminals and a control terminal. The integrated circuit further comprises a stack of a first dielectric layer, a conductive layer, and a second dielectric layer, the first conduction terminal comprising a first semiconductor region formed in the first dielectric layer, the control terminal comprising a second semiconductor region formed in the conductive layer, and the second conduction terminal comprising a third semiconductor region formed in the second dielectric layer.

Abstract: A method of forming a non-volatile memory device. The method includes providing a substrate having a surface region and forming a first dielectric material overlying the surface region of the substrate. A first electrode structure is formed overlying the first dielectric material and a p+ polycrystalline silicon germanium material is formed overlying the first electrode structure. A p+ polycrystalline silicon material is formed overlying the first electrode structure using the polycrystalline silicon germanium material as a seed layer at a deposition temperature ranging from about 430 Degree Celsius to about 475 Degree Celsius without further anneal. The method forms a resistive switching material overlying the polycrystalline silicon material, and a second electrode structure including an active metal material overlying the resistive switching material.

Abstract: A radio frequency switch includes a first transmission line, a second transmission line, a first electrode electrically coupled to the first transmission line, a second electrode electrically coupled to the second transmission line, and a phase change material, the first transmission line coupled to a first area of the phase change material and the second transmission line coupled to a second area of the phase change material. When a direct current is sent from the first electrode to the second electrode through the phase change material, the phase change material changes state from a high resistance state to a low resistance state allowing transmission from the first transmission line to the second transmission line. The radio frequency switch is integrated on a substrate.

Abstract: Some embodiments include a method of forming a memory cell. A first portion of a switching region is formed over a first electrode. A second portion of the switching region is formed over the first portion using atomic layer deposition. The second portion is a different composition than the first portion. An ion source region is formed over the switching region. A second electrode is formed over the ion source region. Some embodiments include a memory cell having a switching region between a pair of electrodes. The switching region is configured to be reversibly transitioned between a low resistive state and a high resistive state. The switching region includes two or more discrete portions, with one of the portions not having a non-oxygen component in common with any composition directly against it in the high resistive state.

Abstract: A resistive random access memory includes a first electrode, a second electrode and a first metal oxide composite layer. The second electrode is opposite to the first electrode. The first metal oxide composite layer is disposed between the first electrode and the second electrode. The first metal oxide composite layer has a film layer and a nanorod structure.

Abstract: According to one embodiment, a nonvolatile variable resistance device includes a first electrode, a second electrode, a first layer, and a second layer. The second electrode includes a metal element. The first layer is arranged between the first electrode and the second electrode and includes a semiconductor element. The second layer is inserted between the second electrode and the first layer and includes the semiconductor element. The percentage of the semiconductor element being unterminated is higher in the second layer than in the first layer.

Abstract: A method of fabricating a nano resonator, includes forming a line pattern in a first substrate, and transferring the line pattern to a second substrate including a gate electrode. The method further includes forming a source electrode and a drain electrode on the transferred line pattern.

Abstract: The present invention provides a regenerative nanosensor device for the detection of one or more analytes of interest. In certain embodiments, the device comprises a nanostructure having a reversible functionalized coating comprising a supramolecular assembly. Controllable and selective disruption of the assembly promotes desorption of at least part of the reversible functionalized coating thereby allowing for reuse of the regenerative device.

Abstract: A light emitting device comprises an n-type layer, a p-type layer, and an active region sandwiched between the n-type layer and the p-type layer, wherein the active-region has a wavy structure with nano or micro fluctuations in its thickness direction. The n-type layer comprises crystal facets on its upper surface, and the active-region is conformally formed on the upper surface of the n-type layer and substantially follows the shape of the crystal facets so as to form the wavy structure. A method for fabricating the same is also provided.

Abstract: According to one aspect, the present invention concerns a terahertz modulator (1) intended to be used in a given frequency band of use. The modulator comprises a semi-conductor polar crystal (330) presenting a Reststrahlen band overlapping said frequency band of use and presenting at least one interface with a dielectric medium, coupling means (330) allowing the resanant coupling of an interface phonon polariton (IPhP) supported by said interface and of an incident radiation (2) of pre-determined frequency lying in said frequency band of use and means of control (22) apt to modify the intensity of the coupling between said interface phonon polariton and said incident radiation (2) by modification of the dielectric function of the polar crystal in the Reststrahlen band of the polar crystal (10).

Abstract: A light emitting device comprising a staggered composition quantum well (QW) has a step-function-like profile in the QW, which provides higher radiative efficiency and optical gain by providing improved electron-hole wavefunction overlap. The staggered QW includes adjacent layers having distinctly different compositions. The staggered QW has adjacent layers Xn, wherein X is a quantum well component and in one quantum well layer n is a material composition selected for emission at a first target light regime, and in at least one other quantum well layer n is a distinctly different composition for emission at a different target light regime. X may be an In-content layer and the multiple Xn-containing layers provide a step function In-content profile.

Abstract: A semiconductor light emitting device includes a first nitride semiconductor layer, a dopant doped semiconductor layer on the first nitride semiconductor layer, an active layer on the dopant doped semiconductor layer, a delta doped layer on the active layer, a superlattice structure on the delta doped layer, an undoped layer on the superlattice layer, a second nitride semiconductor layer including a first n-type dopant, a third nitride semiconductor layer including a second n-type dopant, and a fourth nitride semiconductor layer including a third n-type dopant.

Abstract: A device includes a textured substrate having a trench extending from a top surface of the textured substrate into the textured substrate, wherein the trench comprises a sidewall and a bottom. A light-emitting device (LED) includes an active layer over the textured substrate. The active layer has a first portion parallel to the sidewall of the trench and a second portion parallel to the bottom of the trench.

Abstract: There is provided a semiconductor light emitting device having improved light emitting efficiency by increasing an inflow of holes into an active layer while preventing an overflow of electrons. The semiconductor light emitting device includes an n-type semiconductor layer; an active layer formed on the n-type semiconductor layer and including at least one quantum well layer and at least one quantum barrier layer alternately stacked therein; an electron blocking layer formed on the active layer and having at least one multilayer structure including three layers having different energy band gaps stacked therein, a layer adjacent to the active layer among the three layers having an inclined energy band structure; and a p-type semiconductor layer formed on the electron blocking layer.

Abstract: Disclosed are a nitride semiconductor light-emitting element having a superior current spreading effect as a result of using a current spreading part containing current spreading impurities, and a method for manufacturing same. The nitride semiconductor light-emitting element according to the present invention comprises: an n-type nitride layer; a current spreading part, which is formed from nitride comprising current spreading impurities, and which is disposed on the n-type nitride layer; an activation layer disposed on the current spreading part; and a p-type nitride layer disposed on the activation layer, wherein the current spreading impurities comprise carbon (C).

Abstract: There is provided a nitride semiconductor light emitting device, capable of improving light extraction efficiency through a texture effect and including: a light emitting structure formed on a substrate and including a first conductivity-type nitride semiconductor layer and a second conductivity-type nitride semiconductor layer with an active layer interposed therebetween; a first electrode electrically connected to the first conductivity-type nitride semiconductor layer; a second electrode electrically connected to the second conductivity-type nitride semiconductor layer; and a light extraction pattern disposed between the first electrode and the second electrode and including a plurality of through holes formed by vertically penetrating the light emitting structure.

Abstract: Pixels in a focal plane array are defined by controlled variation of the Fermi energy at the surface of the detector array. Varying the chemical composition of the semiconductor at the detector surface produces a corresponding variation in the surface Fermi energy which produces a corresponding variation in the electric field and electrostatic potential in the bulk semiconductor below the surface. This defines pixels by having one Fermi energy at the surface of each pixel and a different Fermi energy at the surface between pixels. Fermi energy modulation can also be controlled by applying an electrostatic potential voltage V1 to the metal pad defining each pixel, and applying a different electrostatic potential voltage V2 to an interconnected metal grid covering the gaps between all the pixel metal pads. Methods obviate the need to etch deep trenches between pixels, resulting in a more manufacturable quasi-planar process without sacrificing performance.

Abstract: Provided is an optical device which includes an active layer which includes at least two outer barriers and at least one coupled quantum well, each of the at least one coupled quantum well is sandwiched between the at least two outer barriers. Each of the at least one coupled quantum well includes at least three quantum well layers and at least two coupling barriers interposed between the at least three quantum layers. The at least two coupling barriers have a potential energy which is higher than a ground level and is lower than energy levels of the at least two outer barriers.

Abstract: An electronic structure comprising: (a) a first metal layer; (b) a second metal layer; (c) and at least one insulator layer located between the first metal layer and the second metal layer, wherein at least one of the metal layers comprises an amorphous multi-component metallic film. In certain embodiments, the construct is a metal-insulator-metal (MIM) diode.

Abstract: A graphene electronic device includes: a first conductive layer and a semiconductor layer on a first region of an intermediate layer; a second conductive layer on a second region of the intermediate layer; a graphene layer on the intermediate layer, the semiconductor layer, and the second conductive layer; and a first gate structure and a second gate structure on the graphene layer.

Abstract: QCA assemblies, in which basic cells are formed on the basis of graphene in order to provide a coupling field distribution in the form of an electrostatic field, a magnetic field, and the like which allows a unique association between field distribution and logic state. Moreover, the corresponding energy structure may be selected so as to allow operation of the QCA assemblies at ambient temperature. Hence, the signal processing capabilities of QCA assemblies may be obtained at significantly reduced complexity compared to conventional quantum-based QCA assemblies, which typically operate at very low temperatures.

Abstract: An apparatus for depositing one or more organic material layers of an OLED lighting device upon a first region of a substrate and one or more conducting layers upon a second region, wherein the conducting layers partially or completely cover and extend beyond one side of the organic layers, comprising: a reusable mask in contact with the substrate, at least one mask open area having an overhang feature; one or more sources of vaporized organic material, selected to form layers of the OLED lighting device, and the vaporized organic material plume is shaped, on the side corresponding to the mask overhang feature, so as to limit substantial transfer of organic material on said side to angles less than or equal to a selected cutoff angle to the first region; and one or more sources of vaporized conducting material that transfer conducting material to the second region, wherein the second region partially or completely overlaps the first region and extends beyond the first region on the side corresponding to the o

Abstract: An apparatus for depositing one or more organic material layers of an OLED lighting device upon a first region of a substrate and one or more conducting layers upon a second region, wherein the conducting layers partially or completely cover and extend beyond one side of the organic layers, comprising: a reusable mask in contact with the substrate, at least one mask open area having an overhang feature; one or more sources of vaporized organic material, selected to form layers of the OLED lighting device, and the vaporized organic material plume is shaped, on the side corresponding to the mask overhang feature, so as to limit substantial transfer of organic material on said side to angles less than or equal to a selected cutoff angle to the first region; and one or more sources of vaporized conducting material that transfer conducting material to the second region, wherein the second region partially or completely overlaps the first region and extends beyond the first region on the side corresponding to the o

Abstract: An organic light emitting diode, including: a substrate; a first cavity electrode in a first micro-cavity region of the substrate; a first transparent electrode of a first thickness in the first micro-cavity region, the first transparent electrode overlaps beyond a first side of the first cavity electrode; a first emissive layer in electrical connection with the first transparent electrode; and a cathode layer on the first emissive layer.

Abstract: Provided is an organic light-emitting display apparatus that includes a display substrate; a plurality of organic light-emitting devices (OLEDs) that are disposed on the display substrate and are separated by a pixel defining layer; an encapsulation substrate that is disposed facing the display substrate and covers the OLEDs; and a filling material that is disposed between the display substrate and the encapsulation substrate and disposed corresponding to the pixel defining layer, wherein the filling material includes a material that absorbs visible light and a method manufacturing the organic light-emitting display apparatus.

Abstract: An organic light-emitting display apparatus includes: a display substrate; a plurality of organic light-emitting diodes (OLEDs) on the display substrate, the OLEDs being divided from one another by a pixel defining layer (PDL); an encapsulation substrate on the display substrate and covering the OLEDs; a filling material on the PDL and between the display substrate and the encapsulation substrate; and a cavity between the OLEDs and the encapsulation substrate.

Abstract: The present disclosure relates to a bipolar compound represented by the following formula (I); and an organic luminescent diode device containing the same. wherein A represents a phenyl, a biphenyl, or a terphenyl group; and Ra, Rb, and Rc are independently selected from a group consisting of a hydrogen, a halo, a cyano, a trifluoromethyl, an amino, a C1-C10 alkyl, a C2-C10 alkenyl, a C2-C10 alkynyl, a C3-C20 cycloalkyl, a C3-C20 cycloalkenyl, a C1-C20 heterocyclic alkyl, a C1-C20 hetercyclic alkenyl, an aryl, and a heteroaryl groups.

Abstract: An organic light-emitting device includes: a first electrode, a second electrode facing the first electrode, a phosphorescent emission layer between the first electrode and the second electrode, an electron transportation layer between the phosphorescent emission layer and the second electrode, an electron control layer between the phosphorescent emission layer and the electron transportation layer, and an electron blocking layer between the phosphorescent emission layer and the first electrode. An organic light-emitting display apparatus includes the organic light-emitting device.

Abstract: A silicon based compound and an organic light-emitting diode including the same.

Abstract: A carbazole-based compound is represented by Formula 1 and may be used in the organic layer of an organic light-emitting diode. An organic light-emitting diode includes a first electrode, a second electrode, and an organic layer between the first and second electrodes. The organic layer includes an emission layer, and the carbazole-based compound of Formula 1 may be included in the emission.

Abstract: An organic light emitting diode (OLED) and a method of manufacturing the same. An auxiliary layer comprising a high density metallic compound and an emission layer are formed by a laser induced thermal imaging (LITI) process. The LITI process reduces manufacturing costs and time by eliminating the need for a mask patterning process. The metallic compound has a density of 2 g/cm3 or greater to promote adhesion and improve interfacial planarization. This results in improved luminance uniformity (i.e. luminance mura) between pixels within an OLED display device.

Abstract: An organic light-emitting diode device includes a substrate, a patterned anode layer, an organic semiconductor layer and a cathode layer. The patterned anode layer is disposed on the substrate. The organic semiconductor layer is disposed to cover an upper surface and sidewalls of the patterned anode layer and the substrate, wherein a thickness of the organic semiconductor layer is greater than three times of that of the patterned anode layer. The cathode layer is disposed to cover the organic semiconductor layer.

Abstract: Electrode substrate for an optoelectronic device having a fabric (10) that includes electrically conductive (14; 56) as well as non-conductive (12; 50) and transparent fibres wherein the fabric is furnished over a wide area with a transparent, electrically conductive coating (26, 28, 58) in such manner that projecting or exposed portions of the electrically conductive fibres cooperate with the conductive coating in order to produce electrical contacts, wherein the conductive coating has a layer thickness that is smaller than a mean diameter of the electrically conductive and electrically non-conductive fibres of the fabric, a fabric weave of the electrically conductive fibres of the fabric is organized in such a manner that in order to create the protruding portions, the fibres encompass at least 2 of the non-conductive fibres that extend transversely in the manner of a twill weave, the fabric is embedded in the coating in such manner that portions (20; 22; 56) of the conductive fibres protrude from a non-con

Abstract: A substrate carrying an OLED electrode, with a sheet resistance of less than 25 ?/square, includes an electrically conducting coating, an essentially inorganic thin electrically conducting layer which is a work-function-matching layer and which exhibits a sheet resistance at least 20 times greater than the sheet resistance of the electrically conducting coating, with a thickness of at most 60 nm, and, between the electrically conducting coating and the work-function-matching layer, a thin buffer layer, which is essentially inorganic and which has a surface resistivity within a range from 10?6 to 1 ?·cm2.

Abstract: An object is to provide a photosensitive resin composition for color filters, configured to be able to form a high-luminance color layer with excellent heat resistance and light resistance. Disclosed is a photosensitive resin composition for color filters including the dye dispersion liquid, the dye dispersion liquid including a dye dispersed by a dispersant in a solvent, wherein the dye is a dye having a sulfonic acid group; the dispersant is a graft copolymer having an amine number of 30 mg KOH/g or more and including copolymerizable components that contain a specific monomer having a tertiary amine and a specific polymerizable oligomer; the solvent is a solvent having a solubility of the dye of 0.2 g/100 g solvent or less at 23° C.; and the tertiary amine of the dispersant and the sulfonic acid group of the dye form a micelle.

Abstract: A fluorene-based compound represented by Formula 1 below and an organic light-emitting device (OLED) including the fluorene-based compound. wherein R1 to R3, R10 to R17 and a, b, c, d, e, and f are defined as in the specification.

Abstract: An organic EL display device ensures brightness and improves a contrast ratio by a reduction in external light reflection. The organic EL display device includes a wavelength selective absorption filter that absorbs a light in a given absorption spectrum uniform in a display region. An absorption spectrum has a negative correlation with an outgoing spectrum in which respective spectrums of R pixels, G pixels, and B pixels are synthesized together.

Abstract: An organic EL display device includes a first substrate, a plurality of organic EL devices arranged on the first substrate, a second substrate arranged above the first substrate, and a filling layer arranged between the first substrate and the second substrate, and displays an image on the second-substrate side. The organic EL display device is characterized in that: the organic EL devices each have a light-emission layer, a reflection electrode formed below the light-emission layer and reflecting light from the light-emission layer upwards, and an upper electrode formed above the light-emission layer and having a light transmission property and reflectivity; a structure for resonating the light emitted by the light-emission layer is formed between the reflection electrode and the upper electrode; and the filling layer includes fine particles for diffusing light exiting from the upper electrode added therein.

Abstract: An organic electroluminescent display device includes an organic light emitting structure, a back light module, and a light control structure. The organic light emitting structure includes a first electrode, a second electrode, an organic light emitting layer, and a photo current sensitive layer. The back light module is disposed correspondingly to the organic light emitting structure so as to provide a light beam to the organic light emitting structure. The photo current sensitive layer is configured to absorb the light beam for generating an electrical current, and the electrical current is configured to drive the organic light emitting layer. The light control structure is disposed between the organic light emitting structure and the back light module as so to control amount of the light beam entering the organic light emitting structure.

Abstract: An x-ray detector includes a first electrode, a second electrode spaced apart from the first electrode, an organic p-type semiconducting layer disposed between the first and second electrodes, and an organic n-type semiconducting layer disposed between the first and second electrodes and in contact with the organic p-type semiconducting layer to form a pn-junction layer therebetween. At least one of the organic p-type semiconducting layer or the organic n-type semiconducting layer includes an x-ray absorbing material blended therein.

Abstract: An organic light emitting diode (OLED) display includes: pixel electrodes formed on a substrate; a pixel definition layer between the pixel electrodes and partitioning a pixel area; organic emission layers of a plurality of colors on the pixel electrodes; and a common electrode on the organic emission layers. The pixel definition layer includes a first pattern and a second pattern having different formation materials, thicknesses, and extension directions.

Abstract: A light-emitting element of the present invention can have sufficiently high emission efficiency with a structure including a host material being able to remain chemically stable even if a phosphorescent compound having higher emission energy is used as a guest material. The relation between the relative emission intensity and the emission time of light emission obtained from the host material and the guest material contained in a light-emitting layer is represented by a multicomponent decay curve. The relative emission intensity of the slowest component of the multicomponent decay curve becomes 1/100 for a short time within a range where the slowest component is not interfered with by quenching of the host material (the emission time of the slowest component is preferably less than or equal to 15 ?sec); thus, sufficiently high emission efficiency can be obtained.

Abstract: A pressure sensor including a lower substrate having two electrodes partially covered with a semiconductor layer and a piezoelectric layer made of a piezoelectric material, and in contact with the semiconductor layer in such a way that semiconductor material is in contact with the piezoelectric material and with the two electrodes, deposited thereon. The electrodes are intended to be connected to a voltage source or to a device for measuring the intensity of a current generated by the displacement of the electric charges in the semiconductor layer between the electrodes, said electric charges being created when a pressure is exerted on the piezoelectric layer.

Abstract: The resin composition of the present invention is a resin composition characterized by including (a) a polyimide, a polybenzoxazole, a polyimide precursor or a polybenzoxazole precursor, (b) 1,5-dihydroxynaphthalene, 1,6-dihydroxynaphthalene, 1,7-dihydroxynaphthalene, or 2,3-dihydroxynaphthalene, and (c) a thermal cross-linking agent having a specific structure. By the use of the resin composition of the present invention, it is possible to reduce the transmittance in the visible region of a cured film while maintaining the transmittance of a resin film before curing.