Abstract: Novel compounds useful as organic semiconductor material are described. Semiconductor devices containing said organic semiconductor material are also described.

Abstract: Novel semiconducting polymers have been formed via the electron-induced cross-linking of orthocarborane B10C2H2 and 1,4-diaminobenzene. The films were formed by co-condensation of the molecular precursors and 200 eV electron-induced cross-linking under ultra-high vacuum (UHV) conditions. Ultraviolet photoemission spectra show that the compound films display a shift of the valence band maximum from ˜4.3 eV below the Fermi level for pure boron carbide to ?1.7 eV below the Fermi level when diaminobenzene is added. The surface photovoltage effect decreases with decreasing B/N atomic ratio. A neutron detector comprises the polymer as the p-type semiconductor to be paired with an n-type semiconductor.

Abstract: An organic light-emitting device comprises a first electrode, a second electrode and at least one light-emitting layer between the first and second electrodes wherein the device comprises a plurality of light-emitters that together provide a source of white light. A first light-emitting layer comprises a host material and a first light-emitter of the plurality of light-emitters that emits light having a peak photo luminescent wavelength in the range of 580-610 nm; and wherein a LUMO of the first light-emitter is no more than 0.2 eV further from vacuum than a LUMO level of the host material.

Abstract: The invention relates to an organic light-emitting diode (OLED) comprising a stack comprising, in sequence and in the following order, a substrate (2), a first electrode (3), an organic layer (4), and a second electrode (5), characterized in that it comprises a layer of adhesive (6) and a cover (7) fixed onto said stack using said layer of adhesive (6), and the cover (7) comprises at least one through-opening (8), wherein electrical access to an electrode (3, 5) is possible through said opening (8). The present invention can be more specifically used in electronic devices having screens and lighting.

Abstract: An organic electroluminescence includes an anode, a cathode and at least an emitting layer interposed between the anode and the cathode, in which the emitting layer contains a first host material, a second host material and a phosphorescent dopant material as main components. The first host material is a compound represented by the following formula (1). The second host material is a compound represented by the following formula (2).

Abstract: Disclosed is a crosslinkable light-emitting composition comprising at least one host material, at least one phosphorescent light-emitting dopant, a first crosslinker comprising an unsaturated carbon-carbon bond group and a second crosslinker comprising a ring system capable of undergoing ring-opening crosslinking.

Abstract: An organic light emitting display apparatus including an organic light-emitting unit formed on a substrate; a moisture absorbing layer formed on the organic light-emitting unit; and at least one inorganic layer, which is formed on the moisture absorbing layer and includes a low temperature viscosity transition (LVT) inorganic material.

Abstract: Illustrated and described is an illuminant, including at least one organic light emitting diode which is applied to a carrier material that is vapor deposited with a metal layer which metal layer supplies the at least one organic light emitting diode with voltage and is connectable with connecting conductors, wherein at least one connecting contact is bonded on one side at least to the metal layer and on another side directly fixated in an insulating material housing.

Abstract: Embodiments of the present disclosure can significantly reduce the non-display area of a flexible OLED display, which would otherwise be covered by a cosmetic trim such as a bezel or an opaque. As such, an electronic device with a display having minimized border area can be provided. This makes it possible to reduce the overall size of the electronic device without sacrificing the size of the display therein. Such a reduction in size of the bezel was achieved by bending the flexible substrate near its edge using an insert member.

Abstract: A method for manufacturing a flexible display device includes: manufacturing a flexible substrate on a substrate by: forming a first organic layer on the substrate, removing foreign particles formed on the first organic layer and forming a recessed first repair groove in the first organic layer, forming a first inorganic layer on the first organic layer, forming a second organic layer on the first inorganic layer and forming a second inorganic layer on the second organic layer, forming a display for displaying an image on the flexible substrate and removing the substrate from the first organic layer.

Abstract: A display panel includes: a plurality of pixel circuits formed in a matrix on a substrate; an insulating layer covering the plurality of pixel circuits; a plurality of light emitting elements connected to the plurality of pixel circuits, and arranged in a matrix on the insulating layer; a filtering layer including a light transmitting section at least in a part of a region facing the light emitting element and a light shielding section formed in a same plane as the light transmitting section, and formed on an opposite side from the pixel circuit in relation to the light emitting element; a light reflecting section formed in a region facing the light shielding section, and between the light emitting element and the filtering layer; and a light receiving element formed in a region facing the light shielding section, and on the pixel circuit side in relation to the light emitting element.

Abstract: The invention relates to a light source (1) comprising a light generating unit (2) like an organic light emitting diode and an outcoupling device (3) for coupling light out of the light generating unit in an outcoupling direction (4). The outcoupling device comprises a first region (5) for facing the light generating unit, a second region (7) having a refractive index being smaller than the refractive index of the first region, and a structured intermediate region (6) between the first region and the second region. The first region is optically homogenous and has a thickness in the outcoupling direction being larger than a coherence length of the light, thereby reducing generally possible wavelength dependent interference effects and, thus, a corresponding degradation of the outcoupling efficiency. The outcoupling efficiency can therefore be increased.

Abstract: A light emission device includes an organic electroluminescent element including a first electrode and a second electrode, a wiring board including a second substrate, a first patterned conductor and a second patterned conductor, a first bond which is an electrical conductor containing electrically conductive powder and an organic binder, and electrically interconnects the first electrode and the first patterned conductor, and a second bond which is an electrical conductor containing electrically conductive powder and an organic binder, and electrically interconnects the second electrode and the second patterned conductor. The first patterned conductor is provided with a spread restrainer defining a spread range of the first bond, and the second patterned conductor is provided with a spread restrainer defining a spread range of the second bond.

Abstract: An EL element having a novel structure is provided, which is suitable for AC drive. A light-emitting element of the invention is provided with material layers (material layers each having approximately symmetric I-V characteristics with respect to the zero point in a graph having the abscissa axis showing current values and the ordinate axis showing voltage values) between a first electrode and a layer including an organic compound and between the layer including the organic compound and a second electrode respectively. Specifically, each of the material layers is a composite layer including a metal oxide and an organic compound.

Abstract: A display device including: a plurality of sub-pixels arranged in a matrix, each including an electro-optical element having a structure in which a display functional layer is sandwiched between an upper electrode and a lower electrode; and an auxiliary interconnect contact in a pixel area in which the plurality of sub-pixels are arranged in a matrix and electrically connecting the upper electrode to an auxiliary interconnect, wherein m (m is an integer equal to or larger than two) sub-pixels adjacent to each other along an arrangement direction of the sub-pixels are regarded as one group, and n (n is a natural number smaller than m) auxiliary interconnect contacts are formed for each group.

Abstract: A method of modifying a fluorinated polymer surface comprising the steps of depositing a first layer on at least a portion of the fluorinated polymer surface, the first layer comprising a first polymer, the first polymer being a substantially perfluorinated aromatic polymer; and depositing a second layer on at least a portion of the first layer, the second layer comprising a second polymer, the second polymer being an aromatic polymer having a lower degree of fluorination than said first polymer, whereby the second layer provides a surface on to which a substance having a lower degree of fluorination than the first polymer, e.g. a non-fluorinated substance is depositable.

Abstract: A laminated substrate for an organic LED element includes a translucent substrate, a scattering layer including glass and a solid scattering material provided on the translucent substrate and having a thickness of 30 ?m or less, and an electrode provided on the scattering layer, and no covering layer including glass is provided between the scattering layer and the electrode.

Abstract: An organic EL element includes an organic EL substrate 4 including an organic light emitting unit provided on a translucent substrate, and a sealing cap substrate sealing the light emitting unit. The organic EL substrate includes first electrode taking-out pads and provided in electrodes which feed power to the light emitting unit, and a first bonding portion 40 provided in a peripheral portion of the translucent substrate. The sealing cap substrate includes second electrode taking-out pads and facing the first electrode taking-out pads, through-wiring and passing through the sealing cap substrate, and a second bonding portion facing the first bonding portion. The first bonding portion and the second bonding portion are bonded together through surface activated bonding.

Abstract: The present invention relates to an organic light emitting diode and a method of manufacturing the same. An organic light emitting diode according to the present invention comprises an exciton blocking layer comprising a compound represented by Formula 1 to confine an exciton to a light emitting layer to prevent light emitting leakage, and thus there is an effect of implementing an organic electroluminescence diode having excellent light emitting efficiency. Accordingly, it is possible to implement an organic light emitting diode having a simple and economical manufacturing process, a low voltage, high efficiency, and a long life span as compared to the related art.

Abstract: An organic electroluminescence device including an anode and a cathode being opposed, wherein a first organic thin film layer and a second organic thin film layer are provided between the anode and the cathode sequentially from the anode side; the first organic thin film layer including an aromatic heterocyclic derivative A represented by the following formula (1-1) and a phosphorescent emitting material; and the second organic thin film layer including an aromatic heterocyclic derivative B represented by the following formula (2-1):

Abstract: A light-emitting element includes: a first electrode; a light-emitting functional layer that is provided on the first electrode, and includes a conductive layer as an uppermost layer thereof; a second electrode that is provided on the conductive layer, and has an undesired opening that corresponds to a region of the conductive layer; and a first passivation layer that is provided on the second electrode except on a periphery of the opening. The region of the conductive layer is oxidized. The light-emitting functional layer includes an organic light-emitting layer, and the conductive layer is provided above the organic light-emitting layer.

Abstract: Disclosed are polysulfone-based materials that can be used as active and/or passive components in various electronic, optical, and optoelectronic devices, particularly, metal-oxide-semiconductor field-effect transistors. For example, various metal-oxide-semiconductor field-effect transistors can include a dielectric layer and/or a passivation layer prepared from such polysulfone-based materials and exhibit good device performance.

Abstract: A thin film transistor includes, on an insulating substrate, at least: a gate electrode; a gate insulating layer; a source electrode; a drain electrode; a metal oxide layer including a semiconductor region and an insulating region, each of the semiconductor region and the insulating region being composed of a same metal oxide material; and an insulating protective layer. The semiconductor region includes a region between the source electrode and the drain electrode, and is overlaid on a part of each of them. The semiconductor region is formed between the gate insulating layer and the insulating protective layer to abut on at least one of them. The electric conductivity of the semiconductor region is higher than that of the insulating region.

Abstract: A flexible display substrate, a flexible organic light emitting display device, and a method of manufacturing the same are provided. The flexible display substrate comprises a flexible substrate including a display area and a non-display area extending from the display area, and a wire formed on the flexible substrate. At least a part of the non-display area of the flexible substrate is formed in a crooked shape in a bending direction, and the wire positioned on at least a part of the non-display area of the flexible substrate includes a plurality of first wire patterns, and a second wire pattern formed on the plurality of first wire patterns and electrically connected with the plurality of first wire patterns.

Abstract: A thin-film transistor (TFT) device comprises a gate, a source, a drain, an insulation layer and an active area. The insulation layer electrically separates the gate from the source and the drain. The active area including a plurality of contacting areas contacting the source and the drain, respectively, and generates a channel including a channel width and a channel length. The active area includes a semiconductor material and has a plurality of active-area edges. In the direction parallel to the channel width, a distance between at least a contacting-area edge of the contacting areas and the active-area edge of the active area that is near to the contacting-area edge is larger than 2.5 ?m and less than or equal to 16 ?m. A TFT display apparatus is also disclosed.

Abstract: An active matrix image sensing panel comprises a substrate and an image sensing pixel. The image sensing pixel is disposed on the substrate and comprises a scan line, a data line crossing the scan line, a photo sensing element and a TFT element. The photo sensing element includes a first terminal electrode and a second terminal electrode, and the voltage of the first terminal electrode is higher than that of the second terminal electrode. The TFT element includes a first electrode, a second electrode, a first gate electrode and a second gate electrode. The first electrode is electrically connected to the data line, the second electrode is electrically connected to the first terminal electrode, the first gate electrode is electrically connected to the scan line, and the second gate electrode is electrically connected to the first or second terminal electrode. An active matrix image sensing apparatus is also disclosed.

Abstract: A semiconductor element structure and a manufacturing method for the same are provided. The semiconductor element structure may comprise a gate electrode, a dielectric layer, an active layer, a source, a drain and a protective layer. The active layer and the gate electrode are disposed on opposing sides of the dielectric layer. The source is disposed on the active layer. The drain is disposed on the active layer. The protective layer is disposed on the active layer. The protective layer may have a hydrogen content less than or equal to 0.1 at % and a sheet resistance higher than or equal to 10? 10 Ohm/sq.

Abstract: Provided is a bottom-gate transistor including an oxide semiconductor, in which electric-field concentration which might occur in the vicinity of an end portion of a drain electrode layer (and the vicinity of an end portion of a source electrode layer) when a high gate voltage is applied to a gate electrode layer is reduced and degradation of switching characteristics is suppressed, so that the reliability is improved. The cross-sectional shape of an insulating layer which overlaps over a channel formation region is a tapered shape. The thickness of the insulating layer which overlaps over the channel formation region is 0.3 ?m or less, preferably 5 nm or more and 0.1 ?m or less. The taper angle ? of a lower end portion of the cross-sectional shape of the insulating layer which overlaps over the channel formation region is 60° or smaller, preferably 45° or smaller, further preferably 30° or smaller.

Abstract: It is an object to provide a highly reliable semiconductor device which includes a thin film transistor having stable electric characteristics. It is another object to manufacture a highly reliable semiconductor device at lower cost with high productivity. In a method for manufacturing a semiconductor device which includes a thin film transistor where a semiconductor layer having a channel formation region, a source region, and a drain region are formed using an oxide semiconductor layer, heat treatment (heat treatment for dehydration or dehydrogenation) is performed so as to improve the purity of the oxide semiconductor layer and reduce impurities such as moisture. Moreover, the oxide semiconductor layer subjected to the heat treatment is slowly cooled under an oxygen atmosphere.

Abstract: A semiconductor device in which a transistor using an oxide semiconductor containing In, Zn, or the like for a channel region can be driven like a p-channel transistor is provided. The semiconductor device includes a transistor and an inverter, wherein an output of the inverter is input to a gate of the transistor, a channel region of the transistor includes an oxide semiconductor film containing In, Zn, or Sn, and each channel region of transistors in the inverter contains silicon. When a high voltage is input to the inverter, a low voltage is output from the inverter and is input to the gate of the transistor, so that the transistor is turned off. When a low is input to the inverter, a high voltage is output from the inverter and is input to the gate of the transistor, so that the transistor is turned on.

Abstract: The present disclosure provides a gas sensor including: a substrate; an electrode formed on the substrate; and a gas-sensing layer formed on the electrode, wherein the gas-sensing layer is a self-heating nanocolumnar structure having nanocolumns formed on the electrode and inclined with respect to the electrode with an angle of 60-89° and gas diffusion pores formed between the nanocolumns. The gas sensor according to the present disclosure requires no additional heater since it self-heats owing to the nanocolumnar structure and exhibits superior gas sensitivity even when no heat is applied from outside. Also, it can be mounted on mobile devices such as mobile phones because it consumes less power.

Abstract: A Ga2O3 semiconductor element, includes: an n-type ?-Ga2O3 substrate; a ?-Ga2O3 single crystal film, which is formed on the n-type ?-Ga2O3 substrate; source electrodes, which are formed on the ?-Ga2O3 single crystal film; a drain electrode, which is formed on the n-type ?-Ga2O3 substrate surface on the reverse side of the ?-Ga2O3 single crystal film; n-type contact regions, which are formed in the ?-Ga2O3 single crystal film, and have the source electrodes connected thereto, respectively; and a gate electrode, which is formed on the ?-Ga2O3 single crystal film with the gate insulating film therebetween.

Abstract: The system and methods allow for emulation of random hardware failure of an internal embedded memory array of an integrated circuit (IC) device. Emulation of potential defects is performed in order to evaluate the behavior of the rest of the design. This non-intrusive emulation is performed in a pseudo-functional mode in order to evaluate the behavior of one or more memory cores in their standard functional mode. The solution enables the creation of failures and tracking both the detection of the failures and the time required time for detection. Specifically, the emulation of an internal memory array with respect of random failures and the associated diagnostic mechanism ensures that detection and correction mechanisms work as expected. A typical non-limiting use case is to ensure that safety control logic of an IC behaves as expected in cases of data corruption within an embedded memory core.

Abstract: A donor layer that is formed by performing a heat treatment for a crystal defect formed by proton radiation is provided in an n-type drift layer of an n? semiconductor substrate. The donor layer has an impurity concentration distribution including a portion with the maximum impurity concentration and a portion with a concentration gradient in which the impurity concentration is reduce to the same impurity concentration as that of the n-type drift layer in a direction from the portion with the maximum impurity concentration to both surfaces of the n-type drift layer. The crystal defect formed in the n-type drift layer is a composite crystal defect mainly caused by a vacancy, oxygen, and hydrogen.

Abstract: Methods for forming a photovoltaic device include forming a buffer layer between a transparent electrode and a p-type layer. The buffer layer includes a doped germanium-free silicon base material. The buffer layer has a work function that falls within barrier energies of the transparent electrode and the p-type layer. An intrinsic layer and an n-type layer are formed on the p-type layer. Devices are also provided.

Abstract: A thin film transistor comprises a semiconductor layer; first and second dielectric layers disposed on opposite sides of the semiconductor layer; a first metal layer forming first and second terminals on the opposite side of the first dielectric layer from the semiconductor layer, one of said first and second terminals extending through said first dielectric layer into contact with the semiconductor layer, the first and second terminals and the first dielectric layer forming a capacitor; and a second metal layer forming a third terminal on the opposite side of the second dielectric layer from the semiconductor layer. The first and second terminals may be source and drain terminals, and the third terminal may be a gate terminal. The first metal layer may be divided to form the first and second terminals. The third terminal may be shared with one of the first and second terminals.

Abstract: The present invention provides a manufacturing method of array substrate, which comprises: substrate; source, drain, driving electrode, and first capacitance electrode being formed on substrate; a first dielectric layer being formed to cover source, drain, driving electrode, and first capacitance electrode; first dielectric layer comprising first section covering first capacitance and second section covering the driving electrode; second section being thicker than first section; second capacitance electrode being formed on the first section of the first dielectric layer; first capacitor being formed with second capacitance electrode, first capacitance electrode, and first dielectric layer in between. Through this invention, the glue sealing of display device with present invention of array substrate is more effective.

Abstract: Embodiments provide an array substrate and a liquid crystal display panel. The array substrate comprises: a substrate, data lines and gate lines which are provided on the substrate and intersect with each other, and sub-pixel units which are defined by surrounding of the data lines and the gate lines and are arranged in an array form. Two gate lines for respectively driving the sub-pixel units in two adjacent rows are located between the sub-pixel units in the two adjacent rows; each sub-pixel unit comprises a thin film transistor (TFT) and a pixel electrode, and a connection area of the TFT and the pixel electrode is located between the two gate lines adjacent to the sub-pixel unit and has no overlapping area with a projection of the two gate lines in a perpendicular direction of the array substrate.

Abstract: A display device includes a display area and a terminal area formed outside the display area. The display area has a plurality of scanning lines and a plurality of video signal lines that cross the scanning lines. The terminal area has a first terminal having a semiconductor chip connected thereto, a first line, a second line, and an inspection thin-film transistor. The inspection thin-film transistor has a gate electrode connected to the first line, a source electrode connected to the second line, and a drain electrode. The first terminal is connected to any of the plurality of scanning lines and the plurality of video signal lines.

Abstract: To reduce parasitic capacitance between a gate electrode and a source electrode or drain electrode of a dual-gate transistor. A semiconductor device includes a first insulating layer covering a first conductive layer; a first semiconductor layer, second semiconductor layers, and an impurity semiconductor layer sequentially provided over the first insulating layer; a second conductive layer over and at least partially in contact with the impurity semiconductor layer; a second insulating layer over the second conductive layer; a third insulating layer covering the three semiconductor layers, the second conductive layer, and the second insulating layer; and a third conductive layer over the third insulating layer. The third conductive layer overlaps with a portion of the first semiconductor layer, which does not overlap with the second semiconductor layers, and further overlaps with part of the second conductive layer.

Abstract: A semiconductor device comprises a thin film transistor provided over a substrate having an insulating surface, and an electrode penetrating the substrate. The thin film transistor is provided between a first structural body and a second structural body, which has a higher rigidity than the first structural body, which serve as protectors because the structural bodies have resistance to a pressing force such as a tip of a pen or bending stress applied from outside so malfunction due to the pressing force and the bending stress can be prevented.

Abstract: A thin film transistor including: a substrate; an active layer formed over the substrate; a gate insulating layer formed over the active layer; a gate electrode formed over the gate insulating layer; an interlayer insulating layer formed over the gate electrode; and source and drain electrodes that contact the active layer via the interlayer insulating layer. The source and drain electrodes may have a structure including an aluminum (Al) layer, an aluminum-nickel alloy (AlNiX) layer, and an indium tin oxide (ITO) layer, which are sequentially stacked.

Abstract: A nitride-based semiconductor device is disclosed, including a substrate, an active region including a plurality of nitride-based semiconductor layers disposed on the substrate, wherein a 2DEG channel and a two-dimensional hole gas (2DHG) under the two-dimensional electron gas (2DEG) channel are formed within the plurality of nitride-based semiconductor layers, a gate electrode disposed on the top of the active region and an interconnection structure electrically connected with the gate electrode and the 2DHG.

Abstract: To provide an illumination method and a light-emitting device which are capable of achieving, under an indoor illumination environment where illuminance is around 5000 lx or lower when performing detailed work and generally around 1500 lx or lower, a color appearance or an object appearance as perceived by a person, will be as natural, vivid, highly visible, and comfortable as though perceived outdoors in a high-illuminance environment, regardless of scores of various color rendition metric. Light emitted from the light-emitting device illuminates an object such that light measured at a position of the object satisfies specific requirements. A feature of the light-emitting device is that light emitted by the light-emitting device in a main radiant direction satisfies specific requirements.

Abstract: A semiconductor light emitting device is provided, including a substrate, a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer that includes a top surface and a bottom surface. The device includes a first roughness layer having a random horn shape and formed with irregular intervals, a second roughness layer, and at least one of a first AlGaN based semiconductor layer and a second AlGaN based semiconductor layer. The second conductive semiconductor layer includes a plurality of apexes on the top surface, where the distance between at least two apexes is of about 0.3 ?m to about 1.0 ?m. The second roughness layer includes a lower surface having a shape corresponding to the top surface of the second conductive semiconductor layer. The second roughness layer includes an upper surface having a shape corresponding to a top surface of the first roughness layer.

Abstract: Methods of forming ternary III-nitride materials include epitaxially growing ternary III-nitride material on a substrate in a chamber. The epitaxial growth includes providing a precursor gas mixture within the chamber that includes a relatively high ratio of a partial pressure of a nitrogen precursor to a partial pressure of one or more Group III precursors in the chamber. Due at least in part to the relatively high ratio, a layer of ternary III-nitride material may be grown to a high final thickness with small V-pit defects therein. Semiconductor structures including such ternary III-nitride material layers are fabricated using such methods.

Abstract: This document describes the fabrication and use of ceramic stabilizing layer fabricated right on the product silicon wafer to facilitate its use as a substrate for fabrication of gallium nitride films. A ceramic layer is formed and then attached to a single crystal silicon substrate to form a composite silicon substrate that has coefficient of thermal expansion comparable with GaN. The composite silicon substrates prepared by this invention are uniquely suited for use as growth substrates for crack-free gallium nitride films, benefitting from compressive stresses produced by choosing a ceramic having a desired higher coefficient thermal expansion than those of silicon and gallium nitride.

Abstract: The present invention provides a semiconductor structure comprising a substrate, a gate stack, a sidewall, a base region, source/drain regions, and a support structure, wherein: the base region is located above the substrate, and is separated from the substrate by the void; said support structure is located on both sides of the void, in which part of the support isolation structure is connected with the substrate; the gate stack is located above the base region, said sidewall surrounding the gate stack; said source/drain regions are located on both sides of the gate stack, the base region and the support isolation structure, in which the stress in the source/drain regions first gradually increases and then gradually decreases along the height direction from the bottom. The present invention also provides a manufacturing method for the semiconductor structure. The present invention is beneficial to suppress the short channel effect, as well as to provide an optimum stress to the channel.

Abstract: In a SiC-MOSFET power device for which a SiC substrate is used, a laminated insulating film having a charge-trapping characteristic is employed as a gate insulating film of the SiC-DiMOSFET, and charges are injected into the laminated insulating film, thereby suppressing a change in the gate threshold voltage.

Abstract: A semiconductor light-emitting device made of a nitride-based semiconductor includes a semiconductor stacked structure having a nonpolar plane or a semipolar plane as a principal plane, and including an active layer for emitting polarized light. The semiconductor light-emitting device includes a striped structure which is provided in a position intersecting an exit path of the polarized light and includes a plurality of recesses. An angle formed between the extension direction of the recesses and the polarization direction of the polarized light is from 0° to 45°. The recesses have a minute uneven structure (texture) at at least part of a surface of each recess, the minute uneven structure being shallower than the depth of each recess.