Abstract: A semiconductor device includes a silicon substrate, a silicon carbide film formed on the silicon substrate, a mask member formed on a surface of the silicon carbide film, and having an opening section, single-crystal silicon carbide films each having grown epitaxially from the silicon carbide film exposed in the opening section as a base point, and covering the silicon carbide film and the mask member, and a semiconductor element formed on surfaces of the single-crystal silicon carbide films, an assembly section formed of the single-crystal silicon carbide films assembled to each other exists above the mask member, the semiconductor element has a body contact region, and the body contact region is disposed at a position overlapping the assembly section viewed from a direction perpendicular to the surface of the silicon substrate.

Abstract: A radiation-emitting semiconductor component includes a semiconductor body. The semiconductor body has a semiconductor layer sequence having an active region provided for generating radiation. The semiconductor component has a waveguide, which is provided for laterally guiding the radiation generated in the active region and which extends between a mirror surface and a coupling-out surface. The waveguide meets the mirror surface perpendicularly and forms an acute angle with a normal to the coupling-out surface.

Abstract: A semiconductor integrated circuit device includes a COF substrate; a semiconductor integrated circuit mounted on the COF substrate and having a first voltage circuit portion operating at a first voltage range and a second voltage circuit portion operating at a second voltage range higher than the first voltage range, the circuit portions being formed on a single chip; and a resin layer for sealing the COF substrate and the semiconductor integrated circuit.

Abstract: A solid-state light emitting device comprises a solid-state light emitter (LED) operable to generate excitation light and a wavelength conversion component including a mixture of particles of a photoluminescence material and particles of a light reflective material. In operation the phosphor absorbs at least a portion of the excitation light and emits light of a different color. The emission product of the device comprises the combined light generated by the LED and the phosphor. The wavelength conversion component can be light transmissive and comprise a light transmissive substrate on which the mixture of phosphor and reflective materials is provided as a layer or homogeneously distributed throughout the volume of the substrate. Alternatively the wavelength conversion component can be light reflective with the mixture of phosphor and light reflective materials being provided as a layer on the light reflective surface.

Abstract: A light-emitting device with multi-color temperature and multi-loop configuration is provided. The light-emitting device comprises a substrate, multiple light sources disposed on the substrate, and a light-emitting unit covering the light sources and at least a portion of the substrate. Each of the light sources is configured to emit a respective primary radiation. The light-emitting unit comprises multiple wavelength conversion components, each of which may include a respective fluorescent material. Each wavelength conversion component emits a respective converted radiation, upon absorbing a portion of the primary radiation from one or more of the light sources, and mixes the respective converted radiation with a portion of the primary radiation from the one or more of the light sources that is not absorbed to form a respective mixed radiation. Each wavelength conversion component is adjacent to, and at least partially contacts, at least another one of the wavelength conversion components.

Abstract: A light emitting diode display panel includes a substrate and a plurality of pixels. The substrate includes a plurality of transverse signal lines and a plurality of longitudinal signal lines crossing each other. The pixels are mounted on the substrate in a matrix form. Each pixel includes a plurality of LEDs. The LEDs are electrically connected to one of the transverse signal lines and one of the longitudinal signal lines.

Abstract: A semiconductor unit (10) is provided which comprises a first semiconductor chip (1a) and a second semiconductor chip (1b). The first and second semiconductor chip (1a, 1b) each have an active layer (1a, 1b) suitable for generating radiation. A first converter (3a) which comprises a yellow phosphor with an added red phosphor is arranged downstream of the first semiconductor chip (1a). A second converter (3b) which comprises a yellow phosphor with an added green phosphor is arranged downstream of the second semiconductor chip (1b). A module having a plurality of such units (10) is also provided.

Abstract: There is provided a display device including a plurality of light emitting elements over a first substrate, and an anti-reflection member configured to prevent reflection of light from a first substrate side at a boundary portion in a pixel region corresponding to each of the light emitting elements, the anti-reflection member being on a second substrate side where a second substrate faces the first substrate.

Abstract: There is provided a light emitting device including: a semiconductor substrate; a plurality of pixel circuits that is disposed in a display region of the semiconductor substrate; a first wiring that is formed of a conductive material so as to be supplied with a predetermined electric potential; and a plurality of first contact portions that is formed of a conductive material so as to connect the semiconductor substrate and the first wiring. The plurality of first contact portions and the first wiring are provided in the display region.

Abstract: Light emitter devices for light emitting diodes (LED chips) and related methods are disclosed. In one embodiment a light emitter device includes a substrate and a chip on board (COB) array of LED chips disposed over the substrate. A layer having wavelength conversion material provided therein is disposed over the array of LED chips for forming a light emitting surface from which light is emitted upon activation of the LED chips. In some aspects, the wavelength conversion material includes phosphoric or lumiphoric material that is settled and/or more densely concentrated within one or more predetermined portions of the layer. In some aspects, the devices and methods provided herein can comprise a lumen density of approximately 30 lm/mm2 or greater.

Abstract: Light emitting devices and methods such as light emitting diodes (LEDs) are disclosed for use in higher voltage applications. Variable arrangements of LEDs are disclosed herein. Arrangements can include one or more LED chips connected in series, parallel, and/or a combination thereof. LED chips can be disposed in a package body having at least one thermal element and one or more electrical components.

Abstract: A light emitting diode chip a support layer having a first face and a second face opposite the first face, a diode region on the first face of the support layer, and a bond pad on the second face of the support layer. The bond pad includes a gold-tin structure having a weight percentage of tin of 50% or more. The light emitting diode chip may include a plurality of active regions that are connected in electrical series on the light emitting diode chip.

Abstract: Light emitting devices include a Light Emitting Diode (LED) chip having an anode contact and a cathode contact on a face thereof. A solder mask extends from the gap between the contacts onto one or both of the contacts. The LED chip may be mounted on a printed circuit board without an intervening submount. Related fabrication methods are also described.

Abstract: The present application provides for a method for manufacturing a light emitting apparatus. The method includes mounting light emitting elements on a substrate and applying a resin containing phosphors to form wavelength conversion units covering the light emitting elements on the substrate. Portions of the wavelength conversion unit are removed between the light emitting elements. Regions of the substrate are diced, from which the wavelength conversion unit have been removed, to separate the plurality light emitting elements into individual light emitting elements.

Abstract: According to one embodiment, a semiconductor light emitting device includes: a semiconductor layer; a first electrode; a first interconnection layer; a second electrode; a second interconnection layer; a support substrate; a bonding layer; a first terminal; and a second terminal. The support substrate has a third face facing the semiconductor layer, the first interconnection layer, and the second interconnection layer and a fourth face opposite to the third face. The support substrate has a first opening extending from the fourth face to the first interconnection layer and a second opening extending from the fourth face to the second interconnection layer. The bonding layer is provided between the support substrate and each of the semiconductor layer, the first interconnection layer, and the second interconnection layer.

Abstract: The present disclosure relates to a semiconductor light-emitting device, comprising: a plurality of semiconductor layers grown sequentially using a growth substrate; a first electrode for providing either electrons or holes to a first semiconductor layer; a non-conductive reflective film formed over a second semiconductor layer to reflect light from an active layer towards the first semiconductor layer which is on the growth substrate side; and a finger electrode formed between the plurality of semiconductor layers and the non-conductive reflective film, which is extended so as to provide remaining electrons or holes to the second semiconductor layer, which is in electrical communication with the second semiconductor layer, and which has an electrical connection for receiving the remaining electrons or holes.

Abstract: A light-emitting module includes a first conductive lead frame, a second conductive lead frame physically separated from the first conductive lead frame, a protective plastic layer, a reflective plastic layer, and a light-emitting die. The protective plastic layer surrounds the first and second conductive lead frames, and an accommodating space s defined by the protective plastic layer, and the first and second conductive lead frames. Inner surfaces of the first and second conductive lead frames are exposed through the accommodating space. The accommodating space further includes a die-mounting region. The reflective plastic layer is formed on the inner surfaces within the accommodating space. The light-emitting die is located on the die-mounting region and is electrically connected to the first and second conductive lead frames. The light-emitting die protrudes from the reflective plastic layer.

Abstract: In an aspect of the present disclosure, there is disclosed a manufacture method of an antireflection coating using a self-assembly nano structure, which includes forming a first metal droplet on a substrate by means of droplet epitaxy, depositing a first non-metal on the formed first metal droplet, and forming a first nano compound crystal by means of self-assembly of the deposited first non-metal and the first metal droplet.

Abstract: A semiconductor light-emitting element includes a semiconductor layer including a light-emitting layer, and an upper reflective surface and a lower reflective surface between which the semiconductor layer is interposed. A distance L between the upper reflective surface and the lower reflective surface satisfies 0.20?+0.5a??L?0.30?+0.5a?, where ? denotes a peak wavelength of light emitted from the light-emitting layer within the semiconductor layer, and a denotes an arbitrary positive integer.

Abstract: This disclosure relates to light emitting devices and methods of manufacture thereof, including side and/or multi-surface light emitting devices. Embodiments according to the present disclosure include the use of a functional layer, which can comprise a stand-off distance with one or more portions of the light emitter to improve the functional layer's stability during further device processing. The functional layer can further comprise winged portions allowing for the coating of the lower side portions of the light emitter to further interact with emitted light and a reflective layer coating on the functional layer to further improve light extraction and light emission uniformity. Methods of manufacture including methods utilizing virtual wafer structures are also disclosed.

Abstract: An optoelectronic semiconductor device including a carrier substrate and at least one semiconductor chip arranged thereon, wherein the semiconductor chip includes an active layer that generates radiation, conductor tracks electrically contacting the semiconductor chip arranged on the carrier substrate, the semiconductor chip is enclosed in a potting material, and the potting material includes at least a first potting layer, a second potting layer and a third potting layer, which differ from one another in at least one of: their material composition, their optical properties and their chemical properties.

Abstract: The invention relates to a method for producing a polymer product having integrated luminescent material particles, the polymer product being produced from at least one monomer in liquid phase and at least one kind of powder of luminescent material particles. The method is characterized by adding the luminescent material to the liquid monomer before polymerisation. The invention further relates to a plastic component for light conversion made of the polymer produced according to said method; a Light-emitting device comprising said plastic component; and the use of a polymer produced according to said method.

Abstract: A light emitting diode package includes a metallic frame, and an LED chip disposed on the metallic frame. The metallic frame includes first and second metal plates arranged side by side with a space therebetween, and two support arms extending integrally and respectively from two opposite ends of the second metal plate to a level higher than the second top surface and that further extend toward the first metal plate at a level higher than the first top surface crossing the space. The support arms are not in contact with the first metal plate. An encapsulant encapsulates the metallic frame and the LED chip. At least a region of the encapsulant that covers the LED chip is transparent.

Abstract: Phosphor compositions for highly reliable white light-emitting diode (LED) devices are disclosed. The phosphor compositions include a first oxynitride-based phosphor that emits green light and a second nitride-based phosphor that emits red light. When the weight ratio of the first oxynitride-based phosphor to the second nitride-based phosphor is from about 8:2 to 9:1, the emission spectra of the phosphor compositions are very similar to that of a yellow YAG phosphor with a peak at 550 nm. The phosphor compositions have emissions with CIE color coordinates satisfying an equation expressed as: y=0.0805x3?154.06x2+97017x?2E+07.

Abstract: There is provided a semiconductor light-emitting device having a small size and high light efficiency.

Abstract: To provide a substrate for optics provided with a fine-structure product which improves luminous efficiency of an LED while improving internal quantum efficiency IQE by decreasing the number of dislocation defects in a semiconductor layer, a substrate for optics (1) is provided with a fine-structure layer (12) including dots comprised of a plurality of convex portions (13) extending in the direction of from the main surface of a substrate (11) to outside the surface, where the fine-structure layer (12) has a plurality of dot lines (13-1 to 13-N) in which a plurality of dots is arranged with a pitch Py in the first direction in the main surface of the substrate (11), while having the plurality of dot lines in which a plurality of dots is arranged with a pitch Px in the second direction orthogonal to the first direction in the main surface of the substrate (11), one of the pitch Py and the pitch Px is a constant interval of nano-order, while the other one is an inconstant interval of nano-order, or both are inc

Abstract: An anisotropic conductive adhesive which uses conductive particles where a silver-based metal is used as a conductive layer, having high light reflectance and excellent migration resistance is provided. The anisotropic conductive adhesive includes light reflective conductive particles in an insulating adhesive resin. The light reflective conductive particle includes a light reflective metal layer made of a metal having at least 60% of reflectance at a peak wavelength of 460 nm formed on the surface of a resin particle as a core, and a coating layer made of a silver alloy formed on the surface of the light reflective metal layer. The light reflective metal layer is preferably formed by a plating method.

Abstract: Disclosed is a mixed light LED structure which is a solid-state phosphor plate manufactured by mixing phosphor and resin, and the solid-state phosphor plate is installed in a carrier and covered onto the top of a light emitting chip, and a specific ratio relation between the area of the solid-state phosphor plate and the area of the light emitting chip area or a specific ratio relation between the area of the solid-state phosphor plate and the area of a light emitting hole are used, and also the relation of limiting the distance between the solid-state phosphor plate and the light emitting chip is satisfied, so as to achieve a better mixed light effect and a longer service life of the mixed light LED structure.

Abstract: A light emitting device having a vertical structure and a package thereof, which are capable of damping impact generated in a substrate separation process, and achieving an improvement in mass productivity. The device and package include a sub-mount, a first-type electrode, a second-type electrode, a light emitting device, a zener diode, and a lens on the sub-mount.

Abstract: A light emitting diode includes a first semiconductor layer, an active layer, a second semiconductor layer, an upper electrode, and a lower electrode. The active layer is sandwiched between the first semiconductor layer and the second semiconductor layer. The lower electrode is electrically connected with the first semiconductor layer, and the upper electrode is electrically connected with the second semiconductor layer. A surface of the second semiconductor layer away from the active layer is used as the light extraction surface. A surface of the first semiconductor layer connected with the lower electrode is a patterned surface including a number of grooves.

Abstract: A light source includes a primary radiation source, which emits radiation in the shortwave range of the optical spectral range, wherein this radiation is converted at least by means of a first luminescent substance entirely or partially into secondary longer-wave radiation in the visible spectral range, wherein the first luminescent substance originates from the class of nitridic modified orthosilicates (NOS), wherein the luminescent substance has as a component M predominantly the group EA=Sr, Ba, Ca, or Mg alone or in combination, wherein the activating dopant D is composed at least of Eu and replaces a proportion of M, and wherein a proportion of SiO2 is introduced in deficiency, so that a modified sub-stoichiometric orthosilicate is provided, wherein the orthosilicate is an orthosilicate stabilized with RE and N, where RE=rare earth metal.

Abstract: According to one embodiment, a light-emitting device includes a ceramic substrate, a light-emitting element, a metal layer, a metal connector and a joint member. The ceramic substrate includes a main surface. The light-emitting element is provided on the main surface. The metal layer is provided on the main surface and is electrically connected to the light-emitting element. The metal connector includes a connector part and an extension part extending from the connector part. The joint member joins at least a part of the extension part to the metal layer. An angle between a lower portion of a side surface of the joint member on the connector part side and a lower surface of the joint member in contact with the metal layer is 90 degrees or less. A portion of the extension part on an opposite side to the connector part is partly covered with the joint member.

Abstract: The present application provides an electronic apparatus including a substrate including a first electrode pad, a second electrode pad and an intermediate pad each disposed on one surface of the substrate and separated from one another. An electronic device is disposed on the substrate and including a first electrode unit and a second electrode unit. The first electrode unit has an adhesion surface facing the first electrode pad and the intermediate pad. The second electrode unit has an adhesion surface facing the second electrode pad.

Abstract: There is provided a light-emitting element chip which can be safely assembled and a manufacturing method therefor. A light-emitting element chip 10 has a semiconductor layer 12 including a luminescent layer 12a on a supporting portion 11. The supporting portion 11 has a concave shape, providing a support substrate in this light-emitting element chip 10, and being connected to one electrode on the semiconductor layer 12. The outer peripheral portion of the supporting portion 11 (a supporting portion outer peripheral portion 11a) surrounds the semiconductor layer 12, and is protruded to be set at a level higher than the other face 12d and the n-side electrode 15 of the semiconductor layer 12.

Abstract: Provided are a method of manufacturing a light-emitting element by which a light-emitting element (80) is manufactured through the following steps and a light-emitting element manufactured by employing the method. A light-emitting element layer (40) is formed on one face (32T) of a monocrystalline substrate (30A) for a light-emitting element. Next, the other face (32B) of the monocrystalline substrate (30A) for a light-emitting element is polished until a state where a vertical hole (34A) penetrates the monocrystalline substrate (30A) for a light-emitting element in its thickness direction is established. Next, a conductive material is filled into the vertical hole (34B) from the side of the vertical hole (34B) closer to an opening (36B) in the other face (32B) to form a conductive portion (50) that is continuous from a side closer to the light-emitting element layer (40) to the opening (36B) in the other face (32B).

Abstract: A substrate for light emitting element has a substrate main body, a first recessed part, and a second recessed part. The substrate main body is made of a glass ceramic having a reflectance of 90% or more at a wavelength of 460 nm. The first recessed part is arranged on one main surface of the substrate main body, and has a first area on which a light emitting element is mounted. The second recessed part is arranged in the first recessed part except the first area, and has a second area on which a protection device is mounted.

Abstract: An optoelectronic semiconductor chip includes a semiconductor layer sequence having at least one active layer. Furthermore, the semiconductor chip has a top-side contact structure on a radiation main side of the semiconductor layer sequence and an underside contact structure on an underside situated opposite to the radiation main side. Furthermore, the semiconductor chip includes at last two trenches that extend from the radiation main side towards the underside. As seen in a plan view of the radiation main side, the top-side contact structure and the underside contact structure are arranged in a manner spaced apart from one another. Likewise as seen in a plan view of the radiation main side, the trenches are located between the top-side contact structure and the underside contact structure.

Abstract: An ESD protection circuit includes at least a first and a second silicon controlled rectifier (SCR) circuits. The first SCR circuit is coupled between the pad and the positive power supply terminal. The second SCR circuit is coupled between the pad and the ground terminal. At least one of the SCR circuits is configured to selectively provide a short or relatively conductive electrical path between the pad and one of the positive power supply terminal and the ground terminal.

Abstract: A high-voltage vertical power component including a silicon substrate of a first conductivity type, and a first semiconductor layer of the second conductivity type extending into the silicon substrate from an upper surface of the silicon substrate, wherein the component periphery includes: a porous silicon ring extending into the silicon substrate from the upper surface to a depth deeper than the first layer; and a doped ring of the second conductivity type, extending from a lower surface of the silicon surface to the porous silicon ring.

Abstract: A bipolar semiconductor switch having a semiconductor body is provided. The semiconductor body includes a first p-type semiconductor region, a second p-type semiconductor region, and a first n-type semiconductor region forming a first pn-junction with the first p-type semiconductor region and a second pn-junction with the second p-type semiconductor region. On a shortest path through the first n-type semiconductor region between the first pn-junction and the second pn-junction a concentration of charge recombination centers and a concentration of n-dopants vary. The concentration of the charge recombination centers has a maximum at a point along the shortest path where the concentration of n-dopants is at least close to a maximum dopant concentration. Further, a manufacturing method for the bipolar semiconductor switch is provided.

Abstract: In a semiconductor device, a trench gate has a bottom portion in a drift layer and a communication portion extending from a surface of a base layer to communicate with the bottom portion. A distance between adjacent bottom portions is smaller than a distance between adjacent communication portions in a x-direction. A region between adjacent trench gates is divided in a y-direction into an effective region as an electron injection source and an ineffective region which does not serve as the electron injection source. An interval L1 (>0) of the ineffective region in the y-direction, a length D1 of the communication portion in the z-direction, and a length D2 of the bottom portion in the z-direction satisfy L1?2(D1+D2). The z-direction is orthogonal to a x-y plane defined by the x-direction and the y-direction which are orthogonal to each other.

Abstract: A semiconductor device in which a diode region and an IGBT region are formed on a same semiconductor substrate is provided. The diode region includes a plurality of first conductivity type anode layers exposed to a surface of the semiconductor substrate and separated from each other. The IGBT region includes a plurality of first conductivity type body contact layers that are exposed to the surface of the semiconductor substrate and separated from each other. The anode layer includes at least one or more of the first anode layers. The first anode layer is formed in a position in the proximity of at least IGBT region, and an area of a plane direction of the semiconductor substrate in each of the first anode layers is larger than the area of a plane direction of the semiconductor substrate in the body contact layer in the closest proximity of the diode region.

Abstract: An n-type region encloses an n-type well region is disclosed in which is disposed a high-side drive circuit. A high resistance polysilicon thin film configuring a resistive field plate structure of a high breakdown voltage junction termination region is disposed in spiral form on the n-type region. An OUT electrode, a ground electrode, and a Vcc1 electrode are disposed on the n-type region. The Vcc1 electrode is connected to the positive electrode of an auxiliary direct current power supply (a bootstrap capacitor). The OUT electrode is connected to the negative electrode of the auxiliary direct current power supply. One end portion (a second contact portion) of the high resistance polysilicon thin film is connected to the ground electrode, and the other end portion (a first contact portion) of the high resistance polysilicon thin film is connected to the OUT electrode.

Abstract: Obtaining a structure comprised of first and second layers of a first semiconductor materials and a strain relief buffer (SRB) layer between the first and second layers, forming a sidewall spacer on the sidewalls of an opening in the second layer, and forming a third semiconductor material in the opening, wherein the first, second and third semiconductor materials are different. A device includes first and second layers of first and second semiconductor materials and an SRB layer positioned above the first layer. The second layer is positioned above a first portion of the SRB layer, a region of a third semiconductor material is in an opening in the second layer and above a second portion of the SRB layer, and an insulating material is positioned between the region comprised of the third semiconductor material and the second layer.

Abstract: A semiconductor structure includes a III-V monocrystalline layer and a germanium surface layer. An interlayer is formed directly between the III-V monocrystalline layer and the germanium surface layer from a material selected to provide stronger nucleation bonding between the interlayer and the germanium surface layer than nucleation bonding that would be achievable directly between the III-V monocrystalline layer and the germanium surface layer such that a continuous, relatively defect-free germanium surface layer is provided.

Abstract: A Ga2O3 semiconductor element includes: an n-type ?-Ga2O3 single crystal film, which is formed on a high-resistance ?-Ga2O3 substrate directly or with other layer therebetween; a source electrode and a drain electrode, which are formed on the n-type ?-Ga2O3 single crystal film; and a gate electrode, which is formed on the n-type ?-Ga2O3 single crystal film between the source electrode and the drain electrode.

Abstract: Provided is a high-quality Ga2O3 semiconductor element. Provided is, as one embodiment of the present invention, a Ga2O3 MISFET (10), which includes: an n-type ?-(AlxGa1-x)2O3 single crystal film (3), which is formed on an ?-Al2O3 substrate (2) directly or with other layer therebetween, and is composed of an ?-(AlxGa1-x)2O3 single crystal (0?x<1); a source electrode (12) and a drain electrode (13), which are formed on the n-type ?-(AlxGa1-x)2O3 single crystal film (3); contact regions (14, 15), which are formed in the n-type ?-(AlxGa1-x)2O3 single crystal film (3), and are connected to the source electrode (12) and the drain electrode (13), respectively; and a gate electrode (11), which is formed on a region between the contact region (14) and the contact region (15) in the n-type ?-(AlxGa1-x)2O3 single crystal film (3) with the gate insulating film (16) therebetween.

Abstract: Provided is a high-quality Ga2O3 semiconductor element. Provided is, as one embodiment of the present invention, a Ga2O3 MESFET (10), which includes: an n-type ?-(AlxGa1-x)2O3 single crystal film (3), which is formed on an ?-Al2O3 substrate (2) directly or with other layer therebetween, and is composed of an ?-(AlxGa1-x)2O3 single crystal (0?x?1); a source electrode (12) and a drain electrode (13), which are formed on the n-type ?-(AlxGa1-x)2O3 single crystal film (3); and a gate electrode (11), which is formed on a region between the source electrode (12) and the drain electrode (13) on the n-type ?-(AlxGa1-x)2O3 single crystal film (3).

Abstract: A method for fabricating a mesa sidewall with a spin coated dielectric material and a semiconductor element fabricated by the same are provided in the present invention. The method includes the steps of: disposing an object on a semiconductor substrate; performing a spin coating process to coat with a liquid dielectric material; performing a drying process to dry the liquid dielectric material; performing a first etching process to remove an upper part of the dried dielectric material to expose a metal part (unaffected by ion bombardment) of the object; performing a deposition process to insulate the metal part (unaffected by ion bombardment) of the object; and performing a second etching process to form a semiconductor element with a mesa sidewall.

Abstract: A method for manufacturing of a device including a first substrate including a plurality of sets of nanostructures arranged on the first substrate, wherein each of the sets of nanostructures is individually electrically addressable, the method including the steps of: providing a substrate having a first face, the substrate having an insulating layer including an insulating material arranged on the first face of the substrate forming an interface between the insulating layer and the substrate; providing a plurality of stacks on the first substrate, wherein each stack includes a first conductive layer and a second conductive layer; heating the first substrate having the plurality of stacks arranged thereon in a reducing atmosphere to enable formation of nanostructures on the second conductive material; heating the first substrate having the plurality of stacks arranged thereon in an atmosphere such that nanostructures are formed on the second layer.