Patents Issued in January 29, 2015
  • Publication number: 20150028308
    Abstract: An organic light emitting device including: a first electrode, a hole injection layer on the first electrode, a hole transport layer on the hole injection layer, an organic light emitting layer on the hole transport layer, a first electron transport layer on the organic light emitting layer, a second electron transport layer on the organic light emitting layer, an electron injection layer on the second electron transport layer and a second electrode on the electron injection layer, where the first electron transport layer includes a first material for improving a thermal stability, a second material for improving a luminous efficiency and a third material for reducing a driving voltage, and the second electron transport layer is laminated with the first electron transport layer, and the second electrode faces the first electrode.
    Type: Application
    Filed: July 17, 2014
    Publication date: January 29, 2015
    Inventors: Sun-Hye Lee, Jae-Bok Kim, Won-Jun Song, Myung-Hwan Kim, Ji-Young Kim, Hye-Lim Shin, Tae-Kyu Shim, Yoon-Kyoo Lee
  • Publication number: 20150028309
    Abstract: A light-emitting element display device includes: a thin film transistor substrate including transistors respectively controlling the amounts of light emission of a plurality of sub-pixels arranged in a display region; and a color filter substrate arranged to overlap with the thin film transistor substrate. The thin film transistor substrate includes a light-emitting organic layer covering the entire display region and emitting light in respective light-emitting regions in the plurality of sub-pixels, an insulating bank formed of an insulating material around each of the light-emitting regions, including an inclined surface being closer to the color filter substrate according to increasing in thickness with increasing distance from the light-emitting region, and a fluorescent layer formed on the inclined surface and excited by light of the light-emitting region to thereby emit light.
    Type: Application
    Filed: July 24, 2014
    Publication date: January 29, 2015
    Inventors: Keisuke ONO, Toshihiro SATO
  • Publication number: 20150028310
    Abstract: An organic light-emitting diode (OLED) substrate, which includes a plurality of light-emitting sub-pixels and a pixel partition wall, wherein at least one layer among hole injection layers (HIL), hole transport layers (HTL) and organic light-emitting layers of at least two light-emitting sub-pixels has a different thickness; and upper surfaces of the HIL, the HTL and the organic light-emitting layer of any light-emitting sub-pixel are each parallel and level to an upper surface of one respective lyophilic film layer of the pixel partition wall. The OLED substrate can be used for improving the surface smoothness of each organic layer of the light-emitting sub-pixel. The embodiment of the present invention further provides a display device.
    Type: Application
    Filed: August 6, 2013
    Publication date: January 29, 2015
    Inventors: Qing Dai, Li Sun, Ze Liu
  • Publication number: 20150028311
    Abstract: Disclosed is a doped organic electroluminescent device, comprising the following structures laminated in succession: a conductive anode substrate, a hole injecting layer, a hole transportation layer, an electron barrier layer, a light-emitting layer, an electron transportation layer, an electron injecting layer and a cathode; and the material for the electron barrier layer is a hole transportation material doped with a cerium salt. The material for an electron barrier layer in such a doped organic electroluminescent device is a hole transportation material doped with a cerium salt which has a low work function of approximately ?2.0 eV and can effectively block electrons.
    Type: Application
    Filed: November 28, 2011
    Publication date: January 29, 2015
    Applicants: OCEAN'S KING LIGHTING SCIENCE & TECHNOLOGY CO., LT, SHENZHEN OCEAN'S KING LIGHTING ENGINEERING CO.,LTD
    Inventors: Mingjie Zhou, Ping Wabg, Hui Huang, Xiaoming Feng
  • Publication number: 20150028312
    Abstract: Various embodiments relate to an optoelectronic component, including a first electrode layer, a first organic functional layer structure on or over the first electrode layer, a nontransparent second electrode layer on or over the first organic functional layer structure, a second organic functional layer structure on or over the second electrode layer, and a third electrode layer on or over the second organic functional layer structure. The material for the second electrode layer is selected in such a way that a matt impression of at least one side of the optoelectronic component is imparted.
    Type: Application
    Filed: January 7, 2013
    Publication date: January 29, 2015
    Inventors: Erwin Lang, Thomas Dobbertin
  • Publication number: 20150028313
    Abstract: A polymer comprising an optionally substituted repeat unit of formula (I): wherein R1 and R2 in each occurrence are independently selected from H or a substituent; R1 and R2 may be linked to form a ring; and A is an optionally substituted linear, branched or cyclic alkyl group.
    Type: Application
    Filed: January 31, 2013
    Publication date: January 29, 2015
    Inventors: Jonathan Pillow, Natasha M.J. Conway
  • Publication number: 20150028314
    Abstract: Provided is an organic electroluminescent light emitting device that can prevent moisture and/or oxygen permeation to thereby suppress degradation and that has increased light extraction efficiency. The organic electroluminescent light emitting device includes an organic electroluminescent element including an optically transparent first electrode, a light emitting function layer composed of two or more layers including a light emitting layer, and a second electrode, which are stacked on a surface of an optically transparent substrate in that order. A functional scattering section is provided in contact with at least part of an end face of the optically transparent substrate. The functional scattering section is foamed of a resin composition including a scattering body having moisture absorption property and/or oxygen absorption property. With the functional scattering section, moisture and/or oxygen can be prevented from entering inside the device and the light extraction efficiency can be enhanced.
    Type: Application
    Filed: February 8, 2013
    Publication date: January 29, 2015
    Inventor: Hirofumi Kubota
  • Publication number: 20150028315
    Abstract: An organic light-emitting device includes at least an underlayer, a partition wall, and an organic film. The underlayer is disposed above a substrate. The partition wall covers a first part and surrounds a second part of the surface of the underlayer. The organic film includes organic material, is disposed in a recess formed by the partition wall surrounding the second part, and is in contact with the surface of the underlayer and a surface of the partition wall. The surface of the underlayer has a protruding portion that protrudes in an upward direction. The protruding portion is composed of a top surface and an inclined surface surrounding the top surface. The first part includes least the top surface and a portion of the inclined surface, and an inner edge of the partition wall is in contact with the inclined surface or a level portion of the surface of the underlayer.
    Type: Application
    Filed: August 2, 2012
    Publication date: January 29, 2015
    Applicant: PANASONIC CORPORATION
    Inventors: Masaki Nishimura, Hideaki Matsushina, Yumeji Takashige
  • Publication number: 20150028316
    Abstract: In a light emitting panel, organic EL panels are laminated in a step-like shape in a front-back direction to form organic EL panel groups, and the organic EL panel groups are further laminated in a step-like shape in a left-right direction. Each of the organic EL panels comprises a power feed part at one side of the transparent support substrate in the left-right direction. The power feed part of each of the organic EL panels is aligned with other power feed parts in the front-back direction at one side of the left-right direction, and is disposed at a position that allows the power feed part to overlap with a laminate of an organic EL panel of an adjacent organic EL panel group.
    Type: Application
    Filed: December 3, 2012
    Publication date: January 29, 2015
    Applicant: KONICA MINOLTA, INC.
    Inventors: Shigeru Kojima, Kazuo Genda
  • Publication number: 20150028317
    Abstract: The organic electroluminescent element has a transparent substrate, a transparent first electrode, an organic layer, a second electrode, and a light-outcoupling layer. The light-outcoupling layer is formed between the transparent substrate and the first electrode. The first electrode, the organic layer and the second electrode constitute an electroluminescent laminate. A covering substrate facing the transparent substrate is adhered to the surface of the transparent substrate via an adhesive sealing portion surrounding the periphery of the electroluminescent laminate. A connection electrode extending outward from inside a surrounded region where the electroluminescent laminate is covered with the covering substrate is formed at least on the surface of the light-outcoupling layer. The average thickness of the light-outcoupling layer in an adhesion region where the adhesive sealing portion is formed is smaller than the thickness in the central region where the electroluminescent laminate is formed.
    Type: Application
    Filed: March 12, 2013
    Publication date: January 29, 2015
    Applicant: PANASONIC CORPORATION
    Inventors: Tsutomu Ichihara, Yoshiharu Sanagawa, Nobuhiro Ide, Hirofumi Kubota
  • Publication number: 20150028318
    Abstract: An organic optoelectronic device has a first substrate, on which a functional layer stack having at least one first electrode, thereabove an organic functional layer and thereabove a second electrode is arranged. A encapsulating arrangement includes a second substrate, on which a connecting material and at least one spacer facing the functional layer stack are applied. The connecting material is arranged between the first and second substrate and mechanically connects the first and second substrate together. The functional layer stack is enclosed by the connecting material in a frame-like manner. At least one of the first and second electrode includes at least one opening, above which the at least one spacer is arranged and which has a larger lateral dimension that the spacer.
    Type: Application
    Filed: March 1, 2013
    Publication date: January 29, 2015
    Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
    Inventors: Tilman Schlenker, Marc Philippens
  • Publication number: 20150028319
    Abstract: A method for producing an organic EL device and the organic EL device, capable of enhancing reliability of the organic EL device by suppressing peeling caused by stress concentration to each layer end through reduction in the stress concentration even in the case of using a roll-to-roll process. The method includes: supplying a substrate from a delivery roll to a wind-up roll; forming a first electrode layer over the substrate; forming an organic EL layer over the first electrode layer; and forming a second electrode layer over the organic EL layer. The first electrode layer s formed using a shadow mask. At least a part of a side surface of the first electrode layer is a tapered surface of inwardly sloping from a lower side toward an upper side. An angle formed between the tapered surface and the surface of the substrate on the side over which the first electrode layer is formed is 1° or less.
    Type: Application
    Filed: February 27, 2013
    Publication date: January 29, 2015
    Applicant: NITTO DENKO CORPORATION
    Inventors: Takahiro Nakai, Shigenori Morita, Hiroshi Sunagawa
  • Publication number: 20150028320
    Abstract: Provided is a transparent electrode having both sufficient conductivity and light transmittance, and also provided is an electronic device which improves performance by using said transparent electrode. Further provided is method of manufacturing said transparent electrode. This transparent electrode is provided with a nitrogen-containing layer and an electrode layer. The nitrogen-containing layer is formed at a deposition speed of 0.3 nm/s or greater, and is configured using a compound containing nitrogen atoms. Further, the electrode layer is provided adjacent to the nitrogen-containing layer, has a 12 nm or lower film thickness and a measurable sheet resistance, and is configured using silver or an alloy having silver as the main component.
    Type: Application
    Filed: April 15, 2013
    Publication date: January 29, 2015
    Inventors: Toshiyuki Kinoshita, Takeshi Hakii, Hiroshi Ishidai, Kazuhiro Yoshida, Minako Ono, Takatoshi Tsujimura
  • Publication number: 20150028321
    Abstract: There is provided a compound having Formula I In the formula: Ar can be phenyl, biphenyl, or terphenyl, and can optionally have one or more substituents which can be D, alkyl, silyl, deuterated alkyl, or deuterated silyl; R1 can be alkyl, silyl, aryl, heteroaryl, deuterated alkyl, deuterated silyl, deuterated aryl, or deuterated heteroaryl; R2-R11 are the same or different and can be H, D, alkyl, silyl, deuterated alkyl, or deuterated silyl.
    Type: Application
    Filed: March 21, 2013
    Publication date: January 29, 2015
    Inventors: Norman Herron, Weiying Gao
  • Publication number: 20150028322
    Abstract: Use of certain materials in hole injection or hole transport layers can improve the operational lifetimes in organic electronic devices. Compositions comprising a doped conjugated polymer, doped with a redox dopant, including iodonium salt, can increase lifetimes. Inks can be formulated and cast as films in organic electronic devices including OLEDs, PHOLEDs, and OPVs. One embodiment provides a composition with a conjugated polymer doped with a redox dopant. Non-aqueous based inks can be formulated. Iodonium salts can be used.
    Type: Application
    Filed: August 5, 2014
    Publication date: January 29, 2015
    Inventors: Venkataramanan SESHADRI, Christopher T. BROWN, Jessica BENSON-SMITH, Edward S. YANG
  • Publication number: 20150028323
    Abstract: Novel phosphorescent tetradentate platinum (II) compounds comprising a twisted aryl group are provided. Also provided are novel phosphorescent tetradentate platinum (II) compounds comprising an imidazo[1,2-f]phenanthridine moiety. The compounds may be used in organic light emitting devices to provide improved device efficiency, line shape and lifetime.
    Type: Application
    Filed: October 7, 2014
    Publication date: January 29, 2015
    Applicant: Universal Display Corporation
    Inventors: Chuanjun XIA, Walter YEAGER, David Zenan LI, James FIORDELISO, Bin MA, Zeinab ELSHENAWY, Suman LAYEK, Ed BARRON, Gregg KOTTAS, Jason BROOKS
  • Publication number: 20150028324
    Abstract: A display device includes, on a substrate, light emitting elements each formed by sequentially stacking a first electrode layer, an organic layer including a light emission layer, and a second electrode layer and arranged in first and second directions which cross each other, a drive circuit including drive elements that drive light emitting elements, and a wiring extending in the first direction, and an insulating layer disposed in a gap region sandwiched by the light emitting elements neighboring in the second direction and having a recess or a projection. The wiring is disposed in an overlap region overlapping with the recess or the projection in the insulating layer in a thickness direction, in the gap region, and the second electrode layers in the light emitting elements neighboring in the second direction are separated from each other by the recess or the projection in the insulating layer.
    Type: Application
    Filed: October 10, 2014
    Publication date: January 29, 2015
    Inventor: Hiroshi Sagawa
  • Publication number: 20150028325
    Abstract: A mold for transferring a fine pattern, suitable for producing a substrate having a concave-convex structure such as a diffraction grating, can be provided by a simple process and with a high throughput. A method for producing a mold for transferring a fine pattern includes: a step of coating a surface of a base member with a solution containing a block copolymer and polyalkylene oxide; a solvent phase-separation step of phase-separating the block copolymer under a presence of vapor of an organic solvent so as to obtain a block copolymer film of the block copolymer, the block copolymer film having a concave-convex structure on a surface thereof and a horizontal cylinder structure in an interior thereof; a step of stacking a metal layer by electroforming; and a step of releasing the base member having the concave-convex structure formed thereon from the metal layer.
    Type: Application
    Filed: October 14, 2014
    Publication date: January 29, 2015
    Inventors: Takashi SEKI, Satoshi MASUYAMA, Maki FUKUDA, Suzushi NISHIMURA
  • Publication number: 20150028326
    Abstract: A thin film transistor includes a gate electrode, a channel layer, a source electrode, and a drain electrode. The channel layer is made of an amorphous oxide semiconductor. The channel layer includes one high oxygen ion concentration region, or two high oxygen ion concentration regions one above the other. An oxygen ion density of each high oxygen ion concentration region is in a range of from about 1×1018 to about 1×1021 per cubic centimeter. A thin film transistor substrate and a method of manufacturing the thin film transistor substrate are also provided.
    Type: Application
    Filed: December 31, 2013
    Publication date: January 29, 2015
    Applicant: Ye Xin Technology Consulting Co., Ltd.
    Inventor: ANJO KENJI
  • Publication number: 20150028327
    Abstract: A thin film transistor includes a substrate, a gate electrode, a buffer layer, a gate insulating layer, an active layer, an etching stop layer, a source electrode and a drain electrode. The gate electrode is formed on the substrate. The buffer layer partially covers both side portions of the gate electrode. The gate insulating layer covers the gate electrode and the buffer layer. The active layer is formed on the gate insulating layer. The etching stop layer is formed on the active layer, and has a first opening and a second opening on the active layer. The source electrode is formed on the etching stop layer, and contacts with the active layer through the first opening. The drain electrode is formed on the etching stop layer, and is contacted with the active layer through the second opening.
    Type: Application
    Filed: July 14, 2014
    Publication date: January 29, 2015
    Inventors: Jung-Bae KIM, Bo-Yong CHUNG, Hae-Yeon LEE, Yong-Jae KIM
  • Publication number: 20150028328
    Abstract: A non-breakable display device, electronic appliance, or lighting device is provided. A bendable display device in which a first flexible substrate and a second flexible substrate provided with transistors overlap each other with a bonding layer therebetween is fabricated. The display device is bent so that the first substrate is positioned on the inner side (the valley side) and the second substrate is positioned on the outer side (the mountain side).
    Type: Application
    Filed: July 21, 2014
    Publication date: January 29, 2015
    Inventors: Hisao Ikeda, Hideki Uochi
  • Publication number: 20150028329
    Abstract: The number of oxide semiconductor layers is increased with the parallel connection of a first transistor and a second transistor. The parasitic capacitance effects on the driving of the transistor. An oxide semiconductor layer has a first channel formation region and a second channel formation region. Over the oxide semiconductor layer, a source electrode and a drain electrode are placed. An insulating layer is placed over the source electrode and the drain electrode. A gate electrode is placed over the insulating layer. The gate electrode has an opening. The opening overlaps with the source electrode or the drain electrode.
    Type: Application
    Filed: July 22, 2014
    Publication date: January 29, 2015
    Inventor: Hideki MATSUKURA
  • Publication number: 20150028330
    Abstract: Provided is a semiconductor device in which a deterioration in electrical characteristics which becomes more noticeable as miniaturization can be suppressed. The semiconductor device includes a first oxide semiconductor film over an insulating surface; a second oxide semiconductor film over the first oxide semiconductor film; a source electrode and a drain electrode in contact with each side surface of the first oxide semiconductor film and the second oxide semiconductor film; a first insulating film and a second insulating film over the source electrode and the drain electrode; a third oxide semiconductor film over the second oxide semiconductor film, the source electrode, and the drain electrode; a gate insulating film over the third oxide semiconductor film; and a gate electrode in contact with an upper surface of the gate insulating film and facing an upper surface and the side surface of the second oxide semiconductor film.
    Type: Application
    Filed: July 22, 2014
    Publication date: January 29, 2015
    Inventors: Shunpei Yamazaki, Shinya Sasagawa, Suguru Hondo, Hideomi Suzawa
  • Publication number: 20150028331
    Abstract: Provided are a thin-film transistor (TFT), a method of manufacturing the same, and a method of manufacturing a backplane for a flat panel display (FPD). The method of manufacturing the TFT according to an embodiment of the present invention includes forming a gate electrode on a substrate; forming an insulating layer on the substrate to cover the gate electrode; performing a plasma treatment on an upper surface of the insulating layer using a halogen gas; forming an oxide semiconductor layer on the insulating layer and positioned to correspond to the gate electrode; and forming source and drain electrodes on the insulating layer to contact and over portions of the oxide semiconductor layer.
    Type: Application
    Filed: July 23, 2014
    Publication date: January 29, 2015
    Inventors: Young-Gug Seol, Tae-Woong KIM, Jin Jang, Christophe Avis
  • Publication number: 20150028332
    Abstract: This semiconductor device (100) includes a substrate (1), a gate electrode (11), a gate insulating film (12), an oxide semiconductor layer (13), a source electrode (14), a drain electrode (15), and a protective film (16). The upper and side surfaces of the oxide semiconductor layer are covered with the source and drain electrodes and the protective film. When viewed along a normal to the substrate, the narrowest gap between the respective outer peripheries of a first contact region (13s) and the source electrode and the narrowest gap between the respective outer peripheries of a second contact region (13d) and the drain electrode both have a length of 1.5 ?m to 4.5 ?m.
    Type: Application
    Filed: December 28, 2012
    Publication date: January 29, 2015
    Inventor: Akihiro Oda
  • Publication number: 20150028333
    Abstract: A metal matrix composite having high corrosion resistance even if the coating film deposit amount is low is obtained. A metal matrix composite includes a metal or alloy substrate coated with a molten transition metal oxide glass, wherein the transition metal oxide glass has an n-type polarity. Further, a method for producing a metal matrix composite includes a step of applying a paste containing a transition metal oxide glass, an organic binder, and an organic solvent onto the surface of a metal or alloy substrate, and a step of forming a glass coating film on the substrate by heating to and maintaining a temperature equal to or higher than the softening point of the transition metal oxide glass after the application step, wherein the transition metal oxide glass has an n-type polarity.
    Type: Application
    Filed: January 15, 2013
    Publication date: January 29, 2015
    Applicant: HITACHI, LTD.
    Inventors: Tadashi Fujieda, Takashi Naito, Takuya Aoyagi, Yuichi Sawai
  • Publication number: 20150028334
    Abstract: To provide an electroconductive thin film, containing: a metal oxide containing indium and tin; and gold.
    Type: Application
    Filed: March 14, 2013
    Publication date: January 29, 2015
    Applicant: RICOH COMPANY, LTD.
    Inventors: Shinji Matsumoto, Naoyuki Ueda, Yuki Nakamura, Yukiko Abe, Mikiko Takada, Yuji Sone, Ryoichi Saotome
  • Publication number: 20150028335
    Abstract: An imaging device capable of obtaining image data with a small amount of X-ray irradiation is provided. The imaging device obtains an image using X-rays and includes a scintillator and a plurality of pixel circuits arranged in a matrix and overlapping with the scintillator. The use of a transistor with an extremely small off-state current in the pixel circuits enables leakage of electrical charges from a charge accumulation portion to be reduced as much as possible, and an accumulation operation to be performed substantially at the same time in all of the pixel circuits. The accumulation operation is synchronized with X-ray irradiation, so that the amount of X-ray irradiation can be reduced.
    Type: Application
    Filed: September 11, 2014
    Publication date: January 29, 2015
    Inventors: Yoshiyuki KUROKAWA, Takayuki IKEDA
  • Publication number: 20150028336
    Abstract: An active device array substrate includes a flexible substrate, a gate electrode, a dielectric layer, a channel layer, a source electrode, a drain electrode, and a pixel electrode. The flexible substrate has a transistor region and a transparent region adjacent to each other. The gate electrode is disposed on the transistor region. The dielectric layer covers the flexible substrate and the gate electrode. A portion of the dielectric layer disposed on the gate electrode has a first thickness. Another portion of the dielectric layer disposed on the transparent region has a second thickness less than the first thickness. The channel layer is disposed above the gate electrode. The source electrode and the drain electrode are electrically connected to the channel layer. The pixel electrode is disposed on the dielectric layer which is disposed on the transparent region. The pixel electrode is electrically connected to the drain electrode.
    Type: Application
    Filed: September 15, 2014
    Publication date: January 29, 2015
    Inventors: Jia-Hong YE, Ssu-Hui LU, Wu-Hsiung LIN, Chao-Chien CHIU, Ming-Hsien LEE, Chia-Tien PENG, Wei-Ming HUANG
  • Publication number: 20150028337
    Abstract: An electronic device includes a semiconductor structure. A first temperature sensor is located at a hot spot of the semiconductor structure and a second temperature sensor is located at a cold spot of the semiconductor structure. A control block is configured to control current flow through the semiconductor structure. For example, the control block is configured to cut off the current flow through the semiconductor structure when a temperature at the hot spot exceeds a first predefined threshold or when a temperature difference between the temperature at the hot spot and a temperature at the cold spot exceeds a second predefined threshold.
    Type: Application
    Filed: July 26, 2013
    Publication date: January 29, 2015
    Inventor: Veli Kartal
  • Publication number: 20150028338
    Abstract: A common interconnect ring is provided at a periphery of a portion used to form a TFT array of an X-ray flat panel detector, and an X-ray flat panel detector TFT array substrate connected to signal lines and scanning lines via pairs of two protection diodes connected in parallel and having mutually-reverse polarities is manufactured. When inspecting the X-ray flat panel detector TFT array substrate, the same reference bias voltage as the amplifier of a detection circuit is applied from an external voltage application pad provided at the vicinity of a connection unit for the common interconnect ring and the protection diodes on the same side of the signal lines, a signal is provided to a scanning line connection pad to switch the thin film transistor ON, and an electrical signal flowing through the signal line is read from a signal line connection pad.
    Type: Application
    Filed: October 17, 2014
    Publication date: January 29, 2015
    Applicants: Kabushiki Kaisha Toshiba, Toshiba Electron Tubes & Devices Co., Ltd.
    Inventors: Hiroshi IWATA, Mitsushi IKEDA
  • Publication number: 20150028339
    Abstract: A semiconductor device including: one or more pieces of first wiring having a main wiring section and a bifurcation wiring section; one or a plurality of pieces of second wiring having a trunk wiring section and a plurality of branch wiring sections within a gap region between the main wiring section and the bifurcation wiring section; one or a plurality of transistors each divided and formed into a plurality of pieces, the plurality of branch wiring sections individually functioning as a gate electrode and the one or plurality of transistors having a source region formed within the main wiring section and within the bifurcation wiring section and having a drain region formed between the plurality of branch wiring sections; and one or a plurality of pieces of third wiring electrically connected to the drain region of the one or plurality of transistors.
    Type: Application
    Filed: October 15, 2014
    Publication date: January 29, 2015
    Inventors: Mitsufumi Sogabe, Masaki Murase, Hiroshi Mizuhashi
  • Publication number: 20150028340
    Abstract: Source wires having a semiconductor film thereunder are formed wide within a range that does not overlap pixel electrodes formed later. Thereafter, a resist pattern for use in patterning the pixel electrodes is formed so as to overlap edge portions of the source wires, and etching using the resist pattern as a mask is performed, whereby the pixel electrodes are formed, and in addition, the edge portions of the source wires are removed, whereby a structure in which the semiconductor film has a portion projecting beyond the source wires on both sides is formed.
    Type: Application
    Filed: July 21, 2014
    Publication date: January 29, 2015
    Applicant: MITSUBISHI ELECTRIC CORPORATION
    Inventors: Toshihiko IWASAKA, Makoto HIRAKAWA
  • Publication number: 20150028341
    Abstract: An array substrate includes a substrate and data lines and scan lines arranged on the substrate, The data lines and the scan lines define plural pixel regions. A thin film transistor is arranged in each pixel region and includes a gate electrode, a source electrode, a drain electrode, and an active region. The gate electrode is arranged above the active region. The source electrode and the drain electrode are arranged at two opposite sides of the active region respectively. A light shielding metal layer is further arranged in each pixel region. The light shielding metal layer and the data lines are arranged in the same layer on the substrate. The light shielding metal layer is arranged under the active region and at least partially overlaps with the active region. The data line is close to the source electrode and does not overlap with the active region at least partially.
    Type: Application
    Filed: December 18, 2013
    Publication date: January 29, 2015
    Applicants: BOE Technology Group Co., Ltd., Ordos Yuansheng Optoelectronics Co., Ltd.
    Inventors: Jian Sun, Cheng Li, Seongjun An, Bongyeol Ryu
  • Publication number: 20150028342
    Abstract: An array substrate, a manufacturing method thereof and a display device are provided, and the array substrate comprises: a substrate (1); a plurality of data lines (16), formed on the substrate and extending in a first direction; a plurality of gate lines (15), formed on the substrate (1), crossing the plurality of data lines (15), and extending in a second direction perpendicular to the first direction; a plurality of pixel regions, defined by the plurality of gate lines (15) and the plurality of data lines (15) crossing each other and arranged in a matrix form, wherein each of the pixel regions is provided with a thin film transistor and a pixel electrode (12), wherein, the thin film transistor comprises: a gate electrode (2), connected with one of the plurality of gate lines (15); a gate insulating layer (3), provided above the gate line (15) and the gate electrode (2); an active layer (5), formed on the gate insulating layer (3) and disposed corresponding to the gate electrode (2); a drain electrode (8) a
    Type: Application
    Filed: October 31, 2013
    Publication date: January 29, 2015
    Applicant: BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Heecheol Kim, Youngsuk Song, Seongyeol Yoo, Seungjin Choi
  • Publication number: 20150028343
    Abstract: A display panel is discloses. A gate line and a gate connection line of an array substrate are disposed perpendicular to each other. A passivation layer is formed on a side of a source electrode or a drain electrode of the array substrate which is close to the color filter substrate. A first via hole is disposed in the passivation layer. A color filter substrate includes a first substrate, and a data line parallel to the gate connection line is formed on a side of the first substrate which is close to the array substrate. A protection layer, a black matrix and a common electrode are sequentially formed on a side of the data line which is close to the array substrate. A second via hole is disposed in a region of the protection layer, the black matrix and the common electrode which corresponds to the data line.
    Type: Application
    Filed: November 27, 2013
    Publication date: January 29, 2015
    Inventor: Fan Li
  • Publication number: 20150028344
    Abstract: A pixel includes a load, a transistor which controls a current supplied to the load, a storage capacitor, and first to fourth switches. By inputting a potential in accordance with a video signal into the pixel after the threshold voltage of the transistor is held in the storage capacitor, and holding a voltage of the sum of the threshold voltage and the potential, variations of a current value caused by variations of threshold voltage of a transistor can be suppressed. Consequently, a predetermined current can be supplied to the load such as a light-emitting element. Further, by changing the potential of a power supply line, a display device with a high duty ratio can be provided.
    Type: Application
    Filed: October 15, 2014
    Publication date: January 29, 2015
    Inventor: Hajime Kimura
  • Publication number: 20150028345
    Abstract: A transistor includes a substrate, a channel layer over the substrate, an active layer over the channel layer, a metal diffusion barrier over the active layer, and a gate over the metal diffusion barrier. The active layer has a band gap discontinuity with the channel layer.
    Type: Application
    Filed: July 23, 2013
    Publication date: January 29, 2015
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: King-Yuen WONG, Po-Chih CHEN, Chen-Ju YU, Fu-Chih YANG, Jiun-Lei Jerry YU, Fu-Wei YAO, Ru-Yi SU, Yu-Syuan LIN
  • Publication number: 20150028346
    Abstract: Semiconductor structures and techniques are described which enable forming aluminum nitride (AIN) based devices by confining carriers in a region of AIN by exploiting the polar nature of AIN materials. Embodiments of AIN transistors utilizing polarization-based carrier confinement are described.
    Type: Application
    Filed: December 21, 2012
    Publication date: January 29, 2015
    Applicant: Massachusetts Institute of Technology
    Inventors: Tomas Apostol Palacios, Tatsuya Fujishima
  • Publication number: 20150028347
    Abstract: Light emitting diodes and associated methods of manufacturing are disclosed herein. In one embodiment, a light emitting diode (LED) includes a substrate, a semiconductor material carried by the substrate, and an active region proximate to the semiconductor material. The semiconductor material has a first surface proximate to the substrate and a second surface opposite the first surface. The second surface of the semiconductor material is generally non-planar, and the active region generally conforms to the non-planar second surface of the semiconductor material.
    Type: Application
    Filed: October 9, 2014
    Publication date: January 29, 2015
    Inventors: Scott D. Schellhammer, Scott E. Sills, Lifang Xu, Thomas Gehrke, Zaiyuan Ren, Anton J. De Villiers
  • Publication number: 20150028348
    Abstract: Approaches for isolating source and drain regions in an integrated circuit (IC) device (e.g., a fin field effect transistor (finFET)) are provided. Specifically, the FinFET device comprises a gate structure formed over a finned substrate; an isolation oxide beneath an active fin channel of the gate structure; an embedded source and a drain (S/D) formed adjacent the gate structure and the isolation oxide; and an epitaxial (epi) bottom region of the embedded S/D, the epi bottom region counter doped to a polarity of the embedded S/D. The device further includes a set of implanted regions implanted beneath the epi bottom region, wherein the set of implanted regions may be doped and the epi bottom region undoped. In one approach, the embedded S/D comprises P++ doped Silicon Germanium (SiGe) for a p-channel metal-oxide-semiconductor field-effect transistor (PMOSFET) and N++ Silicon Nitride (SiN) for a n-channel metal-oxide-semiconductor field-effect transistor (NMOSFET).
    Type: Application
    Filed: July 23, 2013
    Publication date: January 29, 2015
    Applicant: GLOBALFOUNDRIES Inc.
    Inventors: Ajey Poovannummoottil Jacob, Murat K. Akarvardar
  • Publication number: 20150028349
    Abstract: Methods and structures for forming strained-channel finFETs are described. Fin structures for finFETs may be formed in two epitaxial layers that are grown over a bulk substrate. A first thin epitaxial layer may be cut and used to impart strain to an adjacent channel region of the finFET via elastic relaxation. The structures exhibit a preferred design range for increasing induced strain and uniformity of the strain over the fin height.
    Type: Application
    Filed: July 29, 2013
    Publication date: January 29, 2015
    Applicant: STMicroelectronics, Inc.
    Inventors: Nicolas Loubet, Pierre Morin
  • Publication number: 20150028350
    Abstract: Methods of forming a semiconductor structure include the use of channeled implants into silicon carbide crystals. Some methods include providing a silicon carbide layer having a crystallographic axis, heating the silicon carbide layer to a temperature of about 300° C. or more, implanting dopant ions into the heated silicon carbide layer at an implant angle between a direction of implantation and the crystallographic axis of less than about 2°, and annealing the silicon carbide layer at a time-temperature product of less than about 30,000° C.-hours to activate the implanted ions.
    Type: Application
    Filed: May 19, 2014
    Publication date: January 29, 2015
    Applicant: Cree, Inc.
    Inventors: Alexander V. Suvorov, Vipindas Pala
  • Publication number: 20150028351
    Abstract: A semiconductor device structure according to some embodiments includes a silicon carbide substrate having a first conductivity type, a silicon carbide drift layer having the first conductivity type on the silicon carbide substrate and having an upper surface opposite the silicon carbide substrate, and a buried junction structure in the silicon carbide drift layer. The buried junction structure has a second conductivity type opposite the first conductivity type and has a junction depth that is greater than about one micron.
    Type: Application
    Filed: June 5, 2014
    Publication date: January 29, 2015
    Inventors: Edward Robert Van Brunt, Alexander V. Suvorov, Vipindas Pala, Lin Cheng
  • Publication number: 20150028352
    Abstract: [Object] To provide a semiconductor device with which an increase in on-resistance can be suppressed even if a voltage is continuously applied for a long period of time across a source and a drain in a gate-off state. [Solution Means] A semiconductor device 1 includes a substrate 7 made of an n+ type SiC and having a predetermined off-angle, a drift layer 8 made of an n? type SiC and formed on the substrate 7, a plurality of unit cells 10 demarcated in the drift layer 8 by n? type epitaxial lines 13 including first lines 11 parallel to an off-direction of the substrate 7 and second lines 12 intersecting the first lines 11, a gate insulating film 17 formed on the drift layer 8, a gate electrode 18 formed on the gate insulating film 17, and a p? type relaxation layer 24 formed in the first lines 11 in the drift layer 8 and relaxing an electric field generated in the gate insulating film 17.
    Type: Application
    Filed: February 15, 2013
    Publication date: January 29, 2015
    Inventor: Keiji Okumura
  • Publication number: 20150028353
    Abstract: A detection device, along with methods of its manufacture and use, is provided. The detection device can include: a SiC substrate defining a substrate surface cut from planar to about 12°; a buffer epitaxial layer on the substrate surface; a n-type epitaxial layer on the buffer epitaxial layer; and a top contact on the n-type epitaxial layer. The buffer epitaxial layer can include a n-type 4H—SiC epitaxial layer doped at a concentration of about 1×1015 cm?3 to about 5×1018 cm?3 with nitrogen, boron, aluminum, or a mixture thereof. The n-type epitaxial layer can include a n-type 4H—SiC epitaxial layer doped at a concentration of about 1×1013 cm?3 to about 5×1015 cm?3 with nitrogen. The top contact can have a thickness of about 8 nm to about 15 nm.
    Type: Application
    Filed: July 28, 2014
    Publication date: January 29, 2015
    Inventors: Krishna C. Mandal, J. Russell Terry
  • Publication number: 20150028354
    Abstract: Methods of forming silicon carbide power devices are provided. An n? silicon carbide layer is provided on a silicon carbide substrate. A p-type silicon carbide well region is provided on the n? silicon carbide layer. A buried region of p+ silicon carbide is provided on the p-type silicon carbide well region. An n+ region of silicon carbide is provided on the buried region of p+ silicon carbide. A channel region of the power device is adjacent the buried region of p+ silicon carbide and the n+ region of silicon carbide. An n? region is provided on the channel region and a portion of the n? region is removed from the channel region so that a portion of the n? region remains on the channel region to provide a reduction in a surface roughness of the channel region.
    Type: Application
    Filed: September 10, 2014
    Publication date: January 29, 2015
    Inventors: Mrinal K. Das, Michael Laughner
  • Publication number: 20150028355
    Abstract: A semiconductor device having dislocations and a method of fabricating the semiconductor device is disclosed. The exemplary semiconductor device and method for fabricating the semiconductor device enhance carrier mobility. The method includes providing a substrate having an isolation feature therein and two gate stacks overlying the substrate, wherein one of the gate stacks is atop the isolation feature. The method further includes performing a pre-amorphous implantation process on the substrate. The method further includes forming a stress film over the substrate. The method also includes performing an annealing process on the substrate and the stress film.
    Type: Application
    Filed: October 14, 2014
    Publication date: January 29, 2015
    Inventors: Ziwei Fang, Tsan-Chun Wang, De-Wei Yu
  • Publication number: 20150028356
    Abstract: Disclosed herein is a light emitting diode having a multi-junction structure and a method of fabricating the same. In the light emitting diode, each light emitting structure has a column shape and includes two light emitting layers centered on a p-type semiconductor layer. In addition, a p-type electrode is formed on a side surface of the p-type semiconductor layer, and a p-type electrode is formed through formation and removal of a sacrificial layer. Through this process, the p-type electrode can be formed as a side electrode.
    Type: Application
    Filed: July 25, 2014
    Publication date: January 29, 2015
    Inventors: Dong-Seon LEE, Dukjo KONG, Chang Mo KANG
  • Publication number: 20150028357
    Abstract: This invention relates to a package structure of an optical module. A light emitting and light receiving chips are disposed on a light emitting and light receiving region of the substrate, respectively. Two encapsulating gels cover the light emitting chip and the light receiving chip, respectively, and form a first and a second hemispherical lens portions on the light emitting chip and the light receiving chip, respectively. A cover is affixed on the substrate and each of the encapsulating gels and has a light emitting hole and a light receiving hole, wherein the first and the second lens portions are accommodated, respectively. An engaging means is formed on an adjacent surface between each encapsulating gels and the cover in a horizontal direction. Thereby, the package structure of the optical module of the present invention increases the connection region between each encapsulating gels and the cover to enhance the engagement.
    Type: Application
    Filed: November 5, 2013
    Publication date: January 29, 2015
    Applicant: Lingsen Precision Industries, Ltd
    Inventors: Ming-Te TU, Yao-Ting YEH