Abstract: A two-step gasification process and apparatus for the conversion of solid or liquid organic waste into clean fuel, suitable for use in a gas engine or a gas burner, is described. The waste is fed initially into a primary gasifier, which is a graphite arc furnace. Within the primary gasifier, the organic components of the waste are mixed with a predetermined amount of air, oxygen or steam, and converted into volatiles and soot. The volatiles consist mainly of carbon monoxide and hydrogen, and may include a variety of other hydrocarbons and some fly ash. The gas exiting the primary gasifier first passes through a hot cyclone, where some of the soot and most of the fly ash is collected and returned to the primary gasifier.

Abstract: In one embodiment, a membrane of proton-electron conducting ceramics that is useful for the conversion of a hydrocarbon and steam to hydrogen has a porous support coated with a film of a Perovskite-type oxide. By including the Zr and M in the oxide in place of Ce, the stability can be improved while maintaining sufficient hydrogen flux for efficient generation of hydrogen. In this manner, the conversion can be carried out by performing steam methane reforming (SMR) and/or water-gas shift reactions (WGS) at high temperature, where the conversion of CO to CO2 and H2 is driven by the removal of H2 to give high conversions.

Abstract: Processes are disclosed for the conversion of biomass to oxygenated organic compound using a simplified syngas cleanup operation that is cost effective and protects the fermentation operation. The processes of this invention treat the crude syngas from the gasifier by non-catalytic partial oxidation. The partial oxidation reduces the hydrocarbon content of the syngas such as methane, ethylene and acetylene to provide advantageous gas feeds for anaerobic fermentations to produce oxygenated organic compounds such as ethanol, propanol and butanol. Additionally, the partial oxidation facilitates any additional cleanup of the syngas as may be required for the anaerobic fermentation. Producer gases and partial oxidation processes are also disclosed.

Abstract: The present invention relates to organic copolymers and organic semiconducting compositions comprising these materials, including layers and devices comprising such organic semiconductor compositions. The invention is also concerned with methods of preparing such organic semiconductor compositions and layers and uses thereof. The invention has application in the field of printed electronics and is particularly useful as the semiconducting material for use in formulations for organic thin film-transistor (OFET) backplanes for displays, integrated circuits, organic light emitting diodes (OLEDs), photodetectors, organic photovoltaic (OPV) cells, sensors, memory elements and logic circuits.

Abstract: The present invention relates to organic copolymers and organic semiconducting compositions comprising these materials, including layers and devices comprising such organic semiconductor compositions. The invention is also concerned with methods of preparing such organic semiconductor compositions and layers and uses thereof. The invention has application in the field of printed electronics and is particularly useful as a semiconducting material for use in formulations for organic thin film transistor (OTFT) backplanes for displays, integrated circuits, organic light emitting diodes (OLEDs), photodetectors, organic photovoltaic (OPV) cells, sensors, memory elements and logic circuits.

Abstract: Disclosed is a facile and cost effective method of producing nano silicon powder or graphene-doped silicon nano powder having a particle size smaller than 100 nm. The method comprises: (a) preparing a silicon precursor/graphene nano composite; (b) mixing the silicon precursor/graphene nano composite with a desired quantity of magnesium; (c) converting the silicon precursor to form a mixture of graphene-doped silicon and a reaction by-product through a thermal and/or chemical reduction reaction; and (d) removing the reaction by-product from the mixture to obtain graphene-doped silicon nano powder.

Abstract: A positive electrode for a battery includes a positive active material, a conductive agent, and a copolymer. The copolymer includes a constituent unit (a) represented by the following general formula (1) and a constituent unit (b) represented by the following general formula (2): (wherein R1, R2, R3, R5, R6, R7 and R9 are the same or different and denote a hydrogen atom, a methyl group or an ethyl group, R4 denotes a hydrocarbon group having 8 to 30 carbon atoms, R8 denotes a linear or branched alkylene group having 2 to 4 carbon atoms, X1 and X2 denote an oxygen atom or NH, and p denotes a number of 1 to 50.

Abstract: A conjugated polymer for electronic devices can include a repeated unit having the structure of formula (I)

Abstract: Provided is a conductive sheet composition including a polycarbonate resin, a rubber-modified vinyl-based graft copolymer, carbon nanotube, and a silicone particle to improve conductivity and mechanical physical properties and reduce surface gloss.

Abstract: The present invention relates to a composition comprising polystyrene or modified-polystyrene or a mixture thereof, said polystyrene or modified-polystyrene or mixture thereof further comprising carbon nanotubes; wherein the composition comprises a polyolefin; and wherein the composition comprises at most 1.90% by weight of carbon nanotubes, based on the total weight of the composition. The present invention also relates to a method for the preparation of the composition, wherein the carbon nanotubes are provided in polyolefin or styrenic copolymer masterbatch.

Abstract: Provided are a method for manufacturing a highly pure silicon by unidirectional solidification of molten silicon, that can inexpensively and industrially easily manufacture highly pure silicon that has a low oxygen concentration and low carbon concentration and is suitable for applications such as manufacturing solar cells; highly pure silicon obtained by this method and silicon raw material for manufacturing highly pure silicon. A method for manufacturing highly pure silicon using molten silicon containing 100 to 1000 ppmw of carbon and 0.5 to 2000 ppmw of germanium as the raw material when manufacturing highly pure silicon by unidirectionally solidifying molten silicon raw material in a casting container, the highly pure silicon obtained by this method, and the silicon raw material for manufacturing the highly pure silicon.

Abstract: The present invention provides a capacitor oil that can maintain breakdown voltage at a high level in a wide temperature range of ?50° C. to 30° C., extremely unlikely precipitates as crystals in particular at ?50° C. and thus has excellent properties both at normal temperature and a lower temperature. The capacitor oil of the present invention comprises 1,1-diphenylethane and benzyltoluene, wherein the mass ratio of 1,1-diphenylethane to benzyltoluene is 0.8 to 2.0, the total amount of the ortho-isomer and para-isomer in the benzyltoluene is 90 percent by mass or less, and the composition has a 40° C. kinematic viscosity of 3.00 mm2/s or lower.

Abstract: The present invention inhibits the clouding of cured products obtained by polymerizing and curing a composition including sulfur and an episulfide compound, and inhibits clouding particularly in lenses, called plus-power lenses, that have large central thicknesses; and provides a composition for optical materials with which it is possible to predict and assess whether or not clouding will occur after curing and to determine quality at a stage before polymerization and curing. These objectives are achieved by, for example, a composition for optical materials that includes: sulfur, the turbidity value of which when made into a 30-mass % carbon disulfide solution is 10 ppm or less; and an episulfide compound. That is, clouding is prevented and excellent transparency is achieved in optical materials produced from said composition for optical materials that comprises an episulfide compound and sulfur that satisfies the aforementioned condition in terms of turbidity value.

Abstract: The present invention relates to a compound represented by Formula 1, wherein in Formula 1, each of R1 to R7 is the same as defined in the specification, a photosensitive resin composition comprising the same, and a color filter prepared using the same. The color filter can realize high contrast and high brightness.

Abstract: The present invention relates to a photosensitive resin composition for a black matrix, a color filter including the black matrix and a liquid crystal display device using the same. The aforementioned photosensitive resin composition includes a polysiloxane (A), a compound having a vinyl unsaturated group (B), a photo initiator (C), a solvent (D) and a black pigment (E). The compound having the vinyl unsaturated group (B) includes a compound having an acidic group and at least three vinyl unsaturated groups (B-1).

Abstract: An apparatus for pushing a fastener from a host material with, for example, an air hammer includes a punch shank, a compression spring, a hollow sleeve, a fastener and a punch. The hollow sleeve includes an opening fowled therein for interfitment over a central portion of the punch shank, and a set screw placed therein for engagement with a retention flat portion of a central portion of the punch shank The punch includes a top that operably engages with the air hammer, and a bottom end having a recess formed therein, where the recess is configured and arranged for retention of a top of the punch shank. The spring fits over the punch shank, and contacts the bottom end of the punch and the top end of the sleeve.

Abstract: A cable puller assembly is provided. The cable puller assembly includes a gripping assembly including a first engaging member and a second engaging member removably coupled to the first engaging member, the gripping assembly further including an assembly interior surface at least partially defining a cable channel configured to receive a cable. The cable puller assembly further includes a plurality of friction elements disposed on the assembly interior surface, a cable support member coupled to the gripping assembly, the cable support member configured to guide the cable through the cable channel, and a pulling member coupled to the gripping assembly.

Abstract: An electromechanical apparatus for evacuating buildings in the event of a fire includes a reel that has, rolled up on it, a mooring cable that longitudinally passes through the inside of a rigid tube, ending in an evacuation harness, where an individual will be secured. The weight of the individual makes it possible to rock the tube and a lever that has a braking disc and which acts on a brake disc that allows, by means of a mechanical transmission system, the braking and/or retention of the reel and consequently the descent of the individual. There is a radio-control unit and a standalone electric and electronic safety system that is activated when the speed of descent of the individual is too great. The apparatus allows evacuation and can be reused, once used. The apparatus carries away, brakes, retains and evacuates the individual making use of the electromechanical apparatus.

Abstract: A portable, hand-operated rescue tool is provided for rescue and extreme duty operations where an object needs to be cut, crushed, pierced and separated, or lifted. The rescue tool includes a body, a support handle and articulating jaw force members used to impart high forces on an object. The tool includes a manually-operated, pivoting actuation handle connected to a high pressure fluid displacement system to pivotally rotate the jaw force arms in a selected direction or mode of operation to suit the situation.

Abstract: A post-cable connection for releasably connecting a cable to a post, for example in a roadway cable barrier system. A post-cable connector is hung from the top end of a post whereby when the post is impacted and urged toward ground level the cable is released from the post.

Abstract: Provided are nonvolatile memory transistors and devices including the nonvolatile memory transistors. A nonvolatile memory transistor may include a channel element, a gate electrode corresponding to the channel element, a gate insulation layer between the channel element and the gate electrode, an ionic species moving layer between the gate insulation layer and the gate electrode, and a source and a drain separated from each other with respect to the channel element. A motion of an ionic species at the ionic species moving layer occurs according to a voltage applied to the gate electrode. A threshold voltage changes according to the motion of the ionic species. The nonvolatile memory transistor has a multi-level characteristic.

Abstract: A resistive switching device includes a first electrode and a transition metal oxide layer formed on the first electrode. An oxygen scavenging electrode is formed on the transition metal oxide wherein the oxygen scavenging electrode removes oxygen from the transition metal oxide layer to increase formation of oxygen vacancies in the transition metal oxide layer to enable a switching mode when a bias is applied between the first electrode and the oxygen scavenging electrode.

Abstract: Memory cell architectures and methods of forming the same are provided. An example memory cell can include a switch element and a memory element formed in series with the switch element. A smallest lateral dimension of the switch element is different than a smallest lateral dimension of the memory element.

Abstract: A resistive memory structure including at least one reactive layer, at least one electrode, and at least one resistance-changing material is provided. The reactive layer extends along a first direction and a second direction. The electrode extends at least along a third direction, wherein the first direction, the second direction, and the third direction are different from each other. At least part of the resistance-changing material is disposed between the reactive layer and the electrode. When ions diffuse from the resistance-changing material to the reactive layer or from the reactive layer to the resistance-changing material, resistance of the resistance-changing material changes.

Abstract: resistance switching device having a high resistance variation ratio, an excellent response characteristic, an excellent resistance memory characteristic (retention characteristics) and an excellent repeat resistance. The resistance switching device comprises an n-type oxide semiconductor and first and second electrodes which are disposed so as to interpose at least a part of the n-type oxide semiconductor therebetween wherein a Schottky junction which provides resistance variation/memory characteristics by the application of voltage having different polarities between the first and second electrodes is formed at an interface between the n-type oxide semiconductor and the first electrode; and the first electrode is positioned such that it is in contact with the n-type oxide semiconductor, and has a lower layer which is formed from Au oxide or a Pt oxide or Au or Pt containing oxygen having the thickness of 1-50 nm.

Abstract: Some embodiments include methods of forming memory cells. Heater structures are formed over an array of electrical nodes, and phase change material is formed across the heater structures. The phase change material is patterned into a plurality of confined structures, with the confined structures being in one-to-one correspondence with the heater structures and being spaced from one another by one or more insulative materials that entirely laterally surround each of the confined structures. Some embodiments include memory arrays having heater structures over an array of electrical nodes. Confined phase change material structures are over the heater structures and in one-to-one correspondence with the heater structures. The confined phase change material structures are spaced from one another by one or more insulative materials that entirely laterally surround each of the confined phase change material structures.

Abstract: Memory cells having a select device material located between a first electrode and a second electrode, a memory element located between the second electrode and a third electrode, and a number of conductive diffusion barrier materials located between a first portion of the memory element and a second portion of the memory element. Memory cells having a select device comprising a select device material located between a first electrode and a second electrode, a memory element located between the second electrode and a third electrode, and a number of conductive diffusion barrier materials located between a first portion of the select device and a second portion of the select device. Manufacturing methods are also described.

Abstract: A method for manufacturing a semiconductor nano layer structure includes: two substrates are provided; a plurality of semiconductor nanowires are formed on one of the substrates; an absorption surface is formed on the other substrate; one of the substrates is fixed on a cylindrical roller, the cylindrical roller is brought into contact with a surface of the substrate which is stationary and is not fixed on the cylindrical roller, and rolled with a constant velocity and pressure so that the semiconductor nanowires are break, detached, transferred and absorbed, and a semiconductor nano layer structure is formed on the stationary substrate; a de-laminating process is performed to separate the semiconductor nano layer structure from the second substrate; an electric Joule heat welding process is locally performed to bond each of the semiconductor nanowires of the semiconductor nano layer structure or each semiconductor nano layer structure.

Abstract: A bulk manufacturing method for growing silicon-germanium stained-layer superlattice (SLS) using an ultra-high vacuum-chemical vapor deposition (UHV-CVD) system and a detector using it is disclosed. The growth method overcomes the stress caused by silicon and germanium lattice mismatch, and leads to uniform, defect-free layer-by-layer growth. Flushing hydrogen between the layer growths creates abrupt junctions between superlattice structure (SLS) layers. Steps include flowing a mixture of phosphine and germane gases over a germanium seed layer. This in-situ doped germanium growth step produces an n-doped germanium layer. Some of the phosphorus diffuses into the underlying germanium and reduces the stress in the underlying germanium that is initially created by the lattice mismatch between germanium and silicon. Phosphine can be replaced by diborane if a p-doped layer is desired. The reduction of stress results in a smooth bulk germanium growth.

Abstract: A device for guiding and absorbing electromagnetic radiation, the device including: absorbing means for absorbing the electromagnetic radiation; and a coupled to the absorbing means for guiding the electromagnetic radiation to the absorbing means, wherein the waveguide and the absorbing means are formed from a structure including a first cladding layer, a second cladding layer over the first cladding layer, and a quantum-well layer between the first and second cladding layers, the quantum-well layer being formed of a material having a different composition to the first and second cladding layers, wherein the thickness and the composition of the quantum-well layer is optimised to provide an acceptable level of absorption of electromagnetic radiation in the waveguide while providing an appropriate band gap for absorption of the electromagnetic radiation in the absorbing means.

Abstract: The present disclosure provides systems, processes, articles of manufacture, and compositions that relate to core/shell semiconductor nanowires. Specifically, the disclosure provides a novel semiconductor material, CdSe/ZnS core/shell nanowires, as well as a method of preparation thereof. The disclosure also provides a new continuous flow method of preparing core/shell nanowires, including CdSe/CdS core/shell nanowire and CdSe/ZnS core/shell nanowires.

Abstract: A hybrid integrated circuit device includes a semiconductor-on-insulator substrate having a base substrate, a semiconductor layer and a dielectric layer disposed therebetween, the base substrate being reduced in thickness. First devices are formed in the semiconductor layer, the first devices being connected to first metallizations on a first side of the dielectric layer. Second devices are formed in the base substrate, the second devices being connected to second metallizations formed on a second side of the dielectric layer opposite the first side. A through via connection is configured to connect the first metallizations to the second metallizations through the dielectric layer. Pixel circuits and methods are also disclosed.

Abstract: A method of making an osmium(II) complex having Formula I, L1-Os-L2, wherein L1 and L2 are independently a biscarbene tridentate ligand, wherein L1 and L2 can be same or different is disclosed. The method includes (a) reacting a precursor of ligand L1 with an osmium precursor to form an intermediate product, wherein the osmium precursor having the formula OsHx(PR3)y, wherein x is an integer from 2 to 6 and y is an integer from 2 to 5, and R is selected from the group consisting of aryl, alkyl and cycloalkyl; and (b) reacting a precursor of ligand L2 with said intermediate product.

Abstract: A method of manufacturing an organic light-emitting display apparatus includes disposing a low melting glass (LMG) thin film to cover a display unit disposed on a substrate, and radiating an energy beam onto the LMG thin film. Accordingly, an encapsulation layer having excellent sealing characteristics may be rapidly formed, and thus manufacturing process efficiency and product reliability may be improved.

Abstract: An organic light-emitting display device includes a thin film transistor, a planarization layer on the thin film transistor and having an integral pixel sectioning portion defining a boundary of a pixel area, a pixel electrode connected to the thin film transistor in the pixel area inside the pixel sectioning portion, a light-emitting layer on the pixel electrode, and an opposite electrode on the light emitting layer.

Abstract: An organic light emitting display apparatus capable of reducing a dead space for arranging wirings in a panel. The organic light emitting display apparatus includes: a panel including a screen portion on which images are displayed and a non-screen portion surrounding the screen portion; a first wiring portion and a second wiring portion formed on different locations of the non-screen portion to be connected to pixel wirings on the screen portion; and a film substrate including a plurality of connection portions connected to the first wiring portion and the second wiring portion. Thus, the dead space that is formed on the non-screen portion of the panel for forming the wirings may be effectively reduced.

Abstract: Organic light-emitting displays and methods of manufacturing the same are disclosed. An organic light-emitting display includes a substrate; a display panel provided on the substrate, the display panel having an emission area in which an organic light-emitting device is provided and a non-emission area that separates the emission area; and a color-changing material layer provided on the display panel, wherein the color-changing material layer includes a light-transmission part corresponding to the emission area and a light-blocking part corresponding to the non-emission area.

Abstract: A method of manufacturing an organic light-emitting display apparatus includes preparing a deposition target in which an organic light-emitting portion is formed on a substrate, forming a pre-encapsulation layer for encapsulating the organic light-emitting portion by using a facing target sputtering apparatus, and forming an encapsulation layer by performing a plasma surface process on the pre-encapsulation layer by using the facing target sputtering apparatus. The facing target sputtering apparatus includes a chamber in which a mounting portion for accommodating the deposition target is provided, a gas supply portion facing the mounting portion and supplying gas to the chamber, a first target portion and a second target portion disposed in the chamber and facing each other, and an induced magnetic field coil surrounding the exterior of the chamber.

Abstract: An organic light-emitting display includes a display unit configured to generate an image and a wire grid polarizer on the display unit; the wire grid polarizer includes a base substrate and a plurality of wire grids formed on the base substrate, wherein the plurality of wire grids are spaced from one another and disposed in parallel, and a first spacing between each pair of the plurality of wire grids in a first region of the base substrate and a second spacing between each pair of the plurality of wire grids in a second region of the base substrate is different.

Abstract: A sputtering apparatus, an organic light-emitting display apparatus manufactured using the sputtering apparatus, and a method for manufacturing the organic light-emitting display apparatus are provided. The sputtering apparatus includes: a chamber including a mounting portion configured to hold a deposition target material; a gas supply unit that faces the mounting portion and supplies gas to the chamber; a first target portion and a second target portion that are disposed to face each other within the chamber; and a magnetic field induction coil that surrounds an outside of the chamber.

Abstract: An organic light-emitting display apparatus includes: a substrate; pixels defined on the substrate, where each pixel includes a first region including a light-emitting region and a second region including a transmission region; a third region defined on the substrate disposed between the pixels; first electrodes disposed in the pixels on the substrate, respectively, where each first electrode is disposed in the first region of a corresponding pixel; an organic emission layer disposed to cover the first electrodes; a first auxiliary layer disposed on the organic emission layer in the second region and which exposes the first region; a second electrode disposed on the organic emission layer in the first region; a second auxiliary layer disposed in the first and second regions and which exposes the third region; and a third electrode disposed in the third region and in contact with the second electrode.

Abstract: An organic light emitting diode display including: a pixel electrode; a hole auxiliary layer on the pixel electrode; a passivation layer on the hole auxiliary layer; an organic light emitting layer on the passivation layer; an electron auxiliary layer on the organic light emitting layer; and a common electrode on the electron auxiliary layer is disclosed. A method for manufacturing an organic light emitting diode display is also disclosed.

Abstract: A thin film transistor includes a gate electrode provided on a substrate, a semiconductor layer insulated from the gate electrode and including indium, tin, zinc and gallium oxide, and source/drain electrodes formed on the semiconductor layer.

Abstract: An organic light-emitting display apparatus includes: a substrate, and an organic light-emitting device disposed on the substrate. The organic light-emitting device includes a first electrode, a second electrode, and an intermediate layer including at least an organic emission layer. In addition, the organic light-emitting display apparatus further includes a thin film encapsulating layer disposed on the organic light-emitting device. The thin film encapsulating layer includes at least one inorganic film including a low temperature viscosity transition (LVT) inorganic material. The LVT inorganic material includes tin oxide and at least one of boron oxide (B2O3), bismuth oxide (Bi2O3), barium oxide (BaO), and ammonium dihydrogen phosphate (NH4H2PO4).

Abstract: A method for manufacturing an organic light-emitting display apparatus including: forming an organic light-emitting device on a substrate, the organic light-emitting device including a first electrode, a second electrode, and an intermediate layer including at least an organic emission layer; and forming a thin film encapsulating layer on the organic light-emitting device, wherein the thin film encapsulating layer includes at least one inorganic film including a low temperature viscosity transition (LVT) inorganic material and an oxide, and the oxide includes zirconium-tungsten oxide or lithium-aluminum-silicon oxide.

Abstract: An improved organic light-emitting display apparatus prevents damage of wiring due to a mask during the manufacturing process, and a manufacturing method thereof. An organic light-emitting display apparatus includes a display unit formed on a substrate, a pad unit formed at one outer side of the display unit on the substrate, a wiring unit formed as a multilayer structure on the substrate to couple the display unit to the pad unit, a thin film encapsulating layer covering the display unit, and a protrusion unit that does not overlap the uppermost layer of wiring of the multilayered wiring unit.

Abstract: The invention provides an electro-optical device that has luminescent elements of a long lifetime by preventing oxygen or moisture from entering to luminescent layers or electrodes even in case of an electrode-optical device provided with a number of luminescent layers and an electronic apparatus provided with the electro-optical device. The invention can include an electro-optical device having first electrodes on a base body, a plurality of element areas including element layers including at least one functional layers disposed above the first electrodes, a second electrode formed above the element layers, a surrounding sections disposed on the base body so as to cover outer sides of the element layers included the element areas in the nearest proximity of the periphery of the base body, and a gas-barrier layer covering over the second electrode. Outer sides of the surrounding sections can be covered with the second electrode, and the gas-barrier layer can be in contact with the base body.

Abstract: A method for preparing a light emitting device comprising: disposing an electron-injection layer comprising a metal oxide on a cathode, disposing a first layer adjacent the electron-injection layer, the first layer comprising a small molecule material with a bandgap of at least about 3 eV capable of blocking holes, forming an emissive layer comprising quantum dots capable of emitting blue light upon excitation at a surface of the first layer opposite the electron-injection layer; disposing a second layer comprising a material capable of transporting holes and blocking electrons with a bandgap of at least about 3 eV adjacent a surface of the emissive layer opposite the first layer, and disposing an anode over the second layer. A light-emitting device is also disclosed.

Abstract: An encapsulation structure for an organic light emitting display device, an organic light emitting display device, and a method of manufacturing an organic light emitting display device are provided. The encapsulation structure includes a first porous layer, a first planarization layer, and a first barrier layer. The first porous layer above a substrate may have a curved top surface. The first planarization layer on the first porous layer may have a flat top surface. The first barrier layer on the first planarization layer may include a low melting point glass.

Abstract: An organic light emitting display including a back plane including an active area on which an image is displayed, and a bezel area outside the active area; a pixel array on the active area and configured to display the image; an encapsulation plate encapsulating the pixel array; a transparent adhesive film free of a moisture absorption filler, formed on the active area and disposed between the encapsulation plate and the back plane; and a darn including a sealant with a moisture absorption filler formed in the bezel area and adjoining the adhesive layer so as to limit moisture from penetrating into the pixel array.