Abstract: A tool and method for switching an electromagnetic relay may be provided, whereby the tool comprises a switching member capable of moving between a first position and a second position along a path oriented to the relay; wherein movement of the switching member from the first position to the second position is capable of switching a switch state of the electromagnetic relay via a magnetic force exerted by the switching member.

Abstract: A circuit breaker which includes a shielding component. The shielding component includes an external portion which defines a space external to the circuit breaker housing. The external portion prevents insertion of the circuit breaker into a breaker box closer than the distances defining the space. This can have the advantage of preventing arcing from the breaker contacts to the breaker box. The external portion may also prevent insertion of the circuit breaker into a breaker box such that a vent in the circuit breaker housing is blocked. In some implementations, the shielding component contains an internal portion which extends into the circuit breaker housing and is disposed to impede debris generated by contact arcing, or other debris, from entering the mechanism of the circuit breaker.

Abstract: A protective switch assembly (100) includes switch position sensors (109) that sense switch blade (14) position and indicate whether one or more switches (104) are open. According to another aspect, the voltage and current of the switch circuits are monitored to determine switch position as well as overall circuit status.

Abstract: An integrated circuit includes an electrically resettable fuse device. The electrically resettable fuse device has a plurality of resettable fuse modules coupled in parallel. Each resettable fuse module including a fuse element characterized by a first and a second impedance states. The plurality of resettable fuse modules are configured such that when the fuse element is in the first impedance state, and a current flowing through each fuse element in a first direction exceeds a current limit, the fuse element enters into the second impedance state. When the fuse element is in the second impedance state and, in response to a global reset signal and a local reset signal, a current is applied to the fuse element in a second direction opposite the first direction, the fuse element is reset to the first impedance state.

Abstract: The invention relates to a device for surge-current-resistant terminal contacting of electrical components (3), in particular components of rotationally symmetrical form, wherein the components, on the lateral surface thereof, have spaced-apart contacting portions (7), also comprising two U-shaped, electrically conductive contact pads (1) which have a partial surface (4) which is complementary to the contour of the respective contacting portion of the electrical component. According to the invention, each contact pad is assigned a U-shaped spring clip which likewise has a partial surface (5) which is complementary to the contour of the respective contacting portion of the electrical component, wherein said partial surface is provided in the connecting portion between legs (6, 6?) of the U-shaped spring clip.

Abstract: A luminophore from the class of nitridic or oxynitridic luminophores with at least one cation M and an activator D, wherein a proportion x of the cation is replaced with Cu and D is at least one element from the series Eu, Ce, Sm, Yb and Tb

Abstract: A radiation generator may include a generator housing, a target electrode carried by the generator housing, a charged particle source carried by the generator housing to direct charged particles at the target electrode based upon an accelerating potential, and a suppressor electrode carried by the generator housing having an opening therein to permit passage of charged particles to the target electrode. A target extender electrode may be between the suppressor electrode and the target electrode and have an opening therein to permit passage of charged particles to the target. At least one voltage source may be coupled to the target electrode, the suppressor electrode, and the target extender electrode to cause the target electrode to have a voltage greater than a voltage of the suppressor electrode and to cause the target extender electrode to have a voltage greater than the voltage of the suppressor electrode.

Abstract: The invention relates to devices and methods in mass spectrometers for the generation of ions of heavy molecules, especially biomolecules, by bombarding them with uncharged clusters of molecules. The analyte ions which are generated or released by cluster bombardment of analyte substances on the surface of sample support plates show a broad distribution of their kinetic energies, which prevents good ion-optical focusing. In the invention, the kinetic energies are homogenized in a higher-density collision gas. The collision gas is preferably located in an RF ion guide, more preferably an RF ion funnel, which can transfer the ions to the mass analyzer. The collision gas may be introduced with temporal pulsing, coordinated or synchronized with the pulsed supersonic gas jet. The collision gas may be pumped off again before the next supersonic gas pulse. In an advantageous embodiment, the collision gas can originate from the supersonic gas jet itself.

Abstract: A bearing assembly is disclosed that includes a sleeve having an opening formed therein and a shaft positioned within the opening of the sleeve such that a gap is formed between an inner surface of the sleeve and an outer surface of the shaft. A lubricant is disposed in the gap and a plurality of grooves are formed on at least one of the outer surface of the shaft and the inner surface of the sleeve. An anti-wetting coating is disposed on the at least one of the outer surface of the shaft and the inner surface of the sleeve between adjacent grooves of the plurality of grooves.

Abstract: An anode for an X-ray tube includes at least one thermally conductive anode segment in contact with a rigid support member and cooling means arranged to cool the anode. The anode may further include a plurality of anode segments aligned end to end, each in contact with the support member.

Abstract: Embodiments include an X-ray generator including a radiation device installation housing and an X-ray generator. In various embodiments, the radiation device installation housing comprises a housing body, a flange fixedly provided on an inner wall of the housing body and shaped in circular and a compensation device fixedly or movably connected with the flange in a liquid tight manner; a liquid receiving cavity for receiving an insulating liquid formed between one side of two opposite sides of the compensation device and the inner wall of the housing body as well as the flange; a compensation device moving space formed between another side of the two opposite sides of the compensation device opposed to the inner wall of the housing body and an inner wall of the flange.

Abstract: An X-ray tube includes a radiopaque substrate including a window portion, an X-ray transmission window closing the window portion, an X-ray target provided at the window portion from an inner surface side of the substrate, a highly-evacuated container portion attached to the inner surface of the substrate, a cathode, a first control electrode and a second control electrode provided inside the container portion. A shielding electrode is provided at the inner surface of the substrate so as to surround the window portion. Electrons collide with the X-ray target to generate X-rays. Electrons reflected on the X-ray target between the shielding electrodes are absorbed by the shielding electrodes, so an inner surface of the container portion is not charged. The electron emission from the cathode is not affected by the reflected electrons, so a change in target current is small, and thus X-rays of substantially constant intensity can be radiated.

Abstract: A scalable, integrated photoemitter device and method of manufacture using conventional CMOS manufacturing techniques. The photoemitter device has a first semiconductor substrate having a plurality of photonic sources formed on top in a first material layer, the plurality of photonic sources and the material layer forming a planar surface. A second substrate is bonded to the planar surface, the second substrate having a plurality of photoemitter structures formed on top in a second material layer, each photoemitter structure in alignment with a respective photonic source of the first substrate and configured to generate particle beams responsive to light from a respective light source. Additionally provided is a multi-level photoemitter of tapered design for implementation in the scalable, integrated photoemitter device. Conventional CMOS manufacturing techniques are also implemented to build the multi-level photoemitter of tapered design.

Abstract: A device and method for emitting electrons by a field effect. The device (10) includes a vacuum chamber (12) including a tip (14) having an end (18) and forming a cold cathode, an extracting anode (16), components adapted for generating a potential difference between the tip (14) and the anode (16); an electromagnetic wave source (22) outside the chamber (12); a system (24) for forwarding the electromagnetic wave emitted by the electromagnetic wave source from the outside to the inside of the chamber as far as the vicinity of the tip (14); a system (26) for focusing the electromagnetic wave, laid out inside the chamber (12); and a system (28) for aligning the electromagnetic wave outside the chamber and adapted for allowing alignment of the electromagnetic wave focused by the focusing system on the end of the tip.

Abstract: A method for transmitting a broadband ion beam (100) and an ion implanter adopt an analyzing magnetic field (1), a calibration magnetic field (2) and an analyzing grating (6) to transmit a broadband ion beam. If the analyzing magnetic field (1) enables the broadband ion beam (100) emitted into the analyzing magnetic field from an incident face (101) thereof to be deflected anticlockwise in a horizontal direction, the calibration magnetic field (2) enables an ion beam diffusing again after passing through the analyzing grating (6) to be deflected clockwise in the horizontal direction; if the analyzing magnetic field (1) enables the broadband ion beam (100) emitted into the analyzing magnetic field from the incident face (101) thereof to be deflected clockwise in the horizontal direction, the calibration magnetic field (2) enables an ion beam diffusing again after passing through the analyzing grating (6) to be deflected anticlockwise in the horizontal direction.

Abstract: An ion implant apparatus and moveable ion beam current sensor are described. Various examples provide moving the ion beam current sensor during an ion implant process such that a distance between the ion beam current sensor and a substrate is maintained during scanning of the ion beam toward the substrate. The ion beam current sensor is disposed on a moveable support configured to move the ion beam current sensor in a first direction corresponding to the scanning of the ion beam while the substrate is moved in a second direction.

Abstract: A charged particle beam device (1) includes a charged particle optical lens barrel (10), a support housing (20) equipped with the charged particle optical lens barrel (10) thereon, and an insertion housing (30) inserted in the support housing (20). A first aperture member (15) is disposed in the vicinity of the center of the magnetic field of an objective lens, and a second aperture member (15) is disposed so as to externally close an opening part provided at the upper side of the insertion housing (30). Further, when a primary charged particle beam (12) is irradiated to a sample (60) arranged under the lower side of the second aperture member (31), secondary charged particles thus emitted are detected by a detector (16).

Abstract: A charged particle multi-beam inspection system comprises a beam generator directing a plurality of primary charged particle beams onto an object to produce an array of beam spots; an array of a first number of detection elements generating detection signals upon incidence of electrons; imaging optics imaging the array of beam spots onto the array of detection elements; wherein the beam generator includes a multi-aperture plate having an array of a second number of apertures greater than the first number; wherein the beam generator includes a selector having plural different states, wherein, in each of the plural different states, the apertures of a different group of apertures are each traversed by one primary charged particle beam, wherein a number of the apertures of the different group of apertures is equal to the first number.

Abstract: The invention relates to a projection lens assembly for directing a beam toward a target. This assembly includes a lens support body (52) that spans a plane (P), and has a connection region (58) and a lateral edge (56). The lens support body is arranged for insertion into a frame (42) of a processing unit along an insertion direction (X) parallel with the plane (P). The projection lens assembly includes conduits (60-64) emanating from the connection region, and a conduit guiding body (70-81) for accommodating the conduits. The guiding body includes a first guiding portion (72) for guiding the conduits from the connection region, along the plane to a lateral region (B) beyond the lateral edge. The guiding body also includes a second guiding portion (78) for guiding the conduits from the lateral region (B) toward a tilted edge (79) of the conduit guiding body.

Abstract: A method and apparatus for aligning a laser beam coincident with a charged particle beam. The invention described provides a method for aligning the laser beam through the center of an objective lens and ultimately targeting the eucentric point of a multi-beam system. The apparatus takes advantage of components of the laser beam alignment system being positioned within and outside of the vacuum chamber of the charged particle system.

Abstract: A system for monitoring a condition in an enclosed plasma processing space (102). The system comprises a sensor (338), arranged to be provided within the enclosed plasma processing space, for sensing a condition in the enclosed plasma processing space and a modulation circuit (342), connected to the sensor, and arranged to modulate an output of the sensor to provide a modulated signal. The system further comprises a first transmission line coupler (330) arranged to be disposed within the enclosed plasma processing space. The first transmission line coupler (546) is connected to the modulation circuit and is arranged to couple the modulated signal to a transmission line, which is arranged to deliver energy into the enclosed plasma space.

Abstract: The following description relates to a plasma processing apparatus and a method thereof. The plasma processing apparatus comprises a first plasma chamber having a first plasma discharge space, a first plasma source for supplying a first activation energy to the first plasma discharge space within the first plasma chamber, a second plasma chamber which is connected to the first plasma chamber and has a second discharge space, and a second plasma source for supplying a second activation energy for inducing inductive coupled plasma to the second plasma discharge space within the second plasma chamber.

Abstract: An open plasma lamp includes a cavity section. A gas input and gas output of the cavity section are arranged to flow gas through the cavity section. The plasma lamp also includes a gas supply assembly fluidically coupled to the gas input of the cavity section and configured to supply gas to an internal volume of the cavity section. The plasma lamp also includes a nozzle assembly fluidically coupled to the gas output of the cavity section. The nozzle assembly and cavity section are arranged such that a volume of the gas receives pumping illumination from a pump source, where a sustained plasma emits broadband radiation. The nozzle assembly is configured to establish a convective gas flow from within the cavity section to a region external to the cavity section such that a portion of the sustained plasma is removed from the cavity section by the gas flow.

Abstract: Verticality of a space formed in the multilayered film can be improved while suppressing an opening of a mask from being clogged. The multilayered film includes a first film and a second film that have different permittivities and are alternately stacked on top of each other. An etching method of etching the multilayered film includes preparing, within a processing vessel of a plasma processing apparatus, a processing target object having the multilayered film and a mask provided on the multilayered film; and etching the multilayered film by exciting a processing gas containing a hydrogen gas, a hydrofluorocarbon gas, a fluorine-containing gas, a hydrocarbon gas, a boron trichloride gas and a nitrogen gas within the processing vessel.

Abstract: A system and method of plasma processing includes a plasma chamber including a substrate support and an upper electrode opposite the substrate support, the upper electrode having a plurality of concentric temperature control zones and a controller coupled to the plasma chamber.

Abstract: This disclosure describes systems, methods, and apparatuses for extinguishing electrical arcs in a plasma processing chamber. Once an arc is detected, the steady state voltage provided to the plasma processing chamber can be reduced, and the current being provided to the chamber decays below a steady state value as the arc is extinguished. When the current falls to or below a current threshold, the voltage can be ramped back up bringing the voltage and current back to steady state values. This technique enables power to return to a steady state level faster than traditional arc mitigation techniques.

Abstract: A method of performing imaging mass spectrometry of a sample. The method comprises performing a first mass analysis of the sample using a first mass analyzer comprising a multi-pixel ion detector to obtain first mass spectral data representative of pixels of the sample. The method further comprises identifying clusters of pixels sharing one or more characteristics of first mass spectral data. The method also comprises performing a second mass analysis of the sample using a second mass analyzer to obtain second mass spectral data at at least one location in each cluster, wherein the number of locations is significantly less than the number of pixels in each cluster, said second mass analysis being of higher resolution than said first mass analysis. Also a mass spectrometry apparatus configured for carrying out the method.

Abstract: Certain embodiments described herein are directed to devices that can be used to align the components of a source assembly in a source housing. In some examples, a terminal lens configured to couple to the housing through respective alignment features can be used to retain the source components in a source housing to provide a source assembly.

Abstract: A mass spectrometer is disclosed comprising a time of flight mass analyser. The time of flight mass analyser comprises an ion guide comprising a plurality of electrodes which are interconnected by a series of resistors forming a potential divider. Ions are confined radially within the ion guide by the application of a two-phase RF voltage to the electrodes. A single phase additional RF voltage is applied across the potential divider so that an inhomogeneous pseudo-potential force is maintained along the length of the ion guide.

Abstract: Energy-saving lamps contain a gas filling of mercury vapour and argon in a gas discharge bulb. Amalgam balls are used for filling the gas discharge bulb with mercury. Novel coated balls whose operating life in the case of automatic metered introduction is increased by coating of the balls with an alloy powder and conglutination of the amalgam balls during storage and processing is prevented are proposed.

Abstract: A lamp includes a bulb, a filament, a gas, and a reflective film. The filament is disposed in the interior of the bulb along the tube axis. The gas is filled in the interior of the bulb. The reflective film is formed on the outer circumferential surface of the bulb and reflects a light from the filament toward the interior of the bulb. Further, the reflective film may be formed by depositing a reflective film material containing TiO2, SiO2, and BaSO4 on the outer circumferential surface of the bulb.

Abstract: In various embodiments, a lamp has a bulb with a pinch seal, which holds a light-emitting element by means of a wire clip. The wire clip consists of tungsten and has, at an end remote from films embedded in the pinch seal, an eyelet for holding the light-emitting element. An end of the wire clip which is close to a film is bent back. A film associated with the wire clip is folded in a roof-shaped manner. Overall, it is thus possible to realize a lamp with a long life.

Abstract: A pseudo-substrate (1, 11) for use in the production of semiconductor components, having a carrier substrate (2, 12) with a crystalline structure and a first buffer (3, 13), which is arranged on a surface of the carrier substrate (2, 12), if appropriate on further intervening intermediate layers, wherein the first buffer (3, 13) is embodied as a single layer or as a multilayer system and includes, at least at the surface facing away from the carrier substrate (2, 12), arsenic (As) and at least one of the elements aluminum (Al) and indium (In).

Abstract: The present invention is directed to a method and an apparatus for manufacturing a semiconductor device including step S22 to form an insulating film on a front surface of a semiconductor wafer that is a surface on which a semiconductor element is to be formed and on a back surface that is a surface opposing the front surface, step S26 to remove the insulating film formed on the back surface by selectively providing a first chemical on the back surface of the semiconductor wafer, and step S30 to remove the insulating film formed on the front surface by simultaneously immersing the plurality of semiconductor wafers in a second chemical.

Abstract: Provided is a method of forming a silicon nitride film on a surface to be processed of a target object, which includes: repeating a first process a first predetermined number of times, the process including supplying a silicon source gas containing silicon toward the surface to be processed and supplying a decomposition accelerating gas containing a material for accelerating decomposition of the silicon source gas toward the surface to be processed; performing a second process of supplying a nitriding gas containing nitrogen toward the surface to be processed a second predetermine number of times; and performing one cycle a third predetermined number of times, the one cycle being a sequence including the repetition of the first process and the performance of the second process to form the silicon nitride film on the surface to be processed.

Abstract: An oxide film capable of suppressing reflection of a lens is formed under a low temperature. A method of manufacturing a semiconductor device includes forming a metal-containing oxide film on a substrate by performing a cycle a predetermined number of times, the cycle comprising: (a) supplying a metal-containing source to the substrate; (b) supplying an oxidizing source to the substrate; and (c) supplying a catalyst to the substrate.

Abstract: This description relates to a method including forming an interlayer dielectric (ILD) layer and a dummy gate structure over a substrate and forming a cavity in a top portion of the ILD layer. The method further includes forming a protective layer to fill the cavity. The method further includes planarizing the protective layer. A top surface of the planarized protective layer is level with a top surface of the dummy gate structure. This description also relates to a semiconductor device including first and second gate structures and an ILD layer formed on a substrate. The semiconductor device further includes a protective layer formed on the ILD layer, the protective layer having a different etch selectivity than the ILD layer, where a top surface of the protective layer is level with the top surfaces of the first and second gate structures.

Abstract: A method of manufacturing a semiconductor device includes forming a thin film containing a predetermined element, oxygen, carbon, and nitrogen on a substrate by performing a cycle a predetermined number of times after supplying a nitriding gas to the substrate. The cycle includes performing the following steps in the following order: supplying a carbon-containing gas to the substrate; supplying a predetermined element-containing gas to the substrate; supplying the carbon-containing gas to the substrate; supplying an oxidizing gas to the substrate; and supplying the nitriding gas to the substrate.

Abstract: The disclosure relates to a method of making epitaxial structure. The method includes following steps: providing a free-standing carbon nanotube film, wherein the carbon nanotube film includes a number of carbon nanotubes aligned and connected with each other via van der Waals force; suspending the carbon nanotube film and inducing defects on the surface of the carbon nanotubes; growing a nano-material layer on the surface of the carbon nanotubes via atomic layer deposition; removing the carbon nanotube film by annealing to form a number of nanotubes; wherein the number of nanotubes are successively aligned and connected with each other to form a free-standing nanotube film; setting the nanotube film on an epitaxial growth surface of a substrate; and growing an epitaxial layer on the epitaxial growth surface.

Abstract: The present invention relates to a method for separating epitaxial layers and growth substrates, and to a semiconductor device using same. According to the present invention, a semiconductor device is provided which comprises a supporting substrate and a plurality of semiconductor layers provided on the supporting substrate, wherein the uppermost layer of the semiconductor layers has a surface of non-uniform roughness.

Abstract: Provided is a method of forming a seed layer as a seed of a thin film on an underlayer, which includes: forming a first seed layer on a surface of the underlayer by heating the underlayer, followed by supplying an aminosilane-based gas onto the surface of the heated underlayer; and forming a second seed layer on the surface of the underlayer with the first seed layer formed thereon by heating the underlayer, followed by supplying a disilane or higher order silane-based gas onto the surface of the heated underlayer.

Abstract: A semiconductor device with fin-shaped structure is disclosed. The semiconductor device includes: a substrate; a fin-shaped structure on the substrate; and an epitaxial layer on a top surface and part of the sidewall of the fin-shaped structure, in which the epitaxial layer and the fin-shaped structure includes a linear gradient of germanium concentration therebetween.

Abstract: Provided is a method for producing a Group III nitride-based compound semiconductor having an M-plane main surface. The method employs a sapphire substrate having a main surface which is inclined by 30° with respect to R-plane about a line of intersection Lsapph-AM formed by R-plane and A-plane perpendicular thereto. R-plane surfaces of the sapphire substrate are exposed, and a silicon dioxide mask is formed on the main surface of the substrate. AlN buffer layers are formed on the exposed R-plane surfaces. A GaN layer is formed on the AlN buffer layers. At an initial stage of GaN growth, the top surface of the sapphire substrate is entirely covered with the GaN layer through lateral growth.

Abstract: A semiconductor device in which an increase in oxygen vacancies in an oxide semiconductor layer can be suppressed is provided. A semiconductor device with favorable electrical characteristics is provided. A highly reliable semiconductor device is provided. A semiconductor device includes an oxide semiconductor layer in a channel formation region, and by the use of an oxide insulating film below and in contact with the oxide semiconductor layer and a gate insulating film over and in contact with the oxide semiconductor layer, oxygen of the oxide insulating film or the gate insulating film is supplied to the oxide semiconductor layer. Further, a conductive nitride is used for metal films of a source electrode layer, a drain electrode layer, and a gate electrode layer, whereby diffusion of oxygen to the metal films is suppressed.

Abstract: A semiconductor device comprising a suspended semiconductor nanowire inner gate and outer gate. A first epitaxial dielectric layer surrounds a nanowire inner gate. The first epitaxial dielectric layer is surrounded by an epitaxial semiconductor channel. The epitaxial semiconductor channel surrounds a second dielectric layer. A gate conductor surrounds the second dielectric layer. The gate conductor is patterned into a gate line and defines a channel region overlapping the gate line. The semiconductor device contains source and drain regions adjacent to the gate line.

Abstract: In a method according to the present invention, an occurrence ratio of popcorn is suppressed by adjusting kinetic energy of a source gas supplied to a reaction furnace for producing polycrystalline silicon with a Siemens method (flow velocity and a supply amount of the source gas in source gas supply nozzle ejection ports). Specifically, in performing deposition reaction of the polycrystalline silicon under a reaction pressure of 0.25 MPa to 0.9 MPa, when flow velocity of the source gas in gas supply ports of the source gas supply nozzles (9) is represented as u (m/sec), a source gas supply amount is represented as Q (kg/sec), and an inner volume of the reaction furnace (100) is represented as V (m3), values of u and Q of each of the source gas supply nozzles (9) are set such that a total ?(Q×u2/V) of values Q×u2/V is equal to or larger than 2500 (kg/m·sec3).

Abstract: The invention relates to nanowires which consist of or comprise semiconductor materials and are used for applications in photovoltaics and electronics and to a method for the production thereof. The nanowires are characterized in that they are obtained by a novel method using novel precursors. The precursors represent compounds, or mixtures of compounds, each having at least one direct Si—Si and/or Ge—Si and/or Ge—Ge bond, the substituents of which consist of halogen and/or hydrogen, and in the composition of which the atomic ratio of substituent:metalloid atoms is at least 1:1.

Abstract: Disclosed are methods for selective deposition of doped Group IV-Sn materials. In some embodiments, the method includes providing a patterned substrate comprising at least a first region and a second region, where the first region includes an exposed first semiconductor material and the second region includes an exposed insulator material, and performing at least two cycles of a grow-etch cyclic process. Each cycle includes depositing a doped Group IV-Tin (Sn) layer, where depositing the doped Group IV-Sn layer includes providing a Group IV precursor, a Sn precursor, and a dopant precursor, and using an etch gas to etch back the deposited doped Group IV-Sn layer.

Abstract: A method of removing at least one oxide from a surface of a body of semiconductor material is disclosed. The method includes arranging the body in a vacuum chamber and maintaining a temperature of the body in the vacuum chamber within a predetermined range, or substantially at a predetermined value, while exposing said surface to a flux of indium atoms. Corresponding methods of processing an oxidized surface of a body of semiconductor material to prepare the surface for epitaxial growth of at least one epitaxial layer or film over said surface, and methods of manufacturing a semiconductor device are also disclosed.

Abstract: A method is disclosed for crystallizing semiconductor material so that it has large grains of uniform size comprising delivering a first energy exposure of high intensity and short duration, and then delivering at least one second energy exposures of low intensity and long duration. The first energy exposure heats the substrate to a high temperature for a duration less than about 0.1 sec. The second energy exposure heats the substrate to a lower temperature for a duration greater than about 0.1 sec.