Abstract: Provided is a semiconductor device comprising a cooler in which, by improving the shape of the connecting portions of an inlet/outlet of a coolant or the like, the pressure loss in the connecting portion or the like can be reduced. A cooler 20 of a semiconductor device 1 includes: an inlet 27 and an outlet 28 provided on side walls 22b1, 22b2 of a case 22 opposing to each other at diagonal positions; an introduction path 24 which is connected to the inlet 27 and formed in the case 22; a discharge path 25 which is connected to the outlet 28 and formed in the case 22; and a cooling flow channel 26 between the introduction path 24 and the discharge path 25. The height of the opening of the inlet 27 is larger than the height of the introduction path 24, and a connecting portion 271 between the inlet 27 and the introduction path 24 includes an inclined surface 271b which is inclined from the bottom surface of the connecting portion 271 toward the longitudinal direction of the introduction path 24.

Abstract: A semiconductor device includes a substrate on which a plurality of contact regions are defined, a plurality of transistors formed in the plurality of contact regions, a support body formed over the plurality of transistors and including a top surface, portions of which have different heights in the plurality of contact regions, a plurality of stacked structures including a plurality of conductive layers stacked over the support body, slits located between the plurality of stacked structures, first lines coupled to first junctions of the plurality of transistors through the slits, and second lines coupled to second junctions of the plurality of transistors through the slits.

Abstract: Various embodiments provide a chip arrangement. The chip arrangement may include a first chip having a first chip side and a second chip side opposite the first chip side and at least one contact on its second chip side; a second chip having a first chip side and a second chip side opposite the first chip side and at least one contact on its first chip side; wherein the second chip side of the first chip and the second chip side of the second chip are facing each other; a first electrically conductive structure extending from the at least one contact of the first chip from the second chip side of the first chip through the first chip to the first chip side of the first chip; and a second electrically conductive structure.

Abstract: A semiconductor device comprising a second surface of a logic die and a second surface of a via bar coupled to a first surface of a substrate, a second surface of a memory die coupled to a first surface of the via bar, a portion of the second surface of the memory die extending over the first surface of the logic die, such that the logic die and the memory die are vertically staggered, and the memory die electrically coupled to the logic die through the via bar. The via bar can be formed from glass, and include through-glass vias (TGVs) and embedded passives such as resistors, capacitors, and inductors. The semiconductor device can be formed as a single package or a package-on-package structure with the via bar and the memory die encapsulated in a package and the substrate and logic die in another package.

Abstract: A semiconductor device includes a through electrode vertically passing through the semiconductor device; a metal pad electrically coupling the through electrode and an exterior; a data input block suitable for transferring a data signal to the metal pad in response to a write command; a through electrode storage block suitable for storing the data signal transferred through the metal pad; and a data output block suitable for outputting the data signal, which is stored in the through electrode storage block, to the exterior in response to a read command.

Abstract: A semiconductor device bonded by an anisotropic conductive film, the anisotropic conductive film including a phenoxy resin including a fluorene-substituted phenoxy resin; and a radically polymerizable resin including a fluorene-substituted acrylate.

Abstract: A high density film adapted for nanochip package comprises three redistribution layers. A bottom redistribution circuit has a plurality of first bottom pads adapted for a nanochip to mount; and has a plurality of first top pads. The density of the first bottom pads is higher than the density of the first top pads. A middle redistribution circuit has a plurality of second bottom pads electrically coupled to the first top pads; and has a plurality of second top pads. The density of the second bottom pads is higher than the density of the second top pads. A top redistribution circuit has a plurality of third bottom pads electrically coupled to the second top pads; and has a plurality of third top pads. The density of the third bottom pads is higher than the density of the third top pads.

Abstract: A semiconductor device includes, a lead frame having a die pad and a plurality of leads each disposed around the die pad, a semiconductor element rested on the die pad of the lead frame, and bonding wires for electrically interconnecting the lead of the lead frame and the semiconductor element. The lead frame, the semiconductor element, and the bonding wires are sealed with a sealing resin section. The sealing resin section includes a central region provided over and around the semiconductor device, and a marginal region provided in the periphery of the central region. Thickness of the central region is greater than that of the marginal region.

Abstract: A packaged semiconductor device may include a termination surface having terminations configured as leadless interconnects to be surface mounted to a printed circuit board. A first flange has a first surface and a second surface. The first surface provides a first one of the terminations, and the second surface is opposite to the first surface. A second flange also has a first surface and a second surface, with the first surface providing a second one of the terminations, and the second surface is opposite to the first surface. A die is mounted to the second surface of the first flange with a material having a melting point in excess of 240° C. An electrical interconnect extends between the die and the second surface of the second flange opposite the termination surface, such that the electrical interconnect, first flange and second flange are substantially housed within a body.

Abstract: A chip interposer may include: a first interconnect level including a first pad; and a second interconnect level including a second pad, wherein the second pad may face in the same direction as the first pad.

Abstract: A device includes a bottom package component that includes a bottom die, and a dam over a top surface of the bottom die. The dam has a plurality of sides forming a partial ring, with an air gap surrounded by the plurality of side portions. The air gap overlaps the bottom die. A top package component is bonded to the bottom package component, wherein the air gap separates a bottom surface of the top package component from the bottom die.

Abstract: Ball grid assembly (BGA) bumping solder is formed on the back side of a laminate panel within a patterned temporary resist. Processes such as singulation and flip chip module assembly are conducted following BGA bumping with the temporary resist in place. The resist is removed from the back side of the singulated laminate panel prior to card assembly. Stand-off elements having relatively high melting points can be incorporated on the BGA side of the laminate panel to ensure a minimum assembly solder collapse height. Alignment assemblies are formed on the socket-facing side of an LGA module using elements having relatively high melting points and injected solder.

Abstract: An integrated circuit package includes a die having a first substrate implementing an integrated circuit comprising circuit elements. The die includes a first plurality of metal layers implementing a first portion of a metal interconnect structure for the integrated circuit. The die also includes a first plurality of pads at or overlying a top metal layer of the first plurality of metal layers. The integrated circuit package includes an interposer having a second plurality of metal layers implementing a second portion of the metal interconnect structure. The interposer includes a second plurality of pads at or overlying a top metal layer of the second plurality of metal layers. A plurality of solder structures couple the first and second pluralities of pads. The first and second portions of the metal interconnect structure together complete a signal path between two or more circuit blocks of the integrated circuit.

Abstract: A semiconductor interposer is provided, which includes: a substrate body having a surface defined with an inner area and a peripheral area around the inner area; a plurality of conductive posts embedded in the substrate body and each having one end exposed from the surface of the substrate body; a passivation layer formed on the surface of the substrate body and having a peripheral portion formed in the peripheral area, a plurality of ring-shaped portions formed around peripheries of the exposed ends of the conductive posts in the inner area and a plurality of strip-shaped portions formed between the ring-shaped portions for connecting the ring-shaped portions; and a UBM layer formed on the exposed end of each of the conductive posts and extending on the ring-shaped portion around the periphery of the exposed end of the conductive post, thereby effectively reducing stresses to prevent warping of the semiconductor interposer.

Abstract: A semiconductor module according to one embodiment includes a semiconductor chip, a wiring substrate, a mounting plate provided with the wiring substrate thereon, a frame body defining a case for the wiring substrate, together with the mounting plate, a bus bar extending from the case and being inserted into a side wall of the frame. The side wall has a projection. The bus bar includes a first region in the side wall, a second region extending from a first end of the first region outward from the frame, a third region extending from a second end of the first region into the frame. The third region is bent based on the shape being close to the wiring substrate of the projection. The mounting plate with the wiring substrate is attached to the frame such that the third region is in press-contact with the wiring pattern.

Abstract: A structure includes a substrate, and an interconnect structure over the substrate. The structure further includes a through-substrate-via (TSV) extending through the interconnect structure and into the substrate, the TSV comprising a conductive material layer. The structure further includes a dielectric layer having a first portion over the interconnect structure and a second portion within the TSV, wherein the first portion and the second portion comprise a same material. The conductive material layer includes a first section separated from substrate by the second portion of the dielectric layer. The conductive material layer further includes a second section over a top surface of the second portion of the dielectric layer. The conductive material layer further includes a third section over the second section, wherein the third section has a width greater than a width of the second section.

Abstract: An anti-fuse array includes: a plurality of first transistors having a matrix structure over a semiconductor substrate; a plurality of second transistors respectively disposed adjacent to first ends of the plurality of first transistors along a first direction of the matrix structure; and a plurality of third transistors respectively disposed at second ends of the plurality of first transistors along a second direction.

Abstract: Programmable devices, methods of manufacture thereof, and methods of programming devices are disclosed. In one embodiment, a programmable device includes a link and at least one first contact coupled to a first end of the link. The at least one first contact is adjacent a portion of a top surface of the link and at least one sidewall of the link. The programmable device includes at least one second contact coupled to a second end of the link. The at least one second contact is adjacent a portion of the top surface of the link and at least one sidewall of the link.

Abstract: Semiconductor fuses with epitaxial fuse link regions and fabrication methods thereof are presented. The methods include: fabricating a semiconductor fuse including an anode region and a cathode region electrically linked by a fuse link region, and the fabricating including: forming, epitaxially, the fuse link region between the anode region and the cathode region, wherein the fuse link region facilitates the semiconductor fuse open circuiting from applying a programming current between the anode region and the cathode region thereof. The semiconductor fuses include: an anode region and a cathode region electrically linked by a fuse link region, wherein the fuse link region includes an epitaxial structure and facilitates the semiconductor fuse open circuiting from applying a programming current between the anode region and the cathode region, wherein the epitaxial structure is in at least partial crystallographic alignment with the anode region and the cathode region of the semiconductor fuse.

Abstract: In one embodiment, the invention provides a back-end-of-line (BEOL) line fuse structure. The BEOL line fuse structure includes: a line including a plurality of grains of conductive crystalline material; wherein the plurality of grains in a region between the first end and a second end include an average grain size that is smaller than a nominal grain size of the plurality of grains in a remaining portion of the line.

Abstract: The embodiments of the present disclosure provide a GOA circuit of an array substrate and a display apparatus, which are used in the field of display technology, and enable reducing short-cut of a GOA unit due to ESD, and improving the yield of the GOA circuit. The GOA circuit includes a GOA unit and an STV signal wire electrically connected to the GOA unit, the STV signal wire including a first part and a second part; the GOA circuit further includes a first transparent electrode and an insulating layer located between the first transparent electrode and the first part, the first transparent electrode, the first part and the insulating layer forming a first capacitor.

Abstract: A method is provided that includes first etching a substrate according to a first mask. The first etching forms a first etch feature in the substrate to a first depth. The first etching also forms a sliver opening in the substrate. The sliver opening may then be filled with a fill material. A second mask may be formed by removing a portion of the first mask. The substrate exposed by the second mask may be etched with a second etch, in which the second etching is selective to the fill material. The second etching extends the first etch feature to a second depth that is greater than the first depth, and the second etch forms a second etch feature. The first etch feature and the second etch feature may then be filled with a conductive metal.

Abstract: A method of forming a semiconductor structure including a barrier layer between a metal line and an air gap oxide layer. The barrier layer may be formed in-situ or by a thermal annealing process and may prevent diffusion or electrical conduction.

Abstract: In accordance with an embodiment a semiconductor component includes an electrically conductive structure formed over a portion of a semiconductor material. An electrical interconnect having a top surface and opposing edges contacts the electrically conductive structure. A protective structure is formed on the top surface and the opposing edges of the electrical interconnect and over a portion of the electrically conductive structure, wherein the protective structure forms a seal that protects the electrical interconnect.

Abstract: A dual damascene article of manufacture comprises a trench containing a conductive metal column where the trench and the conductive metal column extend down into and are contiguous with a via. The trench and the conductive metal column and the via have a common axis. These articles comprise interconnect structures incorporating air-gap spacers containing metal/insulator structures for Very Large Scale Integrated (VLSI) and Ultra Large Scale Integrated (ULSI) devices and packaging. The trench in this regard comprises a sidewall air-gap immediately adjacent the side walls of the trench and the conductive metal column, the sidewall air-gap extending down to the via to a depth below a line fixed by the bottom of the trench, and continues downward in the via for a distance of from about 1 Angstrom below the line to the full depth of the via. In another aspect, the article of manufacture comprises a capped dual damascene structure.

Abstract: A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a metal gate thereon and an interlayer dielectric (ILD) layer around the metal gate; removing part of the metal gate to form a recess; and depositing a mask layer in the recess and on the ILD layer while forming a void in the recess.

Abstract: One embodiment of an integrated circuit includes a plurality of semiconductor devices and a plurality of conductive lines connecting the plurality of semiconductor devices, wherein at least some of the plurality of conductive lines have pitches of less than one hundred nanometers and sidewall tapers of between approximately eighty and ninety degrees. Another embodiment of an integrated circuit includes a plurality of semiconductor devices and a plurality of conductive lines connecting the plurality of semiconductor devices, wherein at least some of the plurality of conductive lines are fabricated by providing a layer of conductive metal in a multi-layer structure fabricated upon a wafer and sputter etching the layer of conductive metal using a methanol plasma, wherein a portion of the layer of conductive metal that remains after the sputter etching forms the one or more conductive lines.

Abstract: An apparatus relating generally to a substrate is disclosed. In such an apparatus, a first bond via array has first wires extending from a surface of the substrate. A second bond via array has second wires extending from the surface of the substrate. The first bond via array is disposed at least partially within the second bond via array. The first wires of the first bond via array are of a first height. The second wires of the second bond via array are of a second height greater than the first height for coupling of at least one die to the first bond via array at least partially disposed within the second bond via array.

Abstract: A sensor device, having a flexible printed circuit board that has a fastening section for a chip structure, a chip structure situated on the fastening section of the flexible printed-circuit board, and a damper element for damping the chip structure from mechanical influences. The fastening section of the flexible printed circuit board, the chip structure and the damper element are situated one on top of the other.

Abstract: A semiconductor device is provided which includes a semiconductor substrate having a first region and a second region, the first and second regions being isolated from each other, a plurality of transistors formed in the first region, an alignment mark formed in the second region, the alignment mark having a plurality of active regions in a first direction, and a dummy gate structure formed over the alignment mark, the dummy gate structure having a plurality of lines in a second direction different from the first direction.

Abstract: A method for providing alignment in a die picking process may include aligning a semiconductor wafer based on a reference die, forming an indicator line relative to the reference die by picking a number of dice along a line extending across the wafer, and using the reference line to monitor a position of the picking machine relative to the wafer. A die attach machine may include a control system for automatically implementing such method.

Abstract: Described is a semiconductor package frame including a material comprising wire openings a die-mounting surface area with a die-mounting surface and identification markings included within the die-mounting surface. The identification markings uniquely identify the semiconductor package frame from among other semiconductor package frames comprising different identification markings.

Abstract: A semiconductor device includes a semiconductor substrate on which a semiconductor device is formed; first and second pads; a first insulating film which is formed above the semiconductor substrate; a plurality of wiring lines which are embedded in ditches provided in the first insulating film; a second insulating film provided to cover the first insulating film and the plurality of wiring lines; a semiconductor layer formed on the second insulating film; a source electrode connected with the semiconductor layer; and a drain electrode connected with the semiconductor layer. The plurality of wiring lines includes a gate electrode provided in a position which is opposite to the semiconductor layer. The semiconductor layer, the source electrode, the drain electrode and the gate electrode configure an ESD protection device to discharge a current by ESD surge from the first pad to the second pad.

Abstract: An X-ray obscuration (XRO) film comprising one or more metallic wire mesh layers and an adjacent layer of indium foil having portions which extend into openings of the wire mesh and in contact with metallic portions thereof. The XRO film can be capable of absorbing at least a portion of X-ray energy thereby creating an interference pattern when the XRO film is coupled with an electronic circuit and placed between an X-ray source and an X-ray detector and subjected to radiographic inspection. The interference pattern can create sufficient visual static to effectively obscure circuit lines in the electronic circuit when subjected to radiographic inspection techniques. The XRO film can be substantially thinner than existing solutions for preventing X-ray inspection with an exemplary embodiment being no more than 5 mils thick. The metallic XRO film can also provide electromagnetic shielding and/or heat dissipation for electronic circuits.

Abstract: The disclosed technology relates to a semiconductor device comprising a diode junction between two semiconductor regions of different doping types. In one aspect, the diode comprises a junction formed between an upper portion of an active area and a remainder of the active area, where the active area is defined in a substrate between two field dielectric regions. The upper portion is a portion of the active area that has a width smaller than a width of the active area itself. In another aspect, the semiconductor device is an electrostatic discharge protection device (ESD) comprising such a diode. In addition, the active area has a doping profile that exhibits a maximum value at the surface of the active area, and changes to a minimum value at a first depth, where the first depth can be greater in value than half of a depth of the upper portion.

Abstract: Device structures, design structures, and fabrication methods for a metal-oxide-semiconductor field-effect transistor. A gate structure is formed on a top surface of a substrate. First and second trenches are formed in the substrate adjacent to a sidewall of the gate structure. The second trench is formed laterally between the first trench and the first sidewall. First and second epitaxial layers are respectively formed in the first and second trenches. A contact is formed to the first epitaxial layer, which serves as a drain. The second epitaxial layer in the second trench is not contacted so that the second epitaxial layer serves as a ballasting resistor.

Abstract: A semiconductor device includes a semiconductor substrate, a first wiring layer including a plurality of first dummy metals provided inside an inductor wiring, a plurality of second dummy metals provided outside the inductor wiring, and a plurality of third dummy metals provided to overlap the inductor wiring in a plan view, and a second wiring layer provided between the semiconductor substrate and the first wiring layer. The second wiring layer includes the inductor wiring formed in the second wiring layer, a first region surrounding the inductor wiring which includes a plurality of fourth dummy metals, and a second region surrounding the first region which includes a plurality of fifth dummy metals. A density of the fourth dummy metals is lower than a density of the fifth dummy metals.

Abstract: A lot of buildings have been built while it is concerned that a building material is used fraudulently. Therefore, the present invention provides a managing method of the material and a system thereof. The present invention provides a managing method including a step of attaching a sheet including a plurality of memories to each surface of a plurality of materials, a step of dividing the plurality of materials with the sheet in accordance with data in the memory, a step of constructing a building by using the divided material in accordance with the data in the memory, and a step of checking the data on the constructed building, which is stored in the plurality of memories.

Abstract: A semiconductor device having a semiconductor substrate is provided. The semiconductor substrate includes an integrated circuit, which includes multi-layer structured metallization and inter-metal dielectric. The integrated circuit is below a passivation, which is over a metal structure. The metal structure includes a metal pad and an under bumper metallurgy, which is over and aligned with the metal pad. The metal pad is electrically connected to the integrated circuit, and the under bumper metallurgy is configured to electrically connect to a conductive component of another semiconductor device. The integrated circuit further includes a conductive trace, which is below and aligned with the metal structure. The conductive trace is connected to a power source such that an electromagnetic field is generated at the conductive trace when an electric current from the power source passes through the conductive trace.

Abstract: A semiconductor device according to the present invention includes a semiconductor chip having a front surface and a rear surface, a sealing resin layer stacked on the front surface of the semiconductor chip, a post passing through the sealing resin layer in the thickness direction and having a side surface flush with a side surface of the sealing resin layer and a forward end surface flush with a front surface of the sealing resin layer, and an external connecting terminal provided on the forward end surface of the post.

Abstract: A method includes forming a plurality of metal posts. The plurality of metal posts is interconnected to form a metal-post row by weak portions between neighboring ones of the plurality of metal posts. The weak portions include a same metal as the plurality of metal posts. A majority of each of the plurality of metal posts is separated from respective neighboring ones of the plurality of metal posts. An end portion of each of the plurality of metal posts is plated with a metal. The plurality of metal posts is disposed into a metal post-storage. The method further includes retrieving one of the metal posts from a metal-post storage, and bonding the one of the metal posts on a metal pad.

Abstract: The disclosed technology relates to pillar-type microbumps formed on a semiconductor component, such as an integrated circuit chip or an interposer substrate, and a method of forming the pillar-type microbumps. In one aspect, a method of forming the pillar-type microbump on a semiconductor component includes providing the semiconductor component, where the semiconductor component has an upper metallization layer, and the metallization layer has a contact area. The method additionally includes forming a passivation layer over the metallization layer. The method additionally includes forming a plurality of openings through the passivation layer such that the contact area is exposed at a bottom of the openings. The method further includes forming the microbump over the contact area, where the microbump forms an electrical connection with the contact area through the openings.

Abstract: An integrated circuit with probeable and routable interfaces is disclosed. The integrated circuit includes multiple micro-pillars that are attached to the surface of the integrated circuit, and multiple macro-pillars also attached to the surface of the integrated circuit. The micro-pillars provide an electrical interface to the integrated circuit during regular operation. The macro-pillars provide an electrical interface to the integrated circuit both during regular operation and during testing of the integrated circuit.

Abstract: A chip detecting system is disclosed. The system includes a ball grid array (BGA) chip and a circuit board, the BGA chip includes at least two functional pins being located at a corner of the BGA chip, the at least two functional pins are electrically connected to each other, the circuit board is provided with at least two solder pads and at least two testing pads, the at least two functional pins are electrically connected to the at least two solder pads by using solder balls separately, the solder pads are electrically connected to the testing pads separately, and the at least two testing pads are configured to electrically connect to a detector, so as to detect whether a crack exists between the at least two functional pins and the circuit board.

Abstract: The present invention provides a submount which includes a semiconductor element and which can be easily connected to an IC on a main substrate. The submount in one embodiment of the present invention includes: a substrate; electrodes; the semiconductor element; Au wires; and gold bumps. The electrodes, the semiconductor element, the Au wires, and the gold bumps, are encapsulated on the substrate by a resin. The gold bumps are formed on the electrodes and the Au wires by ball bonding and are cut by dicing such that side surfaces of the gold bumps are exposed. The exposed surfaces function as side surface electrodes of the submount.

Abstract: An embodiment is a method including forming a first package and a second package. The first package includes packaging a first die, forming a plurality of solder balls on the first die, and coating the plurality of solder balls with an epoxy flux. The second package includes forming a first electrical connector, attaching a second die adjacent the first electrical connector, forming a interconnect structure over the first die and the first electrical connector, the interconnect structure being a frontside of the second package, forming a second electrical connector over the interconnect structure, and the second electrical connector being coupled to both the first die and the first electrical connector. The method further includes bonding the first package to the backside of the second package with the plurality of solder balls forming a plurality of solder joints, each of the plurality of solder joints being surrounded by the epoxy flux.

Abstract: A method for making a microelectronic unit includes forming a plurality of wire bonds on a first surface in the form of a conductive bonding surface of a structure comprising a patternable metallic element. The wire bonds are formed having bases joined to the first surface and end surfaces remote from the first surface. The wire bonds have edge surfaces extending between the bases and the end surfaces. The method also includes forming a dielectric encapsulation layer over a portion of the first surface of the conductive layer and over portions of the wire bonds such that unencapsulated portions of the wire bonds are defined by end surfaces or portions of the edge surfaces that are uncovered by the encapsulation layer. The metallic element is patterned to form first conductive elements beneath the wire bonds and insulated from one another by portions of the encapsulation layer.

Abstract: Flip chip packaging methods, and flux head manufacturing methods used in the flip chip packaging methods may be provided. In particular, a flip chip packaging method including printing flux on a pad of a printed circuit board (PCB), mounting the die in a flip chip manner on the PCB such that a bump of the die faces the pad of the PCB, and bonding the bump of the die to the pad of the PCB using the flux may be provided.

Abstract: Decoupling metal-insulator-metal (MIM) capacitor designs for interposers and methods of manufacture thereof are disclosed. In one embodiment, a method of forming a decoupling capacitor includes providing a packaging device, and forming a decoupling MIM capacitor in at least two metallization layers of the packaging device.

Abstract: Materials, and methods that use such materials, that are useful for forming chip stacks, chip and wafer bonding and wafer thinning are disclosed. Such methods and materials provide strong bonds while also being readily removed with little or no residues.