Abstract: A surface-coated boron nitride sintered body tool includes a cubic boron nitride sintered body and a coating film formed thereon. The coating film includes an A layer and a C layer. The A layer is formed of Ti1-xaMaxaC1-yaNya (where Ma is one or more of Cr, Nb and W; 0?xa?0.7; 0?ya?1). The C layer is formed of Al1-(xc+yc)CrxcMcycN (where Mc is one or more of Ti, V and Si; 0.2?xc?0.8; 0?yc?0.6; 0.2?xc+yc?0.8). The A layer is formed on an outermost surface of the coating film or between the outermost surface of the coating film and the C layer. A distance between the outermost surface of the coating film and an upper surface of the C layer is 0.1 ?m or more and 1.0 ?m or less.

Abstract: An intermediate layer forming method to form an intermediate layer formed between a base material and a DLC film using a PVD method includes: a Ti layer film-forming step of film-forming a Ti layer on a base material; and a TiC layer film-forming step of film-forming a TiC layer on the Ti layer, in which in the Ti layer film-forming step, an Ar gas is supplied into a chamber into which the base material is carried and a film-forming pressure is set to a pressure in a range of not less than 0.4 Pa and not more than 1 Pa to film-form the Ti layer, and in the TiC layer film-forming step, an Ar gas and a CH4 gas are supplied into the chamber, a film-forming pressure is set to a pressure in a range of 0.2 Pa or more to less than 0.4 Pa, and a second bias voltage higher in bias voltage than a first bias voltage applied to the base material in the Ti layer film-forming step and higher in bias voltage than ?100 V is applied to the base material to film-form the TiC layer.

Abstract: An improved feeder system and method for a vapor transport deposition system that includes a carrier gas bypass flow line to allow for continuous carrier gas flow to a vaporizer unit when a vibratory unit which supplies powdered material and carrier gas to the vaporizer unit is out of service. A process gas flow line to the vibratory unit may be included when the powdered material contains a powdered dopant in the material mix.

Abstract: In one embodiment, a semiconductor manufacturing apparatus includes a carrier having first and second ends extending in a first direction, and third and fourth ends extending in a second direction and being not shorter than the first and second ends. The apparatus further includes a member holder having a magnet placement face on which first and second magnetic-pole portions are placed, the magnet placement face having fifth and sixth ends extending in the first direction and being shorter than the first and second ends, and seventh and eighth ends extending in the second direction, being longer than the fifth and sixth ends, and being longer than the third and fourth ends. The apparatus further includes a carrier transporter transporting the carrier along the first direction. The carrier transporter can transport the carrier such that the third and fourth ends pass under a center line of the magnet placement face.

Abstract: An apparatus and method for controlling the composition of liquid metal fed to an evaporator in a vacuum chamber used in a physical vapour deposition process.

Abstract: Methods described herein generally relate to producing patterned graphene. The method may include irradiating at least one focal point on a surface of a metal substrate with a laser beam in the presence of carbon dioxide, wherein the laser beam is generated by an ultra-short pulse laser; and causing the laser beam to move relative to the surface of the metal substrate such that the at least one focal point is displaced along a pattern on the surface, thereby producing a patterned graphene. Apparatuses for producing patterned graphene are also disclosed.

Abstract: A method of growing 2-D crystals includes: providing a plurality of sub-substrates; stacking the plurality of sub-substrates to form a stacked substrate; disposing the stacked substrate into a crystal-growing furnace; pumping a reaction gas into the crystal-growing furnace; and heating the crystal-growing furnace to enable the reaction gas to react on the stacked substrate, and at least one 2-D crystal is formed on at least one surface of the plurality of sub-substrates in the stacked substrate.

Abstract: The present invention discloses a graphene manufacturing system and the method thereof. In the prior arts, in order to grow graphene layers, a metal foil or thin film has to be prepared and disposed either on the surface or in the vicinity of the of the work piece so as to catalyze the decomposition of carbon feedstock nearby. In contrast, the present invention uses a fluid which contains catalyst metal ions as the source of catalysts and imports the catalytic particles from outside of the working chamber. The metal particles catalyze the decomposition of carbon feedstock at high temperature and cause the direct growth of graphene layers on insulator substrates. Therefore, the present invention is able to use cost-effective materials as the source of catalysts to grow graphene for practical applications.

Abstract: A coated cutting insert includes a substrate that is either a ceramic substrate or polycrystalline cubic boron nitride-containing substrate and has a substrate surface.

Abstract: A substrate holder holds a stack of substrates to be plasma-processed, and includes a ring-shaped part to be placed between adjacent substrates each of which includes a process surface to be plasma-processed and a non-process surface opposite from the process surface. The ring-shaped part includes a facing surface that faces the process surface of one of the adjacent substrates, and a protrusion formed along the outer periphery of the facing surface.

Abstract: A plasma-enhanced chemical vapour deposition (PE-CVD) apparatus includes a chamber including a circumferential pumping channel, a substrate support disposed within the chamber, one or more gas inlets for introducing gas into the chamber, a plasma production device for producing a plasma in the chamber, and an upper and a lower element positioned in the chamber. The upper element is spaced apart from the substrate support to confine the plasma and to define a first circumferential pumping gap, and the upper element acts as a radially inward wall of the circumferential pumping channel. The upper and lower elements are radially spaced apart to define a second circumferential pumping gap which acts as an entrance to the circumferential pumping channel, in which the second circumferential pumping gap is wider than the first circumferential pumping gap.

Abstract: To reduce pumping time of a vacuum treatment chamber served by a transport arrangement in a transport chamber. The vacuum treatment chamber is split in a workpiece treatment compartment and in a pumping compartment in mutual free flow communication and arranged opposite each other with respect to a movement path of the transport arrangement serving the vacuum treatment chamber. The pumping compartment allows providing a pumping port of a flow cross-section area freely selectable independently from the geometry of the treatment compartment.

Abstract: The present application relates to atomic layer deposition (ALD) processes for producing metal phosphates such as titanium phosphate, aluminum phosphate and lithium phosphate, as well as to ALD processes for depositing lithium silicates.

Abstract: A laminate (10) includes: a first substrate (11); an atomic layer deposition film (12) that is an inorganic oxide layer disposed on a first surface (11a) of the first substrate; a second substrate (14) disposed on one surface of the atomic layer deposition film; and a first adhesive layer (13) disposed between the atomic layer deposition film and the second substrate for adhering the atomic layer deposition film to the second substrate.

Abstract: A system for removing an oxide material from a surface of a substrate can include a substrate tray to receive the substrate, and a cooling body to receive the substrate tray. The system may include a first temperature control element configured to control a temperature of the substrate tray and a second temperature control element configured to control a temperature of the cooling body, where the first temperature control element and the second temperature control element can be independently controlled. A method for removing oxide material from a surface of a substrate can include providing the substrate on a substrate tray having heating elements, cooling the substrate by transferring heat from the substrate tray to a cooling body, depositing a halogen-containing material on the cooled substrate while the substrate is on the cooling body, and subsequently sublimating the halogen-containing material by heating the cooled substrate by transferring heat from the substrate tray to the substrate.

Abstract: Disclosed is a method of providing a constant concentration of a metal-containing precursor compound in the vapor phase in a carrier gas. Such method is particularly useful in supplying a constant concentration of a gaseous metal-containing compound to a plurality of vapor deposition reactors.

Abstract: A method of electroless gold plating includes a step of forming an underlying alloy layer on a base material and a step of forming a gold plate layer directly on the underlying alloy layer by electroless reduction plating using a cyanide-free gold plating bath. The underlying alloy layer is formed of an M1-M2-M3 alloy, where M1 is at least one element selected from Ni, Fe, Co, Cu, Zn, where Sn, M2 is at least one element selected from Pd, Re, Pt, Rh, Ag and where Ru, and M3 is at least one element selected from P and B.

Abstract: A method of electroless gold plating includes a step of forming an underlying alloy layer on a base material and a step of forming a gold plate layer directly on the underlying alloy layer by electroless reduction plating using a cyanide-free gold plating bath. The underlying alloy layer is formed of an M1-M2-M3 alloy, where M1 is at least one element selected from Ni, Fe, Co, Cu, Zn, where Sn, M2 is at least one element selected from Pd, Re, Pt, Rh, Ag and where Ru, and M3 is at least one element selected from P and B.

Abstract: Methods for treatment shaped bodies are described herein. The methods generally include contacting at least one shaped body with an aqueous acidic composition to form a conversion layer on a surface of the at least one shaped body, wherein the surface includes iron or steel and a carbon content in a range of 0 to 2.06 wt. % and a chrome content in a range of 0 to <10 wt. % and wherein the surface is optionally galvanized or alloy galvanized. The aqueous acidic composition includes water; from 2 to 500 g/L oxalic acid; and from 0.01 to 20 g/L of at least one catalyst based on guanidine, nitrate or combinations thereof, wherein a pickling removal of the aqueous acidic composition is in a range of 1 to 6 g/m2.

Abstract: Substrates having laser textured surfaces and methods for forming the same are described. The methods involve using a laser to form three-dimensional features on a surface of the substrate. The laser three-dimensional features can be designed to interact with incident light to create unique visual effects. In some embodiments, the substrate is further treated with a pre-anodizing process and an anodizing process to form a protective metal oxide coating. In some cases, the type of pre-anodizing and anodizing process are chosen based on the geometry of the three-dimensional features and to enhance the visual effects.

Abstract: A method for producing an at least partially enameled component shall enable a particularly high product quality with a particularly low energetic expenditure and a low environmental load. For this purpose, according to the invention, a workpiece (2) carrying an enamel powder is inductively heated, the operating frequency of the inductor (4) being chosen, in view of the material properties of the workpiece (2), such that the electromagnetic depth of penetration into the workpiece (2) is at most 1 mm.

Abstract: Provided herein is an apparatus, including a substrate; an etch stop layer overlying the substrate, wherein the etch stop layer is substantially resistant to etching conditions; and a patterned layer overlying the etch stop layer, wherein the patterned layer is substantially labile to the etching conditions, and wherein the patterned layer comprises a number of features including substantially consistent feature profiles among regions of high feature density and regions of low feature density.

Abstract: A method, and corresponding apparatus, of fabricating a structure by chemical wet etching starting from a material rod of millimetric or sub-millemetric size, the method comprising: dipping an end portion (170) of the material rod (128,129) into a vessel (105) containing an etchant liquid (110) and a protective overlayer (175) floating on top of the etchant liquid, imparting a relative rotational movement of the etchant liquid with respect to the end portion (170) of the material rod immersed therein, wherein said imparting a relative rotational movement comprises imparting to the etchant liquid a rotational movement component with respect to a static reference system.

Abstract: A system and method for removing metal from a substrate in a controlled manner is disclosed. The system includes a chamber, with one or more gas inlets to allow the flow of gasses into the chamber, at least one exhaust pump, to exhaust gasses from the chamber, and a heater, capable of modifying the temperature of the chamber. In some embodiments, one or more gasses are introduced into the chamber at a first temperature. The atoms in these gasses chemically react with the metal on the surface of the substrate to form a removable compound. The gasses are then exhausted from the chamber, leaving the removable compound on the surface of the substrate. The temperature of the chamber is then elevated to a second temperature, greater than the sublimation temperature of the removable compound. This increased temperature allows the removable compound to become gaseous and be exhausted from the chamber.

Abstract: The present invention relates to an electrochemical method for continuously producing a pure-oxygen gas and an oxygen-lean gas from an oxygen-containing gas mixture. At least two water electrolyzer units and two power supply units are used, of which each former solely corresponds to each latter, respectively. The two power supply units are at least one power supply unit of recycling hydrogen energy and an externally-connected power supply unit. The power supply unit of recycling hydrogen energy consists of hydrogen fuel cells, and the externally-connected power supply unit is comprised of at least one of the following cells and/or power supply, e.g. (a) solar cell(s), (a) direct methanol fuel cell(s), and/or an AC grid. In terms of the electrical circuit, each power supply unit is solely connected with the corresponding water electrolyzer unit.

Abstract: A system to prepare an antimicrobial solution by the electrolysis of brine is presented where the antimicrobial solution is a solution comprising HOCl that contains a HOCl concentration in excess of 500 ppm or more at a pH of 6 to 6.8 with a low residual salt concentration and displays a stability in excess of 60 days and can have a HOCl concentration in excess of 450 for 180 days. The system includes an electrolysis cell that is improved by a superior anode and ceramic membrane such that when employed with a DC power supply controlled by a microprocessor and a controlled brine concentration provided to the cell at ambient temperature at a controlled rate, delivers a fluid that is continuously monitored by a pH probe and an ORP probe for input to the microprocessor.

Abstract: The recycling hydrogen generator is an interactive system of chlorine filters and compartments for the reuse of electrolytic residue in hydrogen generation, including various size and type anodes and cathodes controlling the rate of hydrogen production; a pressure sensor and cut-off switch for the electricity to the terminals; and a breakable window for the instant remix of the electrolytic residue; all of which are required to ensure safety in the application of this small scale generator to individual automobile and home use.

Abstract: In one aspect, the present invention provides a curved grating structure manufacturing method which comprises: a grating forming step of forming, in one surface of a grating-forming workpiece, a grating region in which a plurality of members mutually having the same shape are periodically provided; a stress layer forming step of forming a stress layer capable of generating stress, on a grating plane-defining surface of the grating region; a boding step of bonding a support substrate to the stress layer; a polishing step of polishing the other surface of the grating-forming workpiece on a side opposite to the one surface having the support substrate bonded thereto; and a peeling step of peeling off the support substrate from the stress layer, wherein the polishing step includes performing the polishing to allow the grating-forming workpiece to be curved by a stress arising from the stress layer, after the peeling step.

Abstract: A film forming apparatus includes: an anode; a solid electrolyte membrane that is arranged between the anode and an substrate that serves as a cathode, and that contains metal ions; a power supply that applies a voltage between the anode and the substrate in a state in which the solid electrolyte membrane is in contact with the substrate from above; and an oscillating portion configured to oscillate at least the anode in the state in which the solid electrolyte membrane is in contact with the substrate.

Abstract: A silver-plated product, wherein the preferred orientation plane of a surface layer of silver is {111} plane and wherein the ratio of the full-width at half maximum of an X-ray diffraction peak on {111} plane after heating the silver-plated product at 50° C. for 168 hours to the full-width at half maximum of an X-ray diffraction peak on {111} plane before the heating of the silver-plated product is not less than 0.5, is produced by forming the surface layer on a base material by electroplating at a liquid temperature of 12 to 24° C. and a current density of 3 to 8 A/dm2 in a silver plating solution which contains 80 to 110 g/L of silver, 70 to 160 g/L of potassium cyanide and 55 to 70 mg/L of selenium, so as to cause the product of the concentration of potassium cyanide and the current density to be 840 g·A/L·dm2 or less.

Abstract: A coating forming device for forming a metal coating on a surface of a substrate includes: an anode; a power supply; and a solid electrolyte membrane disposed between the anode and the substrate and contains metal ions. The solid electrolyte membrane includes: a contact surface that is a region contacting a coating-forming region where the metal coating is formed; and a concave portion recessed relative to the contact surface such that, when the contact surface contacts the coating-forming region, the solid electrolyte membrane is not in contact with a portion of the surface of the substrate excluding the coating-forming region. The metal ions are reduced to form the metal coating on the coating-forming region by the power supply applying a voltage between the anode and the substrate.

Abstract: Provided is film formation apparatus of a metal film and a film formation method therefor capable of forming a homogeneous metal film of a uniform thickness stably, while being less affected by the surface state of the anode. A film formation apparatus 1A includes: an anode 11; a solid electrolyte membrane 13 disposed between the anode 11 and a base B serving as a cathode; and a power supply unit 14 to apply voltage between the anode 11 and the base B, the film formation apparatus being configured so that, when the solid electrolyte membrane 13 is brought into contact with a surface of the base B, and voltage is applied between the anode 11 and the base B, metal is deposited on the surface of the base B from metal ions included inside of the solid electrolyte membrane 13, so that the metal film F made of the metal is formed.

Abstract: A method of making property modulated composite materials includes depositing a first layer of material having a first microstructure/nanostructure on a substrate followed by depositing a second layer of material having a second microstructure/nanostructure that differs from the first layer. Multiple first and second layers can be deposited to form a composite material that includes a plurality of adjacent first and second layers. By controlling the microstructure/nanostructure of the layers, the material properties of the composite material formed by this method can be tailored for a specific use. The microstructures/nanostructures of the composite materials may be defined by one or more of grain size, grain boundary geometry, crystal orientation, and a defect density.

Abstract: The present invention provides a nickel and/or chromium plated member comprising a substrate, a pretreatment plating layer deposited over the whole substrate on which a copper plating layer is formed, a functional layer formed on the copper plating layer in which the functional layer has a low potential nickel layer and a microporous nickel layer formed on the low potential nickel layer, and a decorative layer formed on the microporous nickel layer. In this invention, the microporous nickel layer and the low potential nickel layer provided on the surface of the member significantly improve the corrosion resistance and stability of the whole member and provide good brightness uniformity and binding effect of the plating layers.

Abstract: The embodiments herein relate to methods and apparatus for electroplating one or more materials onto a substrate. In many cases the material is a metal and the substrate is a semiconductor wafer, though the embodiments are no so limited. Typically, the embodiments herein utilize a channeled plate positioned near the substrate, creating a cross flow manifold defined on the bottom by the channeled plate, on the top by the substrate, and on the sides by a cross flow confinement ring. Also typically present is an edge flow element configured to direct electrolyte into a corner formed between the substrate and substrate holder. During plating, fluid enters the cross flow manifold both upward through the channels in the channeled plate, and laterally through a cross flow side inlet positioned on one side of the cross flow confinement ring. The flow paths combine in the cross flow manifold and exit at the cross flow exit, which is positioned opposite the cross flow inlet.

Abstract: A method includes providing an aircraft component including a substrate made of composite material and a polymeric matrix; and applying a protective coating made of metallic material to the substrate. The protective coating is applied to the polymeric matrix by an electrolytic deposition process.

Abstract: Provided is a method for producing a surface-treated steel sheet including the step of forming a layer mainly composed of an oxygen compound containing Al onto a tin-plated steel sheet by conducting cathode electrolytic treatment to the tin-plated steel sheet using an electrolytic treatment solution containing Al ions and nitrate ions. For the electrolytic treatment solution, an electrolytic treatment solution not containing F ions and where the amount of nitrate ions contained is 11,500 to 25,000 ppm by weight is used.

Abstract: A plating apparatus includes: a plating bath configured to store a plating solution therein; a substrate transport device configured to remove a substrate before plating from a substrate cassette and return the substrate after plating to the substrate cassette; a substrate holder configured to detachably hold the substrate with a sealing member sealing a peripheral portion of the substrate and immerse the substrate in the plating solution in the plating bath; a dummy substrate arranged in a position accessible by the substrate transport device; and a substrate holder cleaning bath configured to immerse the substrate holder in a cleaning liquid to clean the substrate holder when holding the dummy substrate with the sealing member sealing a peripheral portion of the dummy substrate.

Abstract: A film forming method for forming an aluminum nitride film on a substrate in which at least a surface portion is formed of a single crystal silicon through an epitaxial growth under a vacuum atmosphere, includes performing one or more times a cycle including a first process of supplying a raw material gas containing an aluminum compound to the substrate and a second process of supplying an ammonia gas to form a seed layer formed of an aluminum nitride by a reaction of the ammonia gas and the aluminum compound adsorbed onto the silicon substrate, and simultaneously supplying the raw material gas containing the aluminum compound and the ammonia gas to form an aluminum nitride film on the seed layer.

Abstract: As one embodiment, the present invention provides a method for growing a ?-Ga2O3-based single crystal film by using HVPE method. The method includes a step of exposing a Ga2O3-based substrate to a gallium chloride-based gas and an oxygen-including gas, and growing a ?-Ga2O3-based single crystal film on a principal surface of the Ga2O3-based substrate at a growth temperature of not lower than 900° C.

Abstract: The present invention provides a method for producing a template for epitaxial growth, the method including: a surface treatment step of dispersing Ga atoms on a surface of a sapphire substrate; and an AlN growth step of epitaxially growing an AlN layer on the sapphire substrate, wherein in a Ga concentration distribution in a depth direction perpendicular to the surface of the sapphire substrate in an internal region of the AlN layer excluding a near-surface region up to a depth of 100 nm from the surface of the AlN layer, which is obtained by secondary ion mass spectrometry, a position in the depth direction where the Ga concentration takes the maximum value is present in a near-interface region located between the interface of the sapphire substrate and a position at 400 nm spaced apart from the interface to the AlN layer side, and the maximum value of the Ga concentration is 3×1017 atoms/cm3 or more and 2×1020 atoms/cm3 or less.

Abstract: A device includes an epitaxially grown crystalline material within an area confined by an insulator. A surface of the crystalline material has a reduced roughness. One example includes obtaining a surface with reduced roughness by creating process parameters which result in the dominant growth component of the crystal to be supplied laterally from side walls of the insulator. In a preferred embodiment, the area confined by the insulator is an opening in the insulator having an aspect ratio sufficient to trap defects using an ART technique.

Abstract: In order to correct warpage resulting from the formation of a multilayer film, provided are a single crystal substrate which includes a heat-denatured layer provided in one of two regions including a first region and a second region obtained by bisecting the single crystal substrate in a thickness direction thereof, and which is warped convexly toward a side of a surface of the region provided with the heat-denatured layer, a manufacturing method for the single crystal substrate, a manufacturing method for a single crystal substrate with a multilayer film using the single crystal substrate, and an element manufacturing method using the manufacturing method for a single crystal substrate with a multilayer film.

Abstract: The invention relates to a spinneret for extruding self-crimping hollow fibers including at least one capillary. The at least one capillary has at least one segmented opening, which has at least two opening segments spaced apart from each other in the cross-section. A first opening segment of the at least two opening segments has a first opening-segment width and a second opening segment of the at least two opening segments has a second opening-segment width. The second opening-segment width is wider than the first opening-segment width.

Abstract: The present invention relates to polyurethane elastic fibers obtained by spinning a polyurethane resin. The polyurethane resin includes, as constituent units, a diol (a1) having a number average molecular weight of 500 to 10,000, an organic diisocyanate (b), and a chain extender (a2). The total concentration of urethane groups and urea groups in the polyurethane resin is 1.25 to 2.50 mmol/g based on the weight of the polyurethane resin. Hard segment domains of the polyurethane resin have an average domain size of 20 to 30 nm as measured with an atomic force microscope.

Abstract: A method of producing, from a continuous or discontinuous (e.g., chopped) carbon fiber, partially to fully converted metal carbide fibers. The method comprises reacting a carbon fiber material with at least one of a metal or metal oxide source material at a temperature greater than a melting temperature of the metal or metal oxide source material (e.g., where practical, at a temperature greater than the vaporization temperature of the metal or metal oxide source material). Additional methods, various forms of carbon fiber, metal carbide fibers, and articles including the metal carbide fibers are also disclosed.

Abstract: Disclosed is an activated carbon fiber, more specifically, a filament-type activated carbon fiber that is manufactured by activating a filament-type precursor fiber for the activated carbon fiber and has a strength of 0.01 to 1.0 g/denier so as to have improved durability.

Abstract: A device for cutting off weft yarn (27) during successive weaving cycles, comprising a cutting element (1) and a rotatable detaining element (2c), (13) which is forced to a detaining position by a spring force in order to detain the yarn and can rotate, under the influence of a tensile force exerted by a rapier on the detained yarn, counter to the spring force to a non-detaining position in which the yarn can be moved further towards the cutting element (1) in order to be cut. Such a device is efficient and can be made to be more reliable and more compact than existing devices. The invention also relates to a weaving loom provided with such a device.

Abstract: Articles of knit fabric having a surface side and a base side, and including a set of ground yarns and a layer of effect yarns, wherein the ground yarns and effect yarns are knit through intermesh points in a predetermined arrangement, wherein the effect yarns are alternately arranged with the ground yarns, and wherein the ground yarns contain at least one elastic fiber and optionally at least one hard fiber, and the effect yarns contain at least one hard fiber or at least one elastic fiber are provided.

Abstract: The present invention relates to a knitting needle (1) for a knitting game for making knitted products having a round cross section with a first leg (3) extending rigidly from a rigid shaft section (2) in a first direction of extent (5) to a first free end (6) suitable for taking up stitches and a second leg (4) extending from the rigid shaft section (2) rigidly in a second direction of extent (7) to a second free end (8) suitable for taking up stitches, whereby the center of gravity (10) of the knitting needle (1) is arranged within the shaft section (2) and whereby the first direction of extent (5) and the second direction of extent (7) form an angle (9) relative to one another of at least 37° and less than 60°.