Abstract: A multilayer ceramic capacitor may include: a ceramic body in which dielectric layers having first via holes are stacked in a thickness direction; first internal electrodes having second via holes disposed in positions corresponding to those of the first via holes and exposed to at least one side surface of the ceramic body; second internal electrodes having third via holes disposed in positions corresponding to those of the first and second via holes; a via electrode passing through the first to third via holes to thereby be exposed to upper and lower surfaces of the ceramic body, and connected to the third via holes; and a first external electrode disposed on the at least one side surface of the ceramic body to be connected to a portion of the first internal electrode exposed to the exterior of the ceramic body.

Abstract: A multilayer ceramic capacitor includes a ceramic body including dielectric layers and having first and second side surfaces opposing each other; a first capacitor part including a first internal electrode exposed to the first side surface and a second internal electrode exposed to the second side surface and a second capacitor part including a third internal electrode exposed to the first side surface and a fourth internal electrode exposed to the second side surface; first and second internal connection conductors exposed to the first and second side surfaces; and first to fourth external electrodes formed on the first and second side surfaces and electrically connected to the first to fourth internal electrodes and the first and second internal connection conductors, the first and second capacitor parts being connected in series with the first and second internal connection conductors, respectively.

Abstract: An improved process for forming a capacitor, and improved capacitor formed thereby is described. The process includes: providing an anode comprising a dielectric thereon; applying a first layer of an intrinsically conducting polymer on the dielectric to form a capacitor precursor; applying at least one subsequent layer of an intrinsically conducting polymer on the first layer from a dispersion; and treating the capacitor precursor at a temperature of at least 50° C. no more than 200° C. at a relative humidity of at least 25% up to 100%, or fusing the layered structure by swelling the layered structure with a liquid and at least partially removing the liquid.

Abstract: A method of selecting the nanoporous carbon material for at least one of the polarizable electrodes (positive and/or negative) of EDLC with given organic electrolyte is suggested. The method includes providing of a number of nanoporous carbon materials, which can potentially be used for manufacturing the EDLC electrodes, impregnating the materials with the selected electrolyte followed by measuring the diffusion coefficients of anions and cations of the electrolyte inside the pores of the carbon materials and selecting for positive and negative electrodes the carbon materials, which provide the maximum diffusion coefficients of anions and cations, respectively. A method of manufacturing polarizable electrodes (positive and/or negative) and a method of manufacturing electrochemical double-layer capacitor based on the said method of selecting the nanoporous carbon material are also suggested.

Abstract: There is provided a method for producing a hybrid negative plate for a lead-acid storage battery which is improved in the production working efficiency and the productivity and enhances the quick charge and discharge characteristics and the discharge characteristics at a low temperature under PSOC of a lead-acid storage battery. A carbon mixture sheet produced by such a way that a carbon mixture prepared by mixing two types of carbon materials consisting of a first carbon material having electroconductivity and a second carbon material having capacitor capacitance and/or pseudocapacitor capacitance, and at least a binder, is adhered by pressure to the surface of a negative plate in a wet state, so that a hybrid negative plate is produced. The lead-acid storage battery provided with the hybrid negative plate is improved in the discharge characteristics.

Abstract: Intelligent safety disconnect switching methods and arrangements for PhotoVoltaic (PV) panels are disclosed. A determination is made as to whether a reconnect condition, for reconnecting a PV panel to a power system from which the PV panel is disconnected, is satisfied. The PV panel is automatically reconnected to the power system responsive to determining that the reconnect condition is satisfied. A determination is then made as to whether a power system operating condition is satisfied on reconnection of the PV panel, and the PV panel is automatically disconnected from the power system responsive to determining that the power system operating condition is not satisfied on reconnection of the PV panel.

Abstract: An action output device for a micro breaker, connecting with more than one micro breaker, includes: a shell, the shell comprises: a motor, which is for outputting a torque; an action unit, which is for achieving switching the micro breaker on and off, comprising a rotating part, a poking part, and a linking piece, wherein, the torque outputted by the motor is got by the rotating part; the linking piece is drove to swing by the poking part; the linking piece is connected with an action mechanism of the micro breaker for driving to switch on and off; and a control unit, which controls the motor turning on and off.

Abstract: A sliding space is defined between a first housing and a second housing. The slider has at least a portion arranged within a sliding space, and is configured to two-dimensionally slide within the sliding space in response to an operating force. The first housing and the slider defines an accommodation space having a point-symmetrical shape therebetween. An elastic member having a circular outer edge is arranged within the accommodation space. An outer edge of the elastic member abuts against an inner peripheral surface of the accommodation space (30) in a state where no operating force is applied to the slider. The elastic member is compressed by a portion of the inner peripheral surface of the accommodation space as the slider slides within the sliding space.

Abstract: Input device in which a defect of a control disk is eliminated while making use of an advantage of the control disk and an electronic device using the input device. The input device may include: an operation panel, which may be operated by a user; a board, which may be arranged to be opposed to a surface opposite to an operation surface of the operation panel operated by the user; a conductive elastic body and a pusher, which may be fixed on the operation panel; and a sensor portion and a member to be pressed, which may be placed on the board to be opposed to the conductive elastic body and the pusher, respectively.

Abstract: An arc-control chamber gear for contact electrodes, the gear possessing openings in collars of an electrode centering cap so as to break the confinement of the electrodes and allow them to be ventilated by gas convection between the inside volume heated by the flow of current and the cooler outside volume.

Abstract: An electrical contact configuration includes a first contact piece with a contact socket and a second contact piece which can move relative to the first contact piece. The second contact piece has a complementary shape to the first contact piece. An auxiliary contact piece is guided in such a way that it can move in the contact socket of the first contact piece. The auxiliary contact piece is guided in an electrically isolated manner.

Abstract: A driving battery of a vehicle that can be electrically driven is charged by determining a resistance value that corresponds to the size of the electrical resistance between two contacts of the charging cable, where the size of the electrical resistance specifies the current-carrying capacity of the charging cable. As a function of the determined resistance value, one of a plurality of line protection devices which are disposed on the charging device is switched into the charge current path.

Abstract: A switch assembly includes a switch unit having first and second conductive plates, and a switch control unit having a sliding member and a locking member. The sliding member has a closed cycle guide groove, and the locking member has a locking portion to slide in the guide groove. When the locking portion is engaged in a first locking site of the guide groove, the first and second conductive plates are stabilized in their electrically disconnected state. When the locking portion is engaged in a second locking site of the guide groove, the first and second conductive plates are stabilized in their electrically connected state.

Abstract: A relay assembly includes a switch body, an adaptor sleeve, a feed-through base, and an encapsulating resin. The switch body includes a flange extending orthogonally from a portion of a housing and leads. The adaptor sleeve is substantially cylindrical with apertures in the sleeve wall. A first end of the adaptor sleeve encircles at least a portion of the switch body and is attached to the flange. The feed-through base is attached to a second end of the adaptor sleeve to enclose the second end and includes holes through which conductors extend; contacts, inside the adaptor sleeve, joining each conductor to one of the leads; and insulators through which each conductor extends. The flange, adaptor sleeve, and feed-through base form an envelope around the portion of the housing, the contacts, and the leads. The resin fills the envelope and encapsulates the portion of the housing, the contacts, and the leads.

Abstract: A temperature sensing system comprises a conductive tube, a shape memory alloy (SMA) element, and a detector. The SMA element is disposed to create an electrical contact with the electrical tube when subjected to at least a critical temperature, and the detector is configured to identify an alarm condition when the conductive tube and the SMA element form a closed electrical circuit.

Abstract: Molded case circuit breakers (MCCBs) have an MCCB body with at least one switch printed circuit board (PCB) holding between 1-4 recessed switches. The switch PCB has a bottom primary surface and an opposing top primary surface and a cover residing over the switch PCB and attached to the MCCB case body so that an outer end portion of the 1-4 switches held by the switch PCB extends through the cover.

Abstract: The present invention relates to a control mechanism for the displacement of at least one moving contact of a low-voltage circuit-breaking device. The control mechanism comprises elastic means operatively connectable to the moving contact, at least a first element of which is operatively connected to a second element by means of pin-shaped connection means. The first and second elements each comprise a pair of facing lateral portions that are connected by a transverse portion. The pin-shaped connection means comprise a pair of pin-shaped ends, each of which emerges from one side of a lateral portion of the first element. Said pin-shaped means also comprise a pair of seats, each of which is defined on a lateral portion of the second element. Each pin-shaped end is inserted in a corresponding seat so as to configure an axis of mutual rotation between the first and the second elements.

Abstract: A fuse arrangement, including: at least a first terminal, a second terminal, and a fuse, wherein the first terminal and the second terminal may be electrically connected via the fuse, and wherein the fuse may be configured to be under fuse internal mechanical stress to deform the fuse along its width direction in case it is broken.

Abstract: An x-ray tube cathode with magnetic electron beam steering. In one example embodiment, an x-ray tube cathode includes a cathode head and an electron emitter. The cathode head includes electrically conductive and non-magnetic material integrated with magnetic material. The cathode head defines an emitter slot in a portion of electrically conductive and non-magnetic material positioned between two portions of magnetic material. The electron emitter is positioned within the emitter slot. The electron emitter is configured to emit a beam of electrons. The beam of electrons is configured to be both focused by the electrically conductive and non-magnetic material and steered during beam formation by the magnetic material.

Abstract: In a target structure according to the present invention, a target is provided on a central area of an insulating substrate, and a first conductive member for supplying a voltage to the target is provided on a peripheral area of the insulating substrate which is exclusive of an area overlapping the target and is not covered by the target, so that the first conductive member is in contact with and electrically connected to the peripheral portion of the target. Consequently, it is possible to easily form a voltage supply line to the target without preventing diffusion of a heat generated in the target to the substrate and while suppressing emission of an unnecessary X-ray.

Abstract: A substrate processing apparatus includes a chamber accommodating a wafer, a susceptor disposed inside the chamber and on which the wafer is held, an upper electrode facing the susceptor, and a second high frequency power source connected to the susceptor, wherein the upper electrode is electrically connected to a ground and is moveable with respect to the susceptor. The substrate processing apparatus divides a potential difference between plasma generated in a processing space and the ground into a potential difference between the plasma and a dielectric and a potential difference between the dielectric and the ground by burying the dielectric in the upper electrode, and changes a gap between the upper electrode and the susceptor. Accordingly, plasma density between the upper electrode and the susceptor is changed.

Abstract: A method of producing field emitters having improved brightness and durability relying on the creation of a liquid Taylor cone from electrically conductive materials having high melting points. The method calls for melting the end of a wire substrate with a focused laser beam, while imposing a high positive potential on the material. The resulting molten Taylor cone is subsequently rapidly quenched by cessation of the laser power. Rapid quenching is facilitated in large part by radiative cooling, resulting in structures having characteristics closely matching that of the original liquid Taylor cone. Frozen Taylor cones thus obtained yield desirable tip end forms for field emission sources in electron beam applications. Regeneration of the frozen Taylor cones in-situ is readily accomplished by repeating the initial formation procedures. The high temperature liquid Taylor cones can also be employed as bright ion sources with chemical elements previously considered impractical to implement.

Abstract: A method for improving the ion beam quality in an ion implanter is disclosed. In some ion implantation systems, contaminants from the ion source are extracted with the desired ions, introducing contaminants to the workpiece. These contaminants may be impurities in the ion source chamber. This problem is exacerbated when mass analysis of the extracted ion beam is not performed, and is further exaggerated when the desired feedgas includes a halogen. The introduction of a diluent gas in the ion chamber may reduce the deleterious effects of the halogen on the inner surfaces of the chamber, reducing contaminants in the extracted ion beam. In some embodiments, the diluent gas may be germane or silane.

Abstract: A holder assembly comprises a first and a separable second part, the first part detachable from the second part, the first part comprising a tube and an environmental cell interface and the second part comprising an electron microscope interface, as a result of which the first part can be cleaned at high temperatures without exposing the second part to said high temperature. By forming the holder assembly from detachable parts, one part can be cleaned by heating it to a high temperature of, for example, 1000° C., clogging in the tubes can be removed by reduction of carbon, while keeping the other part (often comprising mechanical fittings, ball bearing, sliders, or such like) cool. The cleaning can be enhanced by blowing, for example, oxygen or hydrogen through the tubes.

Abstract: A method of performing spectroscopy in a Transmission Charged-Particle Microscope comprising: a specimen holder; a source, for producing a beam of charged particles; an illuminator, for directing said beam so as to irradiate the specimen; an imaging system, for directing a flux of charged particles transmitted through the specimen onto a spectroscopic apparatus comprising a dispersing device for dispersing said flux into an energy-resolved array of spectral sub-beams, the method comprising: using an adjustable aperture device to admit a first portion of said array to a detector, while blocking a second portion of said array; providing; using a radiation sensor in said flux upstream of said aperture device to perform localized radiation sensing in a selected region of said second portion of the array, simultaneous with detection of said first portion by said detector; using a sensing result from said sensor to adjust a detection result from said detector.

Abstract: A method for monitoring ion implantation, comprising: a), providing a control piece and forming a mask layer; b), performing ion implantation process to implant a predetermined dose of impurity ions into the control piece, an area on the control piece uncovered by the mask layer being an impurity implantation area and an area on the control piece covered by the mask layer being an impurity non-implantation area; c), peeling off the mask layer from the control piece; d), performing oxidation treatment on the control piece; and e), respectively measuring thicknesses of the oxide layers on the impurity implantation area and the impurity non-implantation area of the control piece, and monitoring the impurity dose of the ion implantation on the basis of a ratio of the thickness of the oxide layer in the impurity implantation area to the thickness of the oxide layer in the impurity non-implantation area.

Abstract: The present invention relates to an ion implantation machine 100 that comprises: an enclosure 101 that is connected to a pump device 102; a plasma source 115-121-122; a bias power supply 113; a gas inlet 117 leading into the enclosure; and a substrate-carrier 104 connected to the negative pole of the bias power supply and arranged inside the enclosure. The machine is remarkable in that: the substrate-carrier 104 consists in at least two parallel plates 105-106; a reference electrode consists in at least one strip 110, this reference electrode being connected to the positive pole of the bias power supply; and the strip is interposed between the two plates.

Abstract: This disclosure describes systems, methods, and apparatus for capacitively coupling energy into a plasma to ignite and sustain the plasma within a remote plasma source. The power is provided by a first electrode that at least partially surrounds or is surrounded by a second electrode. The second electrode can be grounded or floating. First and second dielectric components can be arranged to separate one or both of the electrodes from the plasma and thereby DC isolate the plasma from one or both of the electrodes.

Abstract: A detector system for a mass spectrometer comprises: a metal channel dynode (MCD) comprising at least one perforated metal plate configured to receive the exiting ions and eject electrons in response; a plurality of electron-to-photon converters arranged in a parallel stacked configuration, each such converter comprising a substrate plate having a phosphor coating on a first face; and an electrode film disposed on the phosphor coating; at least one photocathode, each of the at least one photocathode disposed between a respective pair of the plurality of electron-to-photon converters; an optical detector optically coupled a last one of the electron-to-photon converters; and at least one direct current power supply configured to apply, in operation, a respective bias electrical potential to the MCD and each of the electrode films and photocathodes.

Abstract: A sample chamber is configured to accommodate a target such that a portion of the target is removable as a sample. A carrier gas injection system is configured to introduce a carrier gas into the sample region from a first position and a second position within the sample chamber such that at least a portion of the sample is entrainable by the carrier gas within the sample region. A portion of the sample region is located between the first position and the second position. A sample transport conduit is configured to transport at least a portion of the sample entrained by the carrier gas to a location outside the sample chamber.

Abstract: A method of making an ion optics component includes providing an electrically isolating substrate and machining away material of the substrate from at least one major surface thereof to form features of a first electrode sub-assembly. The formed features include a first surface for supporting integration of a first electrode body and a second surface for supporting integration of a second electrode body. Subsequent plating and masking steps result in the formation of a first electrode body on the first surface and a second electrode body on the second surface. A bridge is integrally formed in the electrically isolating material, so as to electrically isolate the first electrode body from the second electrode body.

Abstract: An analytical apparatus (1) for mass spectrometry comprises an electron impact ioniser including an electron emitter (22) and an ionisation target zone (18). The target zone (18) is arranged to be populated with matter to be ionised for analysis. An electron extracting element (36) is aligned with an electron pathway (34) defined between the electron emitter (22) and the ionisation target zone (18). The electron extracting element (36) is configured to accelerate electrons away from the emitter (22) along the electron pathway (34) between the emitter (22) and the extracting element (36) and to decelerate the electrons along the electron pathway (34) between the extracting element (36) and the ionisation target zone (18) to enable soft ionisation while avoiding the effects of coulombic repulsion at the electron source (22).

Abstract: Apparatus and methods for creating a pulsed ion beam. The pulsed ion beam can be used for performing mass spectrometry. A pulsed solenoid valve can provide a pulsed ion beam from an electrospray in a pre-vacuum chamber. The pulsed ion beam can enter a high vacuum region and a mass analyzer for mass spectrometry.

Abstract: A method for identifying components of a sample includes providing a sample to an ion source and generating a plurality of ions from constituent components of the sample, applying a first RF waveform at a first RF amplitude to an ion trap with field resonances while directing the plurality of ions into the ion trap, and applying a second RF waveform at a second RF amplitude to the ion trap while focusing the plurality of ions towards the center of the ion trap along the longitudinal axis. The method further includes ejecting the plurality of ions from the ion trap into a mass analyzer, and using the mass analyzer to determine the mass-to-charge ratio of the ions.

Abstract: An induction RF fluorescent lamp, comprising a vitreous envelope filled with a working gas mixture, a power coupler comprising at least one winding of an electrical conductor for receiving an alternating voltage and current to generate an alternating magnetic field and thereby induce an alternating electric field within the lamp envelope, an electronic ballast providing appropriate voltage and current to the power coupler and a main mercury amalgam having a vapor pressure at room temperature which is higher than the vapor pressure of the mercury amalgam formed on the flag.

Abstract: The present invention provides a method for cleaning and drying a semiconductor substrate in which a semiconductor substrate onto which a pattern has been formed is cleaned and dried, which comprises steps of (1) cleaning the semiconductor substrate onto which a pattern has been formed with a cleaning solution, (2) substituting the cleaning solution with a composition solution containing a resin (A) which is decomposed by either or both of an acid and heat, and (3) decomposing and removing the resin (A) by either or both of an acid and heat. There can be provided a method for cleaning and drying a semiconductor substrate in which pattern falling or collapse occurring at the time of drying the cleaning solution after cleaning the substrate can be suppressed, and the cleaning solution can be efficiently removed, without using a specific apparatus which handles a supercritical state cleaning solution.

Abstract: A method of manufacture and fluid supply system for treating a substrate is provided. The fluid supply system for treating a substrate may include a substrate dry part supplying a dry fluid to dry a rinse solution doped on a substrate; a dry fluid separation part retrieving a mixed fluid that the dry fluid and the rinse solution are mixed with each other during a dry process of the substrate from the substrate dry part and separating the dry fluid from the mixed fluid; and a dry fluid supply part resupplying the dry fluid separated from the dry fluid separation part to the substrate dry part.

Abstract: The present disclosure provides a method for forming a semiconductor device. The method includes providing a substrate and forming a dielectric layer on the substrate by a deposition process using reactant gases. The reactant gases include a silicon-source gas and an oxygen-source gas under a radio-frequency (RF) power. The deposition process performed for a total deposition time to form the dielectric layer is divided into a first time length, a second time length and a third time length. The RF power of the deposition process in the first time length is a first power, the first power gradually increases from the first power to a second power in the second time length, the RF power in the third time length is the second power, and the first power is less than the second power.

Abstract: A method for making semiconductor devices may include forming a phosphosilicate glass (PSG) layer on a semiconductor wafer, with the PSG layer having a phosphine residual surface portion. The method may further include exposing the phosphine residual surface portion to a reactant plasma to integrate at least some of the phosphine residual surface portion into the PSG layer. The method may additionally include forming a mask layer on the PSG layer after the exposing.

Abstract: A method of manufacturing a semiconductor device includes forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes non-simultaneously performing: forming a first layer by supplying a precursor gas including a chemical bond of a first element and carbon and a first catalyst gas to the substrate; exhausting the precursor gas and the first catalyst gas through an exhaust system; forming a second layer by supplying a reaction gas including a second element and a second catalyst gas to the substrate to modify the first layer; and exhausting the reaction gas and the second catalyst gas through the exhaust system. At least in a specific cycle, the respective gases are supplied and confined in the process chamber while closing the exhaust system in at least one of the act of forming the first layer and the act of forming the second layer.

Abstract: A system and method for manufacturing a semiconductor device is provided. An embodiment comprises forming a deposited layer using an atomic layer deposition (ALD) process. The ALD process may utilize a first precursor for a first time period, a first purge for a second time period longer than the first time period, a second precursor for a third time period longer than the first time period, and a second purge for a fourth time period longer than the third time period.

Abstract: A nitride-based semiconductor light-emitting device includes a light-emitting stack comprising a first semiconductor structure having a first conductivity, a second semiconductor structure having a second conductivity, and an active region interposed the first semiconductor structure and the second semiconductor structure; a semiconductor buffer structure formed under the first semiconductor structure; and an un-doped AlGaN layer formed between the first semiconductor structure and the semiconductor buffer structure.

Abstract: A method of fabricating a semiconductor device includes forming line patterns over a first region of an etch target layer and a pre-pad pattern over second and third regions of the etch target layer; forming pillars over the line patterns and a sacrificial pad pattern over the pre-pad pattern; forming first spacers over sidewalls of the pillars such that the first spacers contact one another and form first pre-openings therebetween; removing the pillars to form second pre-openings; cutting the line patterns through the first and second pre-openings, and forming cut patterns; etching the pre-pad pattern using the sacrificial pad pattern as an etch mask, and forming a pad pattern; and etching the etch target layer using the cut patterns and the pad pattern as an etch mask, to define first patterns and a second pattern over the first region and the second region, respectively.

Abstract: A composition for forming a resist underlayer film for lithography, including: as a silane, a hydrolyzable organosilane, a hydrolysate of the hydrolyzable organosilane, or a hydrolysis-condensation product of the hydrolyzable organosilane, wherein the hydrolyzable organosilane is a compound of Formula (1): [(R1)aSi(R2)(3?a)]b(R3)??Formula (1) [in Formula (1), R3 is an organic group having a sulfonyl group and a light-absorbing group and is bonded to a Si atom through a Si—C bond; R1 is an alkyl, aryl, aralkyl, halogenated alkyl, halogenated aryl, halogenated aralkyl, alkenyl, an organic group having an epoxy, acryloyl, methacryloyl, mercapto, alkoxyaryl, acyloxyaryl, isocyanurate, hydroxy, cyclic amino, or a cyano group, or a combination of any of these groups and is bonded to a Si atom through a Si—C bond; R2 is an alkoxy group, an acyloxy group, or a halogen group; a is an integer of 0 to 2; and b is an integer of 1 to 3].

Abstract: A heterogeneous integrated circuit and method of making the same. An integrated circuit includes a surrogate substrate including a material selected from the group consisting of Group II, Group III, Group IV, Group V, and Group VI materials and their combinations; at least one active semiconductor device including a material combination selected from the group consisting of Group IV-IV, Group III-V and Group II-VI materials; and at least one transferred semiconductor device including a material combination selected from the group consisting of Group IV-IV, Group III-V and Group II-VI materials. The at least one active semiconductor device and the at least one transferred device are interconnected.

Abstract: An aqueous polishing composition comprising (A) abrasive ceria particles and (B) amphiphilic nonionic surfactants selected water-soluble and water-dispersible, linear and branched polyoxyalkylene blockcopolymers of the general formula I: R[(B1)m/(B2)nY]p (I), wherein the indices and the variables have the following meaning: m, n, and p integers?1; R hydrogen atom or monovalent or polyvalent organic residue, except C5-C20 alkyl groups; (B1) block of oxyethylene monomer units; (B2) block of substituted oxyalkylene monomer units wherein the substituents are selected from two methyl groups, alkyl groups of more than two carbon atoms and cycloalkyl, aryl, alkyl-cycloalkyl, alkyl-aryl, cycloalkyl-aryl and alkyl-cycloalkyl-aryl groups; and Y hydrogen atom or monovalent organic residue, except C5-C20 alkyl groups; with the proviso that when (B) contains more than one block (B1) or (B2) two blocks of the same type are separated by a block of the other type.

Abstract: A method of etching trenches into silicon of a semiconductor substrate includes forming a mask over silicon of a semiconductor substrate, with the mask comprising trenches formed there-through. Plasma etching is conducted to form trenches into the silicon of the semiconductor substrate using the mask. In one embodiment, the plasma etching includes forming an etching plasma using precursor gases which include SF6, an oxygen-containing compound, and a nitrogen-containing compound. In one embodiment, the plasma etching includes an etching plasma which includes a sulfur-containing component, an oxygen-containing component, and NFx.

Abstract: Disclosed is a plasma etching method including a deposition process and an etching process. For a processing target object including a base layer and a photoresist having a predetermined pattern which are laminated in sequence, the deposition process deposits a protective layer including silicon and carbon on the photoresist of the processing target object by plasma of a first processing gas including silicon tetrachloride gas, methane gas, and hydrogen gas. The etching process etches the base layer by plasma of a second processing gas using the photoresist including the protective layer deposited thereon, as a mask. The second processing gas is different from the first processing gas.

Abstract: A dry etching method according to the present invention is for etching a silicon layer as a processing target in a processing room, characterized by supplying an iodine heptafluoride-containing etching gas from a gas supply source at a supply pressure of 66 kPa to 0.5 MPa, evacuating the processing room to an internal pressure lower than the supply pressure of the etching gas and, while maintaining the etching gas at the supply pressure, introducing the etching gas into the evacuated processing room so as to etch the silicon layer by the etching gas. It is possible by this dry etching method to etch the silicon upon adiabatic expansion of the etching gas under mild pressure conditions, with no fear of equipment load and equipment cost increase, and achieve good uniformity of in-plane etching amount distribution.

Abstract: A line layout and a spacer self-aligned quadruple patterning method thereof are provided. The line layout includes a first line, a second line, a third line, and a fourth line. The second line and the third line are disposed between the first line and the fourth line. The first line, the second line, the third line, and the fourth line respectively extend in a first direction. An end segment of the second line and an end segment of the third line respectively include a first protrusion portions that extend in a second direction. The first protrusion portion of the end segment of the second line protrudes toward the first line. The first protrusion portion of the end segment of the third line protrudes toward the fourth line.