Abstract: The present invention is directed to the discovery of single nucleotide polymorphisms (SNPs) in the presence of metronidazole-resistant Trichomonas vaginalis. The presence of G76C, C213G, or C318A (SNP) in tvntr 4 or the presence of A238T, G427C, or T476C (SNP) in tvntr6 provides a reliable biomarker for the presence of metronidazole-resistant Trichomonas vaginalis. The present invention further provides reagents used for detecting the SNPs to screen subjects for metronidazole resistance in Trichomonas vaginalis.

Abstract: A process for detecting Haemophilus influenzae nucleic acid in a sample includes producing an amplification product by amplifying a Haemophilus influenzae nucleotide sequence and measuring the amplification product to detect Haemophilus influenzae in the sample. Some embodiments allow direct serotype determination in a single step assay. Also provided are reagents and methods for detecting and distinguishing Haemophilus influenzae from other infectious agents. A kit is provided for detecting and quantifying Haemophilus influenzae in a sample.

Abstract: The invention relates to the field of virology. The invention provides an isolated essentially mammalian negative-sense single-stranded RNA virus (MPV) within the subfamily Pneumovirinae of the family Paramyxoviridae and identifiable as phylogenetically corresponding to the genus Metapneumovirus and components thereof.

Abstract: The present invention relates to a method for detecting Human Papilloma Virus (HPV), in particular, to a method for detecting HPV based on Solexa sequencing method.

Abstract: A selective removal of metal and its anion species that are detrimental to subsequent hydrothermal hydrocatalytic conversion from the biomass feed prior to carrying out catalytic hydrogenation/hydrogenolysis/hydrodeoxygenation of the biomass in a manner that does not reduce the effectiveness of the hydrothermal hydrocatalytic treatment while minimizing the amount of water used in the process is provided.

Abstract: A heat treatment method of manufacturing high carbon bearing steel having excellent abrasion resistance and fatigue resistance, a steel wire rod for high carbon bearing steel subjected to the heat treatment, a manufacturing method of the steel wire rod, high carbon bearing steel manufactured by the heat treatment and a soaking method of a steel bloom used for manufacturing the steel wire rod. The heat treatment method of bearings includes the steps of: quenching a bearing-shaped steel part containing, by weight, 0.5% to 1.20% carbon and 1.0% to 2.0% silicon; and partitioning the quenched steel part at a temperature ranging from Ms?100° C. to Ms for at least 10 minutes, where Ms represents a temperature at which formation of martensite will start.

Abstract: The heat treatment method of the present invention includes: a first step of mist cooling a treatment object retained at a prescribed temperature by supplying mist-like coolant, to a target temperature near to and higher than a first transformation point at which a structure of the treatment object begins to be transformed into a prescribed structure; a second step, following the first step, of retaining the treatment object for a prescribed time in a state where supply of mist-like coolant is stopped; and a third step, following the second step, of cooling the treatment object to a temperature lower than or equal to the first transformation point. According to the present invention, it is possible to provide a heat treatment method capable of suppressing irregularity and deformation in the structure of the treatment object.

Abstract: Disclosed is a strip, sheet or blank suitable for hot forming at a temperature of 700° C. or above, including a substrate of hot formable steel, optionally coated with an active corrosion protective coating. The optionally coated steel substrate is provided with a ceramic based coating having a thickness of at most 25 micron. Also disclosed is a process to produce such strip, sheet or blank.

Abstract: A method for producing a workpiece having properties which are adjustable across a wall thickness or strip thickness of the workpiece, includes the steps of subjecting the workpiece to a decarburizing annealing treatment under an oxidizing atmosphere and to an accelerated cooling and/or a cold forming for generating a property gradient of the workpiece, wherein the workpiece is made of an austenitic lightweight steel which has an alloy composition which includes by weight percent 0.2% to 1% carbon, 0.05% to<15% aluminum, 0.05% to 6.0% silicon, 9% to<30% manganese, and at least one element selected from the group consisting of chromium, copper, boron, titanium, zirconium, vanadium and niobium, wherein chromium=4.0%; titanium+zirconium=0.7%; niobium+vanadium=0.5%, boron=1%, the remainder iron including common steel companion elements.

Abstract: A rail heat treatment device includes a cooling header, an oscillation mechanism, and a control system including: a storage unit that stores therein at least information required for a oscillation control; and a control unit that obtains a permissible range of required cooling time for a rail that satisfies a permissible range of hardness of the rail based on a correlation expression representing a correlation between the cooling time for the rail with the cooling header and the hardness of the rail after cooling, controls a stroke and a speed of relative reciprocation of the rail and the cooling header based on the permissible range of the required cooling time, and causes the oscillation mechanism to perform the relative reciprocation of the rail and the cooling header by the stroke and at the speed.

Abstract: Disclosed is a process of leaching gold that can be inexpensively and efficiently carried out from a mixture containing sulfur and gold, typically from the material containing sulfur and gold that is an intermediate product recovered by the flotation method in the hydrometallurgical method. Specifically, disclosed is a process of leaching gold from the mixture containing elemental sulfur and gold, the process involving combining the mixture containing elemental sulfur and gold and an aqueous solution of hydroxide of one or more of metals of alkali metals and alkaline earth metals, the hydroxides reacting with elemental sulfur to form thiosulfate of alkali and/or alkaline earth metal, and the gold thereby being leached by reaction with the thiosulfate.

Abstract: One aspect of the present disclosure is directed to a metastable ? titanium alloy comprising, in weight percentages: up to 0.05 nitrogen; up to 0.10 carbon; up to 0.015 hydrogen; up to 0.10 iron; greater than 0.20 oxygen; 14.00 to 16.00 molybdenum; titanium; and incidental impurities. Articles of manufacture including the alloy also are disclosed.

Abstract: A tin-containing magnesium-aluminum-manganese (Mg—Al—Mn) based alloy that provides a desired combination of strength and ductility so as to be particularly suited for structural applications. The alloy includes magnesium, aluminum, and manganese in combination and about 0.5% to about 3.5% tin. The tin addition improves strength without substantial loss of ductility.

Abstract: An alloy and an implant having a three-dimensional structure based on such alloy. The alloy comprises a MgZnCa alloy containing nanosized precipitates being less noble than the Mg matrix alloy and having a Zn content ranging 0.1 wt. % Zn to 2 wt. % Zn and a calcium content ranging from 0.2 wt. % to 0.5 wt. %, and having less than 0.04 wt. % of one or more other elements with the remainder being Mg. For these micro-alloys, any second phase generated during the solidification process can be completely dissolved by a solution heat treatment. Finely dispersed nanosized precipitates can then be generated by a subsequent aging heat treatment step. These precipitates are used to “pin” the grain boundaries and to prevent the coarsening of the grain structure during further processing to achieve grain sizes below 5 ?m.

Abstract: Hardened cobalt alloys for forming jewelry, including finger rings as well as methods and processes for producing such alloys. In one illustrative embodiment, such an alloy can contain cobalt in an amount of from about 35 wt % to about 65 wt %, in combination with chromium in an amount of from about 16 % wt to about 32 wt %, and molybdenum in an amount of from about 8 wt % to about 31 wt %. Aluminum, silicon, boron, titanium, and other hardness enhancing materials may also be present. Hot investment casting may be used to form items from the alloys, which may then be shaped or polished to a final form. Annular finger rings constructed from these materials may have a white appearance similar to white gold or platinum, may have increased resistance to scratching compared to traditional cobalt chromium rings, and may be easily be removed by cracking in an emergency situation.

Abstract: A process for manufacturing a cold rolled high strength dual phase steel. The process includes soaking a steel slab within a temperature range of 1200-1300° C., hot rolling the soaked steel slab in a roughing treatment and producing a transfer bar, and hot rolling the transfer bar in a finishing treatment and producing hot rolled strip. The hot rolled strip is cold rolled with at least a 55% reduction in thickness. The cold rolled sheet is intercritically annealed at a temperature between 790-840° C. and rapidly cooled to a temperature between 450-500° C. The rapidly cooled sheet has a ferrite plus martensite microstructure, a 0.2% yield strength of at least 550 MPa, a tensile strength of at least 980 MPa and a total elongation to failure of at least 10%.

Abstract: A dual phase or complex phase steel strip showing no tigerstripes. The steel strip includes, in mass percent, the following elements: C 0.08-0.11%; Mn 1.70-2.20%; Si at most 0.1%; Cr 0.40-0.70%; Mo at most 0.3%; Ni at most 1.0%, Al 0.01-1.50%; Nb at most 0.07%; P equal to or more than 0.005%; N equal to or less than 0.015%; Ti equal to or less than 0.1%; V equal to or less than 0.1%; B equal to or less than 0.01%; wherein the sum of Cr, Mo and Ni is at least 0.5%; the balance being Fe and inevitable impurities.

Abstract: Provided is a vertical annealing furnace, in which a heating zone and a soaking zone are communicated with each other in the upper part of the furnace, in which a part of the furnace other than the communicated parts is separated by a dividing wall, in which part of the furnace gas is suctioned into a refiner having a deoxidation device and a dehumidification device which is placed outside the furnace to decrease the dew point of the gas by removing oxygen and moisture from the gas and such that the resultant gas having a decreased dew point is returned into the furnace, in which a gas suction port into the refiner is located in the lower part of the connection part between the soaking zone and the cooling zone and in which one or more gas suction ports are located in the parts of the heating zone and/or the soaking zone outside of an area within 6 m in the vertical direction and 3 m in the longitudinal direction of the furnace from the steel strip entrance in the lower part of the heating zone.

Abstract: A system for treating wire includes an elongated vessel that contains a molten fluid. A pump is disposed in the molten fluid in the vessel. The pump includes an elongated discharge conduit extending for at least a portion of the length of the vessel. Conveyance structure enables the wire to be conveyed through the molten fluid. Operation of the pump enables a temperature of the molten fluid in the vessel to be changed. The wire is heat treated as a result of passing through the molten fluid.

Abstract: In a method for ejecting droplets of a molten metal, the metal is an alloy including a first metal and a second metal. During a jetting operation, the second metal segregates from the first metal. A method of using such alloy is also disclosed herein.

Abstract: Provided is a method of manufacturing a nitrocarburized crankshaft which is obtained by subjecting a bainitic microalloyed steel to a forging and a machining, and further subjecting the bainitic microalloyed steel to at least a strain releasing heat treatment and a subsequent nitrocarburizing treatment, the bainitic microalloyed steel containing, as essentially added elements, in terms of mass %: 0.10% to 0.40% of C; 0.10% to 1.0% of Si; 1.0% to 2.0% of Mn; 0.05% to 0.40% of Mo; and 0.05% to 0.40% of V, and the bainitic microalloyed steel optionally further containing, as arbitrarily added elements, in terms of mass %: 0.01% to 0.1% of S; 0.005% to 0.2% of Ti; 0.001% to 0.03% of Al; 0.50% or less of Cr; 0.5% or less of Cu; and 0.5% or less of Ni, with the balance being Fe and unavoidable impurities.

Abstract: A method of depositing a dielectric thin film may include: depositing a thin layer of dielectric; stopping deposition of the dielectric layer, and modifying the gas in the chamber if desired; inducing and maintaining a plasma in the vicinity of the substrate to provide ion bombardment of the deposited layer of dielectric; and repeating the depositing, stopping and inducing and maintaining steps until a desired thickness of dielectric is deposited. A variation on this method may include, in place of the repeating step: depositing a thick layer of lower quality dielectric; depositing a thin layer of high quality dielectric; stopping deposition of the dielectric layer, and modifying the gas in the chamber if desired; and inducing and maintaining a plasma in the vicinity of the substrate to provide ion bombardment of the deposited layer of dielectric. The thick layer of dielectric may be deposited more rapidly than the thin layers.

Abstract: The invention provides an optical device and manufacture thereof. The optical device of the invention includes a transparent substrate, a seeding layer, a plurality of nano-rods and a protection layer. The seeding layer is formed to overlay an entrance surface and an exit surface of the transparent substrate. The plurality of nano-rods are formed on the seeding layer. The protection layer is formed to completely overlay the plurality of nano-rods.

Abstract: Liquid precursor material of a coating substance and a solvent is provided in a reservoir (STEP1, STEP1?). In one variant the liquid precursor material is distilled (STEP2), the resultant liquid coating substance is vaporized (STEP3) and ejected through a vapor distribution nozzle arrangement (7) into a vacuum recipient (3) and onto substrate 5 to be coated. Alternatively, the liquid precursor material is directly vaporized (STEP3?). From the two-component vapor coating substance vapor is applied to substrate 5? to be coated. In this variant separation of solvent vapor and coating substance vapor is performed especially downstream vaporizing (STEP2?).

Abstract: A thin film deposition apparatus includes a deposition source that is disposed opposite to a substrate and holds a deposition material that is vaporized; a first nozzle unit disposed between the substrate and the deposition source and having first slit units arranged in a first direction of the substrate; a second nozzle unit disposed between the first nozzle unit and the substrate and having second slit units arranged in the first direction of the substrate; and at least one barrier member assembly disposed between the first nozzle unit and the second nozzle unit and partitioning the space between the first nozzle unit and the second nozzle unit. A deposition blade is optionally disposed in any space formed between the first nozzle unit and the second nozzle unit during a stand-by mode to prevent the deposition of the deposition material from being deposited onto undesirable regions of the chamber.

Abstract: A dielectric film forming apparatus and a method for forming a dielectric film so as to form a dielectric film with a (100)/(001) orientation. A dielectric film forming apparatus includes a deposition preventive plate heating portion that heats a deposition preventive plate disposed in a position where particles discharged from a target adhere. Sputtering gas is introduced from a sputtering gas introduction unit into a vacuum chamber. The deposition preventive plate is heated to a temperature higher than a film forming temperature so as to emit vapor from a thin film adhered to the deposition preventive plate. After a seed layer is formed on a substrate, the substrate is heated to the film forming temperature, and AC voltage is applied to the target from a power supply and then, the target is sputtered so as to form a dielectric film on the substrate.

Abstract: Methods and apparatus for processing substrates are provided herein. In some embodiments, a physical vapor deposition chamber includes a first RF power supply having a first base frequency and coupled to one of a target or a substrate support; and a second RF power supply having a second base frequency and coupled to one of the target or the substrate support, wherein the first and second base frequencies are integral multiples of each other, wherein the second base frequency is modified to an offset second base frequency that is not an integral multiple of the first base frequency.

Abstract: In a plasma enhanced physical vapor deposition of a material onto workpiece, a metal target faces the workpiece across a target-to-workpiece gap less than a diameter of the workpiece. A carrier gas is introduced into the chamber and gas pressure in the chamber is maintained above a threshold pressure at which mean free path is less than 5% of the gap. RF plasma source power from a VHF generator is applied to the target to generate a capacitively coupled plasma at the target, the VHF generator having a frequency exceeding 30 MHz. The plasma is extended across the gap to the workpiece by providing through the workpiece a first VHF ground return path at the frequency of the VHF generator.

Abstract: A deposition apparatus includes a shutter storage unit which is connected to a processing chamber via an opening and stores a shutter in the retracted state into an exhaust chamber, and a shield member which is formed around the opening of the shutter storage unit and covers the exhaust port of the exhaust chamber. The shield member has, at a position of a predetermined height between the opening of the shutter storage unit and a deposition unit, the first exhaust path which communicates with the exhaust port of the exhaust chamber.

Abstract: A process for producing nanocomposite materials for use in batteries includes electroactive materials are incorporated within a nanosheet host material. The process may include treatment at high temperatures and doping to obtain desirable properties.

Abstract: Amorphous silicon (a-Si) is hydrogenated for use as a dielectric (e.g., an interlayer dielectric) for superconducting electronics. A hydrogenated a-Si layer is formed on a substrate by CVD or sputtering. The hydrogen may be integrated during or after the a-Si deposition. After the layer is formed, it is first annealed in an environment of high hydrogen chemical potential and subsequently annealed in an environment of low hydrogen chemical potential. Optionally, the a-Si (or an H-permeable overlayer, if added) may be capped with a hydrogen barrier before removing the substrate from the environment of low hydrogen chemical potential.

Abstract: Provided is a substrate processing apparatus.

Abstract: A precursor source vessel comprises a vessel body, a passage within the vessel body, and a valve attached to a surface of the body. An internal chamber is adapted to contain a chemical reactant, and the passage extends from outside the body to the chamber. The valve regulates flow through the passage. The vessel has inlet and outlet valves, and optionally a vent valve for venting internal gas. An external gas panel can include at least one valve fluidly interposed between the outlet valve and a substrate reaction chamber. Gas panel valves can each be positioned along a plane that is generally parallel to, and no more than about 10.0 cm from, a flat surface of the vessel. Filters in a vessel lid or wall filter gas flow through the vessel's valves. A quick-connection assembly allows fast and easy connection of the vessel to a gas panel.

Abstract: A system of gas lines for a processing chamber and a method of forming a gas line system for a processing chamber are provided. The system of gas lines includes electropolished multi-way valves that connect electropolished linear gas lines. By using multi-way valves rather than tee-fittings and electropolishing the linear gas lines, the nucleation of contaminating particles in the system of gas lines may be reduced.

Abstract: Provided is a substrate processing apparatus. The substrate processing apparatus includes a chamber body having an opened upper side, the chamber body providing an inner space in which processes with respect to a substrate are performed, a chamber lid disposed on an upper portion of the chamber body to close the opened upper side of the chamber body, and a showerhead disposed on a lower portion of the chamber lid to supply a reaction gas into the inner space. The showerhead includes a flange contacting the chamber lid, the flange having a passage recessed from a top surface of the flange to allow a refrigerant to flow therein, and a flat plate disposed inside the flange, the flat plate having at least one injection hole for injecting the reaction gas in a thickness direction thereof.

Abstract: A method and apparatus for processing a substrate are provided. The apparatus includes a pedestal and rotation member, both of which are moveably disposed within a processing chamber. The rotation member is adapted to rotate a substrate disposed in the chamber. The substrate may be supported by an edge ring during processing. The edge ring may selectively engage either the pedestal or the rotation member. In one embodiment, the edge ring engages the pedestal during a deposition process and the edge ring engages the rotation member during rotation of the substrate. The rotation of the substrate during processing may be discrete or continuous.

Abstract: A method and apparatus for manufacturing a lattice structure of a material on a substrate, wherein the process may be performed at atmospheric pressure, may not require a metallic substrate, may be capable of continuously generating the lattice structure as long as desired, may be as thin as a single layer of the lattice material, and may create the lattice structure with any material that is capable of being vaporized to create a stream of ionized particles and then condensed to form the lattice structure.

Abstract: Methods for reducing particle generation in a processing chamber are disclosed. The methods generally include generating a plasma between a powered top electrode and a grounded bottom electrode, wherein the top electrode is parallel to the bottom electrode, and applying a constant zero DC bias voltage to the powered top electrode during a film deposition process to minimize the electrical potential difference between the powered top electrode and the plasma and/or the electrical potential difference between the grounded bottom electrode and the plasma.

Abstract: Disclosed is a method of manufacturing a semiconductor device including: performing a pre-process to a substrate, on a surface of which a metal film or a GST film is formed, such that a first film is formed on the metal film or the GST film by executing at least one cycle of alternately performing (i) supplying a first processing gas, and (ii) supplying a second processing gas that is not activated by plasma excitation; and performing a formation process to the substrate to which the pre-process has been performed such that a second film is formed on the first film by executing at least one cycle of alternately (i) supplying the first processing gas, and (ii) supplying the second processing gas that is activated by plasma excitation.

Abstract: The purpose of the present invention is to provide a wiring substrate from which a metal film cannot be detached easily. A process for forming a metal film comprises a step (X) of applying an agent containing a compound (?) onto the surface of a base and a step (Y) of forming a metal film on the surface of the compound (?) by a wet-mode plating technique, wherein the compound (?) is a compound having either an OH group or an OH-generating group, an azide group and a triazine ring per molecule, and the base comprises a polymer.

Abstract: If incorporated in a cleaning system using persulfuric acid, the invention serves for continuous cleaning while increasing the persulfuric acid concentration adequately to ensure enhanced cleaning performance. The invention provides a feeding apparatus that feeds persulfuric acid to a cleaning apparatus. The cleaning system uses an electrolysis reactor 10 that regenerates the persulfuric acid solution by performing electrolytic reaction to produce persulfate ions from sulfate ions contained in the solution, and a circulation line 4, 5, 6 that circulates the persulfuric acid solution between the cleaning vessel 1 and the electrolysis reactor 10. Configured as above, the invention can provides a feeding apparatus. The cleaning system comprises said configuration and a cleaning vessel 1 that cleans objects 30 using a persulfuric acid solution 2 as cleaning fluid.

Abstract: A CO2 reduction electrode includes an active layer on an electrode base. The active layer includes a polymer that includes one or more reaction components selected from a group consisting of a CO2 reduction catalyst and an activator that bonds CO2 so as to form a CO2 reduction intermediate.

Abstract: A method for electrofilling large, high aspect ratio recessed features with copper without depositing substantial amounts of copper in the field region is provided. The method allows completely filling recessed features having aspect ratios of at least about 5:1 such as at least about 10:1, and widths of at least about 1 ?m in a substantially void-free manner without depositing more than 5% of copper in the field region (relative to the thickness deposited in the recessed feature). The method involves contacting the substrate having one or more large, high aspect ratio recessed features (such as a TSVs) with an electrolyte comprising copper ions and an organic dual state inhibitor (DSI) configured for inhibiting copper deposition in the field region, and electrodepositing copper under potential-controlled conditions, where the potential is controlled not exceed the critical potential of the DSI.

Abstract: Provided are a method for forming a pattern, and a catalyst and an electronic element using the method. The method for forming a pattern comprises the steps of: preparing, on a surface, a substrate sequentially including a photoconductive material layer and an oxide layer; making an area, on which a pattern is to be formed, on the oxide layer of the substrate, come into contact with an electrolyte; connecting the substrate and the electrolyte to a first electrode and a second electrode connected to a power source, respectively; and selectively irradiating light from a light source to the electrolyte and applying a voltage to the first electrode or the second electrode, thereby directly forming the pattern on the oxide layer of the substrate.

Abstract: The present invention provides a device for single-sided electrolytic treatment of a flat substrate. The device comprises a bath for electrolytic fluid and conveying means for conveying the flat substrate in a conveying direction at the free surface of the fluid in the bath, with the flat substrate being horizontally oriented such that the underside of the flat substrate makes contact with the free surface of the fluid in the bath. The conveying means comprise two conveying elements disposed opposite each other, which extend along two respective conveying paths, which conveying paths each comprise an electrolytic part, which electrolytic parts extend on two opposite longitudinal sides of the bath.

Abstract: Provided are a method of fabricating a photonic crystal having a desired photonic bandgap, and a method of fabricating a color filter, including providing a photonic crystal solution in which a plurality of colloidal particles that are electrically charged are dispersed, mixing a photopolymerizable monomer mixture in the photonic crystal solution to form a photopolymerizable monomer-crystal mixture, applying an electric field to the photopolymerizable monomer-crystal mixture to electrically control intervals between the plurality of colloidal particles, and irradiating ultraviolet light to the photopolymerizable monomer-crystal mixture to photopolymerize the monomer mixture to form the photonic crystal or the color filter.

Abstract: The present invention is to provide a substrate holder which can effect a more complete sealing with a sealing member and makes it possible to take a substrate out of the substrate holder easily and securely, and also a plating apparatus provided with the substrate holder. The substrate holder includes: a fixed holding member and a movable holding member for holding a substrate therebetween; a sealing member mounted to the fixed holding member or the movable holding member; and a suction pad for attracting a back surface of the substrate held between the fixed holding member and the movable holding member.

Abstract: Electroplating systems that include a plurality of electrodes, a power supply operably coupled to the plurality of electrodes, a platen for bearing a substrate on which metal features are to be formed, and an electrode support are disclosed. The electrode support may be configured for suspending the electrode assembly over an upper surface of the substrate disposed on the platen in spaced relation to and in alignment with the substrate or for supporting the electrode assembly in a stationary position over the substrate when the voltage is applied across the plurality of electrodes. The electrodes may be adjacent, mutually spaced and electrically isolated and connected in series so as to be oppositely polarized when the voltage is applied thereacross or may be connected so as to have alternating polarities when the voltage is applied thereacross.

Abstract: A coating method for coating a crucible and a quartz crucible for growing a silicon crystal are provided. In the coating method, a bubble-free quartz layer which is 80 ?m to 4 mm thick is formed on an inner surface of a crucible for growing a silicon crystal, and the surface of the bubble-free quartz layer is covered with alkaline earth hydroxide, following which heating is performed to a temperature at which the surface becomes devitrified. The surface may be covered by immersing the inner surface in a solution of the alkaline earth hydroxide. The heating may be performed before the crucible for growing silicon crystal is filled with a solid raw material to be melted.

Abstract: The present invention is provided with a support on a gripping member, the support being composed of linear springs which elastically support an engaging portion. Thus, the support can be reused, and generation of rupture and dislocation of a single crystal ingot from a gripping part of the engaging portion can be prevented.