Abstract: A light-emitting device, including a substrate; a plurality of light-emitting units formed on the substrate, wherein the plurality of light-emitting units include a first light-emitting unit; a second light-emitting unit; and a group of light-emitting units formed between the first light-emitting unit and the second light-emitting unit, wherein each of the plurality of light-emitting unit includes a first-type semiconductor layer, a second-type semiconductor layer and an active layer formed between the first-type semiconductor layer and the second-type semiconductor layer; a plurality of electrical connections formed on the plurality of light-emitting units, electrically connecting each two of the light-emitting units adjacent; a first pad formed on the first light-emitting unit; a second pad and a third pad formed on the second light-emitting unit; wherein one of the plurality of electrical connection connects and extends from the second pad.

Abstract: Vertical solid-state transducers (“SSTs”) having backside contacts are disclosed herein. An SST in accordance with a particular embodiment can include a transducer structure having a first semiconductor material at a first side of the SST, a second semiconductor material at a second side of the SST opposite the first side, and an active region between the first and second semiconductor materials. The SST can further include first and second contacts electrically coupled to the first and second semiconductor materials, respectively. A portion of the first contact can be covered by a dielectric material, and a portion can remain exposed through the dielectric material. A conductive carrier substrate can be disposed on the dielectric material. An isolating via can extend through the conductive carrier substrate to the dielectric material and surround the exposed portion of the first contact to define first and second terminals electrically accessible from the first side.

Abstract: An LED support assembly and an LED module are provided. The LED support assembly includes: a metal heat sink, a first ceramic substrate and a second ceramic substrate, the metal heat sink defines an upper surface; the first ceramic substrate is adapted to support a LED chip and disposed on the upper surface of the metal heat sink; the second ceramic substrate is adapted to support electrodes of the LED chip and surrounds the first ceramic substrate.

Abstract: A thermoelectric structure may include a thermally conductive substrate, and a plurality of thermoelectric elements arranged on a surface of the thermally conductive substrate. Moreover, each thermoelectric element may be non-parallel and non-orthogonal with respect to the surface of the thermally conductive substrate. For example, each of thermoelectric elements may be a planar thermoelectric element, and a plane of each of the thermoelectric elements may be oriented obliquely with respect to the surface of the thermally conductive substrate.

Abstract: A thermoelectric device and a method for manufacturing the same are provided. The thermoelectric device includes a middle substrate, electrodes, N-type thermopiles, and P-type thermopiles, in which the N-type thermopile and the P-type thermopile are electrically connected to each other by the electrodes in series. The thermoelectric device includes further includes an upper substrate bonded to an upper surface of the middle substrate and a lower substrate bonded to a lower surface of the substrate, such that a temperature difference is provided between opposite sides of each of the N-type thermopiles and the P-type thermopiles.

Abstract: In a configuration to join thermoelectric elements with an electrode in a thermoelectric module, reduction in junction reliability between the thermoelectric elements and the electrode is suppressed in a high-temperature environment and in an environment in which vibration and shock are imposed as load, to efficiently transmit the outer-circumferential temperature to the thermoelectric elements. In a thermoelectric module in which a plurality of p-type thermoelectric elements and a plurality of n-type thermoelectric element are alternately arranged by aligning the surfaces thereof on the high-temperature side and the surfaces thereof on the low-temperature side, to electrically connect the thermoelectric elements in series to each other; the p-type thermoelectric elements and the n-type thermoelectric element are joined via an intermediate layer with a deformable stress relaxation electrode, to thereby absorb stress taking place during the module assembling process and the module operation by the electrode.

Abstract: The present invention relates to a thermoelectric conversion element and a method for manufacturing the same and relates to suppression of breakage and deterioration of the thermoelectric conversion element due to partial pressurization from the vertical direction. This thermoelectric conversion element has: at least one n-type semiconductor body; at least one p-type semiconductor body; a first connecting electrode; a first out-put electrode for n-side output; and a second output electrode for p-side output, wherein areas of respective joint sections of the n-type semiconductor body with the first connecting electrode, the first output electrode, and the second output electrode and of the p-type semiconductor body with the first connecting electrode, the first output electrode, and the second output electrode are greater than respective cross-sectional areas in other positions, in an axial direction, of the n-type semiconductor body and the p-type semiconductor body.

Abstract: Operational characteristics of an high temperature superconducting (“HTS”) film comprised of an HTS material may be improved by depositing a modifying material onto appropriate surfaces of the HTS film to create a modified HTS film. In some implementations of the invention, the HTS film may be in the form of a “c-film.” In some implementations of the invention, the HTS film may be in the form of an “a-b film,” an “a-film” or a “b-film.” The modified HTS film has improved operational characteristics over the HTS film alone or without the modifying material. Such operational characteristics may include operating in a superconducting state at increased temperatures, carrying additional electrical charge, operating with improved magnetic properties, operating with improved mechanic properties or other improved operational characteristics. In some implementations of the invention, the HTS material is a mixed-valence copper-oxide perovskite, such as, but not limited to YBCO.

Abstract: In an embodiment, an electroacoustic transducer has a piezoelectric speaker 20, housing, and support member 23. The piezoelectric speaker 20 has a vibration plate 11 with a periphery 111, and a piezoelectric element 12 joined to the vibration plate 11. The housing houses the piezoelectric speaker 20. The support member 23 is constituted by a part of the housing or by a separate member, and supports the vibration plate 11 in multiple areas along the periphery 111. The electroacoustic transducer can offer excellent high-frequency characteristics.

Abstract: In object to provide a unit of piezoelectric element having a preferable bending strength and preferably used as a part of a driving unit, a unit of piezoelectric element comprising: a multilayer piezoelectric element, having internal electrodes laminated having a piezoelectric body layer in-between and a pair of external electrodes formed on side surfaces extending along laminating direction and electrically connected to the internal electrodes, a wiring part connected to the external electrodes via a solder part, wherein a solder is solidified, a resin part, joining one end surface in the laminating direction of the multilayer piezoelectric element and a mounting surface of a connection member placed to face the one end surface, wherein the resin part is continuous from the one end surface and the mounting surface to the solder part; and the resin part covers the solder part, is provided.

Abstract: Disclosed are a piezoelectric element and a piezoelectric vibrator having the same. The piezoelectric element and the piezoelectric vibrator having the same in accordance with an embodiment of the present invention include: a piezoelectric material formed by laminating a plurality of ceramic layers with one another; internal electrodes formed, respectively, on surfaces of the ceramic layers; and a pair of cover layers formed, respectively, above and below the piezoelectric material in order to protect the internal electrodes, and at least one of the cover layers includes: a plurality of crystal grains; and crack inhibiting particles disposed at boundaries between the plurality of crystal grains and configured to inhibit a crack from spreading in the cover layers.

Abstract: A technique relates to a semiconductor device. First metal contacts are formed on top of a substrate. The first metal contacts are arranged in a first direction, and the first metal contacts are arranged such that areas of the substrate remain exposed. Insulator pads are positioned at predefined locations on top of the first metal contacts, such that the insulator pads are spaced from one another. Second metal contacts are formed on top of the insulator pads, such that the second metal contacts are arranged in a second direction different from the first direction. The first and second metal contacts sandwich the insulator pads at the predefined locations. Surface-sensitive conductive channels are formed to contact the first metal contacts and the second metal contacts. Four-terminal devices are defined by the surface-sensitive conductive channels contacting a pair of the first metal contacts and contacting a pair of the metal contacts.

Abstract: A method of making a magnetoresistive structure is disclosed. The method includes forming a pillar structure including a magnetic tunnel junction on a substrate that includes a first electrode, depositing a stressed layer onto a pillar structure sidewall, and depositing a second electrode above the magnetic tunnel junction.

Abstract: A magnetic tunnel junction (MTJ) and methods for fabricating a MTJ are described. An MTJ includes a fixed layer and a barrier layer on the fixed layer. Such an MTJ also includes a free layer interfacing with the barrier layer. The free layer has a crystal structure in accordance with the barrier layer. The MTJ further includes an amorphous capping layer interfacing with the free layer.

Abstract: In a case where reactive ion etching using a gas containing an oxygen atom is used for etching or a magnetoresistive element, a magnetic film becomes damaged due to oxidation. Such damage to the element by the oxidation becomes a factor which causes deterioration in element properties. In the etching of the magnetoresistive element according to one embodiment of the present invention, a magnetoresistive film is subjected to ion beam etching and thereafter to reactive ion etching. A side deposition formed by the ion beam etching coats a sidewall of the magnetoresistive film and reduces damage by the oxygen atom during the later reactive ion etching. Also, a time during which the element is exposed to plasma of the gas containing the oxygen atom can be reduced.

Abstract: According to one embodiment, a memory device includes a plug, a variable resistance film provided on the plug, and an electrode provided on the variable resistance film. The variable resistance film includes, a first portion having a superlattice structure, and a second portion having an amorphous structure.

Abstract: Provision of fabrication, construction, and/or assembly of a two-terminal memory device is described herein. The two-terminal memory device can include an active region with a silicon bearing layer, an interface layer, and an active metal layer. The interface layer can created comprising a non-stoichiometric sub-oxide that can be a combination of multiple silicon and/or silicon oxide layers with an aggregate chemical formula of SiOX, where X can be a non-integer greater than zero and less than 2. The sub-oxide can be created in a variety of ways, including various techniques related to growing the sub-oxide, depositing the sub-oxide, or transforming an extant film into the sub-oxide.

Abstract: A semiconductor apparatus includes a variable resistor including a variable resistance layer, which is formed to surround on an inner surface of a resistive region, and an insert layer which is formed in the variable resistance layer and has a resistivity being different from that of the variable resistance layer.

Abstract: A semiconductor device includes first electrodes disposed upon a substrate, wherein each first electrode comprises a metal containing material, switching devices disposed overlying the first electrodes, wherein each switching device comprises a first switching material, a second switching material, and an active metal, wherein the first switching material is disposed overlying and contacting the first electrodes, wherein the second switching material is disposed overlying and contacting the first switching material, wherein the active metal is disposed overlying and contacting the second switching material, wherein the first switching material is characterized by a first switching voltage, wherein the second switching material is characterized by a second switching voltage greater than the first switching voltage; and second electrodes disposed above the switching devices, comprising the metal material, and wherein each of the second electrodes is electrically coupled to the active metal material of the switc

Abstract: Methods of depositing silicon nitride encapsulation layers by atomic layer deposition over memory devices including chalcogenide material are provided herein. Methods include using iodine-containing silicon precursors and depositing thermally using ammonia or hydrazine as a second reactant, or iodine-containing silicon precursors and depositing using a nitrogen-based or hydrogen-based plasma.

Abstract: A donor substrate for a laser transfer includes a base layer, a primer layer disposed on the base layer, a light-to-heat conversion layer disposed on the primer layer, and an intermediate layer disposed on the light-to-heat conversion layer, where the light-to-heat conversion layer includes graphene.

Abstract: A photoelectric conversion device that contains a polymer compound having a structural unit represented by formula (1) having high photoelectric conversion efficiency: wherein, X1 and X2 are the same or different and represent a nitrogen atom or ?CH—; Y1 represents a sulfur atom, an oxygen atom, a selenium atom, —N(R1)— or —CR2?CR3—; R1, R2 and R3 are the same or different and represent a hydrogen atom or a substituent; W1 represents a cyano group, a monovalent organic group having a fluorine atom or a halogen atom; W2 represents a cyano group, a monovalent organic group having a fluorine atom, a halogen atom or a hydrogen atom.

Abstract: The present invention is to provide a composition that can provide an electroluminescent device emitting light with high brightness. The present invention provides following: a composition including a polymer compound comprising one or more structural unit(s) selected from the group consisting of a structural unit represented by Formula (1), a structural unit represented by Formula (3), a structural unit represented by Formula (5), a structural unit represented by Formula (16), a structural unit represented by Formula (18), a structural unit represented by Formula (20), and a structural unit represented by Formula (22) and an ionic compound represented by Formula (23); an organic film and an electric device comprising the composition.

Abstract: A system for forming a functionalized sensor for sensing a molecule of interest includes at least one single or multi-wall carbon nanotube having a first and a second electrode in contact therewith on a substrate; a third electrode including a decorating material on the substrate a predetermined distance from the at least one single or multi-wall carbon nanotube having a first and a second electrode in contact therewith, wherein the decorating material has a bonding affinity for bioreceptors that react with the molecule of interest; and wherein applying a voltage to the third electrode causes the decorating material to form nanoparticles of the decorating material on the at least one single or multi-wall carbon nanotube.

Abstract: An organic light-emitting device includes: a first electrode; a second electrode facing the first electrode; and an organic layer between the first electrode and the second electrode and including an emission layer, wherein the emission layer includes at least one first host selected from compounds represented by Formula 1 and at least one second host selected from compounds represented by Formula 2:

Abstract: A chrysene-based compound and an organic light-emitting device including the same, the chrysene-based compound being represented by Formula 1, below:

Abstract: A condensed cyclic compound and an organic light-emitting device including the same, the compound being represented by Formula 1, below: Ar1-(L11)b1-(L1)a1-(L12)b2-Ar2??<Formula 1>

Abstract: The present invention relates to a novel stable benzo[h]hexaphene compound and an organic light-emitting device including the compound. The present invention provides a benzo[h]hexaphene shown in claim 1.

Abstract: A heterocyclic compound represented by Formula 1 and an organic light-emitting diode including the same:

Abstract: An organic light-emitting device (OLED) includes a first electrode; a second electrode facing the first electrode; an emission layer (EML) between the first electrode and the second electrode; a hole transport region between the first electrode and the EML; an electron transport region between the EML and the second electrode; and an interlayer between the EML and the hole transport region, wherein the interlayer includes an amine-based compound represented by Formula 1 or 2: where Ar1, Ar2, R1-R4, Z11-Z21, p, and q are as defined in the specification.

Abstract: Provided is a long-lifetime organic light-emitting element having a good device lifetime characteristic. The organic light-emitting device includes: a pair of electrodes; and an organic compound layer placed between the pair of electrodes, in which the organic compound layer includes an iridium complex having a specific structure and a different kind of metal complex.

Abstract: A material for organic electroluminescence element, including: a phosphorescent compound; and a discotic liquid-crystalline host compound, wherein the phosphorescent compound has an aspect ratio of molecule core diameter to molecule core thickness (molecule core diameter/molecule core thickness) of at least 3, and wherein a size ratio of the molecular radius of the phosphorescent compound to the molecular radius of the discotic liquid-crystalline host compound (molecular radius of the phosphorescent compound/molecular radius of the discotic liquid-crystalline host compound) is 0.8 to 1.2.

Abstract: There is provided a resin composition for use in formation of a protective film to protect a substrate or a film formed on the substrate, from a developer containing an organic solvent to be used for development in pattern formation, and which contains two or more kinds of resins in which their main chain structures having a hydroxyl group are different, and contains water, a pattern forming method using the resin composition, and layered products comprising a substrate, an organic semiconductor film on the substrate, and a protective film comprising two or more kinds of resins in which their main chain structures having a hydroxyl group are different, on the organic semiconductor film.

Abstract: Various examples are provided for ambipolar vertical field effect transistors (VFETs). In one example, among others, an ambipolar VFET includes a gate layer; a source layer that is electrically percolating and perforated; a dielectric layer; a drain layer; and a semiconducting channel layer. The semiconducting channel layer is in contact with at least a portion of the source layer and at least a portion of the dielectric layer and the source layer and the semiconducting channel layer form a gate voltage tunable charge injection barrier. Another example includes an ambipolar vertical field effect transistor including a dielectric surface treatment layer. The semiconducting channel layer is in contact with at least a portion of the source layer and at least a portion of the dielectric surface treatment layer and where the source layer and the semiconducting channel layer form a gate voltage tunable charge injection barrier.

Abstract: The OLEDs of the present invention are characterized by providing an organic thin film layer comprising a single layer or plural layers between a cathode and an anode, wherein the organic thin film layer comprises at least one organic light emitting layer, wherein at least one light emitting layer comprises at least one host material and at least one phosphorescent emitter material, wherein the host material comprises a bis-carbazole derivative host material; and the phosphorescent emitter material comprises a phosphorescent organometallic complex having a substituted chemical structure represented by one of the following partial chemical structures represented by the formula: LL?L?M wherein M is a metal that forms octahedral complexes, L, L?, L? are equivalent or inequivalent bidentate ligands wherein each L comprises a substituted or unsubstituted phenylpyridine ligand coordinated to M through an sp2 hybridized carbon and N; and one of L, L? and L? is inequivalent to at least one of the other two.

Abstract: An exemplary embodiment discloses an organic light emitting display panel including a base substrate comprising first pixels configured to emit a light having a first wavelength and second pixels configured to emit a light having a second wavelength and a pixel definition layer disposed on the base substrate. The pixel definition layer includes first and second openings. The first opening corresponds to light emitting areas of n (n is a natural number equal to or greater than 2) first pixels among the first pixels. The second opening corresponds to light emitting areas of m (m is a natural number equal to or greater than 1 and smaller than n) second pixels among the second pixels. An area of the light emitting area of each of the first pixels is smaller than an area of the light emitting area of each of the second pixels.

Abstract: Generally, the devices provided herein comprise at least a hole-transport layer, two light-emitting layers, and an electron-transport layer, each having a highest occupied molecular orbital (HOMO) energy level and a lowest unoccupied molecular orbital (LUMO) energy level, wherein at least one of the HOMO energy levels and/or the LUMO energy levels of at least one of the light-emitting layers does not decrease in a stepwise fashion.

Abstract: A composition for forming a transparent electrode is to form a conductive polymer layer on a transparent substrate. The composition includes: a conductive polymer; a self-dispersing polymer dispersible in an aqueous solvent; water; a polar solvent other than water; and a glycol ether. The self-dispersing polymer is a self-dispersing polymer containing a dissociable group and having a glass transition temperature of 25° C. or more and 80° C. or less.

Abstract: A light emitting device having a structure in which oxygen and moisture are prevented from reaching light emitting elements, and a method of manufacturing the same, are provided. Further, the light emitting elements are sealed by using a small number of process steps, without enclosing a drying agent. The present invention has a top surface emission structure. A substrate on which the light emitting elements are formed is bonded to a transparent sealing substrate. The structure is one in which a transparent second sealing material covers the entire surface of a pixel region when bonding the two substrates, and a first sealing material (having a higher viscosity than the second sealing material), which contains a gap material (filler, fine particles, or the like) for protecting a gap between the two substrates, surrounds the pixel region. The two substrates are sealed by the first sealing material and the second sealing material.

Abstract: An electro-optic device includes: a first substrate that includes a first surface; an optical element that is disposed in a first region on the first surface; a casing that is disposed to overlap with a part of the optical element along an outer periphery of the first region on the first surface and includes first and second end portions; a first resin layer that is disposed on an inside of the second end portion of the casing on the first surface and is installed to overlap with at least a part of the optical element; a second resin layer that is disposed on the first resin layer; and a second substrate that faces the first surface and is disposed on the second resin layer.

Abstract: A display device is disclosed. In one aspect, the display device comprises a display panel, a window cover, at least one align key and a sealing portion. The display panel includes a substrate, a display unit formed over the substrate, and an encapsulation portion formed over the display unit. The window cover is formed over the display panel. The at least one align key is formed on the encapsulation portion and configured to align the display panel with the window cover. The sealing portion is formed between the substrate and the encapsulation portion, wherein the align key has at least one laser beam through portion passing through the encapsulation portion and is connected to the sealing portion.

Abstract: A method of manufacturing a display device includes bonding together a first substrate and a second substrate sandwiching a first bonding material and a second bonding material, a substrate being formed by bonding the first and the second substrate and including a plurality of the display devices, the first bonding material being arranged in at least a display region, the second bonding material being a part of a terminal region and being arranged so as to cover the terminal, and the second bonding material having a stronger adhesion per unit area with respect to the second substrate than the first bonding material; cutting the second substrate at a cutting position between the terminal region and the display region for each of the display devices; removing the second substrate of the terminal region from the display device; and separating each of the display devices from the plurality of display devices.

Abstract: An organic light emitting diode comprising a first electrode layer, a second electrode layer, a stack of functional layers, including an organic light-emitting layer, sandwiched between said first electrode layer and said second electrode layer, and an passivation layer arranged adjacent to said first electrode layer is disclosed. The passivation layer reacts with the first electrode layer to form an oxide at a reaction temperature that is induced by an evolving short circuit between the first electrode layer and the second electrode layer. The passivation layer is unreactive at temperatures lower than the reaction temperature.

Abstract: An organic light-emitting display (OLED) device includes: a pixel area defined by a plurality of pixels on a flexible substrate; a non-pixel area around the pixel area; a gate driver in the non-pixel area; a structure in the non-pixel area configured to surround the pixel area; a first encapsulation layer covering the plurality of pixels, the gate driver and the structure; and a particle cover layer covering the pixel area and suppressed from being excessively spread by the structure.

Abstract: A barrier film that contains primarily silicon nitride has a total hydrogen concentration of 3×1022 atoms/cm3 or higher and a silicon-bonded hydrogen concentration proportion of 40% or higher, the total hydrogen concentration indicating a total of a concentration of hydrogen bonded to silicon and a concentration of hydrogen bonded to nitrogen, and the silicon-bonded hydrogen concentration proportion indicating a proportion of the concentration of hydrogen bonded to silicon to the total hydrogen concentration.

Abstract: The invention relates to a light source (1) comprising a light generating unit (2) like an organic light emitting diode and an outcoupling device (3) for coupling light out of the light generating unit in an outcoupling direction (4). The outcoupling device comprises a first region (5) for facing the light generating unit, a second region (7) having a refractive index being smaller than the refractive index of the first region, and a structured intermediate region (6) between the first region and the second region. The first region is optically homogenous and has a thickness in the outcoupling direction being larger than a coherence length of the light, thereby reducing generally possible wavelength dependent interference effects and, thus, a corresponding degradation of the outcoupling efficiency. The outcoupling efficiency can therefore be increased.

Abstract: An organic light emitting diode display includes a plurality of switches, a plurality of organic light emitting diodes respectively connected to the switches, and a polarization layer on the organic light emitting diodes. The polarization layer includes a light blocking area and a plurality of color filters. The light blocking area has a plurality of openings respectively exposing the organic light emitting diodes. The color filters respectively fill the openings. A first dot opening includes a first red opening, a first green opening, and a first blue opening elongated in a first direction. A second dot opening includes a second red opening, a second green opening, and a second blue opening elongated in a second direction crossing the first direction.

Abstract: An organic electronic device and a method of making an organic electronic device are provided. An embodiment of an electronic device includes a substrate, an active layer disposed on the substrate and a thin-layer encapsulation disposed on the active layer. The device further includes a first adhesive layer disposed on the thin-layer encapsulation, wherein the first adhesive layer comprises a getter material and a covering layer disposed on the first adhesive layer.

Abstract: A method of manufacturing a display device, the method including providing a first electrode on a base substrate; providing a fluorine-containing pixel defining layer on the base substrate and the first electrode such that the pixel defining layer exposes at least a portion of the first electrode; pretreating the first electrode; and providing an organic layer on the first electrode after pretreating the first electrode, wherein pretreating the first electrode includes performing a first treatment operation of treating an exposed surface of the first electrode using a first plasma gas; and performing a second treatment operation after performing the first treatment operation, the second treatment operation including treating the exposed surface of the first electrode using a second plasma gas, wherein the second plasma gas is different from the first plasma gas and includes hydrogen.

Abstract: Electrochemical device and method. The electrochemical device has an electrochemical module and an enclosure configured to enclose the electrochemical module. The enclosure has an electrically conductive first housing portion forming a first rim and an electrically conductive second housing portion forming a second rim, the first housing portion and the second housing portion, when the first rim of the first housing portion substantially abuts the second rim of the second housing portion, forming, at least in part, a volume configured to enclose the electrochemical device. The enclosure further has a substantially non-conductive grommet positioned between the first rim and the second rim, and a crimp ring engaging the first rim and the second rim, the crimp ring being configured to secure the first housing portion with respect to the second housing portion. The grommet is further positioned between the crimp ring and the first rim and the second rim.