Abstract: A solar cell includes a substrate of a first conductive type, an emitter layer, of a second conductive type opposite the first conductive type, positioned at one surface of the substrate, a first electrode electrically connected to the emitter layer, a first protective layer positioned on a front surface of the emitter layer where the first electrode is not positioned, a back surface field layer positioned at another surface of the substrate, a second electrode electrically connected to the back surface field layer, and a second protective layer positioned on a back surface of the substrate where the second electrode is not positioned. Each of the first and second protective layers is formed of a material having fixed charges of the first conductive type.

Abstract: A method of forming a photovoltaic device is provided that includes a p-n junction with a p-type semiconductor portion and an n-type semiconductor portion, wherein an upper exposed surface of one of the semiconductor portions represents a front side surface of the semiconductor substrate. Patterned antireflective coating layers are formed on the front side surface of the semiconductor surface to provide a grid pattern including a busbar region and finger region. A mask having a shape that mimics each patterned antireflective coating layer is provided atop each patterned antireflective coating layer. A metal layer is electrodeposited on the busbar region and the finger regions. After removing the mask, an anneal is performed that reacts metal atoms from the metal layer react with semiconductor atoms from the busbar region and the finger regions forming a metal semiconductor alloy.

Abstract: A solar cell according to an embodiment includes a semiconductor substrate; a first dopant layer formed at one surface of the semiconductor substrate; and a first electrode electrically connected to the first dopant layer. At least a part of the first dopant layer includes a pre-amorphization element, and a concentration of the pre-amorphization element in one portion of the first dopant layer is different from a concentration of the pre-amorphization element in another portion of the first dopant layer.

Abstract: A composition for solar cell electrodes includes a conductive powder, a glass frit, an organic vehicle and a thixotropic agent, and has a first thixotropic index (TI I) of about 1.5 to about 4 as represented by the following Equation 1, and a second thixotropic index (TI II) of about 4 to about 8 as represented by the following Equation 2, both the first thixotropic index and the second thixotropic index being measured at 23° C. by a rotary viscometer. [Equation 1] TI I=(viscosity at 1 rpm/viscosity at 10 rpm) [Equation 2] TI II=(viscosity at 10 rpm/viscosity at 100 rpm).

Abstract: A composition for solar cell electrodes includes a conductive powder, a glass frit, an organic vehicle and a thixotropic agent, and has a first thixotropic index (TI I) of about 1.5 to about 4 as represented by the following Equation 1, and a second thixotropic index (TI II) of about 4 to about 8 as represented by the following Equation 2, both the first thixotropic index and the second thixotropic index being measured at 23° C. by a rotary viscometer. [Equation 1] TI I=(viscosity at 1 rpm/viscosity at 10 rpm) [Equation 2] TI II=(viscosity at 10 rpm/viscosity at 100 rpm).

Abstract: In the solar cell module including a plurality of solar cells interconnected with wiring members, each of the solar cells includes a plurality of front-side finger electrodes that are disposed on a light-receiving surface of the solar cell and connected with tabs and a plurality of rear-side finger electrodes that are disposed on a rear surface of the solar cell and connected with tabs. Rear-side auxiliary electrode sections are arranged in regions, which is wider than the front-side finger electrodes, on the rear surface opposite to regions where the front-side finger electrodes are present.

Abstract: A solar cell according to an embodiment of the invention includes: a substrate; a dopant layer formed at the substrate; an electrode electrically connected to the dopant layer, wherein the electrode includes a plurality of finger electrodes that are parallel to each other; and a ribbon-connected portion formed on the dopant layer, wherein the ribbon-connected portion includes a non-conductive material. A portion of the plurality of finger electrodes is formed on the ribbon-connected portion.

Abstract: To improve the yield of a solar cell in its production process, a solar cell includes a semiconductor substrate including a first main surface and a second main surface corresponding to the backside of the first main surface, a busbar electrode on a line extending in a first direction on the second main surface, and end-portion electrodes each being an extension of the busbar electrode on the second main surface and separated from the busbar electrode, and each of the end-portion electrodes having a larger thickness than that of the busbar electrode.

Abstract: A photovoltaic device includes a substrate, a back contact comprising a stable low-work function material, a photovoltaic absorber material layer comprising Ag2ZnSn(S,Se)4 (AZTSSe) on a side of the back contact opposite the substrate, wherein the back contact forms an Ohmic contact with the photovoltaic absorber material layer, a buffer layer or Schottky contact layer on a side of the absorber layer opposite the back contact, and a top electrode on a side of the buffer layer opposite the absorber layer.

Abstract: Optoelectronic modules for light emitting and/or light sensing include optical assemblies and active optoelectronic components. An optical assembly and a corresponding optoelectronic component can be aligned. The optoelectronic modules can include multiple optical assemblies and active optoelectronic components. Multiple optical assemblies and corresponding active optoelectronic components can be aligned independently of each other in various implementations of optoelectronic modules that include alignment features and optical assembly barrels.

Abstract: The composition for forming an n-type diffusion layer in accordance with the present invention contains a glass powder and a dispersion medium, in which the glass powder includes an donor element and a total amount of the life time killer element in the glass powder is 1000 ppm or less. An n-type diffusion layer and a photovoltaic cell having an n-type diffusion layer are prepared by applying the composition for forming an n-type diffusion layer, followed by a thermal diffusion treatment.

Abstract: In one aspect of the present invention, a photovoltaic device is provided. The photovoltaic device includes a window layer and an absorber layer disposed on the window layer, wherein the absorber layer includes a first region and a second region, the first region disposed adjacent to the window layer. The absorber layer further includes a first additive and a second additive, wherein a concentration of the first additive in the first region is greater than a concentration of the first additive in the second region, and wherein a concentration of the second additive in the second region is greater than a concentration of the second additive in the first region. Method of making a photovoltaic device is also provided.

Abstract: The present invention provides materials, structures, and methods for III-nitride-based devices, including epitaxial and non-epitaxial structures useful for III-nitride devices including light emitting devices, laser diodes, transistors, detectors, sensors, and the like. In some embodiments, the present invention provides metallo-semiconductor and/or metallo-dielectric devices, structures, materials and methods of forming metallo-semiconductor and/or metallo-dielectric material structures for use in semiconductor devices, and more particularly for use in III-nitride based semiconductor devices. In some embodiments, the present invention includes materials, structures, and methods for improving the crystal quality of epitaxial materials grown on non-native substrates.

Abstract: A composition of matter and method of forming copper indium gallium sulfide (CIGS), copper indium gallium selenide (CIGSe), or copper indium gallium telluride thin film via conversion of layer-by-layer (LbL) assembled Cu—In—Ga oxide (CIGO) nanoparticles and polyelectrolytes. CIGO nanoparticles are created via a flame-spray pyrolysis method using metal nitrate precursors, subsequently coated with polyallylamine (PAH), and dispersed in aqueous solution. Multilayer films are assembled by alternately dipping a substrate into a solution of either polydopamine (PDA) or polystyrenesulfonate (PSS) and then in the CIGO-PAH dispersion to fabricate films as thick as 1-2 microns. After LbL deposition, films are oxidized to remove polymer and sulfurized, selenized, or tellurinized to convert CIGO to CIGS, CIGSe, or copper indium gallium telluride.

Abstract: A photoconductor includes a first semiconductor layer, a second semiconductor layer disposed on the first semiconductor layer, a first electrode connected to a first lateral side of the first semiconductor layer and the second semiconductor layer, and a second electrode connected to a second lateral side of the first semiconductor layer and the second semiconductor layer, where the first semiconductor layer and the second semiconductor layer form a type II junction or a quasi-type-II junction.

Abstract: A method for producing a semiconductor element includes a step of forming a multiple quantum well in which a GaSb layer and an InAs layer are alternately stacked on a GaSb substrate by MOVPE, wherein, in the step of forming a multiple quantum well, an InSb film is formed on at least one of a lower-surface side and an upper-surface side of the InAs layer so as to be in contact with the InAs layer.

Abstract: This solar cell module (1) comprises a plurality of solar cell arrays (11). Each solar cell array (11) includes a plurality of spherical semiconductor elements (20) arranged in a row, at least a pair of bypass diodes (40), and a pair of lead members (14) that connect the plurality of spherical semiconductor elements (20) and the plurality of bypass diodes (40) in parallel. Each of the lead members (14) includes one or plural lead strings (15) to which the plurality of spherical semiconductor elements (20) are electrically connected and having a width less than or equal to the radius of the spherical semiconductor element (20), and plural lead pieces (16) formed integrally with the lead strings (15) at least at both end portions of the lead member (14), on which the bypass diodes (40) are electrically connected in reverse parallel to the spherical semiconductor elements (20), and having width larger than or equal to the width of the bypass diodes (40).

Abstract: A photoelectric converting apparatus has first and third semiconductor layers of a first conductivity type which respectively output signals obtained by photoelectric conversion, and second and fourth semiconductor layers of a second conductivity type supplied with potentials from a potential supplying unit. In the photoelectric converting apparatus, the first, second, third and fourth semiconductor layers are arranged in sequence, the second and fourth semiconductor layers are electrically separated from each other, and the potential to be supplied to the second semiconductor layer and the potential to be supplied to the fourth semiconductor layer are controlled independently from each other.

Abstract: A solar shield can include a body and at least one fastening feature. The body can have a length and a width, where each of the length and the width is at least large enough to cover a top surface of at least one of a number of PV solar panels. The at least one fastening feature can be mechanically coupled to the body. The at least one fastening feature, when enabled, secures the body to the top surface of the at least one of the plurality of PV solar panels. The body can be rigid or flexible. The at least one fastening feature can be, at least, a clip, a clamp, or a strap.

Abstract: The present invention relates to a solar cell encapsulant sheet comprising at least one ethylene-based resin selected from the group consisting of an ethylene-?-olefin copolymer, an ethylene homopolymer and an ethylene-unsaturated ester copolymer, 0.001 parts by mass to 5 parts by mass of at least one compound selected from the group consisting of silicon dioxide and zeolite, and 0.001 parts by mass to 5 parts by mass of a silane coupling agent, relative to 100 parts by mass of the ethylene-based resin respectively.

Abstract: The invention concerns a multilayer biaxially oriented white polyester film (adhesion, absence of chalking, opacity whiteness, reflectance, hydrolysis resistance & light stability) comprising three polyester layers: a core layer and two outer layers and contains TiO2 particles. In this film: at least one layer comprises a PET whose: number average molecular weight is within [18500-40000]; intrinsic viscosity IV is ?0.70 dL/g; and carboxyl group content is ?30 eq/T. Additionally, the core layer comprises TiO2 particles in a range of [0.1-40]% w/w; the intrinsic viscosity IV is between [0.5-0.85] dL/g; a small endothermic peak temperature is between 180-230° C.; and at least one light stabilizer is added in at least one of the outer layers, in a total concentration between [0.1-35]% w/w. The invention also includes the method for manufacturing such film and the laminate which is part of the back sheet of a solar cell.

Abstract: A solar cell module is discussed. The solar cell module includes a plurality of solar cells each including a plurality of first current collectors and a plurality of second current collectors, a first protective layer positioned on incident surfaces of the solar cells, a transparent member positioned on the first protective layer, and a conductive pattern part positioned on non-incident surfaces of the plurality of solar cells. The conductive pattern part includes a first pattern having a plurality of first protrusions connected to first current collectors of one solar cell and a second pattern having a plurality of second protrusions connected to second current collectors of the one solar cell. The plurality of first current collectors and the plurality of second current collectors are positioned on a surface of each solar cell on which light is not incident.

Abstract: The invention includes a parabolic solar concentrator typified by a highly integrated structure whereby, mirror, aerodynamic elements, a shell structure, cooling elements and other elements have been integrated to form a unibody structure, which is both stiffer and lighter than traditional trough structures. The invention includes; aerodynamic features that greatly limit lift forces induced by high speed winds, a receiver with liquid cooling for better control of PV cell temperatures and which allows for the collection of the heat for beneficial use, accommodations for a solar tracker, and improvements in the focusing and distribution of light using secondary mirrors. The receiver incorporates specific details to improve heat transfer and reduce parasitic pumping loads and incorporates secondary mirrors to increase light acceptance angles. Automated mirror washing is addressed.

Abstract: The present disclosure provides a method of fabricating a solar cell panel in an automated process by applying an adhesive pattern to a support, positioning a solar cell assembly over the pattern, and applying pressure to adhere the assembly to the support.

Abstract: A radiation detector (10) includes a semiconductor element (1) for generating positive holes and electrons, a cathode (2) formed on a first surface of the semiconductor element (1) and a plurality of segmented anodes (3) formed on a second surface of the semiconductor element (1), the second surface being in opposed relation to the first surface. Additionally, a plurality of segmented steering electrodes (5a) are positioned adjacent the plurality of segmented anodes (3). Moreover, a plurality of doping atoms are located above at least a portion of the plurality of segmented anodes (3) for reducing the voltage difference between the plurality of segmented anodes (3) and the plurality of segmented steering electrodes (5a).

Abstract: A method for fabricating a semiconductor proximity sensor includes providing a flat leadframe with a first and a second surface. The second surface is solderable. The leadframe includes a first and a second pad, a plurality of leads, and fingers framing the first pad. The fingers are spaced from the first pad by a gap which is filled with a clear molding compound. A light-emitting diode (LED) chip is assembled on the first pad and encapsulated by a first volume of the clear compound. The first volume outlined as a first lens. A sensor chip is assembled on the second pad and encapsulated by a second volume of the clear compound. The second volume outlined as a second lens. Opaque molding compound fills the space between the first and second volumes of clear compound and forms walls rising from the frame of fingers to create an enclosed cavity for the LED. The pads, leads, and fingers connected to a board using a layer of solder for attaching the proximity sensor.

Abstract: A method of making a germanium perovskite/crystalline germanium thin-film tandem solar cell including the steps of depositing a textured oxide buffer layer on glass, depositing a Sn—Ge film from a eutectic alloy on the buffer layer; and depositing perovskite elements on the Sn—Ge film, thus forming a perovskite layer based on the Ge from the Sn—Ge film, incorporating the Ge into the perovskite layer.

Abstract: After forming patterned dielectric material structures over a (100) silicon substrate, portions of the silicon substrate that are not covered by the patterned dielectric material structures are removed to provide a plurality of openings within the silicon substrate. Each opening exposes a surface of the silicon substrate having a (111) crystalline plane. A buffer layer is then formed on the exposed surfaces of the patterned dielectric material structures and the silicon substrate. A dual phase Group III nitride structure including a cubic phase region is formed filling a space between each neighboring pair of the patterned dielectric material structures and one of the openings located beneath the space. Finally, at least one Group III nitride layer is epitaxially deposited over the cubic phase region of the dual phase Group III nitride structure.

Abstract: A semiconductor light-emitting device including an N-type semiconductor layer, a plurality of P-type semiconductor layers, a light-emitting layer, and a contact layer is provided. The light-emitting layer is disposed between the N-type semiconductor layer and the whole of the P-type semiconductor layers. The P-type semiconductor layers are disposed between the contact layer and the light-emitting layer. All the P-type semiconductor layers between the light-emitting layer and the contact layer include aluminum.

Abstract: A light-emitting device comprises a substrate having a top surface and a plurality of patterned units protruding from the top surface; and a light-emitting stack formed on the substrate and having an active layer with a first surface substantially parallel to the top surface; wherein one of the plurality of patterned units has a vertex, a first inclined surface, and a second inclined surface, and the first inclined surface and the second inclined surface commonly join at the vertex from a cross-sectional view of the light-emitting device.

Abstract: A nano-structure semiconductor light emitting device includes a base layer formed of a first conductivity type semiconductor, and a first insulating layer disposed on the base layer and having a plurality of first openings exposing partial regions of the base layer. A plurality of nanocores is disposed in the exposed regions of the base layer and formed of the first conductivity-type semiconductor. An active layer is disposed on surfaces of the plurality of nanocores and positioned above the first insulating layer. A second insulating layer is disposed on the first insulating layer and has a plurality of second openings surrounding the plurality of nanocores and the active layer disposed on the surfaces of the plurality of nanocores. A second conductivity-type semiconductor layer is disposed on the surface of the active layer positioned to be above the second insulating layer.

Abstract: A method of fabricating a light emitting diode (LED) includes: sequentially stacking a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer on a substrate; and separating the substrate into unit chips, and at the same time, forming a concavo-convex structure having the shape of irregular vertical lines in a side surface of the unit chip.

Abstract: A method of forming an ohmic contact for a semiconductor device can be provided by thinning a substrate to provide a reduced thickness substrate and providing a metal on the reduced thickness substrate. Laser annealing can be performed at a location of the metal and the reduced thickness substrate at an energy level to form a metal-substrate material to provide the ohmic contact thereat.

Abstract: A light emitting device uses an Ag wire and exhibits excellent light extraction efficiency. In the light emitting device, a pad electrode of a light emitting element and a mount electrode are connected to each other using an Ag wire. The pad electrode contains Pt in a region where the Ag wire is bonded.

Abstract: Exemplary embodiments provide a light emitting diode that includes: at least one lower electrode providing a passage for electric current; a light emitting structure placed over the at least one lower electrode to be electrically connected to the lower electrode, the light emitting structure is disposed to form at least one via-hole; a reflective electrode layer placed between the at least one lower electrode and the light emitting structure; and an electrode pattern formed around the light emitting structure and electrically connecting the lower electrode to the light emitting structure through the via-hole.

Abstract: A semiconductor light-emitting device is provided. The semiconductor light-emitting device may include a light-emitting structure, an electrode, an ohmic layer, an electrode layer, an adhesion layer, and a channel layer. The light-emitting structure may include a compound semiconductor layer. The electrode may be disposed on the light-emitting structure. The ohmic layer may be disposed under the light-emitting structure. The electrode layer may include a reflective metal under the ohmic layer. The adhesion layer may be disposed under the electrode layer. The channel layer may be disposed along a bottom edge of the light-emitting structure.

Abstract: A method of manufacturing a semiconductor light emitting element includes providing a semiconductor stacked layer body; forming an insulating layer on a portion of the semiconductor stacked layer body; forming a light-transmissive electrode covering an upper surface of the semiconductor stacked layer body and an upper surface of the insulating layer, and on a region at least partially overlapping a region for disposing an extending portion in a plan view; forming a light reflecting layer in each of the openings of the light-transmissive electrode; forming a protective layer on a main surface side of the semiconductor stacked layer body; forming a mask on an upper surface of the protective layer except for the region for forming the pad electrode; etching the protective layer to form an opening in the protective layer; and forming a pad electrode in the opening of the protective layer.

Abstract: A light-emitting diode is provided to include: a transparent substrate having a first surface, a second surface, and a side surface; a first conductive semiconductor layer positioned on the first surface of the transparent substrate; a second conductive semiconductor layer positioned on the first conductive semiconductor layer; an active layer positioned between the first conductive semiconductor layer and the second conductive semiconductor layer; a first pad electrically connected to the first conductive semiconductor layer; and a second pad electrically connected to the second conductive semiconductor layer, wherein the transparent substrate is configured to discharge light generated by the active layer through the second surface of the transparent substrate, and the light-emitting diode has a beam angle of at least 140 degrees or more. Accordingly, a light-emitting diode suitable for a backlight unit or a surface lighting apparatus can be provided.

Abstract: In at least one embodiment, the optoelectronic semiconductor component contains at least one chip support having electrical contact devices and also at least one optoelectronic semiconductor chip that is set up to produce radiation and that is mechanically and electrically mounted on the chip support. A component support is attached to the chip support. The semiconductor chip is situated in a recess in the component support. The component support is electrically insulated from the chip support and from the semiconductor chip. The component support is formed from a metal or from a metal alloy. On a top that is remote from the chip support, the component support is provided with a reflective coating.

Abstract: The invention relates to reducing effect of light that is emitted from a light-emitting element and then enters between a base and a frame member. A light-emitting device (1) includes a base (11), a frame member (12) and a light-emitting element (13). The light-emitting device (1) further includes an intervening layer (14). The frame member (12) is disposed on the base (11). The light-emitting element (13) is made of a semiconductor material. The light-emitting element (13) is disposed in a region defined by the frame member (12), and mounted on the base (11). The intervening layer (14) contains a plurality of light transmitting particles (14-2) and is disposed between the base (11) and the frame member (12).

Abstract: [PROBLEM TO BE SOLVED] To provide a method and apparatus for applying a coating material that reacts at ordinary temperatures and increases in viscosity with lapse of time or a coating material that is difficult to handle, such as an unstable slurry in which sedimentation occurs at high rate, to a high-value-added object to be coated. [SOLUTION] Before at least applying coating material to an object to be coated, the coating amount is automatically measured using a highly-accurate measuring device set in an atmosphere that does not substantially affect the measurement to control the coating amount during production. Therefore, high-quality products can be mass-produced with a low production cost.

Abstract: A light-emitting device is specified, said device comprising: a light-emitting semiconductor element (23) which emits greenish white light (10) during operation of the device, a filter element (4) which has a higher optical transmittance (11) in a spectral region of red light than in a spectral region of blue and green light, wherein the filter element (4) is arranged in such a way with respect to the light-emitting semiconductor element (23) that solely filtered light (12) which passes through the filter element (4) is emitted by the device during operation of the device, and the filtered light (12) is warm-white light.

Abstract: Provided are a light emitting device package in which lens tilting is prevented to reduce luminance and color deviations and a backlight unit having the same. The light emitting device package includes an encapsulation material disposed on a substrate to surround a light emitting device and a guide member disposed on the encapsulation material to guide an assembly path of a lens. The guide member includes a first inclined surface having a first inclination to guide a light incident part of the lens and a second inclined surface having a second inclination greater than the first inclination to further guide the light incident part of the lens.

Abstract: The present invention relates to a semiconductor light emitting device including: a substrate for element mounting; a wiring provided on the substrate; an LED element provided on the substrate and electrically connected to the wiring; an encapsulating resin layer for encapsulating the LED element; and a wavelength conversion layer which contains a phosphor material and converts a wavelength of light emitted by the LED element, in which the wavelength conversion layer is provided on an upper side of the LED element, and a diffusive reflection resin layer is provided in a state that side faces of the LED element are surrounded therewith, and an area at the LED element face side of the wavelength conversion layer is at least twice larger by area ratio than an area of light emitting area on an upper surface of the LED element.

Abstract: Disclosed is a SMD type LED package device, a method for manufacturing the same, and a light-emitting apparatus, wherein the surface-mount-device (SMD) type light-emitting diode (LED) package device comprises an assembly of an LED chip, two metal supporting frames, and a packaging body. The two metal supporting frames of the assembly are spaced apart from each other and disposed in parallel along the first axis. Each metal supporting frame has a first end electrically connected to the LED chip and a second end opposite to the first end. The packaging body has a lens portion and a supporting portion, which is integrally formed with the packaging body and covers the LED chip and the first ends of the metal supporting frames.

Abstract: A light emitting device comprises a package having a recess; a light emitting element mounted in the recess of the package; a light transmissive member provided above the light emitting element; a sealing resin that seals the recess of the package; and a fluorescent material contained in the sealing resin. The fluorescent material is distributed to a side of the light emitting element in a greater amount than to above the light emitting element, a side surface of the light emitting element is exposed to the sealing resin, and a portion of the light transmissive member protrudes from the sealing resin.

Abstract: Opto-electronic modules include masking features that can help reduce the visibility of interior components or enhance the outer appearance of the module or of an appliance incorporating the module as a component. The modules can include an optical diode or saturable optical absorber.

Abstract: Provided is a light emitting device that reduces color unevenness between a plurality of light emitting elements. A light emitting device 1 includes a base substrate 10, a first frame body 11 disposed at an upper surface 10a of the base substrate 10, and a second frame body 12 disposed at the upper surface 10a of the base substrate 10 and surrounding the first frame body 11 while being spaced away from the first frame body 11. A plurality of light emitting elements 2 is disposed within a region surrounded by the first frame body 11. A first sealing resin 21 is disposed within the region surrounded by the first frame body 11 to cover the light emitting elements 2. The first sealing resin 21 includes a wavelength conversion member that converts a wavelength of light emitted from the light emitting elements 2. A second sealing resin 22 is disposed within the region surrounded by the second frame body 12 to cover the first sealing resin 21.

Abstract: An optical semiconductor element mounting package that has good adhesion between the resin molding and the lead electrodes and has excellent reliability is provided, as well as an optical semiconductor device using the package is also provided. The optical semiconductor element mounting package having a recessed part that serves as an optical semiconductor element mounting region, wherein the package is formed by integrating: a resin molding composed of a thermosetting light-reflecting resin composition, which forms at least the side faces of the recessed part; and at least a pair of positive and negative lead electrodes disposed opposite each other so as to form part of the bottom face of the recessed part, and there is no gap at a joint face between the resin molding and the lead electrodes.

Abstract: A composition and method for formation of ohmic contacts on a semiconductor structure are provided. The composition includes a TiAlxNy material at least partially contiguous with the semiconductor structure. The TiAlxNy material can be TiAl3. The composition can include an aluminum material, the aluminum material being contiguous to at least part of the TiAlxNy material, such that the TiAlxNy material is between the aluminum material and the semiconductor structure. The method includes annealing the composition to form an ohmic contact on the semiconductor structure.