Abstract: Disclosed are a light emitting diode and a light emitting diode module. The light emitting diode module includes a printed circuit board and a light emitting diode joined thereto through a solder paste. The light emitting diode includes a first electrode pad electrically connected to a first conductive type semiconductor layer and a second electrode pad connected to a second conductive type semiconductor layer, wherein each of the first electrode pad and the second electrode pad includes at least five pairs of Ti/Ni layers or at least five pairs of Ti/Cr layers and the uppermost layer of Au. Thus a metal element such as Sn in the solder paste is prevented from diffusion so as to provide a reliable light emitting diode module.

Abstract: A semiconductor light-emitting device (101) includes an LED chip (4), a lead (1) having a main surface (11) on which the LED chip (4) is mounted, and a resin package (5) covering the LED chip (4). The main surface (11) is roughened, and the main surface (11) is held in contact with the resin package (5). These configurations contribute to the downsizing of the semiconductor light-emitting device (101).

Abstract: A method includes preparing a thermoelectric material including p-type or n-type material and first and second caps including transition metal(s). A powder precursor of the first cap can be loaded into a sintering die, punches assembled thereto, and a pre-load applied to form a first pre-pressed structure including a first flat surface. A punch can be removed, a powder precursor of the p-type or n-type material loaded onto that surface, the punch assembled to the die, and a second pre-load applied to form a second pre-pressed structure including a second substantially flat surface. The punch can be removed, a powder precursor of the second cap loaded onto that surface, the first punch assembled to the die, and a third pre-load applied to form a third pre-pressed structure. The third pre-pressed structure can be sintered to form the thermoelectric material; the first or second cap can be coupled to an electrical connector.

Abstract: A thermoelectric generator unit according to this disclosure includes a plurality of tubular thermoelectric generators, each of which generates electromotive force based on a difference in temperature between the inner and outer peripheral surfaces. The unit further includes a plurality of electrically conductive members providing electrical connection for the generators and a container housing the generators inside. The container includes a shell surrounding the generators and a pair of plates, at least one of which has a plurality of openings and channels. Each channel houses an electrically conductive member. The generators are electrically connected together in series via the electrically conductive member. At least one of the channels has an interconnection which connects at least two of the openings together and a testing hole portion. The testing hole portion runs from the interconnection through an outer edge of the at least one plate.

Abstract: The invention provides a thermoelectric conversion material having a low thermal conductivity and an improved figure of merit and a production method for the material, and also provides a thermoelectric conversion module. The thermoelectric conversion material has, on a porous substrate having microscopic pores, a thermoelectric semiconductor layer formed of a thermoelectric semiconductor material, wherein the porous substrate has a polymer layer (B) on a plastic film (A) and the microscopic pores are formed in the polymer layer (B) and in a part of the plastic film (A). The production method for the thermoelectric conversion material comprises a substrate formation step of forming a porous substrate including a step 1, a step 2 and a step 3, and comprises a film formation step of forming a thermoelectric semiconductor layer through film formation of a thermoelectric semiconductor material on the porous substrate. The thermoelectric conversion module uses the thermoelectric conversion material.

Abstract: A superconducting thin film having excellent critical current characteristics is provided. A substrate for a superconducting thin film includes a substrate body (10A) having a main surface (10B) in which the root mean square slope R?q of a roughness curve is 0.4 or less.

Abstract: An acoustic resonator device comprises: a substrate comprising a cavity or an acoustic mirror; a first electrode disposed over the substrate; a piezoelectric layer disposed over the first electrode; and a second electrode disposed over the piezoelectric layer. The first electrode or the second electrode, or both, are made of an electrically conductive material having a positive temperature coefficient.

Abstract: An acoustic wave device includes: a piezoelectric substrate of which four sides of an upper surface are approximate cleavage directions; and an electrode that is formed on the upper surface of the piezoelectric substrate, and excites an acoustic wave propagating in a direction different from the approximate cleavage directions.

Abstract: A plurality of piezoelectric device corresponding parts including a green main body part and a green top surface electrode formed on a top surface of the green main body part are placed on a tabular substrate at intervals. Next, a tabular elastic body is pressed from above to the plurality of piezoelectric device corresponding parts, so as to form an inclined part declined toward an outer side in an edge of a top surface of each piezoelectric device corresponding part, and to form a circular arc part at an intersection between the inclined part and a side surface of the piezoelectric device corresponding part. Next, a green side surface electrode is formed on the side surface of each piezoelectric device corresponding part so that the green side surface electrode is connected to the green top surface electrode. Next, this molded body is sintered so that a piezoelectric device is obtained.

Abstract: A device includes creating an opening in a dielectric layer that is disposed over a bottom electrode layer. A top electrode layer is disposed over the dielectric layer. A magnetic tunnel junction (MTJ) layer is formed in the opening over the bottom electrode layer.

Abstract: Provided is an information storage element comprising a first layer, an insulation layer coupled to the first layer, and a second layer coupled to the insulation layer opposite the first layer. The first layer is capable of storing information according to a magnetization state of a magnetic material. The insulation layer includes a non-magnetic material. The second layer includes a fixed magnetization. In an embodiment, the first layer has a transverse length that is approximately 45 nm or less and a volume that is approximately 2,390 nm3 or less. In a further embodiment, the second layer includes MgO and is capable of allowing electrons passing through the second layer reach the first layer before the electrons enter a non-polarized state.

Abstract: A magnetic cell includes an attracter material proximate to a magnetic region (e.g., a free region). The attracter material is formulated to have a higher chemical affinity for a diffusible species of a magnetic material, from which the magnetic region is formed, compared to a chemical affinity between the diffusible species and at least another species of the magnetic material. Thus, the diffusible species is removed from the magnetic material to the attracter material. The removal accommodates crystallization of the depleted magnetic material. The crystallized, depleted magnetic material enables a high tunnel magnetoresistance, high energy barrier, and high energy barrier ratio. The magnetic region may be formed as a continuous magnetic material, thus enabling a high exchange stiffness, and positioning the magnetic region between two magnetic anisotropy-inducing oxide regions enables a high magnetic anisotropy strength. Methods of fabrication and semiconductor devices are also disclosed.

Abstract: The output voltage of an MRAM is increased by means of an Fe(001)/MgO(001)/Fe(001) MTJ device, which is formed by microfabrication of a sample prepared as follows: A single-crystalline MgO (001) substrate is prepared. An epitaxial Fe(001) lower electrode (a first electrode) is grown on a MgO(001) seed layer at room temperature, followed by annealing under ultrahigh vacuum. A MgO(001) barrier layer is epitaxially formed on the Fe(001) lower electrode (the first electrode) at room temperature, using a MgO electron-beam evaporation. A Fe(001) upper electrode (a second electrode) is then formed on the MgO(001) barrier layer at room temperature. This is successively followed by the deposition of a Co layer on the Fe(001) upper electrode (the second electrode). The Co layer is provided so as to increase the coercive force of the upper electrode in order to realize an antiparallel magnetization alignment.

Abstract: According to one embodiment, a magnetic memory device includes a stack structure including a first magnetic layer variable in magnetization direction, a second magnetic layer fixed in magnetization direction, and a nonmagnetic layer between the first magnetic layer and the second magnetic layer, the first magnetic layer including a first layer, a second layer, and a third layer between the first layer and the second layer and containing magnesium (Mg), iron (Fe), and oxygen (O), the second layer being between the nonmagnetic layer and the third layer, wherein a thickness of the second layer is greater than that of the first layer, and the thickness of the first layer is greater than that of the third layer.

Abstract: A hard mask stack for etching a magnetic tunneling junction (MTJ) structure is described. The hard mask stack is formed on a stack of MTJ layers on a bottom electrode and comprises an electrode layer on the MTJ stack, a buffer metal layer on the electrode layer, a metal hard mask layer on the buffer metal layer, and a dielectric layer on the metal hard mask layer wherein a dielectric mask is defined in the dielectric layer by a photoresist mask, a metal hard mask is defined in the metal hard mask layer by the dielectric mask, a buffer metal mask is defined in the buffer metal layer by the metal hard mask, an electrode mask is defined in the electrode layer by the buffer metal mask, and the MTJ structure is defined by the electrode mask wherein the electrode mask remaining acts as a top electrode.

Abstract: In one embodiment, a method of forming a current sensor device includes forming a device region comprising a magnetic sensor within and/or over a semiconductor substrate. The device region is formed adjacent a front side of the semiconductor substrate. The back side of the semiconductor substrate is attached over an insulating substrate, where the back side is opposite the front side. Sidewalls of the semiconductor substrate are exposed by dicing the semiconductor substrate from the front side without completely dicing the insulating substrate. An isolation liner is formed over all of the exposed sidewalls of the semiconductor substrate. The isolation liner and the insulating substrate include a different material. The method further includes separating the insulating substrate to form diced chips, removing at least a portion of the isolation liner from over a top surface of the device region, and forming contacts over the top surface of the device region.

Abstract: Embodiments of the present disclosure are directed towards techniques to provide structural integrity for a memory device comprising a memory array. In one embodiment, the device may comprise a memory array having at least a plurality of wordlines disposed in a memory region of a die, and a first fill layer deposited between adjacent wordlines of the plurality of wordlines in the memory region, to provide structural integrity for the memory array. At least a portion of a periphery region of the die adjacent to the memory region may be substantially filled with a second fill layer that is different than the first fill layer. Other embodiments may be described and/or claimed.

Abstract: A method for manufacturing a memory device of an embodiment includes: forming on a substrate a block copolymer layer which contains a first polymer and a second polymer having lower surface energy than that of the first polymer; performing thermal treatment on the block copolymer layer, to separate the block copolymer layer such that a first phase containing the first polymer and extending in the first direction and a second phase containing the second polymer and extending in the first direction are alternately arrayed; selectively forming on the first phase a first metal wiring layer extending in the first direction; forming on the first metal wiring layer a memory layer where resistance changes by application of a voltage; and forming on the memory layer a second metal wiring layer which extends in a second direction intersecting in the first direction.

Abstract: The present disclosure provides a semiconductor structure which includes a conductive layer and a resistance configurable structure over the conductive layer. The resistance configurable structure includes a first electrode, a resistance configurable layer over the first electrode, and a second electrode over the resistance configurable layer. The first electrode has a first sidewall, a second sidewall, and a bottom surface on the conductive layer. A joint between the first sidewall and the second sidewall includes an electric field enhancement structure. The present disclosure also provides a method for manufacturing the above semiconductor structure, including patterning a hard mask on a conductive layer; forming a spacer around the hard mask; removing at least a portion of the hard mask; forming a conforming resistance configurable layer on the spacer; and forming a second conductive layer on the conforming resistance configurable layer.

Abstract: The present invention provides an organic light emitting device comprising a first electrode, at least one organic layer and a second electrode, laminated successively, in which at least one layer of the organic layer has a polycyclic aromatic hydrocarbon as a core and comprises at least one of a derivative in which a substituted or unsubstituted C2-30 cycloalkane, or a substituted or unsubstituted C5-50 polycycloalkane is directly fused to the core or fused to a substituent of the core; and a new organic compound usable in the organic light emitting device. Furthermore, the present invention provides a charge carrier extracting, injecting or transporting material which has a polycyclic aromatic hydrocarbon as a core and comprises a derivative in which a substituted or unsubstituted C2-30 cycloalkane, or a substituted or unsubstituted C5-50 polycycloalkane is directly fused to the core or fused to a substituent of the core.

Abstract: Disclosed is an organic electroluminescent device including an anode, a cathode, and an emissive layer between the anode and the cathode, the emissive layer including a phosphorescent material and a compound having a repeat unit that contains a novel triphenylene moiety. A preferred group of the novel triphenylene moiety are triphenylenes that are substituted with a non-fused aryl group having one or more meta-substituents, where each meta-substituent is a non-fused aryl group optionally substituted with further substituents selected from the group consisting of non-fused aryl groups and alkyl groups. A further preferred group of compounds are triphenylenes that are substituted with a non-fused heteroaryl group having one or more meta-substituents, where each meta-substituent is a non-fused aryl or heteroaryl group optionally substituted with further substituents selected from the group consisting of non-fused aryl groups, non-fused heteroaryl groups, and alkyl groups.

Abstract: An organic electroluminescence element that uses a compound expressed by the following general formula has low inter-molecular interaction and high orientation during vapor deposition, and by using compounds that are resistant to aggregation, luminous efficiency is high, and there is little change in chromaticity accompanying drive deterioration (either V1 or W1 and either V2 or W2 form rings, the rings formed by V1 and V2 are six-membered rings, and the rings formed by W1 and W2 are five-membered rings; A2 to A4 and A6 to A8 represent CRZ or N, and RZ represents a hydrogen atom or a substituent; and R2, R3, R7, and R8 represent a hydrogen atom, an alkyl group, an aryl group, a heteroaryl group, a fluorine atom, a hydrogen atom [sic], or a deuterium atom.).

Abstract: The present invention relates to a compound of a formula (I), (II) or (III), to the use of this compound in an electronic device, and to an electronic device comprising one or more compounds of the formula (I), (II) or (III). The invention furthermore relates to a process for the preparation of a compound of the formula (I), (II) or (III) and to a formulation comprising one or more compounds of the formula (I), (II) or (III).

Abstract: An organic EL device includes a pair of electrodes and an organic compound layer between pair of electrodes. The organic compound layer includes an emitting layer including a first material, a second material and a third material, in which singlet energy EgS(H) of the first material, singlet energy EgS(H2) of the second material, and singlet energy EgS(D) of the third material satisfy a specific relationship.

Abstract: Discussed is an organic electroluminescent device including a first charge carrying layer being disposed adjacent to a first electrode; and a second charge carrying layer disposed adjacent to a second electrode, wherein the first charge carrying layer includes an emitting part, a hole injection part and a hole transporting part between the hole injection part and the emitting part, wherein at least one of the hole injection part, the hole transporting part and the emitting part includes a host material having an organic compound of Formula: wherein R is substituted or non-substituted C1 to C12 alkyl, and A and B are symmetrically or asymmetrically positioned in 2-position or 7-position of the fluorene core, and wherein each of A and B is independently selected from substituted or non-substituted aromatic group or substituted or non-substituted heterocyclic group.

Abstract: A heterocyclic compound and an organic light-emitting diode including the same, the heterocyclic compound being represented by Formula 1 below:

Abstract: Organic photoelectric devices, image sensors, and electronic device, include a first electrode and a second electrode facing each other, and an active layer between the first electrode and the second electrode, wherein the active layer includes a p-type semiconductor compound including a squaraine derivative and an n-type semiconductor compound represented by Chemical Formula 1.

Abstract: A method for manufacturing a functional material including a porous metal complex with nanoparticles included therein, the method including a configuration of adding more than one particle constituent raw material constituting the nanoparticles and a porous metal complex to a solvent, and then synthesizing nanoparticles included in the porous metal complex by heating to a desired temperature. In addition, provided is an electronic component including an electronic component element using a functional material including a porous metal complex with nanoparticles included therein.

Abstract: Provided are an integrated conductive substrate simultaneously serving as a substrate and an electrode, and an electronic device using the same. The integrated conductive substrate includes a metal layer composed of a non-ferrous metal, which has a first surface having a first root mean square roughness, and a semiconductor layer containing a semiconductor material, which has a second surface having a second root mean square roughness and is formed on the first surface. Here, the semiconductor layer includes a semiconductor-type planarization layer formed by a solution process using at least one of the semiconductor material and a precursor of the semiconductor material to planarize the first surface of the metal layer, and the second root mean square roughness is smaller than the first root mean square roughness.

Abstract: Disclosed herein is a display apparatus, including: a foldable substrate; a pixel array section including a plurality of pixels disposed on the substrate and each including an electro-optical device; the foldable substrate being folded at a substrate end portion at least on one side thereof around the pixel array section; a peripheral circuit section disposed on the substrate end portion and adapted to drive the pixels of the pixel array section; and a pad section provided on the substrate end portion on which the peripheral circuit section is provided and adapted to electrically connect the peripheral circuit section to the outside of the substrate.

Abstract: A flexible display device includes a flexible substrate including a display region and a peripheral region substantially surrounding the display region, the display region including a first display region and a second display region, a first display structure at the first display region of the flexible substrate, the first display structure including nanoparticles, and a second display structure at the second display region of the flexible substrate, the second display structure including silicon.

Abstract: The present invention provides a transistor element having a laminated structure, the laminated structure comprising a sheet-like base electrode being arranged between an emitter electrode and a collector electrode; at least one p-type organic semiconductor layer being provided on each of the surface and the back sides of the base electrode; and a current transmission promotion layer being formed, on each of the surface and back sides of the base electrode, between the base electrode and the p-type organic semiconductor layer or layers provided on each of the surface and back sides of the base electrode. According to the present invention, it becomes possible to provide a transistor element (MBOT) that is, in particular, stably supplied through a simple production process, has a structure capable of being mass-produced, and has a large current modulation effect and an excellent ON/OFF ratio at a low voltage in the emitter electrode and the collector electrode.

Abstract: An N-type thin film transistor includes an insulating substrate, a semiconductor carbon nanotube layer, an MgO layer, a functional dielectric layer, a source electrode, a drain electrode, and a gate electrode. The semiconductor carbon nanotube layer is located on the insulating substrate. The source electrode and the drain electrode electrically connect the semiconductor carbon nanotube layer, wherein the source electrode and the drain electrode are spaced from each other, and a channel is defined in the semiconductor carbon nanotube layer between the source electrode and the drain electrode. The MgO layer is located on the semiconductor carbon nanotube layer. The functional dielectric layer covers the MgO layer. The gate electrode is located on the functional dielectric layer.

Abstract: The present invention relates to a semiconductor structure and a method for its production, the semiconductor structure comprising at least one conductor region and at least two semiconductor regions, which semiconductor regions are partly separated by the at least one conductor region. The at least one conductor region comprises openings extending between the semiconductor regions which are partly separated by the respective conductor region. The semiconductor regions comprise at least one organic semiconductor material having a specific HOMO energy level, in particular a DPP polymer. The conductor region comprises a conductive material having a specific work function, said combination of specific energy level and work function allowing for a simple preparation of the conductive region. The invention further relates to a method for providing such a semiconductor structure.

Abstract: A photovoltaic device includes an inorganic substrate having a surface; an organic monolayer disposed onto the surface of the inorganic substrate, the inorganic monolayer having the following formula: ˜X—Y, wherein X is an oxygen or a sulfur; Y is an alkyl chain, an alkenyl chain, or an alkynyl chain; and X covalently bonds to the surface of the inorganic substrate by a covalent bond; a doped organic material layer disposed onto the organic monolayer; and a conductive electrode disposed onto a portion of the doped organic material.

Abstract: Example embodiments relate to a solar cell including organic nanowires. The solar cell may include a photoelectric conversion layer formed of a p-type material including an organic material and an n-type material including organic nanowires.

Abstract: A light-emitting element is provided, including a first electrode and a second electrode, a first layer including first and second organic compounds, the first layer being formed between the first electrode and the second electrode wherein the first organic compound is capable of emitting a first light and the second organic compound has an electron transporting property, and a second layer including third and fourth organic compounds, the second layer being formed between the first layer and the second electrode wherein the third organic compound is capable of emitting a second light and has an electron trap property and the fourth organic compound has an electron transporting property.

Abstract: An organic light emitting diode includes an anode; a cathode facing the anode; a first emitting material layer between the anode and the cathode and including a first host material, the first host material having a first triplet energy; and a hole transporting layer between the first emitting material layer and the anode, a material of the hole transporting layer having a second triplet energy being larger than the first triplet energy.

Abstract: A hole transporting region made of a hole transporting material, an electron transporting region made of an electron transporting material, and a mixed region (light emitting region) in which both the hole transporting material and the electron transporting material are mixed and which is doped with a triplet light emitting material for red color are provided in an organic compound film, whereby interfaces between respective layers which exist in a conventional lamination structure are eliminated, and respective functions of hole transportation, electron transportation, and light emission are exhibited. In accordance with the above-mentioned method, the organic light emitting element for red color can be obtained in which power consumption is low and a life thereof is long. Thus, the display device and the electric device are manufactured by using the organic light emitting element.

Abstract: A light emitting device may include a first electrode on a substrate, a first emission layer on the first electrode, a buffer layer on the first emission layer, a middle electrode on the buffer layer, a second emission layer on the middle electrode, and a second electrode on the second emission layer. The buffer layer may include a material selected from the group consisting of a metal oxide, a polyelectrolyte, and a combination thereof. The first emission layer, buffer layer, middle electrode, and second emission layer may be fabricated using a wet process.

Abstract: A method for forming a transparent electrode includes a step of forming a thin metal wire on a transparent substrate; and a step of forming a transparent conductive layer on the transparent substrate and the thin metal wire. The step of forming the transparent conductive layer is a step of forming the transparent conductive layer by applying an application liquid onto the transparent substrate and the thin metal wire by printing. The application liquid is composed of a conductive polymer, a water-soluble binder having a structural unit represented by the following general formula (I), a polar solvent having a log P value of ?1.50 to ?0.45, and 5.0 to 25 mass % of a glycol ether.

Abstract: An organic light emitting diode (OLED) display includes: a thin film transistor on the substrate; a first electrode electrically connected to the thin film transistor; a hole injection layer on the first electrode; an emission layer on the hole injection layer; an electron injection layer on the emission layer; a first intermediate layer on the electron injection layer; and a second electrode on the first intermediate layer.

Abstract: An organic light-emitting device includes an internal light extraction layer including a scattering layer and a smooth layer; and a transparent electrode including an underlying layer and an electrode layer, wherein the transparent electrode is provided on the smooth layer side of the internal light extraction layer, the internal light extraction layer has a refractive index in the range of 1.7 to less than 2.5, and the electrode layer includes silver or an alloy including silver as a main component.

Abstract: Disclosed is an organic EL lighting panel substrate that can improve the uniformity in luminance and chromaticity in an organic EL lighting panel plane and can suppress deterioration in reliability due to disconnection and the like caused by an auxiliary electrode. The organic EL lighting panel substrate (10) includes: a light-transmitting substrate (11); and a transparent electrode (12). The transparent electrode (12) is arranged on one surface of the light-transmitting substrate (11). The organic EL lighting panel substrate (10) further includes an auxiliary electrode (13) electrically connected to the transparent electrode (12). The light-transmitting substrate (11) has a groove (11c), and the auxiliary electrode (13) is arranged in the groove (11c) of the light-transmitting substrate (11). The auxiliary electrode (13) is formed of a material having a volume resistivity at 20° C. in the range from 1.59×10?8 to 13×10?8 ?·m.

Abstract: An organic electroluminescent device and a manufacturing method thereof, and a display device. The organic electroluminescent device comprises comprising a base substrate, a packaging structure, an organic electroluminescent structure located between the base substrate and the packaging structure, and a flexible printed circuit board; the base substrate being provided with a peripheral wiring structure electrically connected with an internal wiring of the organic electroluminescent structure; the peripheral wiring structure including a welding part. The welding part has a first surface facing the base substrate, at least a portion of the first surface being exposed to electrically connect with a welding terminal of the flexible printed circuit board.

Abstract: Provided is a display apparatus. The display apparatus includes a display panel, a back cover disposed on a rear side of the display panel, the back cover having a curved shape of which both ends protrude forward, and a fixing part fixing the back cover to maintain the curved shape of the back cover. The display panel is curved in a shape corresponding to that of the back cover.

Abstract: The organic electroluminescence display device has a circuit board, an element layer which contains an organic electrode luminescence film and a positive electrode and a negative electrode sandwiching the organic electroluminescence film and which is formed on the circuit board, and a sealing film sealing the element layer. The sealing film contains an inorganic layer covering the element layer and an organic layer formed between a part of the element layer and a part of the inorganic layer. The upper surface of the element layer has an inorganic contact area contacting the inorganic layer and an organic contact area contacting the organic layer. The organic contact area is a hollow in the upper surface of the element layer. The area of the upper surface of the organic layer is smaller than the area of the lower surface contacting the inner surface of the hollow.

Abstract: A display device comprises a substrate comprising a first surface and a second surface facing away from the first surface; a protection layer disposed over and bonded to the first surface of the substrate; and a plurality of pixels formed over the second surface of the substrate. The protection layer comprises a concave-convex pattern.

Abstract: According to one or more embodiments of the present invention, a display apparatus includes: a substrate; a display unit which is formed on the substrate and includes an emission area and a non-emission area; a first coating layer which is formed on the display unit and has an uneven area formed on the emission area; a first blocking layer which is formed on the non-emission area of the first coating layer; and a second blocking layer which is formed on the first blocking layer and prevents reflection of external light.

Abstract: The present disclosure provides a thin film encapsulation structure for encapsulating a functional device on a substrate, including: a mixing layer thin film covering the functional device, and an inorganic layer thin film located above the mixing layer thin film, wherein the mixing layer thin film is mainly composed of amorphous aluminum oxide and a crystalline oxide. The present disclosure also provides an organic light emitting device, including a substrate, an OLED device located on the substrate, and the thin film encapsulation structure as mentioned above.