Abstract: A method of growing an AlGaN semiconductor material utilizes an excess of Ga above the stoichiometric amount typically used. The excess Ga results in the formation of band structure potential fluctuations that improve the efficiency of radiative recombination and increase light generation of optoelectronic devices, in particular ultraviolet light emitting diodes, made using the method. Several improvements in UV LED design and performance are also provided for use together with the excess Ga growth method. Devices made with the method can be used for water purification, surface sterilization, communications, and data storage and retrieval.

Abstract: A nitride semiconductor structure includes a nitride semiconductor layer having a principal plane and including a nitride semiconductor. The normal to the principal plane of the nitride semiconductor layer is inclined at 5 degrees or more and 17 degrees or less with respect to the [11-22] axis of the nitride semiconductor constituting the nitride semiconductor layer in the direction of the +c-axis of the nitride semiconductor. The nitride semiconductor structure may further include a substrate having a principal plane which supports the nitride semiconductor layer on the principal plane. The substrate may include any one selected from the group consisting of a nitride semiconductor, sapphire, and Si.

Abstract: The present invention relates to light-emitting diodes (LEDs), and related components, processes, systems, and methods. In certain embodiments, an LED that provides improved optical and thermal efficiency when used in optical systems with a non-rectangular input aperture (e.g., a circular aperture) is described. In some embodiments, the emission surface of the LED and/or an emitter output aperture can be shaped (e.g., in a non-rectangular shape) such that enhanced optical and thermal efficiencies are achieved. In addition, in some embodiments, chip designs and processes that may be employed in order to produce such devices are described.

Abstract: There is provided a light-emitting device comprising a light-emitting element. The light-emitting device of the present invention comprises an electrode part for the light-emitting element; a reflective layer provided on the electrode part; and the light-emitting element provided on the reflective layer such that the light-emitting element is in contact with at least a part of the reflective layer, wherein the light-emitting element and the electrode part are in an electrical connection with each other by mutual surface contact via the at least a part of the reflective layer, wherein the electrode part serves as a supporting layer for supporting the light-emitting element, and wherein the electrode part extends toward the outside of the light-emitting element and beyond the light-emitting element.

Abstract: A light emitting device includes a light emitting structure including a plurality of compound semiconductor layers. A current spreading layer is provided under the light emitting structure, and a plurality of wavelength conversion structures is provided in the current spreading layer. An electrode layer is provided under the current spreading layer, and an electrode is provided on the light emitting structure.

Abstract: In a wiring conversion part which connects a lower conductive film to a first conductive film each functioning as a wiring, a first transparent conductive film is formed into a pattern in which it covers an end surface of the first conductive film, and an angle formed at a corner part in a portion of the first transparent conductive film making contact with a lower first insulating film (outside a width of the first conductive film) is larger than 90 degrees and smaller than 270 degrees or the corner part has an arc shape. A second transparent conductive film is connected to the lower conductive film and the first transparent conductive film, and the first transparent conductive film is connected to the first conductive film, so that the lower conductive film and the first conductive film are electrically connected to each other.

Abstract: An electroluminescent element includes a first transparent electrode, a second transparent electrode, a light emitting layer sandwiched between the first transparent electrode and the second transparent electrode, a first transparent member formed on a surface of the first transparent electrode opposite to the light emitting layer, and a second transparent member formed on a surface of the second transparent electrode opposite to the light emitting layer, wherein refractive indices of the first transparent electrode and the second transparent electrode are selected such that as seen from the light emitting layer, a reflectance of an interface between the light emitting layer and the first transparent electrode becomes higher than a reflectance of an interface between the light emitting layer and the second transparent electrode, and wherein a refractive index of the first transparent member is set to be higher than a refractive index of the second transparent member.

Abstract: A radiation-emitting semiconductor chip (1) is specified, comprising—a semiconductor layer sequence (2) having a first main surface (3) and a second main surface (4) situated opposite the first main surface (3) wherein the semiconductor layer sequence (2) has an active zone (5) suitable for generating electromagnetic radiation, —a structured mirror layer (6), which is electrically non-conductive during operation and is arranged on the side of the first main surface (3) of the semiconductor layer sequence (2), wherein the mirror layer (6) has at least one mirror region (6A, 6B, 6C) which regionally covers the first main surface (3), —at least one encapsulation region (7A, 7B, 7C) which surrounds the at least one mirror region (6A, 6B, 6C) on all sides and is in direct contact with the mirror region (6A, 6B, 6C), wherein the at least one encapsulation region (7A, 7B, 7C); is electrically non-conductive during operation.

Abstract: A method for producing an optoelectronic semiconductor chip is specified, comprising the following steps: providing an n-conducting layer (2), arranging a p-conducting layer (4) on the n-conducting layer (2), arranging a metal layer sequence (5) on the p-conducting layer (4), arranging a mask (6) at that side of the metal layer sequence (5) which is remote from the p-conducting layer (4), in places removing the metal layer sequence (5) and uncovering the p-conducting layer (4) using the mask (6), and in places neutralizing or removing the uncovered regions (4a) of the p-conducting layer (4) as far as the n-conducting layer (2) using the mask (6), wherein the metal layer sequence (5) comprises at least one mirror layer (51) and a barrier layer (52), and the mirror layer (51) of the metal layer sequence (5) faces the p-conducting layer (4).

Abstract: Aspects include Light Emitting Diodes that have a GaN-based light emitting region and a metallic electrode. The metallic electrode can be physically separated from the GaN-based light emitted region by a layer of porous dielectric, which provides a reflecting region between at least a portion of the metallic electrode and the GaN-based light emitting region.

Abstract: An optoelectronic device includes a carrier, a housing, and a radiation source that emits electromagnetic radiation arranged on the carrier, wherein the housing is fixed to the carrier by a glue layer, the glue layer is arranged between a first face of the housing and a second face of the carrier, the first face of the housing and the second face of the carrier are arranged at an inclination angle to each other, a distance between the first face and the second face increases from an outer rim in a direction to a middle area of the carrier, and a thickness of the glue layer increases at least partially from the outer rim in the direction to the middle area of the carrier.

Abstract: A mounting substrate includes: a base; and at least one pair of wiring patterns disposed apart from each other on the base. At least one of the wiring patterns has a mounting portion, which is configured to support an electronic part thereon and which is rectangular in a plan view. The at least one of the wiring patterns defines a hole, which exposes a part of the base and which is disposed in at least a part of an outer edge of the mounting portion.

Abstract: An apparatus is provided for modulating the photon output of a plurality of free standing quantum dots. The apparatus comprises a first electron injection layer (210, 310, 410) disposed between a first electrode (212, 312, 412) and a layer (208, 308, 408) of the plurality of free standing quantum dots. A hole transport layer (206, 306, 406) is disposed between the layer (208, 308, 408) of the plurality of quantum dots and a second electrode (204, 304, 404). A light source (224, 324, 424) is disposed so as to apply light to the layer (208, 308, 408) of the plurality of free standing quantum dots. The photon output of the layer (208, 308, 408) of the plurality of free standing quantum dots is modulated by applying a voltage to the first and second electrodes (212, 312, 412, 204, 304, 404).

Abstract: A method of manufacturing a light-emitting device includes forming a separation layer on an upper surface of a supporting substrate; forming a plurality of external electrode layers on the separation layer; mounting a plurality of light-emitting elements on the external electrode layers; forming a plurality of resin layers between the supporting substrate and each of the light-emitting elements after mounting the light-emitting elements, the resin layers being formed such that the resin layers are separated from one another, and each resin layer underlies at least one light-emitting element; and applying laser light to the separation layer from a lower surface side of the supporting substrate, and separating the supporting substrate and the light-emitting elements from each other.

Abstract: A light emitting device in an embodiment includes first and second light transmissive insulators and a light emitting diode arranged between them. First and second electrodes of the light emitting diode are electrically connected to a conductive circuit layer provided on a surface of at least one of the first and second light transmissive insulators. Between the first light transmissive insulator and the second light transmissive insulator, a third light transmissive insulator is embedded which has at least one of a Vicat softening temperature of 80° C. or higher and 160° C. or lower and a tensile storage elastic modulus of 0.01 GPa or more and 10 GPa or less.

Abstract: Provided is a lighting device, comprising: a light source module comprising: at least one light source disposed on a printed circuit board; and a resin layer disposed on the printed circuit board so that the light source is embedded; an indirect light emission unit which is formed in at least any one of one side and another side of the light source module and which reflects light irradiated from the light source; and a diffusion plate having an upper surface which is in contact with an upper part of the light source module, and a side wall which is integrally formed with the upper surface and formed to extend in a lower side direction and which is adhered onto an outer side surface of the indirect light emission unit, whereby flexibility of the product itself can be secured, and durability and reliability thereof can be also improved.

Abstract: Embodiments provide a light emitting device including a substrate, a light emitting structure disposed under the substrate, the light emitting structure including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer, a sub-mount, first and second metal pads disposed on the sub-mount and electrically spaced apart from one another, a one first bump disposed between the first conductive semiconductor layer and the first metal pad and a second bump located between the second conductive semiconductor layer and the second metal pad. A plurality of active areas in which The first semiconductor layer and the active layer are disposed are spaced apart from one another when viewed in plan.

Abstract: A package includes a plurality of electrode pairs, each electrode pair including a first electrode on one side and a second electrode on another side in a plan view. The first electrode is electrically connected to the second electrode included in an electrode pair adjacent to a first or second lateral side of the one electrode pair, and is not electrically connected to the first electrode included in the electrode pair adjacent to the first or second side of the one electrode pair. The second electrode is electrically connected to the first electrode included in an electrode pair adjacent to a lower side of the one electrode pair, and is not electrically connected to the second electrode included in the electrode pair adjacent to the first or second lateral side of the one electrode pair.

Abstract: A light emitting device has: a plurality of light emitting elements, a base having a first main surface and a second main surface on the opposite side from the first main surface, the base having conductive patterns disposed on the first main surface on which the light emitting elements are mounted, conductive patterns disposed on the second main surface, and a groove provided on the second main surface of the base corresponding to a space between the light emitting elements, and a light reflecting member that integrally covers side surfaces of the plurality of light emitting elements.

Abstract: Provided is an LED light which may include a base plate, an LED module disposed under the base plate, a plurality of heat pipes provided over the base plate, and a plurality of heat dissipation fins provided over the base plate. The plurality of heat pipes may include a first portion thermally coupled to the base plate and a second portion that extends from the first portion. The plurality of heat dissipation fins may be spaced apart from each other and thermally coupled to the second portion of the heat pipes to dissipate heat from the LED module. The LED light may include an upper bracket provided over the plurality of heat dissipation fins and fastened to a hanger, and a plurality of studs that connect the base plate to the upper bracket.

Abstract: Provided are: an Mg—Si system thermoelectric conversion material which exhibits stably high thermoelectric conversion performance; a sintered body for thermoelectric conversion, which uses this Mg—Si system thermoelectric conversion material; a thermoelectric conversion element having excellent durability; and a thermoelectric conversion module. A method for producing an Mg—Si system thermoelectric conversion material according to the present invention comprises a step for heating and melting a starting material composition that contains Mg, Si, Sb and Zn. It is preferable that the contents of Sb and Zn in the starting material composition are respectively 0.1-3.0 at % in terms of atomic weight ratio.

Abstract: A thermoelectric element includes a first thermoelectric layer and a second thermoelectric layer, wherein a p-n junction is formed when the layers are formed. To specify a generic thermoelectric element that is suitable for a series connection in a thermoelectric generator without cabling, according to the invention—a substrate comprises a first and second contact surface on a cold side and a third contact surface on a hot side of the substrate. A temperature gradient can be applied between the contact surfaces on the cold and hot side. The first thermoelectric layer of the thermoelectric element is arranged on the substrate and connects a second contact surface to a third contact surface. The second thermoelectric layer of the thermoelectric element is arranged on the first thermoelectric layer, the p-n junction thereby being formed, and is connected to the first contact surface. The invention further relates to a method for producing such a thermoelectric element.

Abstract: A driving circuit is configured to apply a drive signal to a first terminal of a drive piezoelectric actuator having a second terminal coupled to ground. In response, the drive piezoelectric actuator controls the position of a head in a head gimbal assembly. A reference piezoelectric actuator, characterized by dimensional and electro-mechanical properties substantially matching those of the drive piezoelectric actuator, is included in the driving circuit. The driving circuit controls the reference piezoelectric actuator so that a voltage is produced across the terminals of the reference piezoelectric actuator, wherein that voltage is proportional to the charge stored in the reference piezoelectric element. That voltage is transmitted through a buffer amplifier to the drive piezoelectric actuator where it creates in it a charge equal to the charge in the reference piezoelectric actuator.

Abstract: A quartz vibrator that includes a substrate, a quartz vibrating element, and a dome-shaped cap. The quartz vibrating element is mounted on the substrate. The cap is bonded to the substrate. The cap defines and forms a sealed space that seals the quartz vibrating element along with the substrate. The cap has a side wall portion, a ceiling portion, and a connecting portion. The side wall portion encloses the quartz vibrating element. The ceiling portion is positioned above the quartz vibrating element. The connecting portion connects the side wall portion and the ceiling portion. The connecting portion is thinner than the side wall portion and the ceiling portion.

Abstract: A tubular spring is provided for receiving and pretensioning a piezoelectric or magnetostrictive actuator of an actuator unit, e.g., for actuating a fuel injector valve in internal combustion engines, wherein the tubular spring comprises at least two types of recesses, each comprising different maximum lateral extensions in the longitudinal direction of the tubular spring. The tubular spring is designed to comprise a uniform load distribution about the circumference of the tubular spring even without welding the longitudinal sides thereof abutting one another.

Abstract: A displacement sensor having a rectangular shaped elastic member. A piezoelectric element is attached to a first main face of the elastic member. The piezoelectric element has a rectangular-shaped piezoelectric sheet and electrodes on both main faces of the piezoelectric sheet. The piezoelectric sheet is made of poly-L-lactic acid and is at least uniaxially-stretched. The piezoelectric element is attached so that the uniaxial-stretching direction of the piezoelectric sheet is 45° relative to a long-side direction of the elastic member. When the elastic member is bent along the long-side direction, the piezoelectric sheet is stretched along the long-side direction, and the piezoelectric element generates voltage of predetermined level.

Abstract: An electromechanical transducer element includes a first electrode, an electromechanical transducer film, and a second electrode. The electromechanical transducer film is a {100} preferentially oriented polycrystalline film. A sum of an orientation degree ?{111} of {111} plane and an orientation degree ?{100} of {100} plane is in a range of not less than 0.0002 and not greater than 0.25. At least two diffraction peaks of a plurality of diffraction peaks separated in diffraction peaks derived from {200} plane or {400} plane obtained by the ?-2? measurement of the electromechanical transducer film according to the X-ray diffraction method attribute to a tetragonal a-domain structure and a tetragonal c-domain structure, respectively. A value of Sc/(Sa+Sc) is not greater than 20%, where Sa represents an area of a diffraction peak attributing to the tetragonal a-domain structure and Sc represents an area of a diffraction peak attributing to the tetragonal c-domain structure.

Abstract: Systems and method include providing a non-volatile random access memory (NVRAM) stack including a plurality of layers. The plurality of layers includes a dielectric layer and a metal layer. The metal layer of the NVRAM stack is patterned. The patterning causes damage to lateral side portions of the dielectric layer. The lateral portions of the dielectric layer are repaired by depositing dielectric material on the lateral side portions of the dielectric layer.

Abstract: A method of manufacturing a magnetic memory device may include forming a lower magnetic layer, a tunnel barrier layer, and an upper magnetic layer on a substrate, forming a magnetic tunnel junction pattern by etching a stacked structure including the lower magnetic layer, the tunnel barrier layer, and the upper magnetic layer, forming a boron-absorption layer covering the magnetic tunnel junction pattern, and performing a heat treatment process so that boron included in the upper and lower magnetic layers may be absorbed by the boron-absorption layer. The heat treatment process may be undertaken in a gaseous atmosphere including at least one of hydrogen, oxygen, and nitrogen.

Abstract: A pattern-forming method includes providing a first ion beam at a first incidence angle and a second ion beam at a second incidence angle to a surface of an etch target layer formed on a substrate. Patterns are formed by patterning the etch target layer using the first and second ion beams. The first ion beam and the second ion beam are substantially symmetrical to each other with respect to a normal line that is perpendicular to a top surface of the substrate. Each of the first and second incidence angles is greater than 0 degrees and smaller than an angle obtained by subtracting a predetermined angle from 90 degrees.

Abstract: In some embodiments, an integrated circuit includes narrow, vertically-extending pillars that fill openings formed in the integrated circuit. In some embodiments, the openings can contain phase change material to form a phase change memory cell. The openings occupied by the pillars can be defined using crossing lines of sacrificial material, e.g., spacers, that are formed on different vertical levels. The lines of material can be formed by deposition processes that allow the formation of very thin lines. Exposed material at the intersection of the lines is selectively removed to form the openings, which have dimensions determined by the widths of the lines. The openings can be filled, for example, with phase change material.

Abstract: Non-volatile memory cell having small programming power and a reduced resistance drift are provided. In one embodiment of the present application, a non-volatile memory cell is provided that includes a layer of dielectric material that has a via opening that exposes a surface of a bottom electrode. A metal nitride spacer is located along a bottom portion of each sidewall surface of the layer of dielectric material and in the via opening. A phase change material structure is present in the via opening and contacting a top portion of each sidewall surface of the layer of dielectric material and a topmost surface of each metal nitride spacer. A top electrode is located on a topmost surface of the phase change material structure.

Abstract: A resistive random access memory (RRAM) cell with a composite capping layer is provided. A tantalum oxide based layer is arranged over a bottom electrode layer. The composite capping layer is arranged over and abutting the tantalum oxide based layer. The composite capping layer includes a first metal layer and a second metal layer overlying the first metal layer. The first metal layer is more reactive with the tantalum oxide based layer than the second metal layer. A top electrode layer is arranged over the composite capping layer. A method for manufacturing the RRAM cell is also provided.

Abstract: A method of suppressing propagation of leakage current in an array of switching devices. The method includes providing a dielectric breakdown element integrally and serially connected to a switching element within each of the switching device. A read voltage (for example) is applied to a selected cell. The propagation of leakage current is suppressed by each of the dielectric breakdown element in unselected cells in the array. The read voltage is sufficient to cause breakdown in the selected cells but insufficient to cause breakdown in the serially connected, unselected cells in a specific embodiment. Methods to fabricate of such devices and to program, to erase and to read the device are provided.

Abstract: Subject matter disclosed herein may relate to fabrication of correlated electron materials used, for example, to perform a switching function. In embodiments, precursors, in a gaseous form, may be utilized in a chamber to build a film of correlated electron materials comprising various impedance characteristics.

Abstract: An electronic device comprising a semiconductor memory unit that includes a resistance variable element formed over a substrate, and including stacked therein a bottom electrode, a variable resistance layer and a top electrode, and a barrier layer formed over the resistance variable element, and including an amorphous silicon layer which is doped with at least one kind of impurity.

Abstract: A method for manufacturing an organic EL panel includes: applying sealing resin for forming a sealing resin layer to a plurality of spots on an application target surface of one of an EL substrate and a CF substrate, the application target surface being a surface to which the sealing resin is to be applied, and stacking the EL substrate and the CF substrate one on top of the other after the sealing resin is applied, and when the sealing resin is applied, the amount of the sealing resin applied to a spot near an edge of the application target surface is less than the amount of the sealing resin applied to a spot further inward than the spot near the edge.

Abstract: A substrate is for use in manufacturing a display device. The substrate includes a first area that corresponds to pixel positions. The substrate further includes a second area adjacent to the first area. The substrate further includes a first mark disposed in the second area, wherein a first virtual line corresponds to the first mark. The substrate further includes a second mark disposed in the second area and spaced from the first mark, wherein a second virtual line corresponds to the second mark and intersects the first virtual line at a virtual reference point. The substrate further includes an indicator disposed in the second area, spaced from the first mark and the second mark, and corresponding to an opening of a mask, wherein a positional relation between the virtual reference point and a point of the indicator represents a positional relation between the substrate and the mask.

Abstract: A thin film forming apparatus includes: a thin film source including a thin film on one surface of the thin film source to be transferred to a substrate; and a light emitter configured to apply light energy to the thin film source to transfer the thin film to the substrate.

Abstract: An organic light-emitting diode (OLED) display and a method of manufacturing the same are disclosed. In one aspect, the method includes performing a first mask process of forming an active layer of a thin-film transistor (TFT) and a first electrode of a capacitor over a substrate and performing a second mask process of i) forming a gate insulating layer and ii) forming a gate electrode of the TFT and a second electrode of the capacitor over the gate insulating layer. The method also includes performing a third mask process of i) forming first and second interlayer insulating layers and ii) removing portions of the first and second interlayer insulating layers so as to form a contact hole that exposes a portion of the active layer. The method also includes performing a fourth mask process of forming a pixel electrode over the second interlayer insulating layer.

Abstract: A polymer comprises a polymeric chain represented by formula (I) or (II). In formula (I) a, b, d, and n are integers, a from 0 to 3, b from 1 to 5, c from 1 to 3, d from 1 to 5, and n from 2 to 5000; R1 and R2 are side chains; R3 and R4 are each independently H or a side chain; and when a is 0, R3 and R4 are side chains. In formula (II), a, b, c, d, e, and n are integers, a from 1 to 3, b and c being independently 0 or 1, d and e being independently 1 or 2, and n from 2 to 5000; R1 and R2 are side chains except —COOalkyl; and X1, X2 and X3 are independently O, S, or Se. Semiconductors and devices comprising the polymer are also provided.

Abstract: A method for making electronic devices based on derivatized ladder polymer (Pz-BBL) including photovoltaic modules and simple thin film transistors in planar and mechanically flexible and stretchable constructs.

Abstract: An organic electroluminescent element including a substrate, a pair of electrodes including an anode and a cathode, disposed on the substrate, and at least one organic layer including a light emitting layer, disposed between the electrodes. At least one kind of a compound represented by the following general formula (I) is contained in any layer of the at least one organic layer. The organic electroluminescent element has good luminous efficiency, driving voltage, and driving durability, and has low dependence of such performance on a deposition rate. Wherein: L1 to L4, n1 to n4, A1, A5, A6, A10 and, R are as defined in the application.

Abstract: A compound for an organic optoelectronic device is represented by the following Chemical Formula 1. wherein R1, R2, R3, R4, Ar1, Ar2, Ar3, L1, L2, L3, n1, n2, and n3 are further defined in the specification.

Abstract: An organic thin film light-emitting element having both high luminous efficiency and high durability can be provided using a light-emitting element material that comprises a compound having a specified carbazole skeleton.

Abstract: The present invention relates to aromatic nitrogen heterocycles, and to electronic devices, in particular organic electroluminescent devices, which comprise these aromatic nitrogen heterocycles, in particular in a hole-injection layer and/or in a hole-transport layer and/or in a hole-blocking layer and/or in an electron-transport layer and/or in an emitting layer.

Abstract: A phosphine oxide-based compound represented by Formula 1, and an organic light-emitting device including the phosphine oxide-based compound. wherein Ar1 through Ar3, and a, b, and c are defined as in the specification.

Abstract: An organic light emitting diode device including an electron transport layer containing a compound represented by Chemical Formula 1, and an emission layer containing a compound represented by Chemical Formula 2.

Abstract: A compound for an organic optoelectronic device represented by Chemical Formula 1 wherein, in Chemical Formula 1, variables A, Y1 to Y4, X1, m, R1 to R4, L1 to L3, n1 to n3, Ar1 and Ar2 are described in the specification.

Abstract: Disclosed is an organic electroluminescent device having long life, while exhibiting high luminous efficiency. Also disclosed are an illuminating device and a display, each using such an organic electroluminescent device. In the organic electroluminescent device, a compound represented by the general formula (A) which is suitable as a host material for a phosphorescent metal complex is used at least in one sublayer of a light-emitting layer.