Abstract: The disclosed invention is related to methods, compositions, kits and isolated nucleic acid sequences for targeting Herpes Simplex Virus (HSV) nucleic acid (e.g., HSV-1 and/or HSV-2 nucleic acid). Compositions include amplification oligomers, detection probe oligomers and/or target capture oligomers. Kits and methods comprise at least one of these oligomers.

Abstract: A method for producing blast-furnace blowing coal to be blown through a tuyere into the interior of the blast-furnace body of a blast furnace, wherein: the composition and melting point of the ash from the coal are analyzed in advance; the composition of the blast-furnace slag is analyzed in advance; the blast-furnace slag contains more calcium oxide than the coal ash does; and the coal and the blast-furnace slag are mixed, on the basis of the composition and melting point of the coal ash and the composition of the blast-furnace slag, and in a manner such that the amount of calcium oxide contained in a quaternary system phase diagram including silicon dioxide, magnesium oxide, aluminum oxide and calcium oxide, which are the principal components of the coal ash and the blast-furnace slag, causes the melting point of the ash to be 1400° C. or higher.

Abstract: A bearing component having increased rolling-contact fatigue life, the bearing component being made of a bearing steel that satisfies a predetermined chemical composition, and Si (boundary Si), Mn (boundary Mn), Cr (boundary Cr), Cu (boundary Cu), Ni (boundary Ni), and Mo (boundary Mo) included in a matrix phase region (boundary surface region) from the surface of spheroidized cementite to 20 nm away satisfy the formula: 9.0?1.4×boundary Si+1.8×boundary Mn+5.5×boundary Cu+4.2×boundary Ni+4.8×boundary Cr+5.5×boundary Mo.

Abstract: A process for recovering copper from heap leach residues, the process comprising treating heap leach residues to provide treated heap leach residues providing improved permeability of a heap of the treated heap leach residues, and leaching the heap of the treated heap leach residues with a leaching solution. Treating the heap leach residues includes: a) blending the heap leach residues with additional material to provide a blend; or b) agglomerating the heap leach residues; or c) both blending the heap leach residues with additional material and agglomerating.

Abstract: A method for allowing production of high-purity perrhenic acid from crude rhenium sulfide by applying a dry process is provided. A method for producing an aqueous solution of perrhenic acid includes 1) a step for roasting rhenium sulfide under an oxygen-containing gas to collect gasified rhenium oxide; 2) a step for cooling and solidifying the gasified rhenium oxide while keeping sulfur oxide entrained in the gasified rhenium oxide a gaseous state, and subsequently performing solid-gas separation, thereby improving purity of rhenium oxide; and 3) a step for dissolving the solidified rhenium oxide into water, or heating and gasifying the solidified rhenium oxide and then dissolving the gasified rhenium oxide into water, to obtain the aqueous solution of perrhenic acid.

Abstract: Provided is an Al alloy film for display devices, which has excellent heat resistance under high temperatures, low electric resistance (wiring resistance), and excellent corrosion resistance under alkaline environments. The present invention relates to an Al alloy film containing Ge (0.01-2.0 at. %) and a group X element (Ta, Ti, Zr, Hf, W, Cr, Nb, Mo, Ir, Pt, Re, and/or Os), wherein, with regard to precipitates each containing Al, the group X element and Ge generated when a heat treatment at 450 to 600° C. is carried out, the density of some of the precipitates which have equivalent circle diameters of 50 nm or more is controlled.

Abstract: Provided are a stainless steel foil and a catalyst carrier for an exhaust gas purifying device which uses the foil. Specifically, a stainless steel foil contains, in percent by mass, 0.05% or less of C, 2.0% or less of Si, 1.0% or less of Mn, 0.003% or less of S, 0.05% or less of P, more than 15.0% and less than 25.0% of Cr, 0.30% or less of Ni, 3.0% to 10.0% of Al, 0.03% to 1.0% of Cu, 0.10% or less of N, 0.02% or less of Ti, 0.02% or less of Nb, 0.02% or less of Ta, 0.005% to 0.20% of Zr, 0.03% to 0.20% of REM excluding Ce, 0.02% or less of Ce, 2.0% to 6.0% in total of at least one of Mo and W, and the balance being Fe and incidental impurities.

Abstract: An austenitic stainless steel composition having low nickel and molybdenum and exhibiting high corrosion resistance and good formability. The austenitic stainless steel includes, in weight %, up to 0.20 C, 2.0-6.0 Mn, up to 2.0 Si, 16.0-23.0 Cr, 5.0-7.0 Ni, up to 3.0 Mo, up to 3.0 Cu, 0.1-0.35 N, up to 4.0 W, up to 0.01 B, up to 1.0 Co, iron and impurities. The austenitic stainless steel has a ferrite number less than 11 and an MD30 value less than ?10° C.

Abstract: An alloy having an ?? martensite which is a processing starting structure is hot worked. The alloy is heated at a temperature increase rate of 50 to 800° C./sec, and strain is given at not less than 0.5 by a processing strain rate of from 0.01 to 10/sec in a case of a temperature range of 700 to 800° C., or by a processing strain rate of 0.1 to 10/sec in a case of a temperature range of 800° C. to 1000° C. By generating equiaxial crystals having average crystal particle diameters of less than 1000 nm through the above processes, a titanium alloy having high strength and high fatigue resistant property can be obtained, in which hardness is less than 400 HV, tensile strength is not less than 1200 MPa, and static strength and dynamic strength are superior.

Abstract: An ?+? type hot-rolled titanium alloy sheet, wherein: (a) ND represents the normal direction of a hot-rolled sheet; RD represents the hot rolling direction; TD represents the hot rolling width direction; ? represents the angle formed between the orientation of c axis and the ND; ? represents the angle formed between a plane including the orientation of the c axis and the ND, and a plane including the ND and the TD; (b1) XND represents the highest (0002) relative intensity of the X-ray reflection caused by crystal grains when ? is from 0° to 30° and ? is within the entire circumference; (b2) XTD represents the highest (0002) relative intensity of the X-ray reflection caused by crystal grains when ? is from 80° to 100° and ? is ±10°. (c) The ?+? type titanium alloy sheet has a value for XTD/XND of at least 5.0.

Abstract: Methods of refining the grain size of a titanium alloy workpiece include beta annealing the workpiece, cooling the beta annealed workpiece to a temperature below the beta transus temperature of the titanium alloy, and high strain rate multi-axis forging the workpiece. High strain rate multi-axis forging is employed until a total strain of at least 1 is achieved in the titanium alloy workpiece, or until a total strain of at least 1 and up to 3.5 is achieved in the titanium alloy workpiece. The titanium alloy of the workpiece may comprise at least one of grain pinning alloying additions and beta stabilizing content effective to decrease alpha phase precipitation and growth kinetics.

Abstract: A thermal spray powder is provided for use in a thermal spray technique, such as flame spraying, plasma spraying, cold spraying, and high velocity oxygen fuel spraying (HVOF). The thermal spray powder is formed by water or gas atomization and comprises 3.0 to 7.0 wt. % carbon, 10.0 to 25.0 wt. % chromium, 1.0 to 5.0 wt. % tungsten, 3.5 to 7.0 wt. % vanadium, 1.0 to 5.0 wt. % molybdenum, not greater than 0.5 wt. % oxygen, and at least 40.0 wt. % iron, based on the total weight of the thermal spray powder. The thermal spray powder can be applied to a metal body, such as a piston or piston ring, to form a coating. The thermal spray powder can also provide a spray-formed part.

Abstract: A hard film whose composition formula satisfies M1-a-bCaNb, in which M is at least one element selected from Ti, Cr and Al, or is the element and at least one element selected from Group 4 elements except for Ti, Group 5 elements, Group 6 elements except for Cr, Si, Y, and rare earth elements. Atomic ratios of M, C and N satisfy: 0.01?a?0.50; 0.10?b?0.50; and 0<1-a-b. A ratio y of C-to-C bonding to all C bonding in the film is 0.20 or more.

Abstract: The present invention relates to a filtered cathodic-arc ion source that reduces, or even eliminates, macroparticles while minimally compromising the compact size, simplicity, and high flux ion production benefits of unfiltered cathodic-arc sources. Magnetic and electrostatic forces are implemented in a compact way to guide ions along curved trajectories between the cathode source and the workpiece area such that macroparticles, which are minimally affected by these forces and travel in straight lines, are inhibited from reaching the workpieces. The present invention implements this filtering technique in a device that is compact, symmetrical and easy to manufacture and operate and which does not substantially compromise coating deposition rate, area, or uniformity.

Abstract: The invention relates to a PVD process for coating a substrate with a layer containing at least one microcrystalline metallic borocarbide phase. During the PVD process, the source output is pulsed such that the at least one peak of which the half intensity width allows conclusions to be drawn about the presence of a microcrystalline phase of the metallic borocarbide layer can be identified in the x-ray spectrum of a layer produced in this way at a substrate temperature below 600° C.

Abstract: So as to control the operation of a sputter target (9) during lifetime of the target and under HIPIMS operation part (I) of a magnet arrangement associated to the target (9) is retracted from the target (9) whereas a second part II of the magnet arrangement is, if at all, retracted less from the addressed backside (7) during lifetime of the target (9). Thereby, part I is closer to the periphery of target (9) than part II, as both are eccentrically rotated about a rotational axis (A).

Abstract: A method for producing a transparent conductive film includes: forming a transparent conductive coating on at least one surface of an organic polymer film substrate in the presence of inert gas by RF superimposed DC sputtering deposition using an indium-based complex oxide target with a high horizontal magnetic field of 85 to 200 mT at a surface of the target in a roll-to-roll system, wherein the indium-based complex oxide target has a content of a tetravalent metal element oxide of 7 to 15% by weight as calculated by the formula {(the amount of the tetravalent metal element oxide)/(the amount of the tetravalent metal element oxide+the amount of indium oxide)}×100(%), wherein the transparent conductive coating has a thickness in the range of 10 to 40 nm, and the transparent conductive coating has a specific resistance of 1.3×10?4 to 2.8×10?4 ?·cm.

Abstract: A platen having different grounding structures is disclosed. Different grounding structures, such as pins, flat-end posts and mushroom-shaped grounding structures, may be disposed on the surface of a platen. Each type of grounding structure may be advantageously used with a particular type of workpiece. In one embodiment, all of the different grounding structures are mechanically biased upward, such as by springs, from the surface of the platen such that all may contact the back surface of a workpiece disposed on the platen. In another embodiment, one or more actuators are used to lift and lower subsets of the grounding structures such that only a subset of the grounding structures contacts the back surface of the workpiece. These subsets may be all a single type of grounding structure, or may be associated with a particular type of workpiece.

Abstract: A thin film deposition apparatus, a deposition method using the same, and a method of manufacturing an organic light-emitting display apparatus by using the apparatus are provided. A thin film deposition apparatus is provided that includes a chamber containing a substrate holder on which a substrate is mounted, a plurality of rotary shaft units that change rotation and an inclination angle of the substrate holder, and a target unit that supplies a thin film material for formation on the substrate.

Abstract: Systems and methods are provided for contact formation. A semiconductor structure is provided. The semiconductor structure includes an opening formed by a bottom surface and one or more side surfaces. A first conductive material is formed on the bottom surface and the one or more side surfaces to partially fill the opening, the first conductive material including a top portion and a bottom portion. Ion implantation is formed on the first conductive material, the top portion of the first conductive material being associated with a first ion density, the bottom portion of the first conductive material being associated with a second ion density lower than the first ion density. At least part of the top portion of the first conductive material is removed. A second conductive material is formed to fill the opening.

Abstract: Embodiments of the present disclosure relate to a metal-doped amorphous carbon hardmask for etching the underlying layer, layer stack, or structure. In one embodiment, a method of processing a substrate in a processing chamber includes exposing a substrate to a gas mixture comprising a carbon-containing precursor and a metal-containing precursor, reacting the carbon-containing precursor and the metal-containing precursor in the processing chamber to form a metal-doped carbon layer over a surface of the substrate, forming in the metal-doped carbon layer a defined pattern of through openings, and transferring the defined pattern to an underlying layer beneath the metal-doped carbon layer using the metal-doped carbon layer as a mask. An etch hardmask using the inventive metal-doped amorphous carbon film provides reduced compressive stress, high hardness, and therefore higher etch selectivity.

Abstract: Methods for depositing film on substrates are provided. In these embodiments, the substrates are processed in batches. Due to changing conditions within a reaction chamber as additional substrates in the batch are processed, various film properties may trend over the course of a batch. The methods herein can be used to address the trending of film properties over the course of a batch. More specifically, film property trending is minimized by changing the amount of RF power used to process substrates over the course of the batch. Such methods are sometimes referred to as RF compensation methods.

Abstract: An apparatus for forming a thin film on a substrate in a reaction container by alternately supplying a raw material gas and a reaction gas into the reaction container under a vacuum atmosphere is provided. The apparatus includes: a raw material gas supply unit installed in an end portion of a supply path of the raw material gas; a pressure adjusting valve installed in an vacuum exhaust path; a pressure regulating valve and an opening and closing valve which are respectively installed in a bypass path detouring the pressure adjusting valve; a tank installed in the middle of the supply path of the raw material gas; a flow rate adjusting valve installed in a downstream side of the tank; and a control unit configured to control the opening and closing valve to be opened when the raw material gas stored in the tank is supplied into the reaction container.

Abstract: A method for forming a thin film on a substrate includes discharging a deposition material from a deposition source through a plurality of deposition source nozzles arranged in a first direction on a deposition source nozzle unit disposed at a side of the deposition source; passing the deposition material through a patterning slit sheet; and depositing the deposition material on the substrate, while moving the substrate and the patterning slit sheet relative to each other. The patterning slit sheet is spaced apart from the substrate by a distance. A blocking member is disposed between the substrate and the deposition source and is moved along with the substrate to be positioned to screen at least one portion of the substrate, and the patterning slit sheet is disposed opposite to and spaced apart from the deposition source nozzle unit, and includes a plurality of patterning slits arranged in the first direction.

Abstract: A composition that includes a high-valent compound of copper, silver or indium; a linear, branched or cyclic C1-18 alcohol; and a Group VIII metal catalyst forms a metal film of copper, silver or indium on a substrate when the composition is coated on the substrate and heated to reduce the high-valent compound. The composition may alternatively include metal particles of silver, copper or indium in which the surface layer of the particle includes a high-valent compound of copper, silver or indium. A metal film of copper, silver or indium may also be formed on a substrate by coating a substrate with the composition including the metal particles, and heating to reduce the high-valent compound in the same manner as above.

Abstract: A non-aqueous metal catalytic composition includes (a) a silver complex comprising reducible silver ions, (b) an oxyazinium salt silver ion photoreducing agent, (c) a hindered pyridine, (d) a photocurable component, a non-curable polymer, or combination of a photocurable component and a non-curable polymer, and (e) a photo sensitizer different from all components (a) through (d) in the non-aqueous metal catalytic composition, in an amount of at least 1 weight %. This non-aqueous metal catalytic composition can be used to form silver metal particles in situ during suitable reducing conditions. The silver metal can be provided in a suitable layer or pattern on a substrate, which can then be subsequently subjected to electroless plating to form electrically-conductive layers or patterns for use in various articles or as touch screen displays in electronic devices.

Abstract: An article may include a substrate defining a surface imperfection and a coating deposited over the substrate. The coating does not substantially reproduce the surface imperfection, and the coating comprises mullite and at least one rare earth silicate, rare earth oxide, alumina, boron oxide, alkali metal oxide, alkali earth metal oxide, silicon, barium strontium aluminosilicate, barium aluminosilicate, strontium aluminosilicate, calcium aluminosilicate, magnesium aluminosilicate, or lithium aluminosilicate. In some examples, the coating may be a first coating deposited from a slurry over the substrate, and a second coating may be deposited over the first coating. In other examples, a first coating that substantially reproduces the surface imperfection may be deposited over the substrate, and the coating that does not substantially reproduce the surface imperfection may be deposited over the first coating.

Abstract: Provided are an enamel coating method and apparatus. The enamel coating method includes (a) preprocessing a surface of the metal tube by feeding the metal tube into a preprocessing chamber by an in-feed conveyor; (b) coating the surface of the metal tube with an enamel glaze supplied from an enamel glaze supply nozzle provided inside a coating chamber by feeding the preprocessed metal tube into the coating chamber; and (c) firing the coated metal tube by feeding the coated metal tube into a firing chamber, wherein the (b) coating includes spraying air toward the metal tube by an air spray nozzle provided inside the coating chamber.

Abstract: A fluid chamber device for a reaction unit of a redox device, includes at least one first wall element and at least one second wall element which at least partially delimit a fluid chamber, and a sealing region which closes off the fluid chamber against a fluid exchange, in particular a gas exchange, in relation to a surrounding space. At least one of the wall elements, in an installed state, has at least one sealing contour in the sealing region, which is intended for providing a sealing effect and by means of which a spacing of the at least two wall elements in the sealing region is reduced in relation to a surrounding area of the sealing region.

Abstract: An electrolysis cell, having an anode, a cathode, and a membrane that is situated between the anode and the cathode and contacts the anode via an anode contact area and contacts the cathode via a cathode contact area, wherein the cathode contact area is greater than the anode contact area, the membrane has a surface oriented toward the cathode that is greater than the cathode contact area, and the electrolysis cell has cathodically polarized surfaces that are in direct contact with the electrically conductive water. This invention also relates to a method for operating an electrolysis cell in natural water and a use of such an electrolysis cell for disinfecting water are also proposed.

Abstract: A water electrolysis system includes a water electrolysis apparatus, an electric component, and a casing. The electric component is to operate the water electrolysis apparatus. The casing includes a housing chamber, an electric component chamber, and a buffering chamber. The housing chamber has a first ventilation air inlet to introduce external air into the housing chamber and houses the water electrolysis apparatus. The electric component chamber has a second ventilation air inlet to introduce the external air into the electric component chamber and houses the electric component. The first ventilation air inlet and the second ventilation air inlet are separate from each other. The buffering chamber is in communication with the first ventilation air inlet and the second ventilation air inlet. An air pressure in the buffering chamber is to be maintained at atmospheric pressure.

Abstract: A system and method to generate a concentration gradient eluent flow are described. The concentration gradient eluent flow can include at least two different generants. A liquid can be pumped to an eluent generating device. A first controlling signal can be applied to a first eluent generator to generate a first generant. A second controlling signal can be applied to a second eluent generator to generate a second generant. Either the first and/or the second controlling signal can be varied as a function of time to generate the concentration gradient eluent flow.

Abstract: The invention provides a system and a process that allow for the selective electrochemical conversion of carbon dioxide to carbon monoxide with high energy efficiency, using a cathode comprised of bismuth in combination with an anode such as an anode comprised of platinum. The electrolysis system may be comprised of a single or two compartment cell and may employ an organic electrolyte or an ionic liquid electrolyte. The invention permits the storage of solar, wind or conventional electric energy by converting carbon dioxide to carbon monoxide and liquid fuels.

Abstract: A method recovers an electropositive metal from a metal carbonate. In the method, hydrogen and halogen are combusted to form hydrogen halide. The solid metal carbonate is converted into metal chloride by a gaseous hydrogen halide. In an electrolysis, the metal chloride is decomposed into metal and halogen. The halogen produced in the electrolysis is led out of the electrolysis for combusting. Preferably, the hydrogen halide is produced by combusting the hydrogen and the halogen and the metal carbonate is converted into metal chloride in a fluidized bed reactor. Preferably, lithium is used as the metal.

Abstract: Focused Electric Field Imprinting (FEFI) provides a focused electric field to guide an unplating operation and/or a plating operation to form very fine-pitched metal patterns on a substrate. The process is a variation of the electrochemical unplating process, wherein the process is modified for imprinting range of patterns of around 2000 microns to 20 microns or less in width, and from about 0.1 microns or less to 10 microns or more in depth. Some embodiments curve a proton-exchange membrane whose shape is varied using suction on a backing fluid through a support mask. Other embodiments use a curved electrode. Mask-membrane interaction parameters and process settings vary the feature size, which can generate sub-100-nm features. The feature-generation process is parallelized, and a stepped sequence of such FEFI operations, can generate sub-100-nm lines with sub-100-nm spacing. The described FEFI process is implemented on copper substrate, and also works well on other conductors.

Abstract: The embodiments herein relate to methods and apparatus for electroplating one or more materials onto a substrate. In many cases the material is a metal and the substrate is a semiconductor wafer, though the embodiments are no so limited. Typically, the embodiments herein utilize a channeled plate positioned near the substrate, creating a cross flow manifold defined on the bottom by the channeled plate, on the top by the substrate, and on the sides by a cross flow confinement ring. During plating, fluid enters the cross flow manifold both upward through the channels in the channeled plate, and laterally through a cross flow side inlet positioned on one side of the cross flow confinement ring. The flow paths combine in the cross flow manifold and exit at the cross flow exit, which is positioned opposite the cross flow inlet. These combined flow paths result in improved plating uniformity.

Abstract: To manufacture a chamber component for a processing chamber a first anodization layer is formed on a metallic article with impurities, the first anodization layer having a thickness greater than about 100 nm, and an aluminum coating is formed on the first anodization layer, the aluminum coating being substantially free from impurities. A second anodization layer can be formed on the aluminum coating.

Abstract: A plating apparatus is described. The apparatus includes: a substrate holder configured to hold a substrate in a vertical position; at least one processing bath configured to process the substrate held by the substrate holder; a transporter configured to grip and horizontally transport the substrate holder; at least one lifter configured to receive the substrate holder from the transporter, lower the substrate holder to place the substrate holder in the processing bath, elevate the substrate holder from the processing bath after processing of the substrate, and transfer the substrate holder to the transporter; and a controller configured to control operations of the transporter and the lifter.

Abstract: One embodiment provides an electroplating apparatus, which includes a tank filled with an electrolyte solution, a number of anodes situated around edges of the tank, a cathode situated above the tank, and a plurality of wafer-holding jigs attached to the cathode. A respective wafer-holding jig includes a common connector electrically coupled to the cathode and a pair of wafer-mounting frames electrically coupled to the common connector. Each wafer-mounting frame includes a plurality of openings, and a respective opening provides a mounting space for a to-be-plated solar cell, thereby facilitating simultaneous plating of front and back surfaces of the plurality of the solar cells.

Abstract: The present invention is to provide a substrate holder which can effect a more complete sealing with a sealing member and makes it possible to take a substrate out of the substrate holder easily and securely, and also a plating apparatus provided with the substrate holder. The substrate holder includes: a fixed holding member and a movable holding member for holding a substrate therebetween; a sealing member mounted to the fixed holding member or the movable holding member; and a suction pad for attracting a back surface of the substrate held between the fixed holding member and the movable holding member.

Abstract: Methods and apparatuses for delaminating workpieces are provided. In one or more aspects, a method can include processing or otherwise delaminating the workpiece by separating a delamination stack and a support substrate disposed thereon. The workpiece that can include a sacrificial layer disposed between the delamination stack and the support substrate. The method can include exposing at least a portion of the workpiece to an electrolyte solution, applying an electrical current through the sacrificial layer and the electrolyte solution, selectively removing the electrically conductive or semiconductive material from the sacrificial layer during an etching process, and separating the delamination stack and the support substrate one from the other. The delamination stack can include a process piece that can be one or more wafers or devices (e.g., thin-film devices) or one or more portions of the one or more wafers or devices.

Abstract: The present invention includes a method of producing a segmented 1D nanostructure. The method includes providing a vessel containing a template wherein on one side of the template is a first metal reagent solution and on the other side of the template is a reducing agent solution, wherein the template comprises at least one pore; allowing a first segment of a 1D nanostructure to grow within a pore of the template until a desired length is reached; replacing the first metal reagent solution with a second metal reagent solution; allowing a second segment of a 1D nanostructure to grow from the first segment until a desired length is reached, wherein a segmented 1D nanostructure is produced.

Abstract: A SiC single crystal manufacturing method whereby growing speed improvement required to have high productivity can be achieved, while maintaining flat growth in which uniform single crystal growth can be continued at the time of growing a SiC single crystal using a solution method. In the method, a SiC single crystal is grown in a crucible from a Si solution containing C. The method includes alternately repeating: a high supersaturation degree growing period, in which the growth is promoted by maintaining the supersaturation degree of C in the Si solution higher than an upper limit critical value at which flat growth can be maintained, the supersaturation degree being at a growing interface between the Si solution and a SiC single crystal being grown; and a low supersaturation degree growing period, in which the growth is promoted by maintaining the supersaturation degree lower than the critical value.

Abstract: Direct growth of graphene on Co3O4(111) at 1000 K was achieved by molecular beam epitaxy from a graphite source. Auger spectroscopy shows a characteristic sp2 carbon lineshape, at average carbon coverages from 0.4-3 monolayers. Low energy electron diffraction (LEED) indicates (111) ordering of the sp2 carbon film with a lattice constant of 2.5 (±0.1) ? characteristic of graphene. Six-fold symmetry of the graphene diffraction spots is observed at 0.4, 1 and 3 monolayers. The LEED data also indicate an average domain size of ˜1800 ?, and show an incommensurate interface with the Co3O4(111) substrate, where the latter exhibits a lattice constant of 2.8 (±0.1) ?. Core level photoemission shows a characteristically asymmetric C(1s) feature, with the expected lr to lr* satellite feature, but with a binding energy for the three monolayer film of 284.9 (±0.1) eV, indicative of substantial graphene-to-oxide charge transfer.

Abstract: Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density?100 cm?2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.

Abstract: An epitaxial wafer manufacturing device, including a shield (12), which in addition to being removably attached inside a chamber, is arranged in close proximity to the lower surface of a top plate (3). The shield has a substrate (12a) having an opening (13) in the central portion thereof that forces a gas inlet (9) to face the inside of a reaction space (K), and a thin film (12b) that covers the lower surface of the substrate. The surface of the thin film has the shape of surface irregularities corresponding to fine surface irregularities formed in the lower surface of the substrate. When the shield has undergone thermal deformation as a result of being heated by heating means (8), deposits deposited on the lower surface of the shield are inhibited from falling off by the shape of the surface irregularities.

Abstract: A vapor phase growth apparatus in an embodiment includes: a shower plate in an upper portion of the reaction chamber, the shower plate having first lateral gas flow passages in a first horizontal plane, first longitudinal gas flow passages being connected to the first lateral gas flow passages, the first longitudinal gas flow passages extending in a longitudinal direction, each of the first longitudinal gas flow passages having a first gas ejection hole, the shower plate having second lateral gas flow passages in a second horizontal plane upper than the first horizontal plane, second longitudinal gas flow passages being connected to the second lateral gas flow passages, the second longitudinal gas flow passages extending in the longitudinal direction through between the first lateral gas flow passages, each of the second longitudinal gas flow passages having a second gas ejection hole, and a support unit provided below the shower plate.

Abstract: The present invention addresses the problem of providing a method for synthesizing hexagonal tungsten nitride by synthesizing hexagonal tungsten nitride as a main product, and of providing the hexagonal tungsten nitride. The problem is solved through use of a method for synthesizing hexagonal tungsten nitride comprising synthesizing hexagonal tungsten nitride by heating a starting material powder containing a tungsten halide and an alkali metal nitride and/or an alkaline earth metal nitride.

Abstract: A multi-layered, web-shaped filter material for a filter element may include a fleece layer, a cellulose layer, and a nanofiber layer arranged between the fleece layer and the cellulose layer. The nanofiber layer may be a coating of a nanofiber material disposed on the fleece layer. The cellulose layer may have an impregnation at least on a side facing the nanofiber layer.

Abstract: The present invention provides a method for producing cellulose nanofibers, the method including fibrillating cellulose in a modified epoxy resin (A) having a hydroxyl value of 100 mgKOH/g or more. Also, the present invention provides cellulose nanofibers produced by the production method and a master batch containing the cellulose nanofibers and the modified epoxy resin (A). Further, present invention provides a resin composition containing the master batch and a curing agent (D), and provides a molded product produced by molding the resin composition.