Abstract: The piezoelectric body is configured to have a layered structure such that a plurality of unit layers are stacked in a film thickness direction, and each of the unit layers is formed of a first layer on which the displacement is relatively easy to occur, and a second layer which has a high concentration of Zr as compared with the first layer. In addition, when composition ratio Ti/(Zr+Ti) of Zr to Ti in each of the first layer and the second layer is set as Cr1 and Cr2, the composition ratio of each layer is adjusted so as to satisfy the following conditions (1) to (3): 0.41?Cr1?0.81??(1) 0.1?Cr1?Cr2?0.3??(2) Cr1>Cr2??(3).

Abstract: A vertical Hall effect sensor having three Hall effect regions interconnected in a ring can be operated in a spinning scheme. Each Hall effect region has three contacts: the first Hall effect region includes first, second, and third contacts; the second Hall effect region has fourth, fifth, and sixth contacts, and the third Hall effect region has seventh, eighth, and ninth contacts. Interconnections between the Hall effect regions are provided such that a first terminal is connected to a third contact, a second interconnection is arranged between the second and fourth contacts, a third terminal is connected to the sixth contact, a fourth interconnection is arranged between the fifth and seventh contacts, a fifth terminal is connected to the ninth contact, and a sixth interconnection is arranged between the first and eighth contacts.

Abstract: A storage element including a storage layer configured to hold information by use of a magnetization state of a magnetic material, with a pinned magnetization layer being provided on one side of the storage layer, with a tunnel insulation layer, and with the direction of magnetization of the storage layer being changed through injection of spin polarized electrons by passing a current in the lamination direction, so as to record information in the storage layer, wherein a spin barrier layer configured to restrain diffusion of the spin polarized electrons is provided on the side, opposite to the pinned magnetization layer, of the storage layer; and the spin barrier layer includes at least one material selected from the group composing of oxides, nitrides, and fluorides.

Abstract: An integrated device includes a substrate having a semiconductor surface layer including functional circuitry, a lower metal stack on the semiconductor surface layer, an interlevel dielectric (ILD) layer on the lower metal stack, a top metal layer providing AMR contact pads and bond pads coupled to the AMR contact pads in the ILD layer. An AMR device is above the lower metal stack lateral to the functional circuitry including a patterned AMR stack including a seed layer, an AMR material layer, and a capping layer, wherein the seed layer is coupled to the AMR contact pads by a coupling structure. A protective overcoat (PO layer) is over the AMR stack. There are openings in the PO layer exposing the bond pads.

Abstract: A method for fabricating a semiconductor device includes: forming an inter-layer dielectric layer and a sacrificial layer over a substrate so that the sacrificial layer covers the inter-layer dielectric layer; forming a conductive pattern that is coupled with a portion of the substrate while penetrating through the inter-layer dielectric layer and the sacrificial layer; protruding a first portion of the conductive pattern by removing the sacrificial layer while maintaining a second portion of the conductive pattern inside the inter-layer dielectric layer; oxidizing the protruded first portion of the conductive pattern without oxidizing the second portion of the conductive pattern; removing the oxidized first portion of the conductive pattern to expose a top of the second portion of the conductive pattern; and forming a variable resistance element on top of the conductive pattern to couple a bottom of the variable resistance element with the top of the second portion of the conductive pattern.

Abstract: A variable resistance memory device and a method of manufacturing the same, the device including first conductive lines disposed in a first direction on a substrate, each of the first conductive lines extending in a second direction crossing the first direction, and the first and second directions being parallel to a top surface of the substrate; second conductive lines disposed in the second direction over the first conductive lines, each of the second conductive lines extending in the first direction; a memory unit between the first and second conductive lines, the memory unit being in each area overlapping the first and second conductive lines in a third direction substantially perpendicular to the top surface of the substrate, and the memory unit including a variable resistance pattern; and an insulation layer structure between the first and second conductive lines, the insulation layer structure covering the memory unit and including an air gap in at least a portion of an area overlapping neither the fir

Abstract: Subject matter disclosed herein may relate to fabrication of correlated electron materials used, for example, to perform a switching function. In embodiments, precursors, in a gaseous form, may be utilized in a chamber to build a film of correlated electron materials comprising various impedance characteristics.

Abstract: In one embodiment, a capacitor-like structure is constructed that includes an RF co-sputtered TMO layer. The capacitor-like structure includes a first electrode (e.g., a bottom electrode) constructed of a first metal (e.g., Pt), a RF co-sputtered TMO layer on the first electrode including a first oxide and a second oxide (e.g., a RF co-sputtered Al2O3—NiO layer), and a second electrode constructed of a second metal (e.g., Pt) in contact with the co-sputtered TMO layer. The capacitor-like structure is resistively switchable due to formation and rupture of CFs through the RF co-sputtered TMO layer in response to application of a voltage between the first electrode and the second electrode. The RF co-sputtered TMO layer may be grown using at least one direct oxide target (e.g., a NiO target) in a noble gas (e.g., Ar) atmosphere.

Abstract: An embodiment is a method and apparatus to treat surface of polymer for printing. Surface of a polymer having a surface energy modified for a time period to control a feature characteristic and/or provide a hysteresis behavior. A material is printed on the surface to form a circuit pattern having at least one of the controlled feature characteristic and the hysteresis behavior.

Abstract: An OLED multilayer electroluminescent device includes a cathode, an anode, a light-emitting layer (LEL) disposed therebetween, and charge-transporting layers disposed between (A) the cathode and the light-emitting layer, (B) the anode and the light-emitting layer, or (C) both (A) and (B). The light-emitting layer (LEL) includes a host material and an emitter. The host material includes a high-entropy non-crystallizable molecular glass mixture, which includes hole-transporting capabilities, electron-transporting capabilities, or ambipolar capabilities. The ambipolar capabilities include hole-transporting capabilities and electron-transporting capabilities.

Abstract: Provided are a process for preparing a crystalline organic semiconductor material wherein the conditions of crystallization lead to the formation of crystals at the gas liquid interface having advantageous semiconductor properties, the obtained crystalline organic semiconductor material and the use thereof for the production of organic semiconductor devices, in particular organic field effect transistors and organic solar cells.

Abstract: A method of forming an organic material pattern film, the method including: forming partition walls on a first region of a first layer, the partition walls including a photosensitive compound including a resorcinarene, the resorcinarene including a perfluorocarbon group; forming a second layer including an organic material on a second region of the first layer, the second region being defined by the partition walls; removing the partition walls.

Abstract: A method of fabricating a semiconductor device includes depositing a dielectric layer on a substrate and a nanomaterial on the dielectric layer. The method also includes depositing a thin metal layer on the nanomaterial and removing a portion of the thin metal layer from a gate area. The method also includes depositing a gate dielectric layer. The method also includes selectively removing the gate dielectric layer from a source contact region and a drain contact region. The method also includes patterning a gate electrode, a source electrode, and a drain electrode.

Abstract: A method of fabricating a semiconductor device includes depositing a dielectric layer on a substrate and a nanomaterial on the dielectric layer. The method also includes depositing a thin metal layer on the nanomaterial and removing a portion of the thin metal layer from a gate area. The method also includes depositing a gate dielectric layer. The method also includes selectively removing the gate dielectric layer from a source contact region and a drain contact region. The method also includes patterning a gate electrode, a source electrode, and a drain electrode.

Abstract: A display device includes a display area, a test pad, a plurality of first test transistors, and at least one outline. The display area includes pixels coupled to data lines and scan lines. The test pad receives a test signal. The first test transistors are coupled between the data lines of the display area and the test pad. The at least one outline is coupled between one of the first test transistors and the test pad. The at least one outline is located in a non-display area outside the display area.

Abstract: The present invention relates to new semiconducting compounds having at least one optionally substituted azino[1,2,3]thiadiazole moiety. The compounds disclosed herein can exhibit high carrier mobility and/or efficient light absorption/emission characteristics, and can possess certain processing advantages such as solution-processability and/or good stability at ambient conditions.

Abstract: The present invention provides: a p-type organic semiconductor material which is able to be produced easily, while having high planarity in a polymer skeleton; and a photoelectric conversion layer, a photoelectric conversion element and an organic thin film solar cell, each of which uses this p-type organic semiconductor material and has high photoelectric conversion efficiency. The present invention specifically provides: a picene derivative which has at least one constituent unit represented by general formula (1); and a photoelectric conversion element which contains (A) the picene derivative serving as a p-type organic semiconductor material and (B) an n-type organic semiconductor material. The details of general formula (1) are as set forth in the description.

Abstract: An ink composition containing a P-type semiconductor material, an N-type semiconductor material and two or more solvents including a first solvent and a second solvent, wherein the total amount of the first solvent and the second solvent is 70% by weight or more with respect to 100% by weight of all the solvents contained in the ink composition; the boiling point of the first solvent is lower than the boiling point of the second solvent; the boiling point of the first solvent is 120° C. or more and 400° C. or less; and the hydrogen bond Hansen solubility parameter H1 (MPa0.5) of the first solvent and the hydrogen bond Hansen solubility parameter H2 (MPa0.5) of the second solvent are in the relation of 0.5?(H2?H1)?5.0.

Abstract: Provided is a compound for an EBL capable of improving the light emitting efficiency, stability and life span of a device, and an organic electric element and an electronic device using the same.

Abstract: Devices containing novel carbazole-containing compounds are provided. The novel compounds also contain electron donor groups, aryl linkers, and at least one nitrogen heterocycle. These novel organic compounds can exhibit delayed fluorescence in the devices.

Abstract: A condensed cyclic compound represented by Formula 1: Ar1-(L1)a1-Ar2??Formula 1 wherein, in Formula 1, Ar1, Ar2, L1, and a1 are the same as described in the specification.

Abstract: The present invention provides a material useful as an organic electroluminescence device material, and particularly provides: a compound having, as a substituent, a substituted aromatic heterocyclic group having a specific structure wherein any of the 1-position to 6-position or the 7-position to 10-position of fluoranthene is substituted with a nitrogen atom; a material for low-voltage organic electroluminescence devices using the compound; and an organic electroluminescence device and an electronic equipment using the material.

Abstract: The present invention relates to electron-deficient heteroaromatic compounds which are substituted by dibenzofuran or dibenzothiophene derivatives and by carbazoles or amines, in particular for use as triplet matrix materials in organic electroluminescent devices. The invention furthermore relates to a process for the preparation of the compounds according to the invention and to electronic devices comprising these compounds.

Abstract: This invention relates to the development of heterocyclic materials for use as blue phosphorescent materials in OLED devices. The materials are based on a pair of 5-membered aromatic or psuedoaromatic rings bonded to one another and complexed to a transition metal. The materials were determined computationally to have appropriate triplet energies for use as blue emitters and to possess sufficient chemical stability for use in devices.

Abstract: Novel iridium complexes containing phenylpyridine and pyridyl aza-benzo fused ligands are described. These complexes are useful as light emitters when incorporated into OLEDs.

Abstract: Metal carbene complexes comprising at least one imidazo-quinoxaline ligand, organic electronic devices, especially OLEDs (Organic Light-Emitting Diodes) which comprise such complexes, a light-emitting layer comprising at least one inventive metal carbene complex, an apparatus selected from the group consisting of illuminating elements, stationary visual display units and mobile visual display units comprising such an OLED, the use of such a metal carbene complex for electrophotographic photoreceptors, photoelectric converters, organic solar cells (organic photovoltaics), switching elements, organic light emitting field effect transistors (OLEFETs), image sensors, dye lasers and electroluminescent devices and a process for preparing such metal carbene complexes.

Abstract: The present invention provides an organometallic complex having a high quantum efficiency even in a polymer thin film as a emitting material for organic electroluminescent (EL) element. The present invention relates to an organoiridium complex for an organic electroluminescent element represented by the following Formula; wherein a C—N ligand including two atomic groups (A1, A2), and a ?-diketone ligand in line symmetry having two tert-butyl-substituted phenyl groups are coordinated with an iridium atom. The organoiridium complex of the present invention has a high quantum efficiency even in a polymer thin film with respect to green to yellow electroluminescence.

Abstract: An organometallic compound represented by Formula 1: M(L1)(L2)??Formula 1 wherein, in Formula 1, M, L1, and L2 are the same as described in the specification.

Abstract: An organometallic compound represented by Formula 1: wherein in Formula 1, groups and variables are the same as described in the specification.

Abstract: Provided is a display device including: a base material; a plurality of light-emitting elements located over a first surface of the base material and having an emission region; and a first trench located over a second surface of the base and overlapping with a non-emission region sandwiched between the emission regions of two adjacent light-emitting elements selected from the plurality of light-emitting elements. Alternatively, the display device includes: a base material; a plurality of pixels located over a first surface of the base material and having a light-emitting element; a first trench located over a second surface of the base material and overlapping with a region sandwiched between two adjacent pixels selected from the plurality of pixels; and a ridge located over the first surface of the base material, overlapping with the first trench, and consisting of the base material.

Abstract: A display device is disclosed. The display device includes a substrate including a first area, a second area, and a first bending area located between the first and second areas. The first bending area is bent about a first bending axis extending in a first direction. The display device also includes a first inorganic insulating layer arranged over the substrate and having a first opening or a first groove at least in the first bending area, an organic material layer filling at least a part of the first opening or the first groove, and a first conductive layer extending from the first area to the second area across the first bending area and located over the organic material layer.

Abstract: A light-emitting device having a curved light-emitting surface is provided. Further, a highly-reliable light-emitting device is provided. A substrate with plasticity is used. A light-emitting element is formed over the substrate in a flat state. The substrate provided with the light-emitting element is curved and put on a surface of a support having a curved surface. Then, a protective layer for protecting the light-emitting element is formed in the same state. Thus, a light-emitting device having a curved light-emitting surface, such as a lighting device or a display device can be manufactured.

Abstract: There is provided a flexible display having a plurality of innovations configured to allow bending of a portion or portions to reduce apparent border size and/or utilize the side surface of an assembled flexible display.

Abstract: An organic thin film transistor (OTFT) is disclosed herein. The OTFT has a substrate, a data line, a transfer pad, a source electrode, a drain electrode, an active pattern, a first insulating layer, a gate electrode, a second insulating layer, and a transparent electrode. The data line and the transfer pad are disposed on the substrate. The source electrode and the drain electrode are disposed on the substrate, the data line, and the transfer pad. The active pattern is disposed on the data line, the transfer pad, the substrate, the source electrode, and the drain electrode. With the disposition of the active pattern on the source electrode and the drain electrode, the source electrode and the drain electrode are free from the bombardment of the plasma.

Abstract: Disclosed herein is a nanocrystal comprising a core comprising a first nanocrystal material, the first nanocrystal material including a Group II-VI semiconductor compound or a Group III-V semiconductor compound; a shell being disposed upon a surface of the core and comprising a second nanocrystal material, the second nanocrystal material being different from the first nanocrystal material and including a Group II-VI semiconductor compound or a Group III-V semiconductor compound; and an alloy interlayer disposed between the core and the shell, wherein the emission peak wavelength of the nanocrystal is shifted into a shorter wavelength than the emission peak wavelength of the core.

Abstract: Provided is a light-emitting element with high external quantum efficiency and a low drive voltage. The light-emitting element includes a light-emitting layer which contains a phosphorescent compound and a material exhibiting thermally activated delayed fluorescence between a pair of electrodes, wherein a peak of a fluorescence spectrum and/or a peak of a phosphorescence spectrum of the material exhibiting thermally activated delayed fluorescence overlap(s) with a lowest-energy-side absorption band in an absorption spectrum of the phosphorescent compound, and wherein the phosphorescent compound exhibits phosphorescence in the light-emitting layer by voltage application between the pair of electrodes.

Abstract: An organic light emitting display device comprises first and second electrodes facing each other on a substrate; and three emission portions arranged between the first electrode and the second electrode, wherein at least one among the three emission portions includes two emitting layers, and the first, second and third emission portions being collectively configured as a TOL-FESE (Thickness of Organic Layers between the First Electrode and the Second Electrode) structure in which thicknesses of organic layers between the first electrode and the second electrode are different from one another, each organic layer having a specified thickness that provides the organic light emitting display device having the TOL-FESE structure with improved red efficiency or blue efficiency and minimized color shift rate with respect to a viewing angle, when compared to an organic light emitting display device that lacks the TOL-FESE structure.

Abstract: An electro-optical device includes an element substrate that includes a display region in which a plurality of light emitting elements are arranged in matrix form and a terminal region in which mounting terminals are arranged on an outer side of the display region, a protective substrate that faces a plurality of light emitting element side of the element substrate, and a joining substrate that is joined to the terminal region of the element substrate, and includes a connection terminal. A sealing film, which seals the plurality of light emitting elements, is also formed in the terminal region on the element substrate. The mounting terminal is connected to the connection terminal. Portions in which the sealing film is removed, and which join to the joining substrate in the electro-optical device are present.

Abstract: An electro-optical apparatus includes an element substrate which includes a display region in which a plurality of light emitting elements are arranged in a matrix form, and a terminal region in which mounting terminals are arranged outside the display region; a sealing film which seals the plurality of light emitting elements; and a sealing substrate which is arranged on the element substrate via the sealing film, in which a distance between the sealing substrate and the mounting terminal is equal to or longer than a thickness dimension of the sealing substrate when seen from a surface normal direction of the element substrate.

Abstract: An array substrate, an organic light-emitting diode (OLED) display panel and a display device are provided. The array substrate includes a base substrate; a plurality of organic light-emitting diode (OLED) elements disposed on the base substrate; and a non-conductive layer in contact with the OLED elements, heat-conducting particles being doped in the non-conductive layer.

Abstract: Provided are an OLED device and a method of manufacturing the OLED device that may provide improved luminance uniformity. The disclosed OLED may have a first electrode that has a first sheet resistance Rs, and a second electrode that has a second sheet resistance, wherein the second sheet resistance may be in the range of 0.3Rs-1.3Rs. In addition, the disclosed OLED may have a plurality of equal potential difference between points on a first electrode and a second electrode. The equal potential difference may be provided by a gradient resistance formed on at least one of the electrodes.

Abstract: A problem to be solved of the invention is to provide a package of a liquid composition for an organic electroluminescent device including a phosphorescent material and a solvent with extended storage lifetime, which may be produced with high working efficiency. A solving means of the problem is a package of a liquid composition for an organic electroluminescent device having a liquid composition for an organic electroluminescent device including a phosphorescent material and a solvent, and a container that contains the liquid composition for an organic electroluminescent device, wherein the package of a liquid composition for an organic electroluminescent device has a transmittance of light, that is a wavelength component of from 500 nm to 780 nm, from outside of the package to inside of the container of 15% or less.

Abstract: A method of manufacturing a display apparatus includes providing a substrate, forming a display unit defining an opening portion in a display region over the substrate, forming a thin film encapsulation layer to seal the display unit, forming a touch electrode over the thin film encapsulation layer, forming a touch insulating film covering the touch electrode such that the thin film encapsulation layer and the touch insulating film are sequentially stacked and formed over the substrate in the opening portion, forming a touch contact hole by removing a portion of the touch insulating film to expose a portion of the touch electrode, and removing a portion of the touch insulating film and a portion of the thin film encapsulation layer formed in the opening portion to expose a portion of the substrate during the forming of the touch contact hole.

Abstract: An organic light-emitting display apparatus includes a display substrate and a thin film encapsulation layer on the display substrate. The display substrate includes at least one hole, a thin film transistor, a light-emitting portion electrically connected to the thin film transistor, and a plurality of insulating layers. The light-emitting portion includes a first electrode, an intermediate layer, and a second electrode. The display substrate includes an active area, an inactive area between the active area and the hole, and a plurality of insulating dams. Each insulating dam includes at least one layer. The inactive area includes a first area different from a laser-etched area and a second laser-etched area.

Abstract: Reflection layers are arranged for respective pixels with predetermined intervals in a row direction (X direction) and a column direction (Y direction) in a display region, and, subsequently to the display region, are arranged in the same manner with the predetermined intervals in the row direction (X direction) and the column direction (Y direction) also in a peripheral region around the display region. First electrodes, first light path adjusting layers, and second light path adjusting layers are arranged for the respective pixels in the display region, and are arranged so as to correspond to the respective reflection layers also in the peripheral region. The respective reflection layers are partially connected to each other in the peripheral region and are electrically connected to a second electrode at a cathode potential.

Abstract: A display unit includes: a light-emitting section including a light-emitting element that has a first electrode, an organic layer including a light-emitting layer, and a second electrode in this order; and a reflector that is provided at a periphery of the light-emitting section to reflect light from the light-emitting section, and has a conductive layer, the conductive layer being electrically coupled to the second electrode of the light-emitting element.

Abstract: A method of manufacturing an organic light emitting diode display panel, including forming a lower substrate, the lower substrate including a first area and a second area; forming an organic light emitting device on the lower substrate; disposing a polymer network liquid crystal on the organic light emitting device; forming a second optical layer in the second area, the second optical layer including the polymer network liquid crystal; and varying an optical property of the polymer network liquid crystal so as to form a first optical layer in the first area. The optical property of the polymer network liquid crystal in the first optical layer differs from the optical property of the polymer network liquid crystal in the second optical layer.

Abstract: The present teachings relate to an organic electroluminescent transistor with improved light-emission characteristics. More specifically, the present organic electroluminescent transistor has an emissive ambipolar channel including at least one layer of an n-type semiconductor material, at least one layer of a p-type semiconductor material, and at least one layer of an emissive material arranged between the layers of the p-type and n-type semiconductor materials, where the multilayer emissive ambipolar channel includes, among various layers, a layer of a p-type semiconductor material comprising a benzothieno-benzothiophene compound, and/or a layer of an emissive material comprising a blend material that includes an organic carbazole derivative as the host matrix compound and an iridium complex as the guest emitter.

Abstract: The present teachings relate to an organic electroluminescent transistor with improved light-emission characteristics. More specifically, the present organic electroluminescent transistor has an emissive ambipolar channel including at least one layer of an n-type semiconductor material, at least one layer of a p-type semiconductor material, and at least one layer of an emissive material arranged between the layers of the p-type and n-type semiconductor materials, with the n-type semiconductor material comprising an electron-transporting compound represented by formula (N-1): where X, Ar, Ar?, R1, R2, m and m? are as defined herein.

Abstract: Provided is a structure of a pouch which may be used in a high-capacity battery having high capacity and high stiffness, wherein the pouch may include an upper housing module which includes a metallic base plate having a concave-shaped accommodation space and polymer layers formed on one surface or both surfaces of the base plate, and a lower pouch sheet which is combined with a lower surface of the upper housing module to seal the accommodation space.