Abstract: A method and structure for providing a GAA device. In some embodiments, a substrate including an insulating layer disposed thereon is provided. By way of example, a first metal portion is formed within the insulating layer. In various embodiments, a first lateral surface of the first metal portion is exposed. After exposure of the first lateral surface of the first metal portion, a first graphene layer is formed on the exposed first lateral surface. In some embodiments, the first graphene layer defines a first vertical plane parallel to the exposed first lateral surface. Thereafter, in some embodiments, a first nanobar is formed on the first graphene layer, where the first nanobar extends in a first direction normal to the first vertical plane defined by the first graphene layer.

Abstract: A semiconductor device and method of manufacturing same are described. A first hafnium oxide (HfO2) layer is formed on a substrate. A titanium (Ti) layer is formed over the first hafnium oxide layer. A second hafnium oxide layer is formed over the titanium layer. The composite device structure is thermally annealed to produce a high-k dielectric structure having a hafnium titanium oxide (HfxTi1-xO2) layer interposed between the first hafnium oxide layer and the second hafnium oxide layer.

Abstract: The characteristics of a semiconductor device are enhanced. In a semiconductor device (MISFET) having a gate electrode GE formed on a nitride semiconductor layer CH via a gate insulating film GI, the gate insulating film GI is configured to have a first gate insulating film (oxide film of a first metal) GIa formed on the nitride semiconductor layer CH and a second gate insulating film (oxide film of a second metal) GIb. And, the second metal (e.g., Hf) has lower electronegativity than the first metal (e.g., Al). By thus making the electronegativity of the second metal lower than the electronegativity of the first metal, a threshold voltage (Vth) can be shifted in a positive direction. Moreover, the gate electrode GE is configured to have a first gate electrode (nitride film of a third metal) GEa formed on the second gate insulating film GIb and a second gate electrode (fourth metal) GEb.

Abstract: A high electron mobility transistor (HEMT) includes a first III-V compound layer and a second III-V compound layer disposed on the first III-V compound layer and is different from the first III-V compound layer in composition. A source feature and a drain feature are disposed on the second III-V compound layer. A p-type layer is disposed on a portion of the second III-V compound layer between the source feature and the drain feature. A gate electrode is disposed on the p-type layer. A capping layer is disposed on the second III-V compound layer.

Abstract: Semiconductor structures are provided. The semiconductor structure includes a substrate and a gate structure formed over the substrate. In addition, a sidewall of the gate structure has a top portion having a first inclination, a middle portion having a second inclination, and a bottom portion having a third inclination, and the first inclination, the second inclination, and the third inclination are different from one another.

Abstract: Some embodiments of the present disclosure relates to a method of forming a semiconductor device having a strained channel and an associated device. In some embodiments, the method includes performing a first etching process by selectively exposing a substrate to a first etchant to produce a recess defined by sidewalls and a bottom surface of the substrate. An implantation process is performed to form an etch stop layer along the bottom surface. A second etching process is performed by exposing the sidewalls and the bottom surface defining the recess to a second etchant to form a source/drain recess. The source/drain recess laterally extends past the etch stop layer in opposing directions. A semiconductor material is formed within the source/drain recess.

Abstract: An embodiment includes a device comprising: first and second fins adjacent one another and each including channel and subfin layers, the channel layers having bottom surfaces directly contacting upper surfaces of the subfin layers; wherein (a) the bottom surfaces are generally coplanar with one another and are generally flat; (b) the upper surfaces are generally coplanar with one another and are generally flat; and (c) the channel layers include an upper material and the subfin layers include a lower III-V material different from the upper III-V material. Other embodiments are described herein.

Abstract: A thin film forming apparatus includes: an injector, the injector including: a distributor including a first distribution portion connected to a first gas inlet, and a second distribution portion connected to a second gas inlet; and a guide connected to the distributor, the guide including a first outlet connected to the first distribution portion, and a second outlet connected to the second distribution portion, wherein the second outlet is disposed above the first outlet.

Abstract: A thin film transistor (TFT) structure is provided herein, which comprises a substrate, a light-shielding resin, a polysilicon, a gate electrode insulator, a gate electrode, an interlayer dielectric layer, a source electrode, and a drain electrode. The light-shielding resin has functions of light-shielding and insulation. With doping through two through holes at two sides, the manufacturing process is simplified, the exposure process is simplified, the production time is shortened, the usage of masks is decreased, and the production cost is lowered.

Abstract: Embodiments of the disclosure provide a method for fabricating a lightly doped drain area, a thin film transistor, and a thin film transistor array substrate. In an embodiment of the disclosure, a poly-silicon layer, a gate insulation layer, and a gate metal layer are formed in sequence on a substrate; the gate metal layer is patterned to form a gate electrode; the gate insulation layer is etched to form a stepped structure, wherein a width of the gate electrode is smaller than a width of the stepped structure, and an edge of the stepped structure is not covered by the gate electrode; and the poly-silicon layer is doped by an ion doping process using the gate electrode and the gate insulation layer with the stepped structure as a mask to form both a lightly doped area and a heavily doped area.

Abstract: In a method for forming a device, a (110) silicon substrate is etched to form first trenches in the (110) silicon substrate, wherein remaining portions of the (110) silicon substrate between the first trenches form silicon strips. The sidewalls of the silicon strips have (111) surface orientations. The first trenches are filled with a dielectric material to from Shallow Trench Isolation (STI) regions. The silicon strips are removed to form second trenches between the STI regions. An epitaxy is performed to grow semiconductor strips in the second trenches. Top portions of the STI regions are recessed, and the top portions of the semiconductor strips between removed top portions of the STI regions form semiconductor fins.

Abstract: A method of fabricating a fin field-effect transistor (FinFET) device is provided. The method includes forming a carbon-based layer on a plurality of gate structures formed on a semiconductor substrate. Each gate structure overlies at least one fin formed on the semiconductor substrate. The carbon-based layer covers sidewalls of the gate structures. A metal silicide layer overlies the carbon-based layer. The metal silicide layer and carbon-based layer are removed, and a metal layer is formed between adjacent gate structures.

Abstract: A semiconductor device comprises a fin structure disposed over a substrate; a gate structure disposed over part of the fin structure; a source/drain structure, which includes part of the fin structure not covered by the gate structure; an interlayer dielectric layer formed over the fin structure, the gate structure, and the source/drain structure; a contact hole formed in the interlayer dielectric layer; and a contact material disposed in the contact hole. The fin structure extends in a first direction and includes an upper layer, wherein a part of the upper layer is exposed from an isolation insulating layer. The gate structure extends in a second direction perpendicular to the first direction. The contact material includes a silicon phosphide layer and a metal layer.

Abstract: A method for forming layers suitable for a V-NAND stack is disclosed. Specifically, the method may include multiple cycles for forming an oxide and a nitride in order to form an oxynitride layer.

Abstract: A method for fabricating a metal oxide thin film transistor comprises the steps of: selecting a substrate and fabricating a gate electrode on the substrate; growing a layer of dielectric or a high permittivity dielectric on the substrate, and allowing the layer of dielectric or high permittivity dielectric to cover the gate electrode to serve as a gate dielectric layer; growing a metal layer on the gate dielectric layer; fabricating a channel in the middle position of the metal layer; anodizing the metal of the channel at atmospheric pressure and room-temperature; fabricating an active region comprising a source, a drain, and the channel; depositing a silicon nitride layer on the active region and forming two contact holes of the electrodes on the silicon nitride layer; and depositing a layer of aluminum film and fabricating two metal contact electrodes of the thin film transistor.

Abstract: A manufacturing method of a semiconductor device in which the threshold voltage is adjusted is provided. The semiconductor device includes a first semiconductor, an electrode electrically connected to the first semiconductor, a gate electrode, and an electron trap layer between the gate electrode and the first semiconductor. By performing heat treatment at higher than or equal to 125 ° C. and lower than or equal to 450 ° C. and, at the same time, keeping a potential of the gate electrode higher than a potential of the electrode for 1 second or more, the threshold voltage is increased.

Abstract: A bipolar junction transistor layout structure includes a first emitter including a pair of first sides and a pair of second sides, a pair of collectors disposed at the first sides of the first emitter, and a pair of bases disposed at the second sides of the first emitter. The first sides are perpendicular to the second sides. The first emitter is disposed in between the pair of collectors and in between the pair of bases.

Abstract: Embodiments provide a method for manufacturing a bipolar junction transistor, comprising: providing a semiconductor substrate comprising a buried layer of a first conductive type; doping the semiconductor substrate in a collector implant region, to obtain a collector implant of the first conductive type extending parallel to a surface of the semiconductor substrate and from the surface of the semiconductor substrate to the buried layer; providing a base layer of a second conductive type on the surface of the semiconductor substrate, the base layer covering the collector implant; providing a sacrificial emitter structure on the base layer, wherein a projection of an area of the sacrificial emitter structure is enclosed by an area of the collector implant; and partially counter doping the collector implant through an area of the base layer surrounding an area of the base layer that is covered by the sacrificial emitter structure.

Abstract: A semiconductor device according to an embodiment includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, a third semiconductor layer of the first conductivity type, a fourth semiconductor layer of the second conductivity type, a first electrode connected to the second semiconductor layer and the fourth semiconductor layer, a second electrode facing the second semiconductor layer with an insulating film interposed, a fifth semiconductor layer of the second conductivity type, a sixth semiconductor layer of the first conductivity type, a seventh semiconductor layer of the second conductivity type, a third electrode connected to the fifth semiconductor layer and the seventh semiconductor layer, and a fourth electrode facing the fifth semiconductor layer with an insulating film interposed.

Abstract: Transistors and methods of forming the same include forming a fin having an active layer between two sacrificial layers. A dummy gate is formed over the fin. Spacers are formed around the dummy gate. The dummy gate is etched away to form a gap over the fin. Material from the two sacrificial layers is etched away in the gap. A gate stack is formed around the active layer in the gap. Source and drain regions are formed in contact with the active layer.

Abstract: Transistors and methods of forming the same include forming a fin that has an active layer between two sacrificial layers. Material from the two sacrificial layers is etched away in a region of the fin. A gate stack is formed around the active layer in the region. Source and drain regions are formed in contact with the active layer.

Abstract: A semiconductor device includes a semiconductor substrate configured to include a channel, a gate supported by the semiconductor substrate to control current flow through the channel, a first dielectric layer supported by the semiconductor substrate and including an opening in which the gate is disposed, and a second dielectric layer disposed between the first dielectric layer and a surface of the semiconductor substrate in a first area over the channel. The gate may be configured to include a lateral overhang that is separated from an upper surface of the first dielectric layer.

Abstract: An exemplary quantum dot device can be provided, which can include, for example, at least three conductive layers and at least two insulating layers electrically insulating the at least three conductive layers from one another. For example, one of the conductive layers can be composed of a different material than the other two of the conductive layers. The conductive layers can be composed of (i) aluminum, (ii) gold, (iii) copper or (iv) polysilicon, and/or the at least three conductive layers can be composed at least partially of (i) aluminum, (ii) gold, (iii) copper or (iv) polysilicon. The insulating layers can be composed of (i) silicon oxide, (ii) silicon nitride and/or (iii) aluminum oxide.

Abstract: An SGT production method includes a first step of forming a fin-shaped semiconductor layer and a first insulating film; a second step of forming a second insulating film, depositing a first polysilicon, planarizing the first polysilicon, forming a third insulating film, forming a second resist, and etching the third insulating film, the first polysilicon, the second insulating film, and the fin-shaped semiconductor layer to form a pillar-shaped semiconductor layer, a first dummy gate, and a first hard mask; and a third step of forming a fourth insulating film, depositing a second polysilicon, planarizing the second polysilicon, subjecting the second polysilicon to etch back to expose the first hard mask, depositing a sixth insulating film, etching the sixth insulating film to form a second hard mask on a side wall of the first hard mask, and etching the second polysilicon to form a second dummy gate.

Abstract: A method for manufacturing a semiconductor device is provided, including forming a plurality of fins on a semiconductor substrate, and forming source/drain regions on the fins. The source/drain regions have an uneven surface with a mean surface roughness, Ra, of about 10 nm to about 50 nm. A smoothing layer is formed on the source/drain regions filling the uneven surface. An etch stop layer is formed overlying the smoothing layer. A portion of the etch stop layer is removed to expose a portion of the smoothing layer. The exposed smoothing layer is removed, and a contact layer is formed on the source/drain regions.

Abstract: Various methods for fabricating non-planar integrated circuit devices, such as FinFET devices, are disclosed herein. An exemplary method includes forming a rib structure extending from a substrate; forming a two-dimensional material layer (including, for example, transition metal dichalcogenide or graphene) on the rib structure and the substrate; patterning the two-dimensional material layer, such that the two-dimensional material layer is disposed on at least one surface of the rib structure; and forming a gate on the two-dimensional material layer. In some implementations, a channel region, a source region, and a drain region are defined in the two-dimensional material layer. The channel region is disposed between the source region and the drain region, where the gate is disposed over the channel region. In some implementations, the patterning includes removing the two-dimensional material layer disposed on a top surface of the substrate and/or disposed on a top surface of the rib structure.

Abstract: A trench MOSFET with closed cell layout having shielded gate is disclosed, wherein closed gate trenches surrounding a deep trench in each unit cell and the shielded gate disposed in the deep trench. Trenched source-body contacts are formed between the closed gate trenches and the deep trench. The deep trench has square, rectangular, circle or hexagon shape.

Abstract: A high-voltage semiconductor device is provided. The device includes a semiconductor substrate having a first conductivity type, and a first doping region having a second conductivity type therein. An epitaxial layer is on the semiconductor substrate. A body region having the first conductivity type is in the epitaxial layer on the first doping region. A second doping region and a third doping region that have the second conductivity type are respectively in the epitaxial layer on both opposite sides of the body region, so as to adjoin the body region. Source and drain regions are respectively in the body region and the second doping region. A field insulating layer is in the second doping region between the source and drain regions. A gate structure is on the epitaxial layer to cover a portion of the field insulating layer.

Abstract: The present disclosure provides a semiconductor device including a substrate, a first well and a second well formed in the substrate, the first well being doped with dopants of a first conductivity type and the second well being doped with dopants of a second conductivity type, a third well within the first well, a gate structure partially formed over the first and second wells, and a first epi region on the third well and a drain region electrically coupled to the second well, the first epi region being doped with dopants of the second conductivity type.

Abstract: Techniques relate to forming a vertical field effect transistor (FET). One or more fins are formed on a bottom source or drain of a substrate, and one or more fins extend in a vertical direction. Gate material is formed to be positioned on sides of the one or more fins. Gate encapsulation material is formed on sides of the gate material to form a trench, such that top portions of the one or more fins are exposed in the trench. A top source or drain is formed on top of the one or more fins such that the top source or drain is laterally confined by the trench in a lateral direction that is parallel to the one or more fins.

Abstract: A method of fabricating a vertical field effect transistor is provided as follows. A fin structure having a sidewall is formed on a substrate. A lower spacer, a gate pattern and an upper spacer surround a lower sidewall region, a center sidewall region and an upper sidewall region, respectively. The lower spacer, the gate pattern and the upper spacer are vertically stacked on each other along the sidewall of the fin structure. To form the lower spacer, a preliminary spacer layer is formed to surround the lower sidewall region of the fin structure; a doped region and an undoped region are formed in the preliminary spacer layer by doping partially impurities in the preliminary spacer using a directional doping process; and the undoped region of the preliminary spacer layer is removed so that the doped region of the preliminary spacer layer remains to form the lower spacer.

Abstract: A method of fabricating a fin field effect transistor (FinFET) is provided as follows. A fin structure is formed on a substrate. A gate pattern and a source/drain (S/D) electrode are formed on the fin structure. The gate pattern and the S/D electrode are spaced apart from each other. A blocking layer is on the fin structure to cover the gate pattern and the S/D electrode. A sacrificial pattern is formed on the blocking layer and between the gate pattern and S/D electrode. The sacrificial pattern has a first thickness and a first width. A capping layer is formed on the sacrificial layer. An air gap is formed by removing the sacrificial layer through the capping layer. The air gap is formed between the gate pattern and the S/D electrode and has the first thickness and the first width.

Abstract: A semiconductor device includes an active fin on a substrate, a gate structure on the active fin, a gate spacer structure directly on a sidewall of the gate structure, and a source/drain layer on a portion of the active fin adjacent the gate spacer structure. The gate spacer structure includes a silicon oxycarbonitride (SiOCN) pattern and a silicon dioxide (SiO2) pattern sequentially stacked.

Abstract: A semiconductor device is provided. The semiconductor device includes a drain region and a source region spaced apart from each other, a semiconductor pattern disposed between the drain region and the source region and comprising a first region and a second region, wherein a thickness of the first region is larger than a thickness of the second region, and the first region is disposed between the drain region and the second region, and a gate electrode intersecting the semiconductor pattern.

Abstract: A semiconductor device which includes a thin film transistor having an oxide semiconductor layer and excellent electrical characteristics is provided. Further, a method for manufacturing a semiconductor device in which plural kinds of thin film transistors of different structures are foamed over one substrate to form plural kinds of circuits and in which the number of steps is not greatly increased is provided. After a metal thin film is formed over an insulating surface, an oxide semiconductor layer is formed thereover. Then, oxidation treatment such as heat treatment is performed to oxidize the metal thin film partly or entirely. Further, structures of thin film transistors are different between a circuit in which emphasis is placed on the speed of operation, such as a logic circuit, and a matrix circuit.

Abstract: A transistor panel includes a channel region including an oxide of a first metal, a source region and a drain region, each including the first metal, wherein the channel region is disposed between the source and drain regions, and wherein the channel region is connected to the source and drain regions, an insulation layer disposed on the channel region, an upper electrode disposed on the insulation layer, an interlayer insulation layer disposed on the upper electrode, the source region and the drain region, and a barrier layer including a first portion disposed between the interlayer insulation layer and each of the source and drain regions, wherein the first portion of the barrier layer contacts each of the source and drain regions. The upper electrode and the barrier layer each comprise a second metal.

Abstract: Provided is a semiconductor device which has a double-gate structure with a channel layer made of an oxide semiconductor and is capable of inhibiting the occurrence of hysteresis. A TFT having a double-gate structure with a channel layer 40 made of an oxide semiconductor uses a passivation film (70), which is a film stack obtained by stacking, sequentially from the side closest to the channel layer (40), a silicon oxide film (71), a first silicon nitride film (73), and a second silicon nitride film (74). In this case, the second silicon nitride film (74) farthest from the channel layer (40) is formed so as to have a higher hydrogen content than the first silicon nitride film (73) closer to the channel layer (40).

Abstract: A method for fabricating a transistor is provided. The method includes providing a semiconductor substrate; and forming at least a nanowire suspending in the semiconductor substrate. The method also includes forming a channel layer surrounding the nanowire; and forming a contact layer surrounding the channel layer. Further, the method includes forming a trench exposing the channel layer and surrounding the channel layer in the contact layer; and forming a potential barrier layer on the bottom of the trench and surrounding the channel layer. Further, the method also includes forming a gate structure surrounding the potential barrier layer and covering portions of the contact layer; and forming a source and a drain region on the contact layer at two sides of the gate structure, respectively.

Abstract: A complementary metal oxide semiconductor (CMOS)-integrated junction field effect transistor (JFET) has reduced scale and reduced noise. An exemplary JFET has a substrate layer of one dopant type with a gate layer of that dopant type disposed on the substrate, a depletion channel of a second dopant type disposed on the first gate layer, and a second gate layer of the first dopant type disposed on the depletion channel and proximate a surface of the transistor. The second gate layer can separate the depletion channel from the surface, and the depletion channel separates the first gate layer from the second gate layer.

Abstract: A bolometer. In one embodiment a graphene sheet is configured to absorb electromagnetic waves. The graphene sheet has two contacts connected to an amplifier, and a power detector connected to the amplifier. Electromagnetic power in the evanescent electromagnetic waves is absorbed in the graphene sheet, heating the graphene sheet. The power of Johnson noise generated at the contacts is proportional to the temperature of the graphene sheet. The Johnson noise is amplified and the power in the Johnson noise is used as a measure of the temperature of the graphene sheet, and of the amount of electromagnetic wave power absorbed by the graphene sheet.

Abstract: There is to provide a semiconductor device including a light receiving element capable of reducing the manufacturing cost and improving the optical performance of the light receiving element. For example, a p type germanium layer, an intrinsic germanium layer, and an n type germanium layer forming the structure body of a Ge photodiode are formed according to a continuous selective epitaxial growth. An insulating film having an opening portion is formed on the silicon layer of a SOI substrate, and an intrinsic germanium layer is formed bulging from the opening portion to above the insulating film. In short, by using the insulating film having the opening portion, the cross section of the intrinsic germanium layer is formed into a mushroom shape.

Abstract: Disclosed is a solar cell module including an n-type crystalline silicon-based solar cell element as a power generation element, in which at least one surface of the n-type crystalline silicon-based solar cell element is encapsulated with a solar-cell encapsulating material including an ethylene•?-olefin copolymer satisfying the following requirements a1) to a4). a1) A content proportion of a structural unit derived from ethylene is in a range of 80 to 90 mol %, and a content proportion of a structural unit derived from an ?-olefin having 3 to 20 carbon atoms is in a range of 10 to 20 mol %. a2) MFR measured under defined conditions is in a range of 0.1 to 50 g/10 minutes. a3) A density, which is measured under defined conditions in a range of 0.865 to 0.884 g/cm3. a4) A Shore A hardness, which is measured under defined conditions is in a range of 60 to 85.

Abstract: The invention relates to a carrier body (1) for solar cells (2). According to the invention, in order to significantly improve the thermal resistivity of the connection between a solar cell (2) and the carrier body (1) or a cooling element, the carrier body (1) is made of a ceramic material having sintered metallization regions (3), at least one solar cell (2) is soldered or sintered onto the carrier body (1) and electrically connected to the metallization regions (3), and the carrier body (1) has ceramic cooling elements.

Abstract: A rear contact heterojunction solar cell and a fabricating method. The solar cell comprises a silicon substrate having a passivating layer and an intrinsic amorphous silicon layer. At a back side of the intrinsic amorphous silicon layer, an emitter layer and a base layer are provided. Interposed between these emitter and base layers is a separation layer comprising an electrically insulating material. This separation layer as well as the base layer and emitter layer may be generated by vapour deposition. Due to such processing, adjacent regions of the emitter layer and the separating layer and adjacent regions of the base layer and the separating layer partially laterally overlap in overlapping areas in such a way that at least a part of the separating layer is located closer to the substrate than an overlapping portion of the respective one of the emitter layer and the base layer.

Abstract: Methods and systems for all wrap around porous silicon formation are provided herein. In some embodiments, a substrate holder used for all wrap around porous silicon formation may include a body having a tapered opening along a first edge of the body, wherein the tapered opening is configured to release byproduct gases produced during porous silicon formation on a substrate supported by the substrate holder, a first vacuum channel formed in the body and extending to a first surface of the body, and a first sealing element disposed on the first surface of the body and fluidly coupled to the first vacuum channel, where in the first sealing element supports the substrate when disposed thereon.

Abstract: The performances of a semiconductor device are improved. A method for manufacturing a semiconductor device includes the steps of: providing a semiconductor substrate having a gettering layer formed by ion implanting a cluster, and an epitaxial layer; subjecting the semiconductor substrate to a heat treatment at 800° C. or more, and thereby forming a hydrogen adsorption site; forming an element isolation film at the semiconductor substrate, to be performed thereafter; implanting an impurity for forming a first semiconductor region in the semiconductor substrate; implanting an impurity for forming a second semiconductor region; and performing a heat treatment for a photodiode, to be performed thereafter.

Abstract: A method of making a semiconductor device includes forming a semiconductor material stack having a sodium at an atomic concentration greater than 1×1019/cm3, depositing a transparent conductive oxide layer over the semiconductor material stack, such that sodium atoms diffuse from the semiconductor material stack into the transparent conductive oxide layer, and contacting a physically exposed surface of the transparent conductive oxide layer with a fluid to remove sodium from the transparent conductive oxide layer.

Abstract: The present invention relates to a nano-scale light-emitting diode (LED) element for a horizontal array assembly, a manufacturing method thereof, and a horizontal array assembly including the same, and more particularly, to a nano-scale LED element for a horizontal array assembly that can significantly increase the number of nano-scale LED elements connected to an electrode line, facilitate an arrangement of the elements, and implement a horizontal array assembly having a very good electric connection between an electrode and an element and a significant high quantity of light when a horizontal array assembly having the nano-scale LED elements laid in a length direction thereof and connected to the electrode line is manufactured, a manufacturing method thereof, and a horizontal array assembly including the same.

Abstract: A method of fabricating an ultraviolet (UV) light emitting device includes receiving a UV transmissive substrate, forming a first UV transmissive layer comprising aluminum nitride upon the UV transmissive substrate using a first deposition technique at a temperature less than about 800 degrees Celsius or greater than about 1200 degrees Celsius, forming a second UV transmissive layer comprising aluminum nitride upon the first UV transmissive layer comprising aluminum nitride using a second deposition technique that is different from the first deposition technique, at a temperature within a range of about 800 degrees Celsius to about 1200 degrees Celsius, forming an n-type layer comprising aluminum gallium nitride layer upon the second UV transmissive layer, forming one or more quantum well structures comprising aluminum gallium nitride upon the n-type layer, and forming a p-type nitride layer upon the one or more quantum well structures.

Abstract: The present disclosure relates to a method for manufacturing a semiconductor light emitting device, a semiconductor device including the supporting substrate, and a method for manufacturing the supporting substrate, in which the method includes: providing a first substrate having a first face and a second face opposite to the first face; forming a groove in the first substrate in a direction from the first face to the second face; forming a conducting part in the groove; bonding a second substrate to the first face of the first substrate; and forming, on the second face, a first conducting pad to be in electrical communication with the conducting part.