Abstract: A photosensor for the detection of infrared radiation in the wavelength range of 1 to 1000 micrometers consists of a semiconductor substrate with a highly doped interaction volume for the incoming radiation. At the edge of this highly doped region, an extended gate electrode is placed consisting of a conducting material on top of an insulating layer. On the other side of the gate electrode, another highly doped semiconductor region is placed, acting as a charge collector. Through free carrier absorption in the interaction volume, incoming photons impart their energy on mobile charge carriers. In the case of free electrons, the gate electrode is biased slightly below the reset voltage of the interaction volume, so that the electrons carrying the additional energy of the absorbed photons can predominantly make the transition from the interaction volume across the gate electrode area to the charge collector volume.

Abstract: The electric conductor connection method of the invention is a method for electrical connection between a mutually separated first electric conductor and second electric conductor, comprising a step of hot pressing a metal foil, a first adhesive layer formed on one side of the metal foil and a first electric conductor, arranged in that order, to electrically connect and bond the metal foil and first electric conductor, and hot pressing the metal foil, the first adhesive layer or second adhesive layer formed on the other side of the metal foil, and the second electric conductor, arranged in that order, to electrically connect and bond the metal foil and the second electric conductor.

Abstract: A thin film transistor array substrate and a method for manufacturing the same are disclosed. The thin film transistor array substrate includes a plurality of pixel units defined by a cross structure of gate lines with data lines and power lines on a substrate. Each of the pixel units includes a driving unit, which includes a switching thin film transistor and a driving thin film transistor receiving a signal from the gate line, the data line, and the power line, and a capacitor storing a signal; and a light emitting unit emitting light on a pixel electrode receiving a driving current from the driving thin film transistor. Each of a plurality of shielding patterns is positioned under the switching thin film transistor and the driving thin film transistor of the pixel unit.

Abstract: A light-emitting device is provided. The light-emitting device comprises a substrate; an insulating layer on the substrate, wherein the insulating layer comprises a first hole; a light-emitting stack on the insulating layer and comprising an active region comprising a top surface, wherein the top surface comprises a first part and a second part; and an opaque layer covering the first part of the top surface and exposing the second part of the top surface, wherein the second part is directly above the first hole.

Abstract: A quantum dot having core-shell structure, including a core formed of ZnOzS1-z of wurtzite crystal structure of hexagonal crystal system; a first shell covering the core, and formed of AlxGayIn1-x-yN of wurtzite crystal structure of hexagonal crystal system; and a second shell covering the first shell, and formed of ZnOvS1-v of wurtzite crystal structure of hexagonal crystal system. At least one of v, x, y, and z is not zero and is not one; differences between the lattice constants along a-axis of the core, the first shell and the second shell are not greater than 1%; and the core, the first shell and the second shell form band offset structure of type II.

Abstract: A patterned surface for improving the growth of semiconductor layers, such as group III nitride-based semiconductor layers, is provided. The patterned surface can include a set of substantially flat top surfaces and a plurality of openings. Each substantially flat top surface can have a root mean square roughness less than approximately 0.5 nanometers, and the openings can have a characteristic size between approximately 0.1 micron and five microns. One or more of the substantially flat top surfaces can be patterned based on target radiation.

Abstract: Embodiments are related to integrated circuit (IC) fabrication and, more particularly, to a fluidic assembly process for the placement of light emitting diodes on a direct-emission display substrate.

Abstract: A seed crystal substrate 8 includes a base body 1 and a plurality of rows of stripe-shaped seed crystal layers 3 formed on the base body 1. An upper face 3a of the seed crystal layer 3 is (11-22) plane, a groove 4 is formed between the adjacent seed crystal layers 3, and a longitudinal direction of the groove 4 is a direction in which a c-axis of a crystal forming the seed crystal layer is projected on the upper face. A nitride of a group 13 element is formed on the seed crystal substrate.

Abstract: A light emitting device can include a GaN layer having a multilayer structure that can include an n-type layer, an active layer, and a p-type layer, the GaN layer having a first surface and a second surface; a conductive structure on the first surface of the GaN layer, the conductive structure includes a first electrode in contact with the first surface of the GaN layer, the first electrode is configured to reflect light from the active layer back through the second surface of the GaN layer; and a metal layer including Au, in which the metal layer serves as a first pad; a second electrode on the second surface of the GaN layer; and a second pad on the second electrode, in which a thickness of the second pad is about 0.5 ?m or higher.

Abstract: Disclosed is a semiconductor light emitting device including: multiple semiconductor layers including a first semiconductor layer, a second semiconductor layer, and an active layer; an electrode electrically connected with the multiple semiconductor layers; a light absorption barrier disposed about at least the electrode; and a non-conductive reflective film adapted to cover the multiple semiconductor layers, the light absorption barrier and the electrode and to reflect light from the active layer, wherein the non-conductive reflective film has an abnormal region of a lower reflectivity around the electrode due to a height difference between the light absorption barrier and the electrode, wherein a portion of the non-conductive reflective film exposed from the electrode is made longer than the abnormal region as seen in a cross-sectional view of the electrode.

Abstract: A semiconductor light emitting device includes a conductive substrate and a first metal layer disposed on the substrate. The first metal layer is formed so as to be electrically connected with the substrate, and the first metal layer includes an Au based material. A joining layer is formed on the first metal layer. The joining layer includes a second metal layer including Au and a third metal layer including Au. A metallic contact layer and an insulating layer are formed on the joining layer. A semiconductor layer is formed on the metallic contact layer and the insulating layer and includes a red-based light emitting layer. An electrode is formed on the semiconductor layer and is made of metal. The insulating layer includes a patterned aperture, and at least a part of the metallic contact layer is formed in the aperture.

Abstract: An LED package structure includes a conductive frame assembly, a reflective housing, an UV LED chip disposed on the conductive frame assembly, and a die-attach adhesive for bonding the UV LED chip to the conductive frame assembly. The reflective housing includes Silicone Molding Compound (SMC) and filler mixed in the SMC. The energy gap of the filler is greater than or equal to 4 eV. The energy gap of the filler thereof can be chosen by the following formulas. When the refractive index difference between the filler and the SMC is less than or equal to 0.2, the energy gap of the filler is satisfied the following formula. E?1240 (nm·eV)/(??150(nm)). When the refractive index difference between the filler and the SMC is greater than 0.2, the energy gap of the filler is satisfied the following formula. E?1240(nm·eV)/(??50(nm)).

Abstract: Disclosed herein are an LED package module capable of lowering the price of manufacture by simply reducing the number of LED packages without decreasing the luminance, and a display device having the same. To this end, in an LED package module according to an exemplary embodiment of the present disclosure and a display device having the same, a plurality of LED packages is mounted on an LED module substrate in a matrix such that the LED packages are oriented in intersecting directions alternately in each of the longitudinal and lateral directions. Consequently, it is possible to increase price competitiveness by simply reducing the number of LED packages without degrading the display quality.

Abstract: In various embodiments, the present invention relates to a plurality of coated primary particles, each primary particle including a primary matrix material and containing a population of semiconductor nanoparticles, wherein each primary particle is provided with a separate layer of a surface coating material. Various methods of preparing such particles are described. Composite materials and light-emitting devices incorporating such primary particles are also described.

Abstract: A phosphor, which is represented by the general formula containing M, Ce, Pr, Si, and N, is provided. M is at least one element selected from the group consisting of La, Y, Tb and Lu. A molar ratio of M is greater than 2.0 and smaller than 3.5. A molar ratio of Ce is greater than 0 and smaller than 1.0. A molar ratio of Pr is greater than 0 and smaller than 0.05. A molar ratio of N is greater than 10 and smaller than 12, under the condition that a molar ratio of Si is set to 6. The phosphor further contains 10 to 10,000 ppm of fluorine.

Abstract: A material for an electronic device includes a substance arranged to emit light in a predetermined range of wavelength upon receiving an excitation energy, wherein the substance includes a plurality of carbon nitride particles and a siloxane material. A method of producing the material and a light emitting device including the material are also described.

Abstract: A phosphor comprising: a chemical composition expressed by the following formula (K1-p, Mp)a(Si1-y, Mny)Fb (M is at least one element selected from the group consisting of Na and Ca, and p satisfies 0?p?0.01, a satisfies 1.5?a?2.5, b satisfies 5.5?b?6.5, and y satisfies 0<y?0.1), Wherein the phosphor satisfies I (2,500-3,000)/I (1,200-1,240)<0.04, when I (1,200-1,240) is an intensity of a highest peak in a range of 1,200-1,240 cm?1 and I (2,500-3,000) is an intensity of a highest peak in a range of 2,500-3,000 cm?1 in an infrared spectrum.

Abstract: Provided is a light emitting module in which an LED device is mounted and power is supplied to the LED device by a gold wire. The light emitting module includes a first resin (sealing material) that seals the gold wire and a second resin (dam wall) that surrounds at least a portion of the outer peripheral of the first resin. The first resin has a lower viscosity and a lower elastic modulus compared to the second resin, and protects the gold wire mechanically and chemically. The second resin suppresses the first resin from being flowed out toward the peripherals, and, as a result, the sealing state of the gold wire by the first resin may be maintained.

Abstract: A light emitting device includes a base, at least one light emitting element, and a light transmissive sealing member. The base has a conductor wiring. The at least one light emitting element is mounted on the base. The at least one light emitting element is electrically connected to the conductor wiring. The light transmissive sealing member includes a light diffusion material. The light transmissive sealing member covers the at least one light emitting element. The light transmissive sealing member has a projection shape. The projection shape has a substantially circular bottom surface facing the base and a height in a light axis direction of the at least one light emitting element. The height is greater than a diameter of the substantially circular bottom surface.

Abstract: A side surface type optical semiconductor device includes a substrate made of an insulating material and having a main surface and a back surface, which face opposite sides to each other in a thickness direction. The substrate includes a first concave portion recessed in the thickness direction and a second concave portion recessed further toward the back surface than the first concave portion, a semiconductor optical element is disposed across the first concave portion and the second concave portion, a hollow portion is formed between the semiconductor optical element and the second concave portion, and the hollow portion is used as a light guide path of the semiconductor optical element.

Abstract: Provided are a light emitting device package and a lighting system including the light emitting device package. The light emitting device package includes a package body, at least one electrode on the package body, a light emitting device on the package body, a reflective structure around the light emitting device on the package body and a lens on the light emitting device and the electrode.

Abstract: A lead frame includes a first electrode, a second electrode, two hanger leads, and an outer frame, and partially forms a box-shaped package which has a first recess for mounting a light emitting element as combined with a support member that supports the first electrode and the second electrode. At least a portion of lower faces of the electrodes, at least a portion of lower faces of the hanger leads, and at least a portion of a lower face of the planned formation area for the support member are coplanarly formed. Lower face corners of the first electrode and the second electrode are rounded while upper face corners of the first electrode and the second electrode are not rounded, and upper face corners of the hanger leads are rounded while lower face corners of the hanger leads are not rounded.

Abstract: Magnetic regions of at least one of chiplet or a receiving substrate are used to permit magnetically guided precision placement of chiplets on the receiving substrate. In some embodiments, a scanning magnetic head can be used to release individual chiplets from a temporary support substrate to the receiving substrate. Structures are provided in which a magnetic moment of a controlled orientation exists between the transferred chiplets and the receiving substrate.

Abstract: A thermoelectric conversion module and a thermoelectric conversion apparatus in which a thermoelectric conversion element can be flexibly attached to heat sources having various shapes in high density are provided. The thermoelectric conversion module includes a first thermoelectric conversion element configured of a cylindrical thermoelectric conversion material having a hollow portion and a second thermoelectric conversion element configured of a thermoelectric conversion material having a different conductive type from that of the first thermoelectric conversion element and fixed in the hollow portion.

Abstract: A thermoelectric device may include first and second insulating substrates. An array of electrically conductive first metallizations may be positioned on one side of the first substrate, and an array of electrically conductive second metallizations may be positioned on a mating side of the second substrate. A plurality of thermoelectric elements may be positioned between the first and second substrates and interconnected together through the first and second metallizations in one of a square shaped network pattern or a delta shaped network pattern.

Abstract: In one embodiment, an apparatus includes a resonant structure having a plate, a drive electrode and a sense electrode. The resonant structure defines an axis substantially orthogonal to a plane defined by the plate when the resonant structure is not excited. The plate is formed from a piezoelectric material. The drive electrode is configured to excite the resonant structure, and the sense electrode is configured to sense a signal in response to rotation of the resonant structure about the axis.

Abstract: An inkjet printing head 1 includes a piezoelectric element 6 having a lower electrode 7, a piezoelectric film 8 formed above the lower electrode 7, and an upper electrode 9 formed above the piezoelectric film 8, a hydrogen barrier film 13 covering an entirety of a side surface of the upper electrode 9 and the piezoelectric film 8, and an interlayer insulating film 14 that has an opening 17 at an upper surface center of the upper electrode 9, is laminated on the hydrogen barrier film 13, and faces the entirety of the side surface of the upper electrode 9 and the piezoelectric film 8 across the hydrogen barrier film 13.

Abstract: A magnetoresistive random-access memory (MRAM) is disclosed. The MRAM device reduces stray magnetic fields generated by magnetic layers of the stack, including a reference layer and magnetic layers of the synthetic antiferromagnetic layer, in a way that reduces their impact on the other layers of the stack, including a free layer and an optional filter layer, which may include a polarizer layer or a precessional spin current magnetic layer. The reduction in stray magnetic fields in the stack increases the electrical and retention performance of the stack by reducing switching asymmetry in the free layer. The reduction in stray magnetic fields also may improve performance of a filter layer, such as a precessional spin current magnetic layer by reducing asymmetry in the dynamic magnetic rotation of that layer.

Abstract: The present invention is directed to a magnetic memory element including a magnetic free layer structure having a variable magnetization direction perpendicular to a layer plane thereof; an insulating tunnel junction layer formed adjacent to the magnetic free layer structure; a first magnetic reference layer comprising cobalt, iron, and boron formed adjacent to the insulating tunnel junction layer; a second magnetic reference layer comprising cobalt separated from the first magnetic reference layer by a molybdenum layer; an iridium layer formed adjacent to the second magnetic reference layer; and a magnetic fixed layer structure formed adjacent to the iridium layer. The magnetic free layer structure includes a first and a second magnetic free layers with a perpendicular enhancement layer interposed therebetween. The first and second magnetic reference layers have a first invariable magnetization direction perpendicular to layer planes thereof.

Abstract: Integrated circuits and methods of producing the same are provided. In an exemplary embodiment, an integrated circuit includes a magnetic tunnel junction with a fixed layer, a total free structure, and a barrier layer between the fixed layer and the total free structure. The total free structure includes a first free layer, a second free layer, and a first spacer layer disposed between the first and second free layers. The first spacer layer is non-magnetic. At least one of the first or second free layers include a primary free layer alloy with cobalt, iron, boron, and a free layer additional element. The free layer additional element is present at from about 1 to about 10 atomic percent. The free layer additional element is selected from one or more of molybdenum, aluminum, germanium, tungsten, vanadium, niobium, tantalum, zirconium, manganese, titanium, chromium, silicon, and hafnium.

Abstract: A method of fabricating a magnetic memory device includes forming an interlayered insulating layer on a substrate, forming a landing pad to pass through the interlayered insulating layer, forming a protection insulating layer on the interlayered insulating layer to cover a top surface of the landing pad, forming a bottom electrode to pass through the protection insulating layer and through the interlayered insulating layer, forming a magnetic tunnel junction layer on the protection insulating layer; and patterning the magnetic tunnel junction layer to form a magnetic tunnel junction pattern on the bottom electrode.

Abstract: A method for manufacturing an OLED display according to an exemplary embodiment comprises: forming a thermosetting adhesive layer having a getter receiving portion on a metal sheet; forming a display unit including a plurality of pixels on a substrate; forming a getter layer at an external side of the display unit on the substrate; adhering the thermosetting adhesive layer and the metal sheet to the substrate so as to locate the getter layer in the getter receiving unit; and hardening the thermosetting adhesive layer. The forming of the thermosetting adhesive layer includes layering a solid thermosetting adhesive sheet which has been patterned so as to have the getter receiving portion on the metal sheet.

Abstract: The present invention relates to a novel electron transfer composition comprising one or more metal ion comprising compound, the use of such electron transfer composition in organic electronic devices, particularly in photodiodes, as well as such organic electronic devices, particularly photodiodes.

Abstract: A polymer comprising a repeat unit of formula (I): wherein R1 in each occurrence is independently H or a substituent; R2 in each occurrence is independently a substituent; and x is 0, 1, 2 or 3. The polymer may be used as a light-emitting polymer in an organic light-emitting device.

Abstract: A condensed cyclic compound represented by Formula 1: wherein in Formula 1, Groups X1 to X3, L11, L12, R11, and R12, and variables a11, a12, b11, b12, c11, and c12 are described in the specification.

Abstract: The present specification provides a polycyclic compound and an organic light emitting device including the same.

Abstract: Provided is an organic light emitting element including: an anode; a cathode; and an organic compound layer formed between the anode and the cathode and including a hole injection layer, a hole transport layer, and an emission layer, in which: the emission layer includes a host and a dopant; the hole transport layer includes a hole transport material having multiple aromatic hydrocarbon skeletons and a single bond for linking the aromatic hydrocarbon skeletons; the hole transport material has a triplet level T1 of 1.8 eV or more; the hole transport material has a hole mobility of 1×10?5 cm2/Vs or more; and the hole transport layer and the emission layer satisfy relationships represented by the following expression (1): |reduction potential of hole transport material|?|reduction potential of host|>0.1 V??(1) and the following expression (2): |HOMO level of hole transport material?HOMO level of host|<0.1 eV??(2).

Abstract: The invention discloses an anthracene-containing derivative, the production process thereof and an organic electroluminescent display device, wherein the anthracene-containing derivative has a general molecular structural formula of Formula I, wherein, R1 group is selected from an aromatic group or a fused aromatic group having a carbon atom number of 6 to 18, R2 group is selected from an amine group. By using the above described anthracene-containing derivative as a green phosphorescent host material, a green fluorescent host material, a hole injection material, or a hole transporting material in an organic electroluminescent display device, the light emitting efficiency and the light emitting brightness of the organic electroluminescent display device may be improved.

Abstract: The present application relates to spirobifluorene derivatives of a formula (I), to the use thereof in electronic devices, and to processes for preparing said derivatives.

Abstract: Disclosed are an organic compound represented by a combination of a moiety represented by Chemical Formula 1 and a moiety represented by Chemical Formula 2, an organic optoelectronic device and a display device including the organic compound.

Abstract: A compound represented by formula (1): wherein *a, *b, R1, X1, L1, L2, n, A1, and A2 are as defined in the description, and a production method of the compound represented by formula (1) are provide. In the production method, A1 is introduced under a reaction condition in which the reactivity of Hal2 in a compound represented by formula (I): wherein *c, *d, R1, X1, L1, L2, n, A1, A2, Hal1, and Hal2 are as defined in the description, is extremely low as compared with that of Hal1 and then A2 which is different from A1 is introduced under a reaction condition in which the reactivity of Hal2 is high. The compound represented by formula (1) is formed into a layer by a coating method and meets various performance requirements of an organic EL device.

Abstract: The present invention relates to boron compounds for use in electronic devices, especially organic electroluminescent devices, and to a process for preparing these compounds and to electronic devices, especially organic electroluminescent devices, comprising these compounds.

Abstract: Provided are an organic semiconductor material having a high charge mobility, oxidation stability, and solvent solubility, an organic semiconductor device using the same, and a novel aromatic heterocyclic compound to be used for the same and a production method therefor. The aromatic heterocyclic compound is represented by the following general formula (1), has two heteroatoms, and has a structure in which six rings are fused. In the formula, X represents an oxygen atom or N—R, and R represents hydrogen or a monovalent substituent. The organic semiconductor material contains the aromatic heterocyclic compound, and is used for an organic semiconductor film or an organic device, such as an organic thin-film transistor or an organic photovoltaic device.

Abstract: An organic light-emitting device including a first electrode, a second electrode facing the first electrode, and an organic layer between the first electrode and the second electrode and including an emission layer, wherein the organic layer includes a first compound and a second compound; the first compound is represented by one selected from Formulae 1-1 to 1-4, and does not include a nitrogen-containing heterocyclic group that includes *?N—*? as a ring-forming moiety, and the second compound is represented by Formula 2:

Abstract: A compound that emits fluorescence and delayed fluorescence is provided as a material for an organic electroluminescent device of high efficiency, and an organic photoluminescent device and an organic electroluminescent device of high efficiency and high luminance are provided using this compound. The compound of a general formula (1) having a diazatriphenylene ring structure is used as a constituent material of at least one organic layer in the organic electroluminescent device that includes a pair of electrodes, and one or more organic layers sandwiched between the pair of electrodes.

Abstract: The present specification provides a hetero-cyclic compound and an organic light emitting device including the same.

Abstract: The present specification provides a heterocyclic compound and an organic light emitting device using the same.

Abstract: An organic EL device includes a pair of electrodes and an organic compound layer between pair of electrodes. The organic compound layer includes an emitting layer including a first material, a second material and a third material, in which singlet energy EgS(H) of the first material, singlet energy EgS(H2) of the second material, and singlet energy EgS(D) of the third material satisfy a specific relationship.

Abstract: Disclosed are a compound for an organic optoelectric device represented by Chemical Formula 1, a composition for an organic optoelectric device, an organic optoelectric device including the same, and a display device. Details of Chemical Formula 1 are the same as those defined in the specification.

Abstract: According to one embodiment, a compound comprising a ligand LA of Formula I is described. In the structure of Formula I, A1 through A8 are independently carbon or nitrogen, with at least one being nitrogen; X1 is selected from the group consisting of O, S, and Se; X2 and X3 are independently selected from the group consisting of C, N, O, P, and S; ring A is a 5- or 6-membered heterocyclic ring bonded to ring B through a X2—C bond and bonded to M through a metal-carbene bond; any adjacent substitutions in R1 and R2 are optionally linked together to form a ring; the ligand LA is coordinated to a metal M; and the ligand LA is optionally linked with other ligands to comprise up to a hexadentate ligand. Formulations and devices, such as an OLEDs, that include the compound comprising ligand LA of formula I are also described.