Abstract: A load related to a scanning line is decreased and a load related to a common electrode is decreased without decrease in an aperture ratio of each pixel. A display apparatus has a red sub-pixel and a green sub-pixel. A distance in the Y-axis direction between a pedestal electrode and a scanning line that drives a transistor in a plan view in the red sub-pixel is longer than a distance in the Y-axis direction between a pedestal electrode and a scanning line that drives a transistor in a plan view in the green sub-pixel. Furthermore, a superposed width of a light shielding film with a red pixel region in the Y-axis direction is larger than a superposed width of the light shielding film with a green pixel region in the Y-axis direction.

Abstract: A display device including: a lead wiring layer pattern 207, made from metal, that extends outside a light emission region on a substrate; a passivation layer 216 covering the lead wiring layer pattern, a contact hole 216a in the passivation layer outside the light emission region; a connecting wiring layer pattern 237 that is continuous across the passivation layer, an inner circumference of the contact hole, and the lead wiring layer pattern in the contact hole; an electrically-conductive sealing layer pattern 217 on the connecting wiring layer pattern, covering a portion of the connecting wiring layer pattern in the contact hole; an electrically-conductive upper sealing layer pattern 219 covering and in contact with a portion of the sealing layer pattern; and a contact prevention layer pattern 218, 236 between the electrically-conductive upper sealing layer pattern and a periphery of the sealing layer pattern.

Abstract: A thin film transistor array panel is provided as follows. A gate electrode is disposed on a substrate. A semiconductor layer is disposed on the gate electrode. A gate insulating layer is disposed between the gate electrode and the semiconductor layer. A source electrode is disposed on a first side of the semiconductor layer, having a first lateral surface. A drain electrode is disposed on a second side of the semiconductor layer, having a second lateral surface. The first and second lateral surfaces define a spacing which overlaps the gate electrode. A metal suicide layer is disposed on the first and second lateral surfaces. A passivation layer is disposed on the metal silicide layer, the source electrode and the drain electrode. The passivation layer is not in contact with the first and second lateral surfaces.

Abstract: An electro-optic apparatus includes an element substrate, a pixel region including a first and second pixel formed on the element substrate, a first terminal formed on the element substrate, a second terminal formed on the element substrate, located opposite of the pixel region with the first terminal being interposed between the pixel region and the second terminal, a first wiring extending from the first terminal included in a path for transmitting to the first pixel, a first signal having been input to the first terminal and a second wiring extending from the second terminal included in a path for transmitting to the second pixel, a second signal having been input to the second terminal. Further, a difference between a resistance of the path for transmitting the first and second signal is made smaller than a resistance difference due to a difference between a length of the first and second wiring.

Abstract: The present invention provides a method for bonding pins in OLB area, by forming via holes on the planarization layer of the OLB area corresponding to each pin, the subsequently formed connection wires connecting the pins through the via holes above the pins so that the corresponding pins being connected by the connection wires. As the connection wires completely cover the via holes above the pins, the problem of residual conductive material in the via holes during forming the connection wires does not occur. Compared to the known technology opening a large area on the planarization layer of the OLB area, the present invention avoids the conductive material residual at the bottom of the via hole on the planarization layer and related short circuit and poor display problems.

Abstract: A display device includes a substrate including a first planarization region and a second planarization region inclined at a predetermined angle with respect to the first planarization region. A display device further includes a first wiring disposed in the second planarization region. A display device additionally includes a flexible film bonded with the substrate in the first planarization region and the second planarization region and connected to the first wiring in the second planarization region.

Abstract: An array substrate and a fabrication method thereof, and a display panel are provided. The array substrate includes: a base substrate; an isolation layer on the base substrate; and a first thin film transistor on the isolation layer and a first gate line extending in a gate line direction, wherein the first thin film transistor includes a first gate electrode and a first active layer, the isolation layer includes a protrusion portion which extends in the gate line direction and protrudes upwards with respect to the base substrate, and each of orthogonal projections of the first active layer and the first gate electrode of the first thin film transistor on the main surface of the base substrate is overlapped with an orthogonal projection of the first lateral surface of the protrusion portion on the main surface of the base substrate.

Abstract: Disclosed is a TFT substrate manufacturing method, which first forms a pixel electrode, a data line, and source/drain terminals on a base plate and then forms a channel protection layer and an oxide semiconductor layer; or alternatively first forming a buffer layer on the base plate to prevent characteristics of a TFT from being affected by direct contact between an oxide semiconductor layer and the base plate, and then forming the oxide semiconductor layer directly after formation of source/drain terminals so as to save one etch stopper layer, thus preventing damages induced in the oxide semiconductor layer by an etching operation of the source/drain terminals; and further, through forming a protective layer that covers a surface of a gate terminal to protect the gate terminal from corrosion at the same time of forming a common electrode, formation of an insulation protective layer can be saved.

Abstract: A display device comprising a first substrate and a second substrate opposing one another, a thin film transistor and a color filter disposed on the first substrate, a planarization layer disposed on the thin film transistor and the color filter and a light blocking portion disposed on the planarization layer, the light blocking portion defining a pixel area, wherein the planarization layer comprises a first protrusion and a second protrusion, wherein the first protrusion is disposed in an area in which the light blocking portion is disposed, wherein the second protrusion is spaced apart from the first second protrusion, and wherein the light blocking portion comprises a first light blocking pattern disposed on the first protrusion, and the first light blocking pattern contacts the second substrate.

Abstract: An image system with a dual layer photodiode structure is provided for processing color images. In particular, the image system can include an image sensor that can include photodiodes with a dual layer photodiode structure. In some embodiments, the dual layer photodiode can include a first layer of photodiodes (e.g., a bottom layer), an insulation layer disposed on the first layer of photodiodes, and a second layer of photodiodes (e.g., a top layer) disposed on the insulation layer. The first layer of photodiodes can include one or more suitable pixels (e.g., green, blue, clear, luminance, and/or infrared pixels). Likewise, the second layer of photodiodes can include one or more suitable pixels (e.g., green, red, clear, luminance, and/or infrared pixels). An image sensor incorporating dual layer photodiodes can gain light sensitivity with additional clear pixels and maintain luminance information with green pixels.

Abstract: An image sensor may include a substrate having photoelectric conversion regions respectively formed on a plurality of pixels and charge trap regions overlapping with the respective photoelectric conversion regions and having depths or thicknesses that are different, for each of the respective pixel.

Abstract: A method is presented for fabricating an array of sensors on an object having a non-developable surface. The method includes: growing an epitaxial structure on a substrate; bonding, without the use of an adhesive, the epitaxial structure to a flexible membrane to form a device structure; forming an array of sensors from the epitaxial structure of the device structure using photolithographic techniques; cutting the device structure into segments; and bonding the segments onto the target object.

Abstract: Fabrication and use of an X-ray detector scan interface having separate enable and reset lines for each line (e.g., row) of pixels is described. In certain implementations, the respective enable and reset lines are connected such that activation of an enable line for a given line of pixels is concurrent with activation of a reset line for a different (e.g., preceding) row of pixels. In this manner, readout of one row of pixels is performed in conjunction with resetting the row of pixels readout in the preceding operation. In another technical implementation, a non-rectangular detector is divided into quadrants, with alternating quadrants configured for scan module or data module operations such that no quadrant has overlapping scan and data interconnections at the connection finger regions.

Abstract: An image sensor array is disclosed. The image sensor array includes: a semiconductor substrate; a lateral photo detector structure over the semiconductor substrate, wherein the lateral photo detector structure has a dislocation trapping region protruding to the semiconductor substrate; and an insulating layer disposed over the lateral photo detector structure and further extending to a space between the lateral photo detector structure and the semiconductor substrate; wherein the lateral photo detector structure includes a first type region and a second type region having a polarity opposite to a polarity of the first type region, and the first type region extends at least along a portion of a boundary between an upside of the intrinsic region and the insulating layer. An associated manufacturing method is also disclosed.

Abstract: A method of manufacturing a solid-state image sensor, including a first transistor for transferring charges from a charge accumulation region to a first charge holding region and a second transistor for transferring charges from the first charge holding region to a second charge holding region, the method comprising forming, on the semiconductor substrate, a resist pattern having a opening on the first charge holding region, and injecting a impurity via the opening so as to make the first charge holding region be a buried type, wherein the impurity is injected such that an impurity region, which makes the first charge holding region be a buried type, is formed at a position away from an end of the gate electrode of the second transistor.

Abstract: There is provided a solid-state imaging device including a substrate having a surface over which a plurality of photodiodes are formed, and a protection film that is transparent, has a water-proofing property, and includes a side wall part vertical to the surface of the substrate and a ceiling part covering a region surrounded by the side wall part, the side wall part and the ceiling part surrounding a region where the plurality of photodiodes are arranged over the substrate.

Abstract: A photoelectric conversion device includes: a first optical filter that has a first pattern periodically having a plurality of structures and is formed of a conductive material film disposed on a first photoelectric conversion element with an insulating film therebetween; and a first optical filter that has a second pattern periodically having a plurality of structures and is formed of a conductive material film disposed on a second photoelectric conversion element with the insulating film therebetween. The interval between the first pattern and the second pattern that are adjacent to each other is longer than a period of the structures in the first pattern and a period of the structures in the second pattern.

Abstract: The invention provides a photosensitive coloring composition comprising a specific combination of a coloring agent, a photopolymerization initiator, and a photopolymerizable component that ensures excellent pattern processability and serves to produce a solid state imaging element with high image quality.

Abstract: An image sensor includes a substrate including a plurality of pixel regions and having a trench between the pixel regions, a photoelectric conversion part in the substrate of each of the pixel regions, and a device isolation pattern in the trench. The device isolation pattern defines an air gap. The device isolation pattern has an intermediate portion and an upper portion narrower than the intermediate portion.

Abstract: An imaging device and a manufacturing method of the imaging device are provided, which can lower the level of a dark current in an optical black pixel without forming a new layer such as a hydrogen diffusion preventing film. Both of an insulating layer over a photodiode arranged over an effective pixel region and an insulating layer over a photodiode arranged over an OB pixel region include silicon nitride, are formed of the same layer, and are coupled with each other.

Abstract: In an imaging device having a waveguide, a surface of an insulating film covering a seal ring is prevented from getting rough. A pixel region, a peripheral circuit region, and a seal region are defined over a semiconductor substrate. After formation of a pad electrode in the peripheral circuit region and a seal ring in the seal ring region, a TEOS film is so formed as to cover the pad electrode and the seal ring. A pattern of a photoresist for exposing a portion of the TEOS film covering the pad electrode and the seal ring, respectively, is formed and etching treatment is subjected to the exposed TEOS film. Then, after the pattern of the photoresist has been formed, a second waveguide holding hole is formed in the pixel region by performing etching treatment.

Abstract: The present disclosure relates to a solid-state imaging device, a method for manufacturing the same, and an electronic device capable of increasing utilization efficiency of a substrate. The solid-state imaging device includes a first semiconductor substrate provided with a sensor circuit having a photoelectric conversion part, and a second semiconductor substrate and a third semiconductor substrate provided with respective circuits different from the sensor circuit. The first semiconductor substrate, the second semiconductor substrate, and the third semiconductor substrate are stacked on each other in three layers, and a metal element for an electrode constituting an electrode for external connection is disposed in the first semiconductor substrate. An electrode for a measuring terminal is disposed within the second semiconductor substrate or the third semiconductor substrate, and the first semiconductor substrate is stacked after performing a predetermined measurement.

Abstract: A solid-state imaging device includes: a first substrate having first photoelectric converters; a second substrate having second photoelectric converters and laminated on the first substrate; micro lenses disposed on an opposite face facing an imaging lens among faces of the second substrate and which forms an image of light passing through the imaging lens; and a light shielding layer disposed between the first and second photoelectric converters. The light shielding layer includes: a selection portion provided with an opening portion which selectively allows passage of only light passing through a partial region of a pupil region in an exit pupil of the imaging lens among light passing through the micro lens and transmitted through the second photoelectric converter; and a light shielding portion which shields an entire light passing through the micro lens and transmitted through the second photoelectric converter.

Abstract: The present invention discloses a CMOS image sensor structure and packaging method thereof. The method includes the following steps: providing an image sensor chip and a transparent package substrate that is ground and cut, the front side of the image sensor chip being provided with an image sensing region and a pad region surrounding the image sensing region; bonding a first end of a metal wire onto the pad, the other end being suspended outside the image sensor chip; bonding the transparent package substrate and the image sensor chip having the metal wire to form an image sensor package, which can be assembled by surface mount technology (SMT) or pressure welding via the exposed and suspended metal wire. In the present invention, an auxiliary substrate is optionally used and an optical glass is directly fixed to the image sensor chip, and the image sensor chip is directly connected to a circuit board.

Abstract: A CMOS imaging system with increased charge storage of pixels yet decreased physical size, kTC noise and active area. A storage node is connected to the transfer gate and provides a storage node for a pixel, allowing for kTC noise reduction prior to readout. The pixel may be operated with the shutter gate on during the integration period to increase the amount of time for charge storage by a pixel.

Abstract: Provided is a light extraction substrate capable of achieving both light extraction efficiency and preservability. Before forming a cap layer, a step of reducing in-membrane water content such that the in-membrane water content of a layer formed between a gas barrier layer and the cap layer is less than 1.0×1015/mg is performed. The in-membrane water content of less than 1.0×1015/mg is maintained until at least a step of forming the cap layer after the step of reducing the in-membrane water content, and the cap layer is then formed through a dry process.

Abstract: An apparatus for positioning micro-devices on a substrate includes one or more supports to hold a donor substrate and a destination substrate, an adhesive dispenser to deliver adhesive on micro-devices on the donor substrate, a transfer device including a transfer surface to transfer the micro-devices from the donor substrate to the destination substrate, and a controller. The controller is configured to operate the adhesive dispenser to selectively dispense the adhesive onto selected micro-devices on the donor substrate based on a desired spacing of the selected micro-devices on the destination substrate. The controller is configured to operate the transfer device such that the transfer surface engages the adhesive on the donor substrate to cause the selected micro-devices to adhere to the transfer surface and the transfer surface then transfers the selected micro-devices from the donor substrate to the destination substrate.

Abstract: A method for fabricating a semiconductor memory device is provided. The method includes: etching a first region of the semiconductor memory device to expose a first capping layer; forming a second capping layer on the first capping layer; etching a portion of the first capping layer and a portion of the second capping layer to form a first trench reaching a first metal line; and forming a second metal line in the first trench to contact the first metal line.

Abstract: A magnetic memory includes a deformable base plate, a spin device element coupled with the deformable base plate and storing a data as a magnetization direction, and a bending mechanism to bend the deformable base plate. At least one of upper and lower surfaces of the deformable base plate faces a space which is not filled with solid substance.

Abstract: An organic light emitting display device reduces a grayscale-based color difference of the organic light emitting display device. The organic light emitting display device includes opposite first and second electrodes on a substrate and a plurality of emission parts between the first and second electrodes. At least one among the plurality of emission parts includes a first emission layer and a second emission layer having different wavelength ranges. A dopant content in the first emission layer is lower than a dopant content in the second emission layer.

Abstract: A display device preventing light leak to an adjacent pixel and thus to prevent color mixing to improve image quality is provided. An organic EL display device includes a plurality of pixels. The plurality of pixels each include a light emitting element; the light emitting element includes a pixel electrode, a common electrode, an EL common layer, and a light emitting layer; the EL common layer and the light emitting layer are provided between the pixel electrode and the common electrode; the EL common layer covers a main surface and an end of the pixel electrode; the pixel electrode is provided on an insulating layer; and the common electrode is in contact with the insulating layer between the plurality of pixels.

Abstract: An organic light-emitting diode display panel for fingerprint recognition includes a plurality of pixel areas arranged in arrays, the pixel area includes a pixel unit and a fingerprint recognition unit, which are adjacent to each other, the pixel unit is configured to emit colorful image light, the fingerprint recognition unit comprises a sensing light emitting module and a sensing light receiving module, the sensing light emitting module is configured to emit sensing light to a finger, and the sensing light receiving module is configured to receive the sensing light reflected by the finger and convert a light signal of the sensing light into an electric signal. An electronic device is also provided.

Abstract: The thickness of a display device including a touch sensor is reduced. Alternatively, the thickness of a display device having high display quality is reduced. Alternatively, a method for manufacturing a display device with high mass productivity is provided. Alternatively, a display device having high reliability is provided. Stacked substrates in each of which a sufficiently thin substrate and a relatively thick support substrate are stacked are used as substrates. One surface of the thin substrate of one of the stacked substrates is provided with a layer including a touch sensor, and one surface of the thin substrate of the other stacked substrate is provided with a layer including a display element. After the two stacked substrates are attached to each other so that the touch sensor and the display element face each other, the support substrate and the thin substrate of each stacked substrate are separated from each other.

Abstract: Provided is a light receiving/emitting element and a light receiving/emitting apparatus that can be easily manufactured and allow high-sensitivity detection. The light receiving/emitting element is configured to include a first organic photoelectric conversion unit and a second organic photoelectric conversion unit that is disposed on the first organic photoelectric conversion unit and is different in spectral sensitivity from the first organic photoelectric conversion unit, wherein one of the first organic photoelectric conversion unit and the second organic photoelectric conversion unit acts as a light receiving unit and the other acts as a light emitting unit. The light receiving/emitting apparatus is configured to have the light receiving/emitting element mounted thereon.

Abstract: An organic light-emitting display apparatus including: a substrate; a display unit having a plurality of organic light-emitting devices on the substrate; an encapsulating layer sealing up the display unit; and a protective layer between the display unit and the encapsulating layer, wherein each of the plurality of organic light-emitting devices includes: a pixel electrode; an intermediate layer on the pixel electrode, the intermediate layer including an organic emission layer; and an opposite electrode on the intermediate layer, and the protective layer includes: a capping layer covering the opposite electrode; and a blocking layer on the capping layer.

Abstract: An organic light emitting diode (OLED) display includes a base substrate, a first electrode on the base substrate, a pixel definition layer on the first electrode and having an opening exposing the first electrode, spacers on the pixel definition layer and having a smaller modulus than the pixel definition layer, an organic emission layer on the first electrode to correspond to the opening, and a second electrode on the organic emission layer.

Abstract: An organic electroluminescent display device for improving light extraction efficiency is provided. A bank has an opening part at a position of a light-emitting surface of OLED. A sealing film is formed along an inside surface of the opening part, which is formed by a bottom surface where the light-emitting surface exists and a sidewall part of the bank rising from the bottom. A light-transmitting film is laminated on the sealing film and covers the opening part. The sidewall part of the bank includes a first sidewall part and a second sidewall part which is higher than the first sidewall part in height from the substrate. An inclination of the second sidewall part is greater than that of the first sidewall part, and a refractive index of the light-transmitting film is smaller than a refractive index of the sealing film in contact with the light-transmitting film.

Abstract: The present invention provides an AMOLED pixel driving circuit and a pixel driving method. By utilizing the dual gate thin film transistor to be the drive thin film transistor, in the pre-charge stage, the preset voltage (Vpre) is written to the bottom gate (BG) of the first thin film transistor (T1), and the power source voltage (VDD) is written to the top gate; in the threshold voltage programming stage, the voltage of the top gate (TG) of the first thin film transistor (T1) drops, and the threshold voltage is raised until the threshold voltage is lifted up to Vth=Vpre?VOLED; in the drive stage, the voltage of the top gate (TG) is kept unchanged to keep the threshold voltage remaining to be Vth=Vpre?VOLED, and the data signal Data drives the first thin film transistor (T1) to be activated to make the organic light emitting diode (D1) emit light.

Abstract: A display device is disclosed. In one aspect, the display device includes a display area including a plurality of pixel circuits arranged in a first direction and a second direction crossing the first direction. The display device also includes a plurality of gate lines extending in the first direction and electrically connected to the pixel circuits, and a gate driver electrically connected to the gate lines and disposed in the display area.

Abstract: There is provided a semiconductor device including a first pixel and a second pixel each including a transistor and an EL element including a pixel electrode electrically connected to the transistor. A ratio of a channel width (W) to a channel length (L) of the transistor in the first pixel is different from a ratio of a channel width (W) to a channel length (L) of the transistor in the second pixel.

Abstract: An electronic device display may have an array of pixel circuits. Each pixel circuit may include an organic light-emitting diode and a drive transistor. Each drive transistor may be adjusted to control how much current flows through the organic light-emitting diode. Each pixel circuit may include one or more additional transistors such as switching transistors and a storage capacitor. Semiconducting oxide transistors and silicon transistors may be used in forming the transistors of the pixel circuits. The storage capacitors and the transistors may be formed using metal layers, semiconductor structures, and dielectric layers. Some of the layers may be removed along the edge of the display to facilitate bending. The dielectric layers may have a stepped profile that allows data lines in the array to be stepped down towards the surface of the substrate as the data lines extend into an inactive edge region.

Abstract: A slim-bezel flexible display device and a manufacturing method thereof are disclosed. A through hole is formed in a first base plate of a lower substrate in an area adjacent to an edge thereof. A conductive connection body is mounted in the through hole. The conductive connection body is connected to a circuit layout layer and a flexible connection circuit that is connected to a drive circuit board so as to have the drive circuit board and the circuit layout layer connected. It is not necessary for the side of the lower substrate associated with the circuit layout layer to provide an additional connection zone for connection with the flexible connection circuit so that an effective display zone of a flexible display device can be enlarged and a bezel area can be reduced.

Abstract: Discussed is an organic light emitting display device in which an auxiliary electrode is disposed on an overcoating layer, and thus, an aperture ratio is enhanced. The organic light emitting display device can include a first overcoating layer disposed on a driving transistor and a supply electrode, a connection electrode disposed on the first overcoating layer and connected to the supply electrode through the second contact hole, a first electrode disposed on the first overcoating layer and connected to the driving transistor through the first contact hole, a second overcoating layer disposed on the first overcoating layer, and an auxiliary electrode disposed on the second overcoating layer and connected to the connection electrode. The first overcoating layer may include a first contact hole and a second contact hole. The second overcoating layer may cover the first and second contact holes and may not cover a portion of the first electrode.

Abstract: An organic light emitting display device and a method of manufacturing the same are provided that may reduce the resistance of a second electrode and may prevent corrosion and metal migration of a pad electrode without adding a separate mask process, or while reducing the number of mask processes. In the organic light emitting display device, an auxiliary line is connected to a second electrode through an auxiliary electrode, which is provided in the same layer as a first electrode, and a pad cover electrode is configured to cover an upper surface and a side surface of a pad connection electrode so as to prevent the pad connection electrode connected to a pad from being exposed outward.

Abstract: A display apparatus including a first conductive layer; a first insulating layer including a first opening exposing a first upper surface of the first conductive layer and covering at least a part of an upper edge of the first conductive layer, wherein the first upper surface of the first conductive layer includes a center portion of an upper surface of the first conductive layer; a second conductive layer on a part of the first upper surface of the first conductive layer and on the first insulating layer; and a second insulating layer including a second opening exposing a second upper surface of the second conductive layer and covering a part of an upper edge of the second conductive layer, wherein the second upper surface of the second conductive layer includes a center portion of the upper surface of the second conductive layer and the second opening has an area that is less than that of the first opening.

Abstract: A display device according to an exemplary embodiment of the present invention includes: a scan line extending in a first direction; a data line crossing the scan line and transmitting a data signal; a driving voltage line crossing the scan line and transmitting a driving voltage; a conductive member including a portion connected to the driving voltage line and overlapping the data line, wherein a first insulation layer is interposed between the conductive member and the data line; and a control line including a plurality of main line portions each extending in the first direction, and a detour portion that is located between two of the plurality of main line portions that are adjacent one another in a plan view, wherein the detour portion connects the two adjacent main line portions together, wherein a part of the detour portion is located between the conductive member and the driving voltage line in the plan view.

Abstract: A display device includes a substrate including a bending area, a display area. A plurality of first wires is disposed above the substrate. A second wire is disposed above the plurality of first wires. A third wire is disposed above the second wire. At least a portion of the second wire and at least a portion of the third wire are disposed in the bending area.

Abstract: A display device includes a first substrate arranged with a plurality of pixels on a first surface, the plurality of pixels having a display element including a transistor, and a first wiring connected to the transistor, a through electrode arranged in a first contact hole reaching the first wiring from a second surface facing the first surface of the first substrate, a second wiring connected with the through electrode, a first insulation film arranged covering the second wiring on the second surface of the first substrate, and a terminal connected with a second wiring via a second contact hole arranged in the first insulation film.

Abstract: An organic light emitting diode display includes a substrate, a semiconductor, a gate electrode, a source electrode connected to a first portion of the semiconductor, a drain electrode connected to a second portion of the semiconductor, and a pixel electrode connected to the drain electrode. Each of the source electrode, the drain electrode, and the pixel electrode includes a barrier metal layer, a low resistance metal layer, a metal oxide layer, and a contact assistant layer disposed between the low resistance metal layer and the metal oxide layer. The source electrode, the drain electrode, and the pixel electrode each have a step shape.

Abstract: An integrated circuit (IC) that includes a circuit substrate having a front side surface and an opposite back side surface. Active circuitry is located on the front side surface. An inductive structure is located within a deep trench formed in the circuit substrate below the backside surface. The inductive structure is coupled to the active circuitry.