Abstract: An imaging sensor system includes a pixel array having a plurality of pixel cells disposed in a first semiconductor layer, where each one of the plurality of pixel cells has a single photon avalanche diode (SPAD) disposed proximate to a front side of a first semiconductor layer. Each of the plurality of pixel cells includes a guard ring disposed in the first semiconductor layer in a guard ring region proximate to the SPAD, and also includes a guard ring region reflecting structure disposed in the guard ring region proximate to the guard ring and proximate to the front side of the first semiconductor layer. The imaging sensor system also includes control circuitry coupled to the pixel array to control operation of the pixel array, and readout circuitry coupled to the pixel array to readout image data from the plurality of pixel cells.

Abstract: A stacked optocoupler component, having a transmitter component with a transmitting area and a receiver component with a receiving area and a plate-shaped electrical isolator. The isolator is formed between the transmitter component and the receiver component, and the transmitter component and the receiver component and the isolator are arranged one on top of another in the form of a stack. The transmitter component and the receiver component are galvanically separated from one another but optically coupled to one another. The isolator is transparent for the emission wavelengths of the transmitter component and the centroidal axis of the transmitting area and the centroidal axis of the receiving area are substantially or precisely parallel to one another.

Abstract: A method of manufacturing a solar cell can include forming a silicon oxide film on a semiconductor substrate and successively exposing the silicon oxide film to a temperature in a range of 570° C. to 700° C. to anneal the silicon oxide film.

Abstract: Photodiode structures and methods of manufacture are disclosed. The method includes forming a waveguide structure in a dielectric layer. The method further includes forming a Ge material in proximity to the waveguide structure in a back end of the line (BEOL) metal layer. The method further includes crystallizing the Ge material into a crystalline Ge structure by a low temperature annealing process with a metal layer in contact with the Ge material.

Abstract: Fabrication of a heterostructure, such as a group III nitride heterostructure, for use in an optoelectronic device is described. The heterostructure can be epitaxially grown on a sacrificial layer, which is located on a substrate structure. The sacrificial layer can be at least partially decomposed using a laser. The substrate structure can be completely removed from the heterostructure or remain attached thereto. One or more additional solutions for detaching the substrate structure from the heterostructure can be utilized. The heterostructure can undergo additional processing to form the optoelectronic device.

Abstract: A light emitting device includes a semiconductor light emitting unit and a light-transmitting substrate. The light-transmitting substrate includes an upper surface having two long sides and two short sides and a side surface, and the semiconductor light emitting unit is disposed on the upper surface. The side surface includes two first surfaces, two second surfaces, and rough micro-structures. Each of the first surfaces is connected to one of the long sides of the upper surface, and each of the second surfaces is connected to one of the short sides of the upper surface. The rough micro-structures are formed on the first surfaces and the second surfaces, a covering rate of the rough micro-structures on each of the first surfaces is greater than or equal to a covering rate of the rough micro-structures on each of the second surfaces. A manufacturing method of the light emitting device is also provided.

Abstract: A device including one or more layers with lateral regions configured to facilitate the transmission of radiation through the layer and lateral regions configured to facilitate current flow through the layer is provided. The layer can comprise a short period superlattice, which includes barriers alternating with wells. In this case, the barriers can include both transparent regions, which are configured to reduce an amount of radiation that is absorbed in the layer, and higher conductive regions, which are configured to keep the voltage drop across the layer within a desired range.

Abstract: A device having a layer with a patterned surface for improving the growth of semiconductor layers, such as group III nitride-based semiconductor layers with a high concentration of aluminum, is provided. The patterned surface can include a substantially flat top surface and a plurality of stress reducing regions, such as openings. The substantially flat top surface can have a root mean square roughness less than approximately 0.5 nanometers, and the stress reducing regions can have a characteristic size between approximately 0.1 microns and approximately five microns and a depth of at least 0.2 microns. A layer of group-III nitride material can be grown on the first layer and have a thickness at least twice the characteristic size of the stress reducing regions.

Abstract: An LED die includes a substrate, a pre-growth layer, a first insulating layer and a light emitting structure. The pre-growth layer, the first insulating layer and the light emitting structure are formed on the structure that order. The substrate includes a first electrode, a second electrode and an insulating part. The insulating part is formed between the first electrode and the second electrode. The LED die further includes a second insulating layer and a metal layer which are formed around the pre-growth layer. The present disclosure includes a method for manufacturing the LED die.

Abstract: A GaN based semiconductor light-emitting device is provided. The light-emitting device includes a first GaN based compound semiconductor layer of an n-conductivity type; an active layer; a second GaN based compound semiconductor layer; an underlying layer composed of a GaN based compound semiconductor, the underlying layer being disposed between the first GaN based compound semiconductor layer and the active layer; and a superlattice layer composed of a GaN based compound semiconductor doped with a p-type dopant, the superlattice layer being disposed between the active layer and the second GaN based compound semiconductor layer.

Abstract: The present disclosure provides a light-emitting device and manufacturing method thereof. The light-emitting device comprises: a metal connecting structure; a barrier layer on the metal connecting structure, the barrier layer comprising a first metal multilayer on the metal connecting structure and a second metal multilayer on the first metal multilayer; a metal reflective layer on the barrier layer; and a light-emitting stack electrically coupled to the metal reflective layer, wherein the first metal multilayer comprises a first metal layer comprising a first metal material and a second metal layer comprising a second metal material, and the second metal multilayer comprises a third metal layer comprising a third metal material and a fourth metal layer comprising a fourth metal material.

Abstract: An LED module 101 is provided with an LED chip 200 that includes a sub-mount substrate 210 made of Si and a semiconductor layer 220 laminated on the sub-mount substrate 210. The module also includes white resin 280 that does not transmit light from the semiconductor layer 220 and that covers at least part of a side of the sub-mount substrate 210, where the side is connected to the surface on which the semiconductor layer 220 is laminated. These arrangements enhance the brightness of the LED module 101.

Abstract: Semiconductor LED layers are epitaxially grown on a patterned surface of a sapphire substrate. The patterned surface improves light extraction. The LED layers include a p-type layer and an n-type layer. The LED layers are etched to expose the n-type layer. One or more first metal layers are patterned to electrically contact the p-type layer and the n-type layer to form a p-metal contact and an n-metal contact. A dielectric polymer stress-buffer layer is spin-coated over the first metal layers to form a substantially planar surface over the first metal layers. The stress-buffer layer has openings exposing the p-metal contact and the n-metal contact. Metal solder pads are formed over the stress-buffer layer and electrically contact the p-metal contact and the n-metal contact through the openings in the stress-buffer layer. The stress-buffer layer acts as a buffer to accommodate differences in CTEs of the solder pads and underlying layers.

Abstract: A light-emitting diode (LED) structure and a fabrication method thereof effectively enhance external extraction efficiency of the LED, which includes: a light-emitting epitaxial laminated layer, a transparent dielectric layer, and a transparent conductive layer forming a reflectivity-enhancing system; and a metal reflective layer. The light-emitting epitaxial laminated layer has opposite first and second surfaces, and includes an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer. The transparent dielectric layer is on the second surface, inside which are conductive holes. The transparent conductive layer is located on one side surface of the transparent dielectric layer distal from the light-emitting epitaxial laminated layer. The metal reflective layer is located on one side surface of the transparent conductive layer distal from the transparent dielectric layer.

Abstract: A light emitting device includes: a light emitting element including: a semiconductor structure including an n-type semiconductor layer, an active layer, and a p-type semiconductor layer, each containing a nitride semiconductor, a p-electrode disposed on a portion of a surface of the p-type semiconductor layer on a side opposite to a surface provided with the active layer, and an n-electrode disposed on a surface of the n-type semiconductor layer on a side opposite to a surface provided with the active layer in a region other than a region facing the p-electrode; and a protective film continuously covering a surface of the n-electrode and a surface of the n-type semiconductor layer. The protective film includes a first metal oxide film and a second metal oxide film that are alternately layered, the first metal oxide film containing a first metal, and the second metal oxide film containing a second metal.

Abstract: A light emitting device includes a light emitting unit, a light transmissive layer and an encapsulant. The light emitting unit includes a substrate, an epitaxial structure layer disposed on the substrate, and a first electrode and a second electrode disposed on the same side of the epitaxial structure layer, respectively. The light emitting unit is disposed on the light transmissive layer and at least a part of the first electrode and a part of the second electrode are exposed by the light transmissive layer. The encapsulant encapsulates the light emitting unit and at least exposes a part of the first electrode and a part of the second electrode. Each of the first electrode and the second electrode extends outward from the epitaxial structure layer, and covers at least a part of an upper surface of the encapsulant, respectively.

Abstract: The invention provides a lighting device comprising (a) a light converter comprising a light receiving face; and (b) a solid state light source configured to generate a light source light with a photon flux of at least 10 W/cm2 at the light receiving face, wherein the light converter is configured to convert at least part of the light source light into light converter light having a first frequency, wherein the light converter comprises a semiconductor quantum dot in an optical structure selected from a photonic crystal structure and a plasmonic structure, wherein the optical structure is configured to increase the photon density of states in the light converter resonant with the first frequency for reducing saturation quenching, and wherein the quantum dot has a quantum efficiency of at least 80%.

Abstract: An illumination device is manufactured by providing (101) a substrate (1) having a first side (1a), sealingly coupling (106) an at least partially light transmitting cover (2) to the substrate (1) such that an enclosed space (3) is defined by at least the first side (1a) of the substrate (1) and the cover (2), providing a through-hole (4) into the enclosed space (3), and introducing (107) a luminescent material into the enclosed space (3) via the through-hole (4). By hermetically sealing (108) the through-hole (4) after the introduction of the luminescent material, the enclosed space (3) becomes sealed and hence luminescent materials being relatively sensitive to e.g. water and/or oxygen become protected from exposure to the environment.

Abstract: A light emitting device includes a molded package and one or more light emitting components. The molded package includes a recess, two leads, and a molded resin part. A part of the recess is defined by a side wall formed from the molded resin part. At least one of the two leads includes an upper-surface portion exposed from a bottom surface of the recess. The at least one of the two leads includes a groove at an upper surface thereof. The groove is filled with a part of the molded resin part. The part of the molded resin part includes a first portion and a second portion. The first portion is exposed from the bottom surface of the recess. The second portion connects with a bottom surface of the side wall.

Abstract: The light-emitting device includes a base plate, a bonding metal layer, a conductive oxide layer, an epitaxial layer, an insulation layer, a first ohmic contact layer, a second ohmic contact layer, a third ohmic contact layer, and a conductor line. The light-emitting device of the present invention uses the process of providing a conductor line to connect an ohmic contact layer, instead of wire bonding, so that a package process required by wire bonding can be eliminated to thereby reduce the size of the light-emitting device. Further, the light-emitting device, after the formation of the conductor line on the ohmic contact layer, allows for performance of a step of directly bonding to a circuit board so as to reduce the package size and simplify equipment necessary for the package process to thereby further lower down fabrication costs, achieving the effects of simplification of operation and fast fabrication.

Abstract: A light emitting diode chip comprises a light emitting diode chip core and a coating layer. The coating layer covers side surfaces of the light emitting diode chip core. And a display composed of the light emitting diode chips is also provided.

Abstract: A first aspect of the disclosure provides for method of synthesizing bismuth-antimony seleno-telluride thermoelectric nanocrystals. The method may comprise: synthesizing an oxidative chalcogen precursor, the synthesizing including: dissolving a metal in acidic deionized water by reacting the metal with a caustic solution in the deionized water to synthesize a first solution, and adjusting at least one of: pH level or a pE level of the first solution; exposing the oxidative chalcogen precursor to a pnictogen precursor to create nanoseeds; and subjecting the nanoseeds to a microwave thereby synthesizing the bismuth-antimony seleno-telluride thermoelectric nanocrystals.

Abstract: An enhanced electrical yield is achieved with an integrated thermoelectric generator (iTEG) of out-of-plane heat flux configuration on a substrate wafer having hill-top junction metal contacts and valley-bottom junction metal contacts joining juxtaposed ends of segments, alternately p-doped and n-doped, of defined thin film lines of segments of a polycrystalline semiconductor, extending over inclined opposite flanks of hills of a material of lower thermal conductivity than the thermal conductivity of the thermoelectrically active polycrystalline semiconductor, by keeping void the valleys spaces (V) among the hills and delimited at the top by a planar electrically non conductive cover with metal bond pads defined over the coupling surface, adapted to bond with respective hill-top junction metal contacts. The junction metal contacts have a cross sectional profile of low aspect ratio, with two arms or wings overlapping the juxtaposed end portions of the segments.

Abstract: The present invention provides oxide particles having a compositional formula of Pb(ZrxTi1-x)O3, wherein x is 0.46?x?0.6; wherein a size of the particle is from 0.5 to 10 ?m; a porosity of a surface of the particle is 20% or less; and a shape of the particle is any one of a cube, a rectangular parallelepiped, or a truncated octahedron.

Abstract: The disclosed technology generally relates to magnetic memory devices, and more particularly to spin transfer torque magnetic random access memory (STT-MRAM) devices having a magnetic tunnel junction (MTJ), and further relates to methods of fabricating the STT-MRAM devices. In an aspect, a magnetoresistive random access memory (MRAM) device has a magnetic tunnel junction (MTJ). The MTJ includes a magnetic reference layer including CoFeB, a magnetic free layer comprising CoFeB, and a barrier layer including MgO. The barrier layer is interposed between the magnetic reference layer and the magnetic free layer. The barrier layer has a thickness adapted to tunnel electrons between the magnetic reference layer and the magnetic free layer sufficient to cause a change in the magnetization direction of the variable magnetization under a bias. The MTJ further comprises a buffer layer comprising one or more of Co, Fe, CoFe and CoFeB, where the buffer layer is doped with one or both of C and N.

Abstract: In one aspect, a magnetoresistance structure includes a magnetoresistance stack that includes a plurality of layers that includes a first set of one or more magnetoresistance layers and a second set of one or more magnetoresistance layers. The magnetoresistance structure also includes side walls attached to the sides of the first set of one or more magnetoresistance layers and disposed on the second set of one or more magnetoresistance layers.

Abstract: First electrically conductive lines can be formed over a substrate. A two-dimensional array of vertical stacks can be formed, each of which includes a first electrode, an in-process resistive memory material portion, and a second electrode over the first electrically conductive line. The sidewalls of the in-process resistive memory material portions are laterally recessed with respect to sidewalls of the first electrode and the second electrode to form resistive memory material portions having reduced lateral dimensions. A dielectric material layer is formed by an anisotropic deposition to form annular cavities that laterally surround a respective one of the resistive memory material portions. Second electrically conductive lines can be formed on the second electrodes.

Abstract: A resistive random access memory device having a nano-scale tip and a nanowire is provided. A memory array using the same also is provided and fabrication method thereof. A technique is provided for forming a bottom electrode having an upwardly protruding tapered tip structure through etching a semiconductor substrate and a top electrode being formed of a nanowire and a technique forming a resistive random access memory device at a location intersected with each other in order that an area of each memory cell is minimized and that an electric field is focused on the tip of the bottom electrode across the top electrode.

Abstract: Phase change memory materials in a dielectric-doped, antimony-rich GST family of materials which are antimony rich relative to GST-225, are described that have speed, retention and endurance characteristics suitable for storage class data storage A memory device includes an array of memory cells, where each memory cell includes a first electrode and a second electrode coupled to a memory element. The memory element comprises a body of phase change memory material that comprises a combination of Ge, Sb, and Te with a dielectric additive in amounts effective to provide a crystallization transition temperature greater than to 160° C., greater that 170° C. in some effective examples and greater than 190° C. in other effective examples. A controller is coupled to the array, and configured to execute set operations and reset operations for memory cells in the array.

Abstract: A semiconductor structure includes a memory region. A memory structure is disposed on the memory region. The memory structure includes a first electrode, a resistance variable layer, a protection material and a second electrode. The first electrode has a top surface on the memory region. The resistance variable layer has at least a first portion and a second portion. The first portion is disposed over the top surface of the first electrode and the second portion extends upwardly from the first portion. The protection material surrounds the second portion of the resistance variable layer. The protection material is configurable to protect at least one conductive path in the resistance variable layer. The second electrode is disposed over the resistance variable layer.

Abstract: A functional layer forming composition is capable of obtaining a stable film forming property when a liquid phase process is used. A method produces a functional layer forming composition. A method produces an organic EL element. An organic EL device and an electronic apparatus are also described. A functional layer forming composition is used when at least one layer in a functional layer containing an organic material is formed by a liquid phase process, and is characterized in that the composition includes a solid component for forming a functional layer, a first aromatic solvent having an electron withdrawing group, and a second aromatic solvent having an electron donating group, and the boiling point of the second aromatic solvent is higher than the boiling point of the first aromatic solvent.

Abstract: An organic light-emitting display apparatus, including: a first electrode disposed on the substrate; a pixel defining layer covering an edge of the first electrode; a residual layer disposed on the first electrode and the pixel defining layer, the residual layer comprising a fluoropolymer; a first organic functional layer comprising a first light emitting layer disposed on the residual layer on the first electrode; and a second electrode disposed on the first organic functional layer.

Abstract: An organic thin film transistor, a manufacturing method thereof and an array substrate are provided. The manufacturing method of an organic thin film transistor includes: forming an organic semiconductor layer; partially sheltering the organic semiconductor layer, so that a sheltered region and an unsheltered region are formed on the organic semiconductor layer, the sheltered region corresponding to a region where an active layer of the organic thin film transistor needs to be formed; and doping the organic semiconductor layer, so that the organic semiconductor layer in correspondence with the sheltered region is not doped, and the organic semiconductor layer in correspondence with the unsheltered region is doped.

Abstract: The invention relates to novel polymers of benzodithiophene, methods and materials for their preparation, their use as semiconductors in organic electronic (OE) devices, and to OE devices comprising these polymers.

Abstract: The present invention relates to organic copolymers and organic semiconducting compositions comprising these materials, including layers and devices comprising such organic semiconductor compositions. The invention is also concerned with methods of preparing such organic semiconductor compositions and layers and uses thereof. The invention has application in the field of printed electronics and is particularly useful as a semiconducting material for use in formulations for organic thin film transistor (OTFT) backplanes for displays, integrated circuits, organic light emitting diodes (OLEDs), photodetectors, organic photovoltaic (OPV) cells, sensors, memory elements and logic circuits.

Abstract: A polymer includes a first repeating unit and a second repeating unit forming a main chain, the first repeating unit including at least one first conjugated system, and the second repeating unit including at least one second conjugated system and a multiple hydrogen bonding moiety represented by Chemical Formula 1.

Abstract: An encapsulation composition, an encapsulation film including the same, an encapsulation product for organic electronic devices, and a method of manufacturing an organic electronic device are provided. The encapsulation composition can be useful in effectively preventing moisture or oxygen from flowing into the organic electronic device from external environments while realizing transparency when the organic electronic device is encapsulated by the encapsulation composition. Also, the encapsulation film formed of the encapsulation composition can be useful in ensuring mechanical properties such as handling properties and processability, and the organic electronic device whose encapsulation structure is formed by means of the encapsulation film may have improved lifespan and durability, thereby providing an encapsulation product for organic electronic devices showing high reliability.

Abstract: A polymer comprising a first repeating unit represented by Formula 1: wherein, in Formula 1, groups and variables are the same as described in the specification.

Abstract: The present specification relates to an organic light emitting diode.

Abstract: An object is to provide a new fluorene derivative as a good light-emitting material for organic EL elements. A fluorene derivative represented by General Formula (G1) is provided. In the formula, R1 to R8 separately represent a hydrogen atom, an alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted phenyl group, or a substituted or unsubstituted biphenyl group. Further, ?1 to ?4 separately represent a substituted or unsubstituted phenylene group. Ar1 represents a substituted or unsubstituted condensed aromatic hydrocarbon having 14 to 18 carbon atoms forming a ring. Ar2 represents a substituted or unsubstituted aryl group having 6 to 13 carbon atoms forming a ring. Ar3 represents an alkyl group having 1 to 6 carbon atoms or a substituted or unsubstituted aryl group having 6 to 12 carbon atoms. Further, j, m, and n separately represent 0 or 1, and p represents 1 or 2.

Abstract: The present invention suggest a novel compound for improving the capability of injecting and/or transporting a hole in a light-emitting element, and a light-emitting element and an electronic device including the same, and may improve the light-emitting efficiency of the light-emitting element, and increase the lifespan thereof. In addition, the present invention may improve thermal stability (heat resistance) of the light-emitting element.

Abstract: A light-emitting element includes an anode, a cathode, a light-emitting layer which is provided between the anode and the cathode and emits light in a wavelength range of 700 nm or more by conducting electricity between the anode and the cathode, and an electron transport layer which is provided between the light-emitting layer and the cathode, and includes a first electron transport layer located on the cathode side and a second electron transport layer located on the light-emitting layer side, wherein organic materials contained in the light-emitting layer, a hole injection layer, the first electron transport layer, and the second electron transport layer have a glass transition temperature Tg of 135° C. or higher or do not have a glass transition temperature.

Abstract: A photoelectric conversion element includes (a-1) a first electrode 21 and a second electrode 22 disposed apart from each other and (a-2) a photoelectric conversion material layer 30 disposed between the first electrode and the second electrode. The photoelectric conversion material layer contains a substance formed of the following structural formula (1).

Abstract: Disclosed is an organic optoelectric device, including an anode and a cathode facing each other, an emission layer interposed between the anode and the cathode, a hole transport layer interposed between the anode and the emission layer, and a hole transport auxiliary layer interposed between the hole transport layer and the emission layer. The emission layer includes at least one first compound represented by Chemical Formula 1: The emission layer further includes at least one second compound represented by Chemical Formula 2: The hole transport auxiliary layer includes a third compound represented by Chemical Formula 2, the third compound being the same as or different from the second compound.

Abstract: The invention provides a bicarbazole derivative represented by formula (I), wherein A is a group represented by formula (II), and wherein X, Y and Z represent a carbon atom or a nitrogen atom, and at least one of X, Y and Z represent a nitrogen atom. The invention further provides a process for preparing the compound. The invention further provides an organic electroluminescent device comprising the compound. This compound can be used as a phosphorescence host material, a hole-injecting material or a hole-transporting material in an organic electroluminescent device.

Abstract: The present invention relates to a near-ultraviolet stimulated light-emitting compound, and more specifically relates to a fluorescent quinazolinone compound which is stimulated in the near ultraviolet region. The fluorescent quinazolinone compound according to the present invention is colorless in daylight but exhibits a high fluorescent intensity when irradiated with light in the near ultraviolet region. Also, the fluorescent quinazolinone compound can be easily used with printed and plastic molded products since the compound not only has a high degree of light fastness and thermal stability but also high dispersibility.

Abstract: A compound represented by the general formula (1) is useful as a light-emitting material. R1, R3, and R5 each represent a cyano group, or R1, R2, R4, and R5 each represent a cyano group; and the others of R1 to R6 each represent a group represented by any one of the following general formula (4), etc.

Abstract: A condensed cyclic compound and an organic light-emitting device, the condensed cyclic compound being represented by one of the following Formulae 1 or 2:

Abstract: An organic compound represented by Chemical Formula 1 is disclosed. Also a light emitting diode including the organic compound is described.

Abstract: The present invention relates metal complexes and to electronic devices, particularly organic electroluminescent devices containing said metal complexes.