Abstract: A display device include a substrate including a wiring electrode; an adhesive layer disposed on the substrate; a plurality of semiconductor light emitting devices adhered to the adhesive layer, and electrically connected to the wiring electrode; and a phosphor layer disposed to cover the plurality of semiconductor light emitting devices. Further, the phosphor layer includes a plurality of phosphor portions for converting a wavelength of light, and a plurality of partition wall portions formed between the plurality of phosphor portions, and the plurality of partition wall portions are sequentially disposed between the phosphor portions along a first direction and a second direction crossing each other, respectively, and at least one of the sequentially disposed partition wall portions overlaps with at least one of the plurality of semiconductor light emitting devices.

Abstract: A light emitting device is provided. The light emitting device includes a light emitting element, which emits blue light, and a light transmissive member having a first principal face bonded to the light emitting element and a second principal face opposite the first principal face. The light transmissive member has a light transmissive base material and wavelength conversion substances, which are contained in the base material and which absorb the light from the light emitting element and emit light. The wavelength conversion substances are localized in the base material towards the first principal face, and include a first phosphor which emits green to yellow light and a second phosphor which emits red light. The first phosphor is more localized towards the first principal face than the second phosphor. The second phosphor is a manganese-activated fluoride phosphor.

Abstract: The present disclosure provides a method for manufacturing quantum dot color film substrate and quantum dot color film substrate. The method is to form a quantum dot adhesive by mixing a red quantum dot material, a green quantum dot material and a photoinitiator in a thermosetting adhesive. The photoinitiator itself does not destroy fluorescence properties of quantum dot, but the photoinitiator is cleaved and can quenching the fluorescence of quantum dot after UV irradiation. A selective quenching quantum dot layer is obtained after coating a quantum dot adhesive uniformly on a color filter layer, and the light mask is used to irradiate the quantum dot adhesive on the blue sub-pixel region. Free radicals are generated by cleaving photoinitiator and are quenching the quantum dot material directly; the method is capable of meeting requirement of high gamut, simple preparation process and low cost.

Abstract: A light emitting device has a lens, extended to outside of the mounting substrate on which a semiconductor a light emitting element is mounted, and leakage of light is reduced. A light emitting element, a substrate having the light emitting element mounted on its upper surface, and a lens, having a curved upper surface encloses the light emitting element and the upper surface of the substrate is included. From the bottom surface of the lens, a lower surface of the substrate is exposed. In a top view from a perpendicular direction to the upper surface of the substrate, the bottom surface of the lens includes an outer extending portion where the bottom surface is extended to outside of the substrate, and a inclined portion, which inclines with respect to a direction approximately in parallel to the upper surface of the substrate, at an end portion of the outer extending portion.

Abstract: The disclosure provides a silicone resin film comprising a release substrate and a silicone resin coating layer formed by coating a curable silicone resin composition on the release substrate and curing the curable silicon resin composition, wherein the silicone resin composition comprises 10 to 25 parts by weight of linear polysiloxane; 40 to 55 parts by weight of a first silicone resin wherein the first silicone resin have at least following siloxane units represented by the general formulas: R1SiO3/2 and a R22SiO2/2, wherein the molar fraction of R1SiO3/2 unit is present in the range of 0.60 to 0.75 in the general formula; 15 to 30 parts by weight of a second silicone resin; 15 to 25 parts by weight of a Si—H containing polysiloxane; a platinum group metal catalyst and phosphor powder.

Abstract: A light-emitting diode (LED) for emitting emitted light having a particular wavelength, said LED comprising: (a) at least one n-doped layer; (b) at least one p-doped layer; (c) an active region comprising at least one layer of light-emitting material disposed between said at least one n-doped layer and said at least one p-doped layer, said active region having an average refractive index, calculated by averaging the LED's refractive index across the thickness of the active region; and (d) at least one low refractive index layer disposed within said particular wavelength of said active region, said at least one low refractive index layer having a refractive index below said average refractive index and a thickness sufficient to limit light being emitted into a guided mode of said active region to no more than 10% of said emitted light.

Abstract: A side view LED package for a backlight unit includes a package body having a cavity with an inclined inner sidewall, first and second lead frames arranged in the package body, the cavity of the package body exposing a portion of at least one of the first and second lead frames placed in a bottom of the cavity to outside, a light emitting diode chip mounted on the bottom of the cavity to be electrically connected to the first and second lead frames, and a transparent encapsulant arranged in the cavity surrounding the light emitting diode chip. The cavity has a depth larger than a mounting height of the light emitting diode chip and not exceeding six times of the mounting height. The height of the sidewall is shortened to improve beam angle characteristics of emission light, increase light quantity, and prevent a molding defect of the sidewall.

Abstract: To prevent cracks on a sealing glass or a substrate in a LED package in which a light-emitting device is sealed with a sealing glass. The LED package comprises a substrate, a LED mounted on the substrate, and a sealing glass for sealing a LED formed on the substrate. A wiring pattern being connected to an electrode of the LED is formed on the surface of the substrate. A back electrode pattern is formed on the rear surface of the substrate. A columnar via is formed in the substrate. Thus, the wiring pattern on the surface of the substrate and the back electrode pattern on the rear surface of the substrate are electrically connected. A softening point of the substrate is set higher than softening point of the sealing glass.

Abstract: A lead frame includes a plurality of units connected together. Each unit includes a pair of lead portions spaced apart from and opposite to each other. The lead portions are configured to mount a semiconductor element and to be electrically connected to a pair of electrodes of the semiconductor element. Each lead portion includes two hook-shaped portions respectively extending from the lead portion. The hook-shaped portions of one lead portion are arranged to surround tip portions of the hook-shaped portions of the other lead portion respectively, at both sides respective to a center line of the unit.

Abstract: A light source may comprise a thermally conductive frame comprising a base and a faceted portion extending from the base. The faceted portion may comprise a plurality of facets spaced circumferentially thereabout. Additionally, a hollow passageway may extend through the base and axially through the faceted portion. A plurality of LED chips may be arranged on the plurality of facets to provide an emission of light in an arc of 360 degrees.

Abstract: A semiconductor device package and a lighting device including a semiconductor device package are provided. The semiconductor device package may include a substrate, a first electrode module provided on the substrate, a light emitting device provided in a first region of the first electrode module, a second electrode module electrically disconnected from the first electrode module and provided on the substrate, and an insulating reflection layer provided on a circumference of the light emitting device between the first electrode module and the second electrode module and having a polygonal shape.

Abstract: A solderless thermoelectric device is capable of use at higher operating temperatures as compared to conventional low temperature solders thus allowing the thermoelectric device to be used in a Seebeck device, for example. The thermoelectric device forms a fusion layer between a copper metal layer and a semiconductor wafer layer by impregnating and surface coating graphene on the semiconductor wafer and heating, under pressure, the graphene coated semiconductor wafer to create a true metallurgical bond of the layers with superconducting interfaces and good thermoelectric properties.

Abstract: Provided is a gel actuator having generation force comparable to biological muscle at a low voltage, that can be used in various applications as an actuator element. A gel actuator (10) comprises a unit structure composed of a gel layer (14) containing a dielectric polymer material, and an anode (12) and a cathode (16) which sandwich the gel layer (14) in a thickness direction thereof, and a face of the anode (12) facing the gel layer formed into a concave-convex face, a convex part of the concave-convex face touching the gel layer (14), and a concave part thereof being into a gap.

Abstract: An elastic wave device includes elastic wave elements, each including a piezoelectric layer directly or indirectly supported by a supporting substrate and an electrode disposed in contact with the piezoelectric layer, and a highly heat-conductive member stacked on a surface of the supporting substrate, opposite to the surface supporting the piezoelectric layer, in which the thermal conductivity of the supporting substrate is higher than the thermal conductivity of the piezoelectric layer, the coefficient of linear expansion of the supporting substrate is lower than the coefficient of linear expansion of the piezoelectric layer, the highly heat-conductive member has a larger area than the surface of the supporting substrate supporting the piezoelectric layer, and the thermal conductivity of the highly heat-conductive member is higher than that of the piezoelectric layer.

Abstract: A system (10) and a method (200) supply power in high external magnetic fields. Alternating current (AC) line power is converted (202) to isolated power using one or more piezoelectric transformers (18). The flow of AC line power to the piezoelectric transformers (18) is regulated (204) to maintain the isolated power at a predetermined voltage.

Abstract: A piezoelectric energy harvester has a box, a plurality of first arc-shaped metal stands and a plurality of arc-shaped piezoelectric elements. The box has an upper portion, a connection base, a buffer element and a lower portion. The connection base situates between the upper portion and the lower portion. The upper portion movably connects with the lower portion through the buffer element. The plurality of first arc-shaped metal stands situated on a side of the connection base in the box. Each of the arc-shaped piezoelectric elements locates on each of the first arc-shaped metal stands. When an external force applied on the box, the plurality of first arc-shaped metal stands deforms due to the compression from the upper portion and consequently causes the deformation of the arc-shaped piezoelectric elements for generating electricity accordingly.

Abstract: A method for evaluating a piezoelectric film containing a perovskite oxide containing a lead atom, a zirconium atom, and a titanium atom, and the method includes a process of irradiating the piezoelectric film with X-rays to acquire an extended X-ray absorption fine structure (EXAFS) spectrum at the L3 absorption edge of the lead atom, a process of Fourier-transforming the extended X-ray absorption fine structure (EXAFS) spectrum to acquire a radial distribution function, and a process of acquiring the intensity of a first peak having a distance from the lead atom of 1.4±0.2 ?, the intensity of a second peak having a distance from the lead atom of 2.0±0.2 ?, and the intensity of a third peak having a distance from the lead atom of 2.6±0.

Abstract: A Magnetoresistive Tunnel Junction (MTJ) device includes an elongated MTJ structure formed onto a substrate, the MTJ structure including a magnetic reference layer and a tunnel barrier layer. The MTJ device also includes a number of discrete free magnetic regions disposed onto the tunnel barrier layer. The ratio of length to width of the elongated MTJ structure is such that the magnetic field of the magnetic reference layer is pinned in a single direction.

Abstract: Emerging memory chips and methods for forming an emerging memory chip are presented. For example, magnetic random access memory (MRAM) chip magnetic shielding at the device-level is disclosed. The MRAM chip includes a magnetic shield structure that is substantially surrounding a magnetic tunnel junction (MTJ) bit or device of a MTJ array. The magnetic shield may be configured in the form of a cylindrical shield structure or magnetic shield spacer that substantially surrounds the MTJ bit or device. The magnetic shield structure in the form of cylindrical shield structure or magnetic shield spacer may include top and/or bottom plate shield. The magnetic shield structure in various forms and configurations protect the MTJ stack from external or local magnetic fields. This magnetic shielding structure is applicable for both in-plane and perpendicular MRAM chips.

Abstract: A substantially flat bottom electrode for magnetoresistive random access memory (MRAM) devices includes three components: a recessed bulk conductive material such as copper, a conductive liner lining the recess, and a cap layer, wherein the conductive liner is a harder material than the cap layer. The cap layer and the dielectric layer are coplanar having a height differential of less than 3 nanometers. The conductive liner has a lower chemical mechanical planarization removal rate. Also provided are processes for forming the bottom electrode.

Abstract: According to one embodiment, a magnetic memory device includes a metal-containing layer, a first magnetic layer, a second magnetic layer, a first intermediate layer, a third magnetic layer, a fourth magnetic layer, a second intermediate layer, and a controller. The metal-containing layer includes first, second, third, fourth, and fifth portions. The first magnetic layer is separated from the third portion. The second magnetic layer is provided between the first magnetic layer and a portion of the third portion. The first intermediate layer includes a portion provided between the first and second magnetic layers. The third magnetic layer is separated from the fourth portion. The fourth magnetic layer is provided between the third magnetic layer and a portion of the fourth portion. The second intermediate layer includes a portion provided between the third and fourth magnetic layers. The controller is electrically connected with the first portion and the second portion.

Abstract: According to one embodiment, a magnetic element includes a first stacked unit and a third ferromagnetic layer. The first stacked unit includes first and second ferromagnetic layers, and a first non-magnetic layer. The first ferromagnetic layer has a first magnetization. The second ferromagnetic layer is separated from the first ferromagnetic layer in a first direction, and has a second magnetization. The first non-magnetic layer is provided between the first and second ferromagnetic layers. The third ferromagnetic layer is stacked with the first stacked unit in the first direction, and has a third magnetization. 2?NzMs is not less than 0.9 times of a magnetic resonance frequency (Hz) of the third ferromagnetic layer, when the second magnetization is Ms (emu/cc), a demagnetizing coefficient of the second ferromagnetic layer is Nz, and a gyro magnetic constant is ? (Hz/Oe).

Abstract: Embodiments of the present invention describe a method for fabricating a memory device comprising an enlarged space between neighboring bottom electrodes comprising depositing a poly-silicon layer on a substrate depositing a carbon layer above the poly-silicon layer, patterning a photo-resist layer on the carbon layer, depositing a first spacer layer on the photo-resist layer and performing a modified photolithography process on the photo resist layer after etching back the spacer layer creating sidewalls.

Abstract: Embodiments of the present invention provide systems and methods for the fabrication of a crossbar array fabrication of resistive random access memory (RRAM) cells. The array structure contains large grain copper and its alloy or silver and its alloy. A metal cap and spacer are used to protect copper or silver from chemical modifications during memory cell patterning.

Abstract: The present invention discloses an evaporation method and an evaporation device. The evaporation method includes successively providing at least one mask above a base substrate and forming at least one evaporation sub-pattern on the base substrate by an evaporation process so that an evaporation pattern is formed on the base substrate, wherein the evaporation pattern is constituted by the at least one evaporation sub-pattern. As the evaporation pattern finally formed is constituted by the at least one evaporation sub-pattern, only a small number of opening regions are required to be formed on each of the masks used for forming the evaporation sub-patterns compared with the prior art, so that the widths of the shield regions between the adjacent opening regions may be set to be larger.

Abstract: A substrate is for use in manufacturing a display device. The substrate includes a first area that corresponds to pixel positions. The substrate further includes a second area adjacent to the first area. The substrate further includes a first mark disposed in the second area, wherein a first virtual line corresponds to the first mark. The substrate further includes a second mark disposed in the second area and spaced from the first mark, wherein a second virtual line corresponds to the second mark and intersects the first virtual line at a virtual reference point. The substrate further includes an indicator disposed in the second area, spaced from the first mark and the second mark, and corresponding to an opening of a mask, wherein a positional relation between the virtual reference point and a point of the indicator represents a positional relation between the substrate and the mask.

Abstract: A method is provided for photolithographic patterning of an organic layer, comprising: providing a shielding layer on the organic layer; providing a photoresist layer on the shielding layer; illuminating the photoresist layer through a shadow mask; developing the photoresist layer, thereby forming a patterned photoresist layer; performing a first dry etching step using the patterned photoresist layer as a mask, thereby removing at least an upper portion of the photoresist layer and completely removing the shielding layer at locations not covered by the photoresist layer; performing a second dry etching step using the patterned shielding layer as a mask, thereby removing the organic layer at locations not covered by the shielding layer; and removing the shielding layer, wherein removing the shielding layer comprises exposing it to water. A method of the present disclosure may advantageously be used in a process for fabricating organic semiconductor based devices and circuits.

Abstract: Disclosed are a composition for an organic optoelectric device including at least one first compound for an organic optoelectric device represented by Chemical Formula 1; and at least one second compound for an organic optoelectric device including a carbazole moiety represented by Chemical Formula 2, an organic optoelectric device include the same, and a display device. Details of Chemical Formula 1 and Chemical Formula 2 are the same as defined in the specification.

Abstract: A method of fabricating a carbon nanotube based device, including forming a trench having a bottom surface and sidewalls on a substrate, selectively depositing a bi-functional compound having two reactive moieties in the trench, wherein a first of the two reactive moieties selectively binds to the bottom surface, converting a second of the two reactive moieties to a diazonium salt; and reacting the diazonium salt with a dispersion of carbon nanotubes to form a carbon nanotube layer bound to the bottom surface of the trench.

Abstract: Pyrimidine derivatives of the present invention are represented by the following general formula (1), wherein W, X, Y and Z are carbon atoms or nitrogen atoms under the condition that only any one is a nitrogen atom to which none of the groups R6 to R9 are bonded, A and B are single bonds, divalent aromatic hydrocarbon groups or divalent aromatic heterocyclic groups, Ar1 and Ar2 are monovalent aromatic hydrocarbon groups or monovalent aromatic heterocyclic groups, and R1 to R9 are hydrogen atoms, deuterium atoms, fluorine atoms, chlorine atoms, cyano groups, alkyl groups having 1 to 6 carbon atoms, monovalent aromatic hydrocarbon groups or monovalent aromatic heterocyclic groups. The compound excels in electron injection/transporting capability, features high hole-blocking power and high stability in the form of a thin film, and can be favorably used as a material for producing highly efficient and durable organic EL devices.

Abstract: An organic light-emitting device including: a first electrode; a second electrode facing the first electrode; and an organic layer between the first electrode and the second electrode and including an emission layer, wherein the organic layer includes: i) a hole transport region between the first electrode and the emission layer, and including at least one selected from a hole injection layer, a hole transport layer, an emission auxiliary layer, and an electron blocking layer, and ii) an electron transport region between the emission layer and the second electrode and including an electron transport layer, in addition to at least one selected from a hole blocking layer, an electron control layer, a buffer layer, and an electron injection layer, wherein the electron transport region includes a compound represented by Formula 1:

Abstract: A compound is selected from the compound represented by Chemical Formula 1A, the compound represented by Chemical Formula 1B, and a mixture thereof.

Abstract: An organic light emitting display device is disclosed. The organic light emitting display device includes at least two light emitting parts each including a light emitting layer and an electron transport layers, and at least one charge generation layer between the light emitting parts, wherein at least one among the charge generation layer or the electron transport layer includes a compound having nitrogen atoms and a substituent for enhancing electron mobility.

Abstract: To provide a novel fluorescent organic compound (a fluorescent compound). The organic compound is a substance that emits fluorescence and an organic compound (a host material) in which TTA can occur efficiently. In the organic compound, triplet excitons, which do not contribute to light emission, can be efficiently converted into singlet excitons. The use of such an organic compound can increase emission efficiency of a light-emitting element.

Abstract: Disclosed are a compound for an organic optoelectric device represented by Chemical Formula 1, a composition for an organic optoelectric device, an organic optoelectric device including the same, and a display device. Details of Chemical Formula 1 are the same as those defined in the specification.

Abstract: Tetracenothiophene derivatives are disclosed, which comprise alkoxy-C-alkyne solubilizing groups at transversal positions of the tetracenothiophene unit. These compounds enable preferential molecular stacking and a high field effect mobility and at the same time show improved solubility as compared to known benzothiophene- and pentacene-based materials. In addition, organic thin films comprising these derivatives, their use in electronic devices and components, such as organic thin film transistors, and methods of manufacturing the same are disclosed.

Abstract: To provide an organometallic complex with high emission efficiency and high heat resistance, which emits yellow green light. The organometallic complex includes a metal and a ligand which is a benzo[h]quinazoline skeleton including a condensed ring bonded to benzo[h]quinazoline through a carbon-carbon bond between the 5-position and the 6-position. The organometallic complex has a structure represented by General Formula (G1). In General Formula (G1), M represents a metal belonging to Group 9 or 10; each of R1 to R4 independently represents hydrogen, a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, or a substituted or unsubstituted aryl group having 6 to 10 carbon atoms; and R5 represents hydrogen, a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, or a substituted or unsubstituted phenyl group. A ring X represents a substituted or unsubstituted six-membered aromatic ring formed with carbon or both carbon and nitrogen.

Abstract: A bio-solar cell including: one or more photosynthetic complexes, each photosynthetic complex including one or more chlorophyll compounds and one or more components of Photosystem II; one or more carbon nanotubes upon which the one or more photosynthetic complexes are bound at a first region of the one or more carbon nanotubes; and a conductive substrate attached to a second region of the one or more carbon nanotubes.

Abstract: A transistor device comprising: source and drain conductors connected by a semiconductor channel; and a gate conductor capacitively coupled to the semiconductor channel via a gate dielectric; wherein the gate conductor comprises at least one portion overlapping at least part of at least one of said source and drain conductors; and further comprising a patterned insulator interposed between at least part of said at least one of the source and drain conductors and said at least one overlapping portion of said gate conductor so as to reduce capacitive coupling between the said at least one of the source and drain conductors and the gate conductor by more than any reduction in capacitive coupling between the semiconductor channel and the gate conductor.

Abstract: Embodiments of the invention pertain to the use of alloyed semiconductor nanocrystals for use in solar cells. The use of alloyed semiconductor nanocrystals offers materials that have a flexible stoichiometry. The alloyed semiconductor may be a ternary semiconductor alloy, such as AxB1-xC or AB1-yCy, or a quaternary semiconductor alloy, such as AxByC1-x-yD, AxB1-xCyD1-y or ABxCyD1-x-y (where A, B, C, and D are different elements). In general, alloys with more than four elements can be used as well, although it can be much harder to control the synthesis and quality of such materials. Embodiments of the invention pertain to solar cells having a layer incorporating two or more organic materials such that percolated paths for one or both molecular species are created. Specific embodiments of the invention pertain to a method for fabricating nanostructured bulk heterojunction that facilitates both efficient exciton diffusion and charge transport.

Abstract: A display device includes a display, a plurality of first reflectors, a light processing member, and a plurality of light sources. The first reflectors each have a first bottom part that is disposed on a rear face side of the display and a first peripheral part that extends from an outer edge of the first bottom part toward a rear face of the display, with a surface of the first bottom part and a surface of the first peripheral part forming an obtuse angle. The light processing member is disposed between the display and the first reflectors, the light processing member being spaced apart from the first reflectors by a specific distance. The light sources are disposed relative to the surfaces of the first bottom parts, respectively.

Abstract: An organic light emitting diode and an organic light emitting display apparatus using the organic light emitting diode are provided. The organic light emitting diode includes a first electrode; a second electrode; and an organic layer between the first electrode and the second electrode to emit white light, and the organic layer is configured to emit white light in which an X-axis coordinate value in a color coordinate system is equal to or greater than 0.29, a Y-axis coordinate value in the color coordinate system is in a range of 0.32 to 0.45, and the Y-axis coordinate value in the color coordinate system is equal to or greater than the X-axis coordinate value in the color coordinate system.

Abstract: A display device includes a window member and a display module coupled to the window member. The window member includes a first resin layer and a second resin layer. The first resin layer is on the display module and has a first elongation, a first thickness, and a first hardness. The second resin layer is on the display module and the first resin layer and has a second elongation smaller than the first elongation, a second thickness greater than the first thickness, and a second hardness greater than the first hardness.

Abstract: A package is provided. The package includes a base substrate includes a first surface, a second surface opposite the first surface, and a side face, wherein a device to be packaged is formed on the first surface, and a packaging cover-plate surrounding the first surface of the base substrate and directly coupled to at least one of the side face and the second surface of the base substrate, wherein the device to be packaged is formed in an enclosure space defined by the packaging cover-plate and the base substrate.

Abstract: An organic light-emitting diode (OLED) display and a method of manufacturing the same are disclosed. In one aspect, the display includes a lower substrate with a display area and a peripheral area surrounding the display area, an upper substrate facing the lower substrate and a display unit disposed on the display area. The display also includes a sealant disposed on the peripheral area and sealing the lower and upper substrates and a first metal layer interposed between the lower substrate and the sealant. The first metal layer includes a plurality of first through-portions extending in a first direction and arranged in a second direction crossing the first direction. The display also includes a second metal layer disposed on the first metal layer and comprising a plurality of second through-portions respectively corresponding to the first through-portions.

Abstract: It is an object of the present invention to provide a technology for manufacturing a highly reliable display device at a low cost with high yield. In the present invention, a spacer is formed over a pixel electrode, thereby protecting the pixel electrode layer from a mask in formation of an electroluminescent layer. In addition, since a layer that includes an organic material that has water permeability is sealed in a display device with a sealing material and the sealing material and the layer that includes the organic material are not in contact, deterioration of a light-emitting element due to a contaminant such as water can be prevented. The sealing material is formed in a portion of a driver circuit region in the display device, and thus, the narrower frame margin of the display device can also be accomplished.

Abstract: A transparent display device includes a display substrate having a display region and a sealing region surrounding the display region. The display region includes a plurality of pixel regions, each of which includes a light-emitting region and a transparent region. An opposite substrate faces the display substrate. A sealing member is interposed between the display substrate and the opposite substrate. The sealing member overlaps the sealing region. The sealing member bonds the display substrate to the opposite substrate and includes a plurality of first light openings defined therein.

Abstract: Provided are an encapsulation film, an organic electronic device comprising the same, and a method of manufacturing the organic electronic device. When the organic electronic device is encapsulated using the encapsulation film, an excellent moisture barrier property may be realized, and as reflection or scattering of light is prevented by absorbing and blocking internal or external light, external defects of the organic electronic device may be prevented.

Abstract: The present disclosure provides a flexible organic light emitting device and a method of manufacturing the same. The flexible organic light emitting device includes: a flexible array substrate; an organic light emitting device layer, formed on a side of the flexible array substrate; an aluminum oxide layer, formed on a side of the organic light emitting device layer away from the flexible array substrate; at least one composite water and oxygen barrier layer, formed on a side of the aluminum oxide layer away from the organic light emitting device layer and including a mica foil and a polymer layer, the mica foil being provided on a side of the polymer layer toward the aluminum oxide layer; and a polarizing layer with a touch electrode, formed on a side of the composite water and oxygen barrier layer away from the aluminum oxide layer.

Abstract: An organic light emitting diode includes a substrate having a surface modification layer. The surface modification layer includes a first film and a second film. The first film has a coefficient of expansion that is greater than the coefficient of expansion for the second film. The second film has ridges and troughs. A method of making a surface modification layer. A first film is formed over a substrate. The coated substrate is heated to expand the first film to a second surface area. A second film is formed over the expanded first film. The substrate coated with the first and second films is cooled to form ridges and troughs in the second film.