Abstract: Provided is a light emitting device with improved light extracting efficiency and further higher heat releasing performance. A light emitting device includes a planar lead frame having a first lead and a second lead, and includes a light emitting element mounted on the first lead, a resin frame surrounding a periphery of the light emitting element, a first sealing resin filled in the inner side of the resin frame and sealing the light emitting element, and a second sealing resin covering the resin frame and the first sealing resin. Lower end of inner surface of the resin frame is arranged only on the first lead, and at an outside of the resin frame, and the second resin member covers at least a part of the first lead and the second lead. Of the back-surface of the first lead, a region directly under the blight emitting element is exposed.

Abstract: A package body for a semiconductor device includes a lead frame, an insulating package, and a reflective coating layer. The lead frame has a first electrode and a second electrode separated from each other. The insulating package provides a housing structure and forming a package cavity therein. The package cavity has a reflective side surface formed by the insulating package. The reflective coating layer partially covers the first electrode and the second electrode and forms a reflective bottom surface of the package cavity. Each of the first electrode and the second electrode may have an angled cut. The insulating package may be made of a binder-filler composite containing white pigments. The package body may be an all diffusive integrated reflecting surfaces (AR-IRS) package body, and may be used in an encapsulant-free semiconductor package.

Abstract: Provided is a heat conversion device, including: a housing; a thermoelectric module received in the housing and including a thermoelectric semiconductor between substrates disposed to face each other; a first temperature conversion portion and a second temperature conversion portion disposed between the substrates, respectively; and a heat reduction portion adopted to guide a part of a fluid flowing in the housing and passing through the first temperature conversion portion to the second temperature conversion portion.

Abstract: A control circuit of a piezoelectric driving device includes: a signal generation unit that inputs a state inspection signal to a plurality of piezoelectric elements connected to each other in parallel; and a state detection unit that detects a state of the plurality of piezoelectric elements based on a state detection signal generated from the plurality of piezoelectric elements in accordance with the state inspection signal.

Abstract: A piezo component with a contacting component for electrically contacting a piezo stack. The contacting component has an electrically conductive meandering structure for bringing the contacting component into electric contact with inner electrodes of the piezo stack and an electrically conductive contacting device for electrically contacting the contacting component from outside the piezo stack. The meandering structure and the contacting device are arranged at a distance from each other, and a connection element is provided in order to connect the contacting device and the meandering structure in an electrically conductive manner and simultaneously decouple forces between the contacting device and the meandering structure.

Abstract: A strain amplification structure has a frame with a hexagonal structure incorporating a plurality of rigid beams that are connected to opposing end beams by a plurality of flexible joints. A piezoceramic actuator assembly is connected to the opposing end beams having a collar including an opening. A shaft providing an output is connected to the plurality of rigid beams with flexible joints and passes through the opening in the collar for non-interfering motion orthogonal to the actuator assembly.

Abstract: Piezoelectric transistors with Schottky contacts and power conversion applications utilizing such piezoelectric transistors are disclosed. A piezoelectric transistor configured in accordance with the inventive concepts disclosed herein may be fabricated to behave as a controllable/switchable active device with an intrinsic anti-parallel diode. Piezoelectric transistors configured in this manner may be utilized in power amplifiers, power converters, as well as in a variety of electronic systems/applications.

Abstract: A semiconductor memory device includes free magnetic pattern on a substrate, a reference magnetic pattern on the free magnetic pattern, the reference magnetic pattern including a first pinned pattern, a second pinned pattern, and an exchange coupling pattern between the first and second pinned patterns, a tunnel barrier pattern between the reference magnetic pattern and the free magnetic pattern, a polarization enhancement magnetic pattern between the tunnel barrier pattern and the first pinned pattern, and an intervening pattern between the polarization enhancement magnetic pattern and the first pinned pattern, wherein the first pinned pattern includes first ferromagnetic patterns and anti-ferromagnetic exchange coupling patterns which are alternately stacked.

Abstract: An electronic device may include a semiconductor memory, and the semiconductor memory may include a free layer having a variable magnetization direction; a pinned layer having a pinned magnetization direction; a tunnel barrier layer interposed between the free layer and the pinned layer; and an under layer which is in contact with the free layer and includes a rare earth metal nitride.

Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes a semiconductor element, a plurality of terminals, and a sealing resin. The semiconductor element has a front surface and a back surface. The front surface and the back surface face in opposite directions to each other in a thickness direction of the semiconductor element. The plurality of terminals are disposed at a distance from the semiconductor element and are electrically connected to the front surface. The sealing resin has a first surface facing in a same direction as the direction in which the front surface faces. Each of the plurality of terminals has a main surface exposed from the first surface.

Abstract: The present invention relates to a spin logic device and an electronic equipment comprising the same. A spin logic device may include a Spin Hall effect (SHE) layer formed of a conductive material having Spin Hall effect and configured to receive a first logic input current and a second logic input current, the first logic input current and the second logic input current both being an in-plane current, a magnetic tunnel junction provided on the SHE layer comprising a free magnetic layer in contact with the SHE layer, a barrier layer disposed on the free magnetic layer, and a reference magnetic layer disposed on the barrier layer, and a current wiring in connection to the reference magnetic layer side of the magnetic tunnel junction, the current wiring being in cooperation with the SHE layer to apply a read current passing through the magnetic tunnel junction therebetween.

Abstract: This invention provides a manufacturing method of a magnetoresistive effect element having a higher MR ratio than a conventional element. A manufacturing method of a magnetoresistive effect element of an embodiment of the invention includes: a step of forming a tunnel barrier layer on a substrate, on a surface of which one of a magnetization free layer and a magnetization fixed layer is formed; a step of cooling the substrate after the step of forming a tunnel barrier layer; a step of forming an other one of the magnetization free layer and the magnetization fixed layer on the tunnel barrier layer after the step of cooling; and a step of raising a temperature of the substrate after the step of forming the other one of the magnetization free layer and the magnetization fixed layer.

Abstract: A process flow for forming magnetic tunnel junctions (MTJs) with minimal sidewall residue and reduced low tail population is disclosed wherein a pattern is first formed in a hard mask that is an uppermost MTJ layer. Thereafter, the hard mask pattern is etch transferred through the underlying MTJ layers including a reference layer/tunnel barrier/free layer stack. The etch transfer may be completed in a single RIE step based on a first flow rate of O2 and a second flow rate of an oxidant such as CH3OH where the CH3OH/O2 ratio is at least 7.5:1. The RIE may also include a flow rate of a noble gas. In other embodiments, a chemical treatment with an oxidant such as CH3OH, and a volatilization at 50° C. to 450° C. may follow an etch transfer through the MTJ stack when the ion beam etch or plasma etch involves noble gas ions.

Abstract: Disclosed technology relates generally to integrated circuits, and more particularly, to structures incorporating and methods of forming metal lines including tungsten and carbon, such as conductive lines for memory arrays. In one aspect, a memory device comprises a lower conductive line extending in a first direction and an upper conductive line extending in a second direction and crossing the lower conductive line, wherein at least one of the upper and lower conductive lines comprises tungsten and carbon. The memory device additionally comprises a memory cell stack interposed at an intersection between the upper and lower conductive lines. The memory cell stack includes a first active element over the lower conductive line and a second active element over the first active element, wherein one of the first and second active elements comprises a storage element and the other of the first and second active elements comprises a selector element.

Abstract: A memory device according to an embodiment includes a first conductive layer, a second conductive layer, a third conductive layer intersecting the first conductive layer and the second conductive layer, and a resistance change layer including a first region which is provided between the first conductive layer and the third conductive layer and has a superlattice structure, a second region which is provided between the second conductive layer and the third conductive layer and has the superlattice structure, and a third region which is provided between the first region and the second region. The third region includes at least one element selected from the group consisting of O, F, C, P, B, N, H, Bi, Cd, Zn, Ga, Se, Al, S, Be, In, and Pb. Concentration of the at least one element in the third region is higher than that in the first region and the second region.

Abstract: Systems and methods for providing a Barrier Modulated Cell (BMC) structure with reduced shifting in stored memory cell resistance levels over time are described. The BMC structure may comprise a reversible resistance-switching memory element within a memory array comprising a first conductive metal oxide (e.g., titanium oxide) in series with an alternating stack of one or more layers of an amorphous low bandgap material (e.g., germanium) with one or more layers of a second conductive metal oxide (e.g., aluminum oxide). The BMC structure may include a barrier layer comprising a first conductive metal oxide, such as titanium oxide or strontium titanate, in series with a germanium stack that includes a layer of amorphous germanium or amorphous silicon germanium paired with a second conductive metal oxide. The second conductive metal oxide (e.g., aluminum oxide) may be different from the first conductive metal oxide (e.g., titanium oxide).

Abstract: Resistive memory having confined filament formation is described herein. One or more method embodiments include forming an opening in a stack having a silicon material and an oxide material on the silicon material, and forming an oxide material in the opening adjacent the silicon material, wherein the oxide material formed in the opening confines filament formation in the resistive memory cell to an area enclosed by the oxide material formed in the opening.

Abstract: A resistive random access memory (RRAM) structure including a substrate, RRAM cells and protection layers is provided. The RRAM cells are adjacent to each other and disposed on the substrate. The protection layers are disposed respectively on sidewalls of the RRAM cells without covering top surfaces of the RRAM cells. Each of the protection layers includes a sidewall portion and an extension portion. The sidewall portion is disposed on each of the sidewalls of each of the RRAM cells. The extension portion is connected to a lower portion of the sidewall portion. An upper portion of the extension portion is lower than an upper portion of the sidewall portion. The extension portion is connected between the sidewall portions in a region between the RRAM cells.

Abstract: Some embodiments include methods of forming memory cells. Heater structures are formed over an array of electrical nodes, and phase change material is formed across the heater structures. The phase change material is patterned into a plurality of confined structures, with the confined structures being in one-to-one correspondence with the heater structures and being spaced from one another by one or more insulative materials that entirely laterally surround each of the confined structures. Some embodiments include memory arrays having heater structures over an array of electrical nodes. Confined phase change material structures are over the heater structures and in one-to-one correspondence with the heater structures. The confined phase change material structures are spaced from one another by one or more insulative materials that entirely laterally surround each of the confined phase change material structures.

Abstract: The present invention provides a display device and a manufacturing method thereof that can simplify manufacturing steps and enhance efficiency in the use of materials, and further, a manufacturing method that can enhance adhesiveness of a pattern. One feature of the invention is that at least one or more patterns needed for manufacturing a display panel, such as a conductive layer forming a wiring or an electrode or a mask for forming a desired pattern is/are formed by a method capable of selectively forming a pattern, thereby manufacturing a display panel.

Abstract: Provided are a novel aromatic amine derivative having a specific structure and an organic electroluminescence device in which an organic thin layer comprising a single layer or plural layers including a light emitting layer is interposed between a cathode and an anode, wherein at leas one layer of the above organic thin layer contains the aromatic amine derivative described above in the form of a single component or a mixed component. Thus, the organic electroluminescence device is less liable to be crystallized in molecules, improved in a yield in producing the organic electroluminescence device and extended in a lifetime.

Abstract: Disclosed are a compound for an organic optoelectronic device, an organic light emitting diode including the same, and a display device including the organic light emitting diode. The compound for an organic optoelectronic device represented by a combination of the following Chemical Formula 1; and Chemical Formula 2 or 3 provides an organic light emitting diode having life-span characteristics due to excellent electrochemical and thermal stability, and high luminous efficiency at a low driving voltage.

Abstract: Provided is a novel substance that can be used in an element capable of emitting phosphorescence, a novel substance that contributes to high emission efficiency, or a novel substance that contributes to light emission with high color purity. A light-emitting element includes a pair of electrodes and an EL layer between the pair of electrodes. The EL layer includes a substance including a carbazole skeleton. The substance is bonded to a substituted or unsubstituted first arylene group through a nitrogen atom included in the carbazole skeleton. The first arylene group is bonded to a substituted or unsubstituted benzofuropyridyl group or a substituted or unsubstituted benzothienopyridyl group. The first arylene group includes 1 to 5 substituted or unsubstituted second arylene groups which are bonded to one another. The EL layer may further include a layer including an emission center substance, specifically an iridium compound.

Abstract: An organic light-emitting device containing a compound having a lone electron pair and a ? electron orbital, the compound emitting fluorescent light by such a mechanism that when at least a part of electrons constituting the lone electron pair is excited to an excited triplet state 3n?* through n?* transition, the part of electrons undergoes inverse intersystem crossing from the excited triplet state 3n?* to an excited singlet state 1n?*, and returns from the excited singlet state 1n?* to the ground state, at which the fluorescent light is emitted. The organic light-emitting device has a high light emission efficiency.

Abstract: A charge transport material containing a charge transport substance that is composed of a compound represented by formula (1) and another charge transport substance that is composed of a charge transport compound having a molecular weight of 200-9,000 exhibits good solubility in an organic solvent. A charge transport varnish, from which a charge transport thin film having excellent charge transport properties, flatness and uniformity is formed with good reproducibility, is able to be prepared by dissolving the above-described charge transport material in an organic solvent.

Abstract: A blue phosphorescence compound is disclosed. The blue phosphorescence compound represented by Chemical Formula 1 below.

Abstract: Organic metal compounds, organic light-emitting devices, and lighting devices employing the same are provided. The organic metal compound has a chemical structure represented by formula (I): wherein each R1 is independent and can be hydrogen, halogen, C1-10 alkyl group, C5-10 cycloalkyl group, or C5-12 aryl group; R2 is trialkyl silyl group; and L is a picolinic acid ligand, a 2-(imidazol-2-yl) pyridine ligand, a 2-(4,5-dimethyl-imidazol-2-yl) pyridine ligand, a 3-(trifluoromethyl)-5-(pyridine-2-yl)-1,2,4-triazolate ligand, or a 3-(isobutyl)-5-(pyridine-2-yl)-1,2,4-triazolate ligand.

Abstract: An iridium complex and an OLED using the same are shown. The iridium complex is represented by formula (I), wherein R1 is substituted or unsubstituted C1-12 alkyl, or substituted or unsubstituted C6-12 aryl; R2 is hydrogen, fluorine or —CmF2m+1 (m=1, 2 or 3), substituted or unsubstituted C1-12 alkyl, or substituted or unsubstituted C6-12 aryl; R3 is hydrogen, fluorine or —CmF2m+1 (m=1, 2 or 3), substituted or unsubstituted C1-6 alkyl or alkoxy, and n is 1, 2, 3 or 4; each of R4 is hydrogen or substituted or unsubstituted C1-12 alkyl, or R4's may join to form a C3-8 aromatic ring, and R4's may be the same or different; X1, X2, X3 and X4 are each independently CH or nitrogen; Y1, Y2 and Y3 are each independently carbon or nitrogen, with a proviso that at least one of Y1, Y2 and Y3 is nitrogen, and the tridentate chelate Y1^Y2^Y3 is dianionic.

Abstract: The present invention includes novel metal complexes derived from pyridyl substituted aromatic compound core structures. These compounds can be used as emitters for PHOLEDs.

Abstract: An organic electroluminescent device, which has a pair of electrodes and at least one organic layer including a luminescent layer between the pair of electrodes, wherein at least one layer between the pair of electrodes comprises at least one metal complex having a tridentate- or higher polydentate-chain structure ligand.

Abstract: This invention discloses novel compounds containing indolocarbazole and silicon core structures. These compounds can be used as hosts for OLEDs.

Abstract: A display device having an improved display characteristics and reduced manufacturing cost is provided. The display device includes a plurality of pixels arranged on a surface of a substrate. The plurality of pixels each include: a light-emitting element; a driving transistor; a selecting transistor; and a retention capacitor. The driving transistor has a bottom-gate structure. The driving transistor has a semiconductor layer containing a first semiconductor. The retention capacitor has a first electrode and a second electrode. The first electrode doubles as a gate of the driving transistor. The second electrode is disposed at a lower layer than the first electrode and contains a second semiconductor.

Abstract: An organic solar cell device is provided, including a first electrode, a photoactive layer, a hole transport layer, and a second electrode that are stacked successively. The photoactive layer includes an electron receptor material and an electron donor material. The electron receptor material is graphene nitride that forms a foamy film on the first electrode and has a three-dimensional network structure. A part of the electron donor material permeates into the graphene nitride, and a part of the electron donor material is enriched on a side of the hole transport layer to form an electron donor enriched layer.

Abstract: A display device is provided including a first electrodes arranged in a matrix shape above an insulation surface, a bank covering an end part of the first electrode and having an opening part exposing an upper surface of the first electrode, an organic layer covering the opening part and including a light emitting layer, and a second electrode covering the bank and the organic layer, wherein the bank has an upper surface part and an inclined part between the upper surface part and an opening in the bank, and a surface of the inclined part has a plurality of concave and convex parts.

Abstract: A novel light-emitting element or a highly reliable light-emitting element is provided. The light-emitting element includes an anode, a cathode, and an EL layer between the anode and the cathode. The EL layer includes at least a light-emitting layer. The light-emitting layer includes at least a first organic compound and a second organic compound. The energy for liberating halogen from a halogen-substituted product of the first organic compound in a radical anion state and in a triplet excited state is less than or equal to 1.00 eV. The amount of halogen-substituted product in the second organic compound is not increased with an increase in driving time of the light-emitting element.

Abstract: A fused aromatic derivative shown by the following formula (1): wherein Ra and Rb are independently a hydrogen atom or a substituent, p is an integer of 1 to 8 and q is an integer of 1 to 11, and when p and q are two or more, Ras and Rbs may be independently the same or different, and adjacent substituents Ras may form a ring, L1 is a single bond or a substituted or unsubstituted divalent linking group, and Ar1 is a substituted or unsubstituted aryl group having 6 to 50 ring carbon atoms or a substituted or unsubstituted heteroaryl group having 5 to 50 ring atoms, provided that when L1 is a single bond and at least one of Ras is not a hydrogen atom, Ar1 is not a triphenylenyl group, and provided that substituents of L1 and Ar1, and Ra and Rb contain no amino group.

Abstract: An organic light emitting device includes a first emitting part on an anode, the first emitting part including a first emission layer and a first hole transport layer a second emitting part on the first emitting part, the second emitting part including a second emission layer and a second hole transport layer; a third emitting part on the second emitting part including a third emission layer and a third hole transport layer; and a cathode on the third emitting part. The third emitting part further includes a fourth emission layer to emit light having a same color as the third emission layer and includes a dopant and a mixed host of at least two hosts, and a fourth hole transport layer provided on the third hole transport layer while in contact with the third emission layer, and has a hole mobility lower than that of the third hole transport layer.

Abstract: A light emitting device including a first electrode, a light emitting portion on the first electrode, the light emitting portion including a plurality of light emitting units and at least one interconnecting layer between ones of the light emitting units that are adjacent to each other, and a second electrode on the light emitting portion. The at least one interconnecting layer includes a p-type charge generation layer doped with a p-type dopant and an n-type charge generation layer doped with an n-type dopant. At least one of the p-type charge generation layer and the n-type charge generation layer has a concentration gradient of the p-type dopant or the n-type dopant.

Abstract: An electronic component includes a connection carrier having a cover surface, a first electric connection point and a second electric connection point, and an organic active area. A first electrode interconnects in an electrically conductive manner the active area and the first electric connection point. An encapsulation layer protects the active area against humidity and atmospheric gases. The electronic component can be contacted from the outside by the electric connection points and the encapsulation layer is in direct contact, in places, with the connection carrier.

Abstract: The present invention relates to an organic light-emitting element and a production method thereof. Specifically, the present invention relates to an organic light-emitting element, which has excellent productivity during mass production thereof and may allow simplification of vapor deposition equipment, and the like, and a production method thereof.

Abstract: A manufacturing method of a display device in an embodiment according to the present invention, the method includes forming a terminal electrode in a terminal part of a first substrate, forming a pixel electrode corresponding to each pixel in a pixel part of the first substrate, forming a first intermediate layer in a region including the terminal electrode of the terminal part, forming an organic layer above the pixel electrode in the pixel part, forming a counter electrode layer above the first substrate including the pixel part and the terminal part, forming a passivation layer above the counter electrode layer, arranging a second substrate opposing the pixel part and bonding the first substrate and the second substrate using a sealing member enclosing the pixel part, and removing the first intermediate layer, the counter electrode layer and the passivation layer in the terminal part.

Abstract: A flexible display device comprises a flexible substrate including a display area and a non-display area; a display layer in the display area on a first surface of the flexible substrate; a polarizing plate on the display layer; and a cover coat in the non-display area on the first surface of the flexible substrate, the cover coat including a first end portion overlapping with the polarizing plate. At least a portion of the non-display area of the flexible substrate and the cover coat are bendable in a bending direction.

Abstract: The present invention relates to an organic light emitting diode, and more specifically, to an organic light emitting diode capable of significantly increasing light extraction efficiency through optimization of a corrugated structure, which is formed by being transferred from an inner light extraction layer, thereby enabling excellent light-emitting efficiency.

Abstract: An optoelectronic package includes a substrate, a light emitting chip, an optical sealant, and an optical scattering layer. The substrate has a carrying plane and a wiring layer formed on the carrying plane. The light emitting chip used for emitting a light ray is mounted on the carrying plane and electrically connected to the wiring layer. The optical sealant covers the carrying plane and wraps the light emitting chip. The optical sealant is located in the path of the light ray. The optical scattering layer covers the optical sealant. The optical sealant located in the path of the light ray is formed between the substrate and the optical scattering layer. Preferably, the refractive index of the optical sealant is larger than or equal to the refractive index of the optical scattering layer.

Abstract: A light extraction efficiency is increased in a display device having a plurality of display elements. The display device includes a first display element and a second display element over the first display element, and the first display element has a convex-concave shape. The convex-concave shape overlaps with a first opening provided in a reflective electrode of the second display element. A user can see an image that combines the display from the first display element and the display from the second display element. The convex-concave shape increases the light extraction efficiency of the first display element. The second display element is electrically connected to a transistor through a second opening provided in any layer of the first display element. The second display element can be provided close to the first display element.

Abstract: A display panel includes a display device, a first anti-reflection layer and a cover layer. The first anti-reflection layer is disposed over the display device, wherein the first anti-reflection layer comprises a first structural layer including a plurality of first protrusion structures opposite to the display device. The cover layer is disposed over the first anti-reflection layer.

Abstract: The present invention provides a manufacturing method of a flexible OLED display panel, in which multiple loops of inorganic barrier walls are first formed on a rigid base plate such that the multiple loops of inorganic barrier walls respectively and circumferentially encloses a plurality of panel areas on the rigid base plate so that when an organic material film is then coated on the rigid base plate and the multiple loops of inorganic barrier walls in a manner of covering the entirety of surface thereof, the multiple loops of inorganic barrier walls provide an effect of division to allow a plurality of flexible backings to be respectively formed on the plurality of panel areas of the rigid base plate. Afterwards, a laser lift off technique is applied to remove the plurality of flexible backings from the rigid base plate to thus obtain a plurality of flexible OLED display panels.

Abstract: A rechargeable battery is disclosed. In one aspect, the battery includes an electrode assembly including a first electrode and a second electrode wound with a separator interposed between the first and second electrodes and a case accommodating the electrode assembly. The battery also includes a cap assembly including a cap plate coupled to the case to close an opening formed on one side of the case, a first terminal placed at the cap plate and electrically connected to the first electrode, and a second terminal placed at the cap plate and electrically connected to the second electrode. The case includes a concave portion formed on one outer surface.

Abstract: A battery cover (1) covers an outer periphery of a fuse unit (13) connected to, through a battery terminal (11), a battery post (9) projecting in a recess (7) formed on an upper surface (5) of a battery (3). The battery cover (1) has a fuse cover part (15) covering the outer periphery of the fuse unit (13), and a terminal cover part (17). The terminal cover part (17) is connected to the fuse cover part (15) to be capable of being opened and closed, is arranged in the recess (7), and covers the battery post (9) and the battery terminal (11). The terminal cover part (17) is provided with a regulating portion (19) so as to regulate a movement of the terminal cover part (17) in a closing direction by coming in contact with the upper surface (5) of the battery (3).

Abstract: Provided is a top cap assembly for a cylindrical type secondary battery, including a CID short-circuiting member, which interrupts an electric current when a high voltage is generated in the cylindrical type secondary battery, a safety vent connected to an upper part of the CID short-circuiting member and including a plurality of notches, which are broken when a voltage equal to or greater than an allowable voltage of the CID short-circuiting member is generated, to discharge gas from the cylindrical type secondary battery, a top cap connected to the safety vent and disposed on the uppermost end of an upper opening part of the cylindrical type secondary battery, a gasket surrounding and sealing an outer circumferential surface of the CID short-circuiting member, and a heat resistant member preventing heat transfer between the gasket and the safety vent.