Abstract: A semi-finished product comprising at least one metal strip is provided. The metal strip consists essentially of 35 wt %?Co?55 wt %, 0 wt %?V?3 wt %, 0 wt %?Ni?2 wt %, 0 wt %?Nb?0.50 wt %, 0 wt %?Zr+Ta?1.5 wt %, 0 wt %?Cr?3 wt %, 0 wt %?Si?3 wt %, 0 wt %?Al?1 wt %, 0 wt %?Mn?1 wt %, 0 wt %?B?0.25 wt %, 0 wt %?C?0.1 wt %, remainder Fe and up to 1 wt % of impurities. The strip has a thickness d, where 0.05 mm?d?0.5 mm, a Vickers hardness greater than 300, an elongation at fracture of less than 5% and, after heat treatment of the strip at a temperature of between 700° C. and 900° C.

Abstract: A control method for a roller quenching process of a heavy-piece weight and large-section ultra-heavy plate has a specific heat model, heat transfer coefficient model, temperature field model and correction model. Plate parameters inputted include thickness, length and carbon content, technological procedure, roller speed and acceleration. Measured parameters include tapping temperature, temperature after air cooling and temperature after self-tempering. The temperature field model is used. Specific heat model and the heat transfer coefficient model are invoked for calculating an air cooling stage, water cooling stage and self-tempering stage in sequence. Temperature fields are corrected through the correction model. Simulated results include a group of cooling curves and cooling speed curves at different thicknesses. Practical temperature drop curves and cooling speed curves are obtained in combination with actual production and part of actual debugging process is replaced by model calculation.

Abstract: A system and method of controlling a metal melting process in a melting furnace, including determining at least one furnace parameter characterizing a melting furnace, adding a charge containing solid metal into the melting furnace, detecting at least one charge parameter characterizing the charge, firing a burner into the melting furnace to provide heat to melt the charge, and exhausting burner combustion products from the furnace, detecting at least one process parameter characterizing progress of melting the charge, calculating a furnace efficiency based on the at least one furnace parameter, calculating a predicted process pour readiness time based on the at least one charge parameter, the at least one process parameter, and the furnace efficiency, and controlling the metal melting process based on the predicted process pour readiness time.

Abstract: A screening apparatus comprises superposed screening decks with an upper one of the screening decks having a pellet input, and each screening deck ends with an oversize pellet output, the screening decks have screens to screen the green ore pellets from top to bottom, the oversize pellet outputs feeding the travelling grate through pellet chutes with the oversize green ore pellets of one of the upper and the lower one of the screening decks being superposed to oversize green ore pellets of the other one of the lower and the upper one of the screening decks, the pellet chutes defining a curved delivery path with an input slope at the chute pellet input greater than an output slope of the chute pellet output to reduce a delivery speed of the green ore pellets from the oversize pellet output to the travelling grate. There is also provided a method for screening and delivering green ore pellets onto a travelling grate of an induration furnace.

Abstract: The present invention relates to a process for dissolving metals in perhalide containing ionic liquids, and to the extraction of metals from mineral ores; the remediation of materials contaminated with heavy, toxic or radioactive metals; and to the removal of heavy and toxic metals from hydrocarbon streams.

Abstract: The presently disclosed subject matter is directed to a method of hydrothermally treating metallic packaging, metallic labeling material, and scrap metal items. Particularly, the disclosed method initially comprises providing a metallic starting material. The metallic starting material is introduced to a reactor and processed at elevated temperature and/or pressure for a desired amount of time. As a result, the metallic portion of the starting material separates into a distinct layer that can be removed from the remainder of the starting material.

Abstract: Disclosed is a process for extracting or separating metal ions using a composition including: an ionic liquid of formula C+,-X, in which: C+ is an onium cation including at least one hydrocarbon chain R1 including from 6 to 20 carbon atoms; XP? is an anion of charge p, the ionic liquid having a solubility in water at 20° C. of at least 10 g/l; an acid; and water. The composition includes two liquid phases: a phase enriched in ionic liquid ?IL; and a phase enriched in water ?w, the pH of which is less than or equal to 4.7. The composition is useful for extracting a metal ion from an acidic aqueous medium including a metal ion, for separating metal ions from an aqueous medium including at least two metal ions or for purifying an acidic aqueous solution including a metal ion.

Abstract: A mineral processing method capable of efficiently separating a copper mineral from a molybdenum mineral is provided. The mineral processing method includes: a conditioning step of adding sulfite as a surface treatment agent to a mineral slurry containing a copper mineral and a molybdenum mineral; and a flotation step of performing flotation using the mineral slurry after the conditioning step. The hydrophilicity of the copper mineral can be selectively enhanced by sulfite, so as to be able to produce a difference in hydrophilicity between the copper mineral and the molybdenum mineral. Therefore, the molybdenum mineral can be selectively caused to float, and the copper mineral and the molybdenum mineral can be efficiently separated from each other.

Abstract: The present invention relates to rare earth metallurgy, in particular a method for recovering scandium from the red mud byproduct of alumina production. The method includes repulping red mud, sorption leaching scandium therefrom with the use of an ion-exchange sorbing agent to obtain a rich-in-scandium ion exchanger and depleted-in-scandium pulp, desorbing scandium with a solution of sodium hydrocarbonate to obtain a desorbed ion exchanger which is returned to the sorption leaching stage and a solution of industrial reclaim scandium which is transferred to obtain a deposited concentrated scandium, wherein scandium is continuously sorption-leached from red mud pulp in the phosphorous-containing ion exchanger in a countercurrent mode upon direct contact of the pulp with the ion exchanger, scandium is desorbed from the organic phase of the ion exchanger by a solution with a concentration of Na2CO3 of 200-450 g/dm3 to obtain industrial reclaim scandium, from which a scandium concentrate is recovered.

Abstract: A covered electrical wire comprising a conductor and an insulating covering layer provided outside the conductor, the conductor being a stranded wire composed of a strand of a plurality of copper alloy wires: composed of a copper alloy containing Fe in an amount of 0.2% by mass or more and 1.5% by mass or less, P in an amount of 0.05% by mass or more and 0.7% by mass or less, Mg in an amount of 0.01% by mass or more and 0.5% by mass or less, and one or more elements selected from C, Si and Mn in an amount of 10 ppm by mass or more and 500 ppm by mass or less in total, with the balance being Cu and impurities; and having a wire diameter of 0.5 mm or less.

Abstract: A solder alloy comprises 38.0-42.0 wt % bismuth (Bi), 0.01-2 wt % of at least one further element chosen from the group of manganese (Mn), antimony (Sb) and copper (Cu), the balance being tin (Sn), and is at least substantially free of nickel (Ni), and further preferably substantially free of silver (Ag). The solder alloy may be combined with a halide-free solder flux to constitute a solder paste, solder bath or solder wire. The solder paste is for instance used for soldering electronic component packages such as quad flat non-leaded (QFN) packages or for soldering surface mount devices (SMD), resulting in low void formation. The solder alloy may also be applied by means of wave-soldering or selective soldering.

Abstract: Getter devices with improved sorption rate based on powders of ternary alloys particularly suitable for hydrogen and carbon monoxide sorption are described, said alloys having a composition comprising zirconium, vanadium and aluminum as main constituent elements.

Abstract: A polycrystalline nickel-base superalloy is disclosed. The alloy consists essentially of a gamma matrix phase including cobalt, and a gamma prime phase including aluminium, titanium, tantalum, and niobium. The overall concentration in the alloy of cobalt is from 15 to 26 atomic percent, and the overall concentration in the alloy of aluminium, titanium, tantalum, and niobium is from 13 to 14 atomic percent. Optionally, the alloy may include one or more constituents selected from the group consisting of: boron, carbon, chromium, iron, manganese, molybdenum, tungsten, silicon, zirconium. The balance is nickel and incidental impurities. The atomic ratio of aluminium to titanium is from 4.625:1 to 6.333:1.

Abstract: A nickel-base superalloy includes essentially, by weight: 14.75 to 26.5 percent cobalt, 4.1 to 4.65 percent aluminium, 1.1 to 1.9 percent titanium, 3.85 to 6.3 percent tantalum, 1.2 to 2.55 percent niobium, up to 0.07 percent boron, up to 0.06 percent carbon, up to 14.0 percent chromium, up to 1.0 percent iron, up to 1.0 percent manganese, up to 4.2 percent molybdenum, up to 0.5 percent silicon, up to 4.9 percent tungsten, and up to 0.1 percent zirconium, the balance being nickel and incidental impurities; wherein the overall concentration in the alloy of aluminium, titanium, tantalum, and niobium is from 13 to 14 atomic percent and the atomic ratio of aluminium to titanium is from 4.625:1 to 6.333:1.

Abstract: Provided is an Fe—Ni—Cr alloy that has excellent surface characteristics and enables formation of a blackened coating having excellent blackening characteristics and peeling resistance. The Fe—Ni—Cr alloy has a chemical composition containing, by mass %, C, Si, Mn, P, S, Cr, Ni, Mo, Co, Cu, N, Ti, Al, O, and H, the balance being Fe and inevitable impurities, and satisfying formulae (1) to (4): (1) T1=11×[% N]+0.1; (2) T2=?39×[% N]?1.0; (3) A1=7.5×[% N]+0.1; (4) A2=?42.5×[% N]+1.0, where [% M] represents content (mass %) of element M in the alloy, and T1, T2, A1, and A2 satisfy relationships T1<[% Ti]<T2 and A1<[% A1]<A2.

Abstract: Disclosed is an abrasive and corrosive wear-resistant high chromium cast iron containing: 1.0 to 3.0 wt % of carbon (C); 0.5 to 2.0 wt % of silicon (Si); 0.5 to 2.0 wt % of manganese (Mn); 25.0 to 36.0 wt % of chromium (Cr); 0.5 to 3.0 wt % of nickel (Ni); 0.3 to 2.0 wt % of molybdenum (Mo); 0.5 to 1.5 wt % of copper (Cu); 0.2 to 2.0 wt % of vanadium (V); 0.03 to 0.3 wt % of titanium (Ti); more than 0 wt % but not more than 0.03 wt % of niobium (Nb); more than 0 wt % but not more than 0.03 wt % of zirconium (Zr); more than 0 wt % but not more than 0.3 wt % of nitrogen (N); more than 0 wt % but not more than 0.03 wt % of cobalt (Co); and iron (Fe) balance and other unavoidable impurities. Further disclosed are a method of preparing the same cast iron and a part of a FGD apparatus of a thermoelectric power plant.

Abstract: There is provided a high-strength steel sheet and a method for producing the same. The steel sheet has a specified chemical composition and a microstructure including, in terms of area percentage, 20.0% or more and 60.0% or less ferrite, 40.0% or more and 80.0% or less of a hard phase composed of bainitic ferrite, tempered martensite, fresh martensite, and retained austenite, 35.0% or more and 55.0% or less bainitic ferrite with respect to the entire hard phase, 20.0% or more and 40.0% or less tempered martensite with respect to the entire hard phase, 3.0% or more and 15.0% or less fresh martensite with respect to the entire hard phase, and 5.0% or more and 20.0% or less retained austenite with respect to the entire hard phase.

Abstract: Provided are new high strength 6xxx aluminum alloys and methods of making aluminum sheets thereof. These aluminum sheets may be used to fabricate components which may replace steel in a variety of applications including the transportation industry. In some examples, the disclosed high strength 6xxx alloys can replace high strength steels with aluminum. In one example, steels having a yield strength below 340 MPa may be replaced with the disclosed 6xxx aluminum alloys without the need for major design modifications.

Abstract: A method for producing a high-strength aluminum alloy extruded product includes casting a billet using an aluminum alloy containing, by mass %, 6.0 to 8.0% of Zn, 1.0 to 3.5% of Mg, 0.2 to 1.5% of Cu, 0.10 to 0.25% of Zr, 0.005 to 0.05% of Ti, and 0.5% or less of Mn, [Mn+Zr] being 0.10 to 0.60%, with the balance being Al and unavoidable impurities, homogenizing the billet and then extruding the homogenized billet without being cooled, cooling an extruded product immediately after the extrusion at an average rate of 70 to 500° C./min, and then performing artificial aging.

Abstract: The in-bath roll used in a metal bath containing Al includes: an undercoat layer formed on a roll surface, the undercoat layer being formed by a cermet thermal spray coating film containing a first boride containing at least WB, WCoB, W2CoB2, a second boride composed of at least one kind of Cr, Zr, and Ti borides, and a balance composed of a cobalt-based alloy not containing nickel of 5% by mass or more; a topcoat layer formed on a surface of the undercoat layer, the topcoat layer being formed by a ceramic thermal spray coating film containing at least ZrO2 and Y2O3; and a friction reducing layer formed on a surface of the topcoat layer, the friction reducing layer being composed of BN and at least one kind of TiO2, ZrO2, SiO2, MgO, and CaO.

Abstract: A design method of tangential gradient thermal spraying coating for complex profile workpieces solves the erosion-resistant problem, and obtains a corresponding relation between the ductile-brittle ratio of the thermal sprayed coating and the impact angle change. The method includes: determining the complex profile part surface impact angle change rule according to the part operation environment conditions; selecting an erosion-resistant coating material according to the service condition requirement; obtaining the relation among the impact angle, ductile-brittle angle and erosion rate of the coating by an erosion test; determining the coating and the impact angle ductile-brittle corresponding relation curve; and performing spraying by using dual-channel powder feeding thermal spraying equipment the powder feeding quantity of which is adjustable in real time, based on a matching relation between the tangential gradient coating and the surface impact angle.

Abstract: A vapor deposition mask including a metallic substrate provided with a plurality of openings for passing vapor deposition particles, wherein at least a portion of the plurality of openings are structured by one or more opening groups in which the plurality of openings are repeatedly arranged in accordance with a constant rule, and a plurality of protrusions of identical height are arranged to support the entire substrate from one side, and are provided only outside the opening group formation region.

Abstract: Provided is a method for manufacturing a vapor deposition mask including a frame including a first side member and a second side member that extend in a first direction; and one or more mask sheets, the method including: stretching the one or more mask sheets on the first side member and the second side member in a state where an outside of the first side member is pressed in a direction from the first side member toward the second side member and where an outside of the second side member is pressed in a direction from the second side member toward the first side member.

Abstract: Coated articles include two or more functional infrared (IR) reflecting layers optionally sandwiched between at least dielectric layers. The dielectric layers may be of or including silicon nitride or the like. At least one of the IR reflecting layers is of or including zirconium nitride (e.g., ZrN) and at least another of the IR reflecting layers is of or including indium-tin-oxide (ITO).

Abstract: The invention provides a vapor deposition apparatus, comprising: a heating source, a crucible lid, a first crucible, a second crucible, a moving part, and a bracket. The first and second crucibles and moving part are disposed under the crucible lid; the first crucible is fixed on the bracket; and the first crucible and the second crucible each comprises an inner sidewall, an outer sidewall and a bottom. The crucible lid is mounted on the outer sidewall of the first crucible, the second crucible is fixed to top surface of the moving part; projection of the inner sidewall of the first crucible in vertical direction is located outside the outer sidewall of the second crucible. The density of the heating wire in the first region corresponding to the position of the crucible lid and the first crucible is greater than the density of the second region below the first region.

Abstract: A cylindrical sputtering target according to the present invention comprises: a metallic cylindrical substrate; and a ceramic cylindrical target material joined to an outer peripheral side of the cylindrical substrate and integrally formed so as to have a length of 750 mm or more in an axial direction, wherein a variation coefficient of a bulk resistivity in an axial direction is 0.05 or less on the outer peripheral surface of the cylindrical target material.

Abstract: A sheet portion and a first projection are included. The sheet portion has a sheet shape and includes one or more mask openings. The first projection is provided on a surface of the sheet portion the surface is configured to face a substrate, and the first projection has a frame shape and is formed along an edge of at least one of the one or more mask openings. With this configuration, thin films having dimensions conforming to the design dimensions and preventing blurring are formed over the substrate.

Abstract: A method for dry cleaning a susceptor is performed after a substrate is removed from a processing chamber of a substrate processing apparatus. In the method, a cleaning gas for dry cleaning is supplied to a first region including a substrate receiving region in the susceptor. The cleaning gas is regionally supplied to a second region where the cleaning gas is difficult to reach when the cleaning gas is supplied to the first region.

Abstract: A method of processing a substrate, includes: mounting at least one substrate on at least one substrate holder configured to rotate about an axis of the at least one substrate holder, the at least one substrate holder being provided along a circumferential direction of a rotary table installed inside a processing chamber; holding the at least one substrate by the at least one substrate holder in a contact manner by bringing a substrate contact portion into contact with at least three points on a lateral surface of the at least one substrate mounted on the at least one substrate holder; and performing a substrate process while rotating the rotary table and rotating the at least one substrate holder about the axis of the at least one substrate holder in a state where the at least one substrate is held by the at least one substrate holder in the contact manner.

Abstract: The present invention relates to a chemical vapor deposition apparatus for forming a film on a surface of a substrate(6) held in a reaction container, wherein the reaction container includes a first holding member(4) that is capable of holding the substrate(6) and a second holding member(5) that is capable of holding the substrate(6) independently from the first holding member(4), and at least one holding member among the first holding member(4) and the second holding member(5) is movable in a vertical direction.

Abstract: A process and apparatus is provided in which improved control of gas phase radicals is provided. In one embodiment, a system generating atomic oxygen is provided in which gases which generate the atomic oxygen are mixed prior to injection in a process space. The mixing may occur within a showerhead or prior to entrance into the showerhead. In another embodiment, a showerhead is provided which includes multiple zones. Some of the zones of the showerhead may inject the mixture of gases which generate the atomic oxygen into the process space, while other zones do not inject that mixture. In one embodiment, the mixture of gases which generates the atomic oxygen is injected into a main zone, while a subset of those gases is injected into inner and outer zones of the showerhead. The process and apparatus provides a uniform density of atomic oxygen across the substrate being processed.

Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. It relates to a process for preparing metal films comprising (a) depositing a metal-containing compound from the gaseous state onto a solid substrate and (b) bringing the solid substrate with the deposited metal-containing compound in contact with a compound of general formula (la), (lb), (lc), (Id), (lla), (lib), (lie), or (lid) wherein A is O or NRN, R and RN is hydrogen, an alkyl group, an alkenyl group, an aryl group, or a silyl group, R1, R2, R3, and R4 is hydrogen, an alkyl group, an alkenyl group, an aryl group, a silyl group, or an ester group, and E is nothing, oxygen, methylene, ethylene, or 1,3-propylene.

Abstract: An apparatus for coating specimens includes a reaction chamber and a plurality of reaction modules in the reaction chamber for containing specimens to be coated, where each reaction module includes a module inlet and a module outlet. A plurality of conduits are configured to be in fluid communication with at least one gas source external to the reaction chamber, and each of the conduits terminates in one of the reaction modules for delivery of gaseous reagents to the specimens to be coated. The module outlets are in fluid communication with the reaction chamber for expulsion of gaseous reaction products from the reaction modules.

Abstract: Described herein is a technique capable of suppressing a deviation in a thickness of a film formed on a substrate. According to one aspect of the technique of the present disclosure, a substrate processing apparatus includes a substrate retainer capable of supporting substrates; a cylindrical process chamber including a discharge part and supply holes; partition parts arranged in the circumferential direction to partition supply chambers communicating with the process chamber through the supply holes; nozzles provided with an ejection hole; and gas supply pipes. The supply chambers includes a first nozzle chamber and a second nozzle chamber, the process gas includes a source gas and an assist gas, the nozzles includes a first nozzle for the assist gas flows and a second nozzle disposed in the second nozzle chamber and through which the source gas flows, and the first nozzle is disposed adjacent to the second nozzle.

Abstract: A gas injector system is provided that allows for improved distribution and directional control of the vapor material in a CVD or CVI process. Gas injector systems may be used without experiencing significant clogging of gas injector tube apertures over multiple CVD procedures. Further, a gas injector system provided includes a dual aperture release system and/or allow vapor material to flow both substantially horizontally and substantially vertically.

Abstract: Embodiments described herein relate to ground path systems providing a shorter and symmetrical path for radio frequency (RF) energy to propagate to a ground to reduce generation of the parasitic plasma. The ground path system bifurcates the processing volume of the chamber to form an inner volume that isolates an outer volume of the processing volume.

Abstract: A controller for a substrate processing chamber includes a film thickness estimating module configured to while a first RF power is provided to generate plasma in the substrate processing chamber, receive a first measurement of a second RF power supplied to a probe, receive a second measurement of a DC self-bias voltage associated with the probe, wherein the second measurement is indicative of a thickness of a film deposited within the substrate processing chamber, and calculate a thickness of the film using the first measurement of the second RF power and the second measurement of the DC self-bias voltage. An operating parameter adjustment module is configured to adjust at least one operating parameter of the substrate processing chamber based on the thickness of the film as calculated by the film thickness estimating module.

Abstract: A processing kit for a plasma processing chamber. The processing kit includes a plurality of ceramic arc-shaped pieces. Each arc-shaped piece has a concave first end and a convex second end and the first end of each arc-shaped piece is configured to mate with an adjacent end of a neighboring arc-shaped piece to form a ring shaped inner isolator.

Abstract: The present disclosure relates to a chemical vapor deposition apparatus and associated methods. In some embodiments, the CVD apparatus has a vacuum chamber and a gas import having a gas import axis through which a process gas is imported into the vacuum chamber and being arranged near an upper region of the vacuum chamber. At least one exhaust port is arranged near a bottom region of the vacuum chamber. The CVD apparatus also has a shower head arranged under the gas import having a plurality of holes formed there through. The shower head redistributes the process gas to form a precursor material with an uneven thickness that matches a remove profile of a subsequent CMP process. As a result, planarity of the formed layer after the CMP process is improved.

Abstract: The present invention relates to a production of electro-conductive traces on the surface of polymeric articles using laser excitation for the areas to be metallised, followed by activation of the laser-treated areas with a metal salt solution, the article is later rinsed in distilled water, and the activated areas are metallised in the chemical plating bath. The aims of the invention are to produce cost-effective conductive traces of the circuits for the application in 3D moulded interconnect devices, to increase the quality of the circuit traces improving the selective metallization process. An irradiation dose and scanning parameters for the surface excitation are chosen experimentally, provided that a negative static charge appears on the surface of the laser-irradiated areas. The chosen parameters ensure that any surface degradation of the polymer is avoided.

Abstract: There is provided a technique capable of forming a plating film excellent in film thickness and quality uniformity on a to-be-plated surface of a semiconductor wafer while suppressing an increase in costs of facilities. An apparatus for manufacturing a semiconductor device includes: a reaction bath; a supply pipe provided inside the reaction bath and including a plurality of ejection holes for ejecting the reaction solution, the ejecting holes being arranged in a longitudinal direction of the supply pipe; and an outer bath serving as a reservoir bath provided adjacent to the reaction bath on a first end side of the supply pipe and storing therein the reaction solution overflowed the reaction bath. The aperture ratio of part of the ejection holes more distant from the outer bath is at least partially higher than that of part of the ejection holes closer to the outer bath.

Abstract: The invention relates to a method for providing a metallic surface with a coating by applying one or more layers of one or more metal-containing slips to the surface. At least one of the slips comprises a coloring and/or color-imparting substance which has no influence on the properties of the completed coating and/or can be decomposed by thermal treatment, and the local thickness of the applied slip layer is determined on the basis of the local color intensity of the layer.

Abstract: A method for coating a substrate having a cavity structure, in particular a cooling structure, inside the substrate, wherein the cavity structure includes openings in the surface of the substrate. At least one bonding layer, in particular a diffusion layer, or at least one metallic layer is applied onto the substrate, in particular onto the surface of the substrate, and subsequently at least one thermal protection layer is applied onto the at least one diffusion layer by using a plasma spray physical vapour deposition (PS-PVD) method, a hollow cathode sputtering method or a suspension plasma spray (SPS) method.

Abstract: A sacrificial anode with an anode body having at least one cavity within the anode body and a sensor arranged in the cavity.

Abstract: The present invention relates to an apparatus for manufacturing oxygen water or hydrogen water. The apparatus for manufacturing oxygen water or hydrogen water is configured such that oxygen or hydrogen generated from a device for generating oxygen and hydrogen by electrolyzing water is supplied to water using a fluid pump for manufacture of oxygen water or hydrogen water. The apparatus is configured to easily, quickly, and effectively manufacture oxygen water or hydrogen water in a plastic water bottle by dissolving high purity oxygen or hydrogen in source water in the bottle directly. Accordingly, by drinking oxygen water or hydrogen water manufactured thereby, fresh oxygen is supplied to the body, and hydrogen is also supplied to the body and removes harmful reactive oxygen species or reactive carbon species, thereby enabling a healthy life.

Abstract: A water electrolysis system includes a water electrolysis device; a water circulation circuit section including a water circulation pump; an antifreeze circulation circuit section including an antifreeze circulation pump; and a heat exchanger configured to perform heat exchange between the water circulation circuit section and the antifreeze circulation circuit section. Before water electrolysis is started by the water electrolysis device, a control device of the water electrolysis system circulates water by driving the water circulation pump and sets the antifreeze circulation pump to an operationally stopped state.

Abstract: Some examples of a method for manufacturing an electrode material for electrolytic hydrogen generation are described. Tungsten salt and nickel salt are mixed in a determined molar ratio on a carbon support by effectively controlling synthesis temperature and composition. Water and adsorbed oxygen, produced by mixing the tungsten salt and nickel salt are removed. Then, methane gas is flowed over the mixture resulting in the electrode material. The electrode material is suitable for use as a catalyst in electrolytic hydrogen generation processes, for example, at an industrial scale, to produce large quantities of hydrogen.

Abstract: An electrode for electrolysis including a conductive substrate formed of a porous metal plate, and at least one catalyst layer formed on a surface of the conductive substrate, wherein the electrode for electrolysis has a thickness of more than 0.5 mm and 1.2 mm or less; and value C, which is obtained by dividing sum B of perimeters of openings of the electrode for electrolysis by opening ratio A of the electrode for electrolysis, is more than 2 and 5 or less.

Abstract: Embodiments describe a photoelectrode including a first III-nitride nanowire layer, a transparent substrate in contact with the first nanowire layer at a first substrate surface and a second III-nitride nanowire layer in contact with the substrate at a second substrate surface, substantially opposite the first substrate surface.

Abstract: Systems and methods for controlling heat loss from an electrolytic cell in a smelting process using an adjustable fluid passage to control the heat loss from a preferred area of the electrolytic cell side walls based on operating conditions in the electrolytic cell, and to direct the waste heat from the electrolytic cell side walls back into the electrolytic cell.