Abstract: A manufacturing method of a high entropy alloy (HEA) coating is provided. The manufacturing method of the HEA coating includes: melting a HEA material, wherein the HEA material comprises at least four metal elements, and the at least four elements are contained in the HEA material with substantially the same content; performing a gas atomization process on the molten HEA material to form HEA powders; and performing a plasma spray process to heat the HEA powders, and spray the heated HEA powders onto a target substrate.

Abstract: A soft magnetic material comprises a plurality of iron-containing particles and an insulating layer on the iron-containing particles, the insulating layer comprising an oxide. The soft magnetic material is an aggregate of permeable micro-domains separated by insulation boundaries.

Abstract: Provided is a steel for nitrocarburizing that can ensure hardened case depth by suppressing precipitation of Cr, V, and Nb in a part of the surface layer very close to the surface. The provided steel comprises: a specific chemical composition satisfying 9.5?([Cr]/52+[V]/50.9+[Nb]/92.9+M)×103?18.5, with the balance being Fe and inevitable impurities; and a steel microstructure in which an area ratio of bainite phase with respect to the entire microstructure is more than 50%.

Abstract: The application relates to a mask and a vapor deposition device. The mask includes a first region provided with a first plurality of openings; and second regions located at both sides of the first region along a predetermined direction. At least one of the second regions is provided with a third plurality of openings disposed adjacent to the first plurality of openings and having a same structure as the first plurality of openings. At least a part of the first plurality of openings are used to form a first type of sub-pixels when the mask is in a first state. The first plurality of openings and at least a part of the third plurality of openings are used together to form a type of sub-pixels different from the first type of sub-pixels, when the mask moves a predetermined distance along the predetermined direction to be in a second state.

Abstract: Disclosed is a functional curtain fabric with an anhydrous coating layer. The functional curtain fabric is manufactured by method comprising step S1, preprocessing a fabric substrate; step S2, placing the preprocessed fabric substrate in step S1 into vacuum chamber of magnetron sputtering machine for coating: sputtering a metal onto the fabric substrate by using magnetron sputtering technology, so as to form a nano-metal film on the fabric substrate; and step S3, performing anti-oxidation treatment on the fabric substrate covered with the nano-metal film. The functional curtain fabric with an anhydrous coating layer can serve as an effective heat shield against exterior sunlight while having good light transmission. In addition, the functional curtain fabric with an anhydrous coating layer has good antimicrobial properties due to use of a metal coating of silver and titanium, and also has a degree of water resistance due to the nano-metal layer of silver and titanium.

Abstract: The present disclosure provides methods for forming diamond nanostructures and diamonds from amorphous carbon nanostructures in ambient temperature and pressure by irradiating carbon nanostructures to an undercooled state and quenching the melted carbon to convert a portion of the nanostructure into diamond.

Abstract: A method for synthesizing a graphene pattern is provided. According to the method, a catalyst block including a catalyst material is physically adhered to a portion of a growth substrate to form an interface between the catalyst block and the growth substrate. A graphene thin film is formed selectively at the interface between the catalyst block and the growth substrate in an atmosphere including a carbon source and a growth inhibitor.

Abstract: A method of forming a metallic material on a substrate includes coating a chuck of a metallic material deposition chamber with an elemental metal coating, loading a substrate onto the chuck of the metallic material deposition chamber, and depositing an elemental metal layer on the substrate by thermal decomposition of a metal precursor gas including metal compound molecules. Each of the metal compound molecules includes an atom of the elemental metal and a first number of atoms of a non-metallic element. The metal compound molecules react with atoms of the elemental metal in the metal coating to generate molecules of an intermediate reaction compound including an atom of the elemental metal and a second number of atoms of the non-metallic element, the second number of atoms being less than the first number of atoms. The metal layer on the substrate is formed by thermal decomposition of the intermediate reaction compound.

Abstract: A method of applying a protective coating to an article comprises the steps of a) depositing aluminum in a surface region of an article, and b) depositing chromium is the surface region of the article subsequent to step a), whereby at least a portion of the chromium replaces at least a portion of the aluminum. Another method and an article are also disclosed.

Abstract: Chemical vapor deposition (CVD) processes which use a ruthenium precursor of formula R1R2Ru(0), wherein R1 is an aryl group-containing ligand, and R2 is a diene group-containing ligand and a reducing gas a described. The CVD can include oxygen after an initial deposition period using the ruthenium precursor and reducing gas. The method can provide selective Ru deposition on conductive materials while minimizing deposition on non-conductive or less conductive materials. Further, the subsequent use of oxygen can significantly improve deposition rate while minimizing or eliminating oxidative damage of the substrate material. The method can be used to form Ru-containing layers on integrated circuits and other microelectronic devices.

Abstract: Lanthanide-containing film forming compositions comprising Lanthanide precursors having the general formulae: wherein Ln is a Lanthanide; A is independently N, Si, B, P or O; each E is independently C, Si, B or P; m and n are independently 0, 1 or 2; m+n>1; each R is independently an H or a C1-C4 hydrocarbyl group; L is a ?1 anionic ligand selected from the group consisting of NR?2, OR?, Cp, amidinate, ?-diketonate, or keto-iminate, wherein R? is an H or a C1-C4 hydrocarbon group; and L? is NR? or O, wherein R? is an H or a C1-C4 hydrocarbon group. Also disclosed are methods of synthesizing and using the disclosed precursors to deposit Lanthanide-containing films on one or more substrates via vapor deposition processes.

Abstract: The present invention relates to carbon material having, on the base material, a coating layer that includes TaC, and a method for producing the carbon material. For example, the carbon material may include a base material and a coating layer on the surface of the base material. The coating layer may include TaC, which may have a maximum diffraction peak value on the (111) surface, where diffraction peak values may be generated by diffractions of X-rays in XRD analysis.

Abstract: Methods for depositing metal oxide layers on metal surfaces are described. The methods include exposing a substrate to separate doses of a metal precursor, which does not contain metal-oxygen bonds, and a modified alcohol with an electron withdrawing group positioned relative to a beta carbon so as to increase the acidity of a beta hydrogen attached to the beta carbon. These methods do not oxidize the underlying metal layer and are able to be performed at lower temperatures than processes performed with water or without modified alcohols.

Abstract: According to one aspect thereof, there is provided a substrate processing apparatus including: a reaction tube including an outer tube and an inner tube; a manifold connected to an open end of the reaction tube; a lid configured to close one end of the manifold; a first gas supply pipe configured to supply a cleaning gas; and a second gas supply pipe configured to supply a purge gas of purging a space inside the manifold. The reaction tube includes: an exhaust space; an exhaust outlet communicating with the exhaust space; a first exhaust port provided in the inner tube so as to face a substrate accommodated in the inner tube; and second exhaust ports through which the exhaust space communicates with the space inside the manifold. At least one of the second exhaust ports promotes gas exhaust in the exhaust space distanced away from the first exhaust port.

Abstract: The present disclosure provides a method for manufacturing a fuel cell separator that ensures easy manufacture of the fuel cell separator having sufficiently excellent conductive property. The method for manufacturing the fuel cell separator according to the present disclosure is a method for manufacturing a fuel cell separator where a conductive oxide film is formed on a surface of a metal substrate using a mist CVD method, and the method includes: preparing a raw material solution containing a precursor of the conductive oxide film and hydrochloric acid; atomizing the raw material solution to generate a mist; and supplying the mist to the surface of the metal substrate to form the conductive oxide film on the surface of the metal substrate through a reaction by heat.

Abstract: Apparatus and methods for spatial atomic layer deposition including at least one first exhaust system and at least one second exhaust system. Each exhaust system including a throttle valve and a pressure gauge to control the pressure in the processing region associated with the individual exhaust system.

Abstract: In order to optimally supply a raw material by using a heater, the fluid control device (100) includes a fluid heating section (1) provided with a flow path or a fluid accommodation portion inside, and a heater (10) for heating the fluid heating section, the heater having a heating element (10a) and a metallic heat transfer member (10b) thermally connected to the heating element and arranged so as to surround the fluid heating section, and the surface of the heat transfer member facing the fluid heating section includes a surface (S1) subjected to surface treatment for improving heat dissipation.

Abstract: A susceptor for a CVD reactor includes a flat circular disc-shaped body with channels that are arranged on a broad side of the disc-shaped body within one or more circular surface sections extending on a plane in order to transfer heat to a substrate holder. The channels run about respective centers of the one or more circular surface sections in a spiral manner and are formed as depressions that are open towards the plane. An end of each of the channels has a channel opening, the channel openings being fluidically connected to a feed opening arranged at the end of a gas supply line. Additionally, the one or more surface sections are equipped with one or more influencing elements that influence the local heat transfer and are formed as open depressions on the plane or as insert pieces that plug into the depressions.

Abstract: A deposition apparatus includes a deposition chamber including a chuck and a vacuum enclosure connected to a vacuum pump system and enclosing the chuck, and a gas manifold configured to provide process gases to the vacuum enclosure, the process gases including a metal precursor gas. The gas manifold includes an in-line intermediate reaction compound generator that includes an inlet orifice into which the metal precursor gas is supplied and an exhaust orifice from which an intermediate reaction compound derived from the metal precursor gas exits into a gas inlet of the vacuum enclosure. The in-line intermediate reaction compound generator includes at least one metal portion connected to a heater configured to maintain the at least one metal portion at a temperature greater than 300 degrees Celsius during operation.

Abstract: Group 4 transition metal-containing film forming compositions are disclosed. The Group 4 transition metal-containing film forming compositions comprise Group 4 transition metal precursors having the formula L2-M-C5R4—[(ER2)m-(ER2)n—O]—, wherein M is Ti, Zr, or Hf bonded in an ?5 bonding mode to the cyclopentadienyl group; each E is independently C, Si, B or P; m and n is independently 0, 1 or 2; m+n>1; each R is independently a hydrogen or a C1-C4 hydrocarbon group; each L is independently a ?1 anionic ligand selected from the group consisting of NR?2, OR?, Cp, amidinate, ?-diketonate or keto-iminate, wherein R? is H or a C1-C4 hydrocarbon group; and adjacent R's may be joined to form a hydrocarbyl ring. Also disclosed are methods of synthesizing and using the disclosed precursors to deposit Group 4 transition metal-containing films on the substrates via vapor deposition processes.

Abstract: Apparatus and methods for gas distribution assemblies are provided. In one aspect, a gas distribution assembly is provided comprising an annular body comprising an annular ring having an inner annular wall, an outer wall, an upper surface, and a bottom surface, an upper recess formed into the upper surface, and a seat formed into the inner annular wall, an upper plate positioned in the upper recess, comprising a disk-shaped body having a plurality of first apertures formed therethrough, and a bottom plate positioned on the seat, comprising a disk-shaped body having a plurality of second apertures formed therethrough which align with the first apertures, and a plurality of third apertures formed between the second apertures and through the bottom plate, the bottom plate sealingly coupled to the upper plate to fluidly isolate the plurality of first and second apertures from the plurality of third apertures.

Abstract: The disclosed methods and apparatus improve the fabrication of solid fibers and microstructures. In many embodiments, the fabrication is from gaseous, solid, semi-solid, liquid, critical, and supercritical mixtures using one or more low molar mass precursor(s), in combination with one or more high molar mass precursor(s). The methods and systems generally employ the thermal diffusion/Soret effect to concentrate the low molar mass precursor at a reaction zone, where the presence of the high molar mass precursor contributes to this concentration, and may also contribute to the reaction and insulate the reaction zone, thereby achieving higher fiber growth rates and/or reduced energy/heat expenditures together with reduced homogeneous nucleation. In some embodiments, the invention also relates to the permanent or semi-permanent recording and/or reading of information on or within fabricated fibers and microstructures.

Abstract: A film forming apparatus includes: a stage configured to mount the substrate thereon; a raw material gas supply part that supplies a raw material gas to the substrate and adsorb the raw material gas onto the substrate, and includes divided supply portions configured to independently supply the raw material gas toward gas reception regions; raw material gas supply lines configured to supply the raw material gas in parallel toward the raw material gas supply part; concentration adjustment gas supply lines configured to supply a concentration adjustment gas for adjusting a concentration of the raw material gas toward the raw material gas supply part in a parallel relationship; and a reaction gas supply part configured to supply the reaction gas reacting with the raw material gas adsorbed onto the substrate to generate a reaction product constituting the thin film.

Abstract: Disclosed is a method for creating a textured press plate. Initially, a mask may be applied to a surface of a press plate. This mask typically corresponds to a desired physical surface structure. Thereafter, the masked surface of the press plate is processed to obtain the desired physical surface structure. Thereafter, various techniques may be used to create differing degrees of gloss in differing portions of the surface of the press plate. For example, matting may be used to decrease the degree of gloss of a portion of the surface, and polishing may be used to increase the degree of gloss of a portion of the surface.

Abstract: Various embodiments include a CO2 electrolyzer comprising: a gas space adjoining a cathode comprising a gas diffusion electrode adjoining a cathode space; an anode in an anode space; a membrane separating the cathode space from the anode space; a feed apparatus feeding reactant gas into the gas space; a mixing vessel for at least partial joint accommodation of the anolyte and the catholyte; and a connection line between the gas separating region and the gas space. The mixing vessel includes a gas separating region closed off with respect to a surrounding atmosphere. The cathode space accommodates a catholyte and the anode space accommodates an anolyte.

Abstract: A system to remove sodium and Sulfur from a feed stream containing alkali metal sulfides and polysulfides in addition to heavy metals. The system includes an electrolytic cell having an anolyte compartment housing an anode in contact with an anolyte. The anolyte includes alkali metal sulfides and polysulfides dissolved in a polar organic solvent. The anolyte includes heavy metal ions. A separator includes an ion conducting membrane and separates the anolyte compartment from a catholyte compartment that includes a cathode in contact with a catholyte. The catholyte includes an alkali ion-conductive liquid. A power source applies a voltage to the electrolytic cell high enough to reduce the alkali metal and oxidize Sulfur ions to allow recovery of the alkali metal and elemental sulfur. The ratio of sodium to Sulfur is such that the open circuit potential of the electrolytic cell is greater than about 2.3V.

Abstract: Described herein is a process for the reduction of carbon dioxide comprising: providing an electrochemical device comprising an anode, a cathode, and a polymeric anion exchange membrane therebetween, wherein the polymeric anion exchange membrane comprises an anion exchange polymer, wherein the anion exchange polymer comprises at least one positively charged group selected from a guanidinium, a guanidinium derivative, an N-alkyl conjugated heterocyclic cation, or combinations thereof; introducing a composition comprising carbon dioxide to the cathode; and applying electrical energy to the electrochemical device to effect electrochemical reduction of the carbon dioxide.

Abstract: A process for the separation of electrolyte from the carbon in a solid carbon/electrolyte cathode product formed at the cathode during molten carbonate electrolysis. The processes allows for easy separation of the solid carbon product from the electrolyte without any observed detrimental effect on the structure and/or stability of the resulting solid carbon nanomaterial.

Abstract: A electrolytic process for continuous production of lithium metal from lithium carbonate or other lithium salts by use of an aqueous acid electrolyte and a lithium producing cell structure which includes: a cell body with a cathode within the cell body; an electrolyte aqueous solution within the cell body, the solution containing lithium ion and an anion; and a composite layer intercalated between the cathode and the electrolyte aqueous solution, the composite layer comprising a lithium ion conductive glass ceramic (LI-GC) and a lithium ion conductive barrier film (LI-BF) that isolates cathode-forming lithium from the electrolyte aqueous solution.

Abstract: Reaction products of amines and polymers containing saturated heterocyclic moieties may be used as levelers in metal electroplating baths. The reaction products may plate metal with good surface properties and good physical reliability.

Abstract: Copper electroplating baths include reaction products of amines, polyacrylamides and sultones. The reaction products function as levelers and enable copper electroplating baths which have high throwing power and provide copper deposits with reduced nodules.

Abstract: Disclosed is a method for the production of electroplated components. In the disclosed method, an edge layer of a component to be coated is subjected to a mechanical treatment in which the edge layer is deformed at least in portions, consequently the structure of the edge layer being modified at least in portions and hydrogen traps being produced in the modified portions of the edge layer.

Abstract: A method for forming electroplated copper on a surface of non-metal materials by graphene-based plating ink is revealed. A graphene-based plating ink is prepared by modified functionalized graphene and then sprayed on a surface of a non-metal material. Next dry the graphene-based plating ink sprayed on the non-metal material. A layer of electroplated copper is formed on a surface of the graphene-based plating ink by plating. The method uses graphene-based plating ink as a conductor of the electroplated copper and increases adhesion between functionalized graphene contained in the graphene-based plating ink and the non-metal material by modification. During plating, no heavy metal is used as catalyst so that the method is environmentally friendly and cost-saving. The graphene-based plating ink with excellent adhesion and higher flexibility can be attached to the surface of the non-metal material firmly and used as an adhesive between electroplated copper and the non-metal material.

Abstract: A steel sheet for cans which exhibits excellent weldability; and a production method therefore include the surface of a steel sheet in order from the steel sheet side, a chromium metal layer and a hydrous chromium oxide layer. The deposited amount of the chromium metal layer is 50-200 mg/m2. The deposited amount of the hydrous chromium oxide layer in terms of chromium is 3-30 mg/m2. The chromium metal layer includes: a base part having a thickness of 7.0 nm or higher; and granular protrusions which are on the base part, have a maximum grain size of 200 nm or lower, and have a number density per unit area of at least 30 per ?m2.

Abstract: A workpiece holding jig includes a back panel and a frame body, the frame body includes a main body having an annular shape, a conductive member provided all over the main body, a contact member provided along the conductive member, the contact member being electrically connected to the conductive member to come into electrical contact with a peripheral portion of the workpiece, and a seal member provided all over the main body and located on an inner side of the main body relative to the contact member, the frame body is adapted to form a sealed space that accommodates the peripheral portion of the workpiece, the conductive member, and the contact member in a state where the seal member and the contact member are in contact with the peripheral portion, and the frame body includes a liquid inlet through which a liquid is injected into the sealed space.

Abstract: A container such as a barrel or drum is provided for processing of solid material or parts with a liquid. The container is designed with grooves leading to holes or slots in the side that draw liquid into the container due to the rotation of the container when it is immersed in a tank of liquid. The holes or slots have a small dimension in the direction of rotation to minimize the probability of solid material coming out of the container. The fluid flow caused by the rotation serves to increase the rate of solution replacement inside the container as well as to keep the solid material from falling out through the holes or slots. The container disclosed is useful in processes in the plating, etching, leaching, and surface finishing industries.

Abstract: A method of monitoring a plating bath, the method including receiving a plurality of plated test specimens that are each plated in different batches within the plating bath. The different batches are processed in a batch sequence, and at least one plated test specimen is plated in each batch processed in the plating bath. The method also includes performing a load test on each plated test specimen, wherein the load tests are initiated in a load test sequence that corresponds to the batch sequence, and determining a health status of the plating bath based on results of the load tests.

Abstract: A single crystal is pulled by an FZ method, in which a polycrystal is melted by means of an electromagnetic melting apparatus and then recrystallized, wherein a first phase (P1) a lower end of the polycrystal, which is moved toward the melting apparatus, is melted by the melting apparatus to form a drop, and in a second phase (P2) a monocrystal line seed is attached to the lower end of the polycrystal and is melted beginning from an upper end of the seed, where a power (P) of the melting apparatus during the first phase (P1) and during the second phase (P2) is predetermined at least temporarily in dependence on a temperature and/or geometrical dimensions of crystal material used which comprises the drop and/or the seed and/or the polycrystal.

Abstract: The invention relates to a silicon wafer having a radial variation of oxygen concentration of less than 7%, determined over the entire radius of the silicon wafer. The wafers are produced in the PV region with rotation of crystal and crucible in the same direction, and in the presence of a horizontal magnetic field of defined intensity.

Abstract: The present application provides a reflective screen of a monocrystal growth furnace and the monocrystal growth furnace. The reflective screen comprises an inner cylinder, an outer cylinder, a thermal insulating material sandwiched between the inner and the outer cylinders, and a thermal insulating pad disposed at the joint of the inner and the outer cylinders. The reflective screen and the monocrystal growth furnace are able to decrease the thermal transmittance from the outer cylinder to the inner cylinder, increase the vertical temperature gradient of the ingot, and prevent or decrease the silicon oxides evaporated from the molten silicon to condensate on the outer cylinder of the reflective screen. Thereby, polycrystalline caused by the oxides falling into the molten silicon can be reduced. Moreover, the thermal power required during the growth of monocrystalline silicon can be reduced because of the reduction of unnecessary thermal transmittance.

Abstract: This invention provides method, device, system, and computer storage medium for crystal growth control of a shouldering process.

Abstract: A vapor phase growth apparatus includes n (n is an integer of 2 or more) reactors; a primary gas supply path supplying a mixed gas to the reactors; n secondary gas supply paths connected to one of the reactors including a main secondary gas supply path and (n?1) auxiliary secondary gas supply paths; a first pressure gauge; a main flow rate controller provided in the main secondary gas supply path; (n?1) auxiliary flow rate controllers provided in the auxiliary secondary gas supply paths; a first control circuit instructing a first flow rate value; and a second control circuit calculating a second flow rate value being 1/n of a sum of a flow rate value measured by the main flow rate controller and flow rate values measured by the auxiliary flow rate controllers, and instructing the second flow rate value to the auxiliary flow rate controllers.

Abstract: A SiC epitaxial wafer includes: a substrate having an off angle of less than 4 degrees; and a SiC epitaxial growth layer disposed on the substrate having the off angle of less than 4 degrees, wherein an Si compound is used for a supply source of Si, and a C compound is used as a supply source of C, for the SiC epitaxial growth layer, wherein the uniformity of carrier density is less than 10%, and the defect density is less than 1 count/cm2; and a C/Si ratio of the Si compound and the C (carbon) compound is within a range of 0.7 to 0.95. There is provide a high-quality SiC epitaxial wafer excellent in film thickness uniformity and uniformity of carrier density, having the small number of surface defects, and capable of reducing costs, also in low-off angle SiC substrates on SiC epitaxial growth.

Abstract: Provided is an SiC composite substrate 10 having a monocrystalline SiC layer 12 on a polycrystalline SiC substrate 11, wherein: some or all of the interface at which the polycrystalline SiC substrate 11 and the monocrystalline SiC layer 12 are in contact is an unmatched interface I12/11 that is not lattice-matched; the monocrystalline SiC layer 12 has a smooth obverse surface and has, on the side of the interface with the polycrystalline SiC substrate 11, a surface that has more pronounced depressions and projections than the obverse surface; and the close-packed plane (lattice plane 11p) of the crystals of the polycrystalline SiC in the polycrystalline SiC substrate 11 is randomly oriented with reference to the direction of a normal to the obverse surface of the monocrystalline SiC layer 12. The present invention improves the adhesion between the polycrystalline SiC substrate and the monocrystalline SiC layer.

Abstract: A SiC single crystal manufacturing apparatus of the present invention is a SiC single crystal manufacturing apparatus that manufactures a SiC single crystal by performing crystal growth on a growth surface of a seed crystal disposed inside a crucible, and the crucible 1 is able to accommodate a raw material M for a SiC single crystal therein, and includes a crucible lower portion 1A and a crucible upper portion 1B, the crucible lower portion including a bottom portion 1Aa and a side portion 1Ab, and the crucible upper portion including a top portion 1Ba provided with a seed crystal installation portion 1Bc for installing a seed crystal SD and a side portion 1Bb.

Abstract: A method for making nonwoven fabric. The nonwoven fabric can include three-dimensional features that define a microzone comprising a first region and a second region. The first and second regions can have a difference in values for an intensive property. The nonwoven further has a plurality of apertures, wherein at least a portion of the aperture abuts at least one of the first region and the second region of the microzone.

Abstract: The invention relates to flame-retardant cellulosic man-made fibers containing a flame-retardant substance in the form of an oxidized condensate of a tetrakis hydroxyalkyl phosphonium salt with ammonia and/or a nitrogenous compound which contains one or several amine groups whereby the fiber has a tenacity of more than 18 cN/tex in a conditioned state. Production process and the use of the fibers according to the invention are further objects of the invention.

Abstract: The present invention relates to a fabric, such as a backing suitable for tufted carpets or artificial turf, comprising slit films, tapes or monofilaments, said slit film, tape or monofilament comprising at least 70% by weight of a metallocene-catalyzed polyethylene composition based on the total weight of the slit film, tape or monofilament. The metallocene-catalyzed polyethylene composition comprised in the slit film, tape or monofilament is a metallocene-catalyzed polyethylene composition comprises: a) at least 45% by weight based on the total weight of the metallocene-catalyzed polyethylene composition of a metallocene-catalyzed polyethylene A, wherein said metallocene-catalyzed polyethylene A has a density of at most 0.918 g/cm3, and a melt index MI2 of at most 4.

Abstract: A novel process is disclosed for extruding an absorbable glycolide/lactide block copolymer into multifilament suture fibers. The block copolymer preferably consists of about 50/50 mole % of Glycolide/Lactide in the center segment and the overall composition of the copolymer is about 90/10 mole % Glycolide/Lactide. The novel extrusion process comprises the steps of maintaining the temperatures of at least two, preferably three or more, of the extrusion zones in the range of about 5-50° C. below the polymer melting point. The multifilament suture made with the invention process from the segmented, glycolide-rich, poly(glycolide-co-lactide) copolymers of A-B-A type, where the B-segment is an amorphous prepolymer of glycolide and lactide in the molar ratio of about 50/50 glycolide/lactide, exhibit exceptionally high breaking strength retention (BSR) at 42 days post-implantation.

Abstract: A method for preparing a cable formed of carbon nanotubes, comprising decomposing at least one carbon precursor compound and at least one precursor compound of a catalyst on a porous substrate (43), in which method continuously:—a first gas stream comprising a precursor of a catalyst is brought into contact with a porous substrate (43);—a second gas stream comprising at least one carbon precursor is brought into contact with said porous substrate (43);—said porous substrate (43) is heated to a temperature leading to the deposition of catalyst particles and the catalytic growth of a carbon nanotube bundle, and preferably between 500° C. and 1000° C.