Abstract: A method for forming a diamond-like carbon (DLC) coating on an article is provided, comprising: alternatingly performing a deposition process and an ashing process on the article a determined number of times, wherein during the deposition process the method proceeds by forming on the article a layer of DLC which includes graphitic sp2 carbon and tetrahedral sp3 carbon, and during the ashing process the method proceeds by selectively etching the graphitic sp2 carbon, wherein the determine number of time is configured to result in a designated overall thickness of the DLC coating.

Abstract: The present invention relates to a member for a plasma etching device and a method of manufacturing the same, and more particularly to a member for a plasma etching device, which is improved in plasma resistance through deposition of a rare-earth metal thin film and surface heat treatment and the optical transmittance of which is maintained, thus being useful as a member for analyzing the end point of an etching process, and a method of manufacturing the same.

Abstract: A chemical vapor deposition system for semiconductor wafer production is disclosed. The system includes a process cluster coupled to a first end of a transfer chamber. The process cluster is maintained at a pressure that is lower than atmospheric pressure. The process cluster is also configured to apply epitaxial layers on one or more wafers loaded onto a wafer carrier. The system also includes an automatic factory interface coupled to a second end of the transfer chamber. The automatic factory interface is maintained at atmospheric pressure. The system includes one or more wafer carrier cleaning modules coupled to the automatic factory interface and configured to clean one or more of the wafer carriers without removing the wafer carriers from the chemical vapor deposition system.

Abstract: A method of forming graphene includes providing, in a reaction chamber, a non-catalyst substrate at least partially including a material that does not catalyze growth of graphene, and directly growing graphene on a surface of the non-catalyst substrate based on injecting a reaction gas into the reaction chamber. The reaction gas includes a carbon source having an ionization energy equal to or less than about 10.6 eV in a plasma-enhanced chemical vapor deposition (PECVD) process.

Abstract: Provided is a method for forming a silicon oxycarbonitride film (SiOCN) with varying proportions of each element, using a disilane precursor under vapor deposition conditions, wherein the percent carbon incorporation into the SiOCN film may be varied between about 5 to about 60%, by utilizing co-reactants chosen from oxygen, ammonia, and nitrous oxide gas. The carbon-enriched SiOCN films thus formed may be converted to pure silicon dioxide films after an etch stop protocol by treatment with O2 plasma.

Abstract: Aspects of the present disclosure include methods, apparatuses, and computer readable media for transporting, via an automated crane, a component toward a first station within a cleaning system, placing, via the automated crane, the component into a first tank at the first station, wherein the first tank contains a solution that cleans the component by removing at least a portion of residual materials on the component, transporting, via the automated crane, the component toward a second station within a cleaning system, placing, via the automated crane, the component into a second tank at the second station, wherein the second tank contains a fluid that rinses the at least a portion of the residual materials removed by the solution, transporting, via the automated crane, the component toward a third station within a cleaning system, and placing, via the automated crane, the component into a chamber at the third station, wherein the chamber provides a gas or air that dries the fluid on the component.

Abstract: A film deposition apparatus includes a process chamber, and a turntable in the process chamber to receive a substrate. An exhaust port is provided outside the turntable to evacuate the process chamber. An exhaust box is provided in a space between a ceiling surface of the process chamber and the surface of the turntable so as to surround a certain region along the circumferential direction and a radial direction by side walls so as to include a region upstream of the exhaust port in a rotational direction of the turntable. A gas supply unit to supply a gas into the exhaust box is provided. The exhaust box includes an outflow port in a side wall closest to the exhaust port such that a conductance of a gas flowing from the exhaust box increases with increasing distance from the exhaust port.

Abstract: A method of forming a protective coating film for halide plasma resistance includes depositing a seed layer on a surface of an article via an atomic layer deposition (ALD) process, depositing a rare-earth containing oxide layer on the seed layer via an ALD process, and exposing the rare-earth containing oxide layer to fluorine-containing plasma.

Abstract: A method is described for selectively forming alumina film layers on a silicon oxide surface by atomic layer deposition (ALD) in the presence of a metal-containing surface when each surface is exposed to the ALD reactants (i.e., a blocking layer is not used to prevent ALD reactants from contacting the metal-containing layer). Also described are methods of determining conditions for area-selective atomic layer deposition (AS-ALD) on a substrate containing two or more different surface materials using a database of ALD reactions.

Abstract: A valve device with a built-in orifice is manufacturable with low-cost. The valve body defines an accommodation recess which opens at the surface of the valve body and contains a valve element therein, a primary flow path and a secondary flow path connected to the accommodation recess, the valve element having a sealing portion for blocking direct communication between the primary flow path and the secondary flow path through the accommodation recess, and a through flow passage for making the primary flow path and the secondary flow path communicate through the valve element, wherein an orifice is formed in the through flow passage.

Abstract: A chemical vessel is disclosed comprising a dip tube and a level sensor tube arranged in an elongated counterbore incorporated into a housing of the chemical vessel. The chemical vessel may be configured to allow a pushback routine to take place, whereby a level of liquid in the chemical vessel is reduced to a point that the dip tube is free from liquid inside the dip tube or at the bottom of the dip tube. Once the dip tube is free of the liquid, then a vacuum source may be used to purge vapor within the chemical vessel without the risk of damage to the vacuum source.

Abstract: A composition for application to a substrate comprising a carrier, a permanganate ion source, and a corrosion inhibitor comprising a rare earth ion, an alkali metal ion, an alkaline earth metal ion, and/or a transition metal ion is disclosed. A substrate or article including the composition for application to a substrate, and a method of treating a substrate comprising applying the composition to a substrate to form a permanganate treated surface of the substrate, and applying a lithium containing composition on the permanganate treated surface are also disclosed.

Abstract: A surface-coated cutting tool in which a hard coating layer exhibits exceptional adhesion resistance and anomalous damage resistance is provided. This surface-coated cutting tool includes a tool body composed of a WC based cemented carbide or a TiCN based cermet; and at least one hard coating layer provided on a surface of the tool body, and; 1) the hard coating layer includes at least one complex nitride layer, 2) the complex nitride layer contains 0.001 to 0.030 atom % of chlorine, 3) in the complex nitride layer, an area ratio of longitudinal crystal grains having an aspect ratio equal to or greater than 2 occupying a longitudinal cross section is 50% or more, and 4) a layer thickness of the complex nitride layer is 0.2 ?m to 20 ?m.

Abstract: Certain metal surfaces are often unable to be effectively contacted with fluids containing hydrofluoric acid due to significant corrosion issues. Titanium and titanium alloy surfaces represent but one example. Corrosion inhibitor compositions comprising boron-hydroxyalkyl(amine) compound(s) can be used to suppress such metal corrosion, including that taking place on titanium and titanium alloy surfaces, particularly those in a wellbore or in fluid communication with a wellbore.

Abstract: Systems and processes for the production of hydrogen (H2) gas and oxygen (O2) gas from an aqueous electrolyte solution are described. A water-splitting system can include a reactor that includes H2 and O2 generating chambers that can be separate chambers but are not separated by a H2 and/or O2 gas permeable material. The H2 generating chamber can include a cathode and at least a first fluid inlet. The O2 generating chamber can include an anode in electrical communication with the cathode and at least a first fluid inlet. The first and second fluid inlets can each be configured to receive a purged electrolyte solution, a purge gas, or a mixture thereof.

Abstract: The present invention provides a chlorine dioxide manufacturing device that can accurately control the amount of chlorine dioxide produced. The present invention provides a chlorine dioxide gas manufacturing device comprising an electrolysis chamber, a liquid surface level measuring chamber, and a bubbling gas feeding device. The electrolysis chamber and the liquid surface level measuring chamber each comprises an electrolytic solution and a gas, wherein the electrolytic solution comprises an aqueous chlorite solution, and the electrolysis chamber and the liquid surface level measuring chamber are joined to each other above each liquid surface via a gas piping and joined to each other below each liquid surface via an electrolytic solution piping so that the height of the electrolytic solutions contained in each chamber are substantially equal.

Abstract: A composition including copper(I) 5-nitrotetrazolate, wherein the composition has a carbon content of less than 7 weight percent, based on a total weight of the copper(I) 5-nitrotetrazolate.

Abstract: A platform technology that uses a novel membrane electrode assembly including a cathode layer comprising a reduction catalyst and a first anion-and-cation-conducting polymer, an anode layer comprising an oxidation catalyst and a cation-conducting polymer, a membrane layer comprising a cation-conducting polymer, the membrane layer arranged between the cathode layer and the anode layer and conductively connecting the cathode layer and the anode layer, in a COx reduction reactor has been developed. The reactor can be used to synthesize a broad range of carbon-based compounds from carbon dioxide.

Abstract: Fabricating a doped bismuth vanadate electrode includes spray coating a substrate with an aqueous solution with vanadium-containing anions and bismuth-containing cations to yield a coated substrate, heating the coated substrate to form crystalline bismuth vanadate on the substrate, and doping the crystalline bismuth vanadate with lithium ions to yield a doped bismuth vanadate electrode.

Abstract: A two-dimensional metal-organic framework (2D MOF) includes a first transition metal M1 and a second transition metal M2. The first transition metal and the second transition metal are different and are coupled by a linker group L to yield a two-dimensional metal-organic framework alloy having a formula M1xM21-xL, where 0<x<1. Each transition metal is dispersed uniformly throughout the 2D MOF. The 2D MOF is synthesized by combining a first transition metal precursor, a second transition metal precursor, and a linker; agitating the solution; and heating the solution to yield a crystalline two-dimensional metal-organic framework alloy.

Abstract: Articles prepared by additive manufacturing of preforms that are coated by electrodeposition of nanolaminate materials, and methods of their production are described.

Abstract: The present disclosure provides electrolyte solutions for electrodeposition of zinc-iron alloys, methods of forming electrolyte solutions, and methods of electrodepositing zinc-iron alloys. An electrolyte solution for electroplating can include an alkali metal citrate, an alkali metal acetate, a citric acid, and glycine with a metal salt. An electrolyte solution can be formed by dissolving an alkali metal citrate, an alkali metal acetate, a citric acid, and glycine in water or an aqueous solution. Electrodepositing zinc-iron alloys on a substrate can include introducing a cathode and an anode into an electrolyte solution comprising an alkali metal citrate, an alkali metal acetate, a citric acid, and glycine. Electrodepositing can further include passing a current between the cathode and the anode through the electrolyte solution to deposit zinc and iron onto the cathode.

Abstract: Some embodiments are directed to techniques for building single layer or multi-layer structures on dielectric or partially dielectric substrates. Certain embodiments deposit seed layer material directly onto substrate materials while others use an intervening adhesion layer material. Some embodiments use different seed layer and/or adhesion layer materials for sacrificial and structural conductive building materials. Some embodiments apply seed layer and/or adhesion layer materials in what are effectively selective manners while others apply the materials in blanket fashion. Some embodiments remove extraneous material via planarization operations while other embodiments remove the extraneous material via etching operations. Other embodiments are directed to the electrochemical fabrication of multilayer mesoscale or microscale structures which are formed using at least one conductive structural material, at least one conductive sacrificial material, and at least one dielectric material.

Abstract: A metallic terminal includes a terminal body, a first plating layer, a second plating layer, and a third plating layer. The first plating layer is on the terminal body, and the thickness of the first plating layer at the bent portion of the terminal body is 0.3 to 1.75 micrometers, and the thickness of rest portions of the first plating layer is 2 to 10 micrometers. The second plating layer is on the first plating layer and corresponds to the contact portion of the terminal body, and the thickness of the second plating layer is 0.5 to 2 micrometers. The third plating layer is on the first plating layer and corresponds to the soldering portion of the terminal body, and the thickness of the third plating layer is 0.01 to 0.1 micrometers. A manufacturing method of metallic terminal is also provided.

Abstract: The present invention relates to a method of forming an anodic oxidation coat having excellent corrosion resistance and insulation properties on the surface of an aluminum or aluminum alloy member, and to an aluminum or aluminum alloy member having an anodic oxidation coat manufactured using the method. More particularly, the present invention relates to a method of forming an anodic oxidation coat having high hardness and excellent corrosion resistance and insulation properties without internal defects in an anodic oxidation coating layer, and to an internal member of a device for manufacturing a semiconductor or a display, the internal member being coated with an anodic oxidation coat manufactured using the method.

Abstract: A plating apparatus for depositing metal on a substrate, comprising a membrane frame (14), a catholyte inlet pipe (30) and a center cap (40). The membrane frame (14) has a center passage (144) which passes through the center of the membrane frame (14). The catholyte inlet pipe (30) is connected to the center passage (144) of the membrane frame (14). The center cap (40) is fixed at the center of the membrane frame (14) and covers over the center passage (144) of the membrane frame (14). The top of the center cap (40) has a plurality of first holes (42). The catholyte inlet pipe (30) supplies catholyte to the center cap (40) through the center passage (144) of the membrane frame (14), and the catholyte is supplied to a center area of the substrate through the first holes (42) of the center cap (40).

Abstract: Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density ?100 cm?2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.

Abstract: An epitaxial growth apparatus that can provide an improved thickness uniformity of an epitaxial film is provided. An epitaxial growth apparatus in accordance with the present disclosure includes a susceptor 20 and a preheat ring 60 surrounding a side of the susceptor 20 having a gap interposed therebetween. A width of the gap at least in part between the susceptor 20 and the preheat ring 60 is set to be longer than a width w1 of the gap between the susceptor 20 and the preheat ring 60 in the vicinity of the reactant gas inlet.

Abstract: According to one aspect of the present invention, a method of producing a particle-shaped diamond single-crystal using chemical vapor deposition (CVD). According to one embodiment, the method includes disposing a single-crystal diamond grit seed on a stage substrate in a diamond synthesis chamber and three-dimensionally growing the single-crystal diamond grit seed to a particle-shaped diamond single-crystal by introducing a source gas into the chamber.

Abstract: A method for processing a wafer includes subjecting the wafer to a reduction treatment with heat and a reducing agent that has a melting point of lower than 600° C. The wafer is made of a material selected from the group consisting of lithium tantalate, lithium niobate, and a combination thereof. The wafer and the reducing agent are spaced apart from each other so that the reducing agent indirectly interacts with the wafer during the reduction treatment. Also disclosed is a processed wafer obtained by the method.

Abstract: The invention relates to a crucible for crystal growth and a method for releasing thermal stress of silicon carbide crystals. The crucible is a crucible in contact with the side surface of the prepared crystals, and the crucible has an annular non-closed splicing structure. The crucible for the crystal growth has the annular non-closed splicing structure, so that the crystals can be prevented from being hooped, hot stress concentrated in the crystals in the growth process of the crystals can be effectively released, the fracturing rate of the crystals can be reduced, and the finished product rate of the crystals can be increased.

Abstract: A fabrication method for a filter containing tragacanthin-polyvinyl alcohol (PVA) nanofibers includes obtaining a homogenous tragacanthin-PVA solution by obtaining a PVA solution by dissolving PVA in distilled water, and adding tragacanthin to the PVA solution. The method may further include obtaining a support layer by coating a stainless steel mesh with a thin layer of a hydrophobic polymer, coating a stainless steel mesh with the thin layer of the hydrophobic polymer comprising electrospinning a hydrophobic polymer solution onto the stainless steel mesh, and forming a tragacanthin-PVA nanofibrous web on the support layer by electrospinning the homogenous tragacanthin-PVA solution onto the support layer.

Abstract: Provided is a filamentary tape (10) comprising liquid crystal polyester fiber multifilaments (1), in which bundles of the fibers aligned in one direction are unified into a tape shape. The filamentary tape (10) comprises the multifilaments (1) including a plurality of liquid crystal polyester fibers aligned in one direction are unified by partial fusion between the liquid crystal polyester fibers.

Abstract: An apparatus useful in treating a carbon fibre precursor material under predetermined conditions of temperature and gaseous environment. The apparatus includes a housing, and a reaction chamber disposed within the housing. The reaction chamber is elongate and has an entry port at a first end and an exit port at a second end. The entry and exit ports are configured to allow passage of a carbon fibre precursor material into and out of the reaction chamber respectively. A heater or heating system is configured to heat a wall of the reaction chamber. In use, a precursor material is passed through the reaction chamber and is thereby heated.

Abstract: A service unit is provided as well as a method for controlling a service unit performing various service activities at one workstation on a textile machine having several workstations, in which case the service activities and movement orders to be carried out by the service unit are prioritized by a controller unit. In order to provide a method for controlling a service unit performing various service activities and movement orders as well as a service unit with a controller device for carrying out movement orders and service orders, which enable adjustment and maintenance work to be carried out quickly on the service unit, there is provision for avoidance maneuvers and parking orders to be carried out with the highest priority and manually set service activities and movement orders to be carried out with high priority.

Abstract: In one aspect, a method of manufacturing a protective textile may include steps of (a) twisting a first yarn with a tungsten filament; and (b) using a second yarn to cover the yarn-tungsten product generated in step (a). The yarn generated in step (b) is further twisted with an elastic spandex. In one embodiment, the first yarn is selected from a group of Nylon, Polyethylene Terephthalate (PET), cotton yarn, bamboo fiber and Tencel. In another embodiment, a Polyethylene (PE) fiber is the second yarn, and the third yarn may include Nylon, PET or PE. The protective textile is advantageous because it is light, thin, soft and highly cut resistant. Also, it has great electrical conductivity and chemical stability, and it is not easy to deform after washing.

Abstract: A multi-layer ballistic woven fabric, including an upper woven layer having upper warp yarns and upper weft yarns that are interwoven together to form the upper woven layer. The multi-layer ballistic woven fabric also includes a lower woven layer having lower warp yarns and lower weft yarns that are interwoven together, and a plurality of securing yarns, each securing yarn interwoven with at least some of the upper yarns and some of the lower yarns so as to secure the upper and lower woven layers together. At least one of the securing yarns is woven underneath a first lower weft yarn, then above a second upper weft yarn adjacent the first lower weft yarn, then underneath a third lower weft yarn adjacent the second upper weft yarn and then above a fourth upper weft yarn adjacent the third lower weft yarn. The multi-layer ballistic woven fabric is formed by interweaving the securing yarns with the warp yarns and weft yarns as the upper woven layer and lower woven layer are made.

Abstract: The invention provides a textile panel including a knitted or woven textile layer (12) having yarn of a first type (14), and a coating applied to at least one face of the textile layer. The textile layer includes at least one textile sensor (18) formed by an electrically conductive region of the textile layer which includes yarn (16) of a second type incorporated in the knit or weave of the textile layer, the second type of yarn being electrically conductive. The invention also provides a method of manufacturing a textile panel, including knitting or weaving a textile layer (12) using a first type of yarn (14) and a second type of yarn (16), the second type of yarn being incorporated in the knit or weave of the textile layer in at least one predetermined region to form a textile sensor, the method further including applying a coating to the textile layer.

Abstract: A base fabric, having a coefficient of variation CV1 (100×standard deviation/average value) of 3.0% or less in a length direction of a weft-direction disintegrated yarn strength and a coefficient of variation CV2 (100×standard deviation/average value) of 4.0 or less in a length direction of a weft-direction disintegrated yarn elongation.

Abstract: A weft detection sensor is provided that detects a passage of a weft to determine a passage timing of a weft circulating around a storage drum, and a weft insertion method includes setting in advance a reference value of a set position arrival timing in association with a set arrival position, regarding the set arrival position and the set position arrival timing at which a leading edge of the weft reaches the set arrival position, and determining an actual value of the set position arrival timing from the passage timing determined in weft insertion during weaving, comparing the actual value with the reference value, and in a case where a deviation occurs between the actual value and the reference value, determining a correction amount of a set value of a weft insertion related device based on the deviation so that the deviation decreases.

Abstract: A knitted component comprising a spacer knit construction having a first knitted layer and a second knitted layer facing opposite the first knitted layer, the second knitted layer spaced relative to the first knitted layer and defining a cavity therebetween, and a spacer strand traversing the cavity between the first knitted layer and the second knitted layer to secure the first knitted layer to the second knitted layer. The first knitted layer is at least partially formed with a first monofilament and a second monofilament such that both of the first monofilament and the second monofilament are exposed on an outer surface of the first knitted layer. The first monofilament comprises a first denier and the second monofilament comprises a second denier, the first denier being at least 250% greater than the second denier.

Abstract: A knitted spacer fabric has an upper knitted cover layer and a knitted lower cover layer, said cover layers being connected to one another by pile threads, wherein the cover layers are connected to one another by way of at least two different pile threads having dissimilar elasticity properties, and the cover layers are both knitted in a single-threaded or multiple-threaded manner across the entire area.

Abstract: A method for forming an article where a friable material is supported by or enclosed by a non-friable material. The article comprises one or more layers of non-friable fibers surrounding the friable material fibers wherein at least some of the non-friable fibers are oriented in a Z plane and at least some of the non-friable fibers are oriented in an XY plane. The fibers are oriented in the Z plane via a felting process such as needle punching through the assembly of the article. The resulting article is a non-woven article even where one or more layer for the article was provided as woven or non-woven layer of fibers.

Abstract: A nonwoven web comprising a layer of polymeric fibers, wherein, based on the total number of polymeric fibers, at least 10% the polymeric fibers in said layer are coarse fibers having a fiber diameter of 4 ?m or more, and at least 10% of the polymeric fibers in said layer are fine fibers having a fiber diameter of 2 ?m or less. Also described herein is a method for making the nonwoven web, comprising melt-blowing a polymer mixture comprising two immiscible or partially miscible polymers.

Abstract: Felting assembly for a sewing machine. In some embodiments, a felting assembly may include a felting needle clamp including one or more felting needles. The felting assembly may also include a needle plate defining one or more needle openings arranged to allow the one or more felting needles to reciprocate therethrough. The needle plate may be configured to be attached to a sewing machine over a rotary hook of the sewing machine. The felting assembly may also include a connector configured to attach the felting needle clamp to a needle bar of the sewing machine such that the felting needle clamp is offset from the rotary hook of the sewing machine to avoid the one or more felting needles from contacting the rotary hook when the one or more felting needles are reciprocated through the one or more needle openings in the needle plate.

Abstract: A sewing machine comprises a crank shaft, a first drive shaft, a second drive shaft, a needle assembly, a presser foot, and an upper walking foot. A first crank arm assembly is connected to the crank shaft to the first drive shaft. A first linkage assembly is connected to the first drive shaft to the needle assembly. A second crank arm assembly is connected to the first drive shaft to the second drive shaft. A second linkage assembly is connected to the second drive shaft to the presser foot and the upper walking foot. The second linkage assembly is configured to cause out-of-phase reciprocatory movement of the presser foot and the upper walking foot. The second crank arm assembly has a variable length that is selectably adjustable by an operator to yield at least first and second different stepping heights of the upper walking foot.

Abstract: A denim vintage wash device includes a washing drum and a plurality of friction elements. The washing drum is rotationally installed in a machine body that is connected with an inlet tube through which water is fed into the washing drum. The plurality of friction elements are accommodated in the washing drum and consist of bamboo pieces. In practice, the washing drum in which denim clothes to be contacted by the friction elements are placed and water is filled is enabled to rotate. Then, the denim clothes rubbed by the friction elements are faded and/or outworn.

Abstract: A laundry system for dispensing one or more ingredient compositions from ingredient reservoirs for supplying to a washing machine drum, the laundry system comprising: (i) an apparatus which comprises a dispensing device and multiple ingredient reservoirs; (ii) said multiple ingredient reservoirs containing the various ingredient compositions in controllable fluid communication with the dispensing device and each ingredient reservoir comprising at least one ingredient reservoir identifier; (iii) said dispensing device being operable to selectively dispense portions of the ingredient compositions from respective ingredient reservoirs as a result of commands by the user to provide a dose of laundry product, and further comprising (iv) an ingredient reservoir control system for controlling said selective dispensing of respective ingredient compositions from specific ingredient reservoirs identified by respective ingredient reservoir identifiers such that the device can selectively dispense ingredient compositions

Abstract: The present disclosure discloses a method for washing clothing by an intelligent clothing washing management device, comprising following steps. The method includes selecting one or more of categories of clothing displayed on a clothing module and displaying a selected clothing model in an area to be washed. The method also includes clicking on a start item, a washing procedure recommendation module analyzing and automatically recommending washing parameters according to the selected clothing model. The method further includes applying the washing parameters displayed and recommended, a processing module receiving washing parameters recommended by the washing procedure recommendation module and controlling a washing device; wherein the washing parameters at least include washing time, washing temperature and rotation speed.

Abstract: Disclosed is a washing machine having an improved wire connection structure for electrically connecting electrical components. The washing machine includes a cabinet which has a first electrical component, forms an exterior, and has an opening through which laundry is inserted; a door provided with a second electrical component, and configured to open and close the opening; a wire which electrically connects the first electrical component and the second electrical component; and a hinge which has a wire guide portion for coupling the door to the cabinet so as to be rotatable about a rotating axis and for guiding the wire.