Abstract: A substrate accommodation device includes a casing, a gas supply that supplies a gas into the casing, and a transfer structure which retains substrates vertically spaced apart from each other and vertically transfers the substrates first-in-first-out from a carry-in position to a carry-out position within the casing. The gas heats or cools the substrates as the substrates are transferred first-in-first-out from the carry-in position to the carry-out position.

Abstract: A storage device for use with at least one batch furnace for batch treatment of wafers supported in a wafer boat is disclosed. The storage device comprises a cassette storage carousel for storing a plurality of wafer cassettes on rotatable platform stages. A carousel housing bounds a mini-environment chamber in which the platform stages are accommodated. A gas recirculation circuit of the storage device subsequently comprises a gas inlet channel, a gas inlet filter, the mini-environment chamber, a plurality of gas outlet openings in a bottom wall of the carousel housing, a plenum housing bounding a plenum chamber, a plenum chamber outlet, a gas circulation pump connecting the plenum chamber outlet to an inlet end of the gas inlet duct.

Abstract: Systems and methods are provided for dynamically compensating position errors of a sample. The system can comprise one or more sensing units configured to generate a signal based on a position of a sample and a controller. The controller can be configured to determine the position of the sample based on the signal and in response to the determined position, provide information associated with the determined position for control of one of a first handling unit in a first chamber, a second handling unit in a second chamber, and a beam location unit in the second chamber.

Abstract: A workpiece carrier suitable for high power processes is described. It may include a puck to carry the workpiece, a plate bonded to the puck by an adhesive, a mounting ring surrounding the puck and the cooling plate, and a gasket between the mounting ring and the plate, the gasket configured to protect the adhesive.

Abstract: Implementations of the present disclosure include methods and apparatuses utilized to reduce cracking of the substrate support surface of a high temperature electrostatic chuck within a processing chamber. In one implementation, a high temperature electrostatic chuck has a ceramic body. The ceramic body has a workpiece mounting surface and a bottom surface. A plurality of backside gas channels are formed in the workpiece mounting surface. A chucking mesh disposed in the ceramic body has a main chucking portion spaced a first distance from the workpiece mounting surface and an electrode mounting portion spaced a second distance from the workpiece mounting surface, wherein the second distance is greater than the first distance. An electrode is coupled the electrode mounting portion and is accessible from the bottom surface.

Abstract: A method of forming a semiconductor device includes following steps. Firstly, a substrate is provided and the substrate has a first semiconductor layer formed thereon. Next, an isolating structure is formed in the first semiconductor layer, and a sacrificial layer is formed on the first semiconductor layer by consuming a top portion of the first semiconductor layer. Then, the sacrificial layer is removed to form a second semiconductor layer, and a portion of the isolating structure is also removed to form a shallow trench isolation (STI), with a top surface of the shallow trench isolation being substantially coplanar with a top surface of the second semiconductor layer.

Abstract: An apparatus includes a first trench formed in a semiconductor layer. The first trench has a first width and a first depth. A second trench is formed in the semiconductor layer. The second trench has a second width and a second depth. The first width is wider than the second width. A buried dielectric layer is disposed between a bottom semiconductor surface of the semiconductor layer and a substrate. The buried dielectric layer contacts a first bottom surface of the first trench. A liner dielectric is formed on the first bottom surface and a first sidewall of the first trench. A first layer is formed on the liner dielectric. A second layer is formed on the first layer and extends to the substrate through an opening formed on the first bottom surface.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to single diffusion cut for gate structures and methods of manufacture. The structure includes a single diffusion break extending into a substrate between diffusion regions of adjacent gate structures, the single diffusion break filled with an insulator material and further comprising an undercut region lined with a liner material which is between the insulator material and the diffusion regions.

Abstract: A semiconductor on insulator type structure, which may be used for a front side type imager, successively comprises, from its rear side to its front side, a semiconductor support substrate, an electrically insulating layer and an active layer comprising a monocrystalline semiconductor material. The active layer is made of a semiconductor material having a state of mechanical stress with respect to the support substrate, and the support substrate comprises, on its rear side, a silicon oxide layer, the thickness of the oxide layer being chosen to compensate bow induced by the mechanical stress between the active layer and the support substrate during cooling of the structure after the formation by epitaxy of at least a part of the active layer on the support substrate.

Abstract: A method and structure for providing a semiconductor-on-insulator (SCOI) wafer having a buried low-K dielectric layer includes forming a device layer on a first semiconductor substrate. In various embodiments, at least a portion of the device layer is separated from the first semiconductor substrate, where the separating forms a cleaved surface on the separated portion of the device layer. In some examples, a patterned low-K dielectric layer is formed on a second semiconductor substrate. Thereafter, and in some embodiments, the separated portion of the device layer is bonded, along the cleaved surface, to the patterned low-K dielectric layer.

Abstract: A method of manufacturing a semiconductor device includes providing a wafer having a first surface, wherein the wafer includes a gate electrode having a top surface, and the top surface is leveled with the first surface; and forming an alignment structure on the top surface. The method further includes forming a photoresist on the alignment layer to cover a portion of the top surface; and removing portions of the alignment layer uncovered by the photoresist to form an alignment structure on the top surface. The method further includes forming a dielectric surrounding the alignment structure on the first surface and over the alignment structure, removing a portion of the dielectric to expose the alignment structure by CMP; removing the alignment structure to expose at least a portion of the top surface of the gate electrode, and forming a gate conductor over and in contact with the gate electrode.

Abstract: A method for forming an interconnection structure for a semiconductor device is provided.

Abstract: The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a first semiconductor structure, a first connecting structure, and a second semiconductor structure positioned on the first connecting structure. The first connecting structure includes a first connecting insulating layer positioned on the first semiconductor structure, two first conductive layers positioned in the first connecting insulating layer, and a first porous layer positioned between the two first conductive layers. The second semiconductor structure is positioned on the first connecting structure and includes two second conductive features positioned on the two first conductive layers. The first conductive layer has a first width, the second conductive feature has a second width greater than the first width, and the different width forms a step-shaped cross-sectional profile near an interface of the first conductive layer and the second conductive feature.

Abstract: A method of fabricating a semiconductor device includes: forming a trench on an insulating layer to expose a first conductive feature disposed under the insulating layer; forming a barrier layer over the insulating layer, a sidewall of the trench, and the first conductive feature; etching a bottom of the barrier layer to expose the first conductive feature; and forming a second conductive feature over an exposed portion of the first conductive feature.

Abstract: A method includes forming a metallic layer over a Metal-Oxide-Semiconductor (MOS) device, forming reverse memory posts over the metallic layer, and etching the metallic layer using the reverse memory posts as an etching mask. The remaining portions of the metallic layer include a gate contact plug and a source/drain contact plug. The reverse memory posts are then removed. After the gate contact plug and the source/drain contact plug are formed, an Inter-Level Dielectric (ILD) is formed to surround the gate contact plug and the source/drain contact plug.

Abstract: A structure and a formation method of a semiconductor device are provided. The semiconductor device structure includes a first epitaxial structure and a second epitaxial structure over a semiconductor substrate. The semiconductor device structure also includes a first conductive via electrically connected to the first epitaxial structure through a conductive contact. The first conductive via is misaligned with the first epitaxial structure. The semiconductor device structure further includes a second conductive via electrically connected to the second epitaxial structure. The second conductive via is aligned with the second epitaxial structure.

Abstract: The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a first semiconductor structure, a first connecting structure positioned on the first semiconductor structure, and a second semiconductor structure positioned on the first connecting structure. The first connecting structure includes a first connecting insulating layer positioned on the first semiconductor structure, a plurality of first connecting contacts positioned in the first connecting insulating layer, and a plurality of first supporting contacts positioned in the first connecting insulating layer. The top surfaces of the plurality of first connecting contacts contact a bottom surface of the second semiconductor structure. A top surface of the plurality of first connecting contact and a top surface of the plurality of first supporting contact protrude from a top surface of the first connecting insulating layer.

Abstract: A wafer processing method includes a polyolefin sheet providing step of positioning a wafer in an inside opening of a ring frame and providing a polyolefin sheet on a back side of the wafer and on a back side of the ring frame, a uniting step of heating the polyolefin sheet as applying a pressure to the polyolefin sheet to thereby unite the wafer and the ring frame through the polyolefin sheet by thermocompression bonding, a dividing step of cutting the wafer by using a cutting apparatus to thereby divide the wafer into individual device chips, and a pickup step of blowing out air to push up each device chip and picking up each device chip from the polyolefin sheet.

Abstract: Implementations of methods of singulating a plurality of die included in a substrate may include forming a groove through a backside metal layer through laser ablating a backside metal layer at a die street of a substrate and singulating a plurality of die included in the substrate through removing substrate material of the substrate in the die street.

Abstract: The present disclosure relates to a method for forming a multi-dimensional integrated chip structure. In some embodiments, the method may be performed by bonding a second substrate to an upper surface of a first substrate. A first edge trimming cut is performed along a first loop and extends into a first peripheral portion of the second substrate. A second edge trimming cut is performed along a second loop and extends into a second peripheral portion of the second substrate and into the first substrate. A third edge trimming cut is performed along a third loop and extends into a third peripheral portion of the first substrate.

Abstract: A method includes receiving, by a group messaging service, a message including recorded audio and a first group identifier, and determining that the group includes a bot. The method also includes determining whether the bot is a user bot responsive to a user node in the group or a group bot responsive to each of the one or more user nodes, selecting a bot voice library to process the recorded audio, sending, by the group messaging service, the recorded audio to the determined user bot or group bot, processing the recorded audio to produce enhanced text, performing, by the determined user bot or group bot, one or more designated actions corresponding to one of the recorded audio and the enhanced text, and sending, by the determined user bot or group bot, an audio reply to the group messaging service.

Abstract: The present disclosure relates generally to an epitaxy scheme for forming source/drain regions in a semiconductor device, such as an n-channel device. In an example, a method of manufacturing a semiconductor device is provided. The method generally includes forming a recess in a fin, the fin being on a substrate. The recess is proximate a gate structure over the fin. The method includes epitaxially growing a source/drain region in the recess using a remote plasma chemical vapor deposition (RPCVD) process. The RPCVD process includes using a silicon source precursor and a hydrogen carrier gas.

Abstract: Semiconductor devices and fabrication methods are provided. An exemplary fabrication method includes providing a semiconductor substrate; forming at least one gate structure having a gate dielectric layer on a surface of the semiconductor substrate; forming first sidewall spacers on a first sidewall surface region of the gate structure and covering sidewall surfaces of the gate dielectric layer; forming second sidewall spacers on a second sidewall surface region of the gate structure and top surfaces of the first sidewall spacers and made of a material different from a material of the first sidewall spacers; forming conductive plugs in the dielectric layer at both sides of the gate structure, the first sidewall spacers and the second sidewall spacers; and removing the second sidewall spacers to form air gap spacers above the first sidewall spacers and between the second sidewall surface region of the gate structure and the conductive plugs.

Abstract: A structure and formation method of a semiconductor device is provided. The method includes forming a first, a second, a third, and a fourth fin structures over a substrate. The method also includes forming a first spacer layer over sidewalls of the first and the second fin structures. The method further includes forming a second spacer layer over the first spacer layer and sidewalls of the third and the fourth fin structures. In addition, the method includes forming a first blocking fin between the first and the second fin structures. The first blocking fin is separated from the first fin structure by portions of the first spacer layer and the second spacer layer. The method includes forming a second blocking fin between the third and the fourth fin structures. The second blocking fin is separated from the third fin structure by a portion of the second spacer layer.

Abstract: A semiconductor device includes a substrate; an n-type transistor including a first junction region positioned on the substrate, a first channel region positioned on the first junction region, a second junction region positioned on the first channel region, and a first gate stack at least partially surrounding the first channel region; and a p-type transistor including a third junction region positioned on the substrate, a second channel region positioned on the third junction region, a fourth junction region positioned on the second channel region, and a second gate stack at least partially surrounding the second channel region, in which the first channel region and the second channel region are epitaxial channel layers.

Abstract: This spin current magnetization rotational element includes a first ferromagnetic metal layer for a magnetization direction to be changed, and a spin-orbit torque wiring extending in a second direction intersecting a first direction which is an orthogonal direction to a surface of the first ferromagnetic metal layer and configured to be joined to the first ferromagnetic metal layer, wherein the spin-orbit torque wiring has a structure in which a spin conduction layer joined to the first ferromagnetic metal layer and a spin generation layer joined to the spin conduction layer on a surface on a side opposite to the first ferromagnetic metal layer are laminated.

Abstract: A test circuit layout structure for a display panel is disclosed and includes a chip on film (COF) bonding region having two ends connected to two power conductor regions extending toward an active area; a test circuit region located between the COF bonding region and the two power conductor regions; two test pad regions and two electrostatic protection regions are both distributed around two sides of the COF bonding region; wherein a plurality of wires extend from the test pad regions and are configured to couple the electrostatic protection regions, the COF bonding region, and the test circuit region; wherein resistivity of the wires and resistivity of the power conductor regions are the same; and wherein the wires bypass the power conductor regions disposed in the same layer as the wires, alternatively, the wires and the power conductor regions are overlapped in an insulation manner.

Abstract: A device includes a die with perimeters associated therewith, a substrate, and a test channel. The die is coupled to the substrate via a plurality of C4 bumps on a first side of the substrate. The substrate has connections on a second side of the substrate, opposite to the first side. A first connection connects a C4 bump on the first side of the substrate to a connection on the second side using a metal layer. The test channel is positioned within the substrate and further positioned outside of the perimeter of the die coupled to the substrate. The test channel is positioned at substantially a same depth as the metal layer of the first connection. A probe connecting to the test channel via pads positioned on a same side of the substrate that provides electrical characteristics that is substantially the same as electrical characteristics of the first connection.

Abstract: An embodiment method includes encapsulating a semiconductor die in an encapsulant, planarizing the encapsulant, and depositing a polymer material on the encapsulant. The method further includes planarizing the polymer material and forming a metallization pattern on the polymer material. The metallization pattern electrically connects a die connector of the semiconductor die to a conductive feature disposed outside of the semiconductor die.

Abstract: A semiconductor device includes a substrate, an IC die mounted on the substrate, packaging encapsulant on the substrate, a cavity in the packaging encapsulant, a conductive lid attached to the packaging encapsulant over the IC die, an electrical ground path in the substrate, and a first conductive structure in the cavity. The first conductive structure includes a first end electrically coupled to the conductive lid and a second end electrically coupled to the electrical ground path.

Abstract: A fan-out semiconductor package includes a semiconductor chip, an encapsulant covering the semiconductor chip, a connection structure disposed below the semiconductor chip, and first and second metal pattern layers disposed on different levels on the semiconductor chip, wherein the first metal pattern layer is provided to electrically connect to an electrical connection member such as a frame, provided for electrical connection of the package in a vertical direction by a path via the second metal pattern layer.

Abstract: In one example, a semiconductor device, comprising a substrate having a top side and a bottom side, an electronic device on the top side of the substrate, a first encapsulant on the top side of the substrate contacting a side of the electronic device, a second encapsulant on the bottom side of the substrate, wherein the second encapsulant includes an undercut at an end of the second encapsulant, and a cover layer comprising a top cover on a top side of the first encapsulant and a side cover on a side of the first encapsulant and a side of the substrate, wherein the side cover extends adjacent to the undercut. Other examples and related methods are also disclosed herein.

Abstract: The present disclosure relates to a thermally enhanced package, which includes a carrier, a thinned die over the carrier, a mold compound, and a heat extractor. The thinned die includes a device layer over the carrier and a dielectric layer over the device layer. The mold compound resides over the carrier, surrounds the thinned die, and extends beyond a top surface of the thinned die to define an opening within the mold compound and over the thinned die. The top surface of the thinned die is at a bottom of the opening. At least a portion of the heat extractor is inserted into the opening and in thermal contact with the thinned die. Herein the heat extractor is formed of a metal or an alloy.

Abstract: An electronic apparatus includes a first board, a second board, a housing, and a first thermal conductive assembly. The housing accommodates the first board and the second board. The first thermal conductive assembly connects a face of the first board, the face of the first board fronting a region between the first board and the second board, to a first face of the housing or a second face of the housing. The first face is opposed to the first board, the second face is opposed to the second board.

Abstract: The present disclosure provides a semiconductor device package. The semiconductor device package includes a first die, a second die, and a thermal dissipation element. The first die has a first surface. The second die is disposed on the first surface. The thermal dissipation element is disposed on the first surface. The thermal dissipation element includes a first portion extending in a first direction substantially parallel to the first surface and partially covered by the second die and a second portion extending in a second direction substantially perpendicular to the first surface to be adjacent to an edge of the second die.

Abstract: In one general aspect, a package can include a first submodule including a first semiconductor die coupled to a first substrate and a first spacer, and disposed between the first spacer and the first substrate. The first submodule includes a second spacer disposed lateral to the first semiconductor die. The package includes a second submodule including a second semiconductor die coupled to a second substrate and a third spacer, and disposed between the third spacer and the second substrate. The second submodule includes a fourth spacer disposed lateral to the second semiconductor die. The package includes an inter-module layer disposed between the first submodule and the second submodule. The first spacer of the first submodule is electrically coupled to the fourth spacer of the second-submodule via the inter-module layer. The second spacer of the first submodule is electrically coupled to the third spacer of the second-submodule via the inter-module layer.

Abstract: A Monolithic Microwave Integrated Circuit (MMIC) structure having a thermally conductive substrate; a semiconductor layer disposed on a first portion of an upper surface of the substrate; an active mesa-shaped semiconductor device layer disposed on the semiconductor layer; and a passive electrical device disposed directly on a second portion of the upper surface of the substrate.

Abstract: A latch assembly for latching a heat sink onto a printed circuit board (PCB). The latch assembly includes a clamp having a connector for connecting the latch assembly to the heat sink. A spring is mounted to the clamp for biasing the clamp away from the heat sink. A handle is rotatably connected to the clamp, and a cam extends from the handle. A hook is moveably mounted to the clamp and has a cam surface engaged with the cam. The hook has an engagement portion for engaging the PCB. Rotation of the handle causes (i) rotation of the hook, which causes the engagement portion to engage the PCB, followed by (ii) movement of the cam along the cam surface, which causes translation of the clamp toward the PCB against the bias of the spring, which causes the heat sink to contact an IC for dissipating heat from the IC.

Abstract: A semiconductor device including: a substrate; a via which penetrates the substrate; a via insulating film formed along an inner wall of the via; and a core plug which fills the via, wherein a residual stress of the via insulating film is 60 MPa to ?100 MPa.

Abstract: An alternating stack of insulating layers and spacer material layers is formed over a substrate. At least one dielectric material portion is formed over the substrate adjacent to the alternating stack. Memory stack structures are formed through the alternating stack. A trench extending through the alternating stack and a via cavity extending through the at least one dielectric material portion are formed using a same anisotropic etch process. The via cavity is deeper than the trench and the via cavity extends into an upper portion of the substrate. The sacrificial material layers are replaced with electrically conductive layers using the trench as a conduit for an etchant and a reactant. A trench fill structure is formed in the trench, and a via structure assembly is formed in the via cavity using simultaneous deposition of material portions. A bonding pad may be formed on the bottom surface of the via structure assembly.

Abstract: A semiconductor device comprises a semiconductor body and an electrically conductive via which extends through at least a part of the semiconductor body, where the via has a lateral size which is given in a first lateral direction that is perpendicular to a vertical direction given by the main axis of extension of the via and where the via has a top side and a bottom side that faces away from the top side. The semiconductor device further comprises an electrically conductive etch-stop layer arranged at the bottom side of the via in a plane which is parallel to the first lateral direction, and at least one electrically conductive contact layer at the bottom side of the via in a plane which is parallel to the first lateral direction. The lateral extent in the first lateral direction of the etch-stop layer is larger than the lateral size of the via and the lateral extent in the first lateral direction of the contact layer is smaller than the lateral size of the via.

Abstract: A thin stacked semiconductor device has a plurality of circuits that are laminated and formed sequentially in a specified pattern to form a multilayer wiring part. At the stage for forming the multilayer wiring part, a filling electrode is formed on the semiconductor substrate such that the surface is covered with an insulating film, a post electrode is formed on specified wiring at the multilayer wiring part, a first insulating layer is formed on one surface of the semiconductor substrate, the surface of the first insulating layer is removed by a specified thickness to expose the post electrode, and the other surface of the semiconductor substrate is ground to expose the filling electrode and to form a through-type electrode. A second insulating layer is formed on one surface of the semiconductor substrate while exposing the forward end of the through-type electrode, and bump electrodes are formed on both electrodes.

Abstract: Provided is a method of manufacturing a semiconductor package, the method including a first step for forming a primary solder ball on an under bump metallurgy (UBM) structure, and a second step for forming a secondary solder ball on an upper surface of the UBM structure by performing a reflow process on the primary solder ball while a side wall of the UBM structure is exposed.

Abstract: The invention discloses a parallel electrode combination, which includes a first power module electrode and a second power module electrode, wherein a soldering portion of the first power module electrode and a soldering portion of the second power module electrode are respectively used to connect a copper layer of a power source inside a power module, and a connecting portion of the first power module electrode and a connecting portion of the second power module electrode are opposite in parallel. The invention further discloses a power module and a power module group using the parallel electrode combination. In the invention, the connecting portion of the first power module electrode and the connecting portion of the second power module electrode are opposite in parallel.

Abstract: Methods are disclosed for forming flat no-leads packages (e.g., QFN packages) with soldering surfaces that are fully coated, e.g., by a tin immersion process, for improved solder connections of the packages to a PCB or other structure. The method includes forming a flat no-leads package structure including a leadframe terminal structure having an exposed top or bottom surface; forming a first coating of a first coating material (e.g., tin) on the exposed top or bottom surface; cutting through a full thickness of the leadframe terminal structure to define an exposed terminal sidewall surface; and forming a second coating of a second coating material (e.g., tin) over the full height of the exposed terminal sidewall surface. The coating (e.g., tin immersion coating) covering the full height of the leadframe terminal sidewall may enhance the flow of solder material, e.g., when soldering to a PCB, to provide an improved solder connection.

Abstract: Semiconductor chip package device and semiconductor chip package method are provided. The semiconductor chip package device includes: a lead frame, chips, an encapsulating layer, and an electroplating layer. The lead frame includes a first surface, a second surface, first grooves, second grooves, and third grooves. The first grooves are connected to the second grooves to form through holes and the third grooves disposed at ends of the lead frame. The chips are electrically connected to the lead frame. The encapsulating layer is formed by using an encapsulating material to encapsulate the chips and at least a portion of the lead frame. The first grooves are filled with the encapsulating material. The electroplating layer is disposed on the second surface of the lead frame, and extends into the third grooves or into the third grooves and the second grooves.

Abstract: The disclosure provides a semiconductor device. The device includes first and second substrates, first mounting layers, second mounting layers, power supply terminals, an output terminal, electroconductive coupling members and switching elements. The first substrate has first obverse and reverse surfaces facing in a thickness direction. The second substrate has a second obverse surface facing as the first obverse surface faces in the thickness direction and a second reverse surface facing away from the second obverse surface. The second substrate is spaced from the first substrate in a first direction crossing the thickness direction. The first mounting layers are electrically conductive and disposed on the first obverse surface. The second mounting layers are electrically conductive and disposed on the second obverse surface. The power supply terminals are electrically connected to the first mounting layers. The output terminal is connected to one of the second mounting layers.

Abstract: Provided is a semiconductor package having an exposed heat sink for high thermal conductivity. The semiconductor package includes at least one semiconductor chip 110, the lead frame 120, a signal line 130, the sealing member 140, and at least one heat sink 150, wherein the lead frame 120 has a first surface, to which the semiconductor chips 110 are attached, and a second surface facing the first surface, the signal line 130 electrically connects the semiconductor chips 110 and the semiconductor chip 110 to the lead frame 120 by wire bonding or clip bonding, the sealing member 140 surrounds areas where the semiconductor chips 110 are attached, except for an external connection terminal 121 of the lead frame 120, and exposes the second surface of the lead frame 120, and the at least one heat sink 150 are attached to the second surface of the exposed lead frame 120.

Abstract: A circuit board includes a composite layer of a non-conductor inorganic material and an organic material, a plurality of conductive structures, a first built-up structure, and a second built-up structure. The composite layer of the non-conductor inorganic material and the organic material has a first surface and a second surface opposite to each other and a plurality of openings. The conductive structures are respectively disposed in the openings of the composite layer of the non-conductor inorganic material and the organic material. The first built-up structure is disposed on the first surface of the composite layer of the non-conductor inorganic material and the organic material and electrically connected to the conductive structures. The second built-up structure is disposed on the second surface of the composite layer of the non-conductor inorganic material and the organic material and electrically connected to the conductive structures.

Abstract: A module assembly includes an adapter substrate with at least one cavity and a surface mounted die mounted on a top surface of the adapter substrate. The first cavity extends through the adapter substrate and has at least one first side wall. A first metallization layer is provided within the cavity. A first recessed die is attached to the first metallization layer and mounted within the cavity such that the first recessed die is at least partially recessed into the first cavity and surrounded by a gap filler that resides between side portions of the first recessed die and the at least one first side wall. The top surface of the gap filler is flush with the top surface of the adapter substrate and a top surface of the first recessed die.