Abstract: A substrate fixing device includes a base plate having a first through-hole penetrating through the base plate in a thickness direction of the base plate, a ceramic plate adhering to the base plate, having an electrode embedded in the ceramic plate and a second through-hole formed to communicate with the first through-hole, and configured to adsorb an adsorption target object by an electrostatic force that is generated when a voltage is applied to the electrode, an insulating plug arranged at a connection portion in the first through-hole connecting to the second through-hole, and a sealing member attached to the insulating plug and configured to seal a periphery of the connection portion.

Abstract: A member for a semiconductor manufacturing apparatus, includes: a base substrate that has a wafer-placement-table support and a focus-ring-placement-table support; a focus-ring placement table that is joined to the focus-ring-placement-table support; a wafer placement table that is separate from the focus-ring placement table, that overlaps an inner peripheral portion of the focus-ring placement table in plan view, and that is joined to the inner peripheral portion of the focus-ring placement table and to the wafer-placement-table support; an internal space that is surrounded by a lower surface of the wafer placement table, an outer peripheral surface of the wafer-placement-table support, an inner peripheral surface of the focus-ring placement table, and an upper surface of the focus-ring-placement-table support; and a communication path that is provided at the base substrate and that causes the internal space and an outside of the base substrate to communicate with each other.

Abstract: A method for processing a subject with plasma includes repeatedly outputting first pulses from a pulse generator to a first high-frequency power supply, intermittently outputting first high-frequency power from the first high-frequency power supply to a first electrode based on the first pulses to generate the plasma, detecting start of plasma generation caused by a present first pulse with a detector, calculating a delay period, being from rise of the present first pulse until the detector detects start of plasma generation, repeatedly outputting second pulses from the pulse generator to a second high-frequency power supply based on time at which the delay period has elapsed from rise of a first pulse output after the delay period is calculated, and outputting second high-frequency power from the second high-frequency power supply to a second electrode based on the second pulses to draw ions from the plasma to the subject.

Abstract: An apparatus for detecting a substance comprising a direct analysis in real time apparatus; a neutral excluder; a mass spectrometer; and a vessel in. The apparatus may also comprise a separator, a gas, an alcohol, a filter, and a pump. The apparatus may also comprise electrodes in communication with the direct analysis in real time apparatus and the neutral excluder. A method for detecting a substance comprising contacting the substance with a direct analysis in real time apparatus ion stream; forming an ion and a neutral particle; flowing the ion and the neutral particle into a neutral excluder; contacting the ion and the neutral particle with a gas; and flowing the ion into a mass spectrometer.

Abstract: A sample support is a sample support for ionizing a sample. The sample support includes a substrate that includes a first surface having electrical insulating property, a second surface opposite to the first surface, and an irregular porous structure that opens to at least the first surface.

Abstract: An analysis system includes a degassing cell, at least one first valve, and at least one second valve. The at least one first valve is fluidly coupled with a top of the degassing cell, the at least one first valve configured selectably connect the degassing cell to a displacement gas flow and to a vacuum source. The at least one second valve is fluidly connected with a lateral side of the degassing cell and separately fluidly connected with a bottom of the degassing cell. The at least one second valve is selectably coupled with any of a source of a sample-carrying fluid, a transfer line configured to deliver a sample to an analysis device, or a waste output.

Abstract: A system and method are provided for loading a sample into an analytical instrument using acoustic droplet ejection (“ADE”) in combination with a continuous flow sampling probe. An acoustic droplet ejector is used to eject small droplets of a fluid sample containing an analyte into the sampling tip of a continuous flow sampling probe, where the acoustically ejected droplet combines with a continuous, circulating flow stream of solvent within the flow probe. Fluid circulation within the probe transports the sample through a sample transport capillary to an outlet that directs the analyte away from the probe to an analytical instrument, e.g., a device that detects the presence, concentration quantity, and/or identity of the analyte. When the analytical instrument is a mass spectrometer or other type of device requiring the analyte to be in ionized form, the exiting droplets pass through an ionization region, e.g.

Abstract: In one aspect, a method for performing mass spectrometry is disclosed, which comprises using a Fourier transform mass analyzer, which extends from an inlet port to an outlet port, to acquire a first mass spectrum of a first plurality of ions generated by ionizing a sample, where the first plurality of ions are radially confined within the mass analyzer under a first radial confinement condition. The method further includes using the Fourier transform mass analyzer to acquire a second mass spectrum of a second plurality of ions generated by ionizing the sample, where the second plurality of ions are radially confined within said mass analyzer using a second radial confinement condition, and comparing said first and second mass spectra to identify spurious mass signals.

Abstract: Systems, methods, and computer-readable media described provide multi-reflection time-of-flight analyser (e.g. of a type in which the ion beam is allowed to spread out relatively broadly) and methods for use in a zoom mode, in which time-of-flight perturbations induced by reflections at the deflector are cancelled out or removed, such that they do not give rise to a significant increase in the arrival time spread of ions at the detector. This accordingly facilitates high resolution operation of the analyser in the zoom mode. Furthermore, this is done in a way which allows the analyser to remain drift focussed, which in turn means that the analyser can be straightforwardly and seamlessly switched between its normal mode of operation and the zoom mode of operation.

Abstract: In one aspect, a method of performing Fourier Transform (FT) mass spectrometry is disclosed, which comprises passing a plurality of ions through an FT mass analyzer comprising a plurality of rods arranged in a multipole configuration, where the plurality of rods include an input port for receiving ions and an output port through which ions can exit the mass analyzer. The method can further include applying at least one RF voltage to at least one of the rods so as to generate an RF field for radial confinement of the ions as they pass through the mass analyzer, and applying a resonant burst of an AC signal to at least one of said rods so as to remove ions having selected m/z ratios, e.g., m/z ratios within a desired range, from the ions introduced into the FT mass analyzer.

Abstract: A substrate processing method is provided. The substrate processing method includes: (S7) supplying a water repellent agent (SMT) to a substrate (W); (S11) supplying dilute isopropyl alcohol (dIPA) to the substrate (W) after the supplying a water repellent agent (SMT), the dilute isopropyl alcohol (dIPA) being obtained by diluting isopropyl alcohol; and (S12) drying the substrate (W) after the supplying dilute isopropyl alcohol (dIPA).

Abstract: A substrate processing method includes removing a dissolved gas in a processing liquid; forming a liquid film of the processing liquid covering a surface of a substrate, by supplying, onto the surface of the substrate, the processing liquid from which the dissolved gas is removed; carrying the substrate having the liquid film formed thereon into a processing vessel; and drying the surface of the substrate by flowing a processing fluid into the processing vessel while maintaining an internal pressure of the processing vessel, in which the substrate having the liquid film formed thereon is accommodated, at a pressure allowing the processing fluid to be maintained in a supercritical state, to replace the processing liquid covering the surface of the substrate with the processing fluid, and, then, by vaporizing the processing fluid.

Abstract: A method for producing, on a structure based on a material III-V, of a dielectric layer, the method comprising producing a first dielectric film by ALD by carrying out a plurality of first cycles, each comprising at least: one injection in the reaction chamber of a precursor based on a first material and one injection in the reaction chamber of a water or ozone-based precursor; and producing, on the first dielectric film, a second dielectric film by plasma-enhanced ALD by carrying out a plurality of second cycles, each comprising at least: one injection in the reaction chamber of a precursor based on a second material and one injection in the reaction chamber of an oxygen or nitrogen based precursor.

Abstract: The present application provides a method for improving continuity of a work function thin film, forming a tunneling oxide layer on a substrate; forming an isolation layer on the tunneling oxide layer; forming a work function thin film on the isolation layer, the work function thin film serves as a floating gate in a semi-floating gate device to store charges and conduction electrons, performing a heat treatment on the tunneling oxide layer, the isolation layer and the work function layer, the isolation layer reacts with a surface of the tunneling oxide layer to form a dense barrier layer, the isolation layer reacts with O in the tunneling oxide layer to form a new tunneling oxide layer, the heat treatment lasts until the isolation layer is fully consumed, and the work function thin film remaining after the reaction uniformly covers an upper surface of the dense barrier layer.

Abstract: A provided is a polycrystalline diamond substrate that can reduce the cost for inhibiting warpage. The polycrystalline diamond substrate is a polycrystalline diamond substrate having a first principal surface and a second principal surface, and includes, between the first principal surface and the second principal surface, a surface having an average grain diameter smaller than each of average grain diameters of the first principal surface and the second principal surface.

Abstract: A method for producing doped, van der Waals ferromagnetic materials is disclosed. Such materials can take the form of monolayer iron-doped transition metal dichalcogenides. Such materials are useful for the manufacture of semiconductors, as high curie temperatures are achieved (i.e., those exceeding room temperature), which allows for the preservation of useful ferromagnetic and semiconducting properties across a wider range of conditions.

Abstract: Implantation mask formation techniques described herein include increasing an initial aspect ratio of a pattern in an implantation mask by non-lithography techniques, which may include forming a resist hardening layer on the implantation mask. The pattern may be formed by photolithography techniques to the initial aspect ratio that reduces or minimizes the likelihood of pattern collapse during formation of the pattern. Then, the resist hardening layer is formed on the implantation mask to increase the height of the pattern and reduce the width of the pattern, which increases the aspect ratio between the height of the openings or trenches and the width of the openings or trenches of the pattern. In this way, the pattern in the implantation mask may be formed to an ultra-high aspect ratio in a manner that reduces or minimizes the likelihood of pattern collapse during formation of the pattern.

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a gate dielectric layer over a substrate. The method includes forming a work function metal layer over the gate dielectric layer. The method includes forming a glue layer over the work function metal layer. The glue layer is thinner than the gate dielectric layer. The method includes forming a gate electrode over the glue layer. The gate electrode includes fluorine. The method includes annealing the gate electrode. The fluorine diffuses from the gate electrode into the gate dielectric layer.

Abstract: Methods and apparatuses for forming low resistivity tungsten using tungsten nitride barrier layers are provided herein. Methods involve depositing extremely thin tungsten nitride barrier layers prior to depositing tungsten nucleation and bulk tungsten layers. Methods are applicable for fabricating tungsten word lines in 3D NAND fabrication as well as for fabricating tungsten-containing components of DRAM and logic fabrication. Apparatus included processing stations with multiple charge volumes to pressurize gases in close vicinity to a showerhead of a processing chamber for processing semiconductor substrates.

Abstract: The present disclosure relates to the technical field of semiconductors, and provides a manufacturing method of a semiconductor structure and a semiconductor structure. The manufacturing method of a semiconductor structure includes: providing a base; forming, on a base, a barrier layer with a target thickness; performing first heat treatment on the barrier layer, a temperature of the first heat treatment being 85-100° C.; exposing the barrier layer, and performing second heat treatment on the barrier layer, a temperature of the second heat treatment being 85-100° C.; performing development on the barrier layer to form a through via region in the barrier layer; and etching the base according to the through via region to form a through via.

Abstract: The present disclosure provides a method for manufacturing a semiconductor. The method includes: forming a metal oxide layer over a gate structure over a substrate; forming a dielectric layer over the metal oxide layer; forming a metal layer over the metal oxide layer; and performing a chemical mechanical polish (CMP) operation to remove a portion of the dielectric layer and a portion of the metal layer, the CMP operation stopping at the metal oxide layer, wherein a slurry used in the CMP operation includes a ceria compound. The present disclosure also provides a method for planarizing a metal-dielectric surface.

Abstract: A method for forming a semiconductor structure is provided. The method includes providing a semiconductor substrate with a plurality of floating gates on it, and an isolation structure between the floating gates. The method includes performing a first etching process to recess the isolation structure and to form an opening between the floating gates to expose a portion of the sidewalls of the floating gates. The method includes conformally forming a liner in the opening. The method includes performing an ion implantation process to implant a dopant into the isolation structure below the liner. The method includes performing a second etching process to remove the liner and a portion of the isolation structure below the liner, thereby giving the bottom portion of the opening a tapered profile.

Abstract: An etching method including an etching step of bringing, in the presence of plasma, an etching gas containing a fluorine compound with three or fewer carbon atoms having at least one bond of a carbon-oxygen double bond and an ether bond in a molecule into contact with a target etching member having an etching target and a non-etching target, and selectively etching the etching target in comparison with the non-etching target. A concentration of the fluorine compound in the etching gas is 0.5 vol% or more to 40 vol% or less, and the etching target has silicon nitride.

Abstract: An etching method according to the present invention includes a step of creating a reduced pressure state inside of a processing chamber accommodating a substrate, after the step of creating the reduced pressure state, a step of supplying vapor into the processing chamber, after the step of creating the reduced pressure state, a step of supplying an etching gas containing hydrogen fluoride into the processing chamber and etching the coating film formed on the substrate, and in the step of supplying the vapor, a step of detecting OH stretching vibration in the substrate by infrared spectroscopy, in which the step of etching the coating film is performed when the OH stretching vibration of a predetermined threshold value or higher is detected in the substrate. Therefore, the efficiency of the etching process is enhanced.

Abstract: A retaining ring comprises a generally annular body. The body comprises a top surface, a bottom surface, an outer surface connected to the top surface at an outer top perimeter and the bottom surface at an outer bottom perimeter, and an inner surface connected to the top surface at an inner top perimeter and the bottom surface at an inner bottom perimeter. The inner surface comprises seven or more planar facets. Adjacent planar facets are connected at corners. The inner bottom perimeter comprises straight edges of the planar facets connected at the corners.

Abstract: Embodiments disclosed herein include methods of developing a metal oxo photoresist. In an embodiment, the method comprises providing a substrate with the metal oxo photoresist into a vacuum chamber, where the metal oxo photoresist comprises exposed regions and unexposed regions. In an embodiment, the unexposed regions comprise a higher carbon concentration than the exposed regions. The method may further comprise vaporizing a halogenating agent into the vacuum chamber, where the halogenating agent reacts with either the unexposed regions or the exposed regions to produce a volatile byproduct. In an embodiment, the method may further comprise purging the vacuum chamber.

Abstract: Exemplary methods of etching may include flowing a fluorine-containing precursor and a secondary gas into a processing region of a semiconductor processing chamber. The secondary gas may be or include oxygen or nitrogen. A flow rate ratio of the fluorine-containing precursor to the secondary gas may be greater than or about 1:1. The methods may include contacting a substrate with the fluorine-containing precursor and the secondary gas. The substrate may include an exposed metal. The substrate may define a high aspect-ratio structure. The methods may include etching the exposed metal within the high aspect-ratio structure.

Abstract: A semiconductor manufacturing apparatus is a semiconductor manufacturing apparatus for holding a polishing object on a polishing head and polishing a surface of the polishing object. The semiconductor manufacturing apparatus includes a plurality of laser irradiation parts on the polishing head. At least one of the laser irradiation parts is a laser irradiation part configured to radiate a laser beam toward the back surface side of the polishing object.

Abstract: A method of manufacturing an interposer product that includes: forming on a same side of an interposer substrate, by a common process, first and second portions of a gold layer, wherein the first portion of the gold layer constitutes a wire-bonding pad; depositing a Au—Sn solder on the second portion of the gold layer, the Au—Sn solder comprising a gold-tin alloy having a first composition; merging the deposited Au—Sn solder with the second portion of the gold layer by performing a reflow process to form at least one bonding bump, wherein a majority of the bonding bump is made of a eutectic composition of the gold-tin alloy, and wherein the first composition has a smaller proportion of gold than is in the eutectic composition of the gold-tin alloy; and planarizing the bonding bump to form a flat bonding bump having a selected height.

Abstract: A package structure and the manufacturing method thereof are provided. The package structure includes a semiconductor die, conductive through vias, an insulating encapsulant, and a redistribution structure. The conductive through vias are electrically coupled to the semiconductor die. The insulating encapsulant laterally encapsulates the semiconductor die and the conductive through vias, wherein the insulating encapsulant has a recess ring surrounding the semiconductor die, the conductive through vias are located under the recess ring, and a vertical projection of each of the conductive through vias overlaps with a vertical projection of the recess ring. The redistribution structure is electrically connected to the semiconductor die and the conductive through vias.

Abstract: There is provided a method of manufacturing package devices, including a first substrate preparing step of preparing a first substrate in which a device chip is mounted in each of a plurality of mounting areas, a second substrate preparing step of preparing a second substrate including a plurality of recessed portions that are capable of housing the device chips, a bonding step of bonding the first substrate and the second substrate together in such a manner that the device chips are housed in the recessed portions, a grinding step of grinding the second substrate until the recessed portions are exposed, a resin molding step of supplying resin to the plurality of recessed portions and covering the device chips by the resin, and a dividing step of dividing the first substrate and the second substrate and manufacturing a plurality of package devices each including the device chips.

Abstract: A method for removing particulates from a plurality of substrates includes opening a first access port in a top of a first container holding a cleaning fluid bath, inserting a first substrate through the first access port to a first support, closing the first access port, opening a second access port in the top of the first container, inserting a second substrate through the second access port to a second support, closing the second access port, opening the first access port, removing the first substrate through the first access port and delivering the first substrate into a rinsing station, closing the first access port, opening the second access port, removing the second substrate through the second access port and delivering the second substrate into the rinsing station, and closing the second access port.

Abstract: An etching method according to the present invention includes after a step of creating a reduced pressure state, a step of supplying an etching gas containing hydrogen fluoride into a processing chamber and etching a coating film formed on a substrate, after the step of etching the coating film, a step of cleaning the substrate by supplying vapor into the processing chamber, and in the step of cleaning the substrate, a step of detecting Si—F stretching vibration in the substrate by infrared spectroscopy, in which the step of cleaning the substrate ends when the Si—F stretching vibration equal to or lower than a predetermined first threshold value is detected. Therefore, the time required for cleaning the substrate is prevented from being unnecessarily long.

Abstract: A flash lamp emits a flash of light to a front surface of a semiconductor wafer held in a chamber to heat the semiconductor wafer. A GCT thyristor is connected in parallel with the flash lamp. After a lapse of a predetermined time period since a current starts to flow through the flash lamp, the GCT thyristor enters an ON state. This allows a discharge current to flow through the GCT thyristor with a smaller impedance, and prevents any current from flowing through the flash lamp. Consequently, a tail current flowing through the flash lamp can be suppressed. Furthermore, reduction in a voltage charged into a capacitor can prevent the life of the flash lamp from being shortened.

Abstract: Lid separators for vacuum processing chamber lid separation and vacuum processing chambers incorporating same are provided herein. In some embodiments, a lid separator for a vacuum processing chamber includes: a shaft having a first end and an opposing second end, wherein the shaft is threaded along at least a first portion of the shaft; and a contact pad having an outer diameter greater than an outer diameter of the shaft, a recess disposed in a first side of the contact pad, and a central opening disposed through a second side of the contact pad, opposite the first side, and into the recess, wherein the shaft is coupled to the contact pad, wherein the first end of the shaft extends through the central opening and into the recess without reaching the first side of the contact pad, and wherein the first portion and the second end of the shaft extend away from the second side of the contact pad.

Abstract: There is an apparatus for transferring a member to be disposed in a substrate processing chamber between a substrate transfer chamber and the substrate processing chamber adjacent to each other, comprising: a valve body that is attached to and detached from an opening through which the substrate transfer chamber and the substrate processing chamber communicate and is configured to close the opening; a member holding part extending from the valve body into the substrate processing chamber when the opening is closed by the valve body, and configured to transfer the member to a preset arrangement position in the substrate processing chamber; and a moving mechanism configured to move the valve body separated from the opening in the substrate transfer chamber.

Abstract: Methods for making thin-films on semiconductor substrates, which may be patterned using EUV, include: depositing the organometallic polymer-like material onto the surface of the semiconductor substrate, exposing the surface to EUV to form a pattern, and developing the pattern for later transfer to underlying layers. The depositing operations may be performed by chemical vapor deposition (CVD), atomic layer deposition (ALD), and ALD with a CVD component, such as a discontinuous, ALD-like process in which metal precursors and counter-reactants are separated in either time or space.

Abstract: A system for evaluating a heat sensitive structure of an integrated circuit design including a memory for retrieving and storing integrated circuit design layout data, thermal data, process data, and one or more operational parameters, a processor capable of accessing the memory and identifying a target region having a nominal temperature Tnom, first and second heat generating structures within a first impact range of the target region, calculating the temperature increases ?Th1 and ?Th2 in the target region as a result of thermal coupling between the target region and the first and second heat generating structures, and conducting one or more parametric evaluations of the target region at an adjusted evaluation temperature TE=Tnom+?Th1+?Th1 after which a network interface transmits the result(s) of the parametric evaluation(s) for use in a design review.

Abstract: A computer-readable recording medium having stored thereon computer-executable instructions that, in response to execution on a computer, cause a processing to be performed is provided. The processing includes acquiring displacement data of multiple points on a surface of a substrate held by a chuck; specifying a distribution of displacements of the surface based on the acquired displacement data; and determining a type of a foreign matter based on the specified distribution.

Abstract: A container for consumables includes multiple holding portions, a partition plate and a fixer. The multiple holding portions are configured to respectively accommodate the consumables, each of which is loaded into and unloaded from one direction. The partition plate includes a first portion formed to be disposed between a light emitting part and a light receiving part of a detector, and the partition plate is accommodated in one of the multiple holding portions. The fixer is configured to fix the container so that the consumables are arranged on a transfer path to be loaded into and unloaded from the multiple holding portions.

Abstract: The present disclosure relates to a tray assembly. The tray assembly may include a die transport tray. The die transport tray may include an inner bottom surface for accommodating a plurality of dies. The tray assembly may further include a lid. The lid may include an inner top surface, wherein the inner top surface of the lid may face the inner bottom surface of the die transport tray when the lid is assembled over the die transport tray. The lid may further include a shock absorbing material on the inner top surface for contacting the plurality of dies, if present.

Abstract: The present disclosure is directed to an electrostatic charge measurement tool and dedicated system having a probe configured to scan the surface of a target, and methods for taking the electrostatic charge measurements. In an aspect, the probe is a non-contact electrostatic probe that may be moveable across the surface of the target and be adjustable in its height from the surface of the target. In another aspect, the target is an electrostatic chuck or semiconductor wafer. In a further aspect, the electrostatic charge measurement system may perform insitu measurement of targets without removing them from their working environment.

Abstract: According to embodiments of the present disclosure a micro-device comprises a frame and a component separated from the frame by a gap except where the component is connected to the frame with cantilever supports extending from the component to the frame. The internal frame contour of the frame can be non-rectangular. The external contour of the frame can be rectangular. The frame can follow the external contour of the component and cantilever supports except where the cantilever supports are connected to the frame. The internal or external contour of the frame can comprise slits extending into the frame. The gap separating the frame from the component can have a uniform width except where the cantilever supports are connected to the frame. In some embodiments, a micro-device is disposed on a target substrate comprising a cavity and the component is suspended over the cavity.

Abstract: A method for accurately positioning a component on a receiver substrate is provided, wherein the component is transferred from a donor substrate to a receiver substrate facing the donor substrate. The method comprises creating at least one nozzle at a predefined location in the area of contact between a blister forming layer on the donor substrate, and a component attached to the donor substrate by adhesion to the blister forming layer. The blister forming layer comprises at least a dynamic release layer, consisting of a dynamic release material, i.e. material that is vaporised when a laser beam of a given wavelength and flux density is directed to the donor substrate at the location of the component, from the back side of the donor substrate. The application of the laser beam thus creates a blister that contains vaporized dynamic release material.

Abstract: A base plate configured to be attached to a semiconductor substrate, wherein the base plate is configured to remain attached to the semiconductor substrate during a sequence of processing steps performed on the semiconductor substrate, and the base plate is made from a material having a Young's modulus larger than 300 GPa.

Abstract: A semiconductor manufacturing apparatus includes: a carrier jig including a mounting section having an adsorption hole for adsorbing a substrate to be mounted and a frame section for holding a peripheral edge of the substrate; and a stage including a mounting section having a suction port communicating with the adsorption hole of the carrier jig to adsorb the substrate and a heating device for heating the substrate.

Abstract: The present teachings disclose various embodiments of a printing system for printing substrate, in which the printing system can be housed in a gas enclosure, where the environment within the enclosure can be maintained as a controlled printing environment. A controlled environment of the present teachings can include control of the type of gas environment within the gas enclosure, the size and level particulate matter within the enclosure, control of the temperature within the enclosure and control of lighting. Various embodiments of a printing system of the present teachings can include a Y-axis motion system and a Z-axis moving plate that are configured to substantially decrease excess thermal load within the enclosure by, for example, eliminating or substantially minimizing the use of conventional electric motors.

Abstract: A pin lifting device (1) for lowering a substrate (2) onto a substrate carrier (15) and for lifting the substrate (2) off the substrate carrier (15) in a process chamber, in particular a vacuum process chamber. The pin lifting device (1) includes at least one lifting pin holder (4) and at least one lifting drive (5) for moving the lifting pin holder (4), which has a lifting pin (6) mounted thereon, in a reciprocating manner along a linear lifting motion path (7). The lifting pin holder (4) is mounted on the lifting drive (5) by a compensation bearing (8), and the compensation bearing (8) facilitates a relative movement between the lifting drive (5) and the lifting pin holder (4) in at least one direction (9) orthogonal to the linear lifting motion path (7).

Abstract: A semiconductor manufacturing apparatus includes a process container. A holder is disposed in the process container, and is arranged to hold a substrate including a first surface and a second surface on an opposite side to the first surface. The holder includes a mask portion that covers a first area of the first surface and exposes a second area different from the first area. The mask portion includes a first layer in contact with the first surface of the substrate and a second layer spaced further from the substrate than the first layer. The first layer is recessed further than the second layer in a direction toward the first area in an edge portion of the mask portion that partitions the first area and the second area.

Abstract: In a substrate holder, a gas supply part sends out a gas to the space between the lower surface of a substrate and a base surface of a base part to form a radially outward airflow. A division plate is arranged radially outward of the outer peripheral edge of the substrate on the base surface of the base part to surround the substrate. The inner peripheral edge of the division plate and the outer peripheral edge of the substrate face each other in the radial direction with a space in between. The upper surface of the division plate is located below or at the same position in the up-down direction as the upper surface of the substrate. An annular passage is provided between the lower surface of the division plate and the base surface of the base part.