Abstract: A wafer carrier may include a first main surface suitable for receiving wafers, a second main surface arranged on a side opposite to the first main surface, and an annular depression or an elevation containing wafer carrier material in the region of the second main surface, concentric with respect to the wafer carrier.

Abstract: In some embodiments, the present disclosure relates to an image sensor. The image sensor comprises a substrate. A photodetector is in the substrate and includes a semiconductor guard ring extending into a first side of the substrate. A shallow trench isolation (STI) structure extends into the first side of the substrate. An outer isolation structure extends into a second side of the substrate, opposite the first side of the substrate, to the STI structure. The STI structure and the outer isolation structure laterally surround the photodetector. An inner isolation structure extends into the second side of the substrate and overlies the photodetector. The inner isolation structure is vertically separated from the photodetector by the substrate. Further, the outer isolation structure laterally surrounds the inner isolation structure.

Abstract: The present disclosure describes a structure with passivation layers with rounded corners and a method for forming such a structure. The method includes forming a first insulating layer on a substrate, where the substrate includes a first conductive structure. The method further includes forming an opening in the first insulating layer to expose the first conductive structure and forming a second conductive structure on the first insulating layer, where the second conductive structure is in contact with the first conductive structure through the opening.

Abstract: Interconnect structures having dielectric layers with nitrogen-containing crusts and methods of fabrication thereof are disclosed herein. An exemplary method includes forming a first interconnect opening in a first interlayer dielectric (ILD) layer that exposes an underlying conductive feature, such as a source/drain, a gate, a contact, a via, or a conductive line. The method includes nitridizing sidewalls of the first interconnect opening, which are formed by the first ILD layer, before forming a first metal contact in the first interconnect opening. The nitridizing converts a portion of the first ILD layer into a nitrogen-containing crust. The first metal contact can include a metal plug and dielectric spacers between the metal plug and the nitrogen-containing crust of the first ILD layer. The method can include forming a second interconnect opening in a second ILD layer that exposes the first metal contact and forming a second metal contact in the second interconnect opening.

Abstract: A method includes: forming a first conductive structure in a first dielectric layer; forming a conductive protection structure that is coupled to at least part of the first conductive structure; forming a second dielectric layer over the first dielectric layer; forming a via hole extending through at least part of the second dielectric layer to expose a portion of the conductive protection structure; cleaning the via hole; and refilling the via hole with a conductive material to form a via structure.

Abstract: A method of patterning a substrate, where the method includes: forming first structures over a memorization layer, the first structures including a first row of lines that are parallel with each other and spaced apart from each other; executing a first anti-spacer formation process to form first trenches along sidewalls of the first structures and sidewalls of a first fill material, the first trenches defining a first etch pattern; transferring the first etch pattern into the memorization layer and removing materials above the memorization layer; forming second structures over the memorization layer, the second structures including a second row of lines that are parallel with each other and spaced apart, placement of the second row of lines being shifted relative to the first row of lines; executing a second anti-spacer formation process to form second trenches formed along sidewalls of the second structures and sidewalls of a second fill material, the second trenches defining a second etch pattern; and trans

Abstract: A method of forming a semiconductor device with air gaps for low capacitance interconnects. The method includes providing a substrate containing raised metal features with a top area and a sidewall, and a void between the raised metal features, filling the void with a sacrificial fill material, and selectively depositing a blocking layer on the sacrificial fill material. The method further includes depositing a cap layer on the top area of the raised metal features, where the cap layer has an overhang that extends past the sidewall, removing the blocking layer and the sacrificial fill material between the raised metal features, and depositing a dielectric film, where the dielectric film forms an air gap between the raised metal features below the overhang.

Abstract: The present disclosure relates a method of forming an integrated chip. The method includes forming a first interconnect within a first inter-level dielectric (ILD) layer over a substrate, and forming a second ILD layer over the first ILD layer. The second ILD layer is patterned to form an interconnect opening that exposes the first interconnect. A blocking layer is formed onto the first interconnect. A barrier layer is formed within the interconnect opening and the blocking layer is removed to expose the first interconnect. A second interconnect is formed within the interconnect opening.

Abstract: A structure is provided including a substrate and a tungsten-containing layer. The tungsten-containing layer includes a nucleation layer disposed on the substrate and a bulk layer is disposed over the nucleation layer. The nucleation layer includes tungsten and the bulk layer includes about 0.1% to about 20% atomic molybdenum. The tungsten-containing layer includes a film stress of about 350 MPa to about 450 MPa.

Abstract: Provided herein are methods and apparatuses for forming metal films such as tungsten (W) and molybdenum (Mo) films on semiconductor substrates. The methods involve forming a reducing agent layer, then exposing the reducing agent layer to a metal precursor to convert the reducing agent layer to a layer of the metal. In some embodiments, the reducing agent layer is a silicon- (Si-) and boron- (B-) containing layer. The methods may involve forming the reducing agent layer at a first substrate temperature, raising the substrate temperature to a second substrate temperature, and then exposing the reducing agent layer to 10 the metal precursor at the second substrate temperature. The methods may be used to form fluorine-free tungsten or molybdenum films in certain embodiments. Apparatuses to perform the methods are also provided.

Abstract: Provided is a method of fabricating a semiconductor device including forming a device isolation layer defining active regions on a substrate and forming gate lines intersecting the active regions and buried in the substrate. The forming of the gate lines includes forming a trench crossing the active regions in the substrate, forming a conductive layer filling the trench, and performing a heat treatment process on the conductive layer. The conductive layer includes a nitride of a first metal. Nitrogen atoms in the conductive layer are diffused toward an outer surface and a lower surface of the conductive layer by the heat treatment process.

Abstract: A semiconductor substrate has a metal via in the substrate, and has, on the substrate, a metal line that is less than 8 nanometers (nm) wide and at least 20 nm tall. A method for making a semiconductor structure includes forming a metal via in a substrate; forming a mandrel atop and offset from the via; depositing a metal-containing liner onto the mandrel; exposing the top of the mandrel by anisotropically etching the liner, thereby defining a separate portion of the liner at each side of the mandrel; and growing a metal line on each portion of the liner.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a first epitaxial structure and a second epitaxial structure spaced apart from the first epitaxial structure. The semiconductor device structure also includes a conductive contact electrically connected to the first epitaxial structure and a first conductive via over the conductive contact. The semiconductor device structure further includes a second conductive via directly above the second epitaxial structure. The second conductive via is longer than the first conductive via.

Abstract: Structures and methods for separating semiconductor wafers into individual dies are disclosed. A semiconductor wafer or panel can include a crack assist structure in a scribe junction. The crack assist structure can include a plurality of vertical walls extending at least partially through a thickness of the wafer. In some embodiments, the plurality of vertical walls can be coupled to a weak interface. The weak interface can guide cracks that form during the dicing process in a direction along the walls, away from active circuitry. After dicing, the resulting semiconductor devices can include a plurality of vertical walls extending at least partially through a thickness of the semiconductor device. Each of the plurality of vertical walls can include at least a portion extending substantially parallel to a sidewall of the semiconductor device.

Abstract: According to one embodiment, a semiconductor wafer is formed with a plurality of first regions each provided with a circuit element and a second region between the first regions. The semiconductor wafer includes a first structure in which a first embedding material is embedded in a first recess extending in a first direction perpendicular to a surface of a substrate. The first structure is between edges of the first regions and a third region that is cut in the second region when the first regions are separated.

Abstract: A method of designing a layout of a semiconductor device includes forming a second layout by analyzing a first layout and correcting at least a portion of a plurality of filler cells, wherein the forming the second layout includes detecting transition regions due to a difference in width by respectively comparing a first width of a first active line and a second width of a second active line with a width of a dummy active line, in the first layout; and correcting the dummy active line of the first filler cell by analyzing the detected transition regions, wherein, in the correcting the dummy active line of the first filler cell, the dummy active line is corrected to be a corrected dummy active line having the same width as an active line having a narrower width, among the first and second active lines.

Abstract: A method of forming a semiconductor device includes: forming a fin structure protruding above a substrate, where the fin structure comprises a fin and a layer stack overlying the fin, where the layer stack comprises alternating layers of a first semiconductor material and a second semiconductor material; forming a dummy gate structure over the fin structure; forming openings in the fin structure on opposing sides of the dummy gate structure, where the openings extend through the layer stack into the fin; forming a dielectric layer in bottom portions of the openings; and forming source/drain regions in the openings on the dielectric layer, where the source/drain regions are separated from the fin by the dielectric layer.

Abstract: A device includes a fin on a substrate; a first transistor, including: a drain region and a first source region in the fin; and a first gate structure on the fin between the first source region and the drain region; a second transistor, including: the drain region and a second source region in the fin; and a second gate structure on the fin between the second source region and the drain region; a first resistor, including: the first source region and a first resistor region in the fin; and a third gate structure on the fin between the first source region and the first resistor region; and a second resistor, including: the second source region and a second resistor region in the fin; and a fourth gate structure on the fin between the second source region and the second resistor region.

Abstract: The present disclosure relates to a semiconductor device and a manufacturing method, and more particularly to a semiconductor device with fin structures having different top surface crystal orientations and/or different materials. The present disclosure provides a semiconductor structure including n-type FinFET devices and p-type FinFET devices with different top surface crystal orientations and with fin structures having different materials. The present disclosure provides a method to fabricate a semiconductor structure including n-type FinFET devices and p-type FinFET devices with different top surface crystal orientations and different materials to achieve optimized electron transport and hole transport. The present disclosure also provides a diode structure and a bipolar junction transistor structure that includes SiGe in the fin structures.

Abstract: A TSV test structure includes: a plurality of TSV groups, each TSV group comprising electrically connected TSVs; a power supply circuit, connected with the TSV groups and configured to provide a first voltage or a second voltage to each TSV group; a control circuit, connected to the power supply circuit and configured to provide a first control signal and a second control signal to the power supply circuit, wherein the power supply circuit outputs the first voltage to at least one TSV group according to the first control signal, and outputs the second voltage to at least one TSV group according to the second control signal; and a readout circuit, electrically connected with the plurality of TSV groups and configured to read electrical signals on the plurality of TSV groups after the control circuit provides the first control signal and the second control signal.

Abstract: A method of polishing a substrate includes polishing a conductive layer on the substrate at a polishing station, monitoring the layer with an in-situ eddy current monitoring system to generate a plurality of measured signals values for a plurality of different locations on the layer, generating thickness measurements the locations, and detecting a polishing endpoint or modifying a polishing parameter based on the thickness measurements. The conductive layer is formed of a first material having a first conductivity. Generating includes calculating initial thickness values based on the plurality of measured signals values and processing the initial thickness values through a neural network that was trained using training data acquired by measuring calibration substrates having a conductive layer formed of a second material having a second conductivity that is lower than the first conductivity to generated adjusted thickness values.

Abstract: A chip grading method includes: electrical performance test data of at least one wafer is acquired; chips on the wafer are grouped by using a clustering analysis algorithm according to the electrical performance test data of the wafer, so as to obtain a group to which each of the chips belongs, and a clustering model is established; for each group, a feature set of each group is extracted by using a Principal Component Analysis (PCA) algorithm, and a PCA model is established; the chips in each group are ranked according to scores of the chips in the group with respect to each of a preset number of features in the feature set, so as to obtain a level to which each of the chips belongs; and grading results of the chips are obtained according to both the group and the level to which each chip belongs.

Abstract: According to one embodiment, a semiconductor manufacturing device includes a holder, a discharger, a driver, a controller, first and second sensors, and a processor. The holder holds a substrate and rotates. The discharger discharges a liquid to a front surface of the substrate held by the holder. The driver displaces the discharger. The controller controls the driver such that the liquid is discharged to a discharge position of the front surface. The first sensor measures a first distance from a reference surface below a rear surface of the substrate to a first position of the rear surface. The second sensor measures a second distance from the reference surface to a second position of the rear surface, the second point being on an inner side from the first position of the rear surface.

Abstract: A test key configured to measure resistance of a through semiconductor via in a semiconductor substrate is provided. The test key includes a first resistor, a first conductor, a first probe pad, a second conductor, a second probe pad, a third conductor, a third probe pad, a fourth conductor, and a fourth probe pad. The first probe pad is electrically connected to a first end of the through semiconductor via by the first resistor and the first conductor. The second probe pad is electrically connected to the first end of the through semiconductor via by the second conductor. The third probe pad is electrically connected to a second end of the through semiconductor via by the third conductor. The fourth probe pad is electrically connected to the second end of the through semiconductor via by the fourth conductor.

Abstract: A through-substrate via (TSV) test structure including a substrate, a first TSV, and a test device is provided. The substrate includes a test region. The first TSV is located in the substrate of the test region. The test device is located on the substrate of the test region. The test device and the first TSV are separated from each other. The shortest distance between the test device and the first TSV is less than 10 ?m.

Abstract: A semiconductor test structure and a method for manufacturing the same are provided. The method for manufacturing a semiconductor test structure includes providing a semiconductor structure, which includes a doped layer and a metal layer located in the doped layer; forming at least one opening exposing the metal layer in the semiconductor structure; removing the metal layer by a reaction between a wet etching solution and the metal to form a hollow portion, in which the wet etching solution enters the semiconductor structure through the opening; and filling the hollow portion with a non-metallic material layer through the opening to form the semiconductor test structure, in which an evaporation pressure of the metal layer is greater than an evaporation pressure of the non-metallic material layer.

Abstract: A semiconductor package includes a semiconductor chip having first and second contact pads that are alternately arranged in a first direction; an insulating film having first openings respectively defining first pad regions of first contact pads, and second openings respectively defining second pad regions of the second contact pads; first and second conductive capping layers on the first and second pad regions, respectively; and an insulating layer on the insulating film, and having first and second contact holes respectively connected to the first and second conductive capping layers. Each of the first and second pad regions includes a bonding region having a first width and a probing region having a second width, greater than the first width, and each of the second pad regions is arranged in a direction that is opposite to each of the plurality of first pad regions.

Abstract: A semiconductor device includes a holding member including a component placement part; a back plate; a substrate including a mounting surface facing the holding member, and a back surface facing the back plate; a plurality of mounting pads located at the mounting surface; a package component including a terminal placement surface facing the mounting surface; and a plurality of package terminals located at the terminal placement surface. The substrate is held between the holding member and the back plate. The package component is located in the component placement part, and held between the holding member and the substrate. The package terminals are in direct contact with the mounting pads.

Abstract: A fingerprint sensor device and a method of making a fingerprint sensor device. As non-limiting examples, various aspects of this disclosure provide various fingerprint sensor devices, and methods of manufacturing thereof, that comprise an interconnection structure, for example a bond wire, at least a portion of which extends into a dielectric layer utilized to mount a plate, and/or that comprise an interconnection structure that extends upward from the semiconductor die at a location that is laterally offset from the plate.

Abstract: An antenna package includes a redistribution layer (RDL) structure having a top surface and a bottom surface opposite to the top surface and a TSV die disposed on the top surface of the RDL structure and encapsulated by a molding compound. The TSV die includes an active side and a rear side, and a sidewall of the TSV die is covered with the molding compound. The TSV die includes a plurality of through-silicon-vias including RF signal vias and ground vias penetrating through an entire thickness of the TSV die. An antenna structure is disposed on the rear side of the TSV die and is connected to the RF signal vias and ground vias.

Abstract: A semiconductor package includes a first substrate, a semiconductor chip disposed on the first substrate, a mold layer disposed on the first substrate and at least partially covering the semiconductor chip, and a heat dissipation structure disposed on a first top surface of the semiconductor chip and in the mold layer. The heat dissipation structure covers an inner side surface of the mold layer. A surface roughness of the first top surface of the semiconductor chip is greater than a surface roughness of a side surface of the semiconductor chip, and a surface roughness of the inner side surface of the mold layer is greater than a surface roughness of a top surface of the mold layer. The heat dissipation structure includes voids therein.

Abstract: A semiconductor die package and a method of forming the same are provided. The semiconductor die package includes a package substrate, semiconductor dies over the package substrate, and an underfill element over the package substrate and surrounding the semiconductor dies. A portion of the underfill element is located between the semiconductor dies. The semiconductor die package also includes lid structures respectively attached to the top surfaces of the semiconductor dies. In plan view, each lid structure is located within the periphery of the top surface of the corresponding semiconductor die. Each lid structure is disconnected from other lid structures, and a gap is formed between adjacent lid structures and located over the portion of the underfill element.

Abstract: Copper-connected glass modules on a glass board are provided. An apparatus includes one or more dies, an interposer formed of a first material, the interposer coupled to the one or more silicon dies, the interposer comprising an interconnection layer formed on one side of the interposer, wherein the interconnection layer includes a plurality of copper interconnects, and a substrate comprising a top layer, glass core, and a bottom layer, wherein the interconnection layer of the interposer and the top layer of the substrate are copper bonded.

Abstract: A package structure includes first and second package components, an underfill layer disposed between the first and second package components, and a metallic layer. The first package component includes semiconductor dies, a first insulating encapsulation laterally encapsulating the semiconductor dies, and a redistribution structure underlying first surfaces of the semiconductor dies and the first insulating encapsulation. The second package component underlying the first package component is electrically coupled to the semiconductor dies through the redistribution structure. The underfill layer extends to cover a sidewall of the first package component, the metallic layer overlying second surfaces of the semiconductor dies and the first insulating encapsulation, and a peripheral region of the second surface of the first insulating encapsulation is accessibly exposed by the metallic layer, where the first surfaces are opposite to the second surfaces.

Abstract: A semiconductor structure is provided. The semiconductor structure includes a substrate and a device region formed over the substrate. The semiconductor structure further includes an interconnect structure formed over the device region and a first passivation layer formed over the interconnect structure. The semiconductor structure also includes a metal pad formed over and extending into the first passivation layer and a second passivation layer formed over the first passivation layer. The second passivation layer includes a thermal conductive material, and the thermal conductivity of the thermal conductive material is higher than 4 W/mK.

Abstract: A surplus liquid reservoir attached to a vapor chamber integrated heat spreader (IHS) and placed near a heat source on a heterogenous die. The vapor chamber integrated heat spreader (IHS) includes a main heat transfer portion that encloses a vapor channel, a first wick material, and a first working fluid. The surplus liquid reservoir is provided by a reservoir leg mechanically coupled, on a first side, to the main heat transfer portion, the reservoir leg has a reservoir portion with a second working fluid and second wick material that is in contact with the first wick material. The surplus liquid reservoir can either support a PL2 that is higher than a given vapor chamber Qmax for a significantly long time or increase the PL2 value to a significantly higher value.

Abstract: A semiconductor heat sink made of a first material including a plurality of spaced-apart depressions and an area surrounding the depressions filled with one or more materials having a heat conductivity greater than the first material.

Abstract: Embodiments disclosed herein include electronic packages. In an embodiment, an electronic package comprises a package substrate, a first die electrically coupled to the package substrate, and a mold layer over the package substrate and around the first die. In an embodiment, the electronic package further comprises a through mold opening through the mold layer, and a through mold interconnect (TMI) in the through mold opening, wherein a center of the TMI is offset from a center of the through mold opening.

Abstract: A semiconductor package includes a power semi conductor chip comprising SiC, a leadframe part including Cu, wherein the power semiconductor chip is arranged on the leadframe part, and a solder joint electrically and mechanically coupling the power semiconductor chip to the leadframe part, wherein the solder joint includes at least one intermetallic phase.

Abstract: A manufacturing method of a semiconductor device forms an external connection terminal in a relatively short time and at a low cost and improves mounting reliability of a mounting substrate.

Abstract: A semiconductor package includes a package substrate, an interposer on the package substrate, and a first semiconductor device and a second semiconductor device on the interposer, the first and second semiconductor devices connected to each other by the interposer, wherein at least one of the first semiconductor device and the second semiconductor device includes an overhang portion protruding from a sidewall of the interposer.

Abstract: An interconnection substrate includes a thermomechanical support crossed by at least one electric interconnection hole. A first interconnection network is formed on a first surface of the thermomechanical support and a second interconnection network is formed on a second surface of the thermomechanical support. Each interconnection network includes and interconnection level formed by at least one metal track from which at least one metal via extends. The at least one metal track and the at least one metal via are embedded in an insulator layer so that the at least one metal via is flush with a surface of the insulator layer most distant from the thermomechanical support. At least one metal track protrudes from the insulator layer of the last interconnection level. The metal vias are configured to electrically couple together two adjacent levels and/or the last level with the at least one protruding metal track.

Abstract: Disclosed are an interposer and a chip package structure. The interposer may include: at least one signal transmission vias; at least one insulator isolation rings, one of said insulator isolation rings encircling one of said signal transmission vias; and at least one reverse-biased PN junction isolation rings, one of said reverse-biased PN junction isolation rings surrounding at least one of said insulator isolation rings, and the reverse-biased PN junction isolation ring including a semiconductor ring of a first conductivity type and a semiconductor ring of a second conductivity type from inside to outside, the semiconductor ring of the second conductivity type is connected to a bias potential.

Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a first redistribution structure, a packaged device and a second redistribution structure. The packaged device is on a first side of the first redistribution structure and the second redistribution structure is on a second side of the first redistribution structure. An encapsulant is on the second side of the first redistribution structure and laterally around the second redistribution structure, wherein the encapsulant covers a periphery of the second redistribution structure such that an uncovered surface of the second redistribution structure is defined.

Abstract: A ball grid array (BGA) package for use in a touch panel controller includes a package substrate and a plurality of solder bumps. The plurality of solder bumps are disposed on the package substrate, arranged in a staggered pattern surrounding a hollow region on the package substrate, and coupled to electrodes of a touch panel via a multi-layer circuit board. The staggered pattern includes Ys1 top rows and Ys2 bottom rows, a minimum vertical distance between centers of two vertically adjacent solder bumps in the Ys1 top rows and the Ys2 bottom rows being referred to as an equivalent vertical pitch, and Ys1, Ys2 being integers exceeding 2. the hollow region has a minimum length defined by the minimum length=((Ys1?2)+(Ys2?2))*the equivalent vertical pitch.

Abstract: A printed circuit board according to an embodiment comprises: a first insulation layer; a first circuit pattern disposed on one surface of the first insulation layer and including a pad; and a second insulation layer disposed on one surface of the first insulation layer and including a cavity exposing the pad, wherein the first circuit pattern includes a 1-1 metal layer disposed on one surface of the first insulation layer, and a 1-2 metal layer disposed on one surface of the 1-1 metal layer, wherein the area of the 1-1 metal layer is greater than the area of the 1-2 metal layer, and at least a portion of a side surface of the 1-1 metal layer is exposed through the cavity.

Abstract: A circuit assembly may include a substrate and a pattern of contact points formed from deformable conductive material supported by the substrate. The assembly may further include an electric component supported by the substrate and having terminals arranged in a pattern corresponding to the pattern of contacts points. The one or more of the terminals of the electric component may contact one or more of the corresponding contact points to form one or more electrical connections between the electric component and the contact points.

Abstract: Disclosed are interconnection structures, semiconductor packages including the same, and methods of fabricating the same.

Abstract: A semiconductor structure includes an interposer substrate, an electronic device formed in a device region of the interposer substrate, a guard ring formed in the interposer substrate and surrounding the device region, a first redistribution layer on an upper surface of the interposer substrate and covering the device region and the guard ring, and a chip disposed on the first redistribution layer and overlapping the device region.

Abstract: A semiconductor structure includes an opening formed in a surface of an insulating layer, and a lower metal layer on the surface of the insulating layer, and sidewalls and a bottom surface of the opening in the surface of the insulating layer. The sidewalls are tapered inwardly from the surface of the insulating layer to the bottom surface of the opening by a taper angle of between 10 degrees and 45 degrees.