Abstract: An ion implantation system, ion source, and method are provided for forming an aluminum ion beam from an aluminum-containing species to an ion source. One or more of a halide species and a halide molecule are introduced to the ion source, where the halide species is selected from a group consisting of atomic chlorine, atomic bromine, and atomic iodine, and the halide molecule comprises a halide selected from a group consisting of chlorine, bromine, and iodine. The one or more of the halide species and the halide molecule clean one or more components of the ion source and further react with the aluminum-containing species to generate an aluminum-halide vapor. The aluminum ion beam is further formed from at least the aluminum-halide vapor.

Abstract: Embodiments of the disclosure relate to methods for molybdenum gapfill. Additional embodiments provide a method of forming a molybdenum gapfill without substantial voids. Some embodiments of the disclosure are relevant for higher aspect ratio features including DRAM memory cells.

Abstract: A coating system for coating an interior surface of a housing comprising: first and second closures engaging first and second ends, respectively, of the housing to provide an enclosed volume; first and second flow lines coupled to the first and second closures, respectively, the first flow line and/or the second flow line connected to an inert gas source; a reactant gas source(s) comprising a reactant gas and coupled to the first and/or second flow line; and a controller in electronic communication with the reactant gas and inert gas sources, and configured to control flow of inert gas into the enclosed volume, and counter current injection of reactant gas from the reactant gas source(s) into the enclosed volume whereby introduction of pulse(s) of the reactant gas into the enclosed volume are separated by introduction of inert gas into the enclosed volume, and coating layer(s) are deposited on the interior surface.

Abstract: Methods for selective deposition are described herein. The methods include depositing an oxide on a first portion of a substrate surface selected from the group consisting of a metal surface, a metal nitride surface and a metal silicide surface. The methods further comprise selectively depositing a molybdenum film on a second portion of the substrate surface that does not have the oxide deposited thereon.

Abstract: Methods of depositing a molybdenum sulfide film with increased sulfur:molybdenum ratio are described. The methods include pre-cleaning a dielectric material with oxygen radicals prior to formation of a molybdenum sulfide film that has a lower oxygen content than would be formed without the pre-cleaning.

Abstract: The present invention relates to a method for producing a preferably elongated SiC solid, in particular of polytype 3C. The method according to the invention preferably includes at least the following steps: introducing at least a first source gas into a process chamber, said first source gas including Si, introducing at least one second source gas into the process chamber, the second source gas including C, electrically energizing at least one separator element disposed in the process chamber to heat the separator element, setting a deposition rate of more than 200 ?m/h, where a pressure in the process chamber of more than 1 bar is generated by the introduction of the first source gas and/or the second source gas, and where the surface of the deposition element is heated to a temperature in the range between 1300° C. and 1700° C.g.

Abstract: A method of cleaning a plasma chamber is disclosed. Periodically, a cleaning process is performed. The cleaning process comprises introducing a mixture of fluoride molecules and argon into the plasma chamber and creating a plasma. The fluoride molecules are ionized and interact with the deposited material on the chamber walls. This causes the fluorine ions to bond to the deposited material, which typically results in a gas that can be exhausted from the plasma chamber. When the deposited material has been removed, the amount of free fluorine within the plasma chamber increases. This increase in fluorine may be used to determine when the plasma chamber is cleaned.

Abstract: There is provided a technique that includes removing a substance adhering to the interior of the process container by performing a cycle a predetermined number of times under a first temperature, the cycle including: (a) supplying one gas of a nitrogen- and hydrogen-containing gas and a fluorine-containing gas into the process container after a substrate is processed; and (b) supplying the other gas different from the one gas of the nitrogen- and hydrogen-containing gas and the fluorine-containing gas into the process container where the one gas remains.

Abstract: An exhaust gas filtering apparatus (1) and coating equipment (1000). The exhaust gas filtering apparatus (1) comprises at least one filtering unit (20), a first mounting unit (11), and a second mounting unit (12), where the filtering unit (20) is convenient to replace and can be replaced in a timely manner. The coating equipment (1000) comprises a coating body (2) and the exhaust gas filtering apparatus (1), where the coating body (2) is provided with a coating compartment (300), and a gas inlet (101) of the exhaust gas filtering apparatus (1) is in communication with the coating compartment (300).

Abstract: Described are vapor deposition methods for depositing metal films or layers onto a substrate, wherein the metal is molybdenum or tungsten; the methods involve organometallic precursor compounds that contain the metal and one or more carbon-containing ligands, and include depositing a metal layer formed from the metal of the precursor, onto a substrate, followed by introducing oxidizer to the formed metal layer.

Abstract: A coating system for coating, with a surface coating process, an interior surface of a housing defining an interior volume, having: a first closure and a second closure to sealingly engage with the housing; one or more first flow lines and second flow lines fluidically coupled to the first and second closure, respectively; a pressurized cell comprising a pressurized gas comprising at least one reactant and at a pressure of greater than a pressure within the housing, wherein the pressurized cell is fluidically coupled to a pressurized cell line comprising one of the first flow lines or second flow lines; and a controller in electronic communication with the pressurized cell and configured to control injection of a pulse of the pressurized gas into a flow of inert gas in the pressurized cell line, whereby the pulse is introduced into the interior volume, coating the interior surface with a coating layer.

Abstract: A precursor supply system includes a storage tank storing the precursor in a solid state; a transfer pipe connected to the storage tank to transfer the precursor in a solid state; a phase converter connected to the transfer pipe and sublimating the transported solid-state precursor into vapor; a supply pipe connected to the phase converter and transporting a precursor in a vaporous state; and a process chamber disposed adjacently to the phase converter and connected to the supply pipe.

Abstract: An apparatus for rotating a substrate within a deposition chamber is described. The substrate is rotated using a substrate support assembly with a shaft and a susceptor coupled to a top of the shaft. The susceptor and the shaft are coupled together using a cogged feature. The cogged feature includes a plurality of teeth or projections on a coupling portion of the shaft which interlock with an indent disposed on the bottom of the susceptor. A lift pin assembly is further coupled to the shaft and configured to raise and lower a substrate from the susceptor.

Abstract: An apparatus for heating a gas is described. The apparatus is a pre-heat ring and heater assembly positioned in a deposition chamber, such as an epitaxial deposition chamber. The pre-heat ring has a first portion configured to be heated using one or more heaters. The one or more heaters are disposed through a sidewall of the process volume beneath the pre-heat ring and are configured to heat the pre-heat ring so that gas flowed over the pre-heat ring is also heated before being flowed over a substrate. The one or more heaters may include two heaters disposed at distal ends of the first portion of the pre-heat ring. One or more temperature sensors are also configured to measure a temperature of the pre-heat ring.

Abstract: Embodiments described herein relate semiconductor manufacturing and processing. More particularly, a processing systems for auto correcting misalignments of substrates in process chambers is provided. The processing system includes a process chamber having a substrate support disposed within a chamber volume of the process chamber. The substrate support includes a pocket for receiving a substrate, and a plurality of flow conduits extending between a top surface of the pocket and a bottom surface of the substrate support. An imaging device is coupled to the process chamber and configured to monitor a position of a substrate when loaded in the pocket of the substrate support.

Abstract: The disclosed techniques relate to a method for depositing at least one layer composed of an ionically bonded solid on a substrate, comprising the following steps: converting a coating material to the gas phase and depositing the coating material converted to the gas phase on the substrate. The layer is irradiated with UV/VIS light during the deposition. The disclosed techniques also relate to an apparatus for implementing the disclosed method and optical elements and devices created using the disclosed method.

Abstract: The invention provides in method and systems for determining the amount of solid precursor in a precursor vessel of a semiconductor manufacturing process, wherein the amount of precursor in the precursor vessel is determined by measuring through monochromatic measurements an optical absorption in the process gas flowing from the precursor vessel to the process chamber.

Abstract: The present invention refers to a method for depositing a chromium-comprising passivation layer on a zinc-comprising coating, wherein the zinc-comprising coating additionally comprises Fe, Sn, Mn, or mixtures thereof. The method utilizes a passivation composition comprising 0.001 mg/L to 200 mg/L, based on the total volume of the passivation composition, of at least one corrosion-inhibiting agent selected from the group consisting of unsubstituted azole compounds, substituted azole compounds, unsubstituted aliphatic organic acids with at least one mercapto-group, substituted aliphatic organic acids with at least one mercapto-group, salts, and mixtures thereof.

Abstract: A method of processing a substrate includes an etchant supplying operation of supplying an etchant to a substrate; a puddle operation of, by rotating the substrate at a first rotational speed, forming a liquid film of the etchant supplied to the substrate in a puddle shape; and a thickness adjusting operation of changing a rotational speed of the substrate to a rotational speed different from the first rotational speed to adjust a thickness of the liquid film of the etchant. Using the method, dispersion of the etching rate may be effectively controlled.

Abstract: A method of forming a metallic pattern on a substrate is provided. The method includes applying onto a metallic surface, a chemically surface-activating solution having an activating agent that chemically activates the metallic surface; non-impact printing an etch-resist ink on the activated surface to produce an etch resist mask according to a predetermined pattern, wherein at least one ink component within the etch-resist ink undergoes a chemical reaction with the activated metallic surface to immobilize droplets of the etch-resist ink when hitting the activated surface; performing an etching process to remove unmasked metallic portions that are not covered with the etch resist mask; and removing the etch-resist mask.

Abstract: A substrate processing apparatus includes: a processing tank configured to store a processing liquid for processing a substrate; a circulation path through which the processing liquid is taken out from the processing tank and is returned to the processing tank; a substrate holder configured to hold the substrate; a lifter configured to raise and lower the substrate holder between an immersion position inside the processing tank and a standby position above the processing tank; and a controller configured to control the lifter, wherein the processing liquid is a mixed liquid obtained by mixing a first component and a second component and generates a heat of mixing, and the controller is configured to perform a control to immerse the substrate in the mixed liquid before a temperature of the mixed liquid rises due to the heat of mixing and reaches a peak temperature.

Abstract: The present invention regards a method for converting carbon dioxide into carbon monoxide in high-temperature, dry, solid oxide electrolysis providing increased lifetime of SOECs and SOEC stacks by addressing the problem of coking, while simultaneously ensuring highest possible CO production from each cell or stack.

Abstract: Carbon-neutral fuels are produced from aragonite in a solar thermal decomposition process in which the carbon dioxide generated from the aragonite is catalytically converted to methane, ethanol, or Fischer-Tropsch liquids. Advantageously, heat from the aragonite production can be recovered and used in downstream processes to thereby minimize the carbon footprint of the fuel production.

Abstract: The present disclosure provides systems and methods for producing carbon products via electrochemical reduction from fluid streams containing a carbon-containing material, such as, for example, carbon dioxide. Electrochemical reduction systems and methods of the present disclosure may comprise micro- or nanostructured membranes for separation and catalytic processes. The electrochemical reduction systems and methods may utilize renewable energy sources to generate a carbon product comprising one or more carbon atoms (C1+ product), such as, for example, fuel. This may be performed at substantially low (or nearly zero) net or negative carbon emissions.

Abstract: Disclosed herein is an electro-synthesizer unit comprising a first compartment comprising a cathode and a first electrolyte, a second compartment comprising an anode and a second electrolyte and a third compartment comprising a third electrolyte. The unit is configured to produce acid and base solution at desired concentrations. Also disclosed are methods of using the electro-synthesizer unit and producing the acid and base solution at desired concentrations.

Abstract: An environment control system utilizes oxygen and humidity control devices that are coupled with an enclosure to independently control the oxygen concentration and the humidity level within the enclosure. An oxygen depletion device may be an oxygen depletion electrolyzer cell that reacts with oxygen within the cell and produces water through electrochemical reactions. A desiccating device may be g, a dehumidification electrolyzer cell, a desiccator, a membrane desiccator or a condenser. A controller may control the amount of voltage and/or current provided to the oxygen depletion electrolyzer cell and therefore the rate of oxygen reduction and may control the amount of voltage and/or current provided to the dehumidification electrolyzer cell and therefore the rate of humidity reduction. The oxygen level may be determined by the measurement of voltage and a limiting current of the oxygen depletion electrolyzer cell. The enclosure may be a food or artifact enclosure.

Abstract: A method of operating an electro-synthetic or electro-energy cell performs an electrochemical reaction. An electro-synthetic or electro-energy cell includes a reservoir containing a liquid electrolyte, a first gas diffusion electrode, and a second electrode. A porous capillary spacer is positioned between the first gas diffusion electrode and the second electrode. The porous capillary spacer can have an end positioned within the reservoir and in liquid contact with the liquid electrolyte. The method includes contacting the first gas diffusion electrode and the second electrode with the liquid electrolyte, and applying or generating a voltage across the first gas diffusion electrode and the second electrode.

Abstract: Disclosed is a water electrolysis system that improves durability by preventing performance degradation inside a water electrolysis stack. According to the present invention, in order to reduce electrode degradation in a water electrolysis unit cell, which can frequently occur in the starting and stopping stages of a process for producing hydrogen from the water electrolysis system, power of a constant current is supplied to the water electrolysis stack and electrolyte circulating water is heated while being circulated in the water electrolysis stack in the starting stage of the water electrolysis system. Also, when performing a stopping process, power of a constant current is supplied to the water electrolysis stack and electrolyte circulating water is cooled while being circulated in the water electrolysis stack. Accordingly, it is possible to improve durability by preventing performance degradation inside the water electrolysis stack.

Abstract: Disclosed is an integrally combined electrical current carrier, circulation chamber and frame (CCF) formed as a single or double part (CCF) for use in unipolar electrochemical devices. The CCF is structured to define an internal circulation chamber for circulation of electrolyte, products, and reactants as well as apertures which form flow passageways when the filter press device is assembled. Affixed on opposed surfaces of the CCFs are electrically conductive planar electroactive structures which are in electrical contact with the CCF. The circulation chamber is formed by the depth of the CCF itself between opposing electroactive structures. Multiple CCFs are assembled and compressed together to form the filter press electrolyser apparatus. When power is applied to the CCFs and electroactive structures, the reactants, once they flow into the circulation chamber with the electrolyte, undergo redox reactions to produce products that are collected and exit the electrolyser in upper flow pathways.

Abstract: An electrode for electrochemical applications is coated with a layer of a-C, wherein the layer of a-C comprises at least 10 each of first and second sub-layers, being (i) first sub-layers having high conductivity with a sp2 content of 60-95%, alternating with (ii) second sub-layers having high corrosion resistance with a sp2 content of 50-90%, wherein the sp2 content of the first sub-layers is at least 3% greater than the sp2 content of the second sub-layers. A method of making such electrodes comprises:?a) depositing a first sub-layer comprising a-C, ?b) depositing a second sub-layer comprising a-C wherein the sp2 content of the first sub-layer is at least 3% greater than the sp2 content of the second sub-layer, and ?c) repeating the steps above to deposit at least 10 first sub-layers alternating with 10 second sub-layers, so as to produce the electrodes.

Abstract: A method for preparing a COF-protected electrode and an electrode are provided. The method includes mixing an organic framework, a small molecular organic acid and a solvent, adding a polar aqueous solution containing a substrate thereto, mixing the above uniformly and heating the system at a low temperature under an inert atmosphere, filtering the solution to obtain precipitates, washing and drying the precipitates to obtain a COF film grown on a surface of the substrate; coating a protective layer on the COF film to obtain a substrate/COF/protective layer film; etching off the substrate to obtain a COF/protective layer film; and transferring the COF/protective layer film to a surface of the electrode, and removing the protective layer.

Abstract: An electrode for use in an alkaline electrolysis process, the electrode comprising: a metal substrate; a catalytic layer disposed on the metal substrate, the catalytic layer comprising nickel and nickel oxide and having a porosity less than about 1 m2/g; and an active composition disposed both on and within the catalytic layer, the active composition comprising one or more metal compounds selected from a cobalt compound, an iridium compound, a rhodium compound, an iron compound, a platinum compound, a lithium compound and a manganese compound. An alkaline water electrolysis unit comprising the electrode and a method of forming the electrode.

Abstract: A separator plate is disclosed for an electrochemical system. The plate comprises a multitude of mutually parallel and adjacent channels that are designed to guide a fluid at least along a region of the separator plate, wherein the channels each have a depth, a longitudinal extent, a channel base and two sidewalls, wherein the following conditions apply to at least one of the channels: the depth of the channel in a first region of the channel is essentially constant along the longitudinal extent, the channel base in the first region of the channel is essentially flat and the depth of the channel in a transition region of the channel that adjoins the first region decreases along the longitudinal extent, as a result of which a channel base continuation in the transition region is curved.

Abstract: The present invention relates to a method for producing a cathode steel bar with copper insert for use in an electrolytic cell for the electrolytic production of aluminium using the Hall-Héroult process. The present invention further relates to a method of removing a copper insert from a cathode bar used in an electrolytic cell for the electrolytic production of aluminium using the Hall-Héroult process, and reusing the copper from old copper inserts in production of new cathode bars with copper insert.

Abstract: It is provided a surface-treated steel sheet that can be produced without using hexavalent chromium and has excellent film wet adhesion and coating secondary adhesion as well as high film corrosion resistance and coating corrosion resistance. It is a surface-treated steel sheet having: a steel sheet; a metallic Cr layer disposed on at least one surface of the steel sheet; and a Cr oxide layer disposed on the metallic Cr layer, and the surface-treated steel sheet has a water contact angle of 50° or less and a total atomic ratio of K, Na, Mg, and Ca adsorbed on the surface to Cr of 5% or less.

Abstract: The present invention refers to an electroplating composition for plating a chromium coating on a substrate, the composition comprising: (i) a source of hexavalent chromium; (ii) one or more than one betaine comprising a quaternary nitrogen and/or salts thereof; and (iii) one or more than one poly-organosiloxane.

Abstract: The present invention relates to an electrolyte for deposition of hard silver layers, wherein the element bismuth is alloyed to the silver. The invention also relates to a method for deposition of a corresponding silver-bismuth alloy from an electrolyte according to the invention and to a correspondingly deposited layer.

Abstract: Method for applying a nanolaminate to a metal workpiece, wherein a coating made of a nanolaminate is applied in a region that is subjected to a notch effect, for example, a weld seam, which nanolaminate consists of a series of at least two metal layers, wherein each metal layer consists of a metal or a metal alloy that differs from the metal or the metal alloy in the adjacent layer. According to the invention, the method can take place with a batching tank locally and/or in situ.

Abstract: The invention relates to a device for forming concretions in an electrolytic medium by electrolysis, the device comprising an anode and a cathode device connected to each other, the cathode device comprising an arrangement of metal conductors forming a mesh that can be developed in a plane, in a plane P, the cathode device having a surface coefficient ? of between 20% and 150%, in which: ?=chemical surface area/influence surface area; the chemical surface area corresponding to the total surface area of the metal conductors intended to be in contact with the electrolytic medium; the influence surface area corresponding to the orthonormal projection of an influence volume in the plane P; and the influence volume corresponding to the volume that extends at any point in space within two centimetres of one of the metal conductors when the mesh is considered developed in a plane, in the plane P.

Abstract: Provided is an aluminum member including: a substrate formed of aluminum or an aluminum alloy. The aluminum member includes an anodic oxide coating that includes a barrier layer in contact with a surface of the substrate, a first porous layer in contact with a surface of the barrier layer on an opposite side to the substrate, and a second porous layer in contact with a surface of the first porous layer on an opposite side to the barrier layer and including multiple pores aligned and linearly extending from a surface in contact with the first porous layer toward an exposed surface. The first porous layer includes at least one of: multiple branching pores; or multiple pores having an average pore diameter larger than that of the second porous layer.

Abstract: Disclosed is a method of treating a surface of an aluminum material, the method including: degreasing an aluminum material; etching the degreased aluminum material; performing a first desmutting treatment by immersing the etched aluminum material in a 25-35 wt % nitric acid solution at a temperature in a range of 25 to 30° C. for at least 60 seconds; performing a second desmutting treatment by immersing the first desmutting-treated aluminum material in a 5-15 wt % nitric acid solution at a temperature in a range of 25 to 30° C. for a time in a range of 30 seconds to 60 seconds; anodizing the second desmutting-treated aluminum material; coloring the anodized aluminum material; and sealing the colored aluminum material.

Abstract: A cup-shaped chuck of a substrate holding device includes an inner pressing ring, a middle frame, a sealing element, an outer pressing ring and a contact ring. The inner pressing ring is locked on the inner peripheral surface of the middle frame. The sealing element has an outer end part, a bottom part and an inner end part. The outer end part of the sealing element wraps the outer peripheral surface of at least part of the middle frame. The bottom part of the sealing element wraps the bottom of the middle frame, and is exposed to the outside of the cup-shaped chuck. The inner end part of the sealing element wraps the inner peripheral surface of at least part of the middle frame and is pressed between the inner pressing ring and the middle frame by the inner pressing ring.

Abstract: One object of the present disclosure is to suppress or prevent a plating solution from entering a sealed space of a substrate holder and to detect entry of the plating solution promptly. There is provided a substrate holder configured to hold a substrate and cause the substrate to come into contact with a plating solution and to be plated.

Abstract: A system and method for automated single tank surface treatment, the system including a process tank, a manifold fluidly coupled to the process tank, a controller coupled to the manifold, and a plurality of holding tanks in fluid communication with the process tank via the manifold. The process tank may include a conductive support configured to hold a workpiece to be anodized and electrically coupled to a power supply source, and one or more cathodes electrically coupled to the power supply source, wherein the power supply source is configured to apply a voltage between the one or more cathodes and the workpiece via the conductive support. The system may also include a pH sensor, a temperature sensor, a cooling coil, a heating element, a level sensor, a vacuum outlet, a pressurized air inlet, and a pressure sensor.

Abstract: A polishing device for an indium phosphide substrate and a polishing process are provided, which belong to the technical field of polishing of indium phosphide.

Abstract: Cooling jacket devices of ingot puller apparatus used to prepare silicon ingots by the Czochralski method are disclosed. The cooling jacket device may include an inner shell that forms an inner chamber through which the ingot is pulled. The cooling jacket includes an outer shell. A plurality of tubes are disposed between the inner shell and outer shell. Each tube forms a cooling fluid passageway through which cooling fluid passes.

Abstract: A method for growing halide perovskite nanocrystals through in-situ chemical vapor deposition comprises the steps: grinding and mixing lead halide powder and cesium halide powder to obtain a solid-phase precursor; mixing the solid-phase precursor with the mesoporous molecular sieve; heating the mixed powder in a nitrogen atmosphere, such that the solid-phase precursor is sublimated into a gaseous state and is adsorbed into the pore channels of the mesoporous molecular sieve; and lowering the temperature, such that the gas-phase lead, the cesium, and the halogen atom react in-situ in the pore channels of the molecular sieve to form the halide perovskite nanocrystal. The fluorescence quantum yield of the CsPbBr3 nanocrystal is improved to 90% or higher by passivating its surface defects with Cs4PbBr6, thereby enhancing its luminescence properties. Meanwhile, halide perovskite nanocrystals with different luminescence colors are obtained by adjusting the types of halogen in lead halide and cesium halide.

Abstract: Embodiments of the present disclosure generally relate to methods, systems, and apparatus for forming layers having single crystalline structures. In one implementation, a method of processing substrates includes positioning a substrate in a processing volume of a chamber, and heating the substrate to a substrate temperature that is 800 degrees Celsius or less. The method includes maintaining the processing volume at a pressure within a range of 1.0 Torr to 8.0 Torr, and flowing one or more silicon-containing gases and one or more diluent gases into the processing volume. The method includes reacting the one or more silicon-containing gases to form one or more reactants, and depositing the one or more reactants onto an exposed surface of the substrate to form one or more silicon-containing layers on the exposed surface. The one or more silicon-containing layers each having a single crystalline structure.

Abstract: A method includes performing an etch process, including supplying a first process gas and a second process gas onto a surface of a substrate on a substrate support within a processing volume of a processing chamber for a first time duration, wherein the first process gas comprises fluorine-containing gas, and the second process gas comprises nitrogen-containing gas, and performing an anneal process to sublimate by-products formed on the surface of the substrate during the etch process, and supplying the first process gas without supplying the second process gas into the processing volume of the processing chamber for a second time duration.

Abstract: The present disclosure discloses a crystal puller, a method for manufacturing a monocrystalline silicon ingot and a mono-crystalline silicon ingot. The crystal puller includes a pulling mechanism; a first heat treater which is configured to perform heat treatment on the mono-crystalline silicon ingot with a first heat treatment temperature at which BMD in the mono-crystalline silicon ingot be ablated; and a second heat treater which is configured to perform heat treatment on the monocrystalline silicon ingot with a second heat treatment temperature at which formation of BMD in the mono-crystalline silicon ingot is induced. The pulling mechanism is further configured to move the monocrystalline ingot along the direction of crystal growth to a position where heat treatment is performed on a tail section by the first heat treater and heat treatment is performed on a head section by the second heat treater.