Abstract: An embodiment includes a metal interconnect structure, comprising: a dielectric layer disposed on a substrate; an opening in the dielectric layer, wherein the opening has sidewalls and exposes a conductive region of at least one of the substrate and an interconnect line; an adhesive layer, comprising manganese, disposed over the conductive region and on the sidewalls; and a fill material, comprising cobalt, within the opening and on a surface of the adhesion layer. Other embodiments are described herein.

Abstract: A nickel solution for forming a film that can suppress generation of hydrogen gas between a solid electrolyte membrane and a substrate while the solid electrolyte membrane and the substrate are brought into contact with each other. The pH of the nickel solution for forming a film is in the range of 4.2 to 6.1. The nickel solution for forming a film further contains a pH buffer solution that has a buffer function in the range of the pH and does not form insoluble salts or complexes with the nickel ions during formation of the film.

Abstract: The present invention provides an electroless nickel plating solution supplying high flexibility to a plated layer and having improved stability. The electroless nickel plating solution according to an embodiment of the present invention is an electroless nickel plating layer using an electroless nickel plating method. The electroless nickel plating solution comprises: a nickel metal salt providing a nickel ion for plating, and containing sulfamic acid nickel; a reducer reducing the nickel ion for plating; a complexing agent forming a complex together with the nickel ion for plating; and a cyan-based stabilizer providing stability of the electroless plating solution and preventing the generation of pits in a flexible nickel plated layer.

Abstract: The invention relates to a substrate having at least one main surface comprising at least one non-noble metallic bonding landing pad covered by a capping layer thereby shielding the non-noble metallic bonding landing pad from the environment. This capping layer comprises an alloy, the alloy being NiB or CoB and containing an atomic concentration percentage of boron in the range of 10% to 50%.

Abstract: A method for producing metal catalyst nanoparticles with a predetermined and/or narrow particle size distribution, and/or a predetermined size, wherein the method comprising a first quenching step and a second quenching step, which may, at least in part, determine the obtained metal catalyst nanoparticles' particle size distribution and/or size.

Abstract: Disclosed herein are systems and methods for electroplating nickel which employ substantially sulfur-free nickel anodes. The methods may include placing a semiconductor substrate in a cathode chamber of an electroplating cell having an anode chamber containing a substantially sulfur-free nickel anode, contacting an electrolyte solution having reduced oxygen concentration with the substantially sulfur-free nickel anode contained in the anode chamber, and electroplating nickel from the electrolyte solution onto the semiconductor substrate placed in the cathode chamber. The electroplating systems may include an electroplating cell having an anode chamber configured for holding a substantially sulfur-free nickel anode, a cathode chamber, and a substrate holder within the cathode chamber configured for holding a semiconductor substrate. The systems may also include an oxygen removal device arranged to reduce oxygen concentration in the electrolyte solution as it is flowed to the anode chamber.

Abstract: An adsorption-desorption material, in particular, crosslinked organo-amine polymeric materials having a weight average molecular weight of from about 500 to about 1×106, a total pore volume of from about 0.2 cubic centimeters per gram (cc/g) to about 2.0 cc/g, and an adsorption capacity of at least about 0.2 millimoles of CO2 adsorbed per gram of adsorption-desorption material, and linear organo-amine polymeric materials having a weight average molecular weight of from about 160 to about 1×106, a total pore volume of from about 0.2 cubic centimeters per gram (cc/g) to about 2.0 cc/g, and an adsorption capacity of at least about 0.2 millimoles of CO2 adsorbed per gram of adsorption-desorption material. This disclosure also relates in part to processes for preparing the crosslinked organo-amine materials and linear organo-amine materials.

Abstract: The present invention is directed, at least in part, to a process for improving the efficiency of a photocatalyst (a semiconductor photocatalyst) by tethering (depositing) a metal (e.g., metal ions of a late transition metal, such as nickel) to the semiconductor (photocatalyst) surface through the use of an organic ligand. More specifically, 1,2-ethanedithiol (EDT) functions as an excellent molecular linker (organic ligand) to attach a transition metal complex (e.g., nickel (Ni2+ ions)) to the semiconductor surface, which can be in the form of a cadmium sulfide surface. The photocatalyst has particular utility in generating hydrogen from H2S.

Abstract: An adsorption-desorption material, in particular, crosslinked organo-amine polymeric materials having a weight average molecular weight of from about 500 to about 1×106, a total pore volume of from about 0.2 cubic centimeters per gram (cc/g) to about 2.0 cc/g, and an adsorption capacity of at least about 0.2 millimoles of CO2 adsorbed per gram of adsorption-desorption material, and linear organo-amine polymeric materials having a weight average molecular weight of from about 160 to about 1×106, a total pore volume of from about 0.2 cubic centimeters per gram (cc/g) to about 2.0 cc/g, and an adsorption capacity of at least about 0.2 millimoles of CO2 adsorbed per gram of adsorption-desorption material. This disclosure also relates in part to processes for preparing the crosslinked organo-amine materials and linear organo-amine materials.

Abstract: An adsorption-desorption material, in particular, crosslinked organo-amine polymeric materials having a weight average molecular weight of from about 500 to about 1×106, a total pore volume of from about 0.2 cubic centimeters per gram (cc/g) to about 2.0 cc/g, and an adsorption capacity of at least about 0.2 millimoles of CO2 adsorbed per gram of adsorption-desorption material, and linear organo-amine polymeric materials having a weight average molecular weight of from about 160 to about 1×106, a total pore volume of from about 0.2 cubic centimeters per gram (cc/g) to about 2.0 cc/g, and an adsorption capacity of at least about 0.2 millimoles of CO2 adsorbed per gram of adsorption-desorption material. This disclosure also relates in part to processes for preparing the crosslinked organo-amine materials and linear organo-amine materials.

Abstract: Provided are robust paint coating systems on metal-coated plastic substrates and processes for forming such material systems as decorative components. An organometallic adhesion promoter is applied to a metal-coated plastic substrate. The metal coating comprises chromium (Cr), nickel (Ni) or combinations thereof. The organometallic adhesion promoter comprises (i) a transition metal selected from the group consisting of: zirconium (Zr), titanium (Ti), chromium (Cr), and combinations thereof, (ii) a first ligand complexed to the transition metal comprising an organofunctional group, and (iii) a second ligand complexed to the transition metal having a hydrolysable functional group. Then, one or more organic paint precursor materials are applied thereon.

Abstract: The present invention relates to aqueous plating bath compositions for deposition of nickel and nickel alloys utilizing novel stabilising agents possessing a carbon-carbon triple bond and a functional group to enhance the bath performance.

Abstract: The present invention relates to aqueous, alkaline plating bath compositions for electroless deposition of ternary and quaternary cobalt alloys Co-M-P, Co-M-B and Co-M-B—P, wherein M is selected from the group consisting of Mn, Zr, Re, Mo, Ta and W which comprise a propargyl derivative as the stabilizing agent. The cobalt alloy layers derived there from are useful as barrier layers and cap layers in electronic devices such as semiconducting devices, printed circuit boards, and IC substrates.

Abstract: Disclosed are various methods, kits, and compositions in the field of electroless nickel plating and chemical polishing. An electroless nickel plating composition may include a surfactant-brightener; a coupler; a bismuth metallic stabilizer; and organosulfur stabilizer and a bismuth complexer. Prior to plating, a substrate may be polished with a polishing composition that includes a surface blocker and a surface leveler. When practiced in accordance with the preferred teachings described herein, the electroless nickel plating composition is capable of providing a mirror-bright, lustrous finish, and has good leveling properties. The composition may be made without lead or cadmium.

Abstract: An electroless plating bath composition for plating particulate matter is provided. The plating bath composition includes a metal-containing component and a reducing component. The particulate matter is plated with at least one metal layer including at least two metals by electroless metal deposition in order to provide cutting and grinding tools with improved wear resistance.

Abstract: The present invention relates to an aqueous plating bath composition for depositing a nickel phosphorous alloy having a phosphorous content in the range of 5 to 12 wt. %. The plating bath comprises a sulfur-containing organic stabilizing agent.

Abstract: An aqueous solution containing divalent iron ions having improved storage stability such that the oxidation over time of divalent iron ions in the aqueous solution containing divalent iron ions to trivalent iron ions is suppressed and the occurrence of the precipitation of iron (III) hydroxide is prevented for long periods. The aqueous solution contains divalent iron ions having improved storage stability characterized in that it contains divalent iron ions and a hydroxylamine salt as a reducing agent and has a pH of 3.0 or lower. The pH is preferably 2.2 or lower and more preferably 1.2 or lower.

Abstract: The invention relates to an acidic, aqueous, chromium-free composition (A) for the anti-corrosive treatment of steel and/or galvanized steel surfaces comprising metal ions (M) selected from ions at least of the elements nickel, cobalt, molybdenum, iron or tin and a multi-stage method applying the composition (A) for the anti-corrosive pre-treatment of metal components which have steel and/or galvanized steel surfaces. The invention further relates to metal surfaces of zinc or iron having a passive layer system comprising at least 30 mg/m2 nickel and at least 10 mg/m2 zircon, titanium and/or hafnium and sulfur, wherein nickel is present in metallic form at up to at least 30 At. %, obtainable in a method according to the invention.

Abstract: A surface treatment solution for autodeposition coating treatment of a metallic material, which is an aqueous solution comprising at least one tannin, at least one crosslinking agent having a crosslinking group capable of thermosetting reaction with a phenolic hydroxyl group and/or a phenolic nucleus, ferric ions, soluble type elemental fluorine, and an oxidizing agent, wherein the solids mass concentration ratio of the tannin to the crosslinking agent is in the range of from 1:1 to 1:10, the molar concentration of the soluble type elemental fluorine is at least 3-fold the molar concentration of the ferric ions, and the pH of the solution is from 2 to 6.

Abstract: One aspect of the present invention is a deposition solution to deposit metals and metal alloys such as for fabrication of electronic devices. According to one embodiment, the deposition solution comprises metal ions and a pH adjustor. The pH adjustor comprises a functional group having a general formula (R1R2N)(R3R4N)C?N—R5 where: N is nitrogen; C is carbon; and R1, R2, R3, R4, and R5 are the same or different and represent hydrogen, alkyl group, aryl group, or alkylaryl group. Another aspect of the presented invention is a method of preparing deposition solutions. Still another aspect of the present invention is a method of fabricating electronic devices.

Abstract: Compositions and methods for forming metal films on semiconductor substrates are disclosed. One of the disclosed methods comprises: heating the semiconductor substrate to obtain a heated semiconductor substrate; exposing the heated semiconductor substrate to a composition containing at least one metal precursor comprising at least one ligand, an excess amount of neutral labile ligands, a supercritical solvent, and optionally at least one source of B, C, N, Si, P, and mixtures thereof; exposing the composition to a reducing agent and/or thermal energy at or near the heated semiconductor substrate; disassociating the at least one ligand from the metal precursor; and forming the metal film while minimizing formation of metal oxides.

Abstract: Compositions and methods for depositing elemental metal M(0) films on semiconductor substrates are disclosed. One of the disclosed methods comprises: heating the semiconductor substrate to obtain a heated semiconductor substrate; exposing the heated semiconductor substrate to a composition containing a metal precursor, an excess amount of neutral labile ligands, and a supercritical solvent; exposing the metal precursor to a reducing agent and/or thermal energy at or near the heated semiconductor substrate; reducing the metal precursor to the elemental metal M(0) by using the reducing agent and/or the thermal energy; and depositing the elemental metal M(0) film while minimizing formation of metal oxides.

Abstract: An aqueous nickel phosphorus tin alloy electroless plating bath and process for depositing a nickel phosphorus tin alloy onto a substrate, particularly an aluminum substrate for memory disk applications, wherein the nickel phosphorus tin alloy deposit provides enhanced thermal stability, as defined by the inhibition of crystallization and suppression of magnetization upon high temperature annealing when compared to typical NiP deposits.

Abstract: The invention relates to a treatment solution for producing substantially chromium(VI) free black conversion layers on alloy layers containing zinc, the solution comprising the following: (i) at least one first carboxylic acid having 1 to 8 carbon atoms, the acid containing no polar groups with exception of the carboxyl group and being a monocarboxylic acid, (ii) at least one second carboxylic acid having 1 to 8 carbon atoms, comprising at least one further polar group that is selected from —OH, —SO3H, —NH2, —NHR, —NR2, —NR3+, and —COOH (wherein R is a C1-C6 alkyl group), (iii) 20 to 400 mmol/l Cr3+ and (iv) 50 to 2000 mmol/l NO3?. The invention further provides a method for the black passivation of surfaces containing zinc, wherein the surface to be treated is immersed into such a treatment solution.

Abstract: The invention relates to a coating composition for diesel oxidation catalysts or a combination of diesel oxidation catalysts and diesel particle filters, said coating composition comprising a combination of a noble metal on a metal oxide, with the exception of cerium oxide, and a zeolite doped with iron. The invention also relates to a catalyst provided with the coating according to the invention, and to a method for treating the exhaust gas of diesel internal combustion engines.

Abstract: One embodiment of the present invention is a method of electroless deposition of cap layers for fabricating an integrated circuit. The method includes controlling the composition of an electroless deposition bath so as to substantially maintain the electroless deposition properties of the bath. Other embodiments of the present invention include electroless deposition solutions. Still another embodiment of the present invention is a composition used to recondition an electroless deposition bath.

Abstract: The present invention provides compositions and processes for preparing metallic ions for deposition on and/or into conductive substrates, such as metals, to substantially eliminate friction from metal to metal contact. It is used in the aqueous embodiment to form new metal surfaces on all metal substrates. The processes form stable aqueous solutions of metal and metalloid ions that can be adsorbed or absorbed on and/or into conductive substrates. The aqueous solutions consist of ammonium alkali metal phosphate salts, and/or ammonium alkali metal sulfate salts mixed with a water soluble metal or metalloid salt from Group I through Group VIII of the periodic table of elements. The aqueous solutions allow for a nano deposition of the metal ions on and/or into the surfaces of conductive substrates. The surfaces created by the deposited metal ions will provide metal passivation and substantially eliminate friction in metal-to-metal contact without the use of hydrocarbon based lubricants.

Abstract: Embodiments as described herein provide methods for depositing a material on a substrate during electroless deposition processes, as well as compositions of the electroless deposition solutions. In one embodiment, the substrate contains a contact aperture having an exposed silicon contact surface. In another embodiment, the substrate contains a contact aperture having an exposed silicide contact surface. The apertures are filled with a metal contact material by exposing the substrate to an electroless deposition process. The metal contact material may contain a cobalt material, a nickel material, or alloys thereof. Prior to filling the apertures, the substrate may be exposed to a variety of pretreatment processes, such as preclean processes and activations processes. A preclean process may remove organic residues, native oxides, and other contaminants during a wet clean process or a plasma etch process. Embodiments of the process also provide the deposition of additional layers, such as a capping layer.

Abstract: Disclosed is an electroless nickel plating bath not containing harmful metal species. In the electroless nickel plating bath, there are contained at least an iron ion source and an iodide ion source. With the use of the electroless nickel plating bath containing at least the iron ion source and the iodide ion source, it is possible to suppress decomposition of the plating bath without using harmful metal species to stabilize the plating bath.

Abstract: The invention relates to a method for a preliminary metallizing treatment of galvanized or zinc alloy-coated steel surfaces or joined metallic parts that at least partly have zinc surfaces, in a surface treatment encompassing several process steps. In the disclosed method, metallic coats of especially a maximum of 100 mg/m2 of molybdenum, tungsten, cobalt, nickel, lead, tin, and/or preferably iron are produced on the treated zinc surfaces. Another embodiment of the invention relates to an uncoated or subsequently coated metallic part which has been subjected to the disclosed preliminary metallizing treatment as well as the use of such a part for making bodies during the production of automobiles, building ships, in the construction industry, and for manufacturing white products.

Abstract: The present invention relates to an electrolyte for the electroless deposition of a metal layer on a substrate, wherein the electrolyte is free of heavy metal stabilizers, cyanides, selenium compounds and sulfur compounds comprising sulfur in an oxidation state between ?2 and +5, and in which instead a ?-amino acid is used as stabilizer. In particular, the inventive electrolyte can comprise 3-aminopropionic acid, 3-aminobutyric acid, 3-amino-4-methylvaleric acid, and 2-aminoethane-sulfonic acid. Furthermore, the invention is directed to a method for the electroless deposition of metal layers utilizing an inventive electrolyte as well as the use of ?-amino acids as stabilizer in electrolytes for the electroless deposition of metal layers in general.

Abstract: An electrolytic composition for the deposition of a matt metal layer onto a substrate and deposition process where the composition comprises a source of metal from the group consisting of Cr, Mn, Fe, Co, Ni, Cu, Zn, Ru, Rh, Pd, Ag, In, Sn, Sb, Re, Pt, Au, Bi, and combinations thereof; a substituted or unsubstituted polyalkylene oxide or its derivative as an emulsion and/or dispersion former; and a compound comprising fluorated or perfluorated hydrophobic chains or which is a polyalkylene oxide substituted quaternary ammonium compound as wetting agent; wherein the electrolytic composition forms a microemulsion and/or dispersion.

Abstract: The invention is related to a composition destined to protect steels against corrosion by utilization of the steel's own rust as a passivating element, the rust being removed from the steel and/or being synthetically prepared and agglutinated with a resin, where the resin can have or cannot have as an electric conductivity promoter material an intrinsically conductor polymer (ICP), in this case polyaniline, in its conducting form (emeraldine salt) or non conducting (emeraldine base), besides filler(s) and a dispersant oil.

Abstract: An electroless nickel plating liquid capable of forming an underbarrier metal for metal bumps or solder bumps by electroless nickel plating with a uniform film thickness on silicon wafers composed of multiple IC chips contains a water-soluble nickel salt, a reducing agent, a complexing agent, and a pH buffer, wherein_lead ion is contained at 0.01-1 ppm, cobalt ion is contained at 0.01-1 ppm, and a sulfur compound is contained at 0.01-1 ppm.

Abstract: An object of the present invention is to provide an aqueous solution containing divalent iron ions having improved storage stability such that oxidation over time of divalent iron ions in the aqueous solution containing divalent iron ions to trivalent iron ions is suppressed and occurrence of the precipitation of iron (III) hydroxide is prevented for long periods. The present invention relates to an aqueous solution containing divalent iron ions having improved storage stability characterized in that it comprises divalent iron ions and a hydroxylamine salt as a reducing agent and has a pH of 3.0 or lower. The pH is preferably 2.2 or lower and more preferably 1.2 or lower.

Abstract: One aspect of the present invention is a deposition solution to deposit metals and metal alloys such as for fabrication of electronic devices. According to one embodiment, the deposition solution comprises metal ions and a pH adjustor. The pH adjustor comprises a functional group having a general formula (R1R2N)(R3R4N)C?N—R5 where: N is nitrogen; C is carbon; and R1, R2, R3, R4, and R5 are the same or different and represent hydrogen, alkyl group, aryl group, or alkylaryl group. Another aspect of the presented invention is a method of preparing deposition solutions. Still another aspect of the present invention is a method of fabricating electronic devices.

Abstract: Described is a new process for applying a metal coating to a non-conductive substrate comprising the steps of (a) contacting the substrate with an activator comprising a noble metal/group IVA metal sol to obtain a treated substrate, (b) contacting said treated substrate with a composition comprising a solution of: (i) a Cu(II), Ag, Au or Ni soluble metal salt or mixtures thereof, (ii) 0.05 to 5 mol/l of a group IA metal hydroxide and (iii) a complexing agent for an ion of the metal of said metal salt, wherein an iminosuccinic acid or a derivative thereof is used as said complexing agent.

Abstract: This invention is directed to a process for electrolessly metallizing an article, as well as to a plating bath and the subsequent plated substrate. The process comprises contacting the surface of an article with an electroless metallizing bath which may be essentially free of toxic and/or heavy metals.

Abstract: Disclosed is an electroless plating solution exhibiting a good plating metal filling performance even for larger trenches or vias of several to one hundred and tens of ?m, in a manner free from voids or seams, and allowing maintenance of stabilized performance for prolonged time. The electroless plating solution contains at least a water-soluble metal salt, a reducing agent for reducing metal ions derived from the water-soluble metal salt, and a chelating agent. In addition, the electroless plating solution contains a sulfur-based organic compound as a leveler having at least one aliphatic cyclic group or aromatic cyclic group to which may be linked at least one optional substituent. The aliphatic cyclic group or the aromatic cyclic group contains optional numbers of carbon atoms, oxygen atoms, phosphorus atoms, sulfur atoms and nitrogen atoms.

Abstract: Disclosed are metal plating compositions for plating a metal on a substrate. The metal plating compositions include compounds which influence the leveling and throwing performance of the metal plating compositions. Also disclosed are methods of depositing metals on a substrate.

Abstract: There is provided an electroless plating bath which makes it possible to form a diffusion barrier layer of a Re-based alloy, having a uniform thickness regardless of the shape and size of a workpiece, on the surface of a Ni-based alloy by a relatively simple method. The electroless plating bath for forming a Ni—Re—B alloy, containing not less than 50 at % of Re, on a substrate by electroless plating, has a pH of 6 to 8 and includes a metal supply source component containing Ni2+ and ReO4? at an equal equivalent in the range of 0.01 to 0.5 mol/L, a complexing agent component containing citric acid and at least one other organic acid, and a reducing agent component containing dimethylamine-borane.

Abstract: Disclosed are metal plating compositions and methods. The metal plating compositions provide good leveling performance and throwing power.

Abstract: The present invention is directed to the fabrication of rigid memory disks, including a metal plating composition which impedes deposition of non-metallic particles during a plating process. The plating composition includes at least one sulfated fatty acid ester additive, or mixtures or salts thereof, of formula: wherein R1 is selected from the group consisting of OH, OCH2, OCH2CH3, C1-C7 alkyl, linear or branched; R2 selected from H and C1-C7 alkyl, linear or branched; m=1 to about 5; n=2 to about 30; o=0 to about 10; M+ is a metal or pseudo metal ion or H+. The additive has a zeta potential which impedes deposit of non-metallic particles. The invention is further directed to a method for electroless plating utilizing the additive composition in a bath with at least a stabilizing agent, complexing agent and reducing agent and source of metal ions.

Abstract: Systems and methods for electroless deposition of a cobalt-alloy layer on a copper surface include a solution characterized by a low pH. This solution may include, for example, a cobalt(II) salt, a complexing agent including at least two amine groups, a pH adjuster configured to adjust the pH to below 7.0, and a reducing agent. In some embodiments, the cobalt-alloy is configured to facilitate bonding and copper diffusion characteristics between the copper surface and a dielectric in an integrated circuit.

Abstract: An electroless plating composition comprising succinic acid, potassium carbonate, a source of cobalt metal ions, a reducing agent, and water is provided. An optional buffering agent may also be included in the composition. The composition may be used to deposit cobalt metal in or on semiconductor substrate surfaces including vias, trenches, and interconnects.

Abstract: The present invention relates to the use of ternary nickel-containing metal alloys of the NiMR type (where M=Mo, W, Re or Cr, and R=B or P) deposited by an electroless process in semiconductor technology. In particular, the present invention relates to the use of these deposited ternary nickel-containing metal alloys as barrier material or as selective encapsulation material for preventing the diffusion and electromigration of copper in semiconductor components.

Abstract: Systems and methods for electroless deposition of a cobalt-alloy layer on a copper surface include a solution characterized by a low pH. This solution may include, for example, a cobalt(II) salt, a complexing agent including at least two amine groups, a pH adjuster configured to adjust the pH to below 7.0, and a reducing agent. In some embodiments, the cobalt-alloy is configured to facilitate bonding and copper diffusion characteristics between the copper surface and a dielectric in an integrated circuit.

Abstract: Systems and methods for electroless deposition of a cobalt-alloy layer on a copper surface include a solution characterized by a low pH. This solution may include, for example, a cobalt(II) salt, a complexing agent including at least two amine groups, a pH adjuster configured to adjust the pH to below 7.0, and a reducing agent. In some embodiments, the cobalt-alloy is configured to facilitate bonding and copper diffusion characteristics between the copper surface and a dielectric in an integrated circuit.

Abstract: Compositions and methods for forming metal films on semiconductor substrates are disclosed. One of the disclosed methods comprises: heating the semiconductor substrate to obtain a heated semiconductor substrate; exposing the heated semiconductor substrate to a composition containing at least one metal precursor comprising at least one ligand, an excess amount of neutral labile ligands, a supercritical solvent, and optionally at least one source of B, C, N, Si, P, and mixtures thereof; exposing the composition to a reducing agent and/or thermal energy at or near the heated semiconductor substrate; disassociating the at least one ligand from the metal precursor; and forming the metal film while minimizing formation of metal oxides.

Abstract: An electroless deposition chemical system includes an electroless solution including a metal component, and a strongly adsorbed species component having a concentration less than a concentration of the metal component.