Using An Energy Beam Or Field, A Particle Beam Or Field, Or A Plasma (e.g., Mbe) Patents (Class 117/108)
  • Patent number: 10898725
    Abstract: Embodiments of the invention are directed to an integrated optogenetic device. The integrated optogenetic includes a substrate layer having a first substrate region and a second substrate region. The device further includes a first contact formed over the substrate layer in the first substrate region and a second contact layer formed over the substrate layer in the second region. In addition, the device includes a light-emitting diode (LED) structure communicatively coupled to the first contact layer and a biosensor element communicatively coupled to the second contact layer. The first contact layer is configured to operate as a bottom contact that provides electrical contact to the LED structure. The first contact layer is further configured to be substantially lattice matched with the substrate layer and a bottom layer of the LED structure.
    Type: Grant
    Filed: November 26, 2018
    Date of Patent: January 26, 2021
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Steve Holmes, Stephen W. Bedell, Jia Chen, Hariklia Deligianni, Devendra K. Sadana
  • Patent number: 10838123
    Abstract: Nanostructured photonic materials, and associated components for use in devices and systems operating at ultraviolet (UV), extreme ultraviolet (EUV), and/or soft Xray wavelengths are described. Such a material may be fabricated with nanoscale features tailored for a selected wavelength range, such as at particular UV, EUV, or soft Xray wavelengths or wavelength ranges. Such a material may be used to make components such as mirrors, lenses or other optics, panels, lightsources, masks, photoresists, or other components for use in applications such as lithography, wafer patterning, astronomical and space applications, biomedical applications, biotech or other applications.
    Type: Grant
    Filed: November 25, 2015
    Date of Patent: November 17, 2020
    Inventor: Supriya Jaiswal
  • Patent number: 10612156
    Abstract: In various embodiments, growth of large, high-quality single crystals of aluminum nitride is enabled via a two-stage process utilizing two different crystalline seeds.
    Type: Grant
    Filed: July 17, 2019
    Date of Patent: April 7, 2020
    Assignee: Crystal IS, Inc.
    Inventors: Leo J. Schowalter, Robert T. Bondokov, James R. Grandusky
  • Patent number: 10538844
    Abstract: Methods and systems for direct lithographic pattern definition based upon electron beam induced alteration of the surface chemistry of a substrate are described. The methods involve an initial chemical treatment for global definition of a specified surface chemistry (SC). Electron beam induced surface reactions between a gaseous precursor and the surface are then used to locally alter the SC. High resolution patterning of stable, specified surface chemistries upon a substrate can thus be achieved. The defined patterns can then be utilized for selective material deposition via methods which exploit the specificity of certain SC combinations or by differences in surface energy. It is possible to perform all steps in-situ without breaking vacuum.
    Type: Grant
    Filed: September 11, 2015
    Date of Patent: January 21, 2020
    Assignee: FEI Company
    Inventors: James Bishop, Toan Trong Tran, Igor Aharonovich, Charlene Lobo, Milos Toth
  • Patent number: 10529290
    Abstract: A display device includes a light source device, and a color converter optically coupled with the light source device. An array of regions of the light source device is configured to emit light of a first color. The color converter includes an array of color conversion regions including color conversion regions of a first type and of a second type. The color conversion regions of the first type are configured to convert the light of the first color into light of a second color. The color conversion regions of the second type are configured to convert the light of the first color into light of a third. A respective color conversion region of the array of color conversion regions includes a respective photonic crystal structure defining a respective two-dimensional pattern including one or more induced defects, and a color conversion matrix that includes color converting nanoparticles.
    Type: Grant
    Filed: February 27, 2018
    Date of Patent: January 7, 2020
    Assignee: Facebook Technologies, LLC
    Inventors: Maxwell Parsons, Chloe Astrid Marie Fabien, Ningfeng Huang, Gareth Valentine, James Ronald Bonar
  • Patent number: 10340052
    Abstract: A single cell apparatus and method for single ion addressing are described herein. One apparatus includes a single cell configured to set a frequency, intensity, and a polarization of a laser, shutter the laser, align the shuttered laser to an ion in an ion trap such that the ion fluoresces light and/or performs a quantum operation, and detect the light fluoresced from the ion.
    Type: Grant
    Filed: July 10, 2017
    Date of Patent: July 2, 2019
    Assignee: Honeywell International Inc.
    Inventors: Matthew E. L. Jungwirth, James Edward Goeders
  • Patent number: 10329688
    Abstract: An effusion cell includes a crucible for containing material to be evaporated or sublimated, a delivery tube configured to deliver evaporated or sublimated material originating from the crucible into a chamber, a supply tube extending from the crucible, the supply tube located and configured to trap condensate originating from the evaporated or sublimated material and to deliver the condensate back to the crucible, and at least one heating element located and configured to heat material in the crucible so as to cause evaporation or sublimation of the material and flow of the evaporated or sublimated material through the delivery tube and out from the effusion cell. The effusion cell is configured such that the crucible can be filled with the material to be evaporated or sublimated without removing the effusion cell from the process vacuum chamber. Semiconductor substrate processing systems may include such effusion cells.
    Type: Grant
    Filed: April 24, 2017
    Date of Patent: June 25, 2019
    Assignee: Innovative Advanced Materials, Inc.
    Inventor: William Alan Doolittle
  • Patent number: 10240631
    Abstract: Embodiments disclosed herein relate to bearing apparatuses including a bearing assembly having a continuous superhard bearing element including a continuous superhard bearing surface and a tilting pad bearing assembly. The disclosed bearing apparatuses may be employed in pumps, turbines or other mechanical systems. In an embodiment, the bearing apparatus includes a first and second bearing assembly. The first bearing assembly includes a first support ring and a plurality of tilting pads. Each tilting pad is tilted and/or tiltably secured relative to the first support ring. The second bearing assembly includes a continuous superhard bearing element. The continuous superhard bearing element includes a continuous superhard bearing surface facing the plurality of tilting pads and exhibits a maximum lateral width greater than about 2 inches.
    Type: Grant
    Filed: November 24, 2015
    Date of Patent: March 26, 2019
    Assignees: US SYNTHETIC CORPORATION, WAUKESHA BEARINGS CORPORATION
    Inventors: Jair J. Gonzalez, Leonidas C. Leite, Sriram Venkatesan
  • Patent number: 10145792
    Abstract: A multi-cell apparatus and method for single ion addressing are described herein. One apparatus includes a first cell configured to set a frequency, intensity, and a polarization of a laser and shutter the laser, a second cell configured to align the shuttered laser to an ion in an ion trap such that the ion fluoresces light and/or performs a quantum operation, and a third cell configured to detect the light fluoresced from the ion.
    Type: Grant
    Filed: January 23, 2017
    Date of Patent: December 4, 2018
    Assignee: Honeywell International Inc.
    Inventors: Matthew Edward Lewis Jungwirth, James Goeders
  • Patent number: 10099290
    Abstract: A hybrid additive manufacturing method comprises building an additive structure on a pre-sintered preform base, wherein building the additive structure comprises iteratively fusing together a plurality of layers of additive material with at least a first layer of additive material joined to the pre-sintered preform base, and wherein the pre-sintered preform base comprises an initial shape. The hybrid additive manufacturing method further comprises modifying the initial shape of the pre-sintered preform base comprising the additive structure into a modified shape comprising the additive structure, and, joining the pre-sintered preform base in its modified shape to a component.
    Type: Grant
    Filed: December 18, 2014
    Date of Patent: October 16, 2018
    Assignee: General Electric Company
    Inventors: Benjamin Paul Lacy, Srikanth Chandrudu Kottilingam, David Edward Schick
  • Patent number: 9899570
    Abstract: There is provided a semiconductor multilayer structure, including: an n-type GaN layer; and a p-type GaN layer which is formed on the n-type GaN layer and into which Mg is ion-implanted, and generating an electroluminescence emission having a peak at a photon energy of 3.0 eV or more, by applying a voltage to a pn-junction formed by the n-type GaN layer and the p-type GaN layer.
    Type: Grant
    Filed: June 5, 2015
    Date of Patent: February 20, 2018
    Assignee: SUMITOMO CHEMICAL COMPANY, LIMITED
    Inventors: Naoki Kaneda, Tomoyoshi Mishima, Tohru Nakamura
  • Patent number: 9803869
    Abstract: The present invention relates to a gas-turbine combustion chamber having a head plate as well as an outer and an inner combustion chamber wall, wherein the combustion chamber is formed by segments or partial segments manufactured in one piece by means of a DLD method and welded to one another.
    Type: Grant
    Filed: March 9, 2015
    Date of Patent: October 31, 2017
    Assignee: Rolls-Royce Deutschland Ltd & Co KG
    Inventors: Carsten Clemen, Miklós Gerendás, Michael Ebel, Stefan Penz
  • Patent number: 9715950
    Abstract: A single cell apparatus and method for single ion addressing are described herein. One apparatus includes a single cell configured to set a frequency, intensity, and a polarization of a laser, shutter the laser, align the shuttered laser to an ion in an ion trap such that the ion fluoresces light and/or performs a quantum operation, and detect the light fluoresced from the ion.
    Type: Grant
    Filed: April 14, 2015
    Date of Patent: July 25, 2017
    Assignee: Honeywell International Inc.
    Inventors: Matthew Edward Lewis Jungwirth, James Goeders
  • Patent number: 9644286
    Abstract: A silicon carbide single crystal manufacturing apparatus includes a vacuum chamber, a pedestal on which a seed crystal is disposed, an inlet of source gas, a reaction chamber extending from a bottom surface of the vacuum chamber toward the pedestal, a first heating device disposed around an outer periphery of the reaction chamber, a second heating device disposed around an outer periphery of the pedestal, and an outlet disposed outside the first and second heating devices in the vacuum chamber. After the source gas supplied from the reaction chamber is supplied toward the pedestal, the source gas is let flow outward in a radial direction of the silicon carbide single crystal between the reaction chamber and the silicon carbide single crystal and is discharged through the outlet.
    Type: Grant
    Filed: July 24, 2012
    Date of Patent: May 9, 2017
    Assignee: DENSO CORPORATION
    Inventor: Kazukuni Hara
  • Patent number: 9588047
    Abstract: A multi-cell apparatus and method for single ion addressing are described herein. One apparatus includes a first cell configured to set a frequency, intensity, and a polarization of a laser and shutter the laser, a second cell configured to align the shuttered laser to an ion in an ion trap such that the ion fluoresces light and/or performs a quantum operation, and a third cell configured to detect the light fluoresced from the ion.
    Type: Grant
    Filed: April 14, 2015
    Date of Patent: March 7, 2017
    Assignee: Honeywell International Inc.
    Inventors: Matthew Edward Lewis Jungwirth, James Goeders
  • Patent number: 9377918
    Abstract: A method of forming patterns in coatings on opposite sides of a transparent substrate by direct write laser patterning comprising the steps: a) providing a first transparent coating on a first side of the substrate, the first coating being formed of a material having a relatively high laser ablation threshold energy density; b) mounting the substrate on a stage or locating the substrate on a chuck, c) using a first laser beam to form a first pattern in the first transparent coating by laser ablation; d) providing a second transparent coating on the second side of the substrate after formation of said first pattern, the second coating being formed of a material having a relatively low laser ablation or modification threshold energy density; using a second laser beam to form a second pattern in the second transparent coating by laser ablation or modification, the energy density of the second laser beam being lower than that of the first laser beam such that ablation of the second transparent coating is carried
    Type: Grant
    Filed: January 9, 2014
    Date of Patent: June 28, 2016
    Assignee: M-SOLV LIMITED
    Inventor: Yuk Kwan Chan
  • Patent number: 9209427
    Abstract: In this embodiment, an interval distance between a deposition source holder 17 and an object on which deposition is performed (substrate 13) is reduced to 30 cm or less, preferably 20 cm or less, more preferably 5 to 15 cm, and a deposition source holder 17 is moved in an X direction or a Y direction in accordance with an insulator (also called a bank or a barrier) in deposition, and a shutter 15 is opened or closed to form a film. The present invention can cope with an increase in size of a deposition apparatus with a further increase in size of a substrate in the future.
    Type: Grant
    Filed: December 20, 2012
    Date of Patent: December 8, 2015
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Masakazu Murakami
  • Patent number: 9202731
    Abstract: Disclosed is a liquid processing apparatus that processes a substrate with a processing liquid. The processing apparatus includes: a substrate holder configured to hold the substrate; a processing liquid supply unit configured to supply the processing liquid to the substrate held by the substrate holder; a rinsing liquid supply unit configured to supply a rinsing liquid to the substrate; and a light emitting element configured to emit light of a wavelength range, which is absorbed only by the substrate, and irradiate the emitted light to the substrate.
    Type: Grant
    Filed: December 22, 2011
    Date of Patent: December 1, 2015
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Shigeru Kasai, Ayuta Suzuki, Ikuo Sawada, Naoki Shindo, Masatake Yoneda, Kazuhiro Ooya
  • Patent number: 9171912
    Abstract: A p-type group II-VI semiconductor may include a group IV element as a dopant. The group II-IV semiconductor may be Zn1-a-b-cMgaCdbBecO1-p-qSpSeq, wherein a=0˜1, b=0˜1, c=0˜1, p=0˜1 and q=0˜1.
    Type: Grant
    Filed: November 11, 2010
    Date of Patent: October 27, 2015
    Assignee: ZN TECHNOLOGY, INC.
    Inventors: Jizhi Zhang, Jin Joo Song
  • Patent number: 9034104
    Abstract: A larger substrate can be used, and a transistor having a desirably high field-effect mobility can be manufactured through formation of an oxide semiconductor layer having a high degree of crystallinity, whereby a large-sized display device, a high-performance semiconductor device, or the like can be put into practical use. A single-component oxide semiconductor layer is formed over a substrate; then, crystal growth is carried out from a surface to an inside by performing heat treatment at 500° C. to 1000° C. inclusive, preferably 550° C. to 750° C. inclusive so that a single-component oxide semiconductor layer including single crystal regions is formed; and a multi-component oxide semiconductor layer including single crystal regions is stacked over the single-component oxide semiconductor layer including single crystal regions.
    Type: Grant
    Filed: December 15, 2010
    Date of Patent: May 19, 2015
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Takuya Hirohashi, Masahiro Takahashi, Takashi Shimazu
  • Publication number: 20150118572
    Abstract: The present disclosure generally provides for a solid-state battery, and methods of fabricating embodiments of the solid-state battery. Embodiments of the present disclosure may include an electrode for a solid-state battery, the electrode including: a current collector region including a conductive, lithium electroactive material; and a plurality of nanowires contacting the current collector region.
    Type: Application
    Filed: October 29, 2013
    Publication date: April 30, 2015
    Applicant: BATTERY ENERGY STORAGE SYSTEMS-TECHNOLOGIES
    Inventors: Isaac Lund, Fernando Gomez-Baquero, Bruce Toyama
  • Patent number: 8945302
    Abstract: Method for crystal growth from a surfactant of a metal-nonmetal (MN) compound, including the procedures of providing a seed crystal, introducing atoms of a first metal to the seed crystal thus forming a thin liquid metal wetting layer on a surface of the seed crystal, setting a temperature of the seed crystal below a minimal temperature required for dissolving MN molecules in the wetting layer and above a melting point of the first metal, each one of the MN molecules being formed from an atom of a second metal and an atom of a first nonmetal, introducing the MN molecules which form an MN surfactant monolayer, thereby facilitating a formation of the wetting layer between the MN surfactant monolayer and the surface of the seed crystal, and regulating a thickness of the wetting layer, thereby growing an epitaxial layer of the MN compound on the seed crystal.
    Type: Grant
    Filed: March 4, 2012
    Date of Patent: February 3, 2015
    Assignee: Mosaic Crystals Ltd.
    Inventor: Moshe Einav
  • Patent number: 8945305
    Abstract: Methods for depositing a material, such as a metal or a transition metal oxide, using an ALD (atomic layer deposition) process and resulting structures are disclosed. Such methods include treating a surface of a semiconductor structure periodically throughout the ALD process to regenerate a blocking material or to coat a blocking material that enables selective deposition of the material on a surface of a substrate. The surface treatment may reactivate a surface of the substrate toward the blocking material, may restore the blocking material after degradation occurs during the ALD process, and/or may coat the blocking material to prevent further degradation during the ALD process. For example, the surface treatment may be applied after performing one or more ALD cycles. Accordingly, the presently disclosed methods enable in situ restoration of blocking materials in ALD process that are generally incompatible with the blocking material and also enables selective deposition in recessed structures.
    Type: Grant
    Filed: August 31, 2010
    Date of Patent: February 3, 2015
    Assignee: Micron Technology, Inc.
    Inventor: Eugene P. Marsh
  • Patent number: 8945304
    Abstract: A system and method A method of growing an elongate nanoelement from a growth surface includes: a) cleaning a growth surface on a base element; b) providing an ultrahigh vacuum reaction environment over the cleaned growth surface; c) generating a reactive gas of an atomic material to be used in forming the nanoelement; d) projecting a stream of the reactive gas at the growth surface within the reactive environment while maintaining a vacuum of at most 1×10?4 Pascal; e) growing the elongate nanoelement from the growth surface within the environment while maintaining the pressure of step c); f) after a desired length of nanoelement is attained within the environment, stopping direction of reactive gas into the environment; and g) returning the environment to an ultrahigh vacuum condition.
    Type: Grant
    Filed: August 13, 2008
    Date of Patent: February 3, 2015
    Assignee: The Board of Regents of the Nevada System of Higher Education on behalf of the University of Nevada, Las Vegas University of Nevada
    Inventors: Biswajit Das, Myung B. Lee
  • Patent number: 8937332
    Abstract: A wavelength converter for an LED is described that comprises a substrate of monocrystalline garnet having a cubic crystal structure, a first lattice parameter and an oriented crystal face. An epitaxial layer is formed directly on the oriented crystal face of the substrate. The layer is comprised of a monocrystalline garnet phosphor having a cubic crystal structure and a second lattice parameter that is different from the first lattice parameter wherein the difference between the first lattice parameter and the second lattice parameter results in a lattice mismatch within a range of ±15%. The strain induced in the phosphor layer by the lattice mismatch shifts the emission of the phosphor to longer wavelengths when a tensile strain is induced and to shorter wavelengths when a compressive strain is induced. Preferably, the wavelength converter is mounted on the light emitting surface of a blue LED to produce an LED light source.
    Type: Grant
    Filed: January 31, 2012
    Date of Patent: January 20, 2015
    Assignee: OSRAM SYLVANIA Inc.
    Inventors: Darshan Kundaliya, Madis Raukas, Adam M. Scotch, David Hamby, Kailash Mishra, Matthew Stough
  • Patent number: 8936681
    Abstract: A method for making an epitaxial structure is provided. The method includes the following steps. A substrate is provided. The substrate has an epitaxial growth surface for growing epitaxial layer. A carbon nanotube layer is placed on the epitaxial growth surface. An epitaxial layer is epitaxially grown on the epitaxial growth surface. The carbon nanotube layer is removed. The carbon nanotube layer can be removed by heating.
    Type: Grant
    Filed: October 18, 2011
    Date of Patent: January 20, 2015
    Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.
    Inventors: Yang Wei, Shou-Shan Fan
  • Publication number: 20150014676
    Abstract: A method of growing III-N material on a silicon substrate includes the steps of epitaxially growing a single crystal rare earth oxide on a silicon substrate, epitaxially growing a single crystal rare earth nitride on the single crystal rare earth oxide, and epitaxially growing a layer of single crystal III-N material on the single crystal rare earth nitride.
    Type: Application
    Filed: July 11, 2013
    Publication date: January 15, 2015
    Inventors: Rytis Dargis, Robin Smith, Andrew CLark, Erdem Arkun, Michael Lebby
  • Publication number: 20150004435
    Abstract: The present invention relates to a method for growing a non-polar m-plane epitaxial layer on a single crystal oxide substrate, which comprises the following steps: providing a single crystal oxide with a perovskite structure; using a plane of the single crystal oxide as a substrate; and forming an m-plane epitaxial layer of wurtzite semiconductors on the plane of the single crystal oxide by a vapor deposition process, wherein the non-polar m-plane epitaxial layer may be GaN, or III-nitrides. The present invention also provides an epitaxial layer having an m-plane obtained according to the aforementioned method.
    Type: Application
    Filed: July 2, 2014
    Publication date: January 1, 2015
    Inventors: Li CHANG, Yen-Teng HO
  • Patent number: 8900362
    Abstract: A method of growing a single crystal of gallium oxide at a lower temperature than the melting point (1900° C.) of gallium oxide is provided. A compound film (hereinafter referred to as “gallium oxide compound film”) containing Ga atoms, O atoms, and atoms or molecules that easily sublimate, is heated to sublimate the atoms or molecules that easily sublimate from inside the gallium oxide compound film, thereby growing a single crystal of gallium oxide with a heat energy that is lower than a binding energy of gallium oxide.
    Type: Grant
    Filed: March 8, 2011
    Date of Patent: December 2, 2014
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Akiharu Miyanaga, Tatsuya Honda, Takatsugu Omata, Yusuke Nonaka
  • Publication number: 20140338589
    Abstract: Dislocation pile-ups in compositionally graded semiconductor layers are reduced or eliminated, thereby leading to increased semiconductor device yield and manufacturability. This is accomplished by introducing a semiconductor layer having a plurality of threading dislocations distributed substantially uniformly across its surface as a starting layer and/or at least one intermediate layer during growth and relaxation of the compositionally graded layer. The semiconductor layer may include a seed layer disposed proximal to the surface of the semiconductor layer and having the threading dislocations uniformly distributed therein.
    Type: Application
    Filed: July 30, 2014
    Publication date: November 20, 2014
    Inventors: Christopher Leitz, Christopher J. Vineis, Richard Westhoff, Vicky Yang, Matthew T. Currie
  • Publication number: 20140331919
    Abstract: A Ga2O3 crystal film is epitaxially grown on a Ga2O3 crystal substrate using an MBE method, while controlling the n-type conductivity with high accuracy. Provided is a method for producing a Ga2O3 crystal film, wherein a conductive Ga2O3 crystal film is formed by epitaxial growth using an MBE method. This method for producing a Ga2O3 crystal film comprises a step wherein a Ga2O3 single crystal film containing Sn is grown by producing a Ga vapor and an Sn vapor and supplying the Ga vapor and the Sn vapor to the surface of a Ga2O3 crystal substrate as molecular beams The Sn vapor is produced by heating Sn oxide that is filled in a cell of an MBE apparatus.
    Type: Application
    Filed: November 27, 2012
    Publication date: November 13, 2014
    Inventor: Kohei Sasaki
  • Patent number: 8882077
    Abstract: This invention relates seed layers and a process of manufacturing seed layers for casting silicon suitable for use in solar cells or solar modules. The process includes the step of positioning tiles with aligned edges to form seams on a suitable surface, and the step of joining the tiles at the seams to form a seed layer. The step of joining includes heating the tiles to melt at least a portion of the tiles, contacting the tiles at both ends of at least one seam with electrodes, using plasma deposition of amorphous silicon, applying photons to melt a portion of the tiles, and/or layer deposition. Seed layers of this invention include a rectilinear shape of at least about 500 millimeters in width and length.
    Type: Grant
    Filed: January 28, 2010
    Date of Patent: November 11, 2014
    Assignee: AMG Idealcast Solar Corporation
    Inventor: Nathan G. Stoddard
  • Patent number: 8871025
    Abstract: In a crystal growth method, a seed crystal 8 and a source material 4 are provided in spaced relation inside of a growth crucible 6. Starting conditions for the growth of a crystal 14 in the growth crucible 6 are then established therein. The starting conditions include: a suitable gas inside the growth crucible 6, a suitable pressure of the gas inside the growth crucible 6, and a suitable temperature in the growth crucible 6 that causes the source material 4 to sublimate and be transported via a temperature gradient in the growth crucible 6 to the seed crystal 8 where the sublimated source material precipitates. During growth of the crystal 14 inside the growth crucible 6, at least one of the following growth conditions are intermittently changed inside the growth crucible 6 a plurality of times: the gas in the growth crucible 6, the pressure of the gas in the growth crucible 6, and the temperature in the growth crucible 6.
    Type: Grant
    Filed: September 27, 2007
    Date of Patent: October 28, 2014
    Assignee: II-VI Incorporated
    Inventors: Avinash Gupta, Utpal K. Chakrabarti, Jihong Chen, Edward Semenas, Ping Wu
  • Publication number: 20140308590
    Abstract: Provided is a solid electrolyte including an epitaxial thin film crystal made of an electrolyte containing at least lithium.
    Type: Application
    Filed: November 5, 2012
    Publication date: October 16, 2014
    Applicant: Sony Corporation
    Inventors: Hiromichi Ohta, Noriyuki Aoki
  • Patent number: 8853078
    Abstract: Material is deposited in a desired pattern by spontaneous deposition of precursor gas at regions of a surface that are prepared using a beam to provide conditions to support the initiation of the spontaneous reaction. Once the reaction is initiated, it continues in the absence of the beam at the regions of the surface at which the reaction was initiated.
    Type: Grant
    Filed: January 30, 2011
    Date of Patent: October 7, 2014
    Assignee: FEI Company
    Inventors: Aurelien Philippe Jean Maclou Botman, Steven Randolph, Milos Toth
  • Patent number: 8852343
    Abstract: Apparatus for vapor phase growing of crystals having a single multi-zone heater arranged to heat a heated zone to give a predetermined temperature profile along the length of the heated zone. A generally U-shaped tube having a first limb, a second limb, and a linkage connecting the first and second limbs is located on the heated zone. The first limb contains a source material. The second limb supports a seed such that the source material and seed are spaced longitudinally within the heated zone to provide a predetermined temperature differential between the source and seed. The crystal is grown on the seed.
    Type: Grant
    Filed: May 16, 2008
    Date of Patent: October 7, 2014
    Assignee: Kromek Limited
    Inventors: Arnab Basu, Ben Cantwell, Max Robinson
  • Publication number: 20140291694
    Abstract: A nonpolar III-nitride film grown on a miscut angle of a substrate, in order to suppress the surface undulations, is provided. The surface morphology of the film is improved with a miscut angle towards an a-axis direction comprising a 0.15° or greater miscut angle towards the a-axis direction and a less than 30° miscut angle towards the a-axis direction.
    Type: Application
    Filed: June 16, 2014
    Publication date: October 2, 2014
    Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Asako Hirai, Zhongyuan Jia, Makoto Saito, Hisashi Yamada, Kenji Iso, Steven P. DenBaars, Shuji Nakamura, James S. Speck
  • Publication number: 20140251205
    Abstract: A system for depositing a film on a substrate comprises a lateral control shutter disposed between the substrate and a material source. The lateral control shutter is configured to block some predetermined portion of source material to prevent deposition of source material onto undesirable portion of the substrate. One of the lateral control shutter or the substrate moves with respect to the other to facilitate moving a lateral growth boundary originating from one or more seed crystals. A lateral epitaxial deposition across the substrate ensues, by having an advancing growth front that expands grain size and forms a single crystal film on the surface of the substrate.
    Type: Application
    Filed: March 11, 2013
    Publication date: September 11, 2014
    Applicant: Tivra Corporation
    Inventor: Indranil De
  • Publication number: 20140245947
    Abstract: Highly textured [111] oriented films such as MgO crystalline films are deposited by e-beam evaporation on ordinary soda-lime glass. Semiconductor films such as silicon can be deposited on these MgO films using eutectics at temperatures below the softening point of ordinary glass and having extremely high textured and strong [111] orientation. The invention may be used for efficient and cost effective solar cells, displays, etc.
    Type: Application
    Filed: April 18, 2014
    Publication date: September 4, 2014
    Applicants: SOLAR-TECTIC, LLC, BLUE WAVE SEMICONDUCTORS, INC.
    Inventors: Ratnakar D. Vispute, Andrew Seiser
  • Patent number: 8821635
    Abstract: Si—Ge materials are grown on Si(100) with Ge-rich contents (Ge>50 at. %) and precise stoichiometries SiGe, SiGe2, SiGe3 and SiGe4. New hydrides with direct Si—Ge bonds derived from the family of compounds (H3Ge)xSiH4-x (x=1-4) are used to grow uniform, relaxed, and highly planar films with low defect densities at unprecedented low temperatures between about 300-450° C. At about 500-700° C., SiGex quantum dots are grown with narrow size distribution, defect-free microstructures and highly homogeneous elemental content at the atomic level. The method provides for precise control of morphology, composition, structure and strain. The grown materials possess the required characteristics for high frequency electronic and optical applications, and for templates and buffer layers for high mobility Si and Ge channel devices.
    Type: Grant
    Filed: April 8, 2005
    Date of Patent: September 2, 2014
    Assignee: Arizona Board of Regents on Behalf of Arizona State University
    Inventors: John Kouvetakis, Ignatius S. T. Tsong, Changwu Hu, John Tolle
  • Publication number: 20140239307
    Abstract: A rare earth oxide gate dielectric on III-N material grown on a silicon substrate includes a single crystal stress compensating template positioned on a silicon substrate. The stress compensating template is substantially crystal lattice matched to the surface of the silicon substrate. A GaN structure is positioned on the surface of the stress compensating template and substantially crystal lattice matched thereto. An active layer of single crystal III-N material is grown on the GaN structure and substantially crystal lattice matched thereto. A single crystal rare earth oxide dielectric layer is grown on the active layer of III-N material.
    Type: Application
    Filed: February 22, 2013
    Publication date: August 28, 2014
    Inventors: RYTIS DARGIS, ROBIN SMITH, ANDREW CLARK, ERDEM ARKUN, MICHAEL LEBBY
  • Publication number: 20140230724
    Abstract: A method for depositing a magnesium oxide thin film on a substrate by a laser abrasion method using a sintered body or single crystal of magnesium oxide as a target. In this method, a flat processed film made of magnesium oxide having a (111) plane as its front surface is prepared, using a substrate made of strontium titanate having a (111) plane as its principal surface or yttria-stabilized zirconia having a (111) plane as its principal surface, by directly depositing a film on the principal surface of the substrate and epitaxially growing the film.
    Type: Application
    Filed: March 9, 2012
    Publication date: August 21, 2014
    Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY
    Inventors: Tomofumi Susaki, Hideo Hosono, Tadahiro Fujihashi, Yoshitake Toda
  • Patent number: 8803194
    Abstract: Semiconductor structures are provided comprising a substrate and a epitaxial layer formed over the substrate, wherein the epitaxial layer comprises B; and one or more element selected from the group consisting of Zr, Hf and Al and has a thickness greater than 50 nm. Further, methods for integrating Group III nitrides onto a substrate comprising, forming an epitaxial buffer layer of a diboride of Zr, Hf, Al, or mixtures thereof, over a substrate; and forming a Group III nitride layer over the buffer layer, are provided which serve to thermally decouple the buffer layer from the underlying substrate, thereby greatly reducing the strain induced in the semiconductor structures upon fabrication and/or operation.
    Type: Grant
    Filed: January 4, 2008
    Date of Patent: August 12, 2014
    Assignee: Arizona Board of Regents, a body corporate of the State of Arizona Acting for and on Behalf of Arizona State University
    Inventors: John Kouvetakis, Radek Roucka
  • Publication number: 20140217554
    Abstract: A crystal laminate structure, in which crystals can be epitaxially grown on a ?-Ga2O3-based substrate with high efficiency to produce a high-quality ?-Ga2O3-based crystal film on the substrate; and a method for producing the crystal laminate structure are provided. The crystal laminate structure includes: a ?-Ga2O3-based substrate, of which the major face is a face that is rotated by 50 to 90° inclusive with respect to face; and a ?-Ga2O3-based crystal film which is formed by the epitaxial crystal growth on the major face of the ?-Ga2O3-based substrate.
    Type: Application
    Filed: August 2, 2012
    Publication date: August 7, 2014
    Applicant: TAMURA CORPORATION
    Inventor: Kohei Sasaki
  • Publication number: 20140212671
    Abstract: Growth of single- and few-layer macroscopically continuous graphene films on Co3O4(111) by molecular beam epitaxy (MBE) has been characterized using low energy electron diffraction (LEED), Auger electron spectroscopy (AES) and x-ray photoelectron spectroscopy (XPS). MBE of Co on sapphire(0001) at 750 K followed by annealing in UHV (1000 K) results in ˜3 monolayers (ML) of Co3O4(111) due to O segregation from the bulk. Subsequent MBE of C at 1000 K from a graphite source yields a graphene LEED pattern incommensurate with that of the oxide, indicating graphene electronically decoupled from the oxide, as well as a sp2 C(KVV) Auger lineshape, and ???* C(1s) XPS satellite. The data strongly suggest the ability to grow graphene on other structurally similar magnetic/magnetoelecric oxides, such as Cr2O3(111)/Si for spintronic applications.
    Type: Application
    Filed: July 13, 2012
    Publication date: July 31, 2014
    Inventor: Jeffry Kelber
  • Patent number: 8758510
    Abstract: A method is used for producing an SiC volume monocrystal by sublimation growth. During growth, by sublimation of a powdery SiC source material and by transport of the sublimated gaseous components into the crystal growth region, an SiC growth gas phase is produced there. The SiC volume monocrystal grows by deposition from the SiC growth gas phase on the SiC seed crystal. The SiC seed crystal is bent during a heating phase before such that an SiC crystal structure with a non-homogeneous course of lattice planes is adjusted, the lattice planes at each point have an angle of inclination relative to the direction of the center longitudinal axis and peripheral angles of inclination at a radial edge of the SiC seed crystal differ in terms of amount by at least 0.05° and at most by 0.2° from a central angle of inclination at the site of the center longitudinal axis.
    Type: Grant
    Filed: December 28, 2011
    Date of Patent: June 24, 2014
    Assignee: SiCrystal Aktiengesellschaft
    Inventors: Thomas Straubinger, Michael Vogel, Andreas Wohlfart
  • Publication number: 20140158943
    Abstract: A method of producing at least one of microscopic and submicroscopic particles includes providing a template that has a plurality of discrete surface portions, each discrete surface portion having a surface geometry selected to impart a desired geometrical property to a particle while being produced; depositing a constituent material of the at least one of microscopic and submicroscopic particles being produced onto the plurality of discrete surface portions of the template to form at least portions of the particles; separating the at least one of microscopic and submicroscopic particles comprising the constituent material from the template into a fluid material, the particles being separate from each other at respective discrete surface portions of the template; and processing the template for subsequent use in producing additional at least one of microscopic and submicroscopic particles.
    Type: Application
    Filed: September 12, 2013
    Publication date: June 12, 2014
    Applicant: The Regents of the University of California
    Inventor: Thomas G. Mason
  • Patent number: 8728586
    Abstract: In large area plasma processing systems, process gases may be introduced to the chamber via the showerhead assembly which may be driven as an RF electrode. The gas feed tube, which is grounded, is electrically isolated from the showerhead. The gas feed tube may provide not only process gases, but also cleaning gases from a remote plasma source to the process chamber. The inside of the gas feed tube may remain at either a low RF field or a zero RF field to avoid premature gas breakdown within the gas feed tube that may lead to parasitic plasma formation between the gas source and the showerhead. By feeding the gas through an RF choke, the RF field and the processing gas may be introduced to the processing chamber through a common location and thus simplify the chamber design.
    Type: Grant
    Filed: July 11, 2008
    Date of Patent: May 20, 2014
    Assignee: Applied Materials, Inc.
    Inventors: Jozef Kudela, Carl A. Sorensen, John M. White
  • Patent number: 8728235
    Abstract: A manufacturing method for three-dimensional GaN epitaxial structure comprises a disposing step, in which a substrate of LiAlO2 and a source metal of Ga are disposed inside an vacuum chamber. An exposing step is importing N ions in plasma state and generated by a nitrogen source into the chamber. A heating step is heating up the source metal to generate Ga vapor. A growing step is forming a three-dimensional GaN epitaxial structure with hexagonal micropyramid or hexagonal rod having a broadened disk-like surface on the substrate by reaction between the Ga vapor and the plasma state of N ions.
    Type: Grant
    Filed: September 28, 2009
    Date of Patent: May 20, 2014
    Assignee: National Sun Yat-Sen University
    Inventors: I-Kai Lo, Chia-Ho Hsieh, Yu-Chi Hsu, Wen-Yuan Pang, Ming-Chi Chou
  • Patent number: 8685165
    Abstract: Atomic layer deposition (ALD) type processes for producing titanium containing oxide thin films comprise feeding into a reaction space vapor phase pulses of titanium alkoxide as a titanium source material and at least one oxygen source material, such as ozone, capable of forming an oxide with the titanium source material. In preferred embodiments the titanium alkoxide is titanium methoxide.
    Type: Grant
    Filed: September 28, 2007
    Date of Patent: April 1, 2014
    Assignee: ASM International N.V.
    Inventors: Antti Rahtu, Raija Matero, Markku Leskela, Mikko Ritala, Timo Hatanpaa, Timo Hanninen, Marko Vehkamaki