Including A Sectioned Crucible (e.g., Double Crucible, Baffle) Patents (Class 117/213)
  • Patent number: 10801125
    Abstract: An apparatus for controlling heat flow within a melt. The apparatus may include a crucible configured to contain the melt where the melt has an exposed surface. The apparatus may also include a heater disposed below a first side of the crucible and configured to supply heat through the melt to the exposed surface, and a heat diffusion barrier assembly comprising at least one heat diffusion barrier disposed within the crucible and defining an isolation region in the melt and an outer region in the melt.
    Type: Grant
    Filed: July 16, 2019
    Date of Patent: October 13, 2020
    Inventors: Peter L. Kellerman, Frederick M. Carlson, David Morrell, Ala Moradian, Nandish Desai
  • Patent number: 10544517
    Abstract: The present invention relates to a method of growing a silicon ingot comprising a dopant material having a segregation coefficient of k, wherein the concentration of the dopant is axially substantially uniform throughout the ingot. The method comprises the steps of providing a crucible having an inner growth zone in fluid communication with an outer feed zone, and the inner growth zone and the outer feed zone have cross-sectional areas that are can be used to determine conditions for maintaining dopant uniformity for the specific dopant material used. A crystalline growth system for growing at least one uniformly doped silicon ingot is also disclosed.
    Type: Grant
    Filed: May 4, 2012
    Date of Patent: January 28, 2020
    Assignee: GTAT IP HOLDING LLC.
    Inventor: Bayard K. Johnson
  • Patent number: 10273596
    Abstract: A feed assembly supplies polysilicon to a growth chamber for growing a crystal ingot from a melt. An example system includes a housing having support rails for receiving one of a granular tray and a chunk tray and a feed material reservoir positioned above the support rails to selectively feed one of either the granular tray or the chunk tray. A valve mechanism and pulse vibrator are also disclosed.
    Type: Grant
    Filed: August 18, 2016
    Date of Patent: April 30, 2019
    Assignees: GLOBALWAFERS CO., LTD., DAEVAC INTERNATIONAL CO., LTD.
    Inventors: Seok Min Yun, Seong Su Park, Jun Hwan Ji, Won-Jin Choi, UiSung Jung, Young Jung Lee, Tae Su Koo, Sung-Jin Kim
  • Patent number: 10236122
    Abstract: BN nanosheets are prepared by a method comprising heating to a temperature of at least 500° C., a mixture comprising: (1) an alkali borohydride, and (2) an ammonium salt. NaN3 may be included to increase the yield. No catalyst is required, and the product produced contains less than 0.1 atomic percent metal impurities.
    Type: Grant
    Filed: November 18, 2014
    Date of Patent: March 19, 2019
    Assignee: The Board of Trustees of Northern Illinois University
    Inventors: Narayan S. Hosmane, Amartya Chakrabarti, Shena M. Peter
  • Patent number: 10202704
    Abstract: A Czochralski growth system is described comprising a growth chamber, a feed port, and a feed chamber comprising a container for feedstock and a feeder. The feed port is disposed in at least one side wall of the growth chamber, and the feed chamber is attached to the growth chamber at the feed port. The feeder is insertable into the growth chamber through the feed port and supplies the feedstock into the growth chamber. Preferably this system can be used for producing silicon ingots using a continuous Czochralski method.
    Type: Grant
    Filed: October 15, 2012
    Date of Patent: February 12, 2019
    Assignee: GTAT IP HOLDING LLC
    Inventors: William L. Luter, Verlin A. Lauher, Dick S. Williams, Howard P. Zinschlag, Neil Middendorf, David J. Dubiel
  • Patent number: 10202705
    Abstract: A Czochralski growth system is disclosed comprising a crucible, a silicon delivery system comprising a feeder having a delivery point overhanging the crucible and delivering a controllable amount of silicon into the crucible, and at least one doping mechanism controllably delivering at least one dopant material to the feeder. The system can comprise two or more doping mechanisms each loaded with a different dopant material and can therefore be used to prepare silicon ingots having multiple dopants. The resulting ingots have substantially constant dopant concentrations along their axes. Also disclosed is a method of Czochralski growth of at least one silicon ingot comprising at least one dopant material, which is preferably a continuous Czochralski method.
    Type: Grant
    Filed: April 13, 2012
    Date of Patent: February 12, 2019
    Assignee: GTAT IP HOLDING LLC
    Inventors: Bayard K. Johnson, John P. Deluca, William L. Luter
  • Patent number: 9863063
    Abstract: A system for growing a crystal ingot includes a crucible and a weir. The crucible has a base and a sidewall for the containment of a silicon melt therein. The weir is located along the base of the crucible inward from the sidewall of the crucible. The weir has a body connected with at least a pair of legs disposed to inhibit movement of the silicon melt therebetween.
    Type: Grant
    Filed: December 16, 2013
    Date of Patent: January 9, 2018
    Assignee: Corner Star Limited
    Inventor: Tirumani N. Swaminathan
  • Patent number: 9777396
    Abstract: A method for producing a crystal, according to the present invention, where the lower surface of a seed crystal which is rotatably arranged and made of silicon carbide is brought into contact with a solution of silicon solvent containing carbon in a crucible which is rotatably arranged and the seed crystal is pulled up and a crystal of silicon carbide is grown from the solution on the lower surface of the seed crystal, comprising the steps of bringing the lower surface of the seed crystal into contact with the solution in a contact step, rotating the seed crystal in a seed crystal rotation step, rotating the crucible in a crucible rotation step, and stopping rotation of the crucible, while the seed crystal is rotated in the state in which the lower surface of the seed crystal is in contact with the solution, in a deceleration step.
    Type: Grant
    Filed: October 29, 2012
    Date of Patent: October 3, 2017
    Assignee: KYOCERA CORPORATION
    Inventors: Chiaki Domoto, Katsuaki Masaki, Yutaka Kuba, Daisuke Ueyama, Kouji Miyamoto, Yuuichiro Hayashi
  • Patent number: 9745666
    Abstract: The present invention relates to a Czochralski growth apparatus and method, preferably a continuous Czochralski growth apparatus and method, in which solid feedstock provided from a delivery system during ingot growth is substantially prevented from entering the growth zone of a crucible. In this way, an ingot having exceptionally consistent properties is produced.
    Type: Grant
    Filed: September 9, 2013
    Date of Patent: August 29, 2017
    Assignee: GTAT IP HOLDING LLC
    Inventors: William L. Luter, Weidong Huang
  • Patent number: 9664448
    Abstract: Apparatus for the melting of silicon comprising a container for holding pieces of silicon and at least one means for heating silicon inside the container, wherein the container comprises a tube extending in a longitudinal direction for holding pieces of silicon and a bottom, wherein the tube is arranged on the bottom, wherein the bottom comprises at least one outlet for letting out melted silicon, and wherein the means for heating comprises at least one coil.
    Type: Grant
    Filed: July 30, 2012
    Date of Patent: May 30, 2017
    Assignee: Solar World Industries America Inc.
    Inventor: Nathan Stoddard
  • Patent number: 9476141
    Abstract: A system for growing a crystal ingot from a melt is provided. The system includes a first crucible, a barrier, and a shield. The first crucible has a first base and a first sidewall forming a first cavity for containing the melt. The barrier is disposed within the first cavity of the first crucible to inhibit movement of the melt from outward of the barrier to inward of the barrier. The barrier extends from the first base to above the melt. The barrier has an inner arm and an outer arm extending upward to form a channel therebetween. The shield extends downward between the inner arm and the outer arm to inhibit passage of contaminants.
    Type: Grant
    Filed: July 25, 2014
    Date of Patent: October 25, 2016
    Assignee: SunEdison, Inc.
    Inventor: Tirumani Swaminathan
  • Patent number: 9376336
    Abstract: Described herein is a method for producing a quartz glass crucible, including the steps of: preparing a crucible base material that is made of quartz glass and has a crucible shape; producing a synthetic quartz glass material by the direct process or the soot process; processing the synthetic quartz glass material into a crucible shape without pulverizing the synthetic quartz glass material; and welding the synthetic quartz glass material processed into the crucible shape to the inner surface of the crucible base material. As a result, there are provided a quartz glass crucible that avoids generation of dislocation in a silicon single crystal, the generation of dislocation caused by the crucible itself, at the time of production of a silicon single crystal and has high heat resistance, a method for producing the quartz glass crucible, and a method for producing a silicon single crystal, the method using such a quartz glass crucible.
    Type: Grant
    Filed: September 26, 2011
    Date of Patent: June 28, 2016
    Assignee: SHIN-ETSU HANDOTAI CO., LTD.
    Inventors: Akihiro Kimura, Suguru Matsumoto, Izumi Fusegawa, Katsuhiko Miki
  • Patent number: 9359690
    Abstract: Provided is a method for manufacturing a silicon carbide single crystal using a solution process including coming a seed crystal substrate for growing silicon carbide into contact with a Si—C alloy solution including at least one additive metal and growing the silicon carbide single crystal on a seed crystal for growing silicon carbide, including feeding a silicon feedstock into an alloy solution when a molar ratio of Si and the additive metal is lower than an initially set value as the reaction progresses. The method increases a crystal growth speed, maintains the growth speed, and prevents the growth from unwillingly stopping when the silicon carbide single crystal is manufactured using a solution growth process.
    Type: Grant
    Filed: October 17, 2011
    Date of Patent: June 7, 2016
    Assignee: SK Innovation Co., Ltd.
    Inventors: Sung Wan Hong, Young Shol Kim
  • Publication number: 20150144056
    Abstract: A system for growing an ingot from a melt includes an outer crucible, an inner crucible, and a weir. The outer crucible includes a first sidewall and a first base. The first sidewall and the first base define an outer cavity for containing the melt. The inner crucible is located within the outer cavity, and has a central longitudinal axis. The inner crucible includes a second sidewall and a second base having an opening therein. The opening in the second base is concentric with the central longitudinal axis. The weir is disposed between the outer crucible and the inner crucible for supporting the inner crucible.
    Type: Application
    Filed: November 22, 2013
    Publication date: May 28, 2015
    Inventors: Tirumani N. Swaminathan, John David Hilker, Salvador Zepeda
  • Patent number: 8992682
    Abstract: A graphite crucible for silicon single crystal manufacturing by the Czochralski method, having a long life cycle, contains at least one gas venting hole provided in a corner portion of the crucible. Gas generated by reaction between the graphite crucible and a quartz crucible is released to the outside through the gas venting hole, and formation of SiC on the surface of the graphite crucible and deformation of the quartz crucible caused by the pressure of the generated gas are prevented.
    Type: Grant
    Filed: October 28, 2010
    Date of Patent: March 31, 2015
    Assignee: Siltronic AG
    Inventors: Hideo Kato, Hideaki Murakami, Mikio Suehiro
  • Patent number: 8980004
    Abstract: A crucible for pulling a silicon single crystal has a double structure comprising a silica crucible and a graphite crucible covering an outside of the silica crucible, wherein the silica crucible is provided at its opening end portion with an inward falling prevention means for imparting a radially outward force to a body portion of the silica crucible.
    Type: Grant
    Filed: January 22, 2010
    Date of Patent: March 17, 2015
    Assignee: Japan Super Quartz Corporation
    Inventors: Masaru Sato, Masaki Morikawa
  • Patent number: 8951346
    Abstract: A silica glass crucible for pulling up a silicon single crystal including an outer layer formed from a natural silica glass layer, and an inner layer formed from a synthetic silica glass layer, wherein the synthetic silica glass layer includes a first synthetic silica glass layer formed in a region within a certain range from the center of a crucible bottom section, and a second synthetic silica glass layer formed in a region which excludes the formation region of the first synthetic silica glass layer, and wherein the first synthetic silica glass layer has a thickness of 0.5 mm or more and 1.5 mm or less and a concentration of an OH group included in the first synthetic silica glass layer being 100 ppm or less.
    Type: Grant
    Filed: December 8, 2009
    Date of Patent: February 10, 2015
    Assignee: Japan Super Quartz Corporation
    Inventors: Kazuhiro Harada, Masaki Morikawa, Satoshi Kudo
  • Patent number: 8888915
    Abstract: A high-purity vitreous silica crucible which has high strength and is used for pulling a large-diameter single-crystal silicon ingot, includes a double laminated structure constituted by an outer layer composed of amorphous silica glass with a bubble content of 1 to 10% and a purity of 99.99% or higher and an inner layer composed of amorphous silica glass with a bubble content of 0.6% or less and a purity of 99.99% or higher, and in the portion between the upper opening end of the high-purity vitreous silica crucible and the ingot-pulling start line of a silicon melt surface in the step of pulling a single-crystal silicon ingot, a portion corresponding to 40 to 100 volume % from the upper opening end of the crucible is in a crystalline structure free from the crystallization promoter.
    Type: Grant
    Filed: November 28, 2008
    Date of Patent: November 18, 2014
    Assignee: Japan Super Quartz Corporation
    Inventor: Tadahiro Sato
  • Patent number: 8864908
    Abstract: A crucible protection sheet is provided that can prevent damages to an inner crucible, hinder an outer crucible from silicon-carbidization, and transmit heat from the outer crucible to the inner crucible uniformly. In a crucible having an inner crucible 2 and an outer crucible 3, the crucible protection sheet is arranged between the two crucibles and is made of expanded graphite. The planar thermal conductivity is 120 W/(m·K) or higher, the gas permeability is less than 1.0×10?4 cm2/s, and the compression ratio is 20% or higher when the sheet is compressed in a thickness direction at a pressure of 34.3 MPa. Since the compression ratio is high, the effect of preventing breakage is great when inserting the inner crucible, improving workability and preventing the inner crucible from tilting inside the outer crucible.
    Type: Grant
    Filed: July 9, 2007
    Date of Patent: October 21, 2014
    Assignee: Toyo Tanso Co., Ltd.
    Inventors: Yoshiaki Hirose, Tetsuya Yuki
  • Patent number: 8840721
    Abstract: The present invention provides a method of producing low-resistivity silicon single crystal containing a dopant at a relatively high concentration by adding a large amount of the dopant to silicon melt when the silicon single crystal is pulled up, with suppressing occurrence of dislocation in the crystal. Specifically, the present invention provides a method of manufacturing silicon single crystal by bringing silicon seed crystal into contact with silicon melt and pulling up the silicon seed crystal while rotating the crystal to grow silicon single crystal whose straight body section has a diameter of ? mm below the silicon seed crystal, the method comprising: the dopant-adding step of adding a dopant to the silicon melt during growth of the straight body section of the silicon single crystal, while rotating the silicon single crystal at a rotational speed of ? rpm (where ??24?(?/25)).
    Type: Grant
    Filed: November 11, 2010
    Date of Patent: September 23, 2014
    Assignee: Sumco Techxiv Corporation
    Inventors: Yasuhito Narushima, Fukuo Ogawa, Toshimichi Kubota
  • Publication number: 20140261155
    Abstract: A system for growing a crystal ingot from a melt includes a first crucible, a second crucible, and a weir. The first crucible has a first base with a top surface and a first sidewall that form a first cavity. The second crucible is located within the first cavity of the first crucible, and has a second base and a second sidewall that form a second cavity. The second base has a bottom surface that is shaped to allow the second base to rest against the top surface of the first base. The second crucible includes a crucible passageway to allow movement of the melt therethrough. The weir is located inward from the second sidewall to inhibit movement of the melt from a location outward of the weir to a location inward of the weir.
    Type: Application
    Filed: March 15, 2013
    Publication date: September 18, 2014
    Inventors: Steve L. Kimbel, Steve John Ferguson
  • Publication number: 20140261154
    Abstract: A system for growing an ingot from a melt includes a first crucible, a second crucible, and a weir. The first crucible has a first base and a first sidewall that form an outer cavity for containing the melt. The weir is located on top of the first base at a location inward from the first sidewall to inhibit movement of the melt from a location outward of the weir to a location inward of the weir. The second crucible is sized for placement within the outer cavity and has a second base and a second sidewall that form an inner cavity. Related methods are also disclosed.
    Type: Application
    Filed: March 14, 2013
    Publication date: September 18, 2014
    Inventors: Tirumani N. Swaminathan, Salvador Zepeda, John David Hilker
  • Patent number: 8801853
    Abstract: This mechanism for controlling a melt level includes: an optical recording device by which a real image of a furnace internal structural object and a reflected image reflected on the melt surface; and a processing device which, taking a value based on the real image as a reference value, controls the position of the melt surface based on a relationship of a position or a size of the reflected image, a distance between the reflected image and the real image, or amounts of changes thereof to the position of the melt surface. This mechanism for adjusting a melt level includes: the above mechanism for controlling a melt level; and a lifting mechanism which is controlled by the mechanism for controlling a melt level and adjusts the melt surface to the set position.
    Type: Grant
    Filed: July 17, 2006
    Date of Patent: August 12, 2014
    Assignee: Sumco Corporation
    Inventor: Keiichi Takanashi
  • Publication number: 20140174337
    Abstract: A system for growing a crystal ingot includes a crucible and a weir. The crucible has a base and a sidewall for the containment of a silicon melt therein. The weir is located along the base of the crucible inward from the sidewall of the crucible. The weir has a body connected with at least a pair of legs disposed to inhibit movement of the silicon melt therebetween.
    Type: Application
    Filed: December 16, 2013
    Publication date: June 26, 2014
    Inventor: Tirumani N. Swaminathan
  • Publication number: 20140174338
    Abstract: A method of bonding a first silica part to a second silica part includes coating contacting surfaces of the first and second silica parts with a solution having one of silica and silica precursors. The coated surfaces of the first silica part are placed adjacent to the coated surfaces of the second silica part to form an assembly, and the assembly is heated.
    Type: Application
    Filed: December 19, 2013
    Publication date: June 26, 2014
    Inventors: Richard J. Phillips, Shailendra B. Rathod
  • Patent number: 8753446
    Abstract: Evaporated matters and reaction products produced in a furnace can be exhausted without contacting with a graphite crucible and a heater, and an exhaust pipe per se can be maintained at a high temperature to suppress the deposition and condensation of the evaporated matters and reaction products, whereby the clogging of the exhaust pipe is prevented, in addition, a conversion of the exhaust pipes per se into SiC is suppressed to improve the durability of the exhaust pipe, and the change in thermal expansion coefficient is suppressed, whereby a thermal single crystal can be pulled up in high quality. Further, the exhaust pipe is formed of a small number of materials to reduce a production cost. A heat shield (12) made of a heat insulating material is provided outside a heater (6), and a plurality of exhaust pipes (20) are provided between the heater (6) and the heat shield (12).
    Type: Grant
    Filed: December 13, 2005
    Date of Patent: June 17, 2014
    Assignee: Sumco Techxiv Kabushiki Kaisha
    Inventors: Akiko Noda, Tetsuhiro IIda
  • Publication number: 20140144371
    Abstract: An apparatus for growing ingots by the Czochralski method is described. The ingots are drawn from a melt/crystal interface in a quantity of molten silicon replenished by crystalline feedstock. The apparatus includes a crucible configured to hold the molten silicon and a weir supported in the crucible. The weir is configured to separate the molten silicon into an inner growth region from an outer region configured to receive the crystalline feedstock. The weir includes a sidewall extending vertically and a top wall. An annular heat shield is disposed on the top wall of the weir that covers at least about 70% of the outer region.
    Type: Application
    Filed: November 29, 2012
    Publication date: May 29, 2014
    Applicant: SOLAICX, INC.
    Inventor: Tirumani N. Swaminathan
  • Publication number: 20140144372
    Abstract: An apparatus for growing ingots by the Czochralski method includes a growth chamber defining an enclosure configured to circulate a purge gas about the growing ingot and a crucible provided in the growth chamber configured to hold the molten silicon. A weir is supported in the crucible and is configured to separate the molten silicon into an inner growth region surrounding the melt/crystal interface from an outer region configured to receive the crystalline feedstock. The weir comprises at least one sidewall extending vertically and a cap extending substantially perpendicularly to the sidewall.
    Type: Application
    Filed: November 29, 2012
    Publication date: May 29, 2014
    Applicant: SOLAICX, INC.
    Inventor: Tirumani N. Swaminathan
  • Patent number: 8673075
    Abstract: A method and apparatus for growing a semiconductor crystal include pulling the semiconductor crystal from melt at a pull speed and modulating the pull speed by combining a periodic pull speed with an average speed. The modulation of the pull speed allows in-situ determination of characteristic temperature gradients in the melt and in the crystal during crystal formation. The temperature gradients may be used to control relevant process parameters that affect morphological stability or intrinsic material properties in the finished crystal such as for instance the target pull speed of the crystal or the melt gap, which determines the thermal gradient in the crystal during growth.
    Type: Grant
    Filed: March 29, 2012
    Date of Patent: March 18, 2014
    Assignees: Sumco Phoenix Corporation, Sumco Corporation
    Inventors: Benno Orschel, Andrzej Buczkowski, Joel Kearns, Keiichi Takanashi, Volker Todt
  • Patent number: 8664135
    Abstract: An article including a monolithic crucible body comprising silicon oxynitride (SixNyO, wherein x>0 and y>0), wherein the silicon oxynitride extends throughout the entire volume of the monolithic crucible body.
    Type: Grant
    Filed: December 28, 2011
    Date of Patent: March 4, 2014
    Assignee: Saint-Gobain Ceramics & Plastics, Inc.
    Inventors: Edmund A. Cortellini, Christopher J. Reilly, Vimal K. Pujari
  • Patent number: 8652257
    Abstract: A melting furnace, mounted adjacent a growth furnace, comprises a receiving container for melting therein raw material in a particle or powder form falling in it from a feeder. The receiving container accommodates a set of slope-wise plates providing a distributed sliding of partially melted raw material particles over the surface of these plates and their complete melting while moving downward; eventually the melted raw material flows into the crucible of the growth furnace through a conveying tube extending slantingly from the bottom of the receiving container to the crucible through coaxial openings in housings of both furnaces. The rate of feeding is given solely by the feeder, and at continuous feeding the raw material flows continuously by gravity from the feeder to the crucible of the growth furnace, first in a solid state (powder, granules, pellets, etc.) and then in a liquid state.
    Type: Grant
    Filed: February 22, 2010
    Date of Patent: February 18, 2014
    Inventors: Lev George Eidelman, Vladimir Ilya Zheleznyak
  • Patent number: 8623138
    Abstract: A group-III nitride crystal growth method comprises the steps of: a) preparing a mixed molten liquid of an alkaline material and a substance at least containing a group-III metal; b) causing growth of a group-III nitride crystal from the mixed molten liquid prepared in the step a) and a substance at least containing nitrogen; and c) creating a state in which nitrogen can be introduced into the molten liquid prepared by the step a).
    Type: Grant
    Filed: January 14, 2009
    Date of Patent: January 7, 2014
    Assignee: Ricoh Company, Ltd.
    Inventors: Seiji Sarayama, Hisanori Yamane, Masahiko Shimada, Masafumi Kumano, Hirokazu Iwata, Takashi Araki
  • Patent number: 8524000
    Abstract: Methods for producing multicrystalline silicon ingots by use of a Czochralski-type crystal puller and pulling assemblies that include a plurality of seed crystals for pulling multicrystalline silicon ingots.
    Type: Grant
    Filed: December 23, 2009
    Date of Patent: September 3, 2013
    Assignee: MEMC Singapore Ptd. Ltd.
    Inventor: Steven L. Kimbel
  • Patent number: 8506708
    Abstract: A silica glass crucible for pulling up a silicon single crystal including a wall part and a bottom part is provided with a natural silica glass layer which forms at least one part of a an inner surface of the bottom part, and a synthetic silica glass layer which forms at least an inner surface of the wall part, wherein a concentration of Ca included in the natural silica glass layer is 0.5 ppm or less.
    Type: Grant
    Filed: October 28, 2009
    Date of Patent: August 13, 2013
    Assignee: Japan Super Quartz Corporation
    Inventors: Masanori Fukui, Satoshi Kudo
  • Patent number: 8496752
    Abstract: During a CZ or similar process, a silica crucible is held in a graphite or similar susceptor while being heated to above between about 1580 and 1620 degrees C. Vents or grooves formed in at least one of the outer surface of the crucible and the inner surface of the susceptor permit gasses to vent upwardly and out from between the crucible and susceptor. This permits gas evolved from the crucible as a result of the heat to be vented rather than expanding between the crucible and susceptor thereby deforming the crucible.
    Type: Grant
    Filed: September 2, 2009
    Date of Patent: July 30, 2013
    Assignee: Heraeus Shin-Etsu America, Inc.
    Inventors: Katsuhiko Kemmochi, Robert Joseph Coolich, Michael Randall Fallows
  • Patent number: 8449676
    Abstract: A silica glass crucible having a sidewall portion and a bottom portion is provided with a first synthetic silica glass layer constituting an inner layer at least in the sidewall portion, a second synthetic silica glass layer constituting an inner layer at least in a region including a center of the bottom portion, and a natural silica glass layer constituting an outer layer in the sidewall portion and the bottom portion. A melting rate of the second synthetic silica glass layer with respect to a silicon melt is higher than that of the first synthetic silica glass layer. An aluminum concentration of the second synthetic silica glass layer is higher than that of the first synthetic silica glass layer.
    Type: Grant
    Filed: April 27, 2009
    Date of Patent: May 28, 2013
    Assignee: Japan Super Quartz Corporation
    Inventors: Masanori Fukui, Hiroshi Kishi
  • Patent number: 8394198
    Abstract: A silica glass crucible for pulling up a silicon single crystal including a wall part, a corner part and a bottom part is provided with an outer layer formed from an opaque silica glass layer which includes many bubbles, and an inner layer formed from a transparent silica glass layer which substantially does not include bubbles, wherein at least one part of an inner surface of the wall part and the corner part being an uneven surface formed with multiple damaged parts having a depth of 50 ?m or more and 450 ?m or less, and wherein a region among the inner surface of the bottom part within a certain range from the center of the bottom part being a smooth surface which does is substantially not formed with damage.
    Type: Grant
    Filed: November 27, 2009
    Date of Patent: March 12, 2013
    Assignee: Japan Super Quartz Corporation
    Inventors: Masaki Morikawa, Jun Furukawa, Satoshi Kudo
  • Patent number: 8361228
    Abstract: A fused glass crucible includes a collar of doped aluminum silica that defines uppermost and outermost surfaces of the crucible. The melt line that defines the surface of molten silicon in the crucible may be substantially at the lower end of the collar or slightly above it. Crystallization of the collar makes it hard and therefore supports the remaining uncrystallized portion of the crucible above the melt line. The melt line may also be below the lower end of the collar, especially if the melt is drawn down or poured early in the process. Because there is little or no overlap or because the overlap does not last long, the doped aluminum collar is not damaged by the heat of from the melt.
    Type: Grant
    Filed: April 1, 2010
    Date of Patent: January 29, 2013
    Assignees: Heraeus Shin-Etsu America, Inc., Shin-Etsu Quartz Products Co., Ltd.
    Inventors: Katsuhiko Kemmochi, Yasuo Ohama
  • Publication number: 20120301386
    Abstract: A Czochralski growth system is disclosed comprising a crucible, a silicon delivery system comprising a feeder having a delivery point overhanging the crucible and delivering a controllable amount of silicon into the crucible, and at least one doping mechanism controllably delivering at least one dopant material to the feeder. The system can comprise two or more doping mechanisms each loaded with a different dopant material and can therefore be used to prepare silicon ingots having multiple dopants. The resulting ingots have substantially constant dopant concentrations along their axes. Also disclosed is a method of Czochralski growth of at least one silicon ingot comprising at least one dopant material, which is preferably a continuous Czochralski method.
    Type: Application
    Filed: April 13, 2012
    Publication date: November 29, 2012
    Applicant: GT Advanced CZ, LLC
    Inventors: Bayard K. Johnson, John P. DeLuca, William L. Luter
  • Patent number: 8317919
    Abstract: An improved system based on the Czochralski process for continuous growth of a single crystal ingot comprises a low aspect ratio, large diameter, and substantially flat crucible, including an optional weir surrounding the crystal. The low aspect ratio crucible substantially eliminates convection currents and reduces oxygen content in a finished single crystal silicon ingot. A separate level controlled silicon pre-melting chamber provides a continuous source of molten silicon to the growth crucible advantageously eliminating the need for vertical travel and a crucible raising system during the crystal pulling process. A plurality of heaters beneath the crucible establish corresponding thermal zones across the melt. Thermal output of the heaters is individually controlled for providing an optimal thermal distribution across the melt and at the crystal/melt interface for improved crystal growth. Multiple crystal pulling chambers are provided for continuous processing and high throughput.
    Type: Grant
    Filed: February 25, 2005
    Date of Patent: November 27, 2012
    Assignee: Solaicx, Inc.
    Inventor: David L Bender
  • Patent number: 8277559
    Abstract: A quartz glass crucible which has a non-transparent outer layer formed through melting a natural silica powder and a transparent layer formed in the inside of the outer layer, wherein the transparent layer comprises a natural quartz layer having a thickness of 0.4 to 5.0 mm transparent layer comprising a synthetic quarts glass is formed thereon in the inside of the crucible in the range of 0.15 to 0.55 L relative to L, which is the distance from the center of the bottom of the inner surface of the quartz glass crucible to the upper end thereof along the inner surface thereof. The quartz glass crucible can be suitably used for suppressing the occurrence of vibration and reducing the generation of roughened face in the surface of a crucible, and thus for pulling up a silicon single crystal with enhanced stability.
    Type: Grant
    Filed: April 26, 2004
    Date of Patent: October 2, 2012
    Assignees: Heraeus Quarzglas GmbH & Co. KG, Shin-Estu Quartz Products Co., Ltd.
    Inventor: Yasuo Ohama
  • Patent number: 8257495
    Abstract: A crucible holding member includes a mesh body having an axis direction. The mesh body includes a hollow, an opening, and a plurality of strands. The hollow is provided inside the opening. The opening faces toward one end of the axis direction. The plurality of strands include a plurality of carbon fibers and are woven diagonally with respect to the axis direction to provide the hollow and the opening. The plurality of strands are folded inwardly or outwardly at an edge of the opening, thereby providing a two-layered portion along the edge of the opening. A matrix is filled between the plurality of carbon fibers of the mesh body.
    Type: Grant
    Filed: June 15, 2009
    Date of Patent: September 4, 2012
    Assignee: Ibiden Co., Ltd.
    Inventors: Hideki Kato, Haruhide Shikano, Masahiro Yasuda
  • Patent number: 8241424
    Abstract: An upper side heater 10 is configured so that a current passage width becomes larger at a heater lower part than at a heater upper part. Thus, the upper side heater 10 has a current-carrying cross-sectional area which becomes larger at the heater lower part than at the heater upper part, a resistance value becomes accordingly smaller at the heater lower part than at the heater upper part, and a heat generation amount becomes relatively smaller at the heater lower part than at the heater upper part. Meanwhile, a lower side heater 20 is configured so that the current passage width becomes larger at the heater upper part than at the heater lower part. Thus, the current-carrying cross-sectional area of the lower side heater 20 becomes larger at the heater upper part than at the heater lower part, a resistance value becomes accordingly smaller at the heater upper part than at the heater lower part, and a heat generation amount becomes relatively smaller at the heater upper part than at the heater lower part.
    Type: Grant
    Filed: September 25, 2006
    Date of Patent: August 14, 2012
    Assignee: Sumco Techxiv Kabushiki Kaisha
    Inventors: Tetsuhiro Iida, Yutaka Shiraishi, Junsuke Tomioka
  • Patent number: 8236104
    Abstract: A single-crystal manufacturing apparatus comprising at least: a main chamber configured to accommodate a crucible; a pulling chamber continuously provided above the main chamber, the pulling chamber into which a grown single crystal is pulled and accommodated; a gas inlet provided in the pulling chamber; a gas flow-guide cylinder downwardly extending from a ceiling of the main chamber; and a heat-insulating ring upwardly extending from a lower end portion of the gas flow-guide cylinder with a diameter of the heat-insulating ring increased so as to surround an outside of the gas flow-guide cylinder, wherein at least one window is provided in a region between 50 and 200 mm from a lower end of the gas flow-guide cylinder, and an opening area of the window accounts for 50% or more of a surface area of the region between 50 and 200 mm from the lower end of the gas flow-guide cylinder.
    Type: Grant
    Filed: May 8, 2009
    Date of Patent: August 7, 2012
    Assignee: Shin-Etsu Handotai Co., Ltd.
    Inventors: Satoshi Soeta, Toshifumi Fujii
  • Patent number: 8221111
    Abstract: Disclosed is a mold wherein one bottom surface member (2) and four lateral surface members (3) are assembled. The sides of each lateral surface member (3) are respectively provided with a projection (5) and a recess (6) for combining the lateral surface members together, and the projection (5) of one lateral surface member (3) is engaged with the recess (6) of the adjacent lateral surface member (3). By using the one bottom surface member (2) and four lateral surface members (3), a mold can be assembled or disassembled without using screw or bolts. Consequently, the assembly or disassembly work of the mold is dramatically simplified, thereby improving work efficiency significantly.
    Type: Grant
    Filed: January 27, 2005
    Date of Patent: July 17, 2012
    Assignee: Kyocera Corporation
    Inventors: Youhei Sakai, Yoshiyuki Amano
  • Patent number: 8221550
    Abstract: A process for producing a single crystal of semiconductor material, in which fractions of a melt, are kept in liquid form by a pulling coil, solidify on a seed crystal to form the growing single crystal, and granules are melted in order to maintain the growth of the single crystal. The melting granules are passed to the melt after a delay. There is also an apparatus which Is suitable for carrying out the process and has a device which delays mixing of the molten granules and of the melt.
    Type: Grant
    Filed: December 17, 2009
    Date of Patent: July 17, 2012
    Assignee: Siltronic AG
    Inventor: Wilfried von Ammon
  • Patent number: 8172945
    Abstract: A high-purity vitreous silica crucible used for pulling a large-diameter single-crystal silicon ingot, includes a double layered structure constituted by an outer layer composed of high-purity amorphous vitreous silica with a bubble content of 1 to 10% and a purity of 99.99% or higher, and an inner layer composed of high-purity amorphous vitreous silica s with a bubble content of 0.6% or less and a purity of 99.99% or higher, wherein, at least for an inner surface of the vitreous silica crucible between ingot-pulling start line and ingot-pulling end line of a silicon melt surface, a longitudinal section of the inner surface is shaped into a waveform, and depth and width of the ring grooves constituting the multi ring-groove patterned face are set in the range of 0.5 to 2 mm and 10 to 100 mm, respectively.
    Type: Grant
    Filed: November 28, 2008
    Date of Patent: May 8, 2012
    Assignee: Japan Super Quartz Corporation
    Inventor: Atushi Shimazu
  • Patent number: 8142565
    Abstract: A vitreous silica crucible for pulling single-crystal silicon, which is formed of vitreous silica and has a bottomed cylindrical shape, wherein, in a liquid-level movement range in the inner surface of the crucible, ranging from a position corresponding to the liquid surface level of a silicon melt at the time of stating the pulling of single-crystal silicon to a position corresponding to the liquid surface level of a silicon melt at the time of finishing the pulling of single-crystal silicon, the concentration of an OH group included in the vitreous silica is higher in an erosion thickness portion of the inner surface of the crucible than that in the range lower than the liquid surface level which is positioned below the liquid-level movement range.
    Type: Grant
    Filed: November 28, 2008
    Date of Patent: March 27, 2012
    Assignee: Japan Super Quartz Corporation
    Inventors: Hiroshi Kishi, Minoru Kanda
  • Patent number: 8114218
    Abstract: A single crystal pull apparatus has a multilayer crucible wherein the crucible has an outer crucible, an insertable layer intimately fitted thereon, and a wire frame positioned between the insertable layer and an inner crucible. The insertable layer, wire frame and inner crucible are preferably composed of platinum. Furthermore the insertable layers have thin walls and the frame has a small diameter such that they can be easily reshaped after any deformation occurring as a result of the single crystal growth process.
    Type: Grant
    Filed: September 2, 2008
    Date of Patent: February 14, 2012
    Assignee: Siemens Medical Solutions USA, Inc.
    Inventors: Olexy V. Radkevich, Keith Ritter
  • Publication number: 20110139064
    Abstract: A graphite crucible for silicon single crystal manufacturing by the Czochralski method, having a long life cycle, contains at least one gas venting hole provided in a corner portion of the crucible. Gas generated by reaction between the graphite crucible and a quartz crucible is released to the outside through the gas venting hole, and formation of SiC on the surface of the graphite crucible and deformation of the quartz crucible caused by the pressure of the generated gas are prevented.
    Type: Application
    Filed: October 28, 2010
    Publication date: June 16, 2011
    Applicant: SILTRONIC AG
    Inventors: Hideo Kato, Hideaki Murakami, Mikio Suehiro