Abstract: A single crystal pull apparatus has a multilayer crucible wherein the crucible has an outer crucible, an insertable layer intimately fitted thereon, and a wire frame positioned between the insertable layer and an inner crucible. The insertable layer, wire frame and inner crucible are preferably composed of platinum. Furthermore the insertable layers have thin walls and the frame has a small diameter such that they can be easily reshaped after any deformation occurring as a result of the single crystal growth process.

Abstract: A graphite crucible for silicon single crystal manufacturing by the Czochralski method, having a long life cycle, contains at least one gas venting hole provided in a corner portion of the crucible. Gas generated by reaction between the graphite crucible and a quartz crucible is released to the outside through the gas venting hole, and formation of SiC on the surface of the graphite crucible and deformation of the quartz crucible caused by the pressure of the generated gas are prevented.

Abstract: The present invention provides a silica glass crucible for manufacturing a silicon single crystal, in which melt vibration can be controlled more certainly and a high yield of single crystal can be realized. A first substantially bubble-free layer 10a having a thickness of 100 ?m-450 ?m is formed on the inner periphery side of an initial melt line zone 10 which has a height of 10 mm-30 mm, of a transparent layer, a bubble-containing layer 10b having a thickness of 100 ?m or more and bubbles with an average diameter of 20 ?m-60 ?m is formed outside the above-mentioned first substantially bubble-free layer 10a, and a second substantially bubble-free layer 10c having a thickness of 300 ?m or more is formed on the inner periphery side in the whole region lower than the above-mentioned initial melt line zone 10.

Abstract: A silicon wafer having no epitaxially deposited layer or layer produced by joining to the silicon wafer, with a nitrogen concentration of 1·1013-8·1014 atoms/cm3, an oxygen concentration of 5.2·1017-7.5·1017 atoms/cm3, a central thickness BMD density of 3·108-2·1010 cm?3, a cumulative length of linear slippages ?3 cm and a cumulative area of areal slippage regions ?7 cm2, the front surface having <45 nitrogen-induced defects of >0.13 ?m LSE in the DNN channel, a layer at least 5 ?m thick, in which ?1·104 COPs/cm3 with a size of ?0.09 ?m occur, and a BMD-free layer ?5 ?m thick. Such wafers may be produced by heat treating the silicon wafer, resting on a substrate holder, a specific substrate holder used depending on the wafer doping. For each holder, maximum heating rates are selected to avoid formation of slippages.

Abstract: A method of growing ribbon crystal provides a crucible containing molten material, and passes at least two strings through the molten material to produce a partially formed ribbon crystal. The method then directs a fluid to a given portion of the partially formed ribbon crystal to convectively cool the given portion.

Abstract: A surface modified quartz glass crucible and a process for modifying the crucible includes a layer of a metal oxide on the whole or a part of the inside and/or outside of the crucible, and baking it. At least an inside surface of the crucible is coated with a said metal oxide of magnesium, calcium, strontium or barium. The coated layer of the crucible does not abrade easily and provides a high dislocation free ratio of silicon single crystals pulled by using the crucible.

Abstract: A crucible for pulling a silicon single crystal has a double structure comprising a silica crucible and a graphite crucible covering an outside of the silica crucible, wherein the silica crucible is provided at its opening end portion with an inward falling prevention means for imparting a radially outward force to a body portion of the silica crucible.

Abstract: A process for producing a single crystal of semiconductor material, in which fractions of a melt, are kept in liquid form by a pulling coil, solidify on a seed crystal to form the growing single crystal, and granules are melted in order to maintain the growth of the single crystal. The melting granules are passed to the melt after a delay. There is also an apparatus which Is suitable for carrying out the process and has a device which delays mixing of the molten granules and of the melt.

Abstract: In a Czochralski (CZ) single crystal puller equipped with a cooler and a thermal insulation member, which are to be disposed in a CZ furnace, smooth recharge and additional charge of material are made possible. Further, elimination of dislocations from a silicon seed crystal by use of the Dash's neck method can be performed smoothly. To these ends, there is provided a CZ single crystal puller, wherein a cooler and a thermal insulation member are immediately moved upward away from a melt surface during recharge or additional charge of material or during elimination of dislocations from a silicon seed crystal by use of the Dash's neck method.

Abstract: A highly pure, replaceable wear insert and a process for manufacturing the same use a group of materials which is suitable for meeting the requirements of high temperature semiconductor technology processes and is chosen at the same time for producing thin layers or components therefrom. The materials are compacted and purified at high temperatures in compression molds and the products so produced are put to their intended use. The substantially thin-walled and crucible-shaped, always highly pure components, which are predominantly made of expanded graphite, are employed as a wear insert for protecting graphitic support crucibles from reactive attack by quartz glass crucibles in semiconductor technology processes at temperatures above 500° C.

Abstract: A single crystal pull apparatus has a multilayer crucible wherein the crucible has an outer crucible, an insertable layer intimately fitted thereon, and a wire frame positioned between the insertable layer and an inner crucible. The insertable layer, wire frame and inner crucible are preferably composed of platinum. Furthermore the insertable layers have thin walls and the frame has a small diameter such that they can be easily reshaped after any deformation occurring as a result of the single crystal growth process.

Abstract: A crucible protection sheet is provided that can prevent damages to an inner crucible, hinder an outer crucible from silicon-carbidization, and transmit heat from the outer crucible to the inner crucible uniformly. In a crucible having an inner crucible 2 and an outer crucible 3, the crucible protection sheet is arranged between the two crucibles and is made of expanded graphite. The planar thermal conductivity is 120 W/(m·K) or higher, the gas permeability is less than 1.0×10?4 cm2/s, and the compression ratio is 20% or higher when the sheet is compressed in a thickness direction at a pressure of 34.3 MPa. Since the compression ratio is high, the effect of preventing breakage is great when inserting the inner crucible, improving workability and preventing the inner crucible from tilting inside the outer crucible.

Abstract: A method and an apparatus for producing crystals wherein crystal quality can be kept and a crystal composition is uniformed from a growth early stage to a growth last stage are provided. In an apparatus for producing crystals wherein the crystals 13 are grown from a liquefying raw material 12 in a crucible retained in a furnace and slowly cooling the raw material 12 in the crucible 11 from below upward, the apparatus comprises a raw material supply apparatus 18 which supplies a resupply raw material, and a reflection plate 20 placed above the crucible 11, which liquefies the resupply raw material 19 supplied from the raw material supply apparatus 18 and drops it as a liquid into the crucible.

Abstract: The invention relates to a technique for producing a high quality Si single crystal ingot with a high productivity by the Czochralski method. The technique of the invention can control the magnetic field strength of an oxygen dissolution region different from that of a solid-liquid interface region in order to control the oxygen concentration at a desired value.

Abstract: Methods and apparatus for concurrent growth of multiple crystalline ribbons from a single crucible employ meniscus shapers to facilitate continuous growth of discrete and substantially flat crystalline ribbons having controlled width.

Abstract: A device and method for producing Ga doped silicone single crystal with a diameter between 150 and 165 mm and a narrow resistivity distribution range (from 3 ?·cm to 0.5 ?·cm). The device is characterized by the use of a shorter heater and a funnel shaped gas flow guide capable of blowing an inert gas such as Ar straight to the crystallization frontier at the interface between outer surface of the nascent single crystal ingot and the surface of the melt of polycrystalline silicone raw materials in a quartz crucible.

Abstract: A vitreous crucible for holding semiconductor material during a moncrystalline ingot growing process has a sidewall. Part of the sidewall is coated with a devitrification promoter and part of the sidewall is substantially free from devitrification promoter coating. When the crucible is heated as it would be during an ingot growing process, the devitrification promoter induces crystallization of portions of the sidewall, thereby forming enhanced stiffness sidewall portions. Areas that are substantially free from devitrification promoters remain vitreous and are softened by the heat. These become stress accommodating sidewall portions. Flow of the vitreous material in the stress accommodating sidewall portions relieves stresses that would otherwise build up in the sidewall.

Abstract: A heat shielding member 20 that thermally shields the periphery of a single crystal 16 used in a Czochralski single crystal pulling device that pulls the single crystal 16 from a melt 15 that is collected in a crucible 10 is disclosed. The heat shielding member 20 is provided with an approximately cylindrical main body portion 21 arranged so as to surround the single crystal 16, with a lower end portion thereof extending to the vicinity of the melt 15, and an approximately annular bottom plate portion 22 that extends in the diameter direction from the bottom end portion of the main body portion 21 to cover the melt. The bottom plate portion 22 is attached to the main body portion 21 in the state of being severed in the circumferential direction at at least one location. With this constitution it is possible to provide a heat shielding member with superior durability and a single crystal pulling device that employs the heat shielding member.

Abstract: The bottom of the crucible has much greater thermal transfer properties, parallel to an axis substantially perpendicular to the bottom, than those of the side walls. The bottom and side walls are formed by materials having the same main chemical constituents. The bottom can be transparent to infrared radiation and the side walls opaque to infrared radiation. The bottom can be made of amorphous silica and the side walls of opaque quartz ceramic. The crucible can also be made of graphite. The device can comprise a graphite felt, arranged between the bottom of the crucible and cooling means, and compression means of the graphite felt. It is thus possible to define a temperature gradient comprised between 8° C./cm and 30° C./cm in the liquid phase.

Abstract: The present invention relates to silicon nitride mould parts, particularly crucibles for use in connection with directional solidification and pulling of silicon single crystals. The mould parts consist of Si3N4 having a total open porosity between 40 and 60% by volume and where more than 50% of the pores in the surface of the mould parts have a size which is larger than the means size of the Si3N4 particles. The invention further relates to a method for producing the silicon nitride mould parts.

Abstract: A method and apparatus for growth of uniform multi-component single crystals is provided. The single crystal material has at least three elements and has a diameter of at least 50 mm, a dislocation density of less than 100 cm?1 and a radial compositional variation of less than 1%.

Abstract: A semiconductor single crystal manufacturing apparatus capable of lowering the local deterioration of a wire under high temperature atmosphere in the furnace of a chamber, wherein a crucible (24) in which silicon melt (28) is filled is installed in the furnace of the chamber (22), a pull-chamber (23) is disposed above the chamber (22), and a seed holder (32) lifting between the inside of the pull-chamber (23) and the inside of the furnace is suspended by a wire (50) through a coupling member (31). A collar (52) is fitted to the wire (50) so that, when the seed holder (32) is positioned to touch the melt, the exposed portion of the wire (50) near the tip thereof becomes a specified temperature or below under the high temperature atmosphere in the furnace.

Abstract: Provided are a crucible which prevents polycrystal formation to easily allow growth of optical part material single crystals, and a single crystal growth method employing the crucible. The crucible has a smooth surface of about Rmax 3.2 s as the surface roughness of the wall surface 1H, concave curved plane 1J, cone surface 1F and convex curved plane 1L of the starting material carrying section 1D and the wall surface 1K of the seed carrying section 1E, which constitute the inner surface of the crucible of a crucible body 1A.

Abstract: Provided are a crucible which prevents polycrystal formation to easily allow growth of optical part material single crystals, and a single crystal growth method employing the crucible. The crucible has a smooth surface of about Rmax 3.2s as the surface roughness of the wall surface 1H, concave curved plane 1J, cone surface 1F and convex curved plane 1L of the starting material carrying section 1D and the wall surface 1K of the seed carrying section 1E, which constitute the inner surface of the crucible of a crucible body 1A.

Abstract: A method and apparatus for growing silicon carbide crystals is provided. The apparatus includes a sublimation chamber with a plurality of spaced apart dividers that can direct the direction of silicon carbide crystal growth into passages between the dividers to form a plurality of silicon carbide crystal plates. The silicon carbide crystal plates can be used as seed crystals in subsequent sublimation steps in a manner that promotes the growth of silicon carbide crystals in different crystallographic directions to thereby terminate defect formation.

Abstract: An apparatus including a crucible, an energy source, and a controller is provided. The crucible may be sealed to a nitrogen-containing gas, and may be chemically inert to at least ammonia at a temperature in a range of about 400 degrees Celsius to about 2500 degrees Celsius. The energy source may supply thermal energy to the crucible. The controller may control the energy source to selectively direct sufficient thermal energy to a predefined first volume within the crucible to attain and maintain a temperature in the first volume to be in a range of from about 400 degrees Celsius to about 2500 degrees Celsius. The thermal energy may be sufficient to initiate, sustain, or both initiate and sustain growth of a crystal in the first volume. The first temperature in the first volume may be controllable separately from a second temperature in another volume within the crucible. The first temperature and the second temperature differ from each other. Associated methods are provided.

Abstract: The invention relates to a device for the production of crystal rods having a defined cross-section and a column-shaped polycrystalline structure by means of floating-zone continuous crystallization, comprising at least one crucible filled with crystalline material, provided with a central deviation for transporting the contents of the crucible to a growing crystal rod arranged below the crucible, whereby the central deviation plunges into the melt meniscus, also comprising means for continuously adjustable provision of crystalline material to the crucible, and means for simultaneously feeding the melt energy and adjusting the crystallization front.

Abstract: The present invention provides a silica glass crucible for manufacturing a silicon single crystal, in which melt vibration can be controlled more certainly and a high yield of single crystal can be realized. A first substantially bubble-free layer 10a having a thickness of 100 ?m-450 ?m is formed on the inner periphery side of an initial melt line zone 10, which has a height of 10 mm-30 mm, of a transparent layer, a bubble-containing layer 10b having a thickness of 100 ?m or more and bubbles with an average diameter of 20 ?m-60 ?m is formed outside the above-mentioned first substantially bubble-free layer 10a, and a second substantially bubble-free layer 10c having a thickness of 300 ?m or more is formed on the inner periphery side in the whole region lower than the above-mentioned initial melt line zone 10.

Abstract: The invention is directed to apparatus and methods for measuring and for reducing dust in granular polysilicon. In one aspect, a system includes a process vessel having a vacuum port for pulling dust from the polysilicon. Another system of the invention includes a baffle tube for receiving a polysilicon flow. A measuring system includes a manifold and filter for separating and measuring the dust from a flow of polysilicon. The invention is also directed to methods of using the systems, to methods of manufacturing and packaging granular polysilicon, and to a supply of granular polysilicon.

Abstract: By utilizing a crystal pulling apparatus for producing a single crystal according to the Czochralski method comprising at least a crucible to be charged with a raw material, a heater surrounding the crucible, and subsidiary heating means provided below the crucible, a single crystal is pulled or the raw material is additionally introduced with heating by the heater surrounding the crucible and the subsidiary heating means when the amount of the raw material melt in the crucible becomes a limited amount. Thus, there is provided a method for growing a single crystal at a high yield while preventing solidification of melt raw material decreased to a limited amount without affecting crystal quality, durability of crucible or the like even when a crucible having a large diameter is used.

Abstract: In order to pull semiconductor single crystals by the Czochralski method, quartz glass crucibles are used which require support crucibles having high temperature capabilities. Such support crucibles may be made of various materials, in which case graphite materials, carbon fiber-reinforced carbon (CFC), combinations thereof or carbon materials coated with silicon carbide (SiC) are used. The working life of a CFC support crucible can be extended by a partial thickening of the support crucible walls affected by corrosion processes.

Abstract: Methods and system for controlling crystal growth in a Czochralski crystal growing apparatus. A magnetic field is applied within the crystal growing apparatus and varied to control a shape of the melt-solid interface where the ingot is being pulled from the melt. The shape of the melt-solid interface is formed to a desired shape in response to the varied magnetic field as a function of a length of the ingot.

Abstract: In a device and a method for measuring the position of the liquid surface of a melt while a single crystal is being pulled, two measuring-lines are defined in an image of a fusion ring which is captured by means of a two-dimensional CCD camera, the intersections of the respective measuring lines and the fusion ring, on the opposite sides of the fusion ring, are detected, and the central position of the single crystal is calculated based on the intervals between the intersections on the opposite sides of the fusion ring, whereby the position of the liquid surface of the melt is determined.

Abstract: This invention provides a high purity silica crucible having low impurity concentration in its inner portion, and its production method. The crucible, in which at least each content of Na and Li being contained in the depth of 1 mm from the inside surface is less than 0.05 ppm, is given by a production method of a high purity silica glass crucible, wherein a purity of the melted silica powder layer is increased by applying a voltage between a mold and an arc electrode to move impurity metals being contained in the melted silica glass layer to the outside, when the silica crucible is produced by arc plasma heating a raw material powder of silica in an inside surface of a hollow rotary mold. The method comprises, keeping an arc electrode potential of within ±500 V during an arc melting, applying a voltage of from ?1000 V to ?20000 V to a mold being insulated to the ground, and applying a high voltage to the un-melted silica powder layer of the outside.

Abstract: A single crystal semiconductor manufacturing apparatus in which the concentration of oxygen in a single crystal semiconductor is controlled while pulling up a single crystal semiconductor such as single crystal silicon by the CZ method, a single crystal semiconductor manufacturing method, and a single crystal ingot manufactured by the method are disclosed. The natural convection (20) in the melt (5) in a quartz crucible (3) is controlled by regulating the temperatures at a plurality of parts of the melt (5). A single crystal semiconductor (6) can have a desired diameter by regulating the amount of heat produced by heating means (9a) on the upper side. Further the ratio between the amount of heat produced by the upper-side heating means (9a) and that by the lower-side heating means (9b) is adjusted to vary the process condition. In the adjustment, the amount of heat produced by the lower-side heating means (9b) is controlled to a relatively large proportion.

Abstract: The process for growing single crystals, wherein crystal material is melted in a crucible and a crystal nucleus is immersed in the molten crystal material and slowly pulled out, wherein the crystal formed during the pulling is kept at a temperature close to melting temperature of the output material. The invention also includes a device for practicing the above process.

Abstract: A method of forming at least one single crystal of a Group III metal nitride. The method includes the steps of: providing a flux material and a source material comprising at least one Group III metal selected from the group consisting of aluminum, indium, and gallium, to a reaction vessel; sealing the reaction vessel; heating the reaction vessel to a predetermined temperature and applying a predetermined pressure to the vessel. The pressure is sufficient to suppress decomposition of the Group III metal nitride at the temperature. Group III metal nitrides, as well as electronic devices having a Group III metal nitride substrate formed by the method are also disclosed.

Abstract: A single crystal pulling apparatus for a metal fluoride comprising a crucible provided in a chamber for filling with a molten solution of a single crystal material, a melting heater provided to surround the crucible, a vertically movable single crystal pulling bar for attaching a seed crystal on a tip thereof for coming in contact with the molten solution of the single crystal material in the crucible, a heat insulating wall provided in the chamber to surround at least a peripheral side portion of a single crystal pulling region in an upper part of the crucible, a ceiling board for closing an opening portion of an upper end in an upper part of the heat insulating wall, and a single crystal pulling chamber surrounded by the heat insulating wall and the ceiling board, wherein the ceiling board is provided with at least an inserting hole for inserting the single crystal pulling bar, and wherein a coefficient of thermal conductivity in a direction of a thickness of the ceiling board is 1000 to 50000 W/m2·K.

Abstract: In single crystal growth by means of a CZ method, a granular/lump polycrystalline raw material is additionally supplied into a raw material melt in a crucible through a vertical charging tube. A raw material accumulating section is provided at a site part way downward in the vertical charging tube working in such a way that a predetermined amount of the polycrystalline raw material is accumulated in the raw material accumulating section and the polycrystalline raw material in excess of the predetermined amount falls down. The polycrystalline raw material falling down in the vertical charging tube strikes against the accumulated raw material in the raw material accumulating section, thereby absorbing a shock of the falling raw material. The accumulated raw material works simultaneously as a protective member, thereby preventing breakage of the tube accompanying absorption of the shock from occurring.

Abstract: Methods and apparatus for concurrent growth of multiple crystalline ribbons from a single crucible employ meniscus shapers to facilitate continuous growth of discrete and substantially flat crystalline ribbons having controlled width.

Abstract: In a single crystal pulling apparatus for providing a Czochralski crystal growth process, the improvement of a shallow melt crucible (20) to eliminate the necessity supplying a large quantity of feed stock materials that had to be preloaded in a deep crucible to grow a large ingot, comprising a gas tight container a crucible with a deepened periphery (25) to prevent snapping of a shallow melt and reduce turbulent melt convection; source supply means for adding source material to the semiconductor melt; a double barrier (23) to minimize heat transfer between the deepened periphery (25) and the shallow melt in the growth compartment; offset holes (24) in the double barrier (23) to increase melt travel length between the deepened periphery (25) and the shallow growth compartment; and the interface heater/heat sink (22) to control the interface shape and crystal growth rate.

Abstract: A single crystal pulling device is composed of a cylindrical pulling furnace, a crucible disposed in the pulling furnace in which a single crystal material for a semiconductor is poured, a cylindrical vacuum vessel coaxially disposed around the pulling furnace, and a superconducting magnet composed of a plurality pairs of coils arranged inside the vacuum vessel so as to generate magnetic field. The superconducting coils are arranged on the same horizontal plane of the cylindrical vacuum vessel, and each of the paired superconducting coils includes coils set so as to oppose to each other with respect to a central axis of the cylindrical vacuum vessel so that one coil of one pair of coils and one coil of another pair of coils adjacent to that one pair of coils constitutes a set angle, directing towards the inside of the cylindrical vessel, in a range of 100° to 130°.

Abstract: A silica glass crucible is produced by a) providing a porous amorphous silica glass green body, which is infiltrated with at least one substance that promotes crystallization of a silica glass crucible, b) drying the infiltrated silica glass green body, c) filling the green body with a metal or semimetal, and d) heating the filled green body for a period of from 1 h to 1000 h to a temperature of from 900 to 2000° C. to form at least a portion of silica crystalline phase. The process may be continued by further heating to melt the metal or semimetal and pulling a single crystal from the melt.

Abstract: An object of the invention is to provide a quartz glass crucible for pulling up silicon single crystal and a method for producing the same, suitable for improving the productivity of the crucible and the quality of the silicon single crystal, which, by forming a crystalline layer on the inner surface of the quartz glass crucible during pulling up silicon single crystal, prevents degradation from occurring on the inner surface of the crucible and increases the ratio of single crystal while preventing the dislocation from forming on the single crystals.

Abstract: A silicon single crystal growing apparatus supplemented with a low melting point dopant feeding instrument and a low melting point dopant feeding method thereof for producing a heavily doped silicon single crystal with a dopant of low melting point. The apparatus includes a quartz crucible containing molten silicon liquid, a heating unit supplying the quartz crucible with a radiant heat, a crystal pulling lifter pulling up a silicon single crystal from a molten silicon liquid contained in the quartz crucible, and a low melting point dopant feeding instrument. The low melting point dopant feeding instrument includes a sidewall portion, an upper portion, and an open bottom portion with net-like structure having many holes, the sidewall and upper portions being vacuum-tight sealed.

Abstract: In a method for growing a single crystal by bringing a seed crystal (4) into contact with a melt (2) of raw materials melted under heating in a crucible (1) a blade member (5) or a baffle member in disposed in the raw material melt (2) in the crucible (1) and a single crystal is grown by pulling up it with rotating the crucible (1) to thereby grow various single crystals including CLBO from the highly viscous raw material melt (2) as high quality and high performance crystals.

Abstract: Methods and apparatus for concurrent growth of multiple crystalline ribbons from a single crucible employ meniscus shapers to facilitate continuous growth of discrete and substantially flat crystalline ribbons having controlled width.

Abstract: Provided are a quartz glass crucible for pulling up a silicon single crystal, with which not only a defectless silicon single crystal can be pulled but a single crystallization ratio can greatly be improved and a production method therefor. The quartz glass crucible comprises a crucible body constituted of a semi-transparent quartz glass layer and a transparent quartz glass layer formed on the inner wall surface of the crucible bass body and no expanded bubbles equal to ro more than 0.5 mm in diameter are present in a layer 1 mm in depth from an inner surface of the quartz glass crucible after the silicon single crystal is pulled up using the quartz glass crucible.

Abstract: In one aspect of the invention, a method for pressurized annealing of lithium niobate or lithium tantalate structures, such as optical modulators and optical wave guides, comprises pressurizing an oxygen atmosphere containing a lithium niobate or lithium tantalate structure above normal atmospheric pressure, heating the structure to a temperature ranging from about 150 degrees Celsius to about 1000 degrees Celsius, maintaining pressure and temperature to effect ion exchange or to relieve stress, and cooling the structure to an ambient temperature at an appropriate ramp down rate.

Abstract: A crucible used in the growth of polycrystal silicon by a cast method comprises a crucible body for, when solid material silicon is melted, containing the melted material silicon, and a material holder provided on the crucible body, for holding further material silicon on the material silicon loaded into the crucible body.